[go: up one dir, main page]

JPH0337737B2 - - Google Patents

Info

Publication number
JPH0337737B2
JPH0337737B2 JP59109436A JP10943684A JPH0337737B2 JP H0337737 B2 JPH0337737 B2 JP H0337737B2 JP 59109436 A JP59109436 A JP 59109436A JP 10943684 A JP10943684 A JP 10943684A JP H0337737 B2 JPH0337737 B2 JP H0337737B2
Authority
JP
Japan
Prior art keywords
base
emitter
collector
conductivity type
potential barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59109436A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60254657A (ja
Inventor
Takashi Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59109436A priority Critical patent/JPS60254657A/ja
Priority to CA000478704A priority patent/CA1237824A/en
Priority to DE8585400744T priority patent/DE3583302D1/de
Priority to EP85400744A priority patent/EP0159273B1/en
Priority to KR1019850002594A priority patent/KR900004466B1/ko
Publication of JPS60254657A publication Critical patent/JPS60254657A/ja
Priority to US07/059,216 priority patent/US4958201A/en
Publication of JPH0337737B2 publication Critical patent/JPH0337737B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Bipolar Transistors (AREA)
JP59109436A 1984-04-17 1984-05-31 半導体装置 Granted JPS60254657A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP59109436A JPS60254657A (ja) 1984-05-31 1984-05-31 半導体装置
CA000478704A CA1237824A (en) 1984-04-17 1985-04-10 Resonant tunneling semiconductor device
DE8585400744T DE3583302D1 (de) 1984-04-17 1985-04-16 Halbleiteranordnung.
EP85400744A EP0159273B1 (en) 1984-04-17 1985-04-16 Semiconductor device
KR1019850002594A KR900004466B1 (ko) 1984-04-17 1985-04-17 반도체 장치
US07/059,216 US4958201A (en) 1984-04-17 1987-06-05 Resonant tunneling minority carrier transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59109436A JPS60254657A (ja) 1984-05-31 1984-05-31 半導体装置

Publications (2)

Publication Number Publication Date
JPS60254657A JPS60254657A (ja) 1985-12-16
JPH0337737B2 true JPH0337737B2 (ko) 1991-06-06

Family

ID=14510195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59109436A Granted JPS60254657A (ja) 1984-04-17 1984-05-31 半導体装置

Country Status (1)

Country Link
JP (1) JPS60254657A (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62229878A (ja) * 1986-03-04 1987-10-08 Fujitsu Ltd 高速半導体装置
JPH0834213B2 (ja) * 1986-03-18 1996-03-29 富士通株式会社 共鳴トンネル半導体装置
JPS6331165A (ja) * 1986-07-18 1988-02-09 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 共鳴トンネリング半導体デバイス
JPH0795675B2 (ja) * 1987-02-14 1995-10-11 富士通株式会社 比較回路
JP2755233B2 (ja) * 1995-10-27 1998-05-20 日本電気株式会社 高注入効率半導体接合

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
JPS52105785A (en) * 1976-02-27 1977-09-05 Max Planck Gesellschaft Multiilayer semiconductor element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
JPS52105785A (en) * 1976-02-27 1977-09-05 Max Planck Gesellschaft Multiilayer semiconductor element

Also Published As

Publication number Publication date
JPS60254657A (ja) 1985-12-16

Similar Documents

Publication Publication Date Title
KR900004466B1 (ko) 반도체 장치
JP2773487B2 (ja) トンネルトランジスタ
JP2604349B2 (ja) 半導体装置
JPS63140570A (ja) 半導体装置
JP2689057B2 (ja) 静電誘導型半導体装置
JPH0337737B2 (ko)
JPH0312769B2 (ko)
US4786957A (en) Negative differential resistance element
JP3301888B2 (ja) 電界効果型半導体装置
WO1987000692A1 (fr) Dispositif a semi-conducteurs
JPS60219766A (ja) 半導体装置
JP2701583B2 (ja) トンネルトランジスタ及びその製造方法
JPS6052060A (ja) 電界効果トランジスタ
JPS59181069A (ja) 半導体装置
JP2800675B2 (ja) トンネルトランジスタ
JPH0795598B2 (ja) 半導体装置
JPH088360B2 (ja) トンネルトランジスタおよびその製造方法
JP2513118B2 (ja) トンネルトランジスタおよびその製造方法
JPH0831471B2 (ja) 共鳴トンネリングトランジスタ
JP2778447B2 (ja) トンネルトランジスタおよびその製造方法
JP3493205B2 (ja) 電界効果トランジスタおよびその製造方法
JP2510864B2 (ja) 電界効果半導体装置
JPH04251934A (ja) 半導体装置
JPS6255316B2 (ko)
JPH0337736B2 (ko)