JPH03256387A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH03256387A JPH03256387A JP5544090A JP5544090A JPH03256387A JP H03256387 A JPH03256387 A JP H03256387A JP 5544090 A JP5544090 A JP 5544090A JP 5544090 A JP5544090 A JP 5544090A JP H03256387 A JPH03256387 A JP H03256387A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active layer
- type
- semiconductor laser
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 238000005253 cladding Methods 0.000 claims description 8
- 230000008719 thickening Effects 0.000 claims description 2
- 201000009310 astigmatism Diseases 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、単一物モードて発振するＡＪｆＧａＩｎＰ系
の半導体レーザ装置に−する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention is directed to an AJfGaInP semiconductor laser device that oscillates in a single object mode.
最近、有機金風熱分解法（以後ＭＯＶＰＥと略す）によ
る結晶或表によシ形戚された単一槓モードで発振するＡ
ｊ！’ＧａＩｎＰ系の半導体レーザ装置として、第３図
に示すような半導体レーザ装置が報告されている（エク
ステンプイド・アブストラクツ・オン・ザ・エイティー
ンス・カンファレンス・オン・ソリッド・ステート・デ
バイシーズ・アンド・マテリアルズ（Ｅｘｔｅｎｄｅｄ
Ａｂｓｔｒａｃｔｓ ｏｆ ｔｈｅ １８ｔｈＣｏｎ
ｆｅｒｅｎｃｅ ｏｎ Ｓｏｌ ｉｄ ５ｔａｔｅ Ｄ
ｅｖｉｃｅｓ ａｎｄ Ｍａｔｅｒ−ｉａｌｓ 、 Ｔ
ｏｋｙｏ 、 １９８６ 、 ｌ）ｐ、 １５３−１５
６ ）。この半導体レーザ装置は以下の手順で作製する
。筐ず、第一回目の成長でＩｌｌ ｆＪ ＧａＡｓ基板
１上に、ｎ型（Ａｎｏ。Recently, a crystal that oscillates in a single oscillation mode has been developed using an organic metal wind pyrolysis method (hereinafter abbreviated as MOVPE).
j! 'As a GaInP-based semiconductor laser device, a semiconductor laser device as shown in Fig. 3 has been reported (Extemporized Abstracts on the Eighteenth Conference on Solid State Devices and Materials (Extended
Abstracts of the 18thCon
ference on solid 5tate D
evices and Mater-ials, T
okyo, 1986, l) p, 153-15
6). This semiconductor laser device is manufactured by the following procedure. In the first growth, an n-type (Ano.
Ｇ ａ ６，４） ６．５ Ｉ ｎ ＠、６Ｆクラッド
層２ 、ＧａＩｎＰ活性層３゜ｐ型（Ａｌａ、ＩＢ Ｇ
ａ６．４ ）（１，５Ｉｎ６．５ ＦクラッドＭｌ ４
＊ ｐ型Ｇａ ６，５ Ｉ ｎ （１，５Ｐキー？５
Ｔプ層７．を順次形成する０次にフォトリソクラフィー
によ＃）８ ｔ Ｏ２をマスクとして、メサストライプ
を形成する。そして８ｉ０□マスクをつけた１ま、第二
回目の成長を行ないエツチングしたところをｎ型ＧａＡ
ｓブロック層１０で埋め込む。次に８ｉ０□マスクを除
去し、ｐ−」全面に電極が形成できるように第三回目の
成長でｐ型ＧａＡｓコンタクト層８を成長する。Ga 6,4) 6.5 I n @, 6F cladding layer 2, GaInP active layer 3°p type (Ala, IB G
a6.4 ) (1,5In6.5 F clad Ml 4
* p-type Ga 6,5 I n (1,5P key?5
T-layer 7. Using 0-order photolithography to sequentially form #)8tO2 as a mask, mesa stripes are formed. Then, with the 8i0□ mask attached, the second growth was performed and the etched area was etched with n-type GaA.
Embed with s block layer 10. Next, the 8i0□ mask is removed, and a p-type GaAs contact layer 8 is grown in a third growth so that an electrode can be formed on the entire p-'' surface.
この構造の半導体レーザ装置では、電流はｎ型ＧａＡｓ
層１０にようブロックされ、メサストライプ部にのみ注
入される。また、メサストライプ形成のエツチングのと
きに、メサストライプ部以外のｐ型りラッド層の厚みを
光の閉じ込めには不十分な犀み會でエツチングするので
ｎ型ＧａＡｓ層１０のある部分では、このｎ型ＧａＡｓ
Ｈｌｔ １０に光が吸収され、メサストライプ部にの
み光は導波される。In a semiconductor laser device with this structure, the current flows through n-type GaAs.
It is blocked by layer 10 and implanted only in the mesa stripes. In addition, when etching to form a mesa stripe, the thickness of the p-type rad layer other than the mesa stripe portion is etched with insufficient etching to confine light. n-type GaAs
Light is absorbed by Hlt 10 and guided only to the mesa stripe portion.
このようにこの半導体レーザ装置では、電流狭窄機構と
光導波機構が同時に作シ付けられる。In this way, in this semiconductor laser device, the current confinement mechanism and the optical waveguide mechanism are created simultaneously.
上述の第３図の半導体レーザ装置では、モードの安定に
光の吸収を用い、かつ横方向の実効屈折率差がステップ
状についているために、メサストライプ両脇で光の波面
が遅れてし１い、非点収差が大きくなってし筐うという
問題がある。In the semiconductor laser device shown in FIG. 3 described above, light absorption is used to stabilize the mode, and the effective refractive index difference in the lateral direction is stepped, so the wavefront of light is delayed on both sides of the mesa stripe. However, there is a problem in that astigmatism becomes large.
本発明の目的は、上述の問題点を解決し、ＭＯＶＰＥ法
による非点収差の小さい横モード制御構造のＡＡｔＧａ
ＩｎＰ系半導体レーザ装置を提供することにある。An object of the present invention is to solve the above-mentioned problems, and to obtain an AAtGa film with a transverse mode control structure with small astigmatism by MOVPE
An object of the present invention is to provide an InP-based semiconductor laser device.
（ＩＩＩＬを解決するための手段〕
本発明は、ｎ型ＧａＡ ｓ基板上に、ＧａＩｎＰもしく
ＦｉＡＪＧａ Ｉ ｎＰもしくはそれらの量子井戸層
から欧る活性層と、この活性層を挾み活性層ようも屈折
率の小さＩＡＡ！ＧａＩｎＰからなるクラッド層とから
欧るダブルへテロ構造が形成してあう、前記活性層の上
側のｐ型（ＡｌｘＧａ□−ｘ）６．５ ”０．５ Ｐク
ラ７１層は層専が部分的に厚くなることによう形成され
るストライプ状のメサ構造を有し、前記メサ構造の上面
以外の部分に量子準位が活性層のエネルギーキャップよ
シもすきくなる丹みのＧ ａＡ ｓ層を菊し、これらの
構造の上全面にｐ型（ＡＡｉｙ Ｇａ １イ）。ｓ Ｉ
ｎ ０．ｓ Ｐ （Ｙ＞Ｘ ）層を有することを％徴
とする。(Means for Solving IIIL) The present invention provides an active layer formed by forming an active layer formed from GaInP or FiAJGaInP or a quantum well layer thereof on an n-type GaAs substrate, and an active layer sandwiching this active layer. The p-type (AlxGa□-x) 6.5''0.5P cladding layer 71 above the active layer forms a double heterostructure with the cladding layer made of IAA!GaInP with a small refractive index. has a striped mesa structure that is formed by partially thickening the layer, and the quantum level is formed in parts other than the top surface of the mesa structure, which is larger than the energy cap of the active layer. A GaAs layer is formed on the entire surface of these structures, and a p-type (AAiy Ga1) layer is formed on the entire surface of these structures.
n 0. The presence of an s P (Y>X) layer is a % characteristic.
本発明の構造によれば、メサ構造の上面以外の部分の量
子準位が活性層のエネルギーキャップよシも大きくなる
厚みのＧａＡｓ層のある部分では、それを挾み込んでい
るｐ型（ＡｌＸＧａ１−ｘ）６．５ Ｉｎ（１，５Ｐク
ラッド層とｐ型（ＡｊＹＧａｌ−Ｙ） （１，ｓ Ｉ
ｎ０．、Ｐ （ｙ＞Ｘ）層に、ＧａＡｓ層との大きなバ
ンド不連続によるキャリヤーの空乏層が広がシ、ホール
が流れることができなくな少電流のフロック層として働
く、またＧａＡｓ層は、量子単位が活性層のエネルギー
キャップよりも大きく危る厚みと規定しであるので活性
層の光は吸収できない。そして構造の上全面のｐｆｆｉ
（ＡｊＹＧａｌｙ）０．５Ｉｎ０．５Ｐ（Ｙ＞Ｘ）層は
、ｐ ｆＩｉ（ＡｌＸＧａ１−ｘ ） ６．Ｂ Ｉｎ６
．５ Ｆクランド層ようも屈折率が小さいので、光の吸
収は用いない実屈折率型の導波機構となシ非点収差を小
さく押さえることができる。According to the structure of the present invention, in a part of the GaAs layer whose thickness is such that the quantum level of the part other than the top surface of the mesa structure is larger than the energy cap of the active layer, the p-type (AlXGa1 -x) 6.5 In (1,5P cladding layer and p-type (AjYGal-Y) (1,s I
n0. , a carrier depletion layer spreads in the P (y> Since the unit is specified to be thicker than the energy cap of the active layer, the active layer cannot absorb light. and ffi on the entire upper surface of the structure
(AjYGaly)0.5In0.5P (Y>X) layer is p fIi (AlXGa1-x) 6. B In6
．． Since the 5F ground layer also has a small refractive index, it is possible to suppress astigmatism to a small value with a real refractive index type waveguide mechanism that does not use light absorption.
本発明の実施例を図面を用いて説明する。 Embodiments of the present invention will be described using the drawings.
第１図は本発明の半導体レーザ装置の一実施例を示す断
面図で１、第２図はその製造工租図でるる。FIG. 1 is a sectional view showing one embodiment of a semiconductor laser device of the present invention, and FIGS. 1 and 2 are manufacturing process diagrams thereof.
筐す一回目の減圧ＭＯＶＰＥによる成長で、ｎ型ＧａＡ
ｓ基板１（Ｓ１ドープ；ｎ−２Ｘ１０ ｃＩｒＬ ）
上に、ｎ型（Ａ＃ ０．６ Ｇａ ０４） ０．ｓ １
ｎ Ｏ，ｓ Ｐクララド層２（ｎ−５ｘ１ｏｍ；Ｊｌ
み１μ伺）、Ｇａ Ｏ，ｓ Ｉ ｎ Ｏ，ｓ Ｐ活性層
３（アンドープ；厚み０．１μｍ）、ｐ型（ＡｌＯ，６
ＧａＯ，４）０．５Ｉ ｎ ６．５ Ｆクララ１層４
（ｐ＝５Ｘ１０ ｃｒｎ ；厚み１．０μｍ）を順
次形成した（第２図（ａｌ ）、成長条件は、温度７０
０℃、圧カフ ０Ｔｏｒｒ、 Ｖ／ ｍ ＝ ２００
、キャリヤガス（Ｈ２）の全流量１５１／ｒｎｉｎとし
た。During the first low-pressure MOVPE growth, n-type GaA
s substrate 1 (S1 doped; n-2X10 cIrL)
On top, n-type (A# 0.6 Ga 04) 0. s 1
n O, s P Clarado layer 2 (n-5x1om; Jl
Ga O, s I n O, s P active layer 3 (undoped; thickness 0.1 μm), p-type (AlO, 6
GaO, 4) 0.5I n 6.5 F Clara 1 layer 4
(p = 5 x 10 crn; thickness 1.0 μm) were sequentially formed (Fig. 2 (al), the growth conditions were a temperature of 70 m
0℃, pressure cuff 0Torr, V/m = 200
, the total flow rate of the carrier gas (H2) was 151/rnin.
原料としては、トリメチルインジウム（ＴＭＩ：（ＣＨ
ａ ） ｓ Ｉ ｎ ）、トリ：ｘ−ｙ−ルカリウム（
ＴＥＧ：（Ｃ４Ｈｓ ） ３Ｇａ）、トリメチルアルミ
ニラＡ （ＴＭＡ ：（ＣＨ３） ３Ａｌ）、アルシン
（ＡｓＨａ）、ホスフィン（ＰＨａ）、ｎ！トド−ント
にはセレン化水素（Ｈ２Ｓｅ）、ｐ型ドーパントニハシ
クロペンタチェニルマグネシウム（ＣｐｚＭｇ）を用い
た。こうして成長したウェハにフォトリングラフィによ
シ暢４μｍのストライプ状の８ｉ０２マスクを形成した
（第２図（ｂ））。As a raw material, trimethylindium (TMI: (CH
a) s I n ), tri:xy-rupotassium (
TEG: (C4Hs) 3Ga), trimethylaluminilla A (TMA: (CH3) 3Al), arsine (AsHa), phosphine (PHa), n! Hydrogen selenide (H2Se) and p-type dopant cyclopentachenylmagnesium (CpzMg) were used as the dopant. On the thus grown wafer, a 4 μm striped 8i02 mask was formed by photolithography (FIG. 2(b)).
次にこの５ｉｎ２マスクを用いて塩酸系のエツチング液
によシ、ｐ型（Ａ１６．６ Ｇａ ６，４ ） ６５Ｉ
ｎ Ｏ，Ｓ Ｐクランド眉４の途中筐で（ここでは０
．８μｍとした）をメサ状にエツチングした（第２図＜
ＣＩ ）、つぎに５ｉ０２マスクをつけた１ま減圧ＭＯ
ＶＰＥによシ二回目の成長を６晩いｐ型Ｇ ａＡｓ層５
（厚み５０Ａ）を形成した（第２図（ｄ） ）、そして
第２図（ｅｌに示すように、８ｉ０２マスクを除去した
後に・減圧ＭＯＶＰＥによシ三回目の成長を６危いｐ型
（Ａｌ０．５Ｇａｌ０．ｚ） ０．５Ｉｎ（Ｌ５Ｐキャ
ップ７１６ （ｐ−５ｘｌＯｔｘ ；厚み１．０Ｊｌ
−）ｑ Ｉ）ｍＧａｏｓＩｎ０．ｓＰＰ層、ｐ型（ｊａ
Ａｓ ＝ｒ ｙタグ１層８、を形成した（第２図（ｆ）
）。最後に、ｐ。Next, using this 5in2 mask, p-type (A16.6 Ga 6,4 ) 65I was etched with a hydrochloric acid-based etching solution.
n O, S In the middle of the P clan eyebrow 4 (here 0
．． 8 μm) was etched into a mesa shape (Fig.
CI ), then 1-mass decompression MO with 5i02 mask on
The p-type GaAs layer 5 was grown by VPE for 6 nights.
(thickness 50A) (Fig. 2(d)), and after removing the 8i02 mask, the third growth was performed by low pressure MOVPE as shown in Fig. 2(d). Al0.5Gal0.z) 0.5In (L5P cap 716 (p-5xlOtx; thickness 1.0Jl
-) q I) mGaosIn0. sPP layer, p type (ja
As=ry tag 1 layer 8 was formed (Fig. 2(f)
). Finally, p.
ｎ両電極（図示省略）を形成してキヤとティ長３００μ
偏にへき関し、個々のチップに分離して半導体レーザ装
置とした。n both electrodes (not shown) are formed and the gear and tee length is 300μ
As a result, the semiconductor laser device was separated into individual chips.
こうして得られた本発明のレーザ装置の非点収差を、メ
サ幅４μ餌の従来構造の半導体レーザ装置を比較したと
ころ、メサ幅４μｍの従来構造の半導体レーザ装置が１
２μ惰程度の非点収差を持つのに比べ、メサ幅４μｍの
本発明の半導体レーザ装置の非点収差は３μ解以下でｂ
った。When the astigmatism of the laser device of the present invention thus obtained was compared with that of a semiconductor laser device of a conventional structure with a mesa width of 4 μm, it was found that the semiconductor laser device of a conventional structure with a mesa width of 4 μm was 1
Compared to the astigmatism of about 2 μm, the semiconductor laser device of the present invention with a mesa width of 4 μm has an astigmatism of less than 3 μm.
It was.
以上述べた実施例では、活性層やクラッド層の組成を規
定したが、活性層組成は製作する半導体レーザ装置に要
求される発振波長要件を満たす組成、もしくは量子井戸
にすればよく、クラッド層組成は用いる活性層組成に対
して光とキャリヤの閉じ込めが十分にできる組成を選べ
ばよい。また半導体レーザ装置Ｋｌ！求される特性によ
りＳＣＨ構造にするなどクラッド層をよシ多層化するこ
ともできる。In the embodiments described above, the compositions of the active layer and cladding layer are specified, but the active layer composition may be a composition that satisfies the oscillation wavelength requirements for the semiconductor laser device to be manufactured, or a quantum well. It is sufficient to select a composition that can sufficiently confine light and carriers for the active layer composition used. Also, the semiconductor laser device Kl! Depending on the required characteristics, the cladding layer can be made more multi-layered, such as having an SCH structure.
このように本発明により、非点収差の小さい半導体レー
ザ装置が自己整合的に製作できる。As described above, according to the present invention, a semiconductor laser device with small astigmatism can be manufactured in a self-aligned manner.
第１図は本発明の実施例を示す断面図、第２図（ａｔ〜
（ｆ）Ｆｉ本発明の製作工程を示す概略図、第３図は従
来の半導体レーザ装置の例を示す断面図である。FIG. 1 is a sectional view showing an embodiment of the present invention, and FIG.
(f) Fi A schematic diagram showing the manufacturing process of the present invention, and FIG. 3 is a cross-sectional view showing an example of a conventional semiconductor laser device.
Claims (1)
ｎＰもしくはそれらの量子井戸層からなる活性層と、こ
の活性層を挾み活性層よりも屈折率の小さなＡｌＧａＩ
ｎＰからなるクラッド層とからなるダブルヘテロ構造が
形成してあり、前記活性層の上側のｐ型（Ａｌ＿ＸＧａ
＿１＿−＿Ｘ）＿０＿．＿５Ｉｎ＿０＿．＿５Ｐクラッ
ド層は層厚が部分的に厚くなることにより形成されるス
トライプ状のメサ構造を有し、前記メサ構造の上面以外
の部分に量子準位が活性層のエネルギーギャップよりも
大きくなる厚みのＧａＡｓ層を有し、これらの構造の上
全面にｐ型（Ａｌ＿ＹＧａ＿１＿−＿Ｙ）＿０＿．＿５
Ｉｎ＿０＿．＿５Ｐ（Ｙ＞Ｘ）層を有することを特徴と
する半導体レーザ装置。GaInP or AlGaI on n-type GaAs substrate
An active layer consisting of nP or a quantum well layer thereof, and an AlGaI layer sandwiching this active layer and having a smaller refractive index than the active layer.
A double heterostructure consisting of a cladding layer made of nP is formed, and a p-type (Al_XGa
_1_-_X)_0_. _5In_0_. The _5P cladding layer has a striped mesa structure formed by partially thickening the layer, and a portion other than the top surface of the mesa structure has a thickness such that the quantum level is larger than the energy gap of the active layer. It has a GaAs layer, and p-type (Al_YGa_1_-_Y)_0_. ＿５
In_0_. A semiconductor laser device characterized by having a _5P (Y>X) layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5544090A JPH03256387A (en) | 1990-03-06 | 1990-03-06 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5544090A JPH03256387A (en) | 1990-03-06 | 1990-03-06 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03256387A true JPH03256387A (en) | 1991-11-15 |
Family
ID=12998656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5544090A Pending JPH03256387A (en) | 1990-03-06 | 1990-03-06 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03256387A (en) |
-
1990
- 1990-03-06 JP JP5544090A patent/JPH03256387A/en active Pending
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