JPH01255802A - multilayer optical element - Google Patents
multilayer optical elementInfo
- Publication number
- JPH01255802A JPH01255802A JP8589588A JP8589588A JPH01255802A JP H01255802 A JPH01255802 A JP H01255802A JP 8589588 A JP8589588 A JP 8589588A JP 8589588 A JP8589588 A JP 8589588A JP H01255802 A JPH01255802 A JP H01255802A
- Authority
- JP
- Japan
- Prior art keywords
- refractive index
- optical element
- multilayer optical
- index layer
- blank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 description 8
- 230000003321 amplification Effects 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000005094 computer simulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000005253 cladding Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Optical Elements Other Than Lenses (AREA)
- Optical Filters (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
「産業上の利用分野」
この発明は、低屈折率層と高屈折率層が両者の境界にお
ける光の反射を強める厚みで交互に形成された多層光学
素子に関する。DETAILED DESCRIPTION OF THE INVENTION "Field of Industrial Application" The present invention relates to a multilayer optical element in which low refractive index layers and high refractive index layers are alternately formed with a thickness that enhances the reflection of light at the boundary between the layers.
「従来の技術」
第５図に示すように、石英やＢＫ−７などの光学ガラス
からなる基板３１上に、それぞれ対象波長領域において
光の吸収の少ない、Ｓ ｉ Ｏｔなどからなる相対的に
屈折率の低い層３２と、Ｔｉ０１などからなる相対的に
屈折率の高い層３３を、全体として１０数層〜２０数層
にわたって交互に形成して、高反射率の反射膜を構成し
たものが考えられている。"Prior Art" As shown in FIG. 5, a relatively refracting glass material such as SiOt, which has low absorption of light in the target wavelength range, is placed on a substrate 31 made of optical glass such as quartz or BK-7. A reflective film with a high reflectance is constructed by alternately forming a layer 32 with a low refractive index and a layer 33 with a relatively high refractive index made of Ti01 or the like in a total of 10 to 20 layers. It is being
「発明が解決しようとする課題」
しかしながら、第５図に示す従来の多層光学素子のよう
に屈折率の異なる物質を交互に被着して反射膜を形成す
るときは、半導体レーザの端面などに反射膜を精度よく
形成するのが難かしい、最近注目されている極短波長領
域では光の吸収の少ない材料を得ることができないため
に反射膜を形成できない、などの不都合がある。``Problems to be Solved by the Invention'' However, when forming a reflective film by alternately depositing materials with different refractive indexes as in the conventional multilayer optical element shown in FIG. There are disadvantages such as it is difficult to form a reflective film with high precision, and it is not possible to form a reflective film in the extremely short wavelength region, which has recently been attracting attention, because it is not possible to obtain a material that absorbs little light.
そこで、この発明は、半導体レーザの端面などにも高反
射率の反射部を精度よく容易に形成することができ、高
反射率の反射部を備えた半導体レーザなどを容易に実現
することができるとともに、極短波長領域を対象波長領
域とする高反射率の反射体ないし反射部をも容易に実現
することができるようにしたものである。Therefore, according to the present invention, it is possible to accurately and easily form a reflective portion with a high reflectance even on the end face of a semiconductor laser, and it is possible to easily realize a semiconductor laser having a reflective portion with a high reflectance. At the same time, it is possible to easily realize a reflector or a reflecting part with a high reflectance whose target wavelength range is an extremely short wavelength range.
「課題を解決するための手段」
この発明においては、低屈折率層と高屈折率層のいずれ
か一方をブランク部にする。"Means for Solving the Problems" In the present invention, either the low refractive index layer or the high refractive index layer is made into a blank portion.
「作 用」
このように構成された、この発明の多層光学素子におい
ては、ブランク部を真空にし、またはブランク部に空気
や適当なガスを存在させることにより、ブランク部から
なる低屈折率層または高屈折率層が極短波長領域を含む
全波長領域において屈折率が１ないしほぼ１の光の吸収
を無視できるものとなり、高い反射率が得られる。"Function" In the multilayer optical element of the present invention configured as described above, the low refractive index layer or The high refractive index layer allows negligible absorption of light having a refractive index of 1 or approximately 1 in the entire wavelength range including the extremely short wavelength range, resulting in a high reflectance.
「実施例」 第１図は、この発明の多層光学素子の一例である。"Example" FIG. 1 shows an example of the multilayer optical element of the present invention.
この例においては、基体１１にスリット構造のブランク
部１２が一定の厚みおよび一定のピッチで多数形成され
、対象波長領域に応じて基体１１の屈折率が１に対して
高低いずれかに選ばれて、ブランク部１２が高屈折率層
または低屈折率層とされ、基体１１のそれぞれのブラン
ク部１２の両側の層状部１３が低屈折率層または高屈折
率層とされる。例えば、基体１１がタングステンで形成
されるときは、ブランク部１２が高屈折率層となり、層
状部１３が低屈折率層となる。ブランク部１２および層
状部１３の厚みは、両者の境界における光の反射を強め
るように、対象波長領域と屈折率に応じて選定される。In this example, a large number of blank parts 12 having a slit structure are formed on the base 11 at a constant thickness and at a constant pitch, and the refractive index of the base 11 is selected to be either higher or lower than 1 depending on the target wavelength region. , the blank portion 12 is made to be a high refractive index layer or a low refractive index layer, and the layered portions 13 on both sides of each blank portion 12 of the base body 11 are made to be a low refractive index layer or a high refractive index layer. For example, when the base body 11 is made of tungsten, the blank part 12 becomes a high refractive index layer and the layered part 13 becomes a low refractive index layer. The thicknesses of the blank part 12 and the layered part 13 are selected according to the target wavelength range and the refractive index so as to strengthen the reflection of light at the boundary between the two.
ブランク部１２は、基体１１へのドライエツチングなど
により、精度よく容易に形成することができる。The blank portion 12 can be easily formed with high accuracy by dry etching the base 11 or the like.
上述の多層光学素子は、その基体１１を真空中または空
気や適当なガス中に保持させる。これにより、ブランク
部１２は極短波長領域を含む全波長領域において屈折率
が１ないしほぼ１となり、ブランク部１２での波長に対
する屈折率の分散および光の吸収は無視できるものとな
って、高い反射率が得られる。The multilayer optical element described above allows its substrate 11 to be kept in vacuum or in air or a suitable gas. As a result, the blank part 12 has a refractive index of 1 or almost 1 in the entire wavelength range including the extremely short wavelength range, and the refractive index dispersion and light absorption with respect to wavelength in the blank part 12 are negligible, resulting in a high Reflectance is obtained.
第２図は、第１図の例の多層光学素子において、基体１
１をタングステンで形成して、ブランク部１２を高屈折
率層とし、層状部１３を低屈折率層とするとともに、ブ
ランク部１２を真空にしたものについて、光の入射角度
をブランク部１２の積層方向である法線方向に対して７
０°にし、波長領域を１０〜１００人にして、極短波長
領域での反射特性をコンピュータ・シミュレーションに
より求めた結果である。また、第３図は、ブランク部１
２の代わりに極短波長領域で光の吸収が少ないとされる
カーボンにより高屈折率層を形成し、他は上述と同じに
した場合の、同じく極短波長領域での反射特性をコンピ
ュータ・シミュレーションにより求めた結果である。FIG. 2 shows the base 1 in the multilayer optical element of the example shown in FIG.
1 is made of tungsten, the blank part 12 is made into a high refractive index layer, the layered part 13 is made into a low refractive index layer, and the blank part 12 is made into a vacuum. 7 with respect to the normal direction, which is the direction
These are the results obtained by computer simulation of the reflection characteristics in the extremely short wavelength region, with the wavelength range being 0° and the wavelength range being 10 to 100 people. In addition, FIG. 3 shows the blank part 1
Computer simulation of the reflection characteristics in the extremely short wavelength region when the high refractive index layer is formed with carbon, which is said to have low absorption of light in the extremely short wavelength region, instead of 2, and the other things are the same as above. This is the result obtained by.
第２図および第３図から明らかなように、ブランク部１
２を高屈折率層とした例の、この発明の多層光学素子の
方が、１０〜１００人の極短波長領域全域で反射率が高
くなる。As is clear from FIGS. 2 and 3, the blank portion 1
The multilayer optical element of the present invention in which layer 2 is a high refractive index layer has a higher reflectance over the entire extremely short wavelength region of 10 to 100.
第４図は、この発明の多層光学素子の他の例で、この発
明を半導体レーザに適用した場合である。FIG. 4 shows another example of the multilayer optical element of the present invention, in which the present invention is applied to a semiconductor laser.
この例においては、半導体からなる基体２１の中央部に
溝２２が形成され、溝２２に臨む基体２１の面２１ａ上
にクラッド層２３、活性層２４、クラッド層２５および
電極２６が順次形成されて、増幅媒質部が構成されると
ともに、この増幅媒質部の両側において基体２１に溝構
造のブランク部２８が一定の厚みおよび一定のピッチで
多数形成されて、ブランク部２８を低屈折率層とし、基
体２１のそれぞれのブランク部２８の両側の層状部２９
を高屈折率層とする反射部が構成される。例えば、Ｇａ
Ａｓ半導体レーザの場合、低屈折率層であるブランク部
２８の屈折率が１ないしほぼ１であるのに対して、高屈
折率層である層状部２９の屈折率は３．６となって、両
者の間に屈折率の大きな差が得られる。ブランク部２８
および層状部２９の厚みは、両者の境界における光の反
射を強めるように、対象波長領域と屈折率に応じて選定
される。In this example, a groove 22 is formed in the center of a substrate 21 made of a semiconductor, and a cladding layer 23, an active layer 24, a cladding layer 25, and an electrode 26 are sequentially formed on a surface 21a of the substrate 21 facing the groove 22. , an amplification medium section is constructed, and a large number of blank sections 28 having a groove structure are formed on the base 21 on both sides of the amplification medium section at a constant thickness and at a constant pitch, and the blank sections 28 are made into low refractive index layers, Layered portions 29 on both sides of each blank portion 28 of the base body 21
A reflective section is configured with the high refractive index layer. For example, Ga
In the case of an As semiconductor laser, the refractive index of the blank portion 28, which is a low refractive index layer, is 1 or approximately 1, whereas the refractive index of the layered portion 29, which is a high refractive index layer, is 3.6. A large difference in refractive index is obtained between the two. Blank part 28
The thickness of the layered portion 29 is selected depending on the target wavelength region and the refractive index so as to strengthen the reflection of light at the boundary between the two.
反射部は、増幅媒質部を形成したのちドライエツチング
などにより基体２１にブランク部２８を形成することに
より、精度よく容易に形成することができる。The reflecting section can be easily and accurately formed by forming a blank section 28 on the base 21 by dry etching or the like after forming the amplification medium section.
この例においても、基体２１を真空中または適当なガス
中に保持させることにより、反射部において高い反射率
が得られる。そして、この例においては、増幅媒質部の
両側に高反射率の反射部が設けられることにより、レー
ザ光が増幅媒質部近辺に効率よく閉じ込められて伝搬す
る。In this example as well, by keeping the base 21 in vacuum or in an appropriate gas, a high reflectance can be obtained in the reflective portion. In this example, reflective parts with high reflectance are provided on both sides of the amplification medium part, so that the laser light is efficiently confined and propagated in the vicinity of the amplification medium part.
「発明の効果Ｊ
この発明によれば、半導体レーザの端面などにも高反射
率の反射部を精度よく容易に形成することができ、高反
射率の反射部を備えた半導体レーザなどを容易に実現す
ることができるとともに、極短波長領域を対象波長領域
とする高反射率の反射体ないし反射部をも容易に実現す
ることができる。"Effect of the Invention J According to this invention, it is possible to easily form a reflective part with high reflectance even on the end face of a semiconductor laser with high precision, and it is possible to easily form a semiconductor laser etc. equipped with a reflective part with a high reflectance. In addition, it is also possible to easily realize a reflector or a reflecting part with a high reflectance whose target wavelength range is an extremely short wavelength range.
第１図はこの発明の多層光学素子の一例を示す斜視図、
第２図は第１図の素子で基体をタングステンにしたとき
のコンピュータ・シミュレーシヨンによる反射特性の結
果を示す図、第３図は第１図の素子のブランク部をカー
ボンにより形成された高屈折率層に代えた場合について
のコンピュータ・シミニレ−ジョンによる反射特性の結
果を示す図、第４図はこの発明の多層光学素子の他の例
である半導体レーザを示す断面図、第５図は従来の多層
光学素子を示す断面図である。FIG. 1 is a perspective view showing an example of the multilayer optical element of the present invention;
Figure 2 shows the results of a computer simulation of the reflection characteristics of the element shown in Figure 1 when the base is made of tungsten. FIG. 4 is a cross-sectional view showing a semiconductor laser which is another example of the multilayer optical element of the present invention, and FIG. 5 is a conventional one. FIG. 2 is a cross-sectional view showing a multilayer optical element of FIG.
Claims (1)
の反射を強める厚みで交互に形成された多層光学素子に
おいて、 上記低屈折率層と上記高屈折率層のいずれか一方がブラ
ンク部にされた多層光学素子。(1) In a multilayer optical element in which low refractive index layers and high refractive index layers are alternately formed with a thickness that strengthens light reflection at the boundary between the two, one of the low refractive index layer and the high refractive index layer is Multilayer optical element made into a blank section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8589588A JPH01255802A (en) | 1988-04-06 | 1988-04-06 | multilayer optical element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8589588A JPH01255802A (en) | 1988-04-06 | 1988-04-06 | multilayer optical element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01255802A true JPH01255802A (en) | 1989-10-12 |
| JPH0529881B2 JPH0529881B2 (en) | 1993-05-06 |
Family
ID=13871618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8589588A Granted JPH01255802A (en) | 1988-04-06 | 1988-04-06 | multilayer optical element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01255802A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5070039A (en) * | 1973-03-14 | 1975-06-11 |
-
1988
- 1988-04-06 JP JP8589588A patent/JPH01255802A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5070039A (en) * | 1973-03-14 | 1975-06-11 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0529881B2 (en) | 1993-05-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |