JP2543236Y2 - Package for storing semiconductor elements - Google Patents

Description

[Detailed description of the invention]

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to an improvement in a semiconductor device package for housing a semiconductor integrated circuit device.

[0002]

2. Description of the Related Art Conventionally, a package for accommodating a semiconductor element, particularly a semiconductor integrated circuit element such as an LSI, is made of an electrically insulating material such as alumina ceramics, and has a semiconductor integrated circuit disposed substantially at the center of its upper surface. An insulating base having a plurality of metallized wiring layers made of a high melting point metal powder such as tungsten (W) or molybdenum (Mo) led out from the periphery of the recess to the outer peripheral end thereof for accommodating the element, and a semiconductor integrated circuit element An external lead terminal and a metal lid joined to the metallized wiring layer via a brazing material such as silver brazing in order to electrically connect the metallized wiring layer to an external electric circuit. The semiconductor integrated circuit device is mounted and accommodated, and each electrode of the semiconductor integrated circuit device is connected to a metallized wiring layer via a bonding wire. A semiconductor device as a final product by sealing a semiconductor integrated circuit device hermetically to the body upper surface is attached a metallic lid container made of an insulating substrate and a metal lid.

[0003] The above-mentioned insulating substrate has a metal seal ring made of Kovar metal or 42 alloy on its upper surface joined to a metallized metal layer previously attached to the upper surface of the insulating substrate via a brazing material such as silver brazing. The metal lid is attached to the insulating base by welding the metal lid to the metal seal ring by a seam welding method or the like.

In the conventional package for accommodating a semiconductor element, an external lead terminal and a metal seal ring are usually joined to an insulating base via a brazing material having the same melting point. Specifically, the external lead terminal is insulated. A brazing material that is accurately aligned and brazed to a metallized wiring layer provided on a base, and then brazes the external lead terminals to a metallized metal layer in which a metal sealing is applied to an upper surface of an insulating base; And brazing using the same brazing material.

[0005]

However, in this conventional package for housing a semiconductor element, since the external lead terminals and the metal seal ring are joined to the insulating base via a brazing material having the same melting point, the external leads are not connected. After the terminals are accurately aligned with the metallized wiring layer provided on the insulating base and brazed and joined, when the metal seal ring is brazed and joined to the metallized metal layer adhered to the insulating base,
The brazing material joining the external lead terminals to the insulating base is melted by heat when brazing and joining the metal sealing, and the external lead terminals come off the metallized wiring layer,
There is a drawback that the semiconductor integrated circuit element contained therein is difficult to be connected accurately and reliably to an external electric circuit because the semiconductor integrated circuit element comes into contact with an adjacent metallized wiring layer while being shifted from a predetermined position. Was.

[0006]

According to the present invention, there is provided a package for housing a semiconductor element comprising an insulating base and a metal lid, wherein an external lead terminal is joined to the insulating base via a first brazing material. Further, the present invention is characterized in that the metal seal ring is joined via a second brazing material having a lower melting point than the first brazing material.

[0007]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing one embodiment of a package for housing a semiconductor device according to the present invention, wherein 1 is an insulating base, and 2 is a metal lid. The insulating base 1 and the metal lid 2 constitute a container 3 for housing the semiconductor integrated circuit element 4.

The insulating substrate 1 is made of an electrically insulating material such as alumina ceramics, and has a stepped recess A for accommodating the semiconductor integrated circuit element 4 at the center of the upper surface thereof. The integrated circuit element 4 is attached via an adhesive.

The insulating substrate 1 is made of, for example, alumina (Al ₂ O
₃ ), silica (SiO ₂ ), magnesia (MgO), calcia (C
aO) or the like to a raw material powder, an appropriate organic solvent and a solvent are added and mixed to form a slurry, and this is formed into a ceramic green sheet (ceramic green sheet) by employing a doctor blade method. The green sheet is manufactured by subjecting the green sheet to appropriate punching, laminating a plurality of sheets, and firing at a high temperature of about 1600 ° C.

A large number of metallized wiring layers 5 are formed on the insulating base 1 from the stepped upper surface of the recess A to the outside of the container 3. Each electrode of the semiconductor integrated circuit element 4 is connected via a bonding wire 6, and an external lead terminal 7 connected to an external electric circuit is joined to a portion led out of the container 3.

Incidentally, a plating metal layer made of nickel is formed on the surface of the metallized wiring layer 5 to which the external lead terminals 7 are bonded so that the external lead terminals 7 can be bonded firmly.
To 3.0 μm.

The metallized wiring layer 5 is made of tungsten,
A metal paste obtained by adding a suitable organic solvent and a solvent to the high melting point metal powder such as molybdenum, manganese or the like, and mixing the resulting metal paste on a ceramic green sheet serving as an insulating substrate 1 by a conventionally known screen printing method or the like. Is formed so as to be led out of the container 3 from the stepped upper surface of the concave portion A of the insulating substrate 1 by printing.

An external lead terminal 7 is joined to the metallized wiring layer 5 via a first brazing material 8, and the external lead terminal 7 is a semiconductor integrated circuit element housed therein.
4 is connected to an external electric circuit, and the external lead terminal 7 is connected to the external electric circuit, whereby the semiconductor integrated circuit element 4 accommodated therein is connected via the metallized wiring layer 5 and the external lead terminal 7. It will be electrically connected to an external electric circuit.

The external lead terminals 7 are arranged on the metallized wiring layer 5 of the insulating base 1 with a first brazing material 8 interposed therebetween, so that the external lead terminals 7 and the metallized wiring layer 5 are accurately aligned. After that, the first brazing material 8 is heated and melted to be accurately and surely joined to a predetermined position of the metallized wiring layer 5.

The external lead terminal 7 is made of Kovar metal.
(Fe-Ni-Co alloy) and 42 alloy (Fe-Ni alloy) and other metals. It is formed in a plate shape.

The first brazing material 8 for joining the external lead terminals 7 to the metallized wiring layer 5 formed on the insulating substrate 1 is made of a high melting point brazing material having a melting point of about 850 ° C. %, 15.0% by weight of copper brazing material is used.

The melting point of the first brazing material 8 is higher than the melting point of the second brazing material 11 for joining the metal seal ring 10 to the insulating base 1 to be described later.
After the external lead terminals 7 are brazed to the first metallized wiring layer 5 via the first brazing material 8, the metal seal ring 10 is brazed to the insulating base 1 via the second brazing material 11. Even if it is performed, the first brazing material 8 is not softened and melted by the heat of heating and melting the second brazing material 11, and the external lead terminals 7 are accurately and reliably joined to the predetermined metallized wiring layer 5. Can be kept.

A metallized metal layer 9 is also formed on the insulating substrate 1 on the upper surface thereof. A metal seal ring 10 is further provided on the metallized metal layer 9 with a second brazing material 11.
Are joined through.

The metallized metal layer 9 functions as a base metal when the metal sealing 10 is joined to the upper surface of the insulating substrate 1, and is formed of a high melting point metal powder such as tungsten or molybdenum.

The metallized metal layer 9 is formed by applying a metal paste obtained by adding an organic solvent and a solvent to a high melting point metal powder such as tagustene or the like on a ceramic green sheet serving as the insulating substrate 1 by a conventionally known screen printing method or the like. By printing and applying, it is adhered and formed on the upper surface of the insulating base 1.

Further, on the surface of the metallized metal layer 9, a plating metal made of nickel is layered to a thickness of 1.0 to 3.0 μm to firmly join the metal seal ring 10.

Further, a metal seal ring 10 joined to the metallized metal layer 9 acts as a base metal member when attaching the metal lid 2 to the insulating base 1, and the metal seal ring 10 is attached to the metal seal ring 10. The metal cover 2 is welded to the metal cover 2 by a well-known seam welding method or the like so that the metal cover 2 is insulated.
Mounted on top.

The metal seal ring 10 is provided on the insulating substrate 1.
A metal seal ring 10 is placed on the metallized metal layer 9 with a second brazing material 11 interposed therebetween, and then the second brazing material 11 is heated and melted to form a metallized metal layer.
9 and soldered to the predetermined position.

The metal seal ring 10 is made of a metal such as Kovar metal or 42 alloy, and a predetermined frame is formed by using an ingot (lumps) of Kovar metal or the like by using a conventionally known rolling method and punching method. Shape (ring shape)
Formed.

Further, the metal sealing 10 is attached to the insulating base 1.
The second brazing material 11 to be joined to the metallized metal layer 9 formed on the upper surface of the substrate is made of a low melting point brazing material having a melting point of about 780 ° C. For example, a brazing material of 72.0% by weight of silver and 28.0% by weight of copper is used. Is done.

The melting point of the second brazing material 11 is an insulating substrate.
1 is the first brazing material 8 joining the external lead terminals 7
Lower than the melting point of the metallized metal layer of the insulating substrate 1.
When a metal sealing 10 is brazed to the metallization wiring layer 5 of the insulating base 1 via the second brazing material 11, the first brazing material 8 bonding the external lead terminals 7 to the metallized wiring layer 5 of the insulating base 1
Even if heat for heating and melting the second brazing material 11 is applied, the first brazing material 8 does not soften and melt at all due to its high melting point. As a result, the external lead terminals 7 It is possible to join the layer 5 accurately and reliably.

Thus, according to the semiconductor device housing package of the present invention, the semiconductor integrated circuit device 4 is attached to the bottom surface of the concave portion A of the insulating base 1 via an adhesive, and each electrode of the semiconductor integrated circuit device 4 is metallized wiring. The metal cover 2 is electrically connected to the layer 5 via bonding wires 6 and then welded to the metal seal ring 10 bonded to the upper surface of the insulating base 1 by a seam welding method or the like. A semiconductor device as a product is obtained by hermetically sealing the inside.

It should be noted that the present invention is not limited to the above-described embodiment, and various changes can be made without departing from the gist of the present invention.
Each of the exposed surfaces of the external lead terminal 7, the metallized metal layer 9, and the metal seal ring 10 is plated with a highly conductive metal such as nickel or gold, which is excellent in corrosion resistance, by plating.
When the metallized wiring layer 5, the external lead terminal 7, the metallized metal layer 9, and the metal seal ring 10 are effectively prevented from being oxidized and corroded, the external lead terminal 7 and the external electric The connection with the circuit and the connection between the metallized wiring layer 5 and the bonding wire 6 become extremely strong. Therefore, the exposed surfaces of the metallized wiring layer 5, the external lead terminals 7, the metallized metal layer 9, and the metallic seal ring 10 should be plated with nickel, gold, or the like to a thickness of 1.0 to 20.0 μm by plating. Is preferred.

[0029]

According to the semiconductor device storage package of the present invention, the melting point of the brazing material for joining the external lead terminals to the insulating base is higher than the melting point of the brazing material for joining the metal seal ring to the insulating base. Therefore, when joining the metal seal ring to the insulating base to which the external lead terminal is joined, the external lead terminal is joined to the insulating base and the brazing material is not softened and melted at all. It is possible to accurately and surely join the metallized wiring layer adhered to the insulating substrate, and to accurately and reliably electrically connect the semiconductor integrated circuit element contained therein to a predetermined external electric circuit. Become.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating an embodiment of a package for housing a semiconductor device according to the present invention;

[Description of Signs] 1... Insulating base 2... Metal lid 5... Metallized wiring layer 7... External lead terminals 8. ..Metalized metal layer 10 ... Metal seal ring 11 ... Second brazing material

Claims (1)

(57) [Scope of request for utility model registration] 1. A package for accommodating a semiconductor element comprising an insulating base and a metal lid, wherein an external lead terminal is joined to the insulating base via a first brazing material, and a metal seal ring is provided. A package for housing a semiconductor element, wherein the package is joined via a second brazing material having a lower melting point than the first brazing material.