JP7642118B2 - Processing liquid removing method, processing liquid removing device, substrate processing device, and substrate processing method - Google Patents

Description

The technology disclosed in this specification relates to a processing liquid removal method, a processing liquid removal device, a substrate processing device, and a substrate processing method.

Conventionally, in the manufacturing process of substrates such as semiconductor substrates, various processes are performed on the substrates using substrate processing equipment. These processes use processing liquids for processing the substrates (see, for example, Patent Document 1).

JP 2016-12629 A

The processing liquid supplied to process the substrate is removed by a drying process after processing, but some of the processing liquid may remain in the chamber where the substrate is processed.

In particular, if the processing liquid remains at the location where the substrate to be processed is fixed and in the surrounding area, there is a problem that the processing liquid may contaminate the substrate that is fixed to that location in a later process.

The technology disclosed in this specification has been developed in consideration of the problems described above, and aims to provide a technology for effectively removing the supplied treatment liquid.

A first aspect of the technology disclosed in the present specification is a method for removing a processing liquid using a processing device that includes a rotating part having a first surface and capable of rotating around a rotation axis in the normal direction of the first surface, and an opposing part having a second surface opposing the first surface, and includes at least a step of supplying a processing liquid to a gap region between the first surface and the second surface, and a step of removing the processing liquid adhering to the second surface by rotating the rotating part while the first surface and the second surface are in close proximity to each other, and while the processing liquid is being supplied to the gap region, the first surface and the second surface are spaced apart more than in the step of removing the processing liquid.

A second aspect of the technology disclosed in the present specification is a method for removing a processing liquid using a processing device that includes a rotating part having a first surface and capable of rotating around a rotation axis in the normal direction of the first surface, and an opposing part that is the underside of a nozzle that faces the first surface and is movable in a plane along the first surface, and includes at least a step of supplying a processing liquid to a gap region that is a region between the first surface and the second surface, and a step of removing the processing liquid adhering to the second surface by positioning the underside of the nozzle on the outer edge side of the center of the rotating part and rotating the rotating part while bringing the first surface and the second surface into close proximity.

A third aspect of the technology disclosed in the present specification is a method for removing a processing liquid using a processing device comprising a rotating part having a first surface and capable of rotating around a rotation axis in the normal direction of the first surface, and a counter part having a second surface opposite the first surface and not rotating, and comprising at least a step of supplying a processing liquid to a gap region which is a region between the first surface and the second surface, and a step of removing the processing liquid adhering to the second surface by bringing the first surface and the second surface into close proximity and rotating the rotating part while the processing liquid adhering to the second surface is in contact with the first surface.

The fourth aspect of the technology disclosed in this specification is related to the first or second aspect, and the opposing part does not rotate.

A fifth aspect of the technology disclosed in the present specification is related to the first or second aspect, and in the step of removing the processing liquid, the rotating part is rotated in a state in which the processing liquid adhering to the second surface is in contact with the first surface.

A sixth aspect of the technology disclosed in the present specification is related to the first aspect, and involves separating the first surface from the second surface while the processing liquid is being supplied to the gap region, and then bringing the first surface into close proximity to the second surface in a process of removing the processing liquid.

A seventh aspect of the technology disclosed in the present specification is related to the first aspect, and after the step of removing the processing liquid, the first surface and the second surface are separated while the processing liquid is being supplied to the gap region.

The eighth aspect of the technology disclosed in the present specification is related to any one of the first to seventh aspects, and in the step of removing the treatment liquid, a gas is supplied to the gap region.

The ninth aspect of the technology disclosed in the present specification is related to any one of the first to eighth aspects, and the rotating part is a dummy substrate, which is a substrate of a predetermined shape.

A tenth aspect of the technology disclosed in the present specification is related to any one of the first to ninth aspects, and in the step of removing the treatment liquid, the second surface is heated.

An eleventh aspect of the technology disclosed in the present specification is related to any one of the first to tenth aspects, and the treatment liquid is a chemical liquid for treating the rotating part, or a cleaning liquid for cleaning at least one of the rotating part or the opposing part.

A twelfth aspect of the technology disclosed in the present specification includes a rotating unit having a first surface and capable of rotating around a rotation axis in the normal direction of the first surface, an opposing unit having a second surface opposing the first surface, a processing liquid supply unit for supplying processing liquid to at least a gap region between the first surface and the second surface, a moving unit for moving at least one of the rotating unit or the opposing unit toward or away from the other, and a control unit for controlling the rotation drive of the rotating unit and controlling the rotating unit or the opposing unit of the moving unit to move toward or away from each other, and the control unit causes the moving unit to move the first surface and the second surface away from each other while the processing liquid is being supplied to the gap region by the processing liquid supply unit, and causes the moving unit to rotate the rotating unit in a state in which the first surface and the second surface are brought into close proximity to each other when removing the processing liquid adhering to the second surface.

A thirteenth aspect of the technology disclosed in the present specification includes a rotating part having a first surface and rotatable around a rotation axis normal to the first surface, a facing part having a second surface facing the first surface and movable along the first surface, a nozzle for supplying a treatment liquid to at least a gap region between the first surface and the second surface, and a control part for controlling the rotation drive of the rotating part and the position of the nozzle, and when removing the treatment liquid adhering to the second surface, the control part positions the nozzle on the outer edge side of the center of the rotating part and rotates the rotating part with the first surface and the second surface in close proximity.

A fourteenth aspect of the technology disclosed in the present specification includes a rotating unit having a first surface and capable of rotating around a rotation axis in the normal direction of the first surface, a counter unit having a second surface facing the first surface and not rotating, a processing liquid supply unit for supplying processing liquid to at least a gap region between the first surface and the second surface, and a control unit for controlling the rotational drive of the rotating unit, and the control unit rotates the rotating unit in a state where the first surface and the second surface are brought into close proximity with each other and the processing liquid adhering to the second surface is in contact with the first surface.

The fifteenth aspect of the technology disclosed in the present specification is related to the twelfth or thirteenth aspect, and the opposing part does not rotate.

A sixteenth aspect of the technology disclosed in the present specification is related to the twelfth, thirteenth or fifteenth aspects, and the control unit rotates the rotating unit while the processing liquid adhering to the second surface is in contact with the first surface.

A seventeenth aspect of the technology disclosed in the present specification is related to any one of the twelfth to sixteenth aspects, and further includes a gas supply unit that supplies gas to the gap region at least when removing the processing liquid adhering to the second surface.

The 18th aspect of the technology disclosed in the present specification is related to any one of the 12th to 17th aspects, and the rotating part is a dummy substrate, which is a substrate of a predetermined shape.

A 19th aspect of the technology disclosed in the present specification is related to any one of the 12th to 18th aspects, and further includes a heating unit that heats the second surface.

The twentieth aspect of the technology disclosed in the present specification is related to any one of the twelfth to nineteenth aspects, and the treatment liquid is a chemical liquid for treating the rotating part, or a cleaning liquid for cleaning at least one of the rotating part or the opposing part.

A twenty-first aspect of the technology disclosed in the present specification is a substrate processing apparatus that supplies a processing liquid to an upper surface of a substrate held by a spin chuck while rotating the substrate, the area of which excluding the edge of the lower surface of the substrate. The substrate processing apparatus includes a back surface shielding plate that has an opposing surface facing the edge of the lower surface of the substrate held by the spin chuck and does not rotate, and a processing liquid supply unit that supplies processing liquid between the edge of the lower surface of the substrate held by the spin chuck and the opposing surface of the back surface shielding plate. After the processing liquid is supplied by the processing liquid supply unit between the edge of the lower surface of the substrate held by the spin chuck and the opposing surface of the back surface shielding plate, the spin chuck is rotated to splash the processing liquid outward from the back surface shielding plate while the edge of the lower surface of the substrate and the back surface shielding plate are brought into close proximity to each other, thereby cleaning the opposing surface of the back surface shielding plate.

A 22nd aspect of the technology disclosed in the present specification is a substrate processing apparatus that supplies a processing liquid to an upper surface of a substrate held by a spin chuck while rotating the substrate with a rotating part, the apparatus comprising: a nozzle that is movable along the upper surface of the substrate held by the spin chuck and has an opposing surface that faces the upper surface of the substrate; and after the processing liquid is supplied to the upper surface of the substrate held by the spin chuck from the nozzle, the nozzle is positioned on the outer edge side of the center of the rotating part and the substrate and the nozzle are brought into close proximity to each other, and the processing liquid is sprayed outward from the substrate by rotating the spin chuck, thereby cleaning the opposing surface of the nozzle.

A 23rd aspect of the technology disclosed in the present specification is a substrate processing method, comprising: a supplying step of supplying a processing liquid between the back edge of the substrate held by the spin chuck and a facing surface of a non-rotating back surface shielding plate that faces the end surface of the bottom surface of the substrate held by the spin chuck while rotating the substrate, the area of which excluding the end surface of the bottom surface of the substrate being held by the spin chuck; and a removal step of rotating the spin chuck while bringing the end surface of the bottom surface of the substrate and the back surface shielding plate into close proximity to each other, to scatter and remove the processing liquid supplied between the substrate held by the spin chuck and the facing surface of the back surface shielding plate, thereby cleaning the facing surface of the back surface shielding plate.

A 24th aspect of the technology disclosed in the present specification is a substrate processing method including a supplying step of supplying a processing liquid to an upper surface of the substrate held by the spin chuck from a nozzle that is movable in a plane along the upper surface of the substrate held by the spin chuck and has an opposing surface that faces the upper surface of the substrate while rotating the substrate held by a spin chuck with a rotating part, and a removal step of rotating the spin chuck to scatter and remove the processing liquid outward from the substrate while positioning the nozzle on the outer edge side of the center of the rotating part and bringing the substrate and the nozzle close to each other, and cleaning the opposing surface of the nozzle.

According to the first to twenty-fourth aspects of the technology disclosed in the present specification, by rotating the rotating part while the rotating part and the opposing part are in close proximity to each other, the treatment liquid adhering to the opposing part can be removed by the direct or indirect contribution of the centrifugal force generated by the rotation of the rotating part.

Furthermore, the objects, features, aspects and advantages associated with the technology disclosed in the present specification will become more apparent from the detailed description and accompanying drawings set forth below.

1 is a diagram illustrating an example of a configuration of a substrate processing apparatus according to an embodiment; 4 is a functional block diagram showing an example of the connection relationship between each element of the substrate processing apparatus and a controller. FIG. FIG. 4 is a sequence diagram showing an example of an operation of the substrate processing apparatus. 4 is a flowchart showing an example of an operation of the substrate processing apparatus corresponding to FIG. 3 . 13 is a diagram showing in detail a configuration including a substrate and a back shield plate when performing chemical liquid treatment; FIG. 13A and 13B are diagrams showing in detail a configuration including a dummy substrate and a rear shielding plate when performing a cleaning process. 13 is a diagram showing in detail a configuration including a dummy substrate and a rear shielding plate when a drying process is performed. FIG. 13 is a diagram showing in detail a configuration including a dummy substrate and a cleaning liquid nozzle when performing a drying process. FIG. 1 is a diagram illustrating an example of a configuration of a substrate processing apparatus according to an embodiment; 13 is a diagram showing in detail a configuration including a substrate (or a dummy substrate) and a surface blocking plate when a drying process is performed. FIG.

The following describes the embodiments with reference to the attached drawings. In the following embodiments, detailed features are shown to explain the technology, but these are merely examples and are not necessarily all essential features for the embodiments to be feasible.

The drawings are schematic, and for ease of explanation, configurations are omitted or simplified as appropriate in the drawings. Furthermore, the size and positional relationships of the configurations shown in different drawings are not necessarily described accurately, and may be changed as appropriate. Furthermore, hatching may be used in drawings such as plan views that are not cross-sectional views to make it easier to understand the contents of the embodiments.

In addition, in the following description, similar components are illustrated with the same reference symbols, and their names and functions are also similar. Therefore, detailed descriptions of them may be omitted to avoid duplication.

In addition, in the following description, when a certain component is described as "comprising," "including," or "having," unless otherwise specified, this is not an exclusive expression that excludes the presence of other components.

In addition, even if ordinal numbers such as "first" or "second" are used in the following description, these terms are used for convenience to facilitate understanding of the contents of the embodiments, and are not limited to the ordering that may result from these ordinal numbers.

In addition, in the following explanation, expressions indicating relative or absolute positional relationships, such as "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," or "coaxial," unless otherwise specified, include cases where the positional relationship is strictly indicated and cases where the angle or distance is displaced within a tolerance or within a range where the same level of functionality is obtained.

In addition, in the following description, expressions indicating an equal state, such as "same," "equal," "uniform," or "homogeneous," unless otherwise specified, include cases indicating a strictly equal state, as well as cases where differences occur within the tolerance or range where the same level of functionality is obtained.

In addition, in the following description, unless otherwise specified, expressions such as "moving an object in a specific direction" include moving an object parallel to the specific direction, and moving an object in a direction that has a component in the specific direction.

In addition, in the following description, terms that indicate specific positions and directions, such as "top," "bottom," "left," "right," "side," "bottom," "front," or "back," may be used, but these terms are used for convenience to facilitate understanding of the contents of the embodiments, and are not related to the directions in which the embodiments are actually implemented.

In addition, in the following description, when it is written "upper surface of..." or "lower surface of...", it is intended to include not only the upper surface of the target component itself, but also a state in which another component is formed on the upper surface of the target component. In other words, for example, when it is written "B provided on the upper surface of A", it does not prevent another component "C" from being between A and B.

First Embodiment
A processing liquid removing method and a processing liquid removing device according to this embodiment will be described below.

In this embodiment, the functions and operations of the substrate processing apparatus 100 as a processing liquid removal apparatus will be particularly described.

<Configuration of the Substrate Processing Apparatus>
1 is a diagram illustrating an example of the configuration of a substrate processing apparatus 100 according to the present embodiment. In order to facilitate understanding of the configuration, some components may be omitted or illustrated in a simplified form in the drawing.

The substrate processing apparatus 100 is a single-wafer processing apparatus that processes disk-shaped substrates W, such as semiconductor wafers, one by one. The substrate processing apparatus 100 performs various processes (cleaning process, etching process, etc.) on the substrates W, such as fluid processing using a processing liquid (i.e., processing liquid including a chemical liquid, cleaning liquid, or rinsing liquid) or gas, processing using electromagnetic waves such as ultraviolet light, or physical cleaning processing (e.g., brush cleaning or spray nozzle cleaning, etc.).

The substrates to be processed include, for example, semiconductor substrates, substrates for flat panel displays (FPDs) such as liquid crystal displays or organic electroluminescence (EL) displays, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, printed circuit boards, or substrates for solar cells.

In the substrate processing apparatus 100, for example, when cleaning the inside of the processing chamber described below, a dummy substrate DW is placed in place of the substrate W. Here, the dummy substrate DW is a substrate whose thickness, shape, etc., are already known.

Here, the upper and lower surfaces of both the substrate W and the dummy substrate DW are flat, but grooves or irregularities may be formed on the upper and lower surfaces.

As shown in FIG. 1, the substrate processing apparatus 100 includes a box-shaped processing chamber 50 having an internal space, a spin chuck 51 that holds one substrate W or dummy substrate DW in a horizontal position within the processing chamber 50 and rotates the substrate W or dummy substrate DW around a vertical rotation axis Z passing through the center of the substrate W or dummy substrate DW, a back surface shielding plate 170 that is arranged opposite the underside of the substrate W or dummy substrate DW, a moving unit 190 that moves the back surface shielding plate 170 in the vertical direction (i.e., the Z direction in FIG. 1), and a cylindrical processing cup 511 that surrounds the spin chuck 51 around the rotation axis Z of the substrate W or dummy substrate DW.

Here, "facing" refers to a state in which, for example, two surfaces face each other, and it is acceptable for another object to be between the facing surfaces.

The processing chamber 50 is surrounded by a box-shaped partition wall 50A. The partition wall 50A has an opening 50B formed therein for loading and unloading the substrate W or dummy substrate DW into and out of the processing chamber 50.

The opening 50B is opened and closed by a shutter 50C. The shutter 50C is raised and lowered by a shutter lifting mechanism (not shown here) between a closed position (shown by a two-dot chain line in FIG. 1) in which the opening 50B is covered, and an open position (shown by a solid line in FIG. 1) in which the opening 50B is opened.

When loading or unloading the substrate W or dummy substrate DW, the transport robot uses a robot hand to access the processing chamber 50 through the opening 50B. This allows an unprocessed substrate W to be placed on the top surface of the spin chuck 51, or a processed substrate W to be removed from the spin chuck 51.

As shown in FIG. 1, the spin chuck 51 includes a disk-shaped spin base 51A that vacuum-adsorbs the underside of a horizontally oriented substrate W or dummy substrate DW to its upper surface, a rotation shaft 51C that extends downward from the center of the spin base 51A, and a spin motor 51D that rotates the rotation shaft 51C to rotate the substrate W or dummy substrate DW adsorbed to the spin base 51A.

The upper surface of the spin base 51A is a flat surface made of, for example, porous ceramics. However, grooves or irregularities may be formed on the upper surface of the spin base 51A to the extent that the substrate W or dummy substrate DW can be adsorbed.

The spin chuck 51 is not limited to the vacuum suction type chuck shown in FIG. 1, but may be, for example, a clamping type chuck that has multiple chuck pins protruding upward from the outer periphery of the upper surface of the spin base and clamps the peripheral portion of the substrate W or dummy substrate DW with the chuck pins.

The back surface shielding plate 170 is provided in an annular shape so as to surround the periphery of the spin chuck 51 in a plan view. The upper surface of the back surface shielding plate 170 faces the lower surface of the substrate W or dummy substrate DW held by the spin base 51A. The upper surface of the back surface shielding plate 170 and the lower surface of the substrate W or dummy substrate DW are preferably parallel. Here, the area sandwiched between the upper surface of the back surface shielding plate 170 and the lower surface of the substrate W or dummy substrate DW is referred to as the gap area 180.

The upper surface of the rear shielding plate 170 is flat, but grooves or irregularities may be formed on the upper surface.

In addition, in FIG. 1, the rear surface shielding plate 170 has approximately the same diameter as the substrate W or dummy substrate DW, but the size of the rear surface shielding plate 170 is not limited to this, and it may be larger than the substrate W or dummy substrate DW, or conversely, it may be smaller.

In addition, in this embodiment, the rear shielding plate 170 is independent of the spin chuck 51 and does not rotate around the rotation axis Z, but the rear shielding plate 170 may be rotatable around any axis including the rotation axis Z.

The moving unit 190 supports the rear shielding plate 170 and raises and lowers the rear shielding plate 170 in the vertical direction. The moving unit 190 is provided around the spin chuck 51 in a plan view, and is raised and lowered in the vertical direction by a motor (not shown).

By driving the moving unit 190, the upper surface of the back surface shielding plate 170 moves up and down between a position (referred to as the upper position, etc.) where it can come into contact with the lower surface of the substrate W or dummy substrate DW held by the spin base 51A, and a position (referred to as the lower position, etc.) where the gap area 180 between the upper surface of the back surface shielding plate 170 and the lower surface of the substrate W or dummy substrate DW is sufficiently widened. Here, the driving of the moving unit 190 is controlled by a control unit, which will be described later.

In this embodiment, the rear surface shielding plate 170 is moved by driving the moving part 190, thereby changing the width of the gap area 180 in the Z direction. However, the width of the gap area 180 in the Z direction may also be changed by moving the substrate W or dummy substrate DW held by the spin base 51A relative to the rear surface shielding plate 170.

As shown in FIG. 1, the substrate processing apparatus 100 includes a chemical nozzle 52 that ejects a chemical solution toward the top surface of the substrate W held by the spin chuck 51, a chemical arm 152 to which the chemical nozzle 52 is attached at its tip, a chemical tank 53 that stores the chemical solution to be supplied to the chemical nozzle 52, a chemical pipe 54 that guides the chemical solution in the chemical tank 53 to the chemical nozzle 52, a liquid delivery device 55 (e.g., a pump) that delivers the chemical solution in the chemical tank 53 to the chemical pipe 54, and a chemical valve 56 that opens and closes the inside of the chemical pipe 54.

The underside (end surface) of the chemical nozzle 52 is flat, but grooves or irregularities may be formed on the underside.

The chemical liquid arm 152 comprises a rotary drive source 152A, a shaft body 152B, and an arm portion 152C having one end fixed to the upper end of the shaft body 152B and the other end to which the chemical liquid nozzle 52 is attached.

When the shaft 152B of the chemical arm 152 is rotated by the rotary drive source 152A, the chemical nozzle 52 attached to the tip of the arm portion 152C can move along the top surface of the substrate W held by the spin chuck 51 or the top surface of the dummy substrate DW. In other words, the chemical nozzle 52 attached to the tip of the arm portion 152C can move in the horizontal direction. Here, the drive of the rotary drive source 152A is controlled by the control unit described below.

The substrate processing apparatus 100 further includes a circulation pipe 57 that connects the chemical pipe 54 and the chemical tank 53 upstream of the chemical valve 56 (i.e., on the chemical tank 53 side), a circulation valve 58 that opens and closes the inside of the circulation pipe 57, and a temperature adjustment device 59 that adjusts the temperature of the chemical flowing through the circulation pipe 57.

The opening and closing of the chemical valve 56 and the circulation valve 58 is controlled by the control unit described below. When the chemical in the chemical tank 53 is to be supplied to the chemical nozzle 52, the chemical valve 56 is opened and the circulation valve 58 is closed. In this state, the chemical sent from the chemical tank 53 to the chemical pipe 54 by the liquid delivery device 55 is supplied to the chemical nozzle 52.

On the other hand, when the supply of chemical liquid to the chemical liquid nozzle 52 is stopped, the chemical liquid valve 56 is closed and the circulation valve 58 is opened. In this state, the chemical liquid sent from the chemical liquid tank 53 to the chemical liquid piping 54 by the liquid delivery device 55 returns to the chemical liquid tank 53 through the circulation piping 57. Therefore, during the supply stop period when the supply of chemical liquid to the chemical liquid nozzle 52 is stopped, the chemical liquid continues to circulate through the circulation path formed by the chemical liquid tank 53, the chemical liquid piping 54, and the circulation piping 57.

The temperature control device 59 adjusts the temperature of the liquid chemical flowing through the circulation pipe 57. Therefore, the liquid chemical in the liquid chemical tank 53 is heated in the circulation path while the supply is stopped, and is maintained at a temperature higher than room temperature.

The opening of the chemical valve 56 is adjustable so that a minute amount of chemical can be discharged from the chemical nozzle 52 for pre-dispensing. A chemical recovery member (not shown here) is disposed near the chemical nozzle 52, and recovers the pre-dispensed chemical from the chemical nozzle 52.

1, the substrate processing apparatus 100 includes a rinse liquid nozzle 60 that ejects rinse liquid toward the top surface of the substrate W held by the spin chuck 51, a rinse liquid arm 160 to which the rinse liquid nozzle 60 is attached at its tip, a rinse liquid pipe 61 that supplies rinse liquid from a rinse liquid supply source (not shown here) to the rinse liquid nozzle 60, and a rinse liquid valve 62 that switches between supplying and stopping the rinse liquid from the rinse liquid pipe 61 to the rinse liquid nozzle 60. DIW (deionized water) or the like is used as the rinse liquid.

The bottom surface (end surface) of the rinse liquid nozzle 60 is flat, but grooves or irregularities may be formed on the bottom surface.

The rinse liquid arm 160 comprises a rotary drive source 160A, a shaft body 160B, and an arm portion 160C having one end fixed to the upper end of the shaft body 160B and having a rinse liquid nozzle 60 attached to the other end.

When the shaft 160B of the rinsing liquid arm 160 is rotated by the rotary drive source 160A, the rinsing liquid nozzle 60 attached to the tip of the arm portion 160C can move along the top surface of the substrate W held by the spin chuck 51 or the top surface of the dummy substrate DW. In other words, the rinsing liquid nozzle 60 attached to the tip of the arm portion 160C can move in the horizontal direction. Here, the drive of the rotary drive source 160A is controlled by the control unit described below.

After the chemical liquid is supplied to the substrate W by the chemical liquid nozzle 52, the rinsing liquid is supplied to the substrate W from the rinsing liquid nozzle 60, thereby washing away the chemical liquid adhering to the substrate W and the rear surface shielding plate 170.

As shown in FIG. 1, the substrate processing apparatus 100 includes a cleaning liquid nozzle 64 for ejecting cleaning liquid toward a predetermined portion (e.g., the spin base 51A) inside the processing chamber 50, a cleaning liquid pipe 65 for supplying cleaning liquid from a cleaning liquid supply source (not shown here) to the cleaning liquid nozzle 64, and a cleaning liquid valve 66 for switching between supplying and stopping the cleaning liquid from the cleaning liquid pipe 65 to the cleaning liquid nozzle 64. DIW (deionized water) or the like is used as the cleaning liquid.

The cleaning liquid nozzle 64 is attached to the inner wall of the processing chamber 50. With the substrate W or dummy substrate DW held by the spin chuck 51, the spin base 51A is rotated and cleaning liquid is ejected from the cleaning liquid nozzle 64.

The underside (end surface) of the cleaning liquid nozzle 64 is flat, but grooves or irregularities may be formed on the underside.

The cleaning liquid ejected from the cleaning liquid nozzle 64 bounces off the top surface of the substrate W or the top surface of the dummy substrate DW, causing the cleaning liquid to splash inside the processing chamber 50. By splashing the cleaning liquid in this manner, various components (such as the rear surface shielding plate 170 or the processing cup 511) arranged inside the processing chamber 50 can be cleaned.

The processing cup 511 is arranged to surround the periphery of the spin chuck 51, and is raised and lowered vertically by a motor (not shown). The upper part of the processing cup 511 is raised and lowered between an upper position where its upper end is above the substrate W or dummy substrate DW held by the spin base 51A, and a lower position where it is below the substrate W or dummy substrate DW.

The processing liquid that splashes outward from the upper surface of the substrate W or the upper surface of the dummy substrate DW is received on the inner surface of the processing cup 511. The processing liquid received in the processing cup 511 is then appropriately drained to the outside of the processing chamber 50 through a drainage port 513 provided at the bottom of the processing chamber 50 and on the inside of the processing cup 511.

In addition, an exhaust port 515 is provided on the side of the processing chamber 50. The atmosphere inside the processing chamber 50 is appropriately exhausted to the outside of the processing chamber 50 through the exhaust port 515.

Figure 2 is a functional block diagram showing an example of the connection relationship between each element of the substrate processing apparatus 100 and the control unit 7.

The hardware configuration of the control unit 7 is the same as that of a general computer. That is, the control unit 7 includes a central processing unit (CPU) 71 that performs various arithmetic processing, a read-only memory (ROM) 72 that stores a basic program, a random access memory (RAM) 73 that is a readable and writable memory that stores various information, and a non-transient storage unit 74 that stores control applications (programs) or data, etc.

The CPU 71, ROM 72, RAM 73 and memory unit 74 are connected to each other via bus wiring 75 etc.

The control application or data may be provided to the control unit 7 in a state in which it is recorded on a non-transient recording medium (such as a semiconductor memory, an optical medium, or a magnetic medium). In this case, it is preferable that a reading device that reads the control application or data from the recording medium is connected to the bus wiring 75.

The control application or data may also be provided to the control unit 7 from a server or the like via a network. In this case, it is preferable that a communication unit that performs network communication with an external device is connected to the bus wiring 75.

An input unit 76 and a display unit 77 are connected to the bus wiring 75. The input unit 76 includes various input devices such as a keyboard and a mouse. The operator inputs various information to the control unit 7 via the input unit 76. The display unit 77 is composed of a display device such as an LCD monitor, and displays various information.

The control unit 7 is connected to each of the operating parts (e.g., the chemical liquid valve 56, the circulation valve 58, the rinse liquid valve 62, the cleaning liquid valve 66, the moving part 190, the rotary drive source 152A, the rotary drive source 160A, the shutter 50C or the spin motor 51D, etc.) and controls their operation.

<Operation of the Substrate Processing Apparatus>
Next, the operation of the substrate processing apparatus 100 according to this embodiment will be described with reference to FIGS.

Figure 3 is a sequence diagram showing an example of the operation of the substrate processing apparatus 100. Also, Figure 4 is a flowchart showing an example of the operation of the substrate processing apparatus 100 corresponding to Figure 3.

As shown in Fig. 3, a chemical treatment is first performed (step ST1 in Fig. 4). In the chemical treatment, a chemical is discharged from the chemical nozzle 52 under the control of the control unit 7, thereby performing an etching process or the like on the substrate W. For example, the etching process on the substrate W is performed using fluoronitric acid, which is a mixed solution of hydrofluoric acid (HF) and nitric acid ( _HNO3 ).

3, in the chemical liquid processing, the moving unit 190 raises and lowers the back surface shielding plate 170 under the control of the control unit 7 so that the width of the gap region 180 in the Z direction is, for example, 0.5 mm. In the chemical liquid processing, the spin motor 51D is driven under the control of the control unit 7 so that the substrate W rotates at a rotation speed of, for example, 200 rpm or more and 1500 rpm or less. In the chemical liquid processing, in order to prevent the chemical liquid from flowing around the lower surface (back surface) of the substrate W, an inert gas such as nitrogen (N ₂ ) is supplied into the gap region 180 from the back surface shielding plate 170 side at, for example, 400 LPM. However, the supply of the inert gas is not essential. In addition, the supply mode of the inert gas is not limited to the mode shown in the present embodiment, and may be, for example, a mode in which the inert gas is supplied into the gap region 180 from the periphery or above the substrate W.

Figure 5 is a detailed diagram showing the configuration including the substrate W and the back shield plate 170 when performing chemical processing.

As shown in the example in FIG. 5, in chemical processing, the chemical solution 252 is discharged from the chemical solution nozzle 52, and the chemical solution 252 spreads evenly over the upper surface of the substrate W. At this time, the width of the gap region 180 in the Z direction is, for example, 0.5 mm.

In addition, by supplying an inert gas such as nitrogen ( _N2 ) from a gas supply unit (not shown) from, for example, the central portion of the upper surface of the back surface shielding plate 170 adjacent to the spin chuck 51 toward the underside (backside) of the substrate W, the flow of the inert gas from the central portion toward the outer edge of the underside (backside) of the substrate W suppresses the chemical solution 252 from flowing around to the underside (backside) of the substrate W.

Next, a cleaning process is performed (step ST2 in FIG. 4). In the cleaning process, the processed substrate W is first replaced with a dummy substrate DW. Then, cleaning liquid 264 is ejected from the cleaning liquid nozzle 64 under the control of the control unit 7, thereby washing away any deposits on the back surface shielding plate 170 and further on the processing cup 511, etc. (see FIG. 1).

Here, the cleaning liquid 264 discharged from the cleaning liquid nozzle 64 also flows around to the underside (rear side) of the dummy substrate DW, so that the cleaning liquid is also supplied to the rear side shielding plate 170.

As shown in FIG. 3, in the cleaning process, the rear surface shielding plate 170 is cleaned. In addition, in the cleaning process, the moving unit 190 raises and lowers the rear surface shielding plate 170 under the control of the control unit 7 so that the width of the gap region 180 in the Z direction is, for example, 3 mm. In addition, in the cleaning process, the spin motor 51D is driven under the control of the control unit 7 so that the dummy substrate DW rotates at a rotation speed of, for example, 50 rpm or more and 200 rpm or less. In addition, in the cleaning process, an inert gas such as nitrogen (N ₂ ) is supplied from the rear surface shielding plate 170 side into the gap region 180 at, for example, 400 LPM. However, the supply of the inert gas is not essential. In addition, the supply mode of the inert gas is not limited to the mode shown in the present embodiment, and may be, for example, a mode in which the inert gas is supplied into the gap region 180 from the periphery or above the substrate W.

In the above cleaning process, cleaning is performed with the cleaning liquid 264 ejected from the cleaning liquid nozzle 64. However, for example, in a rinsing process in which rinsing liquid is ejected from the rinsing liquid nozzle 60, the rear surface shielding plate 170 may be cleaned by supplying the rinsing liquid to the gap region 180.

Figure 6 is a detailed diagram showing the configuration including the dummy substrate DW and the back shield plate 170 when performing the cleaning process.

As shown in the example in FIG. 6, during the cleaning process, cleaning liquid 264 is ejected from the cleaning liquid nozzle 64, and the cleaning liquid 264 spreads evenly over the upper surface of the dummy substrate DW.

At this time, the width of the gap region 180 in the Z direction is, for example, 3 mm, and the cleaning liquid that reaches the outer edge of the dummy substrate DW flows around to the lower surface (rear surface) side of the dummy substrate DW and toward the rear surface shielding plate 170.

Next, a drying process is performed (step ST3 in FIG. 4). In the drying process, the dummy substrate DW and the back surface shielding plate 170 are dried by rotating the spin base 51A under the control of the control unit 7.

3, in the drying process, the moving unit 190 raises and lowers the rear surface shielding plate 170 under the control of the control unit 7 so that the width of the gap region 180 in the Z direction is, for example, 0.5 mm. In this state, the lower surface of the dummy substrate DW and the upper surface of the opposing rear surface shielding plate 170 are close to each other. In the drying process, the spin motor 51D is driven under the control of the control unit 7 so that the dummy substrate DW rotates at a rotation speed of, for example, 2500 rpm. In the drying process, an inert gas such as nitrogen (N ₂ ) is supplied into the gap region 180 from the rear surface shielding plate 170 side at, for example, 400 LPM. However, the supply of the inert gas is not essential. In addition, the supply mode of the inert gas is not limited to the mode shown in this embodiment, and may be, for example, a mode in which the inert gas is supplied into the gap region 180 from the periphery or above the substrate W.

Figure 7 is a detailed diagram showing the configuration including the dummy substrate DW and the back shield plate 170 when performing the drying process.

As shown in the example in FIG. 7, during the drying process, the cleaning liquid 264 adhering to the dummy substrate DW and the back surface shielding plate 170 is scattered by the rotation of the dummy substrate DW.

Specifically, the cleaning liquid 264 adhering to the upper and lower surfaces of the dummy substrate DW is subjected to centrifugal force generated by the rotation of the dummy substrate DW, and is scattered from the outer edge of the dummy substrate DW to the periphery of the dummy substrate DW.

In addition, the cleaning liquid 264 adhering to both the underside of the dummy substrate DW and the upper surface of the rear shielding plate 170 (i.e., cleaning liquid 264 whose droplet size is larger than the width of the gap region 180 in the Z direction) is pushed out to the outer edge of the dummy substrate DW because the side in contact with the underside of the dummy substrate DW receives the centrifugal force generated by the rotation of the dummy substrate DW, and is then scattered around the dummy substrate DW.

In addition, the cleaning liquid 264 adhering only to the upper surface of the rear shield plate 170 (i.e., cleaning liquid 264 whose droplet size is smaller than the width of the gap region 180 in the Z direction) is pushed outward in the system direction toward the outer edge of the dummy substrate DW by the flow of the atmosphere (including the fine particles suspended in the gap region 180) caused by the rotation of the dummy substrate DW, and is further scattered around the dummy substrate DW.

In the center of the dummy substrate DW, the cleaning liquid 264 adhering to the lower surface of the dummy substrate DW and the cleaning liquid 264 adhering to the upper surface of the rear surface shielding plate 170 are pushed out to the outer edge of the dummy substrate DW mainly by the inert gas supplied from the rear surface shielding plate 170 side.

On the other hand, at the outer edge of the dummy substrate DW, the contribution of the centrifugal force generated by the rotation of the dummy substrate DW is large, which compensates for the weaker contribution of the inert gas supplied from the center of the rear surface shielding plate 170.

Here, the lower surface of the rotating dummy substrate DW and the upper surface of the back surface shielding plate 170 may be parallel to each other. In such a case, the contribution of the centrifugal force (or the atmosphere toward the outside in the system direction) generated by the rotation of the dummy substrate DW is uniformly and efficiently transmitted to the cleaning liquid 264 adhering to the back surface shielding plate 170, facilitating the removal of the cleaning liquid 264.

In this manner, the cleaning liquid 264 adhering to the dummy substrate DW and the rear surface shielding plate 170 is removed by rotating the dummy substrate DW.

It is desirable that all of the cleaning liquid 264 be removed in the drying process, but this is not necessarily the case. As described below, even if some of the cleaning liquid remains, it is possible to continue with chemical treatment or other processes.

In addition, in this embodiment, the dummy substrate DW is adsorbed to the spin base 51A during the drying process, and the cleaning liquid 264 remaining in the gap region 180 is removed by rotating the dummy substrate DW, but a substrate W that has been subjected to chemical processing may be adsorbed to the spin base 51A. In that case, the cleaning liquid 264 remaining in the gap region 180 is removed by rotating the substrate W.

However, when the drying process is performed using the dummy substrate DW, since the dummy substrate DW is a substrate that has not been subjected to chemical treatment, and is a substrate of a known shape that is less susceptible to deformation such as warping compared to the substrate W, the width in the Z direction of the gap region 180 during the drying process can be controlled with high precision.

Next, it is determined whether or not another chemical treatment (on the same or another substrate W) needs to be performed (step ST4 in FIG. 4).

If another chemical treatment is required, that is, if the result corresponds to "YES" branching from step ST4, an example of which is shown in FIG. 4, the process returns to step ST1, an example of which is shown in FIG. 4.

On the other hand, if no other chemical treatment is required, that is, if the result corresponds to "NO" branching from step ST4 as shown in the example of FIG. 4, the operation ends.

Now, when returning to step ST1, an example of which is shown in FIG. 4, to perform another chemical solution treatment, the Z-direction width of the gap region 180 in the other chemical solution treatment can be made wider than the Z-direction width of the gap region 180 in the drying treatment that has already been completed. For example, the Z-direction width of the gap region 180 in the drying treatment can be 0.3 mm, and the Z-direction width of the gap region 180 in the chemical solution treatment can be 0.5 mm.

By controlling the width of the gap region 180 in the Z direction in this manner, even if cleaning liquid 264 remains on the upper surface of the rear surface shielding plate 170 in the previous drying process, the particle size of the remaining cleaning liquid 264 is considered to be smaller than the width of the gap region 180 in the Z direction in the drying process, so that it is possible to prevent the lower surface of the substrate W adsorbed to the spin base 51A from coming into contact with the remaining cleaning liquid 264 during chemical processing. Therefore, contamination of the substrate W can be suppressed.

Second Embodiment
A processing liquid removal method and a processing liquid removal device according to the present embodiment will be described. In the following description, components similar to those described in the above embodiment will be denoted by the same reference numerals, and detailed description thereof will be omitted as appropriate.

<Configuration of the Substrate Processing Apparatus>
The substrate processing apparatus 100 according to this embodiment has the same configuration as that shown in the first embodiment, and therefore a detailed description thereof will be omitted. However, in this embodiment, the rear surface shielding plate 170 may not be provided.

<Operation of the Substrate Processing Apparatus>
Next, the operation of the substrate processing apparatus 100 according to this embodiment will be described with reference to FIG.

First, chemical treatment and cleaning are performed as in the first embodiment.

Next, a drying process is performed. In the drying process, the dummy substrate DW and the cleaning liquid nozzle 64 are dried by rotating the spin base 51A under the control of the control unit 7.

Figure 8 is a detailed diagram showing the configuration including the dummy substrate DW and the cleaning liquid nozzle 64 when performing a drying process.

As shown in the example in FIG. 8, in the drying process, the cleaning liquid 264 adhering to the dummy substrate DW and the cleaning liquid nozzle 64 is scattered by the rotation of the dummy substrate DW. At this time, the lower surface (end surface) of the cleaning liquid nozzle 64 faces the upper surface of the dummy substrate DW. Note that when removing the cleaning liquid 264 adhering to the end surface of the cleaning liquid nozzle 64, the control unit 7 positions the cleaning liquid nozzle 64 on the outer edge side of the center of the dummy substrate DW.

Specifically, the cleaning liquid 264 adhering to the upper surface of the dummy substrate DW is subjected to centrifugal force generated by the rotation of the dummy substrate DW, and is scattered from the outer edge of the dummy substrate DW to the periphery of the dummy substrate DW.

In addition, the cleaning liquid 264 adhering to both the upper surface of the dummy substrate DW and the lower surface (end surface) of the cleaning liquid nozzle 64 (i.e., cleaning liquid 264 whose droplet size is larger than the width of the gap region 180A in the Z direction) is pushed out to the outer edge of the dummy substrate DW because the side in contact with the upper surface of the dummy substrate DW receives the centrifugal force generated by the rotation of the dummy substrate DW, and is then scattered around the dummy substrate DW.

In addition, the cleaning liquid 264 adhering only to the lower surface (end surface) of the cleaning liquid nozzle 64 (i.e., cleaning liquid 264 with droplet size smaller than the width of the gap region 180A in the Z direction) is pushed out to the outer edge of the dummy substrate DW by the flow of the atmosphere (including the fine particles suspended in the gap region 180A) toward the outside in the system direction, which is generated by the rotation of the dummy substrate DW, and is further scattered around the dummy substrate DW.

In particular, at the outer edge of the dummy substrate DW, the centrifugal force generated by the rotation of the dummy substrate DW has a large contribution, so if the cleaning liquid nozzle 64 is positioned to correspond to the outer edge of the dummy substrate DW, the cleaning liquid 264 can be effectively removed.

The position of the cleaning liquid nozzle 64 during the drying process is not limited to the position corresponding to the outer edge of the dummy substrate DW as shown in FIG. 8.

In this way, the cleaning liquid 264 adhering to the dummy substrate DW and the lower surface (end surface) of the cleaning liquid nozzle 64 is removed by rotating the dummy substrate DW.

In the present embodiment, the dummy substrate DW is adsorbed to the spin base 51A during the drying process, and the cleaning liquid 264 remaining in the gap region 180A is removed by rotating the dummy substrate DW. However, a substrate W that has been subjected to chemical processing may be adsorbed to the spin base 51A. In that case, the cleaning liquid 264 remaining in the gap region 180A is removed by rotating the substrate W. Alternatively, the substrate W or the dummy substrate DW may not be adsorbed to the spin base 51A. In that case, the cleaning liquid 264 remaining in the gap region between the upper surface of the spin base 51A and the lower surface (end surface) of the cleaning liquid nozzle 64 is removed by rotating the spin base 51A.

However, when the drying process is performed using the dummy substrate DW, since the dummy substrate DW is a substrate that has not been subjected to chemical treatment, and is a substrate of a known shape that is less susceptible to deformation such as warping compared to the substrate W, the width in the Z direction of the gap region 180A during the drying process can be controlled with high precision.

In addition, in this embodiment, the drying process is performed with the lower surface (end surface) of the cleaning liquid nozzle 64 facing the upper surface of the dummy substrate DW, but the drying process may also be performed with the lower surface (end surface) of another nozzle, for example, the chemical liquid nozzle 52 or the rinsing liquid nozzle 60 facing the upper surface of the dummy substrate DW, to remove the corresponding processing liquid.

Third Embodiment
A processing liquid removal method and a processing liquid removal device according to the present embodiment will be described. In the following description, components similar to those described in the above embodiment will be denoted by the same reference numerals, and detailed description thereof will be omitted as appropriate.

In this embodiment, the functions and operations of the substrate processing apparatus 100B as a processing liquid removal apparatus will be particularly described.

<Configuration of the Substrate Processing Apparatus>
9 is a diagram illustrating an example of the configuration of a substrate processing apparatus 100B according to the present embodiment. In order to facilitate understanding of the configuration, some components may be omitted or illustrated in a simplified form in the drawing.

The substrate processing apparatus 100B is a single-wafer processing apparatus that processes disk-shaped substrates W, such as semiconductor wafers, one by one. The substrate processing apparatus 100B performs various processes (cleaning process, etching process, etc.) on the substrates W, such as fluid processing using a processing liquid (i.e., processing liquid including a chemical liquid, cleaning liquid, or rinsing liquid) or gas, processing using electromagnetic waves such as ultraviolet light, or physical cleaning processing (e.g., brush cleaning or spray nozzle cleaning, etc.).

In addition, in the substrate processing apparatus 100B, for example, when cleaning the inside of the processing chamber described below, a dummy substrate DW is placed instead of the substrate W.

As shown in the example in FIG. 9, the substrate processing apparatus 100B includes a box-shaped processing chamber 50, a spin chuck 51, a back surface shielding plate 170, a moving part 190, a cylindrical processing cup 511, and a front surface shielding plate 210 arranged opposite the upper surface of the substrate W or dummy substrate DW. Note that the back surface shielding plate 170 does not necessarily have to be provided.

As shown in FIG. 9, the center of the surface blocking plate 210 is provided with a chemical nozzle 352 for discharging a chemical solution toward the top surface of the substrate W held by the spin chuck 51, a rinsing liquid nozzle 360 for discharging a rinsing liquid toward the top surface of the substrate W, and a cleaning liquid nozzle 364 for discharging a cleaning liquid toward the top surface of the substrate W.

The surface blocking plate 210 is a plate member having a diameter approximately equal to that of the substrate W. However, the diameter of the surface blocking plate 210 may be larger or smaller than the diameter of the substrate W.

In addition, the underside of the surface blocking plate 210 is flat, but the underside may have grooves or irregularities formed thereon.

The surface blocking plate 210 can be moved in the Z direction in FIG. 9 by a moving unit (not shown), and the Z-direction width of the gap area 180B between the lower surface of the surface blocking plate 210 and the upper surface of the substrate W can be adjusted by the control of the control unit 7 in FIG. 2.

The chemical liquid nozzle 352 is supplied with the chemical liquid from the chemical liquid tank 53 via the chemical liquid piping 54. The chemical liquid piping 54 is also provided with a liquid delivery device 55 (e.g., a pump) that delivers the chemical liquid from the chemical liquid tank 53 to the chemical liquid piping 54, and a chemical liquid valve 56 that opens and closes the inside of the chemical liquid piping 54.

Rinse liquid nozzle 360 is supplied with rinse liquid from a rinse liquid supply source (not shown) via rinse liquid piping 61. Rinse liquid piping 61 is also provided with a rinse liquid valve 62 that switches between supplying and stopping the rinse liquid. DIW (deionized water) or the like is used as the rinse liquid.

After the chemical liquid is supplied to the substrate W by the chemical liquid nozzle 352, the rinsing liquid is supplied to the substrate W from the rinsing liquid nozzle 360, thereby washing away the chemical liquid adhering to the substrate W and the surface shielding plate 210.

The cleaning liquid nozzle 364 is supplied with cleaning liquid from a cleaning liquid supply source (not shown) via a cleaning liquid pipe 65. The cleaning liquid pipe 65 is also provided with a cleaning liquid valve 66 that switches between supplying and stopping the cleaning liquid. DIW (deionized water) or the like is used as the cleaning liquid.

<Operation of the Substrate Processing Apparatus>
Next, the operation of the substrate processing apparatus 100B according to the present embodiment will be described with reference to FIG.

First, a chemical treatment is performed. In the chemical treatment, a chemical is discharged from the chemical nozzle 352 under the control of the control unit 7, thereby performing an etching treatment or the like on the substrate W. For example, the etching treatment on the substrate W is performed using fluoronitric acid, which is a mixed liquid of hydrofluoric acid (HF) and nitric acid (HNO ₃ ).

Next, a cleaning process is performed. In the cleaning process, cleaning liquid 264 is ejected from the cleaning liquid nozzle 364 under the control of the control unit 7, thereby washing away any deposits on the surface blocking plate 210, etc.

In the above cleaning process, cleaning is performed with cleaning liquid 264 ejected from cleaning liquid nozzle 364. However, for example, in a rinsing process in which rinsing liquid is ejected from rinsing liquid nozzle 360, the rinsing liquid may be supplied to gap region 180B to clean surface blocking plate 210.

Next, a drying process is performed. In the drying process, the spin base 51A is rotated under the control of the control unit 7 to dry the substrate W (or dummy substrate DW) and the surface shielding plate 210.

Figure 10 is a detailed diagram showing the configuration including the substrate W (or dummy substrate DW) and the surface shielding plate 210 when performing drying processing.

As shown in the example in FIG. 10, during the drying process, the cleaning liquid 264 adhering to the substrate W (or dummy substrate DW) and the surface blocking plate 210 is scattered by the rotation of the substrate W (or dummy substrate DW).

Specifically, the cleaning liquid 264 adhering to the upper surface of the substrate W is subjected to centrifugal force generated by the rotation of the substrate W, and is scattered from the outer edge of the substrate W to the surrounding area of the substrate W.

In addition, the cleaning liquid 264 adhering to both the upper surface of the substrate W and the lower surface of the surface shielding plate 210 (i.e., the cleaning liquid 264 whose droplet size is larger than the width of the gap region 180B in the Z direction) is pushed out to the outer edge of the substrate W and further splashed around the substrate W because the side in contact with the upper surface of the substrate W receives the centrifugal force generated by the rotation of the substrate W.

In addition, the cleaning liquid 264 adhering only to the underside of the surface shielding plate 210 (i.e., cleaning liquid 264 with droplets smaller than the width of the gap region 180B in the Z direction) is pushed outward in the system direction toward the outer edge of the substrate W by the flow of atmosphere (including fine particles suspended in the gap region 180B) caused by the rotation of the substrate W, and is then scattered around the substrate W.

In this manner, the cleaning liquid 264 adhering to the substrate W and the underside of the surface shielding plate 210 is removed by rotating the substrate W.

It is also possible that the substrate W or dummy substrate DW is not adsorbed to the spin base 51A. In that case, the cleaning liquid 264 remaining in the gap area between the upper surface of the spin base 51A and the lower surface of the surface shielding plate 210 is removed by the rotation of the spin base 51A.

<Effects of the above-described embodiment>
Next, examples of effects obtained by the above-described embodiment will be described. Note that in the following description, the effects will be described based on the specific configurations exemplified in the above-described embodiment, but the effects may be replaced with other specific configurations exemplified in the present specification as long as the same effects are obtained.

The replacement may also be made across multiple embodiments. That is, configurations shown as examples in different embodiments may be combined to produce the same effect.

According to the embodiment described above, the processing liquid removal device includes a rotating unit, a facing unit, a processing liquid supply unit, and a control unit 7. Here, the rotating unit corresponds to, for example, any one of the rotatable spin base 51A or the dummy substrate DW (or substrate W) adsorbed to the spin base 51A. The facing unit corresponds to, for example, any one of the back surface shielding plate 170, the chemical liquid nozzle 52 facing the substrate W (or dummy substrate DW), the rinse liquid nozzle 60, the cleaning liquid nozzle 64, and the front surface shielding plate 210. The processing liquid supply unit corresponds to, for example, any one of the chemical liquid nozzle 52, the rinse liquid nozzle 60, and the cleaning liquid nozzle 64. The dummy substrate DW has a first surface (lower surface). The dummy substrate DW is rotatable around the normal direction of the first surface (lower surface) as the rotation axis (i.e., around the rotation axis Z). The rear surface shielding plate 170 has a second surface (upper surface) that faces the first surface. The cleaning liquid nozzle 64 supplies cleaning liquid 264 to a gap region 180, which is the region between the lower surface of the dummy substrate DW and the upper surface of the rear surface shielding plate 170. The control unit 7 removes the cleaning liquid 264 adhering to the upper surface of the rear surface shielding plate 170 by rotating the dummy substrate DW while bringing the lower surface of the dummy substrate DW and the upper surface of the rear surface shielding plate 170 into close proximity.

With this configuration, by rotating the rotating part (dummy substrate DW) while bringing the lower surface of the rotating part (dummy substrate DW) and the upper surface of the opposing part (rear surface shielding plate 170) into close proximity, the processing liquid (cleaning liquid 264) adhering to the upper surface of the opposing part (rear surface shielding plate 170) can be removed by the direct or indirect contribution of the centrifugal force generated by the rotation of the rotating part (dummy substrate DW).

The same effect can be achieved even if at least one of the other configurations whose examples are shown in this specification is appropriately added to the configuration described above, that is, even if another configuration whose examples are shown in this specification but not mentioned as a configuration described above is appropriately added.

In addition, according to the embodiment described above, the back surface shielding plate 170 does not rotate. With this configuration, even if the opposing back surface shielding plate 170 does not rotate and processing liquid is likely to remain, the dummy substrate DW, which is the rotating part, can be rotated in close proximity to the back surface shielding plate 170, and the centrifugal force generated by the rotation of the dummy substrate DW can be utilized to remove the cleaning liquid 264 adhering to the upper surface of the back surface shielding plate 170.

Furthermore, according to the embodiment described above, the control unit 7 rotates the dummy substrate DW in a state in which the cleaning liquid 264 adhering to the upper surface of the back surface shielding plate 170 is in contact with the lower surface of the dummy substrate DW. With this configuration, the cleaning liquid 264 adhering to both the lower surface of the dummy substrate DW and the upper surface of the back surface shielding plate 170 is pushed out to the outer edge of the dummy substrate DW by the centrifugal force generated by the rotation of the dummy substrate DW on the side in contact with the lower surface of the dummy substrate DW, and is further scattered around the dummy substrate DW. Therefore, the cleaning liquid 264 adhering to the upper surface of the back surface shielding plate 170 can be effectively removed.

Furthermore, according to the embodiment described above, the processing liquid removal device includes a moving unit 190 for moving at least one of the dummy substrate DW or the back surface shielding plate 170 closer to or farther away from the other. The control unit 7 then rotates the dummy substrate DW in a state in which the lower surface of the dummy substrate DW and the upper surface of the back surface shielding plate 170 are brought close to each other by the moving unit 190. According to this configuration, the moving unit 190 can move the dummy substrate DW and the back surface shielding plate 170 closer to each other while relatively controlling the distance between them.

In addition, according to the embodiment described above, while the cleaning liquid 264 is being supplied to the gap region 180 by the cleaning liquid nozzle 64, the control unit 7 separates the lower surface of the dummy substrate DW from the upper surface of the back surface shielding plate 170 by the moving unit 190, and when removing the cleaning liquid 264 adhering to the upper surface of the back surface shielding plate 170, the control unit 7 brings the lower surface of the dummy substrate DW and the upper surface of the back surface shielding plate 170 closer together by the moving unit 190. With this configuration, when supplying the cleaning liquid 264 to the gap region 180, the width of the gap region 180 in the Z direction is made wider so that the cleaning liquid 264 can easily penetrate into the gap region 180 as much as possible, while when removing the cleaning liquid 264 adhering to the upper surface of the back surface shielding plate 170, the lower surface of the dummy substrate DW and the upper surface of the back surface shielding plate 170 can be brought closer together to effectively remove the cleaning liquid 264.

Furthermore, according to the embodiment described above, the second surface of the facing portion is an end surface of a nozzle (chemical liquid nozzle 52, cleaning liquid nozzle 64, or rinsing liquid nozzle 60) that is movable in a plane along the first surface (top surface) of the substrate W (or dummy substrate DW) and faces the top surface of the substrate W (or dummy substrate DW). When removing the cleaning liquid 264 adhering to the end surface of the nozzle, the control unit 7 positions the nozzle on the outer edge side of the center of the dummy substrate DW. With this configuration, the contribution of the centrifugal force generated by the rotation of the dummy substrate DW becomes large at the outer edge of the dummy substrate DW, so that the cleaning liquid 264 can be effectively removed.

Furthermore, according to the embodiment described above, the processing liquid removal device includes at least a gas supply unit (not shown) that supplies gas to the gap region 180 when removing the cleaning liquid 264 adhering to the upper surface of the rear surface shielding plate 170. With such a configuration, in addition to the contribution of the centrifugal force due to the rotation of the dummy substrate DW, the cleaning liquid 264 is also scattered by the supplied gas, so that the cleaning liquid 264 can be effectively removed.

Furthermore, according to the embodiment described above, the rotating part is a dummy substrate DW, which is a substrate of a predetermined shape. With this configuration, since the dummy substrate DW is a substrate that has not been subjected to chemical treatment, etc., and is a substrate of a known shape that is less likely to warp or deform compared to the substrate W, the width in the Z direction of the gap region 180 during the drying process can be controlled with high precision.

Furthermore, according to the embodiment described above, the processing liquid removal device includes a heating unit that heats the upper surface of the back surface shielding plate 170. With this configuration, by providing a heater that heats the opposing surface of the opposing part (i.e., the upper surface of the back surface shielding plate 170, the lower surface of the cleaning liquid nozzle 64, or the lower surface of the front surface shielding plate 210), it is possible to promote drying of the opposing surface during the drying process.

Furthermore, according to the embodiment described above, the cleaning liquid 264 is the chemical liquid 252 for treating the dummy substrate DW, or the cleaning liquid 264 for cleaning at least one of the dummy substrate DW or the rear surface shielding plate 170. With this configuration, regardless of the processing liquid, the processing liquid can be effectively removed by a drying process that brings the rotating part and the opposing part into close proximity.

In addition, according to the embodiment described above, the lower surface of the dummy substrate DW and the upper surface of the back surface shielding plate 170 are separated while the cleaning liquid 264 is being supplied to the gap region 180, and then the lower surface of the dummy substrate DW and the upper surface of the back surface shielding plate 170 are brought close to each other in the process of removing the cleaning liquid 264. With this configuration, when the cleaning liquid 264 is supplied to the gap region 180, the width of the gap region 180 in the Z direction is made wide so that the cleaning liquid 264 can easily penetrate into the gap region 180 as much as possible, while when removing the cleaning liquid 264 adhering to the upper surface of the back surface shielding plate 170, the lower surface of the dummy substrate DW and the upper surface of the back surface shielding plate 170 can be brought close to each other in order to effectively remove the cleaning liquid 264.

In addition, according to the embodiment described above, after the process of removing the cleaning liquid 264, the lower surface of the dummy substrate DW and the upper surface of the back surface shielding plate 170 are separated while the chemical liquid 252 is being supplied to the gap region 180. With this configuration, even if the cleaning liquid 264 remains on the upper surface of the back surface shielding plate 170 in the previous drying process, the particle size of the remaining cleaning liquid 264 is considered to be smaller than the width in the Z direction of the gap region 180 in the drying process, so that during the next chemical liquid processing, the lower surface of the substrate W adsorbed to the spin base 51A can be prevented from coming into contact with the remaining cleaning liquid 264. Therefore, contamination of the substrate W can be prevented.

<Modifications of the above-described embodiments>
In the embodiment described above, the cleaning process and the drying process may be performed collectively after the chemical liquid processing for a plurality of substrates W has been completed.

In the embodiment described above, rotation of the substrate W or dummy substrate DW is used in a drying process to remove the cleaning liquid after the cleaning liquid is supplied in the cleaning process, but it may also be applied after a substrate process other than the cleaning process, such as a chemical liquid process or a rinsing process, or may be applied during the substrate process.

In the embodiments described above, a heater may be provided to heat the facing surface of the facing part that faces the rotating substrate W or dummy substrate DW (i.e., the upper surface of the back surface shielding plate 170, the lower surface of the cleaning liquid nozzle 64, or the lower surface of the front surface shielding plate 210). The heater may be built into the facing surface, or may be provided separately. The temperature of the heater is controlled, for example, by the control unit 7 shown in FIG. 2.

By providing a heater to heat the opposing surface, the drying of the opposing surface during the drying process can be accelerated.

In the embodiments described above, the material, composition, dimensions, shape, relative positional relationship, and implementation conditions of each component may be described, but these are merely examples in all respects and are not limited to those described in this specification.

Therefore, countless variations and equivalents not shown are contemplated within the scope of the technology disclosed in this specification. For example, this includes cases where at least one component is modified, added, or omitted, and even cases where at least one component in at least one embodiment is extracted and combined with a component in another embodiment.

In addition, unless a contradiction arises, any component described in the above embodiments as having "one" may be considered to have "one or more."

Furthermore, each component in the embodiments described above is a conceptual unit, and the scope of the technology disclosed in this specification includes cases where one component is made up of multiple structures, where one component corresponds to a part of a structure, and even where multiple components are provided in one structure.

Furthermore, each component in the embodiments described above includes structures having other structures or shapes as long as they perform the same function.

Furthermore, the descriptions in this specification are incorporated by reference for all purposes related to this technology, and none of them are admitted to be prior art.

In addition, in the embodiments described above, when a material name is mentioned without being specifically specified, it is assumed that the material in question contains other additives, such as alloys, unless a contradiction arises.

Furthermore, each of the components described in the above embodiments is considered to be software or firmware, and also the corresponding hardware, and in both concepts, each component is referred to as a "unit" or "processing circuitry", etc.

7 Control unit, 50 Processing chamber, 50A Partition wall, 50B Opening, 50C Shutter, 51 Spin chuck, 51A Spin base, 51C Rotating shaft, 51D Spin motor, 52, 352 Chemical nozzle, 53 Chemical tank, 54 Chemical piping, 55 Liquid delivery device, 56 Chemical valve, 57 Circulation piping, 58 Circulation valve, 59 Temperature control device, 60, 360 Rinse liquid nozzle, 61 Rinse liquid piping, 62 Rinse liquid valve, 64, 364 Cleaning liquid nozzle, 65 Cleaning liquid piping, 66 Cleaning liquid valve, 71 CPU, 72 ROM, 73 RAM, 74 Memory unit, 75 Bus wiring, 76 Input unit, 77 Display unit, 100, 100B Substrate processing device, 152 Chemical arm, 152A, 160A Rotation drive source, 152B, 160B shaft body, 152C, 160C arm portion, 160 rinse liquid arm, 170 back surface blocking plate, 180, 180A, 180B gap area, 190 moving portion, 210 front surface blocking plate, 252 chemical solution, 264 cleaning solution, 511 processing cup, 513 drainage port, 515 exhaust port.

Claims (24)

A method for removing a processing liquid using a processing device including a rotating part having a first surface and rotatable about a rotation axis in a normal direction of the first surface, and an opposing part having a second surface opposing the first surface,
supplying a treatment liquid to at least a gap region between the first surface and the second surface;
removing the processing liquid adhering to the second surface by rotating the rotating unit while the first surface and the second surface are brought into close proximity to each other;
While the processing liquid is being supplied to the gap region, the first surface and the second surface are spaced apart from each other more than in the step of removing the processing liquid.
Method for removing processing fluid. a rotating part having a first surface and rotatable about a rotation axis in a normal direction of the first surface;
a second surface facing the first surface of a nozzle movable along a plane along the first surface, and a facing portion that is a lower surface of the nozzle facing the first surface,
supplying a treatment liquid to at least a gap region between the first surface and the second surface;
and removing the processing liquid adhering to the second surface by rotating the rotating unit while positioning the lower surface of the nozzle on the outer edge side relative to the center of the rotating unit and bringing the first surface and the second surface into close proximity to each other.
Method for removing processing fluid. a rotating part having a first surface and rotatable about a rotation axis in a normal direction of the first surface;
a processing liquid removal method using a processing apparatus including a counter part having a second surface facing the first surface and not rotating,
supplying a treatment liquid to at least a gap region between the first surface and the second surface;
and removing the processing liquid adhering to the second surface by bringing the first surface and the second surface close to each other and rotating the rotating unit in a state in which the processing liquid adhering to the second surface is in contact with the first surface.
Method for removing processing fluid. The method for removing a processing liquid according to claim 1 or 2,
The opposing portion does not rotate.
Method for removing processing fluid. The method for removing a processing liquid according to claim 1 or 2,
In the step of removing the processing liquid, the rotating unit is rotated in a state in which the processing liquid adhering to the second surface is in contact with the first surface.
Method for removing processing fluid. The method for removing a processing liquid according to claim 1,
the first surface and the second surface are spaced apart while the processing liquid is being supplied to the gap region, and then the first surface and the second surface are brought close to each other in a process of removing the processing liquid.
Method for removing processing fluid. The method for removing a processing liquid according to claim 1,
After the step of removing the processing liquid, the first surface and the second surface are spaced apart while the processing liquid is being supplied to the gap region.
Method for removing processing fluid. A method for removing a processing liquid according to any one of claims 1 to 7,
In the step of removing the processing liquid, a gas is supplied to the gap region.
Method for removing processing fluid. A method for removing a processing liquid according to any one of claims 1 to 8,
The rotating part is a dummy substrate which is a substrate having a predetermined shape.
Method for removing processing fluid. A method for removing a processing liquid according to any one of claims 1 to 9,
In the step of removing the processing liquid, the second surface is heated.
Method for removing processing fluid. A method for removing a processing liquid according to any one of claims 1 to 10,
the processing liquid is a chemical liquid for processing the rotating part, or a cleaning liquid for cleaning at least one of the rotating part and the opposing part;
Method for removing processing fluid. a rotating part having a first surface and rotatable about a rotation axis in a normal direction of the first surface;
an opposing portion having a second surface opposing the first surface;
a processing liquid supply unit for supplying a processing liquid to at least a gap region between the first surface and the second surface;
a moving unit for moving at least one of the rotating unit and the opposing unit toward or away from the other of the rotating unit and the opposing unit;
a control unit that controls the rotational drive of the rotating unit and controls the rotating unit or the opposing unit of the moving unit to approach or move away from each other,
the control unit causes the moving unit to separate the first surface and the second surface while the processing liquid is being supplied to the gap region by the processing liquid supply unit, and when removing the processing liquid adhering to the second surface, causes the moving unit to rotate the rotating unit in a state in which the first surface and the second surface are brought close to each other.
Processing liquid removal device. a rotating part having a first surface and rotatable about a rotation axis in a normal direction of the first surface;
a nozzle that is movable on a plane along the first surface, has an opposing portion having a second surface opposing the first surface, and supplies a treatment liquid to at least a gap region that is a region between the first surface and the second surface;
a control unit for controlling the rotational drive of the rotating unit and the position of the nozzle,
when removing the processing liquid adhering to the second surface, the control unit positions the nozzle on an outer edge side of a center of the rotating unit and rotates the rotating unit in a state in which the first surface and the second surface are close to each other.
Processing liquid removal device. a rotating part having a first surface and rotatable about a rotation axis in a normal direction of the first surface;
a counter portion having a second surface facing the first surface and not rotating;
a processing liquid supply unit for supplying a processing liquid to at least a gap region between the first surface and the second surface;
A control unit that controls the rotation drive of the rotating unit,
the control unit rotates the rotating unit in a state in which the first surface and the second surface are brought into close proximity to each other and the processing liquid adhering to the second surface is in contact with the first surface.
Processing liquid removal device. The processing liquid removal device according to claim 12 or 13,
The opposing portion does not rotate.
Processing liquid removal device. The processing liquid removal device according to claim 12, 13 or 15,
the control unit rotates the rotating unit in a state in which the treatment liquid adhering to the second surface is in contact with the first surface.
Processing liquid removal device. 17. The processing liquid removal device according to claim 12,
a gas supply unit that supplies a gas to the gap region when removing the processing liquid adhering to the second surface.
Processing liquid removal device. 18. The processing liquid removal device according to claim 12,
The rotating part is a dummy substrate which is a substrate having a predetermined shape.
Processing liquid removal device. 19. The processing liquid removal device according to claim 12,
Further comprising a heating unit that heats the second surface.
Processing liquid removal device. 20. The processing liquid removal device according to claim 12,
the processing liquid is a chemical liquid for processing the rotating part, or a cleaning liquid for cleaning at least one of the rotating part and the opposing part;
Processing liquid removal device. 1. A substrate processing apparatus that supplies a processing liquid to an upper surface of a substrate while rotating the substrate, the lower surface of which is held by a spin chuck, the upper surface of the substrate being rotated, the
a back surface shielding plate having a surface facing the end surface of the lower surface of the substrate held by the spin chuck and not rotating;
a processing liquid supply unit that supplies a processing liquid between an end surface of the lower surface of the substrate held by the spin chuck and the opposing surface of the back surface shielding plate;
Equipped with
a processing liquid supply unit supplies a processing liquid between an end surface of the lower surface of the substrate held by the spin chuck and the opposing surface of the back surface shielding plate,
With the end surface of the lower surface of the substrate and the rear surface shielding plate brought into close proximity to each other,
2. The substrate processing apparatus according to claim 1 , wherein the processing liquid is scattered outwardly of the rear surface shielding plate by rotating the spin chuck, thereby cleaning the opposing surface of the rear surface shielding plate. 1. A substrate processing apparatus that supplies a processing liquid to an upper surface of a substrate while rotating the substrate held by a spin chuck with a rotating part,
a nozzle that is movable in a plane along the upper surface of the substrate held by the spin chuck and has an opposing surface that faces the upper surface of the substrate;
Equipped with
a processing liquid is supplied from the nozzle to the upper surface of the substrate held by the spin chuck,
The nozzle is positioned on the outer edge side of the center of the rotating part, and the substrate and the nozzle are brought into close proximity to each other,
a processing liquid that is sprayed outwardly of the substrate by rotating the spin chuck, thereby cleaning the facing surface of the nozzle. 1. A substrate processing method comprising:
While rotating the substrate, the area of the lower surface of which is not the end surface, held by the spin chuck,
a supplying step of supplying a processing liquid between an edge surface of a back surface of the substrate held by the spin chuck and an opposing surface of a non-rotating back surface shielding plate opposing the edge surface of the lower surface of the substrate held by the spin chuck;
a removing step of rotating the spin chuck to scatter and remove the processing liquid supplied between the substrate held by the spin chuck and the facing surface of the back surface shielding plate while bringing the end surface of the lower surface of the substrate and the back surface shielding plate into close proximity to each other, thereby cleaning the facing surface of the back surface shielding plate;
A substrate processing method comprising: 1. A substrate processing method comprising:
a supplying step of supplying a processing liquid onto an upper surface of the substrate held by the spin chuck from a nozzle movable along a plane along the upper surface of the substrate held by the spin chuck and having an opposing surface facing the upper surface of the substrate while rotating the substrate held by a spin chuck with a rotating part;
a removal process in which, while the nozzle is positioned on the outer edge side of the center of the rotating part and the substrate and the nozzle are in close proximity to each other, the spin chuck is rotated to scatter and remove the substrate outward, and the opposing surface of the nozzle is cleaned.

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