JP2788295B2 - Method for producing antistatic film and cathode ray tube - Google Patents
Method for producing antistatic film and cathode ray tubeInfo
- Publication number
- JP2788295B2 JP2788295B2 JP19284889A JP19284889A JP2788295B2 JP 2788295 B2 JP2788295 B2 JP 2788295B2 JP 19284889 A JP19284889 A JP 19284889A JP 19284889 A JP19284889 A JP 19284889A JP 2788295 B2 JP2788295 B2 JP 2788295B2
- Authority
- JP
- Japan
- Prior art keywords
- cathode ray
- antistatic film
- ray tube
- antistatic
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Paints Or Removers (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
Description
【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は、帯電防止膜の製造方法及びそれを用いた陰
極線管に関する。The present invention relates to a method for producing an antistatic film and a cathode ray tube using the same.
(従来の技術) パーソナルコンピュータ、各種表示端末等に用いられ
る陰極線管の前面パネルは、帯電し易いため、大気中の
ごみ等の付着による画像の見にくさ等を生じる問題があ
った。かかる問題に対処するために特開昭61−118946号
公報にはシラノール基を含む帯電防止膜を形成する技術
が開示されており、特開昭63−76247号公報にはSi(O
R)4(Rはアルキル基)を吹き付け塗布し、焼成して
反射防止膜を形成した後、該反射防止膜上に常圧CVD法
によりSnO2、In2O3の帯電防止膜を形成する技術が開示
されている。しかしながら、前者は湿度等の外部環境に
影響され易く、帯電防止効果が不十分である。後者は、
CVD法を採用するため、大面積の帯電防止膜の形成には
不向きであるばかりか、膜形成コストが高くなる問題が
ある。(Prior Art) The front panel of a cathode ray tube used for a personal computer, various display terminals, and the like is easily charged, which causes a problem that an image is difficult to see due to adhesion of dust and the like in the atmosphere. To cope with this problem, JP-A-61-118946 discloses a technique for forming an antistatic film containing a silanol group, and JP-A-63-76247 discloses a technique of forming an Si (O
R) 4 (R is an alkyl group) is applied by spraying and baked to form an antireflection film, and then an antistatic film of SnO 2 and In 2 O 3 is formed on the antireflection film by a normal pressure CVD method. Techniques are disclosed. However, the former is easily affected by an external environment such as humidity and has an insufficient antistatic effect. The latter is
Since the CVD method is employed, it is not suitable for forming a large-area antistatic film, but also has a problem that the film forming cost is increased.
一方、帯電防止に関しては陰極線管に限らず、ガラ
ス、プラスチック部品の多いOA機器でも問題となる。特
に、コピーマシン等では静電気が発生し易い。従来、有
機バインダを主成分とした導電性塗料が用いられている
が、耐熱性に欠ける、膜強度が弱い等の問題があり、安
定した帯電防止効果を持たせることが困難であった。On the other hand, antistatic problems are not limited to cathode ray tubes, but also pose a problem for OA equipment with many glass and plastic parts. In particular, static electricity is easily generated in a copy machine or the like. Conventionally, a conductive paint containing an organic binder as a main component has been used. However, it has been difficult to provide a stable antistatic effect due to problems such as lack of heat resistance and weak film strength.
(発明が解決しようとする課題) このように帯電防止膜については、広範な要求がある
ものの、満足のいくものが得られないのが現状であっ
た。特に、製造が容易で、安定した帯電防止効果を有す
る帯電防止膜が要望されていた。(Problems to be Solved by the Invention) As described above, although there is a wide range of demands for antistatic films, at present, satisfactory antistatic films cannot be obtained. In particular, an antistatic film which is easy to manufacture and has a stable antistatic effect has been desired.
本発明は、上記要望を満たすべくなされたもので、安
定した帯電防止効果を有する帯電防止膜を容易に得るこ
とが可能な製造方法を提供し、またかかる方法を用いて
良好な帯電防止効果が得られる陰極線管を提供しようと
するものである。The present invention has been made in order to satisfy the above demand, and provides a manufacturing method capable of easily obtaining an antistatic film having a stable antistatic effect. It is intended to provide a cathode ray tube obtained.
[発明の構成] (課題を解決するための手段) 本発明は、導電性酸化物微粒子を含有するシリカゾル
を塗布した後、熱処理して帯電防止膜を製造する方法に
おいて、前記シリカゾルの溶剤成分としてCnH2n+1OH
(n≧4)のアルコールを含むものを用いることを特徴
とするものである。[Constitution of the Invention] (Means for Solving the Problems) The present invention provides a method for producing an antistatic film by applying a silica sol containing conductive oxide fine particles and then heat-treating the silica sol. C n H 2n + 1 OH
(N ≧ 4) alcohol containing alcohol is used.
上記導電性酸化物微粒子は、シリカゾル中で安定で、
焼成に必要な温度で特性が劣化しないものであればいず
れものでもよいが、特にSnO2又はIn2O3の少なくとも1
種を主成分とする場合には透過率の高い帯電防止膜を製
造でき、光学機器用として有効である。また、必要に応
じて添加物を加えたSnO2:Sb、SnO2:P、In2O3:Sn等の導
電性酸化物微粒子を用いてもよい。かかる導電性酸化物
微粒子は、特に透過率の高い帯電防止膜を製造する場合
には一次粒子径が200Å以下、より好ましくは150Å以下
のものを用いることが望ましい。The conductive oxide fine particles are stable in silica sol,
Any material may be used as long as the characteristics do not deteriorate at the temperature required for firing, and in particular, at least one of SnO 2 or In 2 O 3
When a seed is used as a main component, an antistatic film having a high transmittance can be produced, which is effective for optical devices. Further, conductive oxide fine particles such as SnO 2 : Sb, SnO 2 : P, and In 2 O 3 : Sn to which an additive is added as necessary may be used. It is desirable to use such conductive oxide fine particles having a primary particle diameter of 200 ° or less, more preferably 150 ° or less, particularly when an antistatic film having a high transmittance is produced.
上記シリカゾルは、基本的には焼成によりシリカ(Si
O2)を生成すればよいが、特にSi(OR)4(Rはアルキ
ル基)を主成分とした溶液は100〜600℃の低温で目的と
する帯電防止膜を形成できるため好ましい。また、必要
に応じて他の元素を添加したM(OR)x(M;Zr、Al、M
g、Ca等)を主成分とした溶液を用いてもよい。なお、
シリカゾルの濃度(固形分量)は塗布条件等により適宜
設定すればよいが、酸化物換算で0.5〜10重量%の範囲
にすることが望ましい。The above silica sol is basically made of silica (Si
O 2 ) may be generated, but a solution containing Si (OR) 4 (R is an alkyl group) as a main component is particularly preferable because a target antistatic film can be formed at a low temperature of 100 to 600 ° C. Further, M (OR) x (M; Zr, Al, M
g, Ca, etc.). In addition,
The concentration (solid content) of the silica sol may be appropriately set depending on the coating conditions and the like, but is preferably in the range of 0.5 to 10% by weight in terms of oxide.
上記導電性酸化物微粒子のシリカゾル中の配合量は、
帯電防止膜として良好な表面抵抗1010Ω/□以下程度を
実現できるように適宜設定すればよいが、特にシリカゾ
ル全体の固形分(酸化物換算)に対して30〜80重量%の
範囲とすることが望ましい。この理由は、導電性酸化物
微粒子の配合量を30重量%未満にすると低湿度下での帯
電防止作用が減少する、つまり表面抵抗が1〜2桁高く
なってしまい、一方その量が80重量%を越えると塗布液
中に導電性酸化物微粒子を安定的に分散させることが困
難となり、結果的には塗布液の保存性が低下する恐れが
あるからである。The amount of the conductive oxide fine particles in the silica sol is:
It may be appropriately set so as to realize a good surface resistance of about 10 10 Ω / □ or less as an antistatic film, and particularly in the range of 30 to 80% by weight based on the solid content (in terms of oxide) of the entire silica sol. It is desirable. The reason for this is that if the amount of the conductive oxide fine particles is less than 30% by weight, the antistatic effect under low humidity is reduced, that is, the surface resistance is increased by one to two digits, while the amount is 80% by weight. %, It becomes difficult to stably disperse the conductive oxide fine particles in the coating solution, and as a result, the storage stability of the coating solution may be reduced.
上記シリカゾルの溶剤成分としてのCnH2n+1OH(n≧
4)のアルコールは、例えばn−ブタノール、イソブチ
ルアルコール、アミルアルコール等を挙げることができ
る。溶剤成分は、前記アルコール成分の他にメチルアル
コール、エチルアルコール、プロピルアルコール等が用
いられるが、大面積でむらのない帯電防止膜を形成する
観点から、溶剤成分中に前記CnH2n+1OHのアルコールが2
5%以上含まれることが望ましい。C n H 2n + 1 OH (n ≧ 2) as a solvent component of the silica sol
Examples of the alcohol 4) include n-butanol, isobutyl alcohol, amyl alcohol and the like. As the solvent component, in addition to the alcohol component, methyl alcohol, ethyl alcohol, propyl alcohol and the like are used.From the viewpoint of forming a uniform antistatic film with a large area, the solvent component contains the C n H 2n + 1 in the solvent component. OH alcohol is 2
It is desirable to contain 5% or more.
上記シリカゾルの塗布方法としては、スプレー法、ス
ピンコート法、ディピング法等の各種の方法を採用し得
る。陰極線管の前面パネルの外表面に適用する場合に
は、反射防止の機能を同時に持たせる観点から、スプレ
ー法(吹き付け法)を採用することが好ましい。この場
合、形成された膜表面は微細な凹凸を生じるため、良好
な反射防止効果を付与することができる。前記凹凸状態
は、塗布条件により任意に調整できるが、形成された膜
の平均膜厚が1000Å前後、凹凸のピッチが約10〜30μm
前後、凹凸高さが表面粗さで0.2μm前後となるように
塗布することが解像度等の光学特性の面で特に好適であ
る。As a method for applying the silica sol, various methods such as a spray method, a spin coating method, and a dipping method can be adopted. When applied to the outer surface of the front panel of a cathode ray tube, it is preferable to employ a spray method (spraying method) from the viewpoint of simultaneously having an antireflection function. In this case, since the formed film surface has fine irregularities, a good antireflection effect can be provided. The uneven state can be arbitrarily adjusted depending on the coating conditions, but the average thickness of the formed film is around 1000 °, and the pitch of the unevenness is about 10 to 30 μm.
It is particularly preferable in terms of optical characteristics such as resolution to apply the coating so that the height before and after the unevenness is about 0.2 μm in surface roughness.
また、本発明に係わる帯電防止膜を形成した後、導電
性酸化物微粒子を含まないシリカゾルを吹き付け塗布・
焼成を行なうことにより、反射防止膜を別途設けること
もできる。Further, after forming the antistatic film according to the present invention, spray coating silica sol containing no conductive oxide fine particles.
By baking, an antireflection film can be separately provided.
(作用) 本発明によれば、導電性酸化物微粒子を含有し、溶剤
成分として常温での蒸気圧が30mmHg以上、沸点が100℃
以上と高いCnH2n+1OH(n≧4)のアルコールを含むシ
リカゾルを塗布した後、熱処理することによって、塗布
工程での溶剤成分の急速な揮発による膜厚の部分的な不
均一性を抑制できるため、大面積に亘って膜厚や組成が
均一で平滑な帯電防止膜を製造できる。また、この帯電
防止膜は組成的に均質であるため、膜強度が高く、かつ
外部環境による劣化を生じにくい。更に、塗布・焼成に
より形成できるため、製造が極めて容易となる。特に、
前面パネルの外表面に上記方法で帯電防止膜を形成する
ことによって、光学特性を低下させずに帯電防止機能が
付与された陰極線管を得ることができる。(Action) According to the present invention, it contains conductive oxide fine particles, and has a vapor pressure at room temperature of 30 mmHg or more and a boiling point of 100 ° C. as a solvent component.
After applying a silica sol containing an alcohol having a high C n H 2n + 1 OH (n ≧ 4) as described above, a heat treatment is performed to partially uneven the film thickness due to rapid volatilization of a solvent component in the coating process. Therefore, a smooth antistatic film having a uniform thickness and composition over a large area can be manufactured. Further, since the antistatic film is homogeneous in composition, it has a high film strength and is hardly deteriorated by an external environment. Further, since it can be formed by coating and baking, production becomes extremely easy. Especially,
By forming an antistatic film on the outer surface of the front panel by the above method, a cathode ray tube having an antistatic function can be obtained without deteriorating optical characteristics.
(実施例) 以下、本発明の実施例を詳細に説明する。(Example) Hereinafter, an example of the present invention will be described in detail.
実施例1 ガラス基板上に下記第1表に示す導電性酸化物微粒子
を含有し、[Si(OC2H5)4]をアルコール溶剤で溶解
したsiO2換算濃度が3重量%の5種のシリカゾルをスピ
ンコートした後、250℃で熱処理して帯電防止膜を製造
した。Example 1 Five kinds of conductive oxide fine particles shown in Table 1 below were contained on a glass substrate, and [Si (OC 2 H 5 ) 4 ] was dissolved in an alcohol solvent, and the concentration in terms of siO 2 was 3% by weight. After spin-coating silica sol, it was heat-treated at 250 ° C. to produce an antistatic film.
得られた各帯電防止膜の表面抵抗を測定した。その結
果を同第1表に併記した。The surface resistance of each of the obtained antistatic films was measured. The results are shown in Table 1.
上記第1表から明らかなようにNo1〜No5の帯電防止膜
は、いずれも1010Ω/□以下の低抵抗を実現でき、良好
な帯電防止効果を有することがわかる。但し、No1組成
のシリカゾルでは導電性酸化物微粒子が沈降し易く、No
4の組成のシリカゾルを用いて形成された帯電防止膜は
湿度10%の環境では表面抵抗が1011Ω/□になり、帯電
防止効果が減少した。 As is clear from Table 1, all of the antistatic films No. 1 to No. 5 can realize a low resistance of 10 10 Ω / □ or less and have a good antistatic effect. However, in the case of the silica sol having the No. 1 composition, the conductive oxide fine particles are likely to settle,
The antistatic film formed by using the silica sol having the composition of 4 had a surface resistance of 10 11 Ω / □ in an environment of 10% humidity, and the antistatic effect was reduced.
実施例2 前記第1表中のNo3の組成を有するシリカゾルを陰極
線管の前面パネル表面にスピンコートし、400℃のトン
ネル炉を通して加熱処理した。Example 2 A silica sol having a composition of No. 3 in Table 1 was spin-coated on the front panel surface of a cathode ray tube, and was heat-treated through a 400 ° C. tunnel furnace.
陰極線管の前面パネルの表面抵抗を測定したところ、
107Ω/□であった。これに対し、帯電防止膜を被覆し
ない陰極線管の前面パネルの表面抵抗は1012Ω/□であ
った。また、本実施例2の陰極線管の前面パネル表面の
透過率は90%以上と高く、かつ画面の曇りも見られなか
った。When the surface resistance of the front panel of the cathode ray tube was measured,
It was 10 7 Ω / □. On the other hand, the surface resistance of the front panel of the cathode ray tube not coated with the antistatic film was 10 12 Ω / □. The transmittance of the front panel surface of the cathode ray tube of Example 2 was as high as 90% or more, and no fogging was observed on the screen.
実施例3 前記第1表中のNo3の組成を有するシリカゾルを陰極
線管の前面パネル表面に吹き付け塗布し、400℃のトン
ネル炉を通して加熱処理した。Example 3 A silica sol having the composition of No. 3 in Table 1 was spray-coated on the front panel surface of a cathode ray tube, and was heated through a tunnel furnace at 400 ° C.
陰極線管の前面パネルの表面抵抗は、109Ω/□であ
り、映り込みも少なかった。The surface resistance of the front panel of the cathode ray tube was 10 9 Ω / □, and the reflection was small.
実施例4 前記第1表中のNo3の組成を有するシリカゾルを陰極
線管の前面パネル表面にスピンコートし、400℃のトン
ネル炉を通して加熱処理して帯電防止膜を形成した。つ
づいて、前面パネル表面の帯電防止膜上に[Si(OC
2H5)4]のみをエタノール25%、n−ブタノール75%
のアルコール溶剤で溶解した導電性酸化物微粒子無添加
のSiO2換算濃度が3重量%のシリカゾルを吹き付け塗布
し、パネルを150℃まで加熱した。Example 4 A silica sol having a composition of No. 3 in Table 1 was spin-coated on the front panel surface of a cathode ray tube, and heated through a tunnel furnace at 400 ° C. to form an antistatic film. Next, the [Si (OC
2 H 5) 4] only ethanol 25%, n-butanol 75%
A silica sol having a concentration of 3% by weight in terms of SiO 2 without the addition of conductive oxide fine particles dissolved in an alcohol solvent was sprayed and applied, and the panel was heated to 150 ° C.
陰極線管の前面パネルの表面抵抗は、108Ω/□であ
り、映り込みも軽減された。また、本実施例4の陰極線
管を湿度10〜90%の環境下に曝してもその前面パネルの
表面抵抗が1010Ω/□以上に上がることはなかった。The surface resistance of the front panel of the cathode ray tube, 10 8 Ω / □ and is, also was reduced glare. Further, even when the cathode ray tube of Example 4 was exposed to an environment having a humidity of 10 to 90%, the surface resistance of the front panel did not increase to 10 10 Ω / □ or more.
上述した実施例2〜4の陰極線管において、スイッチ
オフ後の誘導電圧が0Vになるまでの時間を測定したとこ
ろ、いずれも60秒間以下であった。これに対し、帯電防
止膜を被覆しない陰極線管は5分間以上かかった。In the cathode ray tubes of Examples 2 to 4 described above, the time required for the induced voltage to become 0 V after the switch-off was measured. On the other hand, the cathode ray tube not coated with the antistatic film took 5 minutes or more.
[発明の効果] 以上詳述した如く、本発明によれば安定した帯電防止
効果を有する帯電防止膜を容易に得ることができ、特に
陰極線管の帯電防止膜として有効に利用できる等顕著な
効果を奏する。[Effects of the Invention] As described in detail above, according to the present invention, an antistatic film having a stable antistatic effect can be easily obtained, and particularly, remarkable effects such as effective use as an antistatic film of a cathode ray tube. To play.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6,DB名) C09K 3/16 H01J 9/20 H01J 29/88 C09D 1/00 CA(STN)──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. 6 , DB name) C09K 3/16 H01J 9/20 H01J 29/88 C09D 1/00 CA (STN)
Claims (2)
を塗布した後、熱処理して帯電防止膜を製造する方法に
おいて、 前記シリカゾルの溶剤成分としてCnH2n+1OH(n≧4)
のアルコールを含むものを用いることを特徴とする帯電
防止膜の製造方法。1. A method for producing an antistatic film by applying a silica sol containing conductive oxide fine particles, followed by heat treatment, wherein C n H 2n + 1 OH (n ≧ 4) is used as a solvent component of the silica sol.
A method for producing an antistatic film, characterized by using an alcohol-containing film.
方法により帯電防止膜を形成したことを特徴とする陰極
線管。2. A cathode ray tube having an antistatic film formed on an outer surface of a front panel by the method according to claim 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19284889A JP2788295B2 (en) | 1989-07-26 | 1989-07-26 | Method for producing antistatic film and cathode ray tube |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19284889A JP2788295B2 (en) | 1989-07-26 | 1989-07-26 | Method for producing antistatic film and cathode ray tube |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0356582A JPH0356582A (en) | 1991-03-12 |
JP2788295B2 true JP2788295B2 (en) | 1998-08-20 |
Family
ID=16297981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19284889A Expired - Fee Related JP2788295B2 (en) | 1989-07-26 | 1989-07-26 | Method for producing antistatic film and cathode ray tube |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2788295B2 (en) |
-
1989
- 1989-07-26 JP JP19284889A patent/JP2788295B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0356582A (en) | 1991-03-12 |
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