JP3318453B2 - Electronic component storage package - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for storing electronic components such as surface acoustic wave devices and semiconductor devices in an airtight manner.

[0002]

2. Description of the Related Art Conventionally, an electronic component housing package for housing an electronic component, for example, a surface acoustic wave element, is usually made of an electrically insulating material such as an aluminum oxide sintered body, and has an elastic surface substantially at the center of its upper surface. An insulating base having a mounting portion on which the wave element is mounted, and an electrically insulating material such as an aluminum oxide sintered body, which is attached to an upper surface of the insulating base so as to surround the mounting portion on which the surface acoustic wave element is mounted. And a plurality of insulating frames derived from the inside to the outside of the insulating frame and made of a high melting point metal powder such as tungsten, molybdenum, or manganese for electrically connecting the surface acoustic wave element to an external electric circuit. And a cover made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy. The wave element is bonded and fixed with an adhesive, and the electrodes of the surface acoustic wave element are connected to the metallized wiring layer via bonding wires. Thereafter, a metal lid is welded to the upper surface of the insulating frame to form an insulating substrate. The surface acoustic wave element is hermetically accommodated inside a container formed of a metal frame, an insulating frame, and a metal lid, thereby providing a surface acoustic wave device as a final product.

In the conventional package for storing electronic parts, a metal frame made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy is usually soldered to the upper surface of the insulating frame in advance. A metal lid having a nickel plating layer on the surface is placed on top of the metal frame, and the nickel plating on the surface of the metal lid is melted at the time of welding, and the metal frame is formed by molten nickel plating. By joining the body and the metal lid, the metal lid is attached to the upper surface of the insulating frame, whereby the container consisting of the insulating base, the insulating frame and the metal lid is hermetically sealed. You.

[0004] In addition, the metal frame is brazed to the insulating frame by first forming a metallized metal layer made of a high melting point metal powder such as tungsten, molybdenum or manganese on the upper surface of the insulating frame by a known screen printing method or the like. Then, a brazing material such as silver brazing and a metal frame are sequentially placed on the frame-shaped metallized metal layer, and finally a temperature of about 800 ° C. is applied to the brazing material. Is applied and the brazing material is heated and melted.

[0005] Further, the nickel plating layer applied to the surface of the metal lid is applied to a predetermined thickness on the surface of the metal lid by employing a conventionally known electrolytic plating method or electroless plating method. .

[0006]

However, recently,
As electronic devices have been rapidly reduced in size, electronic component storage packages have also been required to be reduced in size, and the thickness of the insulating frame has been reduced, and the electronic device has been attached to the surface of a metal lid. Nickel plating layer has a melting temperature of 1100 ℃ ~ 1400 ℃
And melting the nickel-plated layer adhered to the surface of the metal lid by welding, and joining the metal frame and the metal lid with the molten nickel-plated layer to form an insulating base. When a surface acoustic wave element or the like is hermetically accommodated inside a container formed of an insulating frame and a metal lid, cracks are generated in the insulating frame due to heat shock when the metal lid is welded to the metal frame. As a result, the hermetic seal inside the container is broken, and the surface acoustic wave element or the like accommodated in the container cannot be normally and stably operated for a long period of time.

[0007]

SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and has as its object to complete the hermetic sealing of the inside of a container and to allow the electronic components housed therein to operate normally and stably for a long period of time. It is an object of the present invention to provide a package for storing electronic components.

[0008]

According to the present invention, there is provided an insulating substrate having a mounting portion on which an electronic component is mounted on an upper surface, and an insulating substrate mounted on the upper surface of the insulating substrate so as to surround the mounting portion on which the electronic component is mounted. An insulating frame, a frame-shaped metallized metal layer attached to the upper surface of the insulating frame, a metal frame brazed to the frame-shaped metalized metal layer, and welded to the upper surface of the metal frame. An electronic component storage package comprising: a metal lid having a melting point of 11 on the surface.
A nickel plating layer as high as 00 to 1400 ° C. and a nickel plating layer with a melting point as low as 950 ° C. or less are sequentially applied, and only the nickel plating layer with a melting point as low as 950 ° C. or less is melted and joined to the metal frame. It is characterized by that.

Further, the present invention is characterized in that the nickel plating layer having a low melting point of 950 ° C. or less contains 9.0 to 12.0% by weight of phosphorus therein.

[0010]

According to the electronic component storage package of the present invention,
Since a nickel plating layer having a high melting point and a nickel plating layer having a melting point as low as 950 ° C. or less were sequentially applied to the surface of the metal lid, the metal frame and the metal lid were joined by welding, and the insulating base and When housing electronic components such as surface acoustic wave elements in an airtight manner inside a container consisting of an insulating frame and a metal lid
A large thermal shock is not applied to the insulating frame, and no crack is generated in the insulating frame.As a result, the hermetic sealing inside the container is completed, and the surface acoustic wave element or the like housed inside the container can be used for a long time. For normal and stable operation.

[0011]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. FIG. 1 shows an embodiment of an electronic component storage package according to the present invention, in which 1 is an insulating base, 2 is an insulating frame, and 3 is a metal lid. The insulating base 1, the insulating frame 2, and the metal lid 3 constitute a container for housing an electronic component 4 such as a surface acoustic wave device.

The insulating substrate 1 is made of a sintered body of aluminum oxide, a sintered body of mullite, a sintered body of aluminum nitride, a sintered body of silicon carbide, a sintered body of glass ceramic, or the like. And a mounting portion 1a on which the electronic component 4 is mounted. The mounting portion 1a has an electronic component such as a surface acoustic wave element.
4 is mounted and fixed via an adhesive.

When the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, a suitable organic binder, a plasticizer, and a solvent are added to a raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide. The slurry is formed, and the slurry is formed into a ceramic green sheet (ceramic green sheet) by employing a doctor blade method or a calendar roll method. Thereafter, the ceramic green sheet is subjected to an appropriate punching process and It is manufactured by stacking a plurality of sheets and firing at a temperature of about 1600 ° C.

A plurality of metallized wiring layers 5 extending from the periphery of the mounting portion 1a on which the electronic component 4 is mounted to the bottom surface via the side surface are formed on the insulating base 1, and are formed around the electronic component mounting portion 1a. Each electrode of the electronic component 4 is electrically connected to one end of the located metallized wiring layer 5 via a bonding wire 6, and an external electric circuit is provided with a brazing material such as solder at a portion led out to the bottom surface of the insulating base 1. Are electrically connected via The metallized wiring layer 5 formed on the insulating base 1 is made of a high melting point metal powder such as tungsten, molybdenum, manganese, etc., and the metallized wiring layer 5 electrically connects each electrode of the electronic component 4 housed in the container to an external electric circuit. Acts to connect.

The metallized wiring layer 5 is made of, for example, a metal paste obtained by adding a suitable organic binder, a plasticizer, and a solvent to a refractory metal powder such as tungsten and mixing it with an insulating substrate.
By printing and applying a predetermined pattern on the ceramic green sheet to be 1 in advance by a conventionally known screen printing method, the ceramic green sheet is adhered and formed at a predetermined position on the insulating substrate 1 in a predetermined pattern.

The metallized wiring layer 5 is formed by plating a metal having excellent corrosion resistance such as nickel and gold and having good wettability with a brazing material to a thickness of 1.0 to 20.0 μm on the exposed surface by plating. By doing so, oxidation corrosion of the metallized wiring layer 5 can be effectively prevented, and the connection between the metallized wiring layer 5 and the bonding wire 6 and the connection between the metallized wiring layer 5 and the external electric circuit via a brazing material are firmly strengthened. Can be made. Therefore, the metallized wiring layer
The surface of 5 is made of a metal with excellent corrosion resistance, such as nickel and gold, and a good wettability with brazing material, 1.0 to 20.0μ by plating.
It is preferable to coat the layer with a thickness of m.

An insulating frame 2 is attached to the upper surface of the insulating base 1 so as to surround the mounting portion 1a of the electronic component, and is formed by the inside of the insulating frame 2 and the upper surface of the insulating base 1. The space to be used becomes a space for accommodating the electronic component 4.

The insulating frame 2 is made of the same electrical insulating material as the insulating base 1, specifically, an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, a silicon carbide sintered body, A frame-shaped ceramic green sheet (green ceramic sheet) made of a glass-ceramic sintered body or the like and obtained by the same method as that for manufacturing the insulating base 1 is placed on the ceramic green sheet serving as the insulating base 1 in advance. By doing so, they are integrally attached on the insulating base 1.

The insulating frame 2 is further provided with a frame-shaped metallized metal layer 7 on its upper surface, and a metal frame 8 is brazed to the metallized metal layer 7 with a brazing material. .

The frame-shaped metallized metal layer 7 on the upper surface of the insulating frame 2 is made of a high melting point metal powder such as tungsten, molybdenum, manganese or the like.
8 acts as a base metal layer when brazing to the insulating frame 2.

The frame-shaped metallized metal layer 7 is made of an organic binder suitable for a high melting point metal powder such as tungsten.
A metal paste obtained by adding and mixing a plasticizer and a solvent is preliminarily printed and applied to a predetermined thickness by a conventionally known screen printing method on a frame-shaped ceramic green sheet serving as the insulating frame 2 to thereby form the insulating frame 2. Is formed on the upper surface of.

The metal frame 8 brazed to the metallized metal layer 7 via a brazing material is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy.
The metal frame 8 functions as a base metal member when attaching a metal lid 3 described later to the insulating frame 2.

The metal frame 8 made of a metal material such as the above-mentioned iron-nickel-cobalt alloy or iron-nickel alloy is
An ingot (a lump) such as a nickel-cobalt alloy is manufactured into a predetermined frame shape by employing a conventionally known metal working method such as a rolling method or a punching method.

The brazing material to be brazed to the frame-shaped metallized metal layer 7 in which the metal frame 8 is attached to the insulating frame 2 is preferably a silver-copper alloy (silver brazing) or a gold-silver alloy. Used for

A metal lid 3 made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy is attached to the upper portion of the metal frame 8 by welding such as a seam welding method. An electronic component 4 such as a surface acoustic wave device is placed inside a container comprising a base 1, an insulating frame 2 and a metal
Are housed in an airtight manner.

On the surface of the metal lid 3, a nickel plating layer 3a having a high melting point and a nickel plating layer 3b having a low melting point of 950 ° C. or less are sequentially applied on the surface, and the nickel plating layer 3a having a high melting point is formed of a metal. When the metal lid 3 is attached to the frame 8 by welding, the metal lid 8 acts to strengthen the joining between the metal frame 8 and the metal lid 3 by disabling its melting, and has a melting point of 950 ° C. or less. And low nickel plating layer 3b is metal frame 8
When the metal cover 3 is attached to the metal frame 3 by welding, it melts and acts to join the metal frame 8 and the metal cover 3. In this case, the molten nickel plating layer 3b having a low melting point of 950 ° C. or less is firmly attached to the metal lid 3 due to the presence of the nickel plating layer 3a having a high melting point under the nickel plating layer 3b. And the metal frame 8 are firmly joined. Further, since the melting temperature of the nickel plating layer 3b having a low melting point of 950 ° C. or less is low by welding, a large thermal shock is not applied to the insulating frame 2 during welding, and as a result, cracks occur in the insulating frame 2 In this way, the hermetic sealing of the inside of the container is completed, and the electronic components 4 housed inside the container can be operated normally and stably for a long period of time.

The nickel plating layer 3a having a high melting point is applied to the surface of the metal cover 3 to a predetermined thickness (2.0 to 6.0 μm) by, for example, a conventionally well-known electrolytic plating method.
The nickel plating layer 3b as low as 50 ° C. or less is applied to the surface of the nickel plating layer 3a having a high melting point to a predetermined thickness (0.5 to 3.0 μm) by, for example, a conventionally known electroless plating method.

The nickel plating layer 3b having a melting point as low as 950 ° C. or less is formed by adding 9.0 to 12.0% by weight of phosphorus to the nickel plating layer. When a nickel plating layer 3b having a low melting point of 950 ° C. or less is applied to the surface of the layer 3a by electroless plating, a predetermined amount of phosphorus is added to a plating solution in advance.

When the nickel plating layer 3b having a low melting point of 950 ° C. or less is formed by adding phosphorus to the nickel plating layer, the phosphorus content is less than 9.0% by weight.
Otherwise, if it exceeds 12.0% by weight, the melting point becomes too high to use. Therefore, when the nickel plating layer 3b having a melting point as low as 950 ° C. or lower is formed by adding phosphorus to the nickel plating layer, the phosphorus content is specified to be 9.0 to 12.0% by weight.

If the thickness of the nickel plating layer 3b having a low melting point of 950 ° C. or less is less than 0.5 μm, it tends to be difficult to firmly join the metal lid 3 to the metal frame 8; On the other hand, if it exceeds 3.0 μm, the electric resistance of the nickel plating layer 3b, whose melting point is as low as 950 ° C. or less, tends to be low, and the welding efficiency tends to be poor. Therefore, the nickel plating layer 3b whose melting point is as low as 950 ° C. or less is
In order to efficiently and firmly join the metal frame 8 to the metal frame 8, the thickness thereof is preferably set to 0.5 μm to 3.0 μm.

Thus, according to the electronic component storage package described above, the electronic component 4 such as a surface acoustic wave element is bonded and fixed to the mounting portion 1a of the electronic component on the insulating base 1 with the adhesive, and the electronic component 4 is mounted. Each electrode is electrically connected to the metallized wiring layer 5 via the bonding wire 6, and thereafter,
Metal cover 8 brazed to the upper surface of insulating frame 2
3 is welded by a seam welding method or the like, and the electronic component 4 is hermetically sealed inside a container comprising the insulating base 1, the insulating frame 2 and the metal lid 3, so that a surface acoustic wave device or the like as a final product is obtained. Becomes

The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention.

[0033]

According to the electronic component housing package of the present invention, the surface of the metal lid has a melting point of 1100 to 1400 ° C.
A nickel plating layer having a high melting point and a nickel plating layer having a melting point as low as 950 ° C. or less are sequentially applied, and only the nickel plating layer having a melting point as low as 950 ° C. or less is melted to join the metal lid to the metal frame. From the above, when the metal frame and the metal lid are joined by welding, and when electronic components such as surface acoustic wave elements are hermetically accommodated inside a container including the insulating base, the insulating frame and the metal lid, A large thermal shock is not applied to the insulating frame, and no crack is generated in the insulating frame.As a result, the hermetic sealing inside the container is completed, and the surface acoustic wave element or the like housed inside the container can be used for a long time. For normal and stable operation.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing an embodiment of an electronic component storage package according to the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Insulating base 1a ... Mounting part of electronic components 2 ... Insulating frame 3 ... Metal lid 3a ... High melting point Nickel plating layer 3b Nickel plating layer with melting point as low as 950 ° C. or less 4 Electronic component 5 Metallized wiring layer 7 Metallized metal layer 8 ..... Metal frame

Claims (2)

(57) [Claims] An insulating base having a mounting portion on which an electronic component is mounted on an upper surface; an insulating frame attached to the upper surface of the insulating base so as to surround the mounting portion on which the electronic component is mounted; a frame-shaped metallized metal layer deposited on the upper surface of the insulating frame, is brazed to the frame-shaped metallized metal layer
And a metal lid welded to the upper surface of the metal frame, wherein the metal lid has a melting point of 1100 to 1400 ° C. on the surface. A nickel plating layer and a nickel plating layer having a melting point as low as 950 ° C. or less are sequentially deposited, and the melting point is 950 ° C. or less.
Only the lower and lower nickel plating layers are melted to
A package for storing electronic components, which is joined to a body . 2. The electronic component storage package according to claim 1, wherein the nickel plating layer having a melting point as low as 950 ° C. or less contains 9.0 to 12.0% by weight of phosphorus therein.