JPH0337735B2 - - Google Patents
Info
- Publication number
- JPH0337735B2 JPH0337735B2 JP59075885A JP7588584A JPH0337735B2 JP H0337735 B2 JPH0337735 B2 JP H0337735B2 JP 59075885 A JP59075885 A JP 59075885A JP 7588584 A JP7588584 A JP 7588584A JP H0337735 B2 JPH0337735 B2 JP H0337735B2
- Authority
- JP
- Japan
- Prior art keywords
- collector
- emitter
- base
- conductivity type
- potential barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005036 potential barrier Methods 0.000 claims description 55
- 239000004065 semiconductor Substances 0.000 claims description 46
- 230000000694 effects Effects 0.000 claims description 16
- 230000005641 tunneling Effects 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 230000007704 transition Effects 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 description 22
- 238000010586 diagram Methods 0.000 description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 15
- 239000010931 gold Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 9
- 230000003321 amplification Effects 0.000 description 8
- 238000003199 nucleic acid amplification method Methods 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005640 de Broglie wave Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59075885A JPS60219766A (ja) | 1984-04-17 | 1984-04-17 | 半導体装置 |
| CA000478704A CA1237824A (en) | 1984-04-17 | 1985-04-10 | Resonant tunneling semiconductor device |
| DE8585400744T DE3583302D1 (de) | 1984-04-17 | 1985-04-16 | Halbleiteranordnung. |
| EP85400744A EP0159273B1 (en) | 1984-04-17 | 1985-04-16 | Semiconductor device |
| KR1019850002594A KR900004466B1 (ko) | 1984-04-17 | 1985-04-17 | 반도체 장치 |
| US07/059,216 US4958201A (en) | 1984-04-17 | 1987-06-05 | Resonant tunneling minority carrier transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59075885A JPS60219766A (ja) | 1984-04-17 | 1984-04-17 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60219766A JPS60219766A (ja) | 1985-11-02 |
| JPH0337735B2 true JPH0337735B2 (ko) | 1991-06-06 |
Family
ID=13589189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59075885A Granted JPS60219766A (ja) | 1984-04-17 | 1984-04-17 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60219766A (ko) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6154665A (ja) * | 1984-08-24 | 1986-03-18 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置及びその製造方法 |
| US4760579A (en) * | 1986-07-01 | 1988-07-26 | Hughes Aircraft Company | Quantum well laser with charge carrier density enhancement |
| JPS6331165A (ja) * | 1986-07-18 | 1988-02-09 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 共鳴トンネリング半導体デバイス |
| JPS63140570A (ja) * | 1986-12-03 | 1988-06-13 | Hitachi Ltd | 半導体装置 |
| JPH0795675B2 (ja) * | 1987-02-14 | 1995-10-11 | 富士通株式会社 | 比較回路 |
| JPH07101817B2 (ja) * | 1987-03-06 | 1995-11-01 | 富士通株式会社 | 半導体装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52105785A (en) * | 1976-02-27 | 1977-09-05 | Max Planck Gesellschaft | Multiilayer semiconductor element |
| JPS583277A (ja) * | 1981-06-30 | 1983-01-10 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | 半導体共鳴トンネル３極装置 |
-
1984
- 1984-04-17 JP JP59075885A patent/JPS60219766A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52105785A (en) * | 1976-02-27 | 1977-09-05 | Max Planck Gesellschaft | Multiilayer semiconductor element |
| JPS583277A (ja) * | 1981-06-30 | 1983-01-10 | インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン | 半導体共鳴トンネル３極装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60219766A (ja) | 1985-11-02 |
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