DE4213251A1 - Semiconductor chip with insulating frame - including heat sink and conductive structure - Google Patents

Abstract

A novel semiconductor chip has (i) an insulating frame (10) with a top face recess (11) and a window opening (12) which extends vertically through the lower part of the frame into the recess; (ii) a metal or alloy heat sink (20) inserted in the window opening and attached to the frame; (iii) a conductive structure (13,14,15) which extends from the frame bottom face to a predetermined region on either the frame upper face or the bottom face of the recess; (iv) a semiconductor device (30) attached to the upper face of the heat sink; and (v) conductive wiring (40) bonded, at one end to the device (30) and, at the other end, to the conductive structure at the predetermined region. ADVANTAGE - Heat is rapidly conducted away so that the chip may have a high power semiconductor device. The device and its wiring are well protected and the chip is simple to mfr.

Description

The invention relates to a semiconductor device and a process for its manufacture. In particular be the invention relates to an improvement in heat conductivity of a semiconductor element.

The invention also relates to a container for a To encase or encase semiconductor element.

As is well known in the art, in most cases, a semiconductor element on a PCB mounted. If a semiconductor element is extreme is small, so its handling is accurate and sensitive treatment required. Furthermore often becomes a semiconductor element of an enormous voltage and / or exposed to stress during assembly where through the properties and characteristics of the semiconductor element deteriorate and in the worst case half conductor element is destroyed.

Among techniques that have been proposed to do this, a To overcome assembly-related difficulties one, according to which a semiconductor element in a container of about 1: 1 cm encapsulated and the entire container is assembled.

With regard to the prior art, the attached FIG. 1 shows a vertical section of a semiconductor module in which a container is used. A semiconductor element 8 is encased in this module SD by a container SC, which comprises a ceramic frame 1 , which has a step or a shoulder 2 in a central part of its upper surface in order to encase the semiconductor element 8 . Wire conductors 4 penetrate the ceramic frame 1 on each of two opposite sides. The two mutually opposite sides of the ceramic frame 1 are further equipped on their upper surfaces with an electrode 5 which is connected to the wire conductor 4 . In addition, the 6 for input and output of a signal are present on the opposite side parts of the ceramic frame 1 at their lower surfaces Elektro. Like the electrodes 5 , the electrodes 6 are connected to the wire conductor 4 .

A chip bonding island 7 made of nickel-plated copper is attached to the bottom surface of paragraph 2 . The semiconductor element 8 is mounted on the bond island 7 with the aid of a chip binder 3 , such as a solder. On the semiconductor element 8 , electrode areas are formed, each of which is connected to the electrical 5 of the ceramic frame 1 by metallic thin wires 9 .

The electrodes 6 are soldered to a circuit board with a circuit diagram and the semiconductor component SD, which has been described above, is firmly attached to the circuit board. Since the semiconductor element 8 is completely enclosed by the insulating ceramic frame 1 , the semiconductor element 8 short-circuits with other elements present on the circuit board only by the electrodes 6 .

However, there is a problem with the conventional semiconductor device SD. Due to the low conductivity of the ceramic frame 1 is difficult or hardly dissipated by the semiconductor element 8, which is mounted on the ceramic frame 1 via the bonding island 7 generated heat to the ceramic frame. 1 Rather, the heat will dissipate into the air or otherwise pass into the ceramic frame 1 and through the thin metallic wires 9 into the circuit board.

Thus, only a limited, small amount of heat is dissipated from the semiconductor element 8 . Accordingly, in the conventional semiconductor device SD, a semiconductor element with a large electric power that generates a large amount of heat cannot be used.

It is therefore a primary object of the invention to provide one To provide semiconductor device, of which Heat can be dissipated quickly and which consequently also with a high performance semiconductor element can be provided.

Another object of the invention is to see one Semiconductor device by means of a simple manufacturing process to be able to manufacture.

In addition, the invention aims to be a semi-lead terelement and conductive, incorporate in the semiconductor device to protect drawn wires in an improved manner.

Another object of the invention is to provide a container for Sheathing or sheathing the semiconductor element fen.

In addition, it is the object of the invention to manufacture Specification method for a semiconductor device.

According to the invention, a semiconductor component (a) comprises one insulating frame with a recess or recess on an upper part of this frame, with a vertical Window opening that is open in the recess, a un penetrates teres part of the insulating frame, (b) one Thermal conduction block, which is inserted into the recess, on the isolie fixed frame and essentially made of little is made of at least one metal or alloy,  (c) a conductive structure that differs from a predetermined th area that is on either an upper surface of the iso lating frame or a bottom surface of the recess is intended to a bottom surface of the insulating frame extends, (d) an on an upper surface of the thermal conductor block-mounted semiconductor element, and (e) an electrical conductive wire, the semiconductor element and the conductive capable structure connects and a first tail as well as a has second end piece, the first end piece with the semiconductor element and the second end piece with the conductive capable structure at the predetermined area that is.

According to the invention, it is thus in the semiconductor element generated heat in a downward direction by the heat lead block removed. In this respect, a semiconductor element high power element in the semiconductor device turn come.

The conductive structure preferably comprises a first, conductive attached to the predetermined area ges element, a second, isolate on the bottom surface of the conductive element attached to the frame and a third with the predetermined area and the second conductive element connected conductive element. A Bottom surface of the heat-conducting block is essentially with a bottom surface of the second conductive element dig.

If the semiconductor device on a printed circuit board te is installed, the heat dissipation capacity is increased. This is a result of the arrangement of the thermal block art that its bottom surface is flush with the bottom surface of the is conductive structure that on the bottom surface of the isolie frame.  

The insulating frame can be made by assembling two frames pieces are formed. In this case it is safe a wide space for connecting the semiconductor element and the conductive structure with the conductive wires ten because the wiring before assembling the first and second insulating frame or frame piece is posed. In this way, the manufacture of the half ladder module very simplified.

The semiconductor device can also contain a resin layer filled in the stepped window is what the semiconductor element and the conductive wires packaged or encapsulated from the resin layer be closed to the top surface of the semiconductor element elements and to protect the conductive wires.

According to the invention, containers are also created which serve to get semiconductor devices, and who the process for the production of the blocks specified.

The task and the goals as well as the characteristics and advantages The invention will become apparent from the following to the drawings Reference description of preferred embodiments men of the subject of the invention clearly. Show it:

Figure 1 shows a cross section of a conventional semiconductor device.

Fig. 2 is a perspective view of a semiconductor device in a first embodiment of the invention;

Fig. 3 is a vertical sectional view of the semiconductor package of the first embodiment;

Fig. 4 is a frame used in the device of the first embodiment is a vertical section;

Fig. 5 is a perspective view of a meableitblocks Were used in the block of the first embodiment;

Fig. 6 is a vertical section of the semiconductor device of the first embodiment, which is mounted on a circuit board;

Fig. 7 is a vertical sectional view for explaining a position Her method of the semiconductor device of the first embodiment;

8 is a perspective view for explaining the manufacturing process of the device of the first embodiment.

FIGS. 9 and 10 further vertical sectional views explaining the manufacturing process of the device of the first embodiment;

Figure 11 is a vertical sectional view of a semiconductor device in a second embodiment of the invention.

Fig. 12 is a vertical section for explaining a manufacturing process of the device of the second embodiment;

Fig. 13 is a vertical section of a semiconductor device in a third embodiment of the invention;

FIG. 14 is a heat extractor used in the module of the third embodiment, a perspective view;

FIG. 15 is a perspective view of a semiconductor device in a fourth embodiment according to the invention;

FIG. 16 is an essentially schematic, auseinandergezo gene sectional view of the semiconductor package of the fourth embodiment;

Fig. 17 is a vertical cross section of a semiconductor assembly block in a fifth embodiment according to the invention;

Fig. 18 is a vertical cross section of a frame used in the construction stone of the fifth embodiment;

Fig. 19 to 22 are sectional views for vertical He purification of a manufacturing method of the semiconductor device of the fifth embodiment;

Fig. 23 is a vertical cross section of a semiconductor device in a sixth embodiment according to the invention.

Semiconductor device of the first embodiment

Reference is first made to Figs. 2-5. The semiconductor device SD 1 shown in these comprises a container SC 1 which encloses a semiconductor element 30 and is formed from a frame 10 which is made of ceramic material and has associated components.

The frame 10 comprises, in an upper surface thereof, a step or a step 11 in which (in which) a semiconductor element is to be encased. The heel has a right-angled block window or hole 12 that opens in the heel 11 and extends from its bottom surface to the bottom surface (bottom surface) of the frame 10 . Furthermore, the frame 10 contains in each of two opposite side parts that surround the paragraph 11 , wire conductor passages 13 a, which extend from the upper surface to the lower surface of the frame 10 . In these wire conductor passages 13 a, wire conductors 13 are inserted which pass through the frame 10 in the vertical direction. In addition, the frame 10 is equipped on the upper surfaces of the two opposite side parts with first electrodes 14 which are connected to the upper ends of the wire conductors 13 . In a similar manner, input-output electrodes 15 are provided on the bottom surfaces of the two opposite side parts. These input-output electrodes (second electrodes) 15 are also connected to the wire conductors 13 at the lower end thereof. A signal to or from the semiconductor component SD 1 is input or output at the second electrodes 15 .

The first electrodes 14 , the input-output electrodes 15, and the wire conductors 13 are first to third conductive members that form the conductive structure that extends from the upper surface of the frame 10 to the lower surface thereof.

The heat dissipation block 20 to be inserted into the block window 12 is a cubic block made of a metal or an alloy. The heat dissipation block 20 can be a monoblock made of copper. Alternatively, this block 20 can be a composite block, which is formed by assembling a first block part 21 and a second block part 22 , as shown in FIG. 5. In the case of FIG. 5, the second block part, which consists of molybdenum, is soldered onto the surface of the first block part 21 , which is made of copper.

The area dimension of the heat dissipation block 20 is so determined that this block can be inserted into the block window 12 . The heat dissipation block 20 is inserted into this window and fastened to the frame 12 by means of an adhesive material such that the bottom surface (bottom surface) 20 a of the heat dissipation block is flush with the respectively assigned bottom surface 15 a of the input / output electrodes 15 .

The semiconductor element 30 is connected to the heat dissipation block 20 by a chip binder 31 , e.g. B. a solder, the verbun firmly. The semiconductor element 30 includes a switching element and has an electrode region (not shown) formed thereon. With the electrode areas of the semiconductor element 30 , the respective first ends of thin metallic wires 40 are connected, the second ends of which are connected to the electrodes 14 . In this way, the semiconductor element 30 and the electrodes 14 are electrically connected to one another by the metallic thin wires 40 .

Fig. 6 shows schematically the assembled on a printed circuit board 50 semiconductor device SD 1. The circuit board 50 comprises an insulating substrate 55 and a conductive circuit diagram 51 formed thereon, which is connected to other (not shown) switching elements on the circuit board 50 . Through the circuit diagram 51 , a signal is input or removed to or from the semiconductor component SD 1 . A bond island 53 is also formed on the insulating substrate 55 in order to attach the semiconductor component SD 1 to the printed circuit board 50 . The bond island 53 is conductive and rectangular and can also be formed with the conductive circuit diagram 51 . With the exception of the semiconductor module SD 1 , the bond island 53 is electrically isolated from the other switching elements.

The conductive circuit diagram 51 and the input-output electrode 15 are connected by a binder 52 . The Bondin sel 53 is attached to the lower surface of the heat dissipation block 20 by a binder 54 . Both binders 52 and 54 are, for example, a solder.

Through the binder 31 , the molybdenum block part 22 , the heat dissipation block 20 and the binder 54 , a thermally conductive channel is thus formed for the semiconductor component SD 1 , which extends from the lower surface of the semiconductor element 30 to the printed circuit board 50 and is highly conductive for heat is because the affected components of this channel are all made of a metal or an alloy. Due to the high conductivity in the semiconductor element 30 thus generated heat is quickly dissipated through the heat conductive channel is increased whereby the heat dissipation of the semiconductor element 30th In this respect, a semiconductor element of high power, which generates a large amount of heat, can also be used in the semiconductor module SD 1 .

As already mentioned, the bottom surface 20 a of the heat dissipation block 20 is flush with the bottom surface 15 a of the input-output electrode 15 . This enables the entire surface area of the bottom surface 20 a to touch the circuit board 50 when the semiconductor component SD 1 is mounted on this plate 50 . Thus, heat given off from the semiconductor element 30 to the heat-conducting block 20 is efficiently dissipated to the printed circuit board 50 . This advantageous construction or construction, wherein the bottom surfaces of the heat-conducting block and the input-output electrode are essentially flush with one another, is also used in the components according to the further preferred embodiments of the present invention, which will be discussed below.

The bond island 53 is electrically isolated from the conductive circuit diagram 51 for signal transmission and the other switching elements on the circuit board 50 , which is why the semi-conductor element 30 does not short circuit either with the circuit diagram 51 or with other switching elements.

It is also particularly noteworthy that the electrical connection between the semiconductor element 30 and the heat dissipation block 20 does not produce an adverse effect because the bottom surface of the semiconductor element 30 is grounded in most cases. Conversely, the electrical connection is particularly advantageous if the bond island 53 is grounded insofar as an earth channel is guaranteed by the heat dissipation block 20 .

Process for the manufacture of the semiconductor device first embodiment

The semiconductor device SD 1 is produced in the following manner. First, the frame 10 is formed of ceramic material as shown in FIG. 7. The material is formed into the frame 10 so that the heel 11 extends downward from the top surface of the frame and the right-angled block window 12 is open to the bottom of the heel 11 . Furthermore, the frame 10 also receives the wire conductor passages 13 a.

The wire conductor 13 shown in Fig. 8 are inserted into one of the passages 13 a, whereupon the plate-shaped electrodes 14 and 15 , both of which are made of a metal, are attached to the frame 10 on the side upper and side lower surfaces and with the Wire conductors 13 are the verbun. Up to this point, the production corresponds to the semiconductor module SD 1 , which is shown in FIG. 4, the wire conductors 13 , the first and second electrodes 14 , 15 forming a conductive conductor structure C (conductive structure) according to FIG. 8.

Subsequently, the heat dissipation block 20 prepared in advance is provided with an adhesive on the side walls and inserted into the block window 12 ( FIG. 9). When the adhesive is compacted or solidified, the heat dissipation block 20 is held firmly in the frame 10 . In this process, the heat extractor 20 is arranged so that its bottom or lower surface 20 a surface flush with the bottom 15 a of the plate electrode 15 is. The container SC 1 of FIG. 9 thus consists of the frame 10 , the conductive structure C and the heat dissipation block 20 .

In the next stage, the semiconductor element 30 is fixedly attached to the heat dissipation block 20 with the aid of the chip binder 31 , as shown in FIG. 10. By subsequently connecting the electrode areas of the semiconductor element 30 and the electrodes 14 by means of the thin metal wires 40 , the manufacture of the semiconductor device SD 1 from FIG. 3 is thus ended.

Semiconductor device of the second embodiment

Fig. 11 shows a vertical cross section of a semiconductor device SD 2 in a second embodiment according to the invention, which comprises a container SC 2 with a Kera microframe 60 . The shape of the frame 60 is identical to that of the frame 10 of FIG. 3, that is, a shoulder 61 to enclose a semiconductor element is formed in the middle part of the frame 60 and in the bottom of the paragraph 61 there is an opening Block window 62 .

The electrodes associated with the frame 60 are the electrodes 64 and 65 . The electrode 65 to be attached to the lower surface of the frame 60 is designed like the electrode 14 of FIG. 3. The electrode 64 , which is to be attached to the upper surface of the frame 60 , has a double fold or angled shape, so that this electrode 64 is adapted to a step-like configuration, which che by an upper surface 60 a of the frame 60 and one inner step surface 61 a of the block window 62 is caused.

Within a part 64 a, the electrode 64 is connected to a wire conductor 63 , this part 64 a being arranged on the upper surface 60 a of the frame 60 . The electrode 64 is also connected at its part 64 b via a metallic thin wire 90 to an electrode area of a semiconductor element 80 , this part 64 b resting on the inner step surface 61 a of the block window 62 .

In the block window 62 , a heat-conducting block 70 is inserted, which is firmly connected to the frame 60 . The heat-conducting block 70 is made of the same material as the block 20 of the first embodiment. One difference between these two heat-conducting blocks is that block 70 is thinner than block 20 . In other words, if the heat-conducting block 70 is attached to the block window 62 so that its bottom or bottom surface 70 a is flush with the bottom or bottom surface 65 a of the electrode 65 , the upper surface 70 b of the heat-conducting block is deeper lies as the inner step surface 61 a.

The shoulder 61 is filled with a potting compound 105 , and silicone or epoxy resins can be used for this. As a result, the semiconductor element 80 , the metallic thin wires 90 and the part 64 b of the electrode 64 are enclosed in a capsule formed by the sealing compound 105 (resin layer).

With the exception of the structural details explained above, the semiconductor device SD 2 corresponds to the semiconductor device SD 1 .

An advantage of the block SD 2 is in the increased heat discharge capacity of the semiconductor element 80 can be seen which is due to represent that this semiconductor element 80 is mounted on the heat extractor 70th

Another advantage of the semiconductor device SD 2 is that the metallic thin wires 90 and the semiconductor element 80 are adequately protected. This protection is made possible by paragraph 61 , in which chem the thin wires 90 are enclosed in the filling with sealing compound 105 , so that the metallic thin wires 90 and the semiconductor element 80 are enclosed in a package or encapsulation formed by the sealing compound 105 .

Method of manufacturing the semiconductor device the second embodiment

The semiconductor device SD 2 is formed in a similar manner to the semiconductor device SD 1 to the point shown in FIG. 12, wherein the application of the heat-conducting block 70 to the block window 62 is completed. Dar is on the semiconductor element cemented to the heat extractor 70 80, and the electrode portions of the semiconductor elements 80 and the electrodes 64 are connected to each other by the metal thin wires union 90th

Then the heel 61 is filled with the casting compound 105 , which is followed by curing of this compound 105 by heat. This completes the manufacture of the semiconductor module SD 2 .

Semiconductor device of the third embodiment and its manufacturing process

FIG. 13 shows a cross section of a semiconductor block SD 3 in a third embodiment according to the invention, while FIG. 14 is a perspective view of a heat dissipation block 120 used in the block SD 3 . As can be seen 13 and 14 in Figs., Have two Einan the opposite side walls of the Wärmeleitblocks 120 each projecting ribs 120 a which are formed monolithically with the block 120. For a precise grip with the ribs 120 a 110 grooves 112 a are worked out in an inner wall of a block window 112 of the frame.

Otherwise, the semiconductor device SD 3 corresponds to the semiconductor device SD 1 .

Among the particularly noteworthy advantages of the semiconductor component SD 3 is the one that can be attributed to the close engagement of the heat-conducting block 120 with the frame 110 . In the SD 3 block, the heat-conducting block 120 is attached to the frame 110 by a precise engagement of the ribs 120 a with the grooves 112 a. Because of the close engagement between the ribs and grooves, no gap and hardly any separation between the heat-conducting block 120 and the frame 110 is produced.

In the following the manufacturing process of the semiconductor device SD 3 is explained.

First, ceramic material around the heat-conducting block 120 , which has the protruding ribs 120 a, is attached to the two opposite side walls and heated to obtain a frame-like sintered part. In the monoblock sintered part obtained in this way, the heat-conducting block is located in the bottom area of the shoulder 111 of the frame 110 . In the frame 110 wire conductor passages 113 a are designed such that the opposite top and bottom surface areas of the frame 110 in the two side parts of the frame are penetrated by the passages 113 a.

After the insertion of the wire conductor 113 into the respective vertical passages 113 a, the electrodes 114 and 115 are so firmly attached to the upper and lower surface of the frame 110 that the wire conductor 113 with its upper and lower ends, a conductive connection with the electrical received the 114 and 115 respectively. As previously mentioned, the electrodes 115 are provided for input and output of a signal.

Following this, a semiconductor element 113 is cemented to the heat conducting block 120 within the stepped portion (ABSat ZES) 111th In a last step, electrode regions of the semiconductor element 130 and the electrodes 114 are connected by thin metallic wires 140 .

Semiconductor device of the fourth embodiment and its manufacturing process

A semiconductor component SD 4 in a fourth embodiment according to the invention is shown in FIG. 15 in a perspective and in FIG. 16 in an essentially schematic, exploded sectional view. Differences between the semiconductor device SD 4 of the fourth embodiment and the semiconductor device SD 3 of the third embodiment exist in the following points.

On the one hand, the frames are different in that the frame 110 of the SD 3 module is made of a ceramic material, while the frame 160 of the SD 4 module is made of a resin, such as epoxy resins or glass epoxy resins. On the other hand, the structural designs of the frames are different in that the frame 160 is formed from a pair of frame pieces 160 a. Otherwise, the semiconductor modules SD 4 and SD 3 are identical to one another.

As mentioned, the frame 160 is made of resin and, as such, cannot be integrally connected to a heat-conducting block 170 by sintering. Nevertheless, a container ter SC 4 , which is similar to the container SC 3 , can be obtained according to the fourth embodiment according to the invention, and this is one of the advantages of the semiconductor device SD 4 .

Before this module SD 4 is manufactured, the two frame pieces 160 a are manufactured in advance. The configuration of the frame pieces 160 a must be such that the a frame 160 generated by these same frame pieces 160 Ausgestal processing as the frame 110 of Fig. 13 has.

First, the wire conductors 163 are inserted into their passages 163 a, which are provided in each frame piece 160 a, and then connected to the electrodes 164 and the electrodes 165 for input and output of a signal.

Then a heat dissipation block 170 and the frame pieces 160 a are bonded together. The heat dissipation block 170 is configured in the same way as the block 120 in FIG. 14, ie the dissipation block 170 also has ribs 170 a which come into engagement with slots 166 in the frame pieces 160 a. In a first step of adhesive bonding, adhesive is applied to the frame pieces 160 a on the facing end walls. Then the heat-conducting block 170 is sandwiched between the frame pieces 160 a in such a way that the ribs 170 a engage in the grooves 166 . By compressing or solidifying the adhesive, the two frame pieces 160 a are combined to form frame 160 . Here, the frame 160 and the heat conduction block 170 are formed as a one-piece unit, so that the container SC 4 is obtained.

Subsequently, a semiconductor element 180 is cemented to the heat-conducting block 170 within a shoulder 161 . Finally, electrode regions of the semiconductor element 180 and the electrodes 164 are connected by thin metallic wires 190 , which completes the manufacture of the semiconductor module SD 4 .

Semiconductor device of the fifth embodiment

In the semiconductor device SD 5 of the fifth embodiment shown in cross section in FIG. 17, the frame 210 consists of two frame pieces 210 a and 210 b.

As shown in Fig. 17 and 18, there is a first Rah menstück 210 a of a rectangular ring-like member of an insulating material such as epoxy or glass epoxy resins, and it includes a rectangular (first) Blockfen edge 212, the central in its part is open. Two opposite side parts of the first frame piece 210 a contain wire conductor passages 213 a, in each of which wire conductors 213 (third conductive element) are inserted.

The first frame piece 210 a is further equipped in the two opposite side parts with electrodes (first conductive element) 214 and electrodes (second conductive element) 215 for input and output of a signal, each of which is connected to the wire conductors 213 . The electrodes 214 are attached to the upper surface of the two opposite side parts of the first frame piece 210 a, while the electrodes 215 are held on the lower surfaces of these side parts, with the electrodes 214 to the edge or to the edge of the block window 212 in a horizontal manner Extend direction.

The electrodes 214 and 215 and the wire conductor 213 serve as first to third conductive elements of the conductive structure that connects the upper and lower surfaces of the first frame piece 210 a.

A heat-conducting block 220 is fitted into the block window 212 of the first frame piece 210 a and held therein by an adhesive. The heat-conducting block 220 has the same configuration and is made of the same material as the heat-conducting block 70 of the embodiment from FIG. 11.

A semiconductor element 230 is held on the heat-conducting block 220 by a chip binder 231 . The upper surface of the semiconductor element 230 (ie the surface 230 a) is substantially flush with the upper surface of the first frame.

The semiconductor element 230 is provided with electrode regions, which are connected by thin metallic wires 240 to the electrode 214 in a part close to the edge of the block window 212 .

A second frame piece 210 b is glued onto the upper surface of the first frame piece 210 a. This second frame piece 210 b consists of the same material as the frame piece 210 a and has a rectangular, ring-like circumferential shape. The area dimension of the window opening in the second frame piece 210 b, which has a second window 211 , is larger than the window opening 212 in the first frame piece 210 a. As a result, the electrode 214 held on the first frame piece 210 a is partially clamped between the two frame pieces 210 a and 210 b. By assembling the two frame pieces 210 a and 210 b, the frame 210 is formed, the inner walls of which produce a step 210 s.

The interior of the paragraph 210 s is filled with a sealing compound 255 , so that the semiconductor element 230 and the thin metallic wires 240 are enclosed in a material or encapsulation formed by the sealing material 255 . Silicone or epoxy resins can be used as the potting compound 255 .

The first frame piece 210 a, the second frame piece 210 b, the wire conductor 213 , the electrodes 214 , the electrodes 215 for input and output of a signal and the heat-conducting block 220 thus form a container SC 5 .

The structural configurations of the semiconductor component SD 5 and the component SD 2 of FIG. 11 are identical to one another, which of course also applies to the advantages of the two semiconductor components. As an additional advantage for the semiconductor module SD 5 , however, it should be emphasized that its manufacture is simple, which will be discussed in more detail below.

Method of manufacturing the semiconductor device the fifth embodiment

The first step in the production of the semiconductor component SD 5 consists in attaching the electrodes 214 and 215 and the wire conductor 213 to the first frame piece 210 a ( FIG. 18).

In the next step, the heat-conducting block 220 is fitted into the block window 212 of the first frame piece 210 a.

Be Then, the semiconductor element 230 is attached adhesively by the binder 231 at the heat conducting block 220 (Fig. 20), whereupon the electrode portions of the semiconductor element 230 and the electrodes 214 by the metal thin wires 240 (Fig. 21).

Then the second frame piece 210 b is connected to the first frame piece 210 a by an adhesive, as shown in FIG. 22. As a result, the step 210 s is formed, which encloses the thin wires 240 and the semiconductor element 230 .

S filled by executing a step in which the shoulder 210 with the sealing compound 255, and this mass 255 it warms and is compressed, the manufacture of the semiconductor device SD 5 is terminated.

Compared to the first to fourth preferred embodiments, all of which require the manufacture of a monolithic frame with a shoulder in its central part, which is time-consuming and laborious when a resin frame is to be manufactured, the manufacturing method for the fifth semiconductor device is SD 5 according to the fifth embodiment, simpler. Here, the frame 210 , which comprises a step or a step, is produced by assembling the first and second rectangular frame pieces 210 a and 210 b, which themselves have no step. Relieving the need for a monolithic frame is therefore of considerable advantage.

The manufacturing method of the fifth embodiment is further advantageous because the wiring of the thin metallic wires 240 is finished before the second frame piece 210 b is attached and the inner walls of which surround the semiconductor element 230 . Therefore, the Ver wirten in a wide, free space is made without there being a spatial limitation by the second frame part 210 b. This is a considerable advantage over the production of the semiconductor module SD 2 ( FIG. 11), the wiring of the metallic thin wires 90 being carried out in a narrow, limited space within the shoulder 61 which surrounds the semiconductor element.

Semiconductor device of the sixth embodiment and its manufacturing process

In the semiconductor cross section SD 6 shown in vertical cross section in FIG. 23 in the sixth embodiment according to the invention, electrodes 263 are formed by three one-piece electrode elements 263 a, 263 b and 263 c, which are held on the first frame piece 260 a. The first electrode element 263 a is located on an upper surface, the second electrode member 263 b is located on an outer Be tenfläche 260 s, and the third electrode member 263 c be found at the bottom or lower surface of the first Rah menstücks 260 a.

A container SC 6 is formed by the first frame piece 260 a, a second frame piece 210 b, a heat-conducting block 220 and the electrode 263 .

In the semiconductor device SD 6 , a semiconductor element 230 and a circuit board (not shown) are electrically connected by the electrode 263 . In this respect, the first frame piece 260 a does not need to have wire conductor passages for such wire conductors, which is a further advantage in addition to the parts of the semiconductor devices of the previous embodiments.

The structural configurations of the semiconductor module SD 6 are, with the exception of the above, the same as those of the module SD 5 , so that a further explanation, since the same reference numerals are used, can be omitted. The manufacturing process of the SD 6 chip corresponds to that of the SD 5 semiconductor chip.

The difference to the manufacturing process of the module SD 5 ( Fig. 17) is only that in the module SD 6 the first frame piece 210 a is replaced or modified by the first frame piece 260 a and instead of the electrodes 214 , 215 and the wire conductor 213 the Kick electrodes 263 .

Variations

Although it was described above that the frames are made of a ceramic or resin material can be made various other materials that electrically isolate come into use.  

The heat-conducting blocks in the embodiments according to the present invention are usually made from one Made of metal or an alloy. A stratification form of metal / alloy is also for thermal conductivity blocks to consider.

In principle, the invention turns a semiconductor module in which an insulating frame has a recess or has a paragraph and a window opening. On off a metal-made thermal block is in the fen insert opening and attached to the frame. On the A semiconductor element is firmly attached to the heat-conducting block. Heat generated in the semiconductor element is above the heat lead block to a printed circuit board. The thermal conductivity of the thermal block is great, so that the heat dissipation of the semiconductor device be is favored and increased.

Although the invention is verbatim and pictorial in detail explained with reference to some embodiments was, so is the description in all its respects to be regarded only as exemplary and not restrictive. It goes without saying that those skilled in the art will know Modifications to the teaching imparted by the invention and changes are suggested, however, the framework not leave the invention.

Claims (11)

1. Semiconductor device, characterized by

• a) an insulating frame ( 10 , 60 , 110 , 160 , 210 , 210 b, 260 ) with a recess ( 11 , 61 , 111 , 161 , 210 s) on an upper part of this frame, with a vertical window opening ( 12 , 62 , 112 , 212 ), which is open in the recess, penetrates a lower part of the insulating frame,
• b) a heat-conducting block ( 20 , 70 , 120 , 170 , 220 ) which is inserted into the window opening, fastened to the insulating frame and essentially made of at least one metal or an alloy,
• c) a conductive structure ( 13 , 14 , 15 , 63 , 64 , 65 , 113 , 114 , 115 , 163 , 164 , 165 , 213 , 214 , 215 , C) extending from a predetermined area on either an upper surface of the insulating frame or a lower surface of the recess extends to a bottom surface of the insulating frame,
• d) a semiconductor element ( 30 , 80 , 130 , 180 , 230 ) fixed to an upper surface of the heat-conducting block and
• e) an electrically conductive wire ( 40 , 90 , 140 , 190 , 240 ) that connects the semiconductor element and the conductive structure and has a first end piece and a second end piece, the first end piece with the semiconductor element and the second end piece with the conductive structure is richly connected to the predetermined area.

2. The semiconductor device of claim 1, wherein the conductive structure comprises:

• d-1) a first conductive element ( 14 , 64 , 114 , 164 , 214 , 263 a) attached to the predetermined surface area,
• d-2) a second conductive element ( 15 , 65 , 115 , 165 , 215 , 263 c) attached to the bottom surface of the insulating frame and
• d-3) a third conductive element ( 13 , 63 , 113 , 163 , 213 , 263 b) connected to the predetermined area and the second conductive element,
  wherein a bottom surface ( 20 a, 70 a) of the heat-conducting block ( 20 , 70 ) is essentially flush with a bottom surface ( 15 a, 65 a) of the second conductive element.

3. Semiconductor device, characterized by

• a) an insulating frame ( 210 ) comprising:
  • a-1) a first insulating frame ( 210 a, 260 a) with a vertical first window opening ( 212 ) and
  • a-2) a second insulating frame ( 210 b) which is provided on the first insulating frame and has a second vertical window opening ( 211 ) which is aligned with the first vertical window opening of the first insulating frame, the second vertical Window opening has a diameter which is larger than that of the first vertical window opening, and a stepped window opening is formed by a combination of the first and second vertical window opening,
• b) a heat-conducting block ( 220 ) which is formed from at least one metal and an alloy and is inserted into the first window opening and fastened to the first insulating frame,
• c) a semiconductor element ( 230 ) attached to an upper surface of the heat-conducting block,
• d) a conductive structure comprising:
  • d-1) a first conductive member ( 214 , 263 a) attached to an upper surface of the first insulating frame,
  • d-2) a second conductive member ( 215 , 263 c) attached to a lower surface of the first insulating frame, and
  • d-3) a third conductive element ( 213 , 263 b) connecting the first conductive element to the second conductive element, and
• e) a conductive wire ( 240 ) which connects the semiconductor element and the conductive structure and has a first end piece and a second end piece, the first end piece being connected to the semiconductor element and the second end piece being connected to the first conductive element.

4. The semiconductor device of claim 3, further comprising:

• e) a resin layer ( 255 ) filled in the stepped window opening, which forms an encapsulation enclosing the semiconductor element ( 230 ) and the conductive wire ( 240 ).

5. Container for wrapping a semiconductor element to be fastened to a printed circuit board, characterized by

• a) an insulating frame ( 10 , 60 , 110 , 160 , 210 , 210 b, 260 ) with a recess ( 11 , 61 , 111 , 161 , 210 s) on an upper part of this frame, with a verti cal window opening ( 12 , 62 , 112 , 212 ), which is open in the recess, penetrates a lower part of the insulating frame,
• b) a heat-conducting block ( 20 , 70 , 120 , 170 , 220 ) which is inserted into the window opening, fastened to the insulating frame and essentially made of at least one metal and an alloy, and
• c) a conductive structure ( 13 , 14 , 15 , 63 , 64 , 65 , 113 , 114 , 115 , 163 , 164 , 165 , 213 , 214 , 215 , C) extending from a predetermined area on either an upper surface of the insulating frame or a lower surface of the recess extends to a bottom surface of the insulating frame.

6. The container of claim 5, wherein the conductive structure comprises:

• d-1) a first conductive element ( 14 , 64 , 114 , 164 , 214 , 263 a) attached to the predetermined surface area
• d-2) a second conductive element ( 15 , 65 , 115 , 165 , 215 , 263 c) attached to the bottom surface of the insulating frame and
• d-3) a third conductive element ( 13 , 63 , 113 , 163 , 213 , 263 b) which connects the first conductive element to the second conductive element,
  wherein a bottom surface ( 20 a, 70 a) of the heat-conducting block ( 20 , 70 ) is essentially flush with a bottom surface ( 15 a, 65 a) of the second conductive element.

7. container (SC 1 -SC 6 ) for wrapping a semiconductor element, which is to be attached to a printed circuit board, characterized by

• a) an insulating frame ( 210 ) comprising:
  • a-1) a first insulating frame ( 210 a, 260 a) with a vertical first window opening ( 212 ) and
  • a-2) a second insulating frame ( 210 b) which is provided on the first insulating frame and has a second vertical window opening ( 211 ) which is aligned with the first vertical window opening of the first insulating frame, the second vertical Window opening has a diameter which is larger than that of the first vertical window opening, and a stepped window opening is formed by a combination of the first and second vertical window opening,
• b) a heat-conducting block ( 220 ) which is formed from at least one metal and an alloy and is inserted into the first window opening and fastened to the first insulating frame, and
• c) a conductive structure comprising:
  • c-1) a first conductive element ( 214 , 263 a) attached to an upper surface of the first insulating frame,
  • c-2) a second conductive member ( 215 , 263 c) attached to a lower surface of the first insulating frame, and
  • c-3) a third conductive element ( 213 , 263 b) which connects the first conductive element to the second conductive element.

8. A method of manufacturing a semiconductor device comprising the steps of:

• a) making an insulating frame with a recess on an upper part of this frame, a vertical window opening, which is open in the recess, passing through a lower part of the insulating frame,
• b) attaching a conductive structure to the insulating frame, said conductive structure extending from a predetermined area defined on either an upper surface of the insulating frame or a bottom surface of the recess to a bottom surface of the insulating frame
• c) inserting a heat-conducting block into the window opening and attaching this heat-conducting block to the window opening, the heat-conducting block being made of at least one metal or an alloy,
• d) attaching a semiconductor element to an upper surface of the heat-conducting block and
• e) connecting the semiconductor element and the predetermined area by a conductive wire to electrically connect the semiconductor element and the conductive structure.

9. A method of manufacturing a semiconductor device comprising the steps of:

• a) Manufacture of a structure with an insulating frame and a heat-conducting block, the insulating frame having a recess in an upper part of this frame, a vertical window opening which is open in the recess and which is formed from at least one through a lower part of the insulating frame Metal and an alloy-made thermal conduction block inserted into the window opening and attached to it,
• b) attaching a conductive structure to the insulating frame, said conductive structure extending from a predetermined area defined on either an upper surface of the insulating frame or a bottom surface of the depression to a bottom surface of the insulating frame,
• c) inserting a heat-conducting block, which is made of at least one metal or an alloy, into the window opening and fastening the heat-conducting block in the latter,
• d) mounting a semiconductor element on an upper surface of the heat-conducting block and
• e) connecting the semiconductor element to the predetermined area by a conductive wire to electrically connect the semiconductor element and the conductive structure.

10. A method of manufacturing a semiconductor device comprising the steps of:

• a) producing an insulating frame with a vertical first window opening and a second insulating frame with a second vertical window opening, the window opening of the second vertical frame having a diameter which is larger than that of the first vertical window opening,
• b) attaching a conductive structure to the first insulating frame, said conductive structure comprising a first conductive element which is fixed to an upper surface of the first insulating frame, a second conductive element which is fixed to a bottom surface of the first insulating frame, and a third conductive element that connects the first conductive element to the second conductive element,
• c) inserting a heat-conducting block, which is formed at least from either a metal or an alloy, into the first window opening and fastening this heat-conducting block to the first insulating frame,
• d) attaching a semiconductor element to an upper surface of the heat-conducting block,
• e) electrically connecting the semiconductor element and the conductive structure by means of a conductive wire which is arranged between the semiconductor element and the first conductive element, and
• f) attaching the second insulating frame to an upper surface of the first insulating frame to form a composite frame such that the first and second window openings form a stepped window opening.

11. The method according to claim 10, characterized by the further step:

• g) filling the interior of the assembled frame with a resin and curing this resin.