JPH02269178A - Antistatic film and production thereof - Google Patents
Antistatic film and production thereofInfo
- Publication number
- JPH02269178A JPH02269178A JP1089646A JP8964689A JPH02269178A JP H02269178 A JPH02269178 A JP H02269178A JP 1089646 A JP1089646 A JP 1089646A JP 8964689 A JP8964689 A JP 8964689A JP H02269178 A JPH02269178 A JP H02269178A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- complex salt
- coating
- antistatic film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Laminated Bodies (AREA)
- Paints Or Removers (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
- Elimination Of Static Electricity (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、ブラウン管パネル等の基体表面に塗布される
帯電防止膜に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an antistatic film applied to the surface of a substrate such as a cathode ray tube panel.
[従来の技術]
ブラウン管は高電圧で作動させる為起動時、或いは終了
時に該表面に静電気が誘起される。[Prior Art] Since cathode ray tubes are operated at high voltage, static electricity is induced on their surfaces when they are started up or shut down.
この静電気により該表面にほこりが付着しコントラスト
低下を引き起こしたり、或いは直接触れた際軽い電気シ
ョックによる不快感を生ずることが多い。This static electricity often causes dust to adhere to the surface, causing a reduction in contrast, or causing discomfort due to a mild electric shock when directly touched.
従来、上述の事柄を防止する為にブラウン管パネル表面
に帯電防止膜を付与する試みはかなり成されてきた。例
えば特開昭63−76247号記載の通り、ブラウン管
パネル表面を350℃程度に加熱しCVD法により酸化
スズ及び酸化イソジウム等の導電性酸化物層を設ける方
法が採用されていた。しかしながら、この方法において
は装置コストがかかることに加え、ブラウン管を高温加
熱するため、ブラウン管内の蛍光体の脱落を生じたり、
寸法精度が低下する等の問題があった。In the past, many attempts have been made to apply antistatic films to the surface of cathode ray tube panels in order to prevent the above-mentioned problems. For example, as described in JP-A No. 63-76247, a method has been adopted in which the surface of a cathode ray tube panel is heated to about 350 DEG C. and a layer of conductive oxides such as tin oxide and isodium oxide is formed by CVD. However, in addition to the equipment cost involved in this method, since the cathode ray tube is heated to a high temperature, the phosphor inside the cathode ray tube may fall off.
There were problems such as a decrease in dimensional accuracy.
また導電膜に用いる材料としては酸化スズが最も一般的
であるが、この場合低温処理では高性能膜が得にくい欠
点があった。Furthermore, tin oxide is the most common material used for the conductive film, but in this case it has the disadvantage that it is difficult to obtain a high-performance film with low-temperature treatment.
[発明の解決しようとする課題]
本発明は従来技術が有していた前述の欠点を解消しよう
とするものであり、低温熱処理が可能な高特性帯電防止
膜を新規に提供することを目的とするものである。[Problems to be Solved by the Invention] The present invention aims to eliminate the above-mentioned drawbacks of the prior art, and aims to provide a new high-performance antistatic film that can be heat treated at low temperatures. It is something to do.
[課題を解決するための手段]
すなわち本発明は、前述の問題点を解決すべくなされた
ものであり、基体表面に、7.7.8.8テトラシアノ
キノジメタン錯塩よりなる有機電導体を含む被膜を形成
したことを特徴とする帯電防止膜を提供するものである
。[Means for Solving the Problems] That is, the present invention has been made to solve the above-mentioned problems. The present invention provides an antistatic film characterized by forming a film containing:
本発明で用いる7、7,8.8テトラシアノキノジメタ
ン(以下TCNQと略す)錯塩は電子供与体(ドナー)
である各種塩と電子受容体(アクセプタ)であるTCN
Qとより成る有機電導体の一種である。The 7,7,8.8 tetracyanoquinodimethane (hereinafter abbreviated as TCNQ) complex salt used in the present invention is an electron donor.
various salts which are and TCN which is an electron acceptor (acceptor)
It is a type of organic conductor consisting of Q.
ドナーとしてはN位をアルキル基(炭素数1〜5)で置
換したイソキノリニウム特にN−n−プロピルイソキノ
リニウム、N −1so−プロピルイソキノリニウム、
N−n−ブチルイソキノリニウム等が好ましい。As a donor, isoquinolinium substituted with an alkyl group (1 to 5 carbon atoms) at the N position, particularly N-n-propylisoquinolinium, N-1so-propylisoquinolinium,
N-n-butylisoquinolinium and the like are preferred.
またN位を炭化水素基で置換してなるピリジン、ベンゾ
チアゾール、アクリジン、フェナジン、フエナントリジ
ン、キノリン、α−ナフトキノリンまたはβ−ナフトキ
ノリン等が好適に使用できる。Further, pyridine, benzothiazole, acridine, phenazine, phenanthridine, quinoline, α-naphthoquinoline, β-naphthoquinoline, etc. in which the N-position is substituted with a hydrocarbon group can be suitably used.
上記物質を用いた帯電防止膜コート液の調整法としては
種々考えられるが、例えば
1)極性溶媒にTCNQ塩を溶がした溶液をブラウン管
上に塗布し、その後熱処理を行う方法。Various methods can be considered for preparing the antistatic film coating solution using the above substances, including 1) a method in which a solution of TCNQ salt dissolved in a polar solvent is applied onto a cathode ray tube, and then heat treatment is performed.
2) TCNQ塩をボールミル等により微細化した結
晶をアルコール等に分散し、その溶液をブラウン管上に
塗布し、その後熱処理を行う方法。2) A method in which TCNQ salt is made into fine crystals using a ball mill, etc., and dispersed in alcohol, etc., and the solution is applied onto a cathode ray tube, followed by heat treatment.
が挙げられる。can be mentioned.
塗布法としては従来用いられてきた方法、即ちスピンコ
ード、デイツプコート、スプレーコート法等が好適に使
用出来る。また、スプレーコートして表面に凹凸を形成
し防眩効果も合わせて付与してもよく、その場合防眩帯
電防止膜となった本発明品の上にシリカ被膜等のハード
コートを設けてもよい、さらには、本発明の帯電防止膜
の上にスプレーコートして、表面に凹凸を有するシリカ
被膜のノングレアコートを設けてもよい。As the coating method, conventionally used methods such as spin cord, dip coating, spray coating, etc. can be suitably used. In addition, an anti-glare effect may also be imparted by spray coating to form irregularities on the surface. In this case, a hard coat such as a silica film may be provided on the product of the present invention, which serves as an anti-glare antistatic film. Furthermore, a non-glare coat of a silica film having an uneven surface may be provided by spray coating on the antistatic film of the present invention.
また、同様に本発明品の帯電防止膜の上に、フッ化マグ
ネシウム(MgF*)、シリカ(Sin、)等のTCN
Qi塩よりなる膜よりも低屈折率の材料を含む液を適宜
の光学膜厚となるようコートして、多1干渉効果による
低反射の帯電防止膜とすることもできる。Similarly, on the antistatic film of the product of the present invention, TCN such as magnesium fluoride (MgF*), silica (Sin, ), etc.
It is also possible to obtain an antistatic film with low reflection due to the multi-1 interference effect by coating the film with a liquid containing a material having a lower refractive index than the film made of Qi salt so as to have an appropriate optical thickness.
コーチイブ液の溶媒としては特に限定されないが、水、
水溶液、アルコール、エステル、エーテル、或いはジメ
チルホルムアミド(以下DMFと略す)、プロピレンカ
ーボネート、γ−ブチロラクトン等有機高誘電率溶媒が
使用可能である。The solvent for the coachib liquid is not particularly limited, but water,
Aqueous solutions, alcohols, esters, ethers, or organic high dielectric constant solvents such as dimethylformamide (hereinafter abbreviated as DMF), propylene carbonate, and γ-butyrolactone can be used.
また液中のTCNQ錯体の含量は1〜30ωt%含まれ
ていることが好ましい。Further, the content of the TCNQ complex in the liquid is preferably 1 to 30 ωt%.
また本発明において用いるTCNQ 1体を含む液体に
は、膜の付着強度及び硬度を向上させるためにバインダ
ーとして5i(OR)−R4−(X;3.4、R:アル
キル基)等を添加して5insを同時に析出させたり、
基体とのぬれ性を上げる為に界面活性剤として種々のも
のが使用し得るが例えば直鎖アルキルベンゼンスルホン
酸ナトリウム、アルキルエーテル硫酸エステル等を添加
してもよい。Furthermore, in order to improve the adhesion strength and hardness of the film, 5i(OR)-R4-(X: 3.4, R: alkyl group) or the like may be added to the liquid containing TCNQ 1 used in the present invention as a binder. to deposit 5ins at the same time,
Various surfactants can be used to improve wettability with the substrate, and for example, sodium linear alkylbenzene sulfonate, alkyl ether sulfate, etc. may be added.
本発明の帯電防止膜を形成する基体としては、ブラウン
管パネル、複写機用ガラス板、計器用パネル、クリーン
ルーム用ガラス、CRTあるいはLCD等の表示装置の
前面板等の各種ガラス、プラスチック基板を用いること
ができる。As the substrate on which the antistatic film of the present invention is formed, various glasses and plastic substrates such as cathode ray tube panels, copying machine glass plates, instrument panels, clean room glass, front plates of display devices such as CRTs and LCDs can be used. I can do it.
また、 TCNQ錯体を含む液に、ジルコニアやチタン
酸化物の粒子を膜特性の向上のために混入してもよい。Furthermore, particles of zirconia or titanium oxide may be mixed into the liquid containing the TCNQ complex in order to improve the film properties.
[実施例] 以下実施例及び比較例について述べる。[Example] Examples and comparative examples will be described below.
実施例l
N−n−ブチルイソキノリニウム(TCNQ)a錯塩を
、DMFに6重量%溶解し、溶液にエタノールを添加し
2倍に希釈する。Example 1 N-n-butylisoquinolinium (TCNQ) a complex salt is dissolved in DMF at 6% by weight, and ethanol is added to the solution to dilute it twice.
この液をブラウン管パネル表面にスピンコード法150
0 rpmで5秒塗布し、その後150℃で30分間熱
処理を行い約100 nm厚の膜を得た。Apply this liquid to the surface of the cathode ray tube panel using the spin code method.
The coating was applied for 5 seconds at 0 rpm, and then heat treated at 150° C. for 30 minutes to obtain a film with a thickness of about 100 nm.
このコート膜の表面抵抗を測定し、更に市販の消しゴム
に1kgの荷重をかけ膜表面を100回こすり膜剥離の
有無を目視で観察した。The surface resistance of this coated film was measured, and the surface of the film was rubbed 100 times using a commercially available eraser under a load of 1 kg, and the presence or absence of peeling of the film was visually observed.
結果を第1表に示した。The results are shown in Table 1.
実施例2
N−n−プロピルイソキノリニウム (TCNQ) を
錯塩を用いた以外は実施例1と同様に行った。Example 2 The same procedure as in Example 1 was carried out except that a complex salt of N-n-propylisoquinolinium (TCNQ) was used.
実施例3
β−ナフトキノリン(TCNQ)1.s錯塩をエタノー
ル中に3重量%添加し、ボールミル中で5時間回転分散
させた以外は実施例1と同様に行った。Example 3 β-naphthoquinoline (TCNQ)1. The same procedure as in Example 1 was conducted except that 3% by weight of the s-complex salt was added to ethanol and the mixture was dispersed by rotation in a ball mill for 5 hours.
実施例4
エチルシリケートとβ−ナフトキノリン(TCNQ)+
、+s錯塩を、重量比l:lでエタノール中に各々3重
量%ずつ添加した液を用いた以外は実施例3と同様に行
った。Example 4 Ethyl silicate and β-naphthoquinoline (TCNQ)+
, +s complex salts were added in ethanol in an amount of 3% by weight at a weight ratio of 1:1, but the same procedure as in Example 3 was used.
実施例5
実施例1の液を用い、スプレー塗布した以外は同様に行
った1、膜表面のぎらつき感を、膜表面より1mの距離
から目視し実施例1〜4のものと比較し、さらに表面粗
さ(Rz)と平均表面粗さ(Rav)を表面粗さ計を用
いて測定した。Example 5 The same procedure was carried out except that the solution of Example 1 was used and the coating was sprayed. 1. The glare on the film surface was visually observed from a distance of 1 m from the film surface and compared with those of Examples 1 to 4. Furthermore, surface roughness (Rz) and average surface roughness (Rav) were measured using a surface roughness meter.
実施例6
実施例1の液を用い、スプレー塗布した以外は同様に行
い、形成された被膜の上からエチルシリケートのブタノ
ール溶液をスピンコード法で塗布し200℃で40分間
加熱してハードコートを形成した。膜表面のぎらつき感
とRz、 Ravの測定も行った。Example 6 Using the solution of Example 1, the same procedure was carried out except that spray coating was performed. A butanol solution of ethyl silicate was applied onto the formed film using a spin code method and heated at 200°C for 40 minutes to form a hard coat. Formed. The glare, Rz, and Rav of the film surface were also measured.
実施例7
実施例1と同様に行い、形成された被膜の上からエチル
シリケートのブタノール溶液をスプレー塗布し200℃
で40分間加熱して反射防止膜を形成した。膜表面のぎ
らつき感とRz、 Ravの測定も行った。Example 7 The procedure was carried out in the same manner as in Example 1, and a butanol solution of ethyl silicate was spray applied onto the formed film at 200°C.
An antireflection film was formed by heating for 40 minutes. The glare, Rz, and Rav of the film surface were also measured.
実施例8
実施例1と同様に行い、形成された被膜の上から、低屈
折率材料のMgF* (固型分3重量%)を含むエタノ
ール溶液を、スピンコード法で塗布し200℃で30分
間加熱して被膜を形成した。Example 8 The process was carried out in the same manner as in Example 1, and an ethanol solution containing a low refractive index material MgF* (solid content 3% by weight) was applied onto the formed film using a spin cord method and heated at 200°C for 30 minutes. A film was formed by heating for a minute.
この場合、下層の膜は可視光域の中心波長約555n+
nに対して、約属波長の光学膜の約1100nの厚さで
、屈折率は約1.55であり、MgFi膜は同じ厚さ約
1100nで、屈折率は約1.37である。In this case, the lower film has a central wavelength of approximately 555n+ in the visible light range.
With respect to n, the optical film with a wavelength of about 1100 nm has a refractive index of about 1.55, and the MgFi film has the same thickness of about 1100 nm and has a refractive index of about 1.37.
比較例
5n(j2 、1.06gをエタノール20gに溶解し
た液を用いた以外は実施例1と同様に行った。Comparative Example 5n (j2, 1.06 g dissolved in 20 g of ethanol) was used in the same manner as in Example 1.
なお、実施例1〜4、比較例のRz、 Ravは、膜が
平滑面のため測定器の分解能より小さく測定不能であっ
た。In addition, Rz and Rav of Examples 1 to 4 and Comparative Example were smaller than the resolution of the measuring instrument and could not be measured because the membranes had smooth surfaces.
第1表
[発明の効果]
本発明により従来技術では得られなかった150℃程度
の低温熱処理により、低抵抗を有する強固な帯電防止膜
が容易に得られる。Table 1 [Effects of the Invention] According to the present invention, a strong antistatic film having low resistance can be easily obtained by low-temperature heat treatment at about 150° C., which could not be obtained with the prior art.
Claims (9)
メタン錯塩よりなる有機電導体を含む被膜を形成したこ
とを特徴とする帯電防止膜。(1) An antistatic film characterized in that a coating containing an organic conductor made of a 7,7,8,8 tetracyanoquinodimethane complex salt is formed on the surface of a substrate.
で置換したイソキノリニウムと7,7,8,8テトラシ
アノキノジメタンの錯塩よりなる有機電導体を含む被膜
を形成したことを特徴とする帯電防止膜。(2) On the surface of the substrate, the N position is an alkyl group (1 to 5 carbon atoms).
1. An antistatic film comprising an organic conductor made of a complex salt of isoquinolinium substituted with 7,7,8,8 tetracyanoquinodimethane.
に、7,7,8,8テトラシアノキノジメタン錯塩より
なる有機電導体を含んでいることを特徴とする帯電防止
膜。(3) An antistatic film characterized in that a film mainly composed of silica formed on the surface of a substrate contains an organic conductor made of a 7,7,8,8 tetracyanoquinodimethane complex salt.
メタン錯塩よりなる有機電導体を含む液を塗布し、加熱
することにより被膜を形成することを特徴とする帯電防
止膜の製造方法。(4) Production of an antistatic film characterized by forming a film by coating a substrate surface with a liquid containing an organic conductor made of a 7,7,8,8 tetracyanoquinodimethane complex salt and heating it. Method.
メタン錯塩と一般式Si(OR)_x・R_4_−_x
(x=3,4、R;アルキル基)を含む溶液を塗布し、
加熱することにより被膜を形成することを特徴とする帯
電防止膜の製造方法。(5) On the surface of the substrate, 7,7,8,8 tetracyanoquinodimethane complex salt and general formula Si(OR)_x・R_4_-_x
Applying a solution containing (x = 3, 4, R; alkyl group),
A method for producing an antistatic film, which comprises forming a film by heating.
メタン錯塩よりなる有機電導体を含む液をスプレー塗布
し、加熱して表面に反射防止効果のための凹凸を有する
被膜が形成されたことを特徴とする帯電防止膜。(6) Spray a liquid containing an organic conductor consisting of a 7,7,8,8 tetracyanoquinodimethane complex salt onto the surface of the substrate and heat it to form a coating with irregularities on the surface for antireflection effect. An antistatic film characterized by:
メタン錯塩よりなる有機電導体を含む液をスプレー塗布
し、加熱して表面に反射防止効果のための凹凸が形成さ
れた被膜の上に、耐擦傷性を有するハードコートを形成
したことを特徴とする帯電防止膜。(7) A coating in which a liquid containing an organic conductor consisting of a 7,7,8,8 tetracyanoquinodimethane complex salt is spray-coated on the surface of the substrate and heated to form irregularities on the surface for an antireflection effect. An antistatic film characterized by having a scratch-resistant hard coat formed thereon.
メタン錯塩よりなる有機電導体を含む液を塗布し、加熱
して形成された被膜の上に、表面に凹凸を有する反射防
止膜を形成したことを特徴とする帯電防止膜。(8) Apply a liquid containing an organic conductor consisting of a 7,7,8,8 tetracyanoquinodimethane complex salt to the surface of the substrate, and then heat it to form an anti-reflection coating with an uneven surface. An antistatic film characterized by forming a film.
メタン錯塩よりなる有機電導体を含む液を塗布し、加熱
して形成された被膜の上に、低屈折率材料を含む液を塗
布し加熱して低屈折率膜をを形成したことを特徴とする
帯電防止 膜。(9) A liquid containing an organic conductor consisting of a 7,7,8,8 tetracyanoquinodimethane complex salt is applied to the substrate surface, and a liquid containing a low refractive index material is applied on the coating formed by heating. An antistatic film characterized in that a low refractive index film is formed by coating and heating.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1089646A JPH02269178A (en) | 1989-04-11 | 1989-04-11 | Antistatic film and production thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1089646A JPH02269178A (en) | 1989-04-11 | 1989-04-11 | Antistatic film and production thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02269178A true JPH02269178A (en) | 1990-11-02 |
Family
ID=13976534
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1089646A Pending JPH02269178A (en) | 1989-04-11 | 1989-04-11 | Antistatic film and production thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02269178A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7166957B2 (en) | 2002-08-14 | 2007-01-23 | Thomson Licensing | CRT having a contrast enhancing exterior coating and method of manufacturing the same |
-
1989
- 1989-04-11 JP JP1089646A patent/JPH02269178A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7166957B2 (en) | 2002-08-14 | 2007-01-23 | Thomson Licensing | CRT having a contrast enhancing exterior coating and method of manufacturing the same |
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