JPH0319154A - Stamper - Google Patents
StamperInfo
- Publication number
- JPH0319154A JPH0319154A JP15397689A JP15397689A JPH0319154A JP H0319154 A JPH0319154 A JP H0319154A JP 15397689 A JP15397689 A JP 15397689A JP 15397689 A JP15397689 A JP 15397689A JP H0319154 A JPH0319154 A JP H0319154A
- Authority
- JP
- Japan
- Prior art keywords
- stamper
- sol
- gel
- diamond
- work
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 24
- 230000003014 reinforcing effect Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 13
- 239000000463 material Substances 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 4
- 238000005299 abrasion Methods 0.000 abstract description 2
- 230000003578 releasing effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 17
- 239000011521 glass Substances 0.000 description 16
- 238000007796 conventional method Methods 0.000 description 10
- 230000006866 deterioration Effects 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 238000003980 solgel method Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- 235000019441 ethanol Nutrition 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005323 electroforming Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910005987 Ge3N4 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/17—Component parts, details or accessories; Auxiliary operations
- B29C45/26—Moulds
- B29C45/263—Moulds with mould wall parts provided with fine grooves or impressions, e.g. for record discs
- B29C45/2632—Stampers; Mountings thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2907/00—Use of elements other than metals as mould material
- B29K2907/04—Carbon
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Laminated Bodies (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は光ディスク用スタンパに関し、特にゾルゲル法
を用いた光ディスク用ガラス基板作製のためのワークス
タンバに関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a stamper for optical discs, and particularly to a work stamper for producing a glass substrate for optical discs using a sol-gel method.
（従来の技術）
ゾルゲル法を用いた光ディスク用ガラス基板の作製プロ
セスについて説明スる。(Prior Art) A process for manufacturing a glass substrate for an optical disk using a sol-gel method will be explained.
まず、所望のデータに基づきガラス原盤にマスクライテ
ィングを行う。次に、ガラス原盤にＮｉのスパッタおよ
び電鋳処理を施すことにより、Ｎｉスタンパ（マスク）
をおこす。ついで、Ｎｉスタンバ（マスク）を型にして
再度電鋳処理を行い、Ｎｉスタンパ（マザー）を作製す
る。この様にして作製したＮｉスタンバ（マザー）を用
いて、射出成形あるいは２Ｐ戒形により樹脂膜のゾルゲ
ル用ワークスタンパを得ることが出来る。First, mask writing is performed on the glass master based on desired data. Next, by subjecting the glass master to Ni sputtering and electroforming, a Ni stamper (mask) is formed.
cause Next, electroforming is performed again using the Ni stamper (mask) as a mold to produce a Ni stamper (mother). Using the Ni stamper (mother) produced in this manner, a resin film sol-gel work stamper can be obtained by injection molding or 2P molding.
次に、ガラス基板上にスピンコート法により金属アルコ
レート、ポリエチレングリコール、塩酸を含むアルコー
ル溶液（ゾルゲル溶液）を塗布し、ゾルゲル層を形成す
る。先ほどのワークスタンパををこのゾルゲル面に押し
当て、微細なパターンを転写する。重ね合わせたまま一
次焼戒を行った後、ワークスタンパから離型した微細パ
ターン付きガラス基板を更に二次焼戒する。このような
プロセスを経て、光ディスク用ガラス基板を得ることが
出来る。Next, an alcohol solution (sol-gel solution) containing metal alcoholate, polyethylene glycol, and hydrochloric acid is applied onto the glass substrate by a spin coating method to form a sol-gel layer. Press the work stamper from earlier onto this sol-gel surface to transfer the fine pattern. After primary firing is performed while the substrates are overlapped, the finely patterned glass substrate released from the work stamper is further subjected to secondary firing. Through such a process, a glass substrate for an optical disc can be obtained.
（発明が解決しようとする課題）
先述したように、ゾルゲル用ワークスタンパを作製する
には、現状ではかなりのプロセスを必要とする。これは
ゾルゲル用ワークスタンパとして、直接Ｎｉスタンパ（
マスタ）が使用できないことによる。即ち、ゾルゲル層
とＮｉスタンパをそのまま密着させて一次焼或を行うと
、離型の際、ゾルゲル層の一部Ｎｉスタンパ面に付着し
、正確なパターン転写が出来ない。(Problems to be Solved by the Invention) As mentioned above, manufacturing a sol-gel work stamper currently requires a considerable number of processes. This is a direct Ni stamper (
master) is unavailable. That is, if primary baking is performed with the sol-gel layer and the Ni stamper in close contact with each other, a portion of the sol-gel layer will adhere to the surface of the Ni stamper when the mold is released, making it impossible to accurately transfer the pattern.
このため上述したような長いプロセスを採り入れている
が、特に微細なパターンを比較的大面積に渡って何度も
転写するので、歩留り、コストの面で問題となる。For this reason, a long process as described above is employed, but this poses problems in terms of yield and cost, as particularly fine patterns are transferred over a relatively large area many times.
本発明は、上述した問題を解決するゾルゲル用ワークス
タンパを提供することにある。An object of the present invention is to provide a sol-gel work stamper that solves the above-mentioned problems.
（課題を解決するための手段）
本発明によるスタンパは、微細なパターンを有するＮｉ
薄板の上に、ダイヤモンド状カーボン層を形成したこと
を特徴とする。また、Ｎｉ薄板とダイヤモンド状カーボ
ン層の間に付着強化層を形成したことを特徴とする。(Means for Solving the Problems) A stamper according to the present invention has a Ni stamper having a fine pattern.
It is characterized by a diamond-like carbon layer formed on a thin plate. Further, it is characterized in that an adhesion reinforcing layer is formed between the Ni thin plate and the diamond-like carbon layer.
（作用）
本発明によれば、ゾルゲル材料に対して離型性かつ耐磨
耗性のあるダイヤモンド状のカーボン膜でＮｉスタンパ
の表面処理を行うため、そのままゾルゲル用ワークスタ
ンパとして多数回繰り返して使用できる。このため、従
来のような煩雑なプロセスを経ることがなく、コスト歩
留りなどの面で有利である。(Function) According to the present invention, the surface of the Ni stamper is treated with a diamond-like carbon film that has releasability and abrasion resistance for the sol-gel material, so it can be used as it is as a work stamper for sol-gel many times. can. Therefore, there is no need for complicated processes as in the conventional method, which is advantageous in terms of cost yield and the like.
また、Ｎｉスタンバとカーボン膜との間に付着強化層を
導入することにより、より安定したゾルゲル転写を行う
ことが出来る。この付着強化層には各種の材料を用いる
ことができるが、ＳｉまたはＳｉの酸化物、窒化物、炭
化物、ＧｅまたはＧｅの酸化物、窒化物、もしくはＣｒ
， Ｔｉ， Ｚｒ， Ｃｏ， Ｃｕ， Ａｇ， Ａｌ，
Ｓｎ， Ｐｂなとの金属を単独あるいは組み合せて使
用できる。Further, by introducing an adhesion reinforcing layer between the Ni standber and the carbon film, more stable sol-gel transfer can be performed. Various materials can be used for this adhesion enhancing layer, including Si or Si oxides, nitrides, carbides, Ge or Ge oxides, nitrides, or Cr.
, Ti, Zr, Co, Cu, Ag, Al,
Metals such as Sn and Pb can be used alone or in combination.
（実施例）
以下、実施例に基づき詳細に説明する。第１図および第
２図は、本発明のスタンバの概略断面図である。本発明
のスタンパは、前記した通常の方法で作製されたＮｉス
タンパ（マスク）１上にダイヤモンド状カーボン膜２を
形成してなる。また第２図に示すように、Ｎｉスタンバ
（マスク）１とダイヤモンド状カーボン膜２の間に付着
強化層を導入することにより安定したゾルゲル転写を行
うことができる。(Example) Hereinafter, a detailed explanation will be given based on an example. 1 and 2 are schematic cross-sectional views of the stand bar of the present invention. The stamper of the present invention is formed by forming a diamond-like carbon film 2 on a Ni stamper (mask) 1 manufactured by the above-described conventional method. Further, as shown in FIG. 2, by introducing an adhesion reinforcing layer between the Ni standby (mask) 1 and the diamond-like carbon film 2, stable sol-gel transfer can be performed.
実施例１
通常の方法で作製されたＮｉスタンバ（マスク）１に、
ＣＨ４／Ｈ２混合ガスを用いたＤＣグロー放電ＣＶＤ法
により、ダイヤモンド状カーボン膜２を５００人威膜し
た。このようにして本発明によるゾルゲル用ワークスタ
ンバが作製できる。Example 1 In a Ni standby (mask) 1 prepared by a normal method,
A diamond-like carbon film 2 was deposited on 500 people using a DC glow discharge CVD method using a CH4/H2 mixed gas. In this way, the sol-gel work stand according to the present invention can be produced.
次に、ゾルゲル法を用いたガラス基板の作製方法につい
て述べる。Next, a method for manufacturing a glass substrate using the sol-gel method will be described.
ガラス基板上にテトラエトキシシラン、ポリエチレング
リコール、塩酸を含むエチルアルコール溶液をスビンコ
ート法により塗布し、ゾルゲル層を２０００〜３０００
人形成した。ついで、先ほどのワークスタンバを減圧下
重ね合わせて押圧する。そのままの状態で、１００°Ｃ
、１０分間の一次焼戒を行った。An ethyl alcohol solution containing tetraethoxysilane, polyethylene glycol, and hydrochloric acid is applied onto a glass substrate by the Subin coating method to form a sol-gel layer with a coating density of 2000 to 3000.
Formed a person. Next, the work stand bars from earlier are stacked and pressed together under reduced pressure. 100°C in the same state
, performed the first burning precept for 10 minutes.
その後、ガラス基板をワークスタンパより離型し、３５
０°Ｃ、１０分間の二次焼威を行い、所望の微細パター
ンを有するガラス基板を得た。After that, the glass substrate was released from the work stamper, and
Secondary baking was performed at 0°C for 10 minutes to obtain a glass substrate having a desired fine pattern.
本発明によるダイヤモンド状カーボン膜で被覆されたＮ
ｉスタンパでは、１００回以上ゾルゲル転写を行っても
、スタンパ面に傷が付くこともなく、また、ゾルゲル材
料の付着も認められなかった。そのため、良好な転写が
繰り返しで′きた。N coated with diamond-like carbon film according to the present invention
With the i-stamper, even when sol-gel transfer was performed more than 100 times, the stamper surface was not scratched, and no adhesion of sol-gel material was observed. Therefore, good transfer was repeatedly possible.
一方、通常の方法で作製されたＮｉスタンバをそのまま
用いた場合は、１０回程度の繰り返し使用で表面に傷が
付いた。また、ゾルゲル材料の付着も初期の段階から起
こり、スタンパの使用を繰り返すにつれて出来上りのゾ
ルゲル基板の欠陥が増加した。On the other hand, when a Ni standby produced by a conventional method was used as it was, the surface was scratched after repeated use about 10 times. In addition, adhesion of the sol-gel material occurred from an early stage, and as the stamper was repeatedly used, the number of defects in the finished sol-gel substrate increased.
実施例２
通常の方法で作製されたＮｉスタンパ（マスク）にスパ
ッタ法によりＳｉを１００人威膜した。ついで、このＳ
ｉ層上にＣＨ４／Ｈ２混合ガスを用いたＤＣグロー放電
ＣＶＤ法により、ダイヤモンド状カーボン膜を５０ＯＡ
戒膜した。このようにして本発明によるゾルゲル用ワー
クスタンバが作製できる。Example 2 A Ni stamper (mask) prepared by a conventional method was coated with Si by sputtering for 100 people. Next, this S
A diamond-like carbon film of 50 OA was deposited on the i-layer by DC glow discharge CVD using a CH4/H2 mixed gas.
I was angry. In this way, the sol-gel work stand according to the present invention can be produced.
次に、ゾルゲル法を用いたガラス基板の作製方法につい
て述べる。Next, a method for manufacturing a glass substrate using the sol-gel method will be described.
ガラス基板上にテトラエトキシシラン、ポリエチレング
リコール、塩酸を含むエチルアルコール溶液をスピンコ
ート法により塗布し、ゾルゲル層を２０００〜ａｏｏｏ
Ａ形成した。ついで、先ほどのワークスタンパを減圧下
で重ね合わせて押圧する。そのままの状態で、１００°
Ｃ、１０分間の一次焼戒を行った。その後、ガラス基板
をワークスタンパより離型し、３５０’Ｃ、１０分間の
二次焼戒を行い、所望の微細パターンを有するガラス基
板を得た。An ethyl alcohol solution containing tetraethoxysilane, polyethylene glycol, and hydrochloric acid is applied onto a glass substrate by spin coating to form a sol-gel layer with
A was formed. Next, the work stampers from earlier are pressed together under reduced pressure. 100° in the same state
C. Performed the first burning precept for 10 minutes. Thereafter, the glass substrate was released from the work stamper and subjected to secondary baking at 350'C for 10 minutes to obtain a glass substrate having a desired fine pattern.
本実施例によるダイヤモンド状カーボン膜で被覆された
Ｎｉスタンバでは、１００回以上ゾルゲル転写を行って
も、スタンパ面に傷が付くこともなく、また、ゾルゲル
材料の付着も認められなかった。In the Ni stamper coated with the diamond-like carbon film according to this example, even when sol-gel transfer was performed more than 100 times, the stamper surface was not scratched, and no sol-gel material was observed to adhere.
そのため、良好な転写が繰り返しできた。Therefore, good transfer could be repeated.
一方、通常の方法で作製されたＮｉスタンパをそのまま
用いた場合は、１０回程度の繰り返し使用で表面に傷が
付いた。また、ゾルゲル材料の付着も初期の段階から起
こり、スタンバの使用を繰り返すにつれて出来上りのゾ
ルゲル基板の欠陥が増加した。On the other hand, when a Ni stamper produced by a conventional method was used as it was, the surface was scratched after repeated use about 10 times. In addition, adhesion of the sol-gel material occurred from an early stage, and as the standber was repeatedly used, the number of defects in the finished sol-gel substrate increased.
実施例３
通常の方法で作製されたＮｉスタンパ（マスク）に、ス
バッタ法によりＳｉ０２を１ｏｏＡ戒膜した。ついで、
このＳｉ０２層上にＣＨ４／Ｈ２混合ガスを用いたＤＣ
グロー放電ＣＶＤ法により、ダイヤモンド状カーボン膜
を５０ＯＡ戒膜した。このようにして本発明によるゾル
ゲル用ワークスタンパが作製できる。Example 3 A 10A film of Si02 was applied to a Ni stamper (mask) prepared by a conventional method using a sputtering method. Then,
DC using CH4/H2 mixed gas on this Si02 layer
A 50 OA diamond-like carbon film was formed by a glow discharge CVD method. In this way, the sol-gel work stamper according to the present invention can be produced.
次に、ゾルゲル法を用いたガラス基板を実施例２と同様
に作製した。Next, a glass substrate was produced in the same manner as in Example 2 using the sol-gel method.
実施例によるダイヤモンド状カーボン膜で被覆されたＮ
ｉスタンパでは、１００回以上ゾルゲル転写を行っても
、スタンパ面に傷が付くこともなく、また、ゾルゲル材
料の付着も認められなかった。そのため、良好な転写が
繰り返しできた。N coated with diamond-like carbon film according to examples
With the i-stamper, even when sol-gel transfer was performed more than 100 times, the stamper surface was not scratched, and no adhesion of sol-gel material was observed. Therefore, good transfer could be repeated.
実施例４
実施例３のＳｉ０２の代わりにＳｉ３Ｎ４を用いて、実
施例３と同様にゾルゲル用ワークスタンパを作製した。Example 4 A sol-gel work stamper was produced in the same manner as in Example 3, using Si3N4 instead of Si02 in Example 3.
実施例１と同様にゾルゲル転写を行ったところ、１００
回以上繰り返し使用しても、転写バタンの劣化は認めら
れなかった。When sol-gel transfer was performed in the same manner as in Example 1, 100
No deterioration of the transfer button was observed even after repeated use.
実施例５
実施例３のＳｉ０２の代わりにＳｉＣを用いて、実施例
３と同様にゾルゲル用ワークスタンパを作製した。Example 5 A sol-gel work stamper was produced in the same manner as in Example 3, using SiC instead of Si02 in Example 3.
実施例３と同様にゾルゲル転写を行ったところ、１００
回以上繰り返し使用しても、転写バタンの劣化は認めら
れなかった。When sol-gel transfer was performed in the same manner as in Example 3, 100
No deterioration of the transfer button was observed even after repeated use.
実施例６
通常の方法で作製されたＮｉスタンパ（マスク）に、ス
バッタ法によりＧｅをｌＯＯＡ戒膜した。ついで、この
Ｇｅ層上にＣＨ４／Ｈ２混合ガスを用いたＤＣグリー放
電ＣＶＤ法により、ダイヤモンド状カーボン膜を５００
Ａ或膜した。このようにして本発明によるゾルゲル用ワ
ークスタンパが作製できる。Example 6 A Ni stamper (mask) prepared by a conventional method was coated with Ge using a sputtering method. Next, a diamond-like carbon film with a thickness of 500 nm was deposited on this Ge layer by the DC green discharge CVD method using a CH4/H2 mixed gas.
A was filmed. In this way, the sol-gel work stamper according to the present invention can be produced.
本実施例によるダイヤモンド状カーボン膜で被覆された
Ｎｉスタンバでは、１００回以上ゾルゲル転写を行って
も、スタンパ面に傷が付くこともなく、また、ゾルゲル
材料の付着も認められなかった。In the Ni stamper coated with the diamond-like carbon film according to this example, even when sol-gel transfer was performed more than 100 times, the stamper surface was not scratched, and no sol-gel material was observed to adhere.
そのため、良好な転写が繰り返しできた。Therefore, good transfer could be repeated.
実施例７
実施例６のＧｅの代わりにＧｅ０２を用いて、実施例６
と同様にゾルゲル用ワークスタンバを作製した。Example 7 Using Ge02 instead of Ge in Example 6, Example 6
A work stand for sol-gel was prepared in the same manner as above.
実施例２と同様にゾルゲル転写を行ったところ、１００
回以上繰り返し使用しても、転写パタンの劣化は認めら
れなかった。When sol-gel transfer was performed in the same manner as in Example 2, 100
No deterioration of the transferred pattern was observed even after repeated use several times.
実施例８
実施例６のＧｅの代わりにＧｅ３Ｎ４を用いて、実施例
６と同様にゾルゲル用ワークスタンバを作製した。Example 8 A sol-gel work stand was produced in the same manner as in Example 6, using Ge3N4 instead of Ge in Example 6.
実施例２と同様にゾルゲル転写を行ったところ、１００
回以上繰り返し使用しても、転写バタンの劣化は認めら
れなかった。When sol-gel transfer was performed in the same manner as in Example 2, 100
No deterioration of the transfer button was observed even after repeated use.
実施例９
通常の方法で作製されたＮｉスタンバ（マスク）に、ス
パッタ法によりＣｒをＩＯＯ人成膜した。ついで、この
Ｃｒ層上にＣＨ４／Ｈ２混合ガスを用いてＤＣグロー放
電ＣＶＤ法により、ダイヤモンド状カーボン膜を５００
Ａ戒膜した。このようにして本発明によるゾルゲル用ワ
ークスタンパが作製できる。Example 9 An IOO film of Cr was manually formed by sputtering on a Ni standby (mask) prepared by a conventional method. Next, a diamond-like carbon film with a thickness of 500 mm was deposited on this Cr layer by DC glow discharge CVD using a CH4/H2 mixed gas.
A was arrested. In this way, the sol-gel work stamper according to the present invention can be produced.
本実施例によるダイヤモンド状カーボン膜で被覆された
Ｎｉスタンパでは、１００回以上ゾルゲル転写を行って
も、スタンパ面に傷が付くこともなく、また、ゾルゲル
材料の付着も認められなかった。In the Ni stamper coated with the diamond-like carbon film according to this example, even when sol-gel transfer was performed more than 100 times, the stamper surface was not scratched, and no sol-gel material was observed to adhere.
そのため、良好な転写が繰り返しできた。Therefore, good transfer could be repeated.
実施例１０
通常の方法で作製されたＮｉスタンバ（マスク）に、ス
バッタ法によりＴｉを１ｏｏＡ戒膜した。ついで、この
Ｔｉ層上にＣＨ４／Ｈ２混合ガスを用いてＤＣグロー放
電ＣＶＤ法により、ダイヤモンド状カーボン膜を５０Ｏ
Ａ或膜した。このようにして本発明によるゾルゲル用ワ
ークスタンパが作製できる。Example 10 A 10A film of Ti was applied to a Ni standby (mask) prepared by a conventional method using a sputtering method. Next, a diamond-like carbon film was deposited on this Ti layer at 50O
A was filmed. In this way, the sol-gel work stamper according to the present invention can be produced.
本実施例によるダイヤモンド状カーボン膜で被覆された
Ｎｉスタンパでは、１００回以上ゾルゲル転写を行って
も、スタンパ面に傷が付くこともなく、また、ゾルゲル
材料の付着も認められなかった。In the Ni stamper coated with the diamond-like carbon film according to this example, even when sol-gel transfer was performed more than 100 times, the stamper surface was not scratched, and no sol-gel material was observed to adhere.
そのため、良好な転写が繰り返しできた。Therefore, good transfer could be repeated.
実施例ｌ１
通常の方法で作製されたＮｉスタンパ（マスク）に、ス
パッタ法によりＣｕをＩＯＯＡ或膜した。ついで、この
Ｃｕ層上にＣＨ４／Ｈ２混合ガスを用いたＤＣグロー放
電ＣＶＤ法により、ダイヤモンド状カーボン膜を５０Ｏ
Ａ戒膜した。このようにして本発明ゾルゲル用ワークス
タンパが作製できる。Example 11 An IOOA film of Cu was deposited on a Ni stamper (mask) prepared by a conventional method using a sputtering method. Next, a diamond-like carbon film was deposited on this Cu layer at 50O
A was arrested. In this way, the sol-gel work stamp of the present invention can be produced.
実施例１２
実施例１１のＣｕの代わりにＺｒを用いて、実施例１１
と同様にゾルゲル用ワークスタンパを作製した。Example 12 Using Zr instead of Cu in Example 11, Example 11
A work stamp for sol-gel was prepared in the same manner as above.
実施例１１と同様にゾルゲル転写を行ったところ、１０
０回以上繰り返し使用しても、転写パタンの劣化は認め
られなかった。When sol-gel transfer was performed in the same manner as in Example 11, 10
No deterioration of the transferred pattern was observed even after repeated use 0 times or more.
実施例１３
実施例１１のＣｕの代わりにＣｏを用いて、実施例１１
と同様にゾルゲル用ワークスタンパを作製した。Example 13 Using Co instead of Cu in Example 11, Example 11
A work stamp for sol-gel was prepared in the same manner as above.
実施例１１と同様にゾルゲル転写を行ったところ、１０
０回以上繰り返し使用しても、転写パタンの劣化は認め
られなかった。When sol-gel transfer was performed in the same manner as in Example 11, 10
No deterioration of the transferred pattern was observed even after repeated use 0 times or more.
実施例１４
実施例１１のＣｕの代わりにＡｇを用いて、実施例ｌ１
と同様にゾルゲル用ワークスタンパを作製した。Example 14 Using Ag instead of Cu in Example 11, Example 11
A work stamp for sol-gel was prepared in the same manner as above.
実施例１１と同様にゾルゲル転写を行ったところ、１０
０回以上繰り返し使用しても、転写パタンの劣化は認め
らなかった。When sol-gel transfer was performed in the same manner as in Example 11, 10
No deterioration of the transferred pattern was observed even after repeated use 0 times or more.
実施例１５
実施例１１のＣｕの代わりにＡ１を用いて、実施例ｌ１
と同様にゾルゲル用ワークスタンバを作製した。Example 15 Using A1 instead of Cu in Example 11, Example l1
A work stand for sol-gel was prepared in the same manner as above.
実施例１１と同様にゾルゲル転写を行ったところ、１０
０回以上繰り返し使用しても、転写パタンの劣化は認め
られなかった。When sol-gel transfer was performed in the same manner as in Example 11, 10
No deterioration of the transferred pattern was observed even after repeated use 0 times or more.
実施例１６
実施例１１のＣｕの代わりにＳｎを用いて、実施例１１
と同様にゾルゲル用ワークスタンパを作製した。Example 16 Using Sn instead of Cu in Example 11, Example 11
A work stamp for sol-gel was prepared in the same manner as above.
実施例１１と同様にゾルゲル転写を行ったところ、１０
０回以上繰り返し使用しても、転写パタンの劣化は認め
られなかった。When sol-gel transfer was performed in the same manner as in Example 11, 10
No deterioration of the transferred pattern was observed even after repeated use 0 times or more.
実施例１７
実施例１１のＣｕＯ代わりにｐｂを用いて、実施例１１
と同様にゾルゲル用ワークスタンバを作製した。Example 17 Using pb instead of CuO in Example 11, Example 11
A work stand for sol-gel was prepared in the same manner as above.
実施例１１と同様にゾルゲル転写を行ったところ、１０
０回以上繰り返し使用しても、転写パタンの劣化は認め
られなかった。When sol-gel transfer was performed in the same manner as in Example 11, 10
No deterioration of the transferred pattern was observed even after repeated use 0 times or more.
（発明の効果）
以上述べてきたように、本発明によるスタンパは、従来
のスタンパに比べて短い工程で作製でき、歩留りあるい
はコストの面で有利であり、その工業上の意義は大きい
。(Effects of the Invention) As described above, the stamper according to the present invention can be manufactured in a shorter process time than conventional stampers, and is advantageous in terms of yield and cost, and has great industrial significance.
第１図および第２図は本発明によるスタンパの概略断面
図である。1 and 2 are schematic cross-sectional views of a stamper according to the present invention.
Claims (2)
ド状カーボン層を形成したことを特徴とするスタンパ。(1) A stamper characterized in that a diamond-like carbon layer is formed on a Ni thin plate having minute irregularities.
、ダイヤモンド状カーボン層を順次形成したことを特徴
とするスタンパ。(2) A stamper characterized in that an adhesion reinforcing layer and a diamond-like carbon layer are sequentially formed on a Ni thin plate having fine irregularities.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1153976A JP2800274B2 (en) | 1989-06-16 | 1989-06-16 | Stamper |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1153976A JP2800274B2 (en) | 1989-06-16 | 1989-06-16 | Stamper |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0319154A true JPH0319154A (en) | 1991-01-28 |
| JP2800274B2 JP2800274B2 (en) | 1998-09-21 |
Family
ID=15574195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1153976A Expired - Lifetime JP2800274B2 (en) | 1989-06-16 | 1989-06-16 | Stamper |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2800274B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1008105C2 (en) * | 1998-01-23 | 1999-07-26 | Axxicon Moulds Eindhoven Bv | Injection mold. |
| EP1048427A2 (en) * | 1999-04-26 | 2000-11-02 | Nippon Sheet Glass Co., Ltd. | Molding die, sol-gel composition produced using the die, and process for producing sol-gel composition |
| JP2006150807A (en) * | 2004-11-30 | 2006-06-15 | Hitachi Maxell Ltd | Mold for molding fine structure, preparation method of mold for molding fine structure and molding method of fine structure |
| JP2007116163A (en) * | 2005-10-18 | 2007-05-10 | Korea Inst Of Machinery & Materials | Stamp for fine imprint lithography and manufacturing method thereof |
| JP2007253410A (en) * | 2006-03-22 | 2007-10-04 | Toppan Printing Co Ltd | Imprinting mold and its manufacturing method |
| JP2007266384A (en) * | 2006-03-29 | 2007-10-11 | Toppan Printing Co Ltd | Mold for imprinting and manufacturing method thereof |
| JP2009149097A (en) * | 2009-02-04 | 2009-07-09 | Toshiba Corp | Stamper for imprint working, and method for producing the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0222012A (en) * | 1988-07-11 | 1990-01-24 | Tdk Corp | Stamper for molding and manufacture thereof |
-
1989
- 1989-06-16 JP JP1153976A patent/JP2800274B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0222012A (en) * | 1988-07-11 | 1990-01-24 | Tdk Corp | Stamper for molding and manufacture thereof |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1008105C2 (en) * | 1998-01-23 | 1999-07-26 | Axxicon Moulds Eindhoven Bv | Injection mold. |
| WO1999037471A1 (en) * | 1998-01-23 | 1999-07-29 | Axxicon Moulds Eindhoven B.V. | Injection mould |
| US6238197B1 (en) | 1998-01-23 | 2001-05-29 | Axxicon Moulds Eindhoven B.V. | Injection mould |
| EP1048427A2 (en) * | 1999-04-26 | 2000-11-02 | Nippon Sheet Glass Co., Ltd. | Molding die, sol-gel composition produced using the die, and process for producing sol-gel composition |
| EP1048427A3 (en) * | 1999-04-26 | 2002-11-13 | Nippon Sheet Glass Co., Ltd. | Molding die, sol-gel composition produced using the die, and process for producing sol-gel composition |
| JP2006150807A (en) * | 2004-11-30 | 2006-06-15 | Hitachi Maxell Ltd | Mold for molding fine structure, preparation method of mold for molding fine structure and molding method of fine structure |
| JP2007116163A (en) * | 2005-10-18 | 2007-05-10 | Korea Inst Of Machinery & Materials | Stamp for fine imprint lithography and manufacturing method thereof |
| US7914693B2 (en) | 2005-10-18 | 2011-03-29 | Korea Institute Of Machinery & Materials | Stamp for micro/nano imprint lithography using diamond-like carbon and method of fabricating the same |
| JP2007253410A (en) * | 2006-03-22 | 2007-10-04 | Toppan Printing Co Ltd | Imprinting mold and its manufacturing method |
| JP2007266384A (en) * | 2006-03-29 | 2007-10-11 | Toppan Printing Co Ltd | Mold for imprinting and manufacturing method thereof |
| JP2009149097A (en) * | 2009-02-04 | 2009-07-09 | Toshiba Corp | Stamper for imprint working, and method for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2800274B2 (en) | 1998-09-21 |
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