JPH0529881B2 - - Google Patents
Info
- Publication number
- JPH0529881B2 JPH0529881B2 JP63085895A JP8589588A JPH0529881B2 JP H0529881 B2 JPH0529881 B2 JP H0529881B2 JP 63085895 A JP63085895 A JP 63085895A JP 8589588 A JP8589588 A JP 8589588A JP H0529881 B2 JPH0529881 B2 JP H0529881B2
- Authority
- JP
- Japan
- Prior art keywords
- refractive index
- index layer
- optical element
- blank
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003287 optical effect Effects 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 description 8
- 230000003321 amplification Effects 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 238000005094 computer simulation Methods 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Optical Elements Other Than Lenses (AREA)
- Optical Filters (AREA)
Description
【発明の詳細な説明】
「産業上の利用分野」
この発明は、低屈折率層と高屈折率層が両者の
境界における光の反射を強める厚みで交互に形成
された多層光学素子に関する。DETAILED DESCRIPTION OF THE INVENTION "Field of Industrial Application" The present invention relates to a multilayer optical element in which low refractive index layers and high refractive index layers are alternately formed with a thickness that enhances the reflection of light at the boundary between the layers.
「従来の技術」
第５図に示すように、石英やBK−７などの光
学ガラスからなる基板３１上に、それぞれ対象波
長領域において光の吸収の少ない、SiO2などか
らなる相対的に屈折率の低い層３２と、TiO2な
どからなる相対的に屈折率の高い層３３を、全体
として10数層〜20数層にわたつて交互に形成し
て、高反射率の反射膜を構成したものが考えられ
ている。``Prior art'' As shown in FIG. 5, a substrate 31 made of optical glass such as quartz or BK-7 is coated with a material having a relatively refractive index made of SiO 2 or the like, which has low absorption of light in the target wavelength range. A reflective film with a high reflectance is constructed by alternately forming a layer 32 with a low refractive index and a layer 33 with a relatively high refractive index made of TiO 2 or the like in a total of 10 to 20 layers. is being considered.
「発明が解決しようとする課題」
しかしながら、第５図に示す従来の多層光学素
子のように屈折率の異なる物質を交互に被着して
反射膜を形成するときは、半導体レーザの端面な
どに反射膜を精度よく形成するのが難かしい、最
近注目されている極短波長領域では光の吸収の少
ない材料を得ることができないために反射膜を形
成できない、などの不都合がある。``Problems to be Solved by the Invention'' However, when forming a reflective film by alternately depositing materials with different refractive indexes as in the conventional multilayer optical element shown in FIG. There are disadvantages such as it is difficult to form a reflective film with high precision, and it is not possible to form a reflective film in the extremely short wavelength region, which has recently been attracting attention, because it is not possible to obtain a material that absorbs little light.
そこで、この発明は、半導体レーザの端面など
にも高反射率の反射部を精度よく容易に形成する
ことができ、高反射率の反射部を備えた半導体レ
ーザなどを容易に実現することができるととも
に、極短波長領域を対象波長領域とする高反射率
の反射体ないし反射部をも容易に実現することが
できるようにしたものである。 Therefore, according to the present invention, it is possible to accurately and easily form a reflective portion with a high reflectance even on the end face of a semiconductor laser, and it is possible to easily realize a semiconductor laser having a reflective portion with a high reflectance. At the same time, it is possible to easily realize a reflector or a reflecting part with a high reflectance whose target wavelength range is an extremely short wavelength range.
「課題を解決するための手段」
この発明においては、基体に同一厚さ、同一ピ
ツチで複数の層状スリツトを平行に形成し、これ
らスリツト部分を、これに固体および液体を充填
することなく低屈折率層と高屈折率層の一方と
し、その他方を上記スリツト間の層状部分とす
る。"Means for Solving the Problem" In the present invention, a plurality of layered slits are formed in parallel with the same thickness and the same pitch on a substrate, and these slit portions are made to have a low refractive index without being filled with solid or liquid. one of the index layer and the high refractive index layer, and the other is the layered portion between the slits.
「作用」
このように構成された、この発明の多層光学素
子においては、固体および液体が充填されないス
リツト部分（以下、ブランク部という）を真空に
し、またはブランク部に空気や適当なガスを存在
させることにより、ブランク部からなる低屈折率
層または高屈折率層が極短波長領域を含む全波長
領域において屈折率が１ないしほぼ１の光の吸収
を無視できるものとなり、高い反射率が得られ
る。"Operation" In the multilayer optical element of the present invention configured as described above, the slit part (hereinafter referred to as the blank part) which is not filled with solid or liquid is evacuated, or air or a suitable gas is made to exist in the blank part. As a result, the low refractive index layer or high refractive index layer consisting of the blank portion can ignore the absorption of light with a refractive index of 1 or almost 1 in the entire wavelength range including the extremely short wavelength range, and a high reflectance can be obtained. .
「実施例」
第１図は、この発明の多層光学素子の一例であ
る。"Example" FIG. 1 is an example of a multilayer optical element of the present invention.
基体１１にスリツト構造のブランク部１２が一
定の厚みおよび一定のピツチで多数層状かつ平行
に形成され、対象波長領域に応じて基体１１の屈
折率が１に対して高低いずれかに選ばれて、ブラ
ンク部１２が高屈折率層または低屈折率層とさ
れ、基体１１のそれぞれのブランク部１２の両側
の層状部１３が低屈折率層または高屈折率層とさ
れる。例えば、基体１１がタングステンで形成さ
れるときは、ブランク部１２が高屈折率層とな
り、層状部１３が低屈折率層となる。ブランク部
１２および層状部１３の厚みは、両者の境界にお
ける光の反射を強めるように、対象波長領域と屈
折率に応じて選定される。 A number of blank portions 12 having a slit structure are formed on the base body 11 in parallel layers with a constant thickness and a constant pitch, and the refractive index of the base body 11 is selected to be either high or low with respect to 1 depending on the target wavelength region. The blank portion 12 is a high refractive index layer or a low refractive index layer, and the layered portions 13 on both sides of each blank portion 12 of the base body 11 are a low refractive index layer or a high refractive index layer. For example, when the base body 11 is made of tungsten, the blank part 12 becomes a high refractive index layer and the layered part 13 becomes a low refractive index layer. The thicknesses of the blank part 12 and the layered part 13 are selected according to the target wavelength range and the refractive index so as to strengthen the reflection of light at the boundary between the two.
ブランク部１２は、基体１１へのドライエツチ
ングなどにより、精度よく容易に形成することが
できる。 The blank portion 12 can be easily formed with high accuracy by dry etching the base 11 or the like.
上述の多層光学素子は、その基体１１を真空中
または空気や適当なガス中に保持させる。これに
より、ブランク部１２は極短波長領域を含む全波
長領域において屈折率が１ないしほぼ１となり、
ブランク部１２での波長に対する屈折率の分散お
よび光の吸収は無視できるものとなつて、高い反
射率が得られる。 The multilayer optical element described above allows its substrate 11 to be kept in vacuum or in air or a suitable gas. As a result, the blank portion 12 has a refractive index of 1 or approximately 1 in the entire wavelength range including the extremely short wavelength range,
Dispersion of the refractive index with respect to wavelength and absorption of light in the blank portion 12 can be ignored, and a high reflectance can be obtained.
第２図は、第１図の例の多層光学素子におい
て、基体１１をタングステンで形成して、ブラン
ク部１２を高屈折率層とし、層状部１３を低屈折
率層とするとともに、ブランク部１２を真空にし
たものについて、光の入射角度をブランク部１２
の積層方向である法線方向に対して70゜にし、波
長領域を10〜100Åにして、極短波長領域での反
射特性をコンピユータ・シミユレーシヨンにより
求めた結果である。また、第３図は、ブランク部
１２の代わりに極短波長領域で光の吸収が少ない
とされるカーボンにより高屈折率層を形成し、他
は上述と同じにした場合の、同じく極短波長領域
での反射特性をコンピユータ・シミユレーシヨン
により求めた結果である。 FIG. 2 shows the multilayer optical element of the example shown in FIG. 1 in which the base 11 is made of tungsten, the blank part 12 is a high refractive index layer, the layered part 13 is a low refractive index layer, and the blank part 12 is a high refractive index layer. For those that are evacuated, the incident angle of light is set to the blank part 12.
The reflection characteristics in the extremely short wavelength region were determined by computer simulation at an angle of 70° with respect to the normal direction, which is the stacking direction, and the wavelength region was set to 10 to 100 Å. FIG. 3 also shows a case where a high refractive index layer is formed using carbon, which is said to have low absorption of light in the extremely short wavelength region, instead of the blank portion 12, and the other conditions are the same as above. These are the results obtained by computer simulation of the reflection characteristics in the area.
第２図および第３図から明らかなように、ブラ
ンク部１２を高屈折率層とした例の、この発明の
多層光学素子の方が、10〜100Åの極短波長領域
全域で反射率が高くなる。 As is clear from FIGS. 2 and 3, the multilayer optical element of the present invention in which the blank portion 12 is a high refractive index layer has a higher reflectance over the entire extremely short wavelength region of 10 to 100 Å. Become.
第４図は、この発明の多層光学素子の他の例
で、この発明を半導体レーザに適用した場合であ
る。 FIG. 4 shows another example of the multilayer optical element of the present invention, in which the present invention is applied to a semiconductor laser.
この例においては、半導体からなる基体２１の
中央部に溝２２が形成され、溝２２に臨む基体２
１の面２１ａ上にクラツド層２３、活性層２４、
クラツド層２５および電極２６が順次形成され
て、増幅媒質部が構成されるとともに、この増幅
媒質部の両側において基体２１に溝構造のブラン
ク部２８が一定の厚みおよび一定のピツチで多数
形成されて、ブランク部２８を低屈折率層とし、
基体２１のそれぞれのブランク部２８の両側の層
状部２９を高屈折率層とする反射部が構成され
る。例えば、GaAs半導体レーザの場合、低屈折
率層であるブランク部２８の屈折率が１ないしほ
ぼ１であるのに対して、高屈折率層である層状部
２９の屈折率は3.6となつて、両者の間に屈折率
の大きな差が得られる。ブランク部２８および層
状部２９の厚みは、両者の境界における光の反射
を強めるように、対象波長領域と屈折率に応じて
選定される。 In this example, a groove 22 is formed in the center of a base 21 made of a semiconductor, and the base 21 facing the groove 22
A cladding layer 23, an active layer 24,
A cladding layer 25 and an electrode 26 are sequentially formed to constitute an amplification medium section, and a large number of groove-shaped blank sections 28 are formed on both sides of the amplification medium section at a constant thickness and a constant pitch on the base body 21. , the blank portion 28 is a low refractive index layer,
A reflective portion is constructed in which the layered portions 29 on both sides of each blank portion 28 of the base body 21 are high refractive index layers. For example, in the case of a GaAs semiconductor laser, the refractive index of the blank portion 28, which is a low refractive index layer, is 1 or approximately 1, whereas the refractive index of the layered portion 29, which is a high refractive index layer, is 3.6. A large difference in refractive index is obtained between the two. The thicknesses of the blank portion 28 and the layered portion 29 are selected according to the target wavelength range and the refractive index so as to strengthen the reflection of light at the boundary between the two.
反射部は、増幅媒質部を形成したのちドライエ
ツチングなどにより基体２１にブランク部２８を
形成することにより、精度よく容易に形成するこ
とができる。 The reflecting section can be easily and accurately formed by forming a blank section 28 on the base 21 by dry etching or the like after forming the amplification medium section.
この例においても、基体２１を真空中または適
当なガス中に保持させることにより、反射部にお
いて高い反射率が得られる。そして、この例にお
いては、増幅媒質部の両側に高反射率の反射部が
設けられることにより、レーザ光が増幅媒質部近
辺に効率よく閉じ込められて伝搬する。 In this example as well, by keeping the base 21 in vacuum or in an appropriate gas, a high reflectance can be obtained in the reflective portion. In this example, reflective parts with high reflectance are provided on both sides of the amplification medium part, so that the laser light is efficiently confined and propagated in the vicinity of the amplification medium part.
「発明の効果」
この発明によれば、半導体レーザの端面などに
も高反射率の反射部を精度よく容易に形成するこ
とができ、高反射率の反射部を備えた半導体レー
ザなどを容易に実現することができるとともに、
極短波長領域を対象波長領域とする高反射率の反
射体ないし反射部をも容易に実現することができ
る。"Effects of the Invention" According to the present invention, it is possible to easily form a reflective part with a high reflectance even on the end face of a semiconductor laser with high precision, and it is possible to easily form a semiconductor laser etc. equipped with a reflective part with a high reflectance. In addition to being able to realize
It is also possible to easily realize a reflector or a reflecting part with a high reflectance whose target wavelength range is an extremely short wavelength range.
第１図はこの発明の多層光学素子の一例を示す
斜視図、第２図は第１図の素子で基体をタングス
テンにしたときのコンピユータ・シミユレーシヨ
ンによる反射特性の結果を示す図、第３図は第１
図の素子のブランク部をカーボンにより形成され
た高屈折率層に代えた場合についてのコンピユー
タ・シミユレーシヨンによる反射特性の結果を示
す図、第４図はこの発明の多層光学素子の他の例
である半導体レーザを示す断面図、第５図は従来
の多層光学素子を示す断面図である。
Figure 1 is a perspective view showing an example of the multilayer optical element of the present invention, Figure 2 is a diagram showing the results of computer simulation of the reflection characteristics of the element shown in Figure 1 when the base is made of tungsten, and Figure 3 is 1st
Figure 4 is a diagram showing the results of computer simulation of the reflection characteristics when the blank part of the element shown in the figure is replaced with a high refractive index layer made of carbon. Figure 4 is another example of the multilayer optical element of the present invention. FIG. 5 is a cross-sectional view showing a semiconductor laser, and FIG. 5 is a cross-sectional view showing a conventional multilayer optical element.
Claims (1)
る光の反射を強める厚みで交互に形成された多層
光学素子において、 基体に同一厚さ、同一ピツチで複数の層状スリ
ツトが平行に形成され、これらのスリツト部分
が、これに固体および液体が充填されることなく
上記低屈折率層と上記高屈折率層の一方とされ、
その他方が上記スリツト間の層状部分とされた多
層光学素子。[Claims] 1. In a multilayer optical element in which low refractive index layers and high refractive index layers are alternately formed with a thickness that strengthens light reflection at the boundary between the layers, a plurality of layers with the same thickness and the same pitch are formed on the base body. slits are formed in parallel, and these slit portions serve as one of the low refractive index layer and the high refractive index layer without being filled with solid or liquid,
A multilayer optical element, the other of which is a layered portion between the slits.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8589588A JPH01255802A (en) | 1988-04-06 | 1988-04-06 | multilayer optical element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8589588A JPH01255802A (en) | 1988-04-06 | 1988-04-06 | multilayer optical element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01255802A JPH01255802A (en) | 1989-10-12 |
| JPH0529881B2 true JPH0529881B2 (en) | 1993-05-06 |
Family
ID=13871618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8589588A Granted JPH01255802A (en) | 1988-04-06 | 1988-04-06 | multilayer optical element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01255802A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5070039A (en) * | 1973-03-14 | 1975-06-11 |
-
1988
- 1988-04-06 JP JP8589588A patent/JPH01255802A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5070039A (en) * | 1973-03-14 | 1975-06-11 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01255802A (en) | 1989-10-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |