JPS623427B2 - - Google Patents
Info
- Publication number
- JPS623427B2 JPS623427B2 JP53065229A JP6522978A JPS623427B2 JP S623427 B2 JPS623427 B2 JP S623427B2 JP 53065229 A JP53065229 A JP 53065229A JP 6522978 A JP6522978 A JP 6522978A JP S623427 B2 JPS623427 B2 JP S623427B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- emitting layer
- light emitting
- layer
- luminescent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 25
- 239000003086 colorant Substances 0.000 claims description 8
- 238000001228 spectrum Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 59
- 238000000295 emission spectrum Methods 0.000 description 9
- 238000004020 luminiscence type Methods 0.000 description 9
- 230000005684 electric field Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000005284 excitation Effects 0.000 description 5
- 239000013543 active substance Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910018672 Mn—F Inorganic materials 0.000 description 1
- 229910004299 TbF3 Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- LKNRQYTYDPPUOX-UHFFFAOYSA-K trifluoroterbium Chemical compound F[Tb](F)F LKNRQYTYDPPUOX-UHFFFAOYSA-K 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
Description
【発明の詳細な説明】
本発明は交流電界の印加に依つてEL（Electro
Luminescence）発光を呈する薄膜EL素子に関
し、特に発光層に異なる発光領域を形成して多色
発光を得ることのできる薄膜EL素子の素子構造
に関するものである。[Detailed Description of the Invention] The present invention utilizes EL (Electro
The present invention relates to a thin film EL device that emits light (luminescence), and in particular to a device structure of a thin film EL device that can obtain multicolor light emission by forming different light emitting regions in a light emitting layer.
従来、交流動作の薄膜EL素子に関して、発光
層に規則的に高い電界（106V／cm程度）を印加
し、絶縁耐圧、発光効率及び動作の安定性等を高
めるために、発光センターとなる活性物質として
0.1〜2.0wt％のMnをドープしたZnS、ZnSe等の
半導体発光層をY2O3、TiO2、Si3N4等の誘電体薄
膜でサンドイツチした三層構造ZnS：Mn（又は
ZnSe：Mn）EL素子が開発され、発光諸特性の
向上が確かめられている。この薄膜EL素子は数
KHzの交流電界印加によつて高輝度発光し、し
かも長寿命であるという特徴を有している。また
この薄膜EL素子の発光に関しては印加電圧を昇
圧していく過程と高電圧側より降圧していく過程
で、同じ印加電圧に対して発光輝度が異なるとい
つたヒステリシス特性を有していることが発見さ
れ、そしてこのヒステリシス特性を有する薄膜
EL素子に印加電圧を昇圧する過程に於いて、
光、電界、熱等が付与されると薄膜EL素子はそ
の強度に対応した発光輝度の状態に励起され、
光、電界、熱等を除去して元の状態に戻しても発
光輝度が高くなつた状態に留まるといつたメモリ
ー現象が存在することが知られている。そしてこ
のメモリー現象を有効に活用して薄膜EL素子を
メモリ素子に利用する薄膜EL素子応用技術が現
在産業界で研究開発中である。 Conventionally, for AC-operated thin-film EL devices, a high electric field (about 10 6 V/cm) is regularly applied to the light-emitting layer, which acts as a light-emitting center in order to improve dielectric strength, luminous efficiency, and operational stability. as an active substance
A three - layer structure ZnS: Mn ( or
ZnSe:Mn) EL devices have been developed, and improvements in various light-emitting properties have been confirmed. This thin film EL element has several
It emits high-intensity light when a KHz alternating current electric field is applied, and has a long lifespan. Furthermore, regarding the light emission of this thin film EL element, it has a hysteresis characteristic in which the light emission brightness differs for the same applied voltage in the process of increasing the applied voltage and in the process of decreasing the voltage from the high voltage side. was discovered, and a thin film with this hysteresis property
In the process of boosting the voltage applied to the EL element,
When light, electric field, heat, etc. are applied, the thin film EL element is excited to a state of luminance corresponding to the intensity,
It is known that there is a memory phenomenon in which the luminance remains in a high state even after the light, electric field, heat, etc. are removed and the state is returned to its original state. Thin-film EL device application technology that effectively utilizes this memory phenomenon to utilize thin-film EL devices as memory devices is currently being researched and developed in industry.
薄膜EL素子の１例としてZnS：Mn薄膜EL素子
の基本的構造を第１図に示す。 As an example of a thin film EL device, the basic structure of a ZnS:Mn thin film EL device is shown in FIG.
第１図に基いて薄膜EL素子の構造を具体的に
説明すると、ガラス基板１上にIn2O3、SnO2等の
透明電極２、さらにその上に積層してY2O3、
Si3N4、SiO2等からなる第１の誘電体層３がスパ
ツタあるいは電子ビーム蒸着法等により重畳形成
されている。第１の誘電体層３上にはZnS：Mn
焼結ペレツトを電子ビーム蒸着することにより得
られるZnS発光層４が形成されている。この時蒸
着用のZnS：Mn焼結ペレツトには活性物質とな
るMnが目的に応じた濃度に設定されたペレツト
が使用される。ZnS発光層４上には第１の誘電体
層３と同様の材質から成る第２の誘電体層５が積
層され、更にその上にAl等から成る背面電極６
が蒸着形成されている。透明電極２と背面電極６
は交流電源７に接続され、薄膜EL素子が駆動さ
れる。 The structure of the thin film EL element will be explained in detail based on FIG. 1. A transparent electrode 2 made of In 2 O 3 , SnO 2 , etc. is placed on a glass substrate 1, and Y 2 O 3 , etc.
A first dielectric layer 3 made of Si 3 N 4 , SiO 2 or the like is formed in an overlapping manner by sputtering or electron beam evaporation. ZnS:Mn on the first dielectric layer 3
A ZnS light emitting layer 4 is formed by electron beam evaporation of sintered pellets. At this time, the ZnS:Mn sintered pellets used for deposition are pellets in which the concentration of Mn, which is an active substance, is set to suit the purpose. A second dielectric layer 5 made of the same material as the first dielectric layer 3 is laminated on the ZnS light emitting layer 4, and a back electrode 6 made of Al etc.
is formed by vapor deposition. Transparent electrode 2 and back electrode 6
is connected to an AC power source 7, and the thin film EL element is driven.
電極２，６間にAC電圧を印加すると、ZnS発
光層４の両側の誘電体層３，５間に上記AC電圧
が印加されることになり、従つてZnS発光層４内
に誘起された電界によつて伝導帯に励起されかつ
加速されて充分なエネルギーを得た電子が、直接
Mn発光センターを励起し、励起されたMn発光セ
ンターが基底状態に戻る際に黄色の発光を行な
う。即ち高電界で加速された電子がZnS発光層４
中の発光センターであるZnサイトに入つたMn原
子の電子を励起し、基底状態に落ちる時略々5850
Åをピークに幅広い波長領域で、強い発光を呈す
る。 When an AC voltage is applied between the electrodes 2 and 6, the above AC voltage is applied between the dielectric layers 3 and 5 on both sides of the ZnS light emitting layer 4, and therefore the electric field induced in the ZnS light emitting layer 4 Electrons that are excited and accelerated into the conduction band and gain sufficient energy are directly
The Mn luminescent center is excited, and when the excited Mn luminescent center returns to the ground state, it emits yellow light. In other words, electrons accelerated by a high electric field reach the ZnS light emitting layer 4.
When the electrons of the Mn atom enter the Zn site, which is the luminescent center of the
It emits strong light in a wide wavelength range with a peak of Å.
上記発光層４を誘電体層３，５で挾設した三層
構造の薄膜EL素子に使用される発光層４は
ZnS：Mn、ZnS：TbF3またはZnS：TmF3等で構
成される単層薄膜が用いられ、それぞれ発光セン
ターに対応して黄色、緑色、青色の発光色を示
す。それぞれの色の混合色を得る構成としては、
種々の発光センターを単層薄膜である発光層４中
に同時にドープして各発光センターの種類に対応
した発光色を発光層４から同時に出射させること
によりその混色発光を得る構成が考えられる。し
かしながらこの構成に於いては、以下に述べる如
き問題点が発生する。 The light emitting layer 4 used in a three-layer thin film EL device in which the above light emitting layer 4 is sandwiched between dielectric layers 3 and 5 is
A single-layer thin film composed of ZnS:Mn, ZnS:TbF 3 or ZnS:TmF 3 is used, and each emits yellow, green, and blue colors corresponding to the luminescent centers. The configuration for obtaining a mixed color of each color is as follows:
A conceivable configuration is to simultaneously dope various luminescent centers into the luminescent layer 4, which is a single-layer thin film, and simultaneously emit luminescent colors corresponding to the types of each luminescent center from the luminescent layer 4, thereby obtaining mixed color luminescence. However, in this configuration, problems as described below occur.
(1) ZnS等の発光層にMn及びTbF3双方をドープ
した薄膜EL素子では、黄色、緑色の混合色発
光を得ることはできなく、第２図に示す様に
Mn−Ｆによる赤色の発光を呈する。(1) A thin film EL device in which the light-emitting layer, such as ZnS, is doped with both Mn and TbF 3 cannot emit mixed color light of yellow and green, as shown in Figure 2.
It emits red light due to Mn-F.
(2) 単層の発光層に異なる励起エネルギーを必要
とする複数種の発光センターをドープすると、
電子の平均自由行程の関係から、低い励起エネ
ルギーの発光センターが良く励起され、高い励
起エネルギーを必要とする発光センターは励起
されにくい。その結果、励起され易い発光セン
ターの発光色が優先的に出射され、励起されに
くい発光センターの発光強度は弱くなる。従つ
て必要とされる混色発光を完全な状態で得るこ
とはできない。(2) When a single emissive layer is doped with multiple types of emissive centers that require different excitation energies,
Due to the relationship between the mean free path of electrons, luminescent centers with low excitation energy are well excited, and luminescent centers that require high excitation energy are hardly excited. As a result, the luminescent color of the luminescent center that is easily excited is preferentially emitted, and the luminescent intensity of the luminescent center that is not easily excited is weakened. Therefore, the required mixed color luminescence cannot be obtained in a perfect state.
(3) 単層の発光層の母体に発光色の異なる種々の
発光センターを入れることは発光センターの距
離が短かくなり、電子は発光センターを励起す
るだけのエネルギーを得ることが困難となるた
め、発光強度が低下するいわゆる濃度クエンチ
ングを起こす。(3) Inserting various luminescent centers with different emission colors into a single luminescent layer matrix shortens the distance between the luminescent centers, making it difficult for electrons to obtain enough energy to excite the luminescent centers. , causing so-called concentration quenching in which the luminescence intensity decreases.
本発明は技術的手段を駆使することにより、上
記問題点を有効に解決したものであり、単層薄膜
の発光層に複数の発光センターをドープするので
はなく、単層薄膜の発光層に１種類の発光センタ
ーをドープしかつこの発光層を複数段に積層し、
各発光層相互間ではドープされる発光センターを
異なる種類に設定して出射されるEL発光の発光
色を異ならせ、各発光層より出射されるEL発光
を重ね合わせて混色発光を得る構成を基本とし、
次に得られる混色発光を完全な状態とするために
各発光層の層厚を適宜制御設定して各発光層から
出射されるEL発光強度を調整し、希望する混色
発光を得ることを特徴としている。即ち、混色さ
れる個々のEL発光強度を発光層厚の制御によつ
て調整し、理想とする混色発光を実現したもので
あり、EL素子内に異なる発光色を呈する領域を
個々別に構成し、種類の異なる発光センターに対
し、励起に必要な平均自由行程を確実に与えるこ
とにより、励起効率を改善するとともに発光色の
設定も適宜選択することのできる新規有用な薄膜
EL素子の構造を提供することを目的とするもの
である。 The present invention effectively solves the above problems by making full use of technical means, and instead of doping a plurality of luminescent centers into the luminescent layer of a single thin film, it By doping different types of luminescent centers and stacking these luminescent layers in multiple stages,
The basic configuration is to set different types of doped luminescent centers between each luminescent layer to vary the emission color of the EL luminescence emitted, and to obtain mixed color luminescence by overlapping the EL luminescence emitted from each luminescent layer. year,
Next, in order to perfect the mixed color light emission obtained, the thickness of each light emitting layer is appropriately controlled and the intensity of the EL light emitted from each light emitting layer is adjusted to obtain the desired mixed color light emission. There is. In other words, the intensity of the EL light emitted by each of the mixed colors is adjusted by controlling the thickness of the light emitting layer to achieve the ideal mixed color light emission, and regions exhibiting different light emitting colors are configured individually within the EL element. A new and useful thin film that improves excitation efficiency and allows the emission color to be selected appropriately by reliably providing the mean free path necessary for excitation to different types of luminescent centers.
The purpose is to provide the structure of an EL element.
以下、本発明の１実施例について図面を参照し
ながら詳説する。 Hereinafter, one embodiment of the present invention will be explained in detail with reference to the drawings.
第３図は本発明の１実施例である薄膜EL素子
の構造を示す基本構成図である。 FIG. 3 is a basic configuration diagram showing the structure of a thin film EL device which is an embodiment of the present invention.
パイレツクス等の耐熱ガラスから成るガラス基
板１の上面にIn2O3、SnO2（ネサ膜）等から成る
透明電極２、SiO2とSi3N4複合膜として構成され
る第１の誘電体層３が順次スパツタリング法ある
いは電子ビーム蒸着法により積層され、第１の誘
電体層３上にはZnS：Mnから成る第１の発光層
４ａが約1400Å程度の膜厚で堆積され、更にこの
第１の発光層４ａ上にはZnS：TbF3から成る第
２の発光層４ｂが600Å〜5000Åの膜厚で重畳形
成されている。第２の発光層４ｂ上にはSi3N4か
ら成る第２の誘電体層５が2700Å程度の膜厚で更
にAl等の金属から成る背面電極６が積層されて
いる。第１の発光層４ａ中のMn濃度は約1.0wt
％、第２の発光層４ｂ中のTbF3濃度は約0.5mol
％である。 A transparent electrode 2 made of In 2 O 3 , SnO 2 (NESA film), etc., and a first dielectric layer made of a composite film of SiO 2 and Si 3 N 4 are formed on the upper surface of a glass substrate 1 made of heat-resistant glass such as Pyrex. 3 are sequentially laminated by sputtering or electron beam evaporation, and a first light emitting layer 4a made of ZnS:Mn is deposited to a thickness of about 1400 Å on the first dielectric layer 3. A second light emitting layer 4b made of ZnS:TbF 3 is superimposed on the light emitting layer 4a with a thickness of 600 Å to 5000 Å. On the second light emitting layer 4b, a second dielectric layer 5 made of Si 3 N 4 with a thickness of about 2700 Å is further laminated with a back electrode 6 made of a metal such as Al. The Mn concentration in the first light emitting layer 4a is approximately 1.0wt
%, the TbF 3 concentration in the second light emitting layer 4b is approximately 0.5 mol
%.
上記実施例に於いて、Mn濃度及びTbF3濃度は
最適濃度値より若干ずれているが、Mn濃度が0.1
〜2.0wt％の範囲に対し、TbF3濃度は0.1〜
4.0mol％の範囲で適宜選択することにより本発明
は実施される。また活性物質はMn、TbF3に限定
されることなく、希望する発光に対応した活性物
質を任意に採択できる。 In the above example, the Mn concentration and TbF 3 concentration are slightly deviated from the optimum concentration value, but the Mn concentration is 0.1
TbF3 concentration ranges from 0.1 to 2.0 wt%
The present invention can be carried out by appropriately selecting the amount within the range of 4.0 mol%. Furthermore, the active substance is not limited to Mn or TbF 3 , and any active substance that corresponds to the desired luminescence can be selected.
上記構造を有する薄膜EL素子の発光スペクト
ルについて第４図Ａ，Ｂ，Ｃ，Ｄを参照しながら
説明する。 The emission spectrum of the thin film EL device having the above structure will be explained with reference to FIGS. 4A, B, C, and D.
第４図Ａは上記構造を有する薄膜EL素子に於
いて、第１の発光層４ａの膜厚を1400Å、第２の
発光層４ｂの膜厚を3800Åに設定した時の発光ス
ペクトル、第４図Ｂは同様に第１の発光層４ａの
膜厚を1400Å、第２の発光層４ｂの膜厚を1300Å
に設定した時の発光スペクトルを示す。尚、第４
図ＣはZnS：Mnから成る膜厚1400Åの発光層単
独の発光スペクトル、第４図ＤはZnS：TbF3か
ら成る膜厚3810Åの発光層単独の発光スペクトル
を示す。 Figure 4A shows an emission spectrum when the thickness of the first light emitting layer 4a is set to 1400 Å and the thickness of the second light emitting layer 4b is set to 3800 Å in a thin film EL device having the above structure. Similarly, for B, the thickness of the first light emitting layer 4a is 1400 Å, and the thickness of the second light emitting layer 4b is 1300 Å.
Shows the emission spectrum when set to . Furthermore, the fourth
Figure C shows the emission spectrum of a 1400 Å thick light emitting layer made of ZnS:Mn, and Figure 4 D shows the emission spectrum of a 3810 Å thick light emitting layer made of ZnS:TbF 3 .
第４図Ａ，Ｂより明らかな如く、第１の発光層
と第２の発光層間の膜厚比率を変化させると膜厚
の割合に応じて発光スペクトルも変化する。発光
層の膜厚を厚くするとその発光層の発光色も強く
なり、逆に膜厚を薄くすると発光色も弱くなる。
従つて発光層の各層厚を制御設定することによ
り、各発光層より生起されるEL発光色の混色発
光スペクトルを選択設定することができ、使用条
件に応じて希望する発光色を容易に得ることがで
きる。 As is clear from FIGS. 4A and 4B, when the film thickness ratio between the first light emitting layer and the second light emitting layer is changed, the emission spectrum also changes depending on the film thickness ratio. As the thickness of the light-emitting layer increases, the color of the light emitted from the light-emitting layer becomes stronger, and conversely, as the thickness of the light-emitting layer becomes thinner, the color of light emitted by the light-emitting layer becomes weaker.
Therefore, by controlling and setting the thickness of each layer of the light-emitting layer, it is possible to select and set the mixed color emission spectrum of the EL emission colors generated from each light-emitting layer, and it is possible to easily obtain the desired emission color according to the usage conditions. I can do it.
尚、発光層の積層形態は３層以上の多層構造と
して３色以上の混合色を発光させることも可能で
ある。 Note that the stacked form of the light-emitting layer may be a multilayer structure of three or more layers to emit light of a mixed color of three or more colors.
以上詳説した如く、本発明は発光センターが互
いに独立した領域で励起されるため、発光センタ
ー間の相互干渉がなく、各領域より出射される発
光は発光層の膜厚を制御設定することによりその
強度が適宜決定されることとなり、確実に混合色
発光を得ることができる。また濃度クエンチング
の惧れもない。 As explained in detail above, in the present invention, since the luminescent centers are excited in mutually independent regions, there is no mutual interference between the luminescent centers, and the luminescence emitted from each region is controlled and set by controlling the thickness of the luminescent layer. The intensity is determined appropriately, and mixed color light emission can be reliably obtained. There is also no fear of concentration quenching.
第１図は薄膜EL素子の基本的構造を示す構成
図である。第２図はZnS：Mn、TbF3から成る発
光層の発光スペクトル曲線図である。第３図は本
発明の１実施例を示す薄膜EL素子の基本構成図
である。第４図Ａ，Ｂ，Ｃ，Ｄは本発明の１実施
例の説明に供する発光スペクトル曲線図である。
４ａ……第１の発光層、４ｂ……第２の発光
層。
FIG. 1 is a block diagram showing the basic structure of a thin film EL element. FIG. 2 is an emission spectrum curve diagram of a luminescent layer made of ZnS:Mn, TbF 3 . FIG. 3 is a basic configuration diagram of a thin film EL device showing one embodiment of the present invention. FIGS. 4A, B, C, and D are emission spectrum curve diagrams for explaining one embodiment of the present invention. 4a...first light emitting layer, 4b...second light emitting layer.
Claims (1)
発光を呈する発光層を層厚方向に複数積層し、各
発光層に異なる色のエレクトロルミネセンス発光
を呈する発光センターをそれぞれドープして互い
に異なる発光色を層厚方向に生起させ、各発光色
が混合された混色発光を得るとともに前記各発光
層の層厚を制御して前記混色発光のスペクトルを
選択設定したことを特徴とする薄膜EL素子の構
造。1 A plurality of light-emitting layers that emit electroluminescent light in response to applied voltage are laminated in the layer thickness direction, and each light-emitting layer is doped with a light-emitting center that emit electroluminescent light of a different color to emit light of different colors. A structure of a thin film EL element, characterized in that the spectrum of the mixed color light emission is selectively set by controlling the layer thickness of each light emitting layer, and the layer thickness of each light emitting layer is controlled to obtain mixed color light emission in which each light emitting color is mixed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6522978A JPS54155789A (en) | 1978-05-30 | 1978-05-30 | Structure of thin-film el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6522978A JPS54155789A (en) | 1978-05-30 | 1978-05-30 | Structure of thin-film el element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54155789A JPS54155789A (en) | 1979-12-08 |
| JPS623427B2 true JPS623427B2 (en) | 1987-01-24 |
Family
ID=13280870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6522978A Granted JPS54155789A (en) | 1978-05-30 | 1978-05-30 | Structure of thin-film el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54155789A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56107288A (en) * | 1980-01-30 | 1981-08-26 | Sharp Kk | Thin film light emitting element |
| JPS60124393A (en) * | 1983-12-09 | 1985-07-03 | 日産自動車株式会社 | Method of producing polycolor light emitting thin film el panel |
-
1978
- 1978-05-30 JP JP6522978A patent/JPS54155789A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54155789A (en) | 1979-12-08 |
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