JPH01125853A - Method for manufacturing leads in semiconductor devices - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed Description of the Invention] [Summary] In order to prevent crosstalk regarding leads in a semiconductor device, a substrate forming process in which the upper and lower plates constituting the substrate of an IC package are formed using green sheets. , a shielding thin film forming step of patterning conductive information +1'2 for shielding the leads at a position where the leads are sandwiched between the upper plate and the lower plate;
Conductive information II formed by the shield thin film forming step
a pressing step of pressing and deforming the conductive thin film into a gutter shape; an insulating material filling step of filling the inner curved surface of the conductive thin film formed into a gutter shape by the pressing step with an insulating material; A lead forming step of forming a lead on at least one of the insulating materials filled in the lower plate, and a conductive Fi film formed on the upper plate and the lower plate after the lead forming step, respectively. A conductive material that surrounds and includes a bonding step of bonding the lower plate and the upper plate, or a lead provided within a ceramic package to which an IC chip is attached, and a conductive material that covers the lead via an insulating material. Contains and consists of materials.

[Industrial application field]

The present invention relates to a lead structure in a semiconductor device and a manufacturing method thereof.

[Conventional technology]

When forming leads on an IC package using a ceramic substrate or the like, for example, as shown in FIG. d.

[Problem that the invention seeks to solve]

However, as ICs become more highly integrated, the number of electrodes within an IC chip increases, and crosstalk is likely to occur between the leads connected to these electrodes, causing problems such as malfunction of semiconductor devices. .

The present invention has been made in view of such problems, and provides leads in semiconductor devices that do not cause crosstalk.
The purpose is to provide a method for producing the same.

[Means for solving problems]

The above purpose is to form a lead in a semiconductor device in which an IC chip is mounted in a ceramic package surrounded by a conductive material via an insulating material, or a substrate in which the upper and lower plates constituting the substrate of an IC package are formed using green sheets. a shield thin film forming step of patterning a conductive thin film that shields the lead at a position where the lead is sandwiched between the upper plate and the lower plate; and a conductive thin film formed by the shield thin film forming step. A pressing step of pressing and deforming the conductive thin film into a shape, an insulating material filling step of filling the inner curved surface of the conductive thin film formed into a gutter shape by the pressing step with an insulating material, and a base material filling step of the above-mentioned upper plate and the above-mentioned lower plate. a lead forming step of forming a lead on at least one of the insulating materials filled in the insulating material, and surrounding the lead with the conductive thin film formed on the upper plate and the lower plate, respectively, which have undergone the lead forming step; This is achieved by a method for manufacturing leads in a semiconductor device, which includes a bonding step of bonding the lower plate and the upper plate.

[For production]

That is, in the present invention, an upper plate and a lower plate constituting the substrate of an IC package are formed in a substrate forming process, and a conductive thin film for forming a shield is formed on each of these opposing surfaces in a shielding thin film forming process. .

Then, this conductive F4 film is pressed in a pressing process to form a gutter-shaped shield, and its inner curved surface is filled with an insulating material in an insulation treatment process, and at least one of the upper plate and the lower plate is insulated. Form a lead on top.

Furthermore, the shields of the upper and lower plates are integrally fitted together, and the upper and lower plates are joined together.

On the other hand, when a current flows through a lead, it is electrically blocked by the shield, so that no electromagnetic induction or line capacitance is generated in other leads.

〔Example〕

(a) Description of one embodiment Figures 1 to 3 show an embodiment of the present invention, and reference numeral 1 in the figure indicates a substrate used for an IC package, for example, an insulating material such as alumina or glass ceramic. The substrate 1 is made of ceramic, and includes an upper plate 3 having a chip storage section 2 bored in the center, and a lower plate 4 joined to the lower surface of the upper plate 3.

A gutter-shaped groove 5 is provided on the lower surface of the upper plate 3 and the upper surface of the lower plate 4.
．． A plurality of shields 6, 7, etc. made of conductive material such as tungsten paste, molybdenum/manganese paste, etc. are provided on the inner curved surface, and the inside is made of insulating material such as polyimide or glass. Further, on the insulating material 8 of at least one of the upper plate 3 and the lower plate 4, a metallized metallization material 9 of gold, silver, copper, etc. is formed, and the shield 6. .7 is integrally joined and is configured to surround the lead 9 with an insulating material 8 interposed therebetween.

10... are lead pins held between the upper plate 3 and the lower plate 4, and are attached at positions where they come into contact with the outer ends of the leads 9....

In the figure, reference numerals 11, . . . are through-hole electrodes that are electrically connected to the inner ends of the leads 9, 12 are IC chips, and 13 are
A wire connecting the through-hole electrode 11 and the electrode of the IC chip 12 is shown.

In the embodiment described above, the current flowing through the lead 9 is electrically blocked by the shield 6.7, so that no electromagnetic induction or line capacitance is generated in other leads 9.

Next, the production of the shield 6.7 and lead 9 described above will be explained along the steps shown in FIG. 4.5.

Before firing the ceramic, for example in a plastic state generally called a green sheet, this green sheet is formed into the size of the upper plate 3 and lower plate 4 of the package substrate Fi1 (FIG. 4A).

Then, a resist 1 is applied to the upper surface of the lower plate 4 in this green sheet state, except for the part where the shield 7 is to be formed.
4), and then a conductive thin film 15 of tungsten paste, molybdenum/manganese paste or the like is metalized by sputtering, vacuum evaporation, etc. (FIG. 5b).

Next, when the resist 14 is removed by the lift-off method, only the conductive material thin film 15 remains in the area where the shield 7 is to be formed (Figure 4, Figure 5 C). When the protrusion 16a is pressed against the conductive GI film 15 using the press member 16 having the protrusion 16a,
The lower plate 4 is pressed to form a groove 5 on its surface, and the conductive thin film 1215 becomes gutter-shaped to form the shield 7 (FIGS. 4C and 5D).

Therefore, while leaving both ends of this gutter-shaped shield 7 exposed on the upper surface of the lower plate 4, the inner curved surface of the shield 7 was filled with an insulating material 8 such as alumina or polyimide (Fig. 4, Fig. 5 e). Furthermore, after forming the resist film 16 uniformly on the lower plate 4, in order to form the leads 9 that do not touch both ends of the shield 7, pattern grooves 17 for lead formation are formed along the center of the top of the insulating member 8 in the resist film 1vc16. (Fig. 5f).

Here, after metallizing the lower plate 4 with a conductive material 18 (FIG. 5g), a resist film 16 is formed by a lift-off method.
When removed, the conductive material 18 remains in a non-contact state between both ends of the trough-shaped shield 7, and is used as the lead 9 (FIG. 4(e), FIG. 5(h)).

On the other hand, a gutter-shaped shield 6 is formed on the lower surface of the upper plate 3 through the same process as the lower plate 4, and the inside thereof is filled with an insulating material 8 (see FIG. 4).

After the above steps are completed, both ends of the shield 6 of the upper plate 3 are brought into contact with both ends of the shield 7 of the lower plate 4, with the lead bin 10 placed on the leads 9 of the lower plate 4. Finally, the upper plate 3 and the lower plate 4 are fired to complete the fabrication of the package substrate 1 (Fig. 4, Fig. 5). i).

The through-hole electrodes 11 are formed by providing a through-hole in the vicinity of the IC chip accommodating portion 2 of the upper plate 3 immediately before or after forming the shield 6 on the upper plate 3, and filling the through-hole with a conductive material. It is formed.

(b) Description of other embodiments In the above embodiments, leads using a ceramic substrate have been described, but the present invention can also be applied to a resin substrate. In this case, it goes without saying that the step of firing the substrate is omitted.

〔Effect of the invention〕

As described above, according to the present invention, a shield is attached via an insulating material around the leads attached to the IC pancage, so that when a large current flows through the leads,
It can be electrically interrupted by a shield, and electromagnetic induction and line capacitance generated in other leads can be eliminated.

[Brief explanation of the drawing]

1 to 3 are a plan view, a sectional view, and a perspective view of an embodiment of the present invention; FIG. 4 is a flowchart showing a manufacturing method of the present invention; and FIG. 5 is a fabrication method according to the above method. FIG. 6 is a sectional view showing a lead of a conventional device. (Explanation of symbols) 1...Package board, 3...Top plate, 4...Lower plate, 6.7...Shield, 8...Insulating material, 9...Lead, 11... -Through hole, 14...Resist, 15.18...Conductive material, 16...Resist film. Φ K トゝ■ ト■ no8 which/l ■ ba)

Claims (2)

[Claims] (1) A lead (9) is embedded in the ceramic package (1) to which the IC chip (12) is attached, and the lead (9) is connected to the conductive material (6,
7) A lead in a semiconductor device characterized by being surrounded by. (2) A substrate forming process in which the upper and lower plates constituting the substrate of the IC package are formed from green sheets, and a conductive thin film is placed at a position where the leads are sandwiched between the upper plate and the lower plate to shield the leads. a step of forming a shield thin film by patterning; a pressing step of pressing and deforming the conductive thin film formed in the shield thin film forming step into a trough shape; a lead forming step of forming a lead in at least one of the insulating materials filled in the upper plate and the lower plate through the insulating material filling step; A method for manufacturing leads in a semiconductor device, comprising a bonding step of surrounding the leads with the conductive thin films formed on the upper plate and the lower plate, respectively, and bonding the lower plate and the upper plate.