JPH04121744U - Package cage for storing semiconductor elements - Google Patents
Package cage for storing semiconductor elementsInfo
- Publication number
- JPH04121744U JPH04121744U JP1991026931U JP2693191U JPH04121744U JP H04121744 U JPH04121744 U JP H04121744U JP 1991026931 U JP1991026931 U JP 1991026931U JP 2693191 U JP2693191 U JP 2693191U JP H04121744 U JPH04121744 U JP H04121744U
- Authority
- JP
- Japan
- Prior art keywords
- metal
- brazing material
- external lead
- insulating base
- seal ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 87
- 239000002184 metal Substances 0.000 claims abstract description 87
- 238000005219 brazing Methods 0.000 claims abstract description 48
- 239000000463 material Substances 0.000 claims abstract description 39
- 238000002844 melting Methods 0.000 claims abstract description 29
- 230000008018 melting Effects 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 abstract description 25
- 239000000919 ceramic Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000000945 filler Substances 0.000 description 6
- 229910000833 kovar Inorganic materials 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 238000004080 punching Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
(57)【要約】
【目的】外部リード端子を絶縁基体に被着形成したメタ
ライズ配線層に正確、且つ強固に接合させて内部に収容
する半導体集積回路素子を所定の外部電気回路に正確に
電気的接続することができる半導体素子収納用パッケー
ジを提供することにある。
【構成】絶縁基体1 のメタライズ配線層5 に融点の高い
第１のロウ材8 を介して接合させ、メタライズ金属層9
に融点の低い第２のロウ材11を介して金属製シールリン
グ10を接合させた。外部リード端子7 が第１のロウ材8
を介してロウ付け接合されている絶縁基体1 に金属製シ
ールリングを第2 のロウ材11を介してロウ付け接合させ
る際、外部リード端子7 をロウ付け接合している第1 の
ロウ材8 が軟化溶融することは一切なく、外部リード端
子7 を絶縁基体1 の所定位置に正確、且つ確実に接合さ
せることができる。
(57) [Summary] [Purpose] External lead terminals are accurately and firmly bonded to a metallized wiring layer formed on an insulating substrate, and the semiconductor integrated circuit element housed inside is accurately and electrically connected to a predetermined external electric circuit. An object of the present invention is to provide a package for housing a semiconductor element that can be connected to each other. [Structure] The metallized wiring layer 5 of the insulating substrate 1 is bonded to the metallized metal layer 9 through the first brazing material 8 having a high melting point.
A metal seal ring 10 was bonded to the metal seal ring 10 via a second brazing material 11 having a low melting point. External lead terminal 7 is the first brazing material 8
When brazing the metal seal ring to the insulating base 1 which is brazed to the insulating base 1 through the second brazing material 11, the first brazing material 8 to which the external lead terminal 7 is brazed The external lead terminal 7 can be accurately and reliably joined to the predetermined position of the insulating base 1 without any softening or melting.
Description
【０００１】0001
本考案は半導体素子、特に半導体集積回路素子を収容するための半導体素子収 納用パッケージの改良に関するものである。 The present invention is a semiconductor element housing for accommodating semiconductor elements, especially semiconductor integrated circuit elements. This concerns improvements to the delivery package.
【０００２】0002
従来、半導体素子、特にLSI 等の半導体集積回路素子を収容するための半導体 素子収納用パッケージは、アルミナセラミックス等の電気絶縁性材料から成り、 その上面略中央部に半導体集積回路素子を収容するための凹部及び該凹部周辺よ り外周端にかけて導出されたタングステン(W) 、モリブデン(Mo)等の高融点金属 粉末から成る多数のメタライズ配線層を有する絶縁基体と、半導体集積回路素子 を外部電気回路に電気的に接続するために前記メタライズ配線層に銀ロウ等のロ ウ材を介して接合された外部リード端子と金属製蓋体とから構成されており、絶 縁基体の凹部底面に半導体集積回路素子を取着収容するとともに該半導体集積回 路素子の各電極をボンディングワイヤを介してメタライズ配線層に接続し、しか る後、絶縁基体上面に金属製蓋体を取着させ絶縁基体と金属製蓋体とから成る容 器内に半導体集積回路素子を気密に封止することによって最終製品としての半導 体装置となる。 Traditionally, semiconductors have been used to house semiconductor devices, especially semiconductor integrated circuit devices such as LSI. The device housing package is made of electrically insulating material such as alumina ceramics. A recess for accommodating a semiconductor integrated circuit element approximately in the center of the upper surface and a recess around the recess. High melting point metals such as tungsten (W) and molybdenum (Mo) are drawn out towards the outer peripheral edge. An insulating substrate having multiple metallized wiring layers made of powder and a semiconductor integrated circuit element A metallization layer such as silver solder is applied to the metallized wiring layer in order to electrically connect it to an external electric circuit. It consists of an external lead terminal and a metal lid body that are connected through a A semiconductor integrated circuit element is attached and housed in the bottom of the recess of the edge base, and the semiconductor integrated circuit is Each electrode of the circuit element is connected to the metallized wiring layer via a bonding wire, and After that, a metal lid is attached to the top surface of the insulating base, and the container consisting of the insulating base and the metal lid is closed. Semiconductor as a final product by hermetically sealing the semiconductor integrated circuit element inside the device. It becomes a body device.
【０００３】 尚、前記絶縁基体はその上面にコバール金属や42アロイ等から成る金属製シー ルリングが絶縁基体の上面に予め被着させていたメタライズ金属層に銀ロウ等の ロウ材を介して接合されており、該金属製シールリングに金属製蓋体をシームウ エルド法等により溶接することによって金属製蓋体は絶縁基体に取着される。0003 The insulating base has a metal sheet made of Kovar metal, 42 alloy, etc. on its top surface. The metallized metal layer that has been previously deposited on the top surface of the insulating substrate is coated with silver solder, etc. It is joined via brazing material, and the metal lid is seamed to the metal seal ring. The metal lid is attached to the insulating base by welding using the Erd method or the like.
【０００４】 また前記従来の半導体素子収納用パッケージは通常、外部リード端子と金属製 シールリングとが同じ融点のロウ材を介して絶縁基体に接合されており、具体的 には外部リード端子を絶縁基体に設けたメタライズ配線層に正確に位置合わせし てロウ付け接合し、次に金属製シーリングを絶縁基体の上面に被着させたメタラ イズ金属層に前記外部リード端子をロウ付けしているロウ材と同じロウ材を用い てロウ付け接合している。0004 In addition, the conventional semiconductor device storage packages mentioned above usually have external lead terminals and metal The seal ring is bonded to the insulating base via a brazing material with the same melting point. To do this, accurately align the external lead terminals to the metallized wiring layer provided on the insulating substrate. The metallization is bonded by brazing, and then a metal sealant is applied to the top surface of the insulating substrate. The same brazing material used to braze the external lead terminals to the is metal layer is used. It is joined by brazing.
【０００５】[0005]
しかしながら、この従来の半導体素子収納用パッケージにおいては、外部リー ド端子と金属製シールリングとが同じ融点のロウ材を介して絶縁基体に接合され ているため外部リード端子を絶縁基体に設けたメタライズ配線層に正確に位置合 わせしてロウ付け接合した後、金属製シールリングを絶縁基体に被着させたメタ ライズ金属層にロウ付け接合する際、外部リード端子を絶縁基体に接合している ロウ材が金属製シーリングをロウ付け接合する際の熱によって溶融し、外部リー ド端子がメタライズ配線層より外れたり、所定の位置からずれて隣接するメタラ イズ配線層に接触したりしてしまい、その結果、内部に収容する半導体集積回路 素子を外部電気回路に正確、且つ確実に接続することが困難となる欠点を有して いた。 However, in this conventional package for storing semiconductor elements, the external lead The terminal and the metal seal ring are bonded to the insulating base through a brazing material with the same melting point. This allows the external lead terminals to be accurately aligned with the metallized wiring layer provided on the insulating substrate. A metal seal ring is attached to an insulating base after brazing and bonding. When brazing to the rise metal layer, the external lead terminal is bonded to the insulating base. The solder metal melts due to the heat generated when brazing metal seals and causes external leakage. If the lead terminal is removed from the metallized wiring layer or deviated from the specified position, the adjacent metallization The semiconductor integrated circuit housed inside may come into contact with the noise wiring layer. It has the disadvantage that it is difficult to connect the device accurately and reliably to an external electric circuit. there was.
【０００６】[0006]
本考案は絶縁基体と金属製蓋体とから成る半導体素子収納用パッケージであっ て、前記絶縁基体に外部リード端子が第１のロウ材を介して接合され、また金属 製シールリングが前記第１のロウ材よりも融点の低い第2 のロウ材を介して接合 されていることを特徴とするものである。 The present invention is a package for storing semiconductor devices consisting of an insulating base and a metal lid. An external lead terminal is bonded to the insulating base via a first brazing material, and a metal The manufactured seal ring is joined via a second brazing material whose melting point is lower than that of the first brazing material. It is characterized by the fact that
【０００７】[0007]
次に本考案を添付図面に基づき詳細に説明する。 図1 は本考案にかかる半導体素子収納用パッケージの一実施例を示す断面図で あり、1 は絶縁基体、2 は金属製蓋体である。この絶縁基体1 と金属製蓋体2 と で半導体集積回路素子4 を収容するための容器3 が構成される。 Next, the present invention will be explained in detail based on the accompanying drawings. Figure 1 is a cross-sectional view showing an embodiment of the semiconductor device storage package according to the present invention. 1 is an insulating base and 2 is a metal lid. This insulating base 1 and metal lid 2 A container 3 for accommodating a semiconductor integrated circuit element 4 is constructed.
【０００８】 前記絶縁基体1 はアルミナセラミックス等の電気絶縁材料より成り、その上面 中央部に半導体集積回路素子4 を収容するための段状の凹部A が設けてあり、該 凹部A 底面には半導体集積回路素子4 が接着材を介し取着される。[0008] The insulating substrate 1 is made of an electrically insulating material such as alumina ceramics, and its upper surface A stepped recess A is provided in the center for accommodating the semiconductor integrated circuit element 4. A semiconductor integrated circuit element 4 is attached to the bottom surface of the recess A via an adhesive.
【０００９】 前記絶縁基体1 は例えばアルミナ(Al 2 O 3 ) 、シリカ(SiO2 ) 、マグネシア (MgO) 、カルシア(CaO) 等の原料粉末に適当な有機溶剤、溶媒を添加混合して泥 漿状となすとともにこれをドクターブレード法を採用することによってセラミッ クグリーンシート( セラミック生シート) を形成し、しかる後、前記セラミック グリーンシートに適当な打ち抜き加工を施すとともに複数枚積層し、約1600℃の 高温で焼成することによって製作される。The insulating substrate 1 is prepared by adding and mixing a suitable organic solvent or solvent to a raw material powder such as alumina (Al 2 O 3 ), silica (SiO 2 ), magnesia (MgO), or calcia (CaO) to form a slurry. A ceramic green sheet (ceramic green sheet) is formed by using the doctor blade method, and then the ceramic green sheet is subjected to an appropriate punching process, multiple sheets are laminated, and the ceramic green sheet is heated at a high temperature of about 1600℃. It is produced by firing.
【００１０】 また前記絶縁基体1 には凹部A の段状上面から容器3 の外部にかけて多数のメ タライズ配線層5 が被着形成されており、該メタライズ配線層5 の凹部A 段状上 面部には半導体集積回路素子4 の各電極がボンディングワイヤ6 を介して接続さ れ、また容器3 の外部に導出された部位には外部電気回路と接続される外部リー ド端子7 が接合されている。0010 In addition, the insulating base 1 has many metal parts extending from the stepped top surface of the recess A to the outside of the container 3. A metallized wiring layer 5 is deposited on the recess A of the metallized wiring layer 5. Each electrode of the semiconductor integrated circuit element 4 is connected to the surface portion via a bonding wire 6. In addition, an external lead connected to an external electric circuit is provided at the part led out to the outside of the container 3. terminal 7 is connected.
【００１１】 尚、前記外部リード端子7 が接合されるメタライズ配線層5 の表面には外部リ ード端子7 を強固に接合させるためにニッケルから成るメッキ金属層が1.0 乃至 3.0 μm の厚みに層着されている。[0011] Note that there is no external lead on the surface of the metallized wiring layer 5 to which the external lead terminal 7 is bonded. In order to firmly bond the board terminal 7, the plated metal layer made of nickel is It is layered to a thickness of 3.0 μm.
【００１２】 前記メタライズ配線層5 はタングステン、モリブデン、マンガン等の高融点金 属粉末から成り、該高融点金属粉末に適当な有機溶剤、溶媒を添加混合して得た 金属ペーストを絶縁基体1 と成るセラミックグリーンシートに従来周知のスクリ ーン印刷法等により印刷塗布しておくことによって絶縁基体1 の凹部A 段状上面 から容器3 の外部に導出すよう被着形成される。0012 The metallized wiring layer 5 is made of high melting point metal such as tungsten, molybdenum, manganese, etc. It is obtained by adding and mixing an appropriate organic solvent or solvent to the high melting point metal powder. The metal paste is applied to the ceramic green sheet that serves as the insulating substrate 1 using a well-known conventional method. The stepped top surface of the concave portion A of the insulating substrate 1 is formed by printing and coating using a printing method or the like. It is formed so as to lead out from the container 3 to the outside of the container 3.
【００１３】 また前記メタライズ配線層5 には外部リード端子7 が第1 のロウ材8 を介して 接合されており、該外部リード端子7 は内部に収容する半導体集積回路素子4 を 外部電気回路に接続する作用を為し、外部リード端子7 を外部電気回路に接続す ることによって内部に収容される半導体集積回路素子4 はメタライズ配線層5 と 外部リード端子7 とを介して外部電気回路に電気的に接続されることとなる。[0013] Further, an external lead terminal 7 is connected to the metallized wiring layer 5 via a first brazing material 8. The external lead terminal 7 connects the semiconductor integrated circuit element 4 housed inside. It acts to connect to an external electric circuit, and connects the external lead terminal 7 to the external electric circuit. By this, the semiconductor integrated circuit element 4 housed inside the metallized wiring layer 5 and It will be electrically connected to an external electric circuit via an external lead terminal 7.
【００１４】 尚、前記外部リード端子7 は絶縁基体1 のメタライズ配線層5 上に第1 のロウ 材8 を間に挟んで配置し、外部リード端子7 とメタライズ配線層5 とを正確に位 置合わせした後、第1 のロウ材8 を加熱溶融させることによってメタライズ配線 層5 の所定位置に正確、且つ確実に接合される。[0014] Note that the external lead terminal 7 is connected to the first row on the metallized wiring layer 5 of the insulating substrate 1. The external lead terminal 7 and the metallized wiring layer 5 are accurately positioned. After alignment, metallized wiring is formed by heating and melting the first brazing material 8. It is accurately and reliably bonded to the predetermined position of layer 5.
【００１５】 また前記外部リード端子7 はコバール金属(Fe-Ni-Co 合金) や42アロイ(Fe-Ni 合金) 等の金属から成り、コバール金属等のインゴット（塊) を従来周知の圧延 加工法、打ち抜き加工法等を採用することによって所定の板状に形成される。[0015] The external lead terminal 7 is made of Kovar metal (Fe-Ni-Co alloy) or 42 alloy (Fe-Ni The ingot (lump) of Kovar metal is rolled in a conventionally known manner. It is formed into a predetermined plate shape by employing a processing method, a punching method, etc.
【００１６】 更に前記外部リード端子7 を絶縁基体1 に被着形成させたメタライズ配線層5 に接合させる第1 のロウ材8 は融点が約850 ℃の高融点ロウ材から成り、例えば 銀85.0重量％、銅15.0重量％のロウ材が使用される。[0016] Further, a metallized wiring layer 5 on which the external lead terminals 7 are adhered to the insulating substrate 1 is formed. The first brazing filler metal 8 to be bonded to is made of a high melting point brazing filler metal with a melting point of approximately 850°C. A brazing material containing 85.0% silver and 15.0% copper by weight is used.
【００１７】 前記第1 のロウ材8 はその融点が後述する絶縁基体1 に金属製シールリング10 を接合させる第2 のロウ材11の融点より高くなっており、そのため絶縁基体1 の メタライズ配線層5 に外部リード端子7 を第 1のロウ材8 を介してロウ付け接合 させた後、絶縁基体1 に金属製シールリング10を第2 のロウ材11を介してロウ付 け接合させたとしても第1 のロウ材8 は第2 のロウ材11を加熱溶融させる熱によ って軟化溶融することは一切なく、外部リード端子7 を所定のメタライズ配線層 5 に正確、且つ確実に接合させておくことができる。[0017] The first brazing filler metal 8 has a melting point which will be described later and is attached to an insulating base 1 and a metal seal ring 10. The melting point of the insulating substrate 1 is higher than that of the second brazing material 11 to which the insulating substrate 1 is bonded. External lead terminal 7 is soldered to metallized wiring layer 5 via first brazing material 8. After that, a metal seal ring 10 is soldered to the insulating base 1 through a second soldering material 11. Even if they are joined together, the first brazing filler metal 8 is heated and melted by the second brazing filler metal 11. The external lead terminals 7 are connected to the specified metallized wiring layer without any softening or melting. 5 can be joined accurately and reliably.
【００１８】 前記絶縁基体1 にはまたその上面にメタライズ金属層9 が被着形成されており 、該メタライズ金属層9 上には更に金属製シールリング10が第2 のロウ材11を介 して接合されている。[0018] The insulating substrate 1 also has a metallized metal layer 9 deposited on its upper surface. A metal seal ring 10 is further placed on the metallized metal layer 9 with a second brazing material 11 interposed therebetween. and are joined together.
【００１９】 前記メタライズ金属層9 は金属製シーリング10を絶縁基体1 の上面に接合させ る際の下地金属として作用し、タングステンやモリブデン等の高融点金属粉末に より形成されている。[0019] The metallized metal layer 9 has a metal sealing member 10 bonded to the top surface of the insulating substrate 1. It acts as a base metal when melting, and is suitable for high melting point metal powders such as tungsten and molybdenum. It is more formed.
【００２０】 尚、前記メタライズ金属層9 はタグステン等の高融点金属粉末に有機溶剤、溶 媒を添加混合して得た金属ペーストを絶縁基体1 となるセラミックグリーンシー トに従来周知のスクリーン印刷法等により印刷塗布してくことによって絶縁基体 1 の上面に被着形成される。[0020] Note that the metallized metal layer 9 is formed by adding an organic solvent to a high melting point metal powder such as tagsten. The metal paste obtained by adding and mixing the medium is mixed with a ceramic green sheet that becomes the insulating substrate 1. The insulating substrate is coated by printing and coating using the conventionally well-known screen printing method etc. It is deposited on the top surface of 1.
【００２１】 また前記メタライズ金属層9 の表面には金属製シールリング10を強固に接合さ せるためにニッケルから成るメッキ金属が1.0 乃至3.0 μm の厚みに層着されて いる。[0021] Further, a metal seal ring 10 is firmly bonded to the surface of the metallized metal layer 9. In order to There is.
【００２２】 更に前記メタライズ金属層9 に接合される金属製シールリング10は金属製蓋体 2 を絶縁基体1 に取着する際の下地金属部材として作用し、金属製シールリング 10に金属製蓋体2 を従来周知のシームウエルド法等により溶接することによって 金属製蓋体2 は絶縁基体1 上に取着される。[0022] Further, a metal seal ring 10 bonded to the metallized metal layer 9 is a metal lid body. 2 to the insulating base 1, and serves as a metal sealing ring. By welding the metal lid body 2 to 10 using the conventionally well-known seam welding method, etc. A metal lid 2 is attached onto the insulating base 1.
【００２３】 前記金属製シールリング10は、絶縁基体1 のメタライズ金属層9 上に第2 のロ ウ材11を間に挟んで金属製シールリング10を載置させ、しかる後、第2 のロウ材 11を加熱溶融させることによってメタライズ金属層9 の所定位置にロウ付け接合 される。[0023] The metal seal ring 10 is formed on the metallized metal layer 9 of the insulating substrate 1 by a second metal seal ring 10. A metal seal ring 10 is placed with the brazing material 11 in between, and then a second brazing material 11 is placed in between. By heating and melting 11, the metallized metal layer 9 is brazed at a predetermined position. be done.
【００２４】 また前記金属製シールリング10はコバール金属や42アロイ等の金属から成り、 コバール金属等のインゴット( 塊) を従来周知の圧延加工法及び打ち抜き加工法 等を採用することによって所定の枠状( リング状) に形成される。[0024] Further, the metal seal ring 10 is made of metal such as Kovar metal or 42 alloy, Kovar metal ingots are processed by conventional rolling and punching methods. etc., it is formed into a predetermined frame shape (ring shape).
【００２５】 更に前記金属製シーリング10を絶縁基体1 の上面に被着形成させたメタライズ 金属層9 に接合させる第2 のロウ材11は融点が約780 ℃の低融点ロウ材から成り 、例えば銀72.0重量％、銅28.0重量％のロウ材が使用される。[0025] Further, the metal sealing member 10 is formed on the upper surface of the insulating substrate 1 by metallization. The second brazing material 11 to be bonded to the metal layer 9 is made of a low melting point brazing material with a melting point of approximately 780°C. For example, a brazing material containing 72.0% by weight of silver and 28.0% by weight of copper is used.
【００２６】 前記第2 のロウ材11はその融点が絶縁基体1 に外部リード端子7 を接合させて いる第1 のロウ材8 の融点より低いことから絶縁基体1 のメタライズ金属層9 に 金属製シールング10を第2 のロウ材11を介してロウ付け接合させる際、絶縁基体 1 のメタライズ配線層5 に外部リード端子7 を接合させている第1 のロウ材8 に 第2 のロウ材11を加熱溶融させるための熱が印加されたとしても第1 のロウ材8 は融点が高いことから軟化溶融することは一切なく、その結果、外部リード端子 7 を所定のメタライズ配線層5 に正確、且つ確実に接合させておくことが可能と なる。[0026] The melting point of the second brazing material 11 is such that the melting point is such that the external lead terminal 7 is bonded to the insulating base 1. The melting point of the first brazing filler metal 8 is lower than that of the metallized metal layer 9 of the insulating substrate 1. When joining the metal sealing 10 through the second brazing material 11, the insulating substrate The first brazing material 8 that connects the external lead terminal 7 to the metallized wiring layer 5 of Even if heat is applied to heat and melt the second brazing material 11, the first brazing material 8 Because it has a high melting point, it never softens or melts, and as a result, the external lead terminal 7 to a predetermined metallized wiring layer 5 accurately and reliably. Become.
【００２７】 かくして本考案の半導体素子収納用パッケージによれば、絶縁基体1 の凹部A 底面に半導体集積回路素子4 を接着材を介し取着するとともに該半導体集積回路 素子4 の各電極をメタライズ配線層5 にボンディングワイヤ6 を介して電気的に 接続し、しかる後、絶縁基体1 の上面に接合させた金属製シールリング10に金属 製蓋体2 をシームウエルド法等により溶接し、容器3 の内部を気密に封止するこ とによって製品としての半導体装置となる。[0027] Thus, according to the semiconductor device storage package of the present invention, the recess A of the insulating substrate 1 A semiconductor integrated circuit element 4 is attached to the bottom surface via an adhesive, and the semiconductor integrated circuit Each electrode of element 4 is electrically connected to metallized wiring layer 5 via bonding wire 6. After connecting, the metal is attached to the metal seal ring 10 bonded to the top surface of the insulating base 1. The lid body 2 is welded using a seam welding method or the like to airtightly seal the inside of the container 3. By doing so, it becomes a semiconductor device as a product.
【００２８】
尚、本考案は上述した実施例に限定されるものではなく、本考案の要旨を逸脱
しない範囲であれば種々の変更は可能であり、例えばメタライズ配線層5 、外部
リード端子7 、メタライズ金属層9 及び金属製シールリング10の各々の露出する
表面にニッケル、金等の耐蝕性に優れ、且つ良導電性の金属をメッキにより１．
０
乃至２０．０μm の厚みに層着させておくとメタライズ配線層5 、外部リード端
子7
、メタライズ金属層9 及び金属製シールリング10の酸化腐食が有効に防止される
とともに外部リード端子7 と外部電気回路との接続、メタライズ配線層5 とボン
ディングワイヤ6 との接続が極めて強固なものとなる。従って、メタライズ配線
層5 、外部リード端子7 、メタライズ金属層9 及び金属製シールリング10の各々
の露出する表面にはニッケル、金等をメッキにより1.0 乃至20.0μm の厚みに層
着させておくことが好ましい。The present invention is not limited to the embodiments described above, and various changes can be made without departing from the gist of the present invention. For example, the metallized wiring layer 5, the external lead terminal 7, 1. The exposed surfaces of each of the metallized metal layer 9 and the metal seal ring 10 are plated with a highly corrosion-resistant and highly conductive metal such as nickel or gold.
When the layers are deposited to a thickness of 0 to 20.0 μm, oxidation corrosion of the metallized wiring layer 5, external lead terminal 7, metalized metal layer 9, and metal seal ring 10 is effectively prevented, and the external lead terminal 7 and external The connection with the electric circuit and the connection between the metallized wiring layer 5 and the bonding wire 6 become extremely strong. Therefore, the exposed surfaces of each of the metallized wiring layer 5, external lead terminal 7, metallized metal layer 9, and metal seal ring 10 should be plated with nickel, gold, etc. to a thickness of 1.0 to 20.0 μm. is preferred.
【００２９】[0029]
本考案の半導体素子収納用パッケージによれば、絶縁基体に外部リード端子を 接合させるロウ材の融点を絶縁基体に金属製シールリングを接合させるロウ材の 融点より高いものとなしたことから外部リード端子が接合された絶縁基体に金属 製シールリングを接合させる際、外部リード端子を絶縁基体に接合させていロウ 材が軟化溶融することは一切なく、その結果、外部リード端子を絶縁基体に被着 形成したメタライズ配線層に正確、且つ確実に接合させることができ、内部に収 容する半導体集積回路素子を所定の外部電気回路に正確、且つ確実に電気的接続 することが可能となる。 According to the semiconductor device storage package of the present invention, external lead terminals are attached to the insulating base. The melting point of the brazing material to be bonded is set to the melting point of the brazing material to bond the metal seal ring to the insulating substrate. Since the material is higher than the melting point, the insulating base to which the external lead terminal is bonded is made of metal. When joining the manufactured seal ring, the external lead terminal is joined to the insulating base. The material does not soften or melt at all, and as a result, the external lead terminal can be attached to the insulating base. It can be accurately and reliably bonded to the formed metallized wiring layer, and the Accurately and reliably electrically connect a semiconductor integrated circuit element to a predetermined external electrical circuit. It becomes possible to do so.
【図１】本考案の半導体素子収納用パッケージの一実施
例を示す断面図である。FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor device storage package of the present invention.
１・・・・絶縁基体 ２・・・・金属製蓋体 ５・・・・メタライズ配線層 ７・・・・外部リード端子 ８・・・・第１のロウ材 ９・・・・メタライズ金属層 １０・・・・金属製シールリング １１・・・・第２のロウ材 1...Insulating base 2...Metal lid body 5...Metallized wiring layer 7...External lead terminal 8...First brazing material 9...Metallized metal layer 10...Metal seal ring 11...Second brazing material
Claims (1)
子収納用パッケージであって、前記絶縁基体に外部リー
ド端子が第１のロウ材を介して接合され、また金属製シ
ールリングが前記第１のロウ材よりも融点の低い第2 の
ロウ材を介して接合されていることを特徴とする半導体
素子収納用パッケージ。1. A package for housing a semiconductor device comprising an insulating base and a metal lid, wherein an external lead terminal is bonded to the insulating base via a first brazing material, and a metal seal ring is attached to the insulating base through a first brazing material. A package for housing a semiconductor device, characterized in that the package is bonded via a second brazing material having a lower melting point than the first brazing material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1991026931U JP2543236Y2 (en) | 1991-04-19 | 1991-04-19 | Package for storing semiconductor elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1991026931U JP2543236Y2 (en) | 1991-04-19 | 1991-04-19 | Package for storing semiconductor elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04121744U true JPH04121744U (en) | 1992-10-30 |
| JP2543236Y2 JP2543236Y2 (en) | 1997-08-06 |
Family
ID=31911325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1991026931U Expired - Lifetime JP2543236Y2 (en) | 1991-04-19 | 1991-04-19 | Package for storing semiconductor elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2543236Y2 (en) |
-
1991
- 1991-04-19 JP JP1991026931U patent/JP2543236Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2543236Y2 (en) | 1997-08-06 |
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