JPH04179242A - Sealing method for semiconductor element - Google Patents
Sealing method for semiconductor elementInfo
- Publication number
- JPH04179242A JPH04179242A JP30752990A JP30752990A JPH04179242A JP H04179242 A JPH04179242 A JP H04179242A JP 30752990 A JP30752990 A JP 30752990A JP 30752990 A JP30752990 A JP 30752990A JP H04179242 A JPH04179242 A JP H04179242A
- Authority
- JP
- Japan
- Prior art keywords
- sealing
- mold
- resin
- semiconductor element
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007789 sealing Methods 0.000 title claims abstract description 67
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000011347 resin Substances 0.000 claims abstract description 75
- 229920005989 resin Polymers 0.000 claims abstract description 75
- 238000010438 heat treatment Methods 0.000 abstract description 7
- 238000000465 moulding Methods 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract 6
- 230000000694 effects Effects 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 4
- 239000002689 soil Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体素子(トランジスタ、IC1LSI等
)の封止方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for sealing semiconductor elements (transistors, IC1LSIs, etc.).
従来の技術
従来は、封止成形用金型のキャビティ内に、半導体素子
が装着されたリードフレームを配置し、前記封止成形用
金型内に設けられたポット内へ予備加熱した封止用樹脂
を投入後、前記ポット内に摺動可能に嵌合するプランジ
ャーを押動させて、加熱溶融された樹脂をランナ・ゲー
トを通して前記キャビティ内に加圧注入するトランスフ
ァーモールド対土方法によって半導体素子の樹脂封止成
形が行われている。Conventional technology Conventionally, a lead frame with a semiconductor element mounted thereon is placed in a cavity of a mold for sealing, and a pot provided in the mold is preheated for sealing. After charging the resin, a plunger that is slidably fitted into the pot is pushed to inject the heated and melted resin into the cavity through a runner gate under pressure. Resin encapsulation molding is being carried out.
発明が解決しようとする課題
ところが、上記の方法においては、以下に示すような問
題点があった。Problems to be Solved by the Invention However, the above method has the following problems.
第1の問題点は、封止成形用金型のキャビティに熔融し
た樹脂を注入するためのポット及びランナ・ゲートが必
要であり、また前記ポット及びランナ・ゲート部分に樹
脂が硬化して残りやすいので、樹脂が無駄になるばかり
でなく、樹脂が硬化し付着した状態では金型も使用でき
なくなり、コストアップの原因となることである。また
リードフレームが薄型で大面積である場合、樹脂がキャ
ビティ内で流動する間に硬化してしまうこともある。The first problem is that a pot, runner, and gate are required to inject molten resin into the cavity of the sealing mold, and the resin tends to harden and remain in the pot, runner, and gate. Therefore, not only is the resin wasted, but the mold becomes unusable when the resin is hardened and adhered, leading to an increase in costs. Furthermore, if the lead frame is thin and has a large area, the resin may harden while flowing within the cavity.
第2の問題点は、リードフレームと半導体素子との間が
ボンディングワイヤで電気的に接続されているものの樹
脂封止成形を行う場合には、前記ポット内で熔融した樹
脂がキャビティ内に流入する際、樹脂がボンディングワ
イヤに直、 接当たると、ワイヤ倒れ等の応力変形が起
こり品質が低下し、又ワイヤどうしが接続するという問
題があることである。The second problem is that when resin sealing is performed on a lead frame and a semiconductor element that are electrically connected by bonding wires, the resin melted in the pot flows into the cavity. In this case, if the resin comes into direct contact with the bonding wire, stress deformation such as wire collapse may occur, resulting in a decrease in quality, and there is also the problem that the wires may become connected to each other.
第3の問題点は、予備加熱時において、樹脂中に内在す
るエアー及び水分が完全に除去されずに残ったり、封止
工程において溶融した樹脂がランナ・ゲートを流動する
際にエアーを巻き込んだりすると成形品のボイド発生の
原因となることである。The third problem is that during preheating, the air and moisture contained in the resin are not completely removed and remain, and when the molten resin flows through the runner gate during the sealing process, air may be drawn in. This may cause voids to occur in the molded product.
課題を解決するための手段
本願の第1発明は上記第1の問題点を解決す、 るた
めに、半導体素子が表面に装着されたリードフレームに
対し、半導体素子の周囲を封止用樹脂で覆い、この封止
用樹脂を所定形状に形成してリードフレーム上に固着す
る半導体素子の対土方法において、最終的にリードフレ
ーム上=3−
に形成される封止用樹脂の形状に倣った形状のキャビテ
ィを有する予備加熱用金型を用い、封止用樹脂を予備加
熱すると共に前記キャビティの形状と一致する形状に成
形し、この予備加熱工程で得られた封止用金型を、最終
的にリードフレーム上に形成される封止用樹脂の外形状
に一致するキャビティを備えた封止用金型内に供給し、
金型内に配されたリードフレーム上に半導体素子を前記
封止用樹脂で封止することを特徴としている。Means for Solving the Problems The first invention of the present application solves the first problem described above.In order to solve the above first problem, the semiconductor element is surrounded by a sealing resin around the lead frame on which the semiconductor element is attached. In the soil mounting method for semiconductor devices, in which the encapsulating resin is formed into a predetermined shape and fixed on the lead frame, the shape of the encapsulating resin that is finally formed on the lead frame is imitated. Using a preheating mold having a shaped cavity, the sealing resin is preheated and molded into a shape that matches the shape of the cavity, and the sealing mold obtained in this preheating step is used as the final into a sealing mold equipped with a cavity that matches the outer shape of the sealing resin formed on the lead frame,
It is characterized in that a semiconductor element is sealed with the sealing resin on a lead frame arranged in a mold.
又本願の第2発明は上記第1、第2の問題点を解決する
ために、第1発明の構成に加え、予備加熱工程で成形さ
れる封止用樹脂が、その外形状がリードフレーム上に形
成される封止用樹脂の外形状に略一致すると共に、その
内形状が半導体素子及びボンディングワイヤに干渉しな
い凹部を有した形状にしたことを特徴としている。Further, in order to solve the first and second problems described above, the second invention of the present application, in addition to the structure of the first invention, provides a sealing resin molded in the preheating step whose outer shape is on the lead frame. It is characterized in that it has a shape that substantially matches the outer shape of the sealing resin formed in the mold, and has a recessed part whose inner shape does not interfere with the semiconductor element and the bonding wire.
更に本願の第3発明では、上記第1、第3!71問題点
ないしは上記第1〜第3の問題点を解決=4−
するために、上記□第1発明または第2発明の構成に加
え、予備加熱用金型にキャビティ内の空気を吸引する吸
引装置を備え、予備加熱工程を減圧下で行い、予備加熱
後の封止用樹脂で半導体素子を封止する際、封止用金型
の型締めを減圧下で行うこと萎特徴としている。Furthermore, in the third invention of the present application, in order to solve the above first and third problems or the first to third problems, in addition to the structure of the above □ first invention or second invention. , the preheating mold is equipped with a suction device that sucks the air in the cavity, the preheating process is performed under reduced pressure, and when the semiconductor element is sealed with the preheated sealing resin, the sealing mold The mold clamping process is performed under reduced pressure.
作用
本願の第1発明によれば、予備加熱金型内に封入された
封止用樹脂は、予備加熱されて軟化し、最終的にリード
フレーム上に形成される封止用樹脂の形状に倣った形状
に成形される。成形された封止用樹脂は、半導体素子が
装着されたリードフレームと共に封止用金型のキャビテ
ィ内に直接投入され、封止用金型の型締によって、過不
足のない量の樹脂で半導体素子を封止することができ諷
。このため封止用金型にはポット、ランナ・ゲートが不
要となり、硬化した樹脂がランナー・ゲート等に残留す
るという問題点を解消することができ、又樹脂がキャビ
ティ内で流動する間に硬化してしまうという問題点も解
消することができる。According to the first invention of the present application, the sealing resin sealed in the preheating mold is preheated and softened, so that it conforms to the shape of the sealing resin that is finally formed on the lead frame. It is molded into a shape. The molded encapsulation resin is directly poured into the cavity of the encapsulation mold together with the lead frame on which the semiconductor element is mounted, and the semiconductor is molded with just the right amount of resin by clamping the encapsulation mold. It is possible to seal the element. This eliminates the need for pots, runners, and gates in the sealing mold, solving the problem of hardened resin remaining on the runners, gates, etc., and hardening the resin while it flows inside the cavity. It is also possible to solve the problem of
本願の第2の発明によれば、予備加熱工程において成形
された樹脂の内形状が、半導体素子及びボンディングワ
イヤに干渉しない凹部を有した形状となっているため、
樹脂を封止用金型内に供給する際、樹脂が半導体素子及
びボンディングワイヤに直接力たることがなく、ワイヤ
倒れ等の応力変形を起こすことを防止することができる
。According to the second invention of the present application, the inner shape of the resin molded in the preheating step has a recess that does not interfere with the semiconductor element and the bonding wire.
When the resin is supplied into the mold for sealing, the resin does not exert any direct force on the semiconductor element and the bonding wire, and stress deformation such as wire collapse can be prevented.
本願の第3の発明によれば、予備加熱金型にはキャビテ
ィ内の空気を吸引する吸引装置が設けられており、予備
加熱は減圧下にて行われるため、予備加熱中に樹脂に内
在していたエアー及び水分は樹脂から吸引排出され、予
備加熱成形後の樹脂中のエアー及び水分は減少する。予
備加熱後、封止用金型に投入された樹脂は、減圧下で型
締めされ加熱溶融硬化するので、型締め時に樹脂内にエ
アーが巻き込まれるのを防止することができる。According to the third invention of the present application, the preheating mold is provided with a suction device that sucks the air in the cavity, and since the preheating is performed under reduced pressure, there is no residual air present in the resin during the preheating. The air and moisture contained in the resin are suctioned and discharged from the resin, and the air and moisture in the resin after preheating and molding are reduced. After preheating, the resin put into the sealing mold is clamped under reduced pressure and heated to melt and harden, so that it is possible to prevent air from being drawn into the resin during clamping.
実施例
以下、本発明の実施例を第1図〜第4図を参照して説明
する。第1図及び第2図は予備加熱工程、第3図及び第
4図は封止工程である。Embodiments Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1 to 4. 1 and 2 show the preheating process, and FIGS. 3 and 4 show the sealing process.
第1図には、上下一対の金型4a、3aからなる第1の
予備加熱用金型2a、及び上金型4aと下金型3aを各
々摺動可能に嵌合した成形シリンダ1が示されている。FIG. 1 shows a first preheating mold 2a consisting of a pair of upper and lower molds 4a and 3a, and a molding cylinder 1 in which the upper mold 4a and the lower mold 3a are slidably fitted. has been done.
成形シリンダ1の両側には、加熱手段(図示せず)が設
けられている。前記上金型4aの下面には、第3図の封
止用金型30における上金型12の上側キャビティ14
に対応する四部22aが設けられ、また前記四部22a
と外部の真空ポンプ(図示せず)を連通ずる微細連通孔
6aが設けられている。一方前記下金型3aの上面には
、リードフレーム20上に載置された半導体素子17と
ボンディングワイヤ18に倣った形状の凸部23が設け
られている。そして第1図に示すように、第1の予備加
熱用金型2aは、上下金型4a、 3a間に最終的にリ
ードフレーム20の上側に形成される封止用樹脂5Bの
形状に倣った形状のキャビティ3]、aを有している。Heating means (not shown) are provided on both sides of the forming cylinder 1. The lower surface of the upper mold 4a has an upper cavity 14 of the upper mold 12 in the sealing mold 30 shown in FIG.
Four parts 22a corresponding to the four parts 22a are provided, and the four parts 22a
A fine communication hole 6a is provided for communicating with an external vacuum pump (not shown). On the other hand, a convex portion 23 shaped like the semiconductor element 17 and bonding wire 18 placed on the lead frame 20 is provided on the upper surface of the lower mold 3a. As shown in FIG. 1, the first preheating mold 2a follows the shape of the sealing resin 5B that will eventually be formed on the upper side of the lead frame 20 between the upper and lower molds 4a and 3a. The cavity 3] has a shape of a cavity 3], a.
第2図には、第1図のものと同様に上下一対の金型4b
、3bからなる第2の予備加熱用金型2bが示されてい
る。前記上金型4bの下面には、第3図の封止用金型3
0における下金型11の下側キャビティ13に対応する
凹部22bが設けられ、第1の予備加熱用金型2aと同
様の微細連通孔6bが設けられており、一方下金型3b
の上面には、凸部25が設けられている。そして第2図
に示すように、第2の予備加熱用金型2bは、上下金型
41〕、31)間に最終的にリードフレーム20の下側
に形成される封止用樹脂9Bの形状に倣った形状のキャ
ビティ31bを有している。FIG. 2 shows a pair of upper and lower molds 4b similar to those in FIG.
, 3b is shown. The lower surface of the upper mold 4b is provided with a sealing mold 3 as shown in FIG.
A recess 22b corresponding to the lower cavity 13 of the lower mold 11 in 0 is provided, and a fine communication hole 6b similar to the first preheating mold 2a is provided.
A convex portion 25 is provided on the upper surface. As shown in FIG. 2, the second preheating mold 2b has the shape of the sealing resin 9B that is finally formed on the lower side of the lead frame 20 between the upper and lower molds 41] and 31). It has a cavity 31b having a shape similar to the following.
第1図の上下金型4a、3aを開いて第1の予備加熱用
金型2aのキャビティ31a内に封止用樹脂を投入し、
上下金型4a、3aを閉じ、次いで加熱手段により樹脂
を加熱して予備加熱が行われる。予備加熱中は、真空ポ
ンプを作動して微細連通孔6を通してキャビティ31a
内の空気を吸引し、減圧状態にする。加熱によって徐々
に樹脂は軟化し、上下金型4a、3aによって加圧成形
さQ−
= 8−
れるが、このとき発生する樹脂に内在していたエアーが
押し出され、また樹脂にもともと含まれる水分は気化し
て前記連通孔6aより吸引排出されるので、エアーと水
分が除去された状態で、前記半導体素子]7とボンディ
ングワイヤ18に倣った形状の凹部を備えた上側の封止
用樹脂5^が成形される。Open the upper and lower molds 4a and 3a in FIG. 1, and put the sealing resin into the cavity 31a of the first preheating mold 2a.
The upper and lower molds 4a, 3a are closed, and then the resin is heated by a heating means to perform preliminary heating. During preheating, the vacuum pump is operated to cool the cavity 31a through the fine communication holes 6.
Suction the air inside to create a reduced pressure state. The resin gradually softens due to heating, and is pressure-molded by the upper and lower molds 4a and 3a, but the air that was generated in the resin is pushed out, and the water originally contained in the resin is is vaporized and suctioned and discharged from the communication hole 6a, so that the semiconductor element 7 and the upper sealing resin 5 having a recess shaped like the bonding wire 18 are removed from the air and moisture. ^ is formed.
同様な操作を第2図の第2の予備加熱用金型2bを用い
て行い、下側の封止用樹脂9^を成形する。A similar operation is performed using the second preheating mold 2b shown in FIG. 2 to mold the lower sealing resin 9^.
次に、予備加熱成形された上下の封止用樹脂5A、9A
は予備加熱温度を保持した状態で、半導体素子17、ボ
ンディングワイヤ18を装着したリードフレーム20と
共に、第3図に示す封止工程の封止用金型30のキャビ
ティ32内に供給される。すなわち、加熱手段(図示せ
ず)を備え成形温度(例えば180°C)に保持されて
いる封止用金型30の上下金型12.11の間にリード
フレーム20が配置され、その上方に上側の封止用樹脂
5^が、その下方に下側の封止用樹脂9Aが夫々配置−
1〇−
される。上下金型12.11を閉じると、上下の封止用
樹脂5A、9Aは前記半導体素子17とボンデインクワ
イヤ18を装着したリードフレーム2oに倣った形状に
予備加熱成形されているので、リードフレーム20に装
着されている半導体素子17やボンディングワイヤ18
に応力変形等の悪影響を与えることがなく、過不足のな
い量でキャビティ32内に充填される。そして第4図に
示すように加熱された状態で封止用金型30を型締めす
ると、封止用樹脂は溶融軟化し、前記半導体素子17及
びボンディングワイヤ18を封止して、第4図に5B、
9Bで示すように成形される。この封止工程は周囲を
密閉し、外部に設けた真空ポンプ(図示せず)を利用し
、減圧下で行って、型締めをした際に樹脂内にエアーを
巻き込んで、成形品内部にエアーが残ることを防止する
。Next, the upper and lower sealing resins 5A and 9A are preheated and molded.
is supplied into the cavity 32 of the sealing mold 30 for the sealing process shown in FIG. 3 together with the semiconductor element 17 and the lead frame 20 to which the bonding wires 18 are attached while maintaining the preheating temperature. That is, the lead frame 20 is arranged between the upper and lower molds 12 and 11 of the sealing mold 30, which is equipped with a heating means (not shown) and maintained at a molding temperature (for example, 180° C.), and the lead frame 20 is placed above it. The upper sealing resin 5^ and the lower sealing resin 9A are placed below it.
10- will be done. When the upper and lower molds 12.11 are closed, the upper and lower sealing resins 5A and 9A are preheated and molded into a shape that follows the lead frame 2o on which the semiconductor element 17 and the bonding wire 18 are mounted, so that the lead frame Semiconductor element 17 and bonding wire 18 attached to 20
The cavity 32 is filled in just the right amount without causing any adverse effects such as stress deformation or the like. Then, as shown in FIG. 4, when the sealing mold 30 is clamped in a heated state, the sealing resin melts and softens and seals the semiconductor element 17 and bonding wire 18, as shown in FIG. 5B,
It is molded as shown in 9B. This sealing process is performed under reduced pressure by sealing the surrounding area and using an external vacuum pump (not shown), and when the mold is clamped, air is drawn into the resin, causing air to enter the molded product. Prevent from remaining.
発明の効果
本願の第1発明によれば、封止成形用金型にポットやラ
ンナ・ゲートが不要となり、ポットやランナ・ゲートに
樹脂が硬化して残るという問題が解決でき、樹脂の無駄
な使用を省き、金型の維持も容易になるので、コストダ
ウンを図ることができ、かつ樹脂がキャビティ内で流動
する間に硬化してしまうという従来例の問題点を解決す
ることができる。Effects of the Invention According to the first invention of the present application, there is no need for a pot, runner, or gate in the mold for sealing molding, and the problem of hardened resin remaining on the pot, runner, or gate can be solved, and resin is not wasted. Since the use of the mold is omitted and maintenance of the mold becomes easy, costs can be reduced, and the problem of the conventional example in which the resin hardens while flowing within the cavity can be solved.
本願の第2発明によれば、上記第1発明の効果に加えて
、ボンディングワイヤのワイヤ倒れやワイヤ間の接触を
防ぐことができるという効果がある。According to the second invention of the present application, in addition to the effects of the first invention, there is an effect that wire collapse of the bonding wire and contact between wires can be prevented.
本願の第3発明によれば、上記第1発明の効果、又は上
記第1、第2発明の効果に加え、ボイド発生のおそれが
ない、高品質の製品を提供することができるという効果
がある。According to the third invention of the present application, in addition to the effects of the first invention or the effects of the first and second inventions, it is possible to provide a high-quality product without the risk of void generation. .
第1図及び第2図は夫々本発明の一実施例に用いる予備
加熱装置の要部の断面図、第3図は樹脂投入時の封止成
形工程を示す断面図、第4図は型締め時の対土用成形工
程を示す断面図である。
2a、2b−・−・−−−一一子備加熱用金型−11=
5A、 9A、5B、9B・・封止用樹脂6a、6b・
・・・−・−・・・−−−一−〜微細連通孔17・−−
一−−−−−・−・−−−−−・−半導体素子18−
・−・−−−−−−−−−−−−−−ボンディングワイ
ヤ20− ・−・−−−−−一−−−・・ リードフレ
ーム30・−−−−−−・−−−−−−・・・・・・・
封止用金型31a 、 31b−−一一−キャビティ3
2−・−−−〜−−−−−−−−−−−−−−−−キャ
ビティ代理人 弁理士 石 原 勝Figures 1 and 2 are sectional views of essential parts of a preheating device used in an embodiment of the present invention, Figure 3 is a sectional view showing the sealing molding process during resin injection, and Figure 4 is a mold clamping process. It is a sectional view showing the soil forming process at the time. 2a, 2b-----11 heating mold-11 = 5A, 9A, 5B, 9B... Sealing resin 6a, 6b.
・・・−・−・・・−−−1−~Minute communication hole 17・−−
1------・--------Semiconductor element 18-
・−・−−−−−−−−−−−−−−Bonding wire 20− ・−・−−−−−1−−−・Lead frame 30・−−−−−−・−−−− −−・・・・・・・・・
Sealing molds 31a, 31b--11-cavity 3
2−・−−−〜−−−−−−−−−−−−−−−− Cavity agent Patent attorney Masaru Ishihara
Claims (3)
対し、半導体素子の周囲を封止用樹脂で覆い、この封止
用樹脂を所定形状に形成してリードフレーム上に固着す
る半導体素子の封止方法において、最終的にリードフレ
ーム上に形成される封止用樹脂の形状に倣った形状のキ
ャビティを有する予備加熱用金型を用い、封止用樹脂を
予備加熱すると共に前記キャビティの形状と一致する形
状に成形し、この予備加熱工程で得られた封止用樹脂を
、最終的にリードフレーム上に形成される封止用樹脂の
外形状に一致するキャビティを備えた封止用金型内に供
給し、型締めを行い、金型内に配されたリードフレーム
上に半導体素子を前記封止用樹脂で封止することを特徴
とする半導体素子の封止方法。(1) For a lead frame on which a semiconductor element is attached, the periphery of the semiconductor element is covered with a sealing resin, and the sealing resin is formed into a predetermined shape and fixed onto the lead frame. In the sealing method, a preheating mold having a cavity shaped to follow the shape of the sealing resin that will eventually be formed on the lead frame is used to preheat the sealing resin and mold the mold to match the shape of the cavity. The sealing resin obtained in this preheating process is molded into a matching shape and is then molded into a sealing mold with a cavity that matches the outer shape of the sealing resin that will be finally formed on the lead frame. 1. A method for encapsulating a semiconductor element, comprising: supplying the resin into a mold, clamping the mold, and sealing the semiconductor element with the encapsulating resin on a lead frame arranged within the mold.
形状がリードフレーム上に形成される封止用樹脂の外形
状に略一致すると共に、その内形状が半導体素子及びボ
ンディングワイヤに干渉しない凹部を有した形状である
請求項1記載の半導体素子の封止方法。(2) The sealing resin molded in the preheating process has an outer shape that approximately matches the outer shape of the sealing resin formed on the lead frame, and an inner shape that matches the semiconductor element and bonding wire. 2. The method for sealing a semiconductor element according to claim 1, wherein the semiconductor element has a shape having a concave portion that does not interfere with each other.
吸引装置を備え、予備加熱工程を減圧下で行い、予備加
熱後の封止用樹脂で半導体素子を封止する際、封止用金
型の型締めを減圧下で行う請求項1又は2記載の半導体
素子の封止方法。(3) The preheating mold is equipped with a suction device that sucks the air inside the cavity, and when the preheating process is performed under reduced pressure and the semiconductor element is sealed with the preheated sealing resin, the 3. The method for sealing a semiconductor device according to claim 1, wherein the mold is clamped under reduced pressure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30752990A JPH04179242A (en) | 1990-11-13 | 1990-11-13 | Sealing method for semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30752990A JPH04179242A (en) | 1990-11-13 | 1990-11-13 | Sealing method for semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04179242A true JPH04179242A (en) | 1992-06-25 |
Family
ID=17970189
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP30752990A Pending JPH04179242A (en) | 1990-11-13 | 1990-11-13 | Sealing method for semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04179242A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0626723A1 (en) * | 1993-05-11 | 1994-11-30 | Kabushiki Kaisha Toshiba | Resin sheet for encapsulating semiconductor device |
DE10355065B4 (en) * | 2002-11-26 | 2015-05-28 | Fujitsu Semiconductor Ltd. | Method for casting with resin and resin material for the process |
-
1990
- 1990-11-13 JP JP30752990A patent/JPH04179242A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0626723A1 (en) * | 1993-05-11 | 1994-11-30 | Kabushiki Kaisha Toshiba | Resin sheet for encapsulating semiconductor device |
US5424250A (en) * | 1993-05-11 | 1995-06-13 | Kabushiki Kaisha Toshiba | Manufacturing method of encapsulating semiconductor device using two resin sheets having convex portions |
DE10355065B4 (en) * | 2002-11-26 | 2015-05-28 | Fujitsu Semiconductor Ltd. | Method for casting with resin and resin material for the process |
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