JPH04171170A - Wafer polishing method and top ring thereof - Google Patents
Wafer polishing method and top ring thereofInfo
- Publication number
- JPH04171170A JPH04171170A JP2299640A JP29964090A JPH04171170A JP H04171170 A JPH04171170 A JP H04171170A JP 2299640 A JP2299640 A JP 2299640A JP 29964090 A JP29964090 A JP 29964090A JP H04171170 A JPH04171170 A JP H04171170A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- weight
- top ring
- polishing
- rotated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims description 7
- 230000002265 prevention Effects 0.000 claims description 4
- 238000007517 polishing process Methods 0.000 claims 1
- 239000012530 fluid Substances 0.000 abstract description 7
- 239000004744 fabric Substances 0.000 abstract description 4
- 239000000314 lubricant Substances 0.000 abstract 1
- 239000012528 membrane Substances 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 230000000284 resting effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 30
- 239000010409 thin film Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/061—Work supports, e.g. adjustable steadies axially supporting turning workpieces, e.g. magnetically, pneumatically
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、シリコン半導体等のウェハーの研磨方法およ
びこれに用いるウェハー研磨装置用トップリングに関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for polishing wafers such as silicon semiconductors and a top ring for a wafer polishing apparatus used in the method.
［従来の技術］
従来シリコン半導体等のウェハーを鏡面研磨する場合に
は、第２図に示すような研磨装置が実用されている。[Prior Art] Conventionally, when mirror polishing a wafer such as a silicon semiconductor, a polishing apparatus as shown in FIG. 2 has been put into practical use.
すなわちウェハー１をプレート２の１面に貼り付け、ウ
ェハー１を下にして研磨定盤１上に載置し、プレート１
の上面をトップリング生の逆皿状ヘッド５で押圧し、研
磨定盤主とトップリング生を回転してウェハー１を研磨
する。ウェハー１に対する押圧力はヘッド５上に置かれ
、ヘッドと共に回転するリング状ウェイト６の量を加減
して調節する。That is, the wafer 1 is pasted on one side of the plate 2, placed on the polishing surface plate 1 with the wafer 1 facing down, and the plate 1
The upper surface of the wafer 1 is pressed by an inverted dish-shaped head 5 of a raw top ring, and the main polishing surface plate and the raw top ring are rotated to polish the wafer 1. The pressing force against the wafer 1 is adjusted by adjusting the amount of a ring-shaped weight 6 placed on the head 5 and rotating together with the head.
［発明が解決しようとする課題］
しかしながらかかる装置では、ウェハー１を貼り付けた
プレート２とヘッド５は一体となって回転しているので
、ヘッド５の抑圧のバランスが少しでも狂っていると、
このアンバランスは終始同じ状態で各ウェハーに影響し
、ウェハー１は貼り付は場所によって強く押圧されたり
弱く押圧されたりして、不均一に研磨され品質の低下を
きたすという不利があった・
［課題を解決するための手段］
本発明者は、かへる不利を解決するため検討を重ねた結
果本発明を完成したのであって、これは。[Problems to be Solved by the Invention] However, in such an apparatus, the plate 2 to which the wafer 1 is attached and the head 5 rotate together, so if the balance of suppression of the head 5 is even slightly out of order,
This unbalance affects each wafer in the same way from beginning to end, and wafer 1 has the disadvantage of being pressed too hard or too weakly depending on the location, resulting in non-uniform polishing and deterioration in quality. Means for Solving the Problem] The present inventor has completed the present invention as a result of repeated studies to solve the disadvantages.
プレートに貼り付けたウェハーを、ウェイトを載置して
回転するトップリングにより研磨定盤に押圧して研磨す
る方法において、該ウェイトの回転を阻止状態におくこ
とを特徴とするウェハー研磨方法と、プレートに貼り付
けたウェハーを、ウェイトを載置して回転するトップリ
ングにより研磨定盤に押圧して研磨するウェハー研磨装
置において、該ウェイトに回転阻止手段を設けてなるこ
とを特徴とするウェハー研磨装置用トップリングである
。A wafer polishing method in which a wafer affixed to a plate is pressed against a polishing surface plate by a rotating top ring on which a weight is mounted, the wafer polishing method being characterized in that rotation of the weight is prevented; A wafer polishing apparatus for polishing a wafer attached to a plate by pressing it against a polishing surface plate by a rotating top ring on which a weight is placed, characterized in that the weight is provided with rotation prevention means. This is a top ring for the device.
かかる本発明の装置における回転阻止手段によりウェイ
トの回転を止めた結果、各ウェハーはウェイトに対し無
関係に移動し、その移動軌跡はウェイトの抑圧面の各部
を通過するので、押圧力がバランスしていなくてもウェ
ハーは均一に押圧され、高精度の研磨が行われる。As a result of stopping the rotation of the weight by the rotation prevention means in the apparatus of the present invention, each wafer moves independently of the weight, and its movement trajectory passes through various parts of the suppressing surface of the weight, so that the pressing force is balanced. Even without it, the wafer can be pressed uniformly and polished with high precision.
以下図面によって本発明をさらに詳細に説明する。The present invention will be explained in more detail below with reference to the drawings.
第１図は本発明の方法を実施する装置を示すもので、研
磨定盤且は水平に回転するターンテーブル７と、この上
に接看されたクロス８よりなり、その外周部に上から回
転自在のトップリング土が垂下している。トップリング
の下部には逆皿状のヘッド５を備え、その周縁に可撓性
薄膜９を取付け、ヘッドと薄膜で形成された密閉空間に
流体供給管１０から流体を圧入する。つぎに−面にウェ
ハー１を貼り付けたプレート２をウェハー側を下にして
トップリング±の直下のクロス８上に載置し、トップリ
ングエラ下降させ可撓性薄膜９の下面でプレートを押圧
する。ついで流体供給管１０から注入する流体の圧力を
調節して可撓性薄膜９がプレート２を全面にわたって均
等に押圧するようにし、ノズル１１より砥液をクロス８
上に流しながら、ターンテーブル７、トップリング土を
図示しない回転機構により回転させると、ウェハー１の
下面がクロス８により研磨される。このときウェイト６
の量を加減して押圧力を調節し、適切な研磨速度でウェ
ハーを研磨するが、ウェイト６は、載置台１２に載せら
れ、ウェイトを貫通する回転阻止腕１３によって回転し
ないトップリング主軸１４に固定されて−いるので、ヘ
ッドが回転してもウェイト６は回転しない、載置台はト
ップリング主軸保持部１５にボールベアリング１６を介
して接しているので、ヘッドの回転を妨げることはない
。Fig. 1 shows an apparatus for carrying out the method of the present invention, which consists of a polishing surface plate or turntable 7 that rotates horizontally, and a cloth 8 that is placed in contact with the turntable 7. Free top ring soil is hanging down. The lower part of the top ring is provided with an inverted dish-shaped head 5, a flexible thin film 9 is attached to the periphery of the head 5, and fluid is pressurized from a fluid supply pipe 10 into the sealed space formed by the head and the thin film. Next, place the plate 2 with the wafer 1 attached to the − side on the cross 8 directly under the top ring ± with the wafer side facing down, and lower the top ring gill to press the plate with the bottom surface of the flexible thin film 9. do. Next, the pressure of the fluid injected from the fluid supply pipe 10 is adjusted so that the flexible thin film 9 presses the plate 2 evenly over the entire surface, and the abrasive liquid is poured from the nozzle 11 into the cloth 8.
When the turntable 7 and top ring soil are rotated by a rotating mechanism (not shown) while flowing upward, the lower surface of the wafer 1 is polished by the cloth 8. At this time weight 6
The wafer is polished at an appropriate polishing speed by adjusting the pressing force by increasing or decreasing the amount of Since it is fixed, the weight 6 does not rotate even when the head rotates, and since the mounting table is in contact with the top ring main shaft holder 15 via a ball bearing 16, it does not interfere with the rotation of the head.
かかる構成によってウェハーの移動軌跡は、ウェイトの
各部を均等に通過し、ウェハーは均一に抑圧、研磨され
る。With this configuration, the movement locus of the wafer passes through each part of the weight equally, and the wafer is uniformly suppressed and polished.
［発明の効果］
本発明により、ウェハーに対するウェイトの抑圧にアン
バランスがあっても、ウェイトに対しウェハーが相対運
動をして結果的に均一な研磨が行われ高品質のウェハー
を得ることができる。[Effects of the Invention] According to the present invention, even if there is an unbalance in suppressing the weight against the wafer, the wafer moves relative to the weight, resulting in uniform polishing and high-quality wafers. .
第１図は本発明のトップリングをもつウェハー研磨装置
の部分断面図、第２図は従来のウェハー研磨装置の部分
断面図である。
１・・・ウェハー、 ２・・・プレート、 −塁一・・
・研磨定盤、４・・・トップリング、 ５・・・ヘッ
ド、６・・・ウェイト、 ７・・・ターンテへプル、
８・・・クロス、 ９・・・可撓性薄膜。
１０・・・流体供給管、 １１・・・ノズル、１２・
・・載置台、 １３・・・回転阻止腕、１４・・・ト
ップリング主軸、
１５・・・トップリング主軸保持部。
１６・・・ボールベアリング。
第１図
第２図FIG. 1 is a partial sectional view of a wafer polishing apparatus having a top ring according to the present invention, and FIG. 2 is a partial sectional view of a conventional wafer polishing apparatus. 1...Wafer, 2...Plate, -Base 1...
・Polishing surface plate, 4...Top ring, 5...Head, 6...Weight, 7...Pull to turnte,
8...Cross, 9...Flexible thin film. 10... Fluid supply pipe, 11... Nozzle, 12...
...Placement table, 13...Rotation prevention arm, 14...Top ring main shaft, 15...Top ring main shaft holding part. 16...Ball bearing. Figure 1 Figure 2
Claims (1)
して回転するトップリングにより研磨定盤に押圧して研
磨する方法において、該ウェイトの回転を阻止状態にお
くことを特徴とするウェハー研磨方法。 ２）プレートに貼り付けたウェハーを、ウェイトを載置
して回転するトップリングにより研磨定盤に押圧して研
磨するウェハー研磨装置において、該ウェイトに回転阻
止手段を設けてなることを特徴とするウェハー研磨装置
用トップリング。[Claims] 1) In a method of polishing a wafer attached to a plate by pressing it against a polishing surface plate using a rotating top ring on which a weight is placed, the rotation of the weight is prevented. Characteristic wafer polishing method. 2) A wafer polishing apparatus for polishing a wafer attached to a plate by pressing it against a polishing surface plate by a rotating top ring on which a weight is placed, characterized in that the weight is provided with rotation prevention means. Top ring for wafer polishing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02299640A JP3118457B2 (en) | 1990-11-05 | 1990-11-05 | Wafer polishing method and top ring used for it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02299640A JP3118457B2 (en) | 1990-11-05 | 1990-11-05 | Wafer polishing method and top ring used for it |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04171170A true JPH04171170A (en) | 1992-06-18 |
| JP3118457B2 JP3118457B2 (en) | 2000-12-18 |
Family
ID=17875206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02299640A Expired - Fee Related JP3118457B2 (en) | 1990-11-05 | 1990-11-05 | Wafer polishing method and top ring used for it |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3118457B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5449316A (en) * | 1994-01-05 | 1995-09-12 | Strasbaugh; Alan | Wafer carrier for film planarization |
| US5851140A (en) * | 1997-02-13 | 1998-12-22 | Integrated Process Equipment Corp. | Semiconductor wafer polishing apparatus with a flexible carrier plate |
| US5993302A (en) * | 1997-12-31 | 1999-11-30 | Applied Materials, Inc. | Carrier head with a removable retaining ring for a chemical mechanical polishing apparatus |
| US6080050A (en) * | 1997-12-31 | 2000-06-27 | Applied Materials, Inc. | Carrier head including a flexible membrane and a compliant backing member for a chemical mechanical polishing apparatus |
-
1990
- 1990-11-05 JP JP02299640A patent/JP3118457B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5449316A (en) * | 1994-01-05 | 1995-09-12 | Strasbaugh; Alan | Wafer carrier for film planarization |
| US5851140A (en) * | 1997-02-13 | 1998-12-22 | Integrated Process Equipment Corp. | Semiconductor wafer polishing apparatus with a flexible carrier plate |
| US5993302A (en) * | 1997-12-31 | 1999-11-30 | Applied Materials, Inc. | Carrier head with a removable retaining ring for a chemical mechanical polishing apparatus |
| US6080050A (en) * | 1997-12-31 | 2000-06-27 | Applied Materials, Inc. | Carrier head including a flexible membrane and a compliant backing member for a chemical mechanical polishing apparatus |
| US6277009B1 (en) | 1997-12-31 | 2001-08-21 | Applied Materials, Inc. | Carrier head including a flexible membrane and a compliant backing member for a chemical mechanical polishing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3118457B2 (en) | 2000-12-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |