JPH01102982A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH01102982A JPH01102982A JP26082687A JP26082687A JPH01102982A JP H01102982 A JPH01102982 A JP H01102982A JP 26082687 A JP26082687 A JP 26082687A JP 26082687 A JP26082687 A JP 26082687A JP H01102982 A JPH01102982 A JP H01102982A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductivity type
- type
- active layer
- larger
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 238000005253 cladding Methods 0.000 claims description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 18
- 239000013078 crystal Substances 0.000 abstract description 6
- 230000007246 mechanism Effects 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract 1
- 229910016920 AlzGa1−z Inorganic materials 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 241001519271 Ajuga Species 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003889 chemical engineering Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- BLJHFCVPKWOHJX-UHFFFAOYSA-N ethylgallium Chemical compound CC[Ga] BLJHFCVPKWOHJX-UHFFFAOYSA-N 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、単一横モードで発振するＡＩＧａＩｎＰ系の
半導体レーザ装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an AIGaInP semiconductor laser device that oscillates in a single transverse mode.
最近、肩磯金属熱分解法（以ＩＭＯＶＰＷと略す）によ
る結晶成長により形成された単一横モードで発振するＡ
ＪＧａｌｎＰ系の半導体レーザ装置として、第３図に示
すような構造が報告されている（ Ｅｘｔｅｎｄｅｄ
ＡｂＳｔｒａＣｌＳ ｏｆ ｔｈｅ ＩＢｔｈ ｅｏｎ
−ｆｅｒｅｎｃｅ ｏｎ ８ｏ１ｉｄ ５ｔａｔｅ Ｄ
ｅｖｉｃｅｓ ａｎｄ Ｍａｔｅｒｉ−ａｌ ｓ 、ｉ
”ｏｋｙｏ 、 １９８６ 、ｐｐ 、１５３−１５６
）。このＳ造は、第１回目の成長でｎ型ＧａＡｓ基板
ｌｌ上に、ｎ型（λｌｏ、ｓ Ｇａｏ、ｓ）ｏ、ｓ ｘ
ｎ６．４Ｉ Ｐクラッド庖１４．ｐ型Ｌ１ａＡｓキャッ
プ層１７を順次形成する。次にフォトリングラフィによ
Ｊ、Ｓ ｉ Ｏ，をマスクとして、ｐ型ＵａＡｓキ’ｒ
ｙプ層１７とｐ 型（Ａｌｏ、ｓＧａ（、、、）ｏ、ｓ
ｘｎＯ，４１Ｐ １４を工、チングしてメｆ、＊）ラ
イブを形成する。そして、８１０！マスクをつけたまま
、第２回目の成長を行ない工、チングしたところにｎ型
Ｇ ａ Ａ ｓ Ｐ、ｉ １８を成長してメサストライ
プをｎ型ＧａＡｓ層１８で埋め込む。次に８１０２マス
クを除去し、ｐ側全面に電極が形成できるように第３回
目の成長でｐ型ＧａＡｓコンタクト層１９を成長する。Recently, a single transverse mode oscillating A
The structure shown in Figure 3 has been reported as a JGalnP-based semiconductor laser device (Extended
AbStraClS of the IBth eon
-ference on 8o1id 5tate D
evices and Materials, i
"Okyo, 1986, pp, 153-156
). In the first growth, this S structure is grown on an n-type GaAs substrate 11 with n-type (λlo, s Gao, s) o, s x
n6.4I P clad plate 14. A p-type L1aAs cap layer 17 is sequentially formed. Next, by photolithography, using J, SiO, as a mask, p-type UaAs crystals were formed.
Yp layer 17 and p type (Alo, sGa(,,,)o,s
xnO, 41P 14 to form f, *) live. And 810! A second growth is performed with the mask on, and n-type GaAs P,i 18 is grown on the etched area to bury the mesa stripe with the n-type GaAs layer 18. Next, the 8102 mask is removed, and a p-type GaAs contact layer 19 is grown in a third growth so that an electrode can be formed on the entire p-side surface.
この構造によシミ流はｎ型ＧａＡｓ層１８によりブロッ
クされメサストライプ部にのみ注入される。また、メサ
ストライプ形成のエツチングのときに、メサストライプ
部以外のｐ型クラッド層の厚みを光のとじ込めには不十
分な厚みにまで工。With this structure, the stain flow is blocked by the n-type GaAs layer 18 and is injected only into the mesa stripe portion. In addition, when etching to form mesa stripes, the thickness of the p-type cladding layer other than the mesa stripe area was etched to a thickness insufficient to trap light.
チングするのでｎ型ＧａＡｓ層１８のある部分では、こ
のｎ型ＧａＡｓ層１８に光が吸収され、メサストライプ
部のみ光は導波される。このようにこの構造では、電流
狭窒機構と光導波機構が同時につく９つけられる。Because of this, light is absorbed by the n-type GaAs layer 18 in a certain portion of the n-type GaAs layer 18, and the light is guided only in the mesa stripe portion. In this way, in this structure, the current narrowing mechanism and the optical waveguide mechanism can be installed at the same time.
この構造の光導痕は１本質的にはｎ型ＧａＡｓ層１８に
おける吸収によっておこなわれる。そのため、レーザ光
は一部ＧａＡｓ層１８に吸収されるためレーザの発振閾
値が比較的高いほか、レーザが高光出力で動作すると、
ＧａＡｓ＃１８が高い電子励起状態におかれるため吸収
が飽和する現象が起こる。そのため横モード制御が不安
定になる欠点があった。本発明の目的は、この問題点を
解決した半導体レーザ装置を提供することにある。The optical trace in this structure is essentially caused by absorption in the n-type GaAs layer 18. Therefore, a portion of the laser light is absorbed by the GaAs layer 18, so the oscillation threshold of the laser is relatively high, and when the laser operates at high optical output,
Since GaAs #18 is placed in a highly electronically excited state, a phenomenon occurs in which absorption is saturated. Therefore, there was a drawback that the transverse mode control became unstable. An object of the present invention is to provide a semiconductor laser device that solves this problem.
第一の導電性を鳴するＧａＡｓ１！＃板上に、この基板
に格子整合するＣｋｌｘＧａｒ−ｘ）ｏ、ｓ Ｉｎｏ、
ｓ Ｐからなる活性層と、この活性層を挾む（ＡｌｙＧ
ａ ｌ−７）０．５Ｉｎ６４Ｐ（ｘ（ｙ）からなるクラ
ッド層により形成されたダブルヘテロ構造を設け１ｍ２
導電型クラッド層上に、ストライプ状に第２の導電型（
ＡＩ。GaAs1 exhibits the first conductivity! #CklxGar-x) o, s Ino, lattice matched to this substrate on the board
An active layer consisting of sP and an active layer sandwiching this active layer (AlyG
a l-7) A double heterostructure formed by a cladding layer consisting of 0.5In64P (x(y)) was provided for 1 m2
The second conductivity type (
A.I.
Ｇａ Ｉ−ｇ ）ｏ、ｓ Ｉｎｏ、ｓ Ｐ （Ｘ ＜
Ｚ ）を設け、同じく第２の導電型クラッド層上の前記
ストライプ部分を除く部分に、第一の導１性或いは高低
抵抗を有し且つ前記（ＡＩ、 Ｇａ ｔ−、）ｅ、ｓ
Ｉ ｎｏ、ｓ Ｐの屈折率よりも大なる屈折率を有し且
２活性層（ＡＪｘＧａ、−８）ｏ、５Ｉｎ６．５ Ｐ
ｊ ｐバンドギャップの大なる組成を有するＡｌｕＧａ
、−ｕＡｓを少なくとも設けて成ることを特徴としてい
る。Ga I-g ) o, s Ino, s P (X <
Z ), which also has the first conductivity or high/low resistance on the second conductivity type cladding layer except for the stripe part, and has the above (AI, Ga t-, )e, s
I no,s has a refractive index larger than that of P and has two active layers (AJxGa, -8)o,5In6.5P
AluGa with a large p bandgap composition
, -uAs.
上述の本発明の構成を用いると、電流狭９についてはｎ
型ＡＪ、ＧａＡｓを用いれば従来と同一機構である。ま
た、ＡＪを含むＡＪＧａＡｓ結晶を用いるため、特に高
抵抗層が得やすく、高抵抗ＡｌＧａＡ３を用いれば電流
狭搾がよシ容易に実現できる。Using the configuration of the present invention described above, for the current narrow 9, n
If type AJ and GaAs are used, the mechanism is the same as the conventional one. In addition, since AJGaAs crystal containing AJ is used, it is particularly easy to obtain a high resistance layer, and if high resistance AlGaA3 is used, current narrowing can be realized more easily.
さて、光の導波機構については１本発明によれば損失の
少ない屈折率導波型となる。（ＡＩ、Ｇａｔ−、）。、
。According to the present invention, the optical waveguide mechanism is of a refractive index waveguide type with low loss. (AI, Gat-,). ,
.
Ｉｎｏ、ｓＰのバンドギャップＥｇ（ｙ）は、ｙの増大
とともに大きくなるがｙ〜１においても高々２．３５ｅ
Ｖである。一方、ＡＪｕＧａ、−ｕＡｓのノ（ンドギャ
ップｇｇ（ｕ）は、Ｕ≧０．５で間接遷移型になるがＵ
の増加とともに単調に増大する。しかし。The bandgap Eg(y) of Ino, sP increases as y increases, but even at y~1 it is at most 2.35e.
It is V. On the other hand, the node gap gg(u) of AJuGa, -uAs becomes an indirect transition type when U≧0.5, but U
increases monotonically as . but.
Ｕ〜１でも高々２．２ｅＶである。ところで、パンの関
係が存在するが、ｎは直接遷移型のバンドギヤ、プによ
ってはｔ琺まる。従ってＡ ｌｕ Ｇ ａ ｔ −ｕ
Ａ ｓのｕ）０．５における直接遷移ギヤ、プはＵ〜１
のとき、約３．０ｅＶと大きい。従って、大きなＵにお
いては、ｎの小さな値が対応する。この点を利用して、
ＡＩＧａＩｎＰ系混晶とＡ Ｉ Ｇ ａ Ａ ｓ系混晶
を本発明が精求する一定の条件下で組合わせることによ
って、損失の少ない接合面に平行方向にも正の屈折率導
波機構を有する可視光半導体レーザを得ることができる
。Even for U~1, it is at most 2.2 eV. By the way, there is a pan relationship, but n is a direct transition type band gear, and t depends on the type of band gear. Therefore, A lu G a t -u
Direct transition gear at u) 0.5 of A s, p is U ~ 1
When , it is as large as about 3.0 eV. Therefore, for a large U, a small value of n corresponds. Taking advantage of this point,
By combining AIGaInP-based mixed crystal and AIGaAs-based mixed crystal under certain conditions pursued by the present invention, it has a positive refractive index waveguide mechanism with low loss even in the direction parallel to the junction plane. A visible light semiconductor laser can be obtained.
すなわち、活性層に隣接する第２の導電型クラッド層に
染み出した光波は、ストライプ状の（ＡＪＧａ １−、
）６．５Ｉｎ６４ Ｐ及び、その両側に接して設けられ
たＡＪ、Ｇａ□−ｕＡｓに達するが、ストライプ部（Ａ
ｌｚＧ”ｘ−１）ｏ、ｓ Ｉｎ０．、 ＰとＡＩ、Ｇａ
１１Ａｓとの屈折率が前者のそれが大きいために、スト
ライプ部に集中し、横モード制御が有効に行われる。In other words, the light waves leaking into the second conductivity type cladding layer adjacent to the active layer form a stripe-shaped (AJGa 1-,
)6.5In64P, AJ provided in contact with both sides of it, and Ga□-uAs are reached, but the stripe part (A
lzG"x-1) o, s In0., P and AI, Ga
Since the former has a larger refractive index than that of 11As, it is concentrated in the stripe portion, and transverse mode control is effectively performed.
以下１本発明の実施例を図面を用いて説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例を示す半導体レーザ装置の断
面図であシ、第２図はこの半導体レーザ装置の製作工程
図である。FIG. 1 is a sectional view of a semiconductor laser device showing an embodiment of the present invention, and FIG. 2 is a manufacturing process diagram of this semiconductor laser device.
まず１回目の成長で、ｎ型ＧａＡｓ基板１（Ｓ１ドープ
、 ｎ ＝ ２ Ｘ １ ｏ”ｃｍ−”）上に、ｎ型（
Ａｌｏ、５Ｇａｏ、ｓ）ｏ、ｓｔ Ｉ ｎｏ、４ｓ Ｐ
クラッド層２（ｆｌ＝ＩＸ１０”ｃｒｎ−３：厚み１．
２／ｊｍ）、ＧａＩｎＰ活性層３（アンドープ；厚み０
．１μｍ）、下部ｐ型（Ａｌｏ、ｓ Ｇａｏ、４）ｏ、
ｓＩ ｎｏ、ｓ Ｐクラッド層４（ｐ＝５×１０１７ｃ
！ｒＬ−コ；厚み０、：ｌａｍ）、上ｓｐ型（Ａｌｏ、
ｓ Ｇａｏ、ｓ）ｏ、ｓ Ｉｎｏ、ｓ Ｐクラッド層６
（ｐｍ５ Ｘ ｌ ０１７ｃＩＬ−３；厚みｊＡｍ）
、ｐ型Ｇ ａ Ａ Ｓ ’？ ヤ、プ層７ （Ｐ＝２Ｘ
１０”ｃｍ−”：厚み０．５μｍ）を順次区長形成した
（第２図］１ａＪ ）。First, in the first growth, n-type (
Alo, 5Gao, s)o, st I no, 4s P
Cladding layer 2 (fl=IX10”crn-3: thickness 1.
2/jm), GaInP active layer 3 (undoped; thickness 0
．． 1 μm), lower p-type (Alo, s Gao, 4) o,
sI no, s P cladding layer 4 (p=5×1017c
! rL-co; thickness 0, :lam), upper sp type (Alo,
s Gao, s)o, s Ino, s P cladding layer 6
(pm5 X l 017cIL-3; thickness jAm)
, p-type G a A S '? Ya, P layer 7 (P=2X
10"cm-" (thickness: 0.5 μm) were sequentially formed into sections (FIG. 2] 1aJ).
成長には、威圧Ｍ ＯＶ Ｐ Ｅ法を用い成長条件は。For growth, the coercive MOVPE method is used and the growth conditions are as follows.
温度７００℃、圧カフ ０Ｔｏｒｒ、Ｖ／［１−＝２０
０゜キャリアガス（Ｈｓ）の全流量１５ （１７ｍ１ｎ
）とした。原料にはトリメチルインジウム（Ｔ１１ｄＩ
：（ＯＨ３）ＩＩｎ）、）リエチルガリウム（ＴＷＧ：
（Ｃ２Ｈ５）３Ｇａ）、）リンチルアルミニウム（’ｒ
Ｍ” ： （ＣＨｓ）ｓ Ａ−ｌ） 、アルシン（Ａｓ
Ｈ３）、ホスフィン（Ｐ）Ｉｇ）、ｐ型ドーパントには
ジメチル亜鉛（ＤＭＺ ： （ＣＨ３）２ Ｚｎ ）、
ｎ型ドーパントにはセレン化水素（Ｈ，８ｅ）を用いた
。こうして成長じたウェハにフォトリングラフィにより
ストライプ状のｄｉｏ、マスク９を形成した（第２図（
ｂ））。Temperature 700℃, pressure cuff 0Torr, V/[1-=20
0゜Total flow rate of carrier gas (Hs) 15 (17m1n
). The raw material is trimethylindium (T11dI
:(OH3)IIn),)ethylgallium (TWG:
(C2H5)3Ga),) lynchylaluminum ('r
M”: (CHs)s A-l), arsine (As
H3), phosphine (P)Ig), dimethylzinc (DMZ: (CH3)2Zn) for the p-type dopant,
Hydrogen selenide (H, 8e) was used as the n-type dopant. Striped dio and mask 9 were formed on the wafer thus grown by photolithography (see Fig. 2).
b)).
次にこの８ｉ０，９を用いて化学工、チンダ液によ＃）
ｐ型ＧａＡｓキャップ層７をメサ状にエツチングし、つ
づいて、上部ｐ型（ｋｌｏ、ｓ （Ｊａｏ、ｓ）ｏ、５
ｔＴ−ｎｏ、ａｅＰクラッド層６をメサ状にエツチング
した（第２図（Ｃ））。そして８ ｉ ０２マスク９を
つけたままＭＯＶＰＢにより２回目の成長を行ないｎ型
λらＧａ１−ｕＡｓ層５を成長した（第２図（ｄｌ ”
）、次に５ｉ０２マスク９をエツチングで除去しく第２
図ｔｅｌ）。Next, use this 8i0, 9 to apply chemical engineering and tyndah liquid.
The p-type GaAs cap layer 7 is etched into a mesa shape, and then the upper p-type (klo, s (Jao, s) o, 5
tT-no, the aeP cladding layer 6 was etched into a mesa shape (FIG. 2(C)). Then, a second growth was performed by MOVPB with the 8i02 mask 9 attached to grow an n-type λ Ga1-uAs layer 5 (see Figure 2 (dl'')).
), then remove the 5i02 mask 9 by etching.
Figure tel).
ＭＯＶＰｇによシ３３回目成長を行ってｐ型ＧａＡｓコ
ンタクト層８を成長した（第２図げ））。２回目、３回
目の成長条件は上述の１回目の成長と同一である。最後
にｐｍ”画電極を形成して、キャビティ長２５０μｍに
へき開し１個々のチップに分離した。A p-type GaAs contact layer 8 was grown by performing the 33rd growth using MOVPg (see Figure 2). The growth conditions for the second and third times are the same as those for the first growth described above. Finally, a pm" picture electrode was formed, and the chip was cleaved to a cavity length of 250 μm and separated into individual chips.
上述の方法によシ作製した本発明のレーザウェハ３０．
トと、従来のレーザウェハ３０．トカら表 １
表１かられかるように１本発明を用いると、吸収損失の
少ない低閾値のレーザ装置をつくることができる。Laser wafer 30 of the present invention manufactured by the method described above.
and conventional laser wafer 30. Table 1 As can be seen from Table 1, by using the present invention, a laser device with low absorption loss and a low threshold value can be manufactured.
以上述べた実施例では、活性層をＧａＩｎＰ、クラッド
層を（ＡＡ’ｏ、ｓ Ｇａｏ、ｓ）ｏ、ｓ Ｉｎｏ、ｓ
Ｐ等としたが。In the embodiments described above, the active layer is GaInP, and the cladding layer is (AA'o,s Gao,s)o,s Ino,s
I named it P etc.
発振波長を変える（短波長にする）には１本発明の要件
を満たす範囲で活性層のＡノ組成を増やせはよい。In order to change the oscillation wavelength (make it shorter), it is better to increase the A composition of the active layer within a range that satisfies the requirements of the present invention.
このように本発明によシ１発振閾電流値の小さな基本横
モード制御ＡＪＧａＩｎＰ系半導体レーザ装置を得るこ
とがする。As described above, according to the present invention, a basic transverse mode control AJGaInP semiconductor laser device having a small oscillation threshold current value can be obtained.
第１図は本発明の一実施例を示す断面図、第２図１８）
〜（ｆ）は本発明の裏作工程を示す断面図、第３図は、
従来の半導体レーザ装置の例を示す断面図である。図に
おいて、１．１１はｎ型ＧａＡｓ基板、 ２Ｆｉｎ型（
ｋｌｏ、ｓ Ｇ ａｏ、ｓ ）ｏ、ｓ Ｉ ｎ１１．ｓ
Ｐクラッド層。
３．１３はＧａＩｎＰ活性層、４は下部ｐ型（ＡＡ’（
１，４Ｇ ａｏ、ｓ ）ｏ、ｓ Ｉ ｎｏ、ｉ Ｐクラ
ッド層・５はｎ型Ａ１６，１１ Ｇ ａ６４Ａｓ層、６
は上記ｐ型ＧａＡｓキャップ層、８゜１９はｐ型ＧａＡ
ｓコンタクト層、９はＳｉｎ。
マスク、１２はｎ型（Ａｌｏ、ｓ Ｇａ６．５）６．５
Ｉｎｏ、ｓ Ｐクラッド層、１４はｐ型（Ａｌｏ、ｓ
Ｇａｏ、ｓ）ｏ、ｓ Ｉ ｎｏ、ｓ Ｐクラッド層、
１８はｎ型ＧａＡｓ層。
代理人 弁理士 内 原 晋
着 １ 図
（０） ’ （ｄ）（ｂ）（ｃ）
（Ｃ） （ｆ）第 ２ 図Figure 1 is a sectional view showing one embodiment of the present invention, Figure 2 (18)
~(f) is a sectional view showing the back production process of the present invention, and FIG.
1 is a cross-sectional view showing an example of a conventional semiconductor laser device. In the figure, 1.11 is an n-type GaAs substrate, 2Fin type (
klo, s G ao, s ) o, s I n11. s
P cladding layer. 3.13 is the GaInP active layer, 4 is the lower p-type (AA'(
1,4G ao, s ) o, s I no, i P cladding layer ・5 is n-type A16,11 Ga a64As layer, 6
8゜19 is the p-type GaAs cap layer, and 8゜19 is the p-type GaAs cap layer.
s contact layer, 9 is Sin. Mask, 12 is n-type (Alo, s Ga6.5) 6.5
Ino, s P cladding layer, 14 is p-type (Alo, s
Gao, s)o, s I no, s P cladding layer,
18 is an n-type GaAs layer. Agent Patent Attorney Shinku Uchihara 1 Figure (0) ' (d) (b) (c) (C) (f) Figure 2
Claims (1)
格子整合する（Ａｌ＿ｘＧａ＿１＿−＿ｘ）＿０＿．＿
５Ｉｎ＿０＿．＿５Ｐからなる活性層と、この活性層を
挾む第１及び第２の導電型の（Ａｌ＿ｙＧａ＿１＿−＿
ｙ）＿０＿．＿５Ｉｎ＿０＿．＿５Ｐ（ｘ＜ｙ）からな
るクラッド層により形成されたダブルヘテロ構造を設け
、前記第２導電型クラッド層上に、ストライプ状に第２
の導電型（Ａｌ＿ｚＧａ＿１＿−＿ｚ）＿０＿．＿５Ｉ
ｎ＿０＿．＿５Ｐ（ｘ＜ｚ）を設け、同じく前記第２の
導電型クラッド層上で前記ストライプ状の第２の導電型
（Ａｌ＿ｚＧａ＿１＿−＿ｚ）＿０＿．＿５Ｉｎ＿０＿
．＿５Ｐの両側部分に、第１の導電性或いは高低抵抗を
有し且つ前記（Ａｌ＿ｚＧａ＿１＿−＿ｚＩｎ＿０＿．
＿５Ｐの屈折率よりも大なる屈折率を有し且つ活性層（
Ａｌ＿ｘＧａ＿１＿−＿ｘ）＿０＿．＿５Ｉｎ＿０＿．
＿５Ｐよりバンドギャップの大なる組成を、有するＡｌ
＿ｕＧａ＿１＿−＿ｕＡｓを少なくとも設けて成ること
を特徴とする半導体レーザ装置。(Al_xGa_1_-_x)_0_. ＿
5In_0_. An active layer consisting of _5P and first and second conductivity type (Al_yGa_1_-_
y)_0_. _5In_0_. A double heterostructure formed of a cladding layer consisting of _5P (x<y) is provided, and a second conductive type cladding layer is provided in a stripe shape on the second conductivity type cladding layer.
conductivity type (Al_zGa_1_-_z)_0_. _5I
n_0_. _5P (x<z), and the striped second conductivity type (Al_zGa_1_-_z)_0_. _5In_0_
．． Both side portions of _5P have first conductivity or high and low resistance, and have the above-mentioned (Al_zGa_1_-_zIn_0_.
It has a refractive index larger than that of _5P and has an active layer (
Al_xGa_1_-_x)_0_. _5In_0_.
Al having a composition with a larger band gap than _5P
A semiconductor laser device comprising at least _uGa_1_-_uAs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26082687A JPH01102982A (en) | 1987-10-16 | 1987-10-16 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26082687A JPH01102982A (en) | 1987-10-16 | 1987-10-16 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01102982A true JPH01102982A (en) | 1989-04-20 |
Family
ID=17353294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26082687A Pending JPH01102982A (en) | 1987-10-16 | 1987-10-16 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01102982A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0440471A2 (en) * | 1990-01-31 | 1991-08-07 | Nec Corporation | Transverse-mode stabilized laser diode |
| EP0477033A2 (en) * | 1990-09-21 | 1992-03-25 | Sharp Kabushiki Kaisha | A semiconductor laser device |
| US6590920B1 (en) | 1998-10-08 | 2003-07-08 | Adc Telecommunications, Inc. | Semiconductor lasers having single crystal mirror layers grown directly on facet |
| JP2008071803A (en) * | 2006-09-12 | 2008-03-27 | Institute Of National Colleges Of Technology Japan | Compound mixed crystal semiconductor light-emitting device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62172782A (en) * | 1986-01-24 | 1987-07-29 | Nec Corp | Semiconductor light emitting device |
-
1987
- 1987-10-16 JP JP26082687A patent/JPH01102982A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62172782A (en) * | 1986-01-24 | 1987-07-29 | Nec Corp | Semiconductor light emitting device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0440471A2 (en) * | 1990-01-31 | 1991-08-07 | Nec Corporation | Transverse-mode stabilized laser diode |
| EP0477033A2 (en) * | 1990-09-21 | 1992-03-25 | Sharp Kabushiki Kaisha | A semiconductor laser device |
| US6590920B1 (en) | 1998-10-08 | 2003-07-08 | Adc Telecommunications, Inc. | Semiconductor lasers having single crystal mirror layers grown directly on facet |
| JP2008071803A (en) * | 2006-09-12 | 2008-03-27 | Institute Of National Colleges Of Technology Japan | Compound mixed crystal semiconductor light-emitting device |
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