JPH02199792A - Thin film el element - Google Patents
Thin film el elementInfo
- Publication number
- JPH02199792A JPH02199792A JP1018857A JP1885789A JPH02199792A JP H02199792 A JPH02199792 A JP H02199792A JP 1018857 A JP1018857 A JP 1018857A JP 1885789 A JP1885789 A JP 1885789A JP H02199792 A JPH02199792 A JP H02199792A
- Authority
- JP
- Japan
- Prior art keywords
- pellet
- luminous
- insulating layer
- electron beam
- transparent electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 9
- 239000008188 pellet Substances 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 12
- 229910052984 zinc sulfide Inorganic materials 0.000 claims abstract description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 6
- 239000005083 Zinc sulfide Substances 0.000 claims abstract description 5
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 8
- 238000010894 electron beam technology Methods 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 abstract description 2
- 229910002113 barium titanate Inorganic materials 0.000 abstract description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 2
- 238000000059 patterning Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910004299 TbF3 Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- LKNRQYTYDPPUOX-UHFFFAOYSA-K trifluoroterbium Chemical compound F[Tb](F)F LKNRQYTYDPPUOX-UHFFFAOYSA-K 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、交流駆動の薄膜ＥＬ（エレクトロルミネセン
ス）素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to an AC-driven thin film EL (electroluminescence) element.
（従来の技術）
一般に、この種の薄膜ＥＬ素子は、例えば特開昭６３−
１７０８９１号公報に開示され第４図に示すように二重
絶縁層構造を有し、ガラス等の透明絶縁板から成る基板
１上に蒸着法やスパッタリング法等の適当な方法を用い
てＩＴＯ等の透明導電材料を素材とする透明電極２を形
成し、次いでこの上に絶縁破壊を防ぐため、Ｓｉｎｇ、
ＡＱｚ（ｈ＊ ＹＪ３＋ Ｔａｇ’ｓ等の酸化物絶縁
材料を素材とする第１の絶縁Ｎ３、ＺｎＳ等の母体材料
内にＭｎ等の発光中心を添加した螢光材料を素材どする
発光層４、第１の絶縁層３と同様な材料から成る第２の
絶縁層５、及び前記透明電極２と対向すると共に反射性
を有する電極としてへａ等の導電材料を素材とする背面
電極６をこの順序で順次蒸着法やスパッタリング法等の
適当な方法を用いて積層形成して成るものである。(Prior Art) Generally, this type of thin film EL device is manufactured by, for example,
As disclosed in Japanese Patent No. 170891 and shown in FIG. 4, it has a double insulating layer structure and is made of a transparent insulating plate such as glass. A transparent electrode 2 made of a transparent conductive material is formed, and then in order to prevent dielectric breakdown, Sing,
A first insulating layer 4 made of an oxide insulating material such as AQz (h* YJ3+ Tag's), a luminescent layer 4 made of a fluorescent material in which a luminescent center such as Mn is added to a matrix material such as ZnS, A second insulating layer 5 made of a material similar to that of the first insulating layer 3, and a back electrode 6 made of a conductive material such as a, which faces the transparent electrode 2 and serves as a reflective electrode, in this order. It is formed by laminating layers using an appropriate method such as a sequential vapor deposition method or a sputtering method.
そして、透明電極２と背面電極６との間に交流電圧を印
加すると、電極２．６間に発生する電界により発光層４
が発光し、基板１を通って外部へ照射される。When an AC voltage is applied between the transparent electrode 2 and the back electrode 6, the electric field generated between the electrodes 2 and 6 causes the light emitting layer to
emits light and is irradiated to the outside through the substrate 1.
（発明が解決しようとする課題）
このような薄膜ＥＬ素子において、緑色発光を得るため
には、母体材料としての硫化亜鉛（Ｚｒ＋Ｓ）に発光中
心材料としてのフッ化テレビウム（ＴｂＦｓ）を添加し
たＺｎＳ ： ＴｂＦ、のペレットを用いて電子ビ−
ム蒸着法により発光Ｎ４を形成している。しかし、従来
はペレットの状態例えばペレット密度をほとんど考慮せ
ずペレットを形成していたため、条件を同じにしてペレ
ットを蒸着させても例えば電子線のあて方によって素子
の特性が変化し、再現性が悪く、高輝度化を達成できな
いと言う問題があった。(Problems to be Solved by the Invention) In order to obtain green light emission in such a thin film EL element, it is necessary to use ZnS, which is made by adding terebrium fluoride (TbFs) as a luminescent center material to zinc sulfide (Zr+S) as a base material. : Electron beam using pellets of TbF.
The light-emitting N4 is formed by a vapor deposition method. However, in the past, pellets were formed with little regard to pellet conditions, such as pellet density, so even if pellets were deposited under the same conditions, the characteristics of the device would change depending on, for example, how the electron beam was applied, resulting in poor reproducibility. Unfortunately, there was a problem in that high brightness could not be achieved.
そこで、本発明は前記問題に基づいて成されたものであ
り、素子の再現性を良好にし、高輝度化を達成できる薄
膜ＥＬ素子を提供することを目的とするものである。Therefore, the present invention has been made based on the above problem, and an object thereof is to provide a thin film EL element that can improve the reproducibility of the element and achieve high brightness.
（課題を解決するための手段）
本発明は、対向配設された透明電極と背面電極との間に
、硫化亜鉛からなる発光母体材料にフッ化テレビウムか
らなる発光中心材料を添加したペレット密度０．２０〜
０．２７ｇ／［Ｉ［Ｉ１１′３のペレットを電子ビーム
蒸着法に形成した発光層を介在せしめたものである。(Means for Solving the Problems) The present invention provides a pellet density of 0 in which a luminescent center material made of terebrium fluoride is added to a luminescent base material made of zinc sulfide between a transparent electrode and a back electrode arranged oppositely. .20~
A light-emitting layer was formed by electron beam evaporation using pellets of 0.27 g/[I[I11'3].
（作用）
ペレット密度を０．２０〜０．２７ｇ／ｍｍ’の範囲に
設定すると、ペレットの蒸発は均一性が増し、素子の再
現性が良好となる。(Function) When the pellet density is set in the range of 0.20 to 0.27 g/mm', the evaporation of the pellets becomes more uniform and the reproducibility of the device becomes better.
（実施例）
以下、図面に基づいて本発明の一実施例を詳述する。尚
、本実施例において、第４図で示した従来例と同一機能
を有する箇所には同一符号を付しその詳細な説明は省略
する。透光性のガラス基板１ （ＮＡ−４０）上には従
来例と同様な方法例えばスパッタリング法により透明電
極２を膜厚２０００人の膜で形成し、この透明電極２を
所望のパターンにパターニングし、その上にスパッタリ
ング法でＢａＴｉ０． （チタン酸バリウム）を膜厚６
０００人の膜で中心材料としてＴｂＦ３ （フッ化テレ
ビウム）を５．０ｗｔ％添加してペレット密度を０．２
６４ ｇ／ｍｍ’となるペレット７を形成する。そして
、第２図に示すように、電子ビーム蒸着法を用い、この
ペレット７を坩堝８に収納し、ペレットマを電子線で加
熱させると、ペレット７が蒸気となって上昇し、上方に
設けられたガラス基板１の第１の絶縁層３上に付着し発
光Ｎ４が形成される。この場合、発光層４の膜厚は５０
００人であり、発光層４を形成した後、約１時間、３５
０“Ｃの熱処理が行われる。この熱処理の後、発光層４
の上にＨｆＯ，（酸化ハフニュム）を膜厚６０００人の
膜で積層し第２の絶縁Ｎ５を形成し、またその上にへ〇
等により背面電極６を膜厚２０００人の膜で形成して薄
膜ＥＬ素子が形成される。(Example) Hereinafter, an example of the present invention will be described in detail based on the drawings. In this embodiment, parts having the same functions as those of the conventional example shown in FIG. 4 are denoted by the same reference numerals, and detailed explanation thereof will be omitted. On a transparent glass substrate 1 (NA-40), a transparent electrode 2 is formed with a film thickness of 2,000 yen by a method similar to the conventional example, such as sputtering, and this transparent electrode 2 is patterned into a desired pattern. , BaTi0. (barium titanate) film thickness 6
In the 000 membrane, 5.0 wt% of TbF3 (terebium fluoride) was added as the core material, and the pellet density was 0.2.
A pellet 7 having a weight of 64 g/mm' is formed. Then, as shown in FIG. 2, by using the electron beam evaporation method, the pellets 7 are placed in a crucible 8, and when the pellets are heated with an electron beam, the pellets 7 turn into steam and rise. A light emitting layer N4 is formed on the first insulating layer 3 of the glass substrate 1. In this case, the thickness of the light emitting layer 4 is 50
00 people, and after forming the light emitting layer 4, for about 1 hour, 35
0"C heat treatment is performed. After this heat treatment, the light emitting layer 4
A second insulating layer N5 is formed by laminating HfO (hafnium oxide) with a thickness of 6,000 yen on top, and a back electrode 6 is formed thereon with a thickness of 2,000 yen by etching etc. A thin film EL element is formed.
以上のように構成される本発明の薄膜ＥＬ素子は、Ｚｎ
Ｓ ：↑ｂＦ、のペレット７をペレット密度０．２６４
ｇ／ｌ１１ｍ”ａ度にて形成し、このペレット７を用い
て電子ビーム蒸着法により発光層４を形成したものであ
る。このようにペレット密度を０．２６４ ｇ ／ｍｍ
’程度にすることにより、蒸着の際、ＺｎＳ ： Ｔ
ｂＦ３の蒸発が均一に近いものとなり、蒸着したＴｂＦ
３の濃度の再現性を良好とすることができる。尚、第３
図は印加電圧と輝度との関係を示しており、縦軸は対数
目盛りである。この場合、ペレット密度を０．２９０
ｇ／ｍｍ’とすると輝度は低く、ペレット密度を０．２
６４及び０．２１ ｇ ／ｍｍ’とすると輝度は２倍程
度同上する。これらの結果及び出願人の実験によると、
ペレット密度を０．２０〜０．２７ｇ／ｍｍ’の範囲に
設定することにより素子の再現性が良好となり同じ条件
で形成した素子の特性がほぼ同じとなるとともに、輝度
が向上する。The thin film EL device of the present invention configured as described above is made of Zn
S: ↑bF, pellet 7 with pellet density 0.264
g/l 11 m''a degrees, and the luminescent layer 4 was formed by electron beam evaporation using the pellets 7. In this way, the pellet density was set to 0.264 g/mm.
ZnS: T
The evaporation of bF3 becomes nearly uniform, and the deposited TbF
The reproducibility of the concentration of No. 3 can be made good. Furthermore, the third
The figure shows the relationship between applied voltage and brightness, and the vertical axis is on a logarithmic scale. In this case, the pellet density is 0.290
g/mm', the brightness is low, and the pellet density is 0.2
64 and 0.21 g/mm', the brightness is about twice as high as above. According to these results and the applicant's experiments,
By setting the pellet density in the range of 0.20 to 0.27 g/mm', the reproducibility of the device is good, and the characteristics of devices formed under the same conditions are almost the same, and the brightness is improved.
以上、本発明の一実施例を詳述したが、本発明の要旨の
範囲内で適宜変形できる。例えば前記実施例は発光層４
の両側に絶縁Ｎ３．５を設けた二重絶縁構造を示したが
、どちらか一方の絶縁層を設けたＥＬ素子にも適用でき
る。Although one embodiment of the present invention has been described above in detail, it can be modified as appropriate within the scope of the gist of the present invention. For example, in the above embodiment, the light emitting layer 4
Although a double insulation structure is shown in which an insulation layer of N3.5 is provided on both sides, it can also be applied to an EL element in which an insulation layer is provided on either side.
以上詳述したように本発明によれば、対向配設された透
明電極と背面電極との間に、硫化亜鉛からなる発光母体
材料にフッ化テレビウムからなる発光中心材料を添加し
たペレット密度０．２０〜０．２７ｇ／＝３のペレット
を電子ビーム蒸着法に形成した発光層を介在せしめたこ
とにより、素子の再現性を良好にし、高輝度化を達成で
きる薄膜ＥＬ素子を提供することができる。As described in detail above, according to the present invention, a pellet density of 0.5 mm is obtained by adding a luminescent center material made of terebrium fluoride to a luminescent base material made of zinc sulfide between the transparent electrode and the back electrode which are arranged opposite to each other. By interposing a light-emitting layer formed by electron beam evaporation using pellets of 20 to 0.27 g/=3, it is possible to provide a thin film EL device that can improve the reproducibility of the device and achieve high brightness. .
第１図は本発明の一実施例を示す断面図、第２図は電子
ビーム蒸着法を示す模式図、第３図は駆動電圧と輝度と
の関係を示すグラフ、第４図は従来例を示す断面図であ
る。
２−透明電極 ４・・・発光層
６・−背面電極 ７・・−ペレット特許出願人
日本精機株式会社
代理人 弁理士 牛 木 護
同 弁理士 薄 １）長四部
第２図
Ｒし□ｉト’Ｅ友
３図
４図Fig. 1 is a cross-sectional view showing an embodiment of the present invention, Fig. 2 is a schematic diagram showing an electron beam evaporation method, Fig. 3 is a graph showing the relationship between driving voltage and brightness, and Fig. 4 is a conventional example. FIG. 2-Transparent electrode 4...Light emitting layer 6--Back electrode 7...-Pellet patent applicant
Nippon Seiki Co., Ltd. Agent Patent Attorney Ushiki Godo Patent Attorney Usui 1) Section 4, Figure 2, R, □It'E, Friend, Figure 3, Figure 4
Claims (1)
硫化亜鉛からなる発光母体材料にフッ化テレビウムから
なる発光中心材料を添加したペレット密度０．２０〜０
．２７ｇ／ｍｍ＾３のペレットを電子ビーム蒸着法に形
成した発光層を介在せしめたことを特徴とする薄膜ＥＬ
素子。(1) Between the transparent electrode and the back electrode arranged oppositely,
Pellets with a density of 0.20 to 0, which are made by adding a luminescent center material made of terebrium fluoride to a luminescent host material made of zinc sulfide.
．． A thin film EL characterized by having a light-emitting layer formed from pellets of 27 g/mm^3 by electron beam evaporation.
element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1018857A JPH02199792A (en) | 1989-01-27 | 1989-01-27 | Thin film el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1018857A JPH02199792A (en) | 1989-01-27 | 1989-01-27 | Thin film el element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02199792A true JPH02199792A (en) | 1990-08-08 |
Family
ID=11983211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1018857A Pending JPH02199792A (en) | 1989-01-27 | 1989-01-27 | Thin film el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02199792A (en) |
-
1989
- 1989-01-27 JP JP1018857A patent/JPH02199792A/en active Pending
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