JP6782185B2 - Substrate processing equipment and substrate processing method - Google Patents

Description

The present invention relates to a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a plasma display, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a glass substrate for a photomask, a substrate for a solar cell, and the like (hereinafter, It relates to a substrate processing technique for processing a substrate (simply referred to as a "board").

Patent Document 1 discloses a substrate processing apparatus including a spin chuck that rotates while holding a substrate. The spin chuck includes a spin base and a holding pin (“chuck pin”) erected from the periphery of the spin base. The apparatus sequentially executes a sulfuric acid-containing liquid supply step for supplying a sulfuric acid-containing liquid, a rinse liquid supply step, and an organic solvent supply step for supplying an organic solvent to a substrate rotated by a spin chuck. The device further includes a first nozzle that discharges the cleaning liquid from below to both the side surface and the lower peripheral edge portion of the spin base, and a second nozzle that discharges the cleaning liquid to the inner wall of the cylindrical guard surrounding the substrate. The discharge port of the first nozzle and the discharge port of the second nozzle are opened on the outer peripheral surface of the casing that covers the rotation mechanism that rotates the spin base from below. The device discharges the cleaning liquid from the first and second nozzles after the completion of the sulfuric acid-containing liquid supply step, before the start of the organic solvent supply step, or during or after the execution of the organic solvent supply step, and the guard inner wall. And supply the cleaning liquid to the wall surface of the spin base. As a result, the apparatus is intended to prevent the sulfuric acid-containing liquid supplied in the sulfuric acid-containing liquid supply step from being mixed with the organic solvent supplied in the organic solvent supply step.

Japanese Unexamined Patent Publication No. 2016-42518

In a single-wafer processing apparatus, not only the side surface of the spin base but also the holding pin holding the peripheral edge of the substrate may be contaminated with the processing liquid. However, in the substrate processing apparatus of Patent Document 1, the first nozzle for discharging the cleaning liquid to the side surface of the spin base is provided in the lower portion of the spin base. The cleaning liquid discharged from the first nozzle is blocked by the spin base and cannot reach the holding pin. Therefore, the chuck pin cannot be cleaned with the cleaning liquid discharged from the first nozzle.

The present invention has been made to solve these problems. In a substrate processing apparatus in which a substrate is held by a holding pin erected from a spin base and the substrate is processed while rotating the spin base, the holding pin and spin The purpose is to provide a technique capable of cleaning both the base and the base.

In order to solve the above problems, the substrate processing apparatus according to the first aspect has a spin base that has a horizontal upper surface and can rotate about a vertical rotation axis, and a spin base that is erected on the spin base and has the spin. A holding pin that holds the peripheral edge of the substrate separated from the upper surface of the base, a rotating mechanism that rotates the spin base, a guard that faces the peripheral edge of the spin base and surrounds the spin base, and a variable flow rate of the cleaning liquid. A cleaning liquid supply mechanism to be supplied, a nozzle provided at least partly inside the guard and capable of discharging the cleaning liquid supplied by the cleaning liquid supply mechanism, and a control unit for controlling the supply of the cleaning liquid by the cleaning liquid supply mechanism. The control unit supplies the cleaning liquid with a first flow rate to the cleaning liquid supply mechanism so that the nozzle performs the first cleaning operation of applying the cleaning liquid to the holding pin to clean the holding pin. A second flow rate smaller than the first flow rate to the cleaning liquid supply mechanism so that the nozzle performs the first control of causing the nozzle to perform the first control and the second cleaning operation of applying the cleaning liquid to the side surface of the spin base to clean the spin base. The second control for supplying the cleaning liquid is performed.

The substrate processing apparatus according to the second aspect is the substrate processing apparatus according to the first aspect, and the nozzle is attached to the guard.

The substrate processing apparatus according to the third aspect is the substrate processing apparatus according to the first or second aspect, and further includes a first processing liquid supply unit for supplying the first processing liquid on the upper surface of the substrate. The control unit controls the cleaning liquid supply mechanism so as to perform the first cleaning operation or the second cleaning operation in parallel with the supply of the first processing liquid.

The substrate processing apparatus according to the fourth aspect is the substrate processing apparatus according to the third aspect, and supplies a second processing liquid which is a removing liquid for removing a film formed on the upper surface of the substrate by etching or peeling. The purpose of the first treatment liquid is to remove the reaction product or residue existing on the upper surface of the substrate from the upper surface of the substrate after supplying the second treatment liquid. Is a processing liquid supplied to the upper surface of the substrate.

The substrate processing apparatus according to the fifth aspect is the substrate processing apparatus according to the fourth aspect, the control unit can control the rotation of the spin base by the rotation mechanism, and the control unit is the control unit. When the first treatment liquid is supplied to the upper surface of the substrate by the first treatment liquid supply unit, the spin base is rotated at the first rotation speed, and the second treatment liquid is supplied by the second treatment liquid supply unit. When supplied to the upper surface of the substrate, the spin base rotates the substrate at a second rotation speed lower than the first rotation speed.

The substrate processing apparatus according to the sixth aspect is the substrate processing apparatus according to any one of the third to fifth aspects, and it is safe to mix the first treatment liquid and the cleaning liquid, and , A combination of liquids that do not produce reaction products.

The substrate processing apparatus according to the seventh aspect is the substrate processing apparatus according to any one of the second to sixth aspects, further including a base surface that supports the rotation mechanism from below, and the nozzle is the first. 1 The height of the guard from the base surface when performing the cleaning operation is substantially equal to the height of the guard from the base surface when the nozzle performs the second cleaning operation.

The substrate processing apparatus according to the eighth aspect is the substrate processing apparatus according to any one of the first to seventh aspects, and is mainly opposed to the upper surface of the substrate held by the holding pin with a gap. A plate-shaped blocking plate including a surface is further provided, and the upper portion of the guard extends toward the rotation axis, and when the first cleaning operation is performed, the inner peripheral edge of the upper portion of the guard is the blocking plate. Facing the side surface of.

The substrate processing apparatus according to the ninth aspect is the substrate processing apparatus according to any one of the first to eighth aspects, and the first flow rate is such that the cleaning liquid discharged from the nozzle rotates in a plan view. The flow rate is set so that it can be directly applied to the holding pin located on the opposite side of the nozzle across the shaft.

The substrate processing apparatus according to the tenth aspect is the substrate processing apparatus according to the ninth aspect, and the processing liquid is supplied to the upper surface of the spin base toward the lower surface of the substrate held by the holding pin. A lower surface nozzle is provided, and the cleaning liquid discharged from the nozzle in the first cleaning operation flies in a trajectory that does not interfere with the lower surface nozzle, and is located on the opposite side of the nozzle across the rotation axis in a plan view. It hits the holding pin directly.

The substrate processing method according to the eleventh aspect is a substrate processing method using a substrate processing apparatus, wherein the substrate processing apparatus includes a spin base that has a horizontal upper surface and is rotatable about a vertical rotation axis, and the spin. A holding pin that is erected on the base and holds the peripheral edge of the substrate separated from the upper surface of the spin base, a rotation mechanism that rotates the spin base, and surrounds the spin base facing the peripheral edge of the spin base. The substrate processing method includes a guard and a nozzle provided at least partially inside the guard and capable of discharging a predetermined cleaning liquid, and the substrate processing method applies the cleaning liquid to the holding pin to clean the holding pin. The first step of supplying the cleaning liquid of the first flow rate to the nozzle and the second cleaning operation of applying the cleaning liquid to the side surface of the spin base to clean the spin base so that the nozzle performs one cleaning operation. As the nozzle performs, the nozzle is provided with a second step of supplying the cleaning liquid with a second flow rate smaller than the first flow rate.

According to the invention according to the first aspect, the control unit causes the cleaning liquid supply mechanism to supply the cleaning liquid of the first flow rate so that the nozzle performs the first cleaning operation of applying the cleaning liquid to the holding pin to clean the holding pin. The cleaning liquid supply mechanism is made to supply a cleaning liquid having a second flow rate smaller than the first flow rate so that the nozzle performs the first control and the second cleaning operation in which the cleaning liquid is applied to the side surface of the spin base to clean the spin base. 2 Control and perform. Therefore, the nozzle supplies the cleaning liquid at a high speed in the first operation of cleaning the holding pin, and supplies the cleaning liquid at a low speed in the second operation of cleaning the spin base. Therefore, the cleaning liquid supplied in the first operation proceeds along a linear path without being affected by gravity so much, and the cleaning liquid supplied in the second operation is strongly affected by gravity and has an arc shape. Proceed while turning downward along the route. As a result, both the holding pin and the spin base located below the holding pin can be cleaned with a common nozzle.

According to the invention according to the second aspect, since the nozzle is attached to the guard, a separate member for attaching the nozzle is unnecessary.

According to the invention according to the third aspect, the first treatment liquid supply unit supplies the first treatment liquid to the upper surface of the substrate in parallel with the first or second cleaning operation by the nozzle. Therefore, the processing time of the substrate can be shortened.

According to the invention according to the fourth aspect, it further has a second treatment liquid supply unit for supplying the second treatment liquid (a liquid for removing the film formed on the upper surface of the substrate by etching or peeling). The chuck pin and spin base may be contaminated by the supply of the second treatment liquid, but the chuck pin and the spin base are contaminated by the supply of the second treatment liquid by performing the first or second cleaning after the supply of the second treatment liquid. The chuck pin and spin base can be cleaned.

According to the invention according to the fifth aspect, since the first or second cleaning is performed while rotating the spin base at a relatively high rotation speed, the chuck pin and the spin base can be cleaned with high efficiency.

According to the invention according to the sixth aspect, the chemical solution and the cleaning solution are a combination of solutions that are safe to mix and do not produce a reaction product. Therefore, since the chemical solution and the cleaning solution can be discharged through the same discharge route, the configuration of the discharge route can be simplified and the discharged liquid can be easily handled.

According to the invention according to the seventh aspect, the nozzle is attached to the guard, and the height of the guard when the nozzle performs the first cleaning operation and the height of the guard when the nozzle performs the second cleaning operation. Are approximately equal. Therefore, the heights of the nozzles in the first cleaning operation and the second cleaning operation can be easily made substantially equal.

According to the invention according to the eighth aspect, when the first cleaning operation is performed, the inner peripheral edge of the upper part of the guard faces the side surface of the blocking plate, so that the cleaning liquid repelled by the holding pin diffuses out of the guard. Can be suppressed.

According to the invention according to the ninth aspect, the first flow rate when performing the first cleaning directly applies the cleaning liquid discharged from the nozzle to the holding pin located on the opposite side of the nozzle across the rotation axis in a plan view. The flow rate is set so that it can be used. Therefore, it is possible to clean the side surface of the holding pin that does not face the rotation axis.

According to the invention according to the tenth aspect, it is possible to prevent the cleaning liquid discharged from the nozzle from interfering with the lower surface nozzle.

It is a schematic side view which shows the structural example of the substrate processing apparatus which concerns on embodiment. It is a flowchart which shows an example of the operation of the substrate processing apparatus of FIG. It is a flowchart which shows an example of the operation of the intermediate (final) rinsing process of FIG. It is a flowchart which shows an example of the operation in SC1 processing of FIG. It is a schematic side view for demonstrating the static elimination process of FIG. It is a schematic side view for demonstrating the SPM processing of FIG. It is a schematic side view for demonstrating the intermediate rinsing process and SC1 process of FIG. It is a schematic side view for demonstrating the organic solvent substitution process of FIG. It is a schematic side view for demonstrating the spin dry of FIG. It is a conceptual side view of the spin base at the time of step S130 of FIG. It is a conceptual top view of the spin base 21 of FIG.

Hereinafter, embodiments will be described with reference to the drawings. The following embodiments are examples that embody the present invention, and are not examples that limit the technical scope of the present invention. Further, in each figure referred to below, the dimensions and numbers of each part may be exaggerated or simplified for easy understanding. The vertical direction is the vertical direction, and the substrate side is above the spin base.

<1. Configuration of substrate processing device 1>
FIG. 1 is a schematic side view showing a configuration example of the substrate processing apparatus 1 according to the embodiment. The substrate processing device 1 is a single-wafer type device that processes substrates W such as silicon wafers one by one. The surface shape of the substrate W is substantially circular. Further, a thin film such as a resist film is formed on the upper surface of the substrate W. FIG. 1 shows a state in which the blocking plate 90 is arranged at the shelter position. Further, the blocking plate 90 arranged at a position close to the substrate W is shown by a virtual line. The loading / unloading of the substrate W into the substrate processing device 1 is performed by a robot or the like with the blocking plate 90 arranged at the shelter position. The substrate W carried into the substrate processing apparatus 1 is detachably held by the spin chuck 2.

The substrate processing device 1 includes a box-shaped chamber 11 provided with a base surface 1a, a spin chuck 2, a scattering prevention unit 3, a removal liquid supply unit 4, a chemical solution supply unit 5, a cleaning solution supply unit 6, a rinse solution supply unit 7, and an organic material. It includes a solvent supply unit 8, a surface protection unit 9, and a control unit 130. Each of these units 2 to 9 is electrically connected to the control unit 130 and operates in response to an instruction from the control unit 130. As the control unit 130, for example, the same one as a general computer can be adopted. That is, the control unit 130 is, for example, a CPU (not shown) that performs various arithmetic processes, a ROM (not shown) that is a read-only memory that stores a basic program, and a RAM (not shown) that is a read / write memory that stores various information. It is equipped with a control program PG1 (not shown), a magnetic disk for storing data and the like (not shown), and the like. In the control unit 130, each unit of the board processing device 1 is controlled by the CPU as the main control unit performing arithmetic processing according to the procedure described in the program PG1.

The chamber 11 houses the spin chuck 2, the nozzle, and the like. An FFU (fan filter unit) 12 as a blower unit for sending clean air (air filtered by a filter) into the chamber 11 is provided in the upper part of the chamber 11. The FFU 12 generates a downward airflow (“downdraft”) of clean air in the chamber 11 during the processing of the substrate W.

An exhaust port 13 is open at the bottom of the chamber 11. An exhaust duct 14 is connected to the exhaust port 13. The exhaust duct 14 is connected to an exhaust device (not shown) of a factory or the like where the substrate processing device 1 is installed. The atmosphere in the chamber 11 is exhausted from the exhaust port 13 to the exhaust device via the exhaust duct 14.

<Spin chuck 2>
The spin chuck 2 is a substrate holding portion that holds the substrate W in a substantially horizontal posture with one main surface facing upward, and vertically rotates the substrate W through the center c1 of the main surface. Rotate around the axis a1 in the circumferential direction.

The spin chuck 2 includes a spin base (“holding member”) 21 which is a disk-shaped member slightly larger than the substrate W. The spin base 21 includes a horizontal upper surface, a lower surface, and a side surface connecting the peripheral edges of the upper surface and the lower surface. The spin base 21 is formed so that a cylindrical through hole 21a that opens in the center of the upper surface and the lower surface of the spin base 21 is formed so that its central axis coincides with the rotation axis a1. A cylindrical rotating shaft portion 22 is connected to the opening on the lower side of the through hole 21a. As a result, the through hole 21a and the hollow portion of the rotating shaft portion 22 communicate with each other. The rotating shaft portion 22 is arranged in a posture such that its axis is along the vertical direction. Further, a rotation drive unit (for example, a motor) 23 is connected to the rotation shaft unit 22. The rotation drive unit 23 rotationally drives the rotation shaft unit 22 around its axis. The axis of the rotating shaft portion 22 coincides with the rotating shaft a1. Therefore, the spin base 21 can rotate about the rotation shaft a1 together with the rotation shaft portion 22. The rotary shaft portion 22 and the rotary drive portion 23 are housed in a tubular casing 24. The casing 24 is made of, for example, a resin such as PVC (vinyl chloride). The removal liquid supply unit 4, which will be described later, supplies the high-temperature SPM to the substrate W. When this SPM adheres to the casing 24, the casing 24 deteriorates and turns white, for example.

The spin chuck 2 includes a supply pipe 27 arranged so as to penetrate the hollow portion of the rotating shaft portion 22. The tip (upper end) of the supply pipe 27 is connected to the lower opening of the through hole 21a so that the supply pipe 27 and the through hole 21a of the spin base 21 communicate with each other. The lower surface nozzle 50 is connected to the opening on the upper side (board W side) of the through hole 21a. The lower surface nozzle 50 is provided with a discharge port facing the lower surface of the substrate W which is held by the spin base 21 and is rotating.

One end of the pipe 27a is connected to the lower end of the supply pipe 27. The other end of the pipe 27a, CO ₂ water supplying CO ₂ water supply source 28 is connected to the intermediate path of the piping 27a is on-off valve 29 is provided which is opened or closed by a control unit 130.

Therefore, when the on-off valve 29 is opened, the lower surface nozzle 50 is supplied with CO ₂ water through the supply pipe 27 from the CO ₂ water source 28. CO ₂ water is used for static elimination of the substrate W. The bottom surface nozzle 50 discharges CO ₂ water upward from the discharge port to the bottom surface of the substrate.

A plurality (for example, 6) chuck pins 25 are provided near the peripheral edge of the upper surface of the spin base 21 at appropriate intervals. The chuck pin 25 abuts on the end surface of the substrate W to position the substrate W in the horizontal direction, and at a position slightly higher than the upper surface of the spin base 21 (that is, at a predetermined distance from the upper surface of the spin base 21). The substrate W is held in a substantially horizontal position so as to be removable. That is, the chuck pin 25 holds the peripheral edge portion of the substrate W separated from the upper surface of the spin base 21. As a result, the spin base 21 holds the substrate W substantially horizontally from below via the chuck pin 25. The upper surface of the spin base 21 faces, for example, substantially parallel to the lower surface of the substrate W with a gap.

In this configuration, when the rotation drive unit 23 rotates the rotation shaft portion 22 with the spin base 21 holding the substrate W by the chuck pin 25 above the spin base 21, the spin base 21 is centered on the axis along the vertical direction. Rotated, thereby rotating the substrate W held above the spin base 21 about a vertical axis of rotation a1 passing through a center c1 in its plane. The rotation drive unit 23 and the rotation shaft unit 22 are rotation mechanisms 231 that rotate the spin base 21 around the rotation shaft a1.

<Scattering prevention unit 3>
The scattering prevention unit 3 receives the processing liquid and the like scattered from the substrate W rotated together with the spin base 21. In the present specification, the treatment liquid is a general term for various liquids (rinse liquid, removal liquid, chemical liquid, organic solvent, etc.) used in the substrate processing apparatus 1.

The shatterproof unit 3 includes a splash guard 31. The splash guard 31 is a tubular member having an open upper end, and is provided so as to surround the spin chuck 2. In this embodiment, the splash guard 31 is, for example, a bottom member 311, an inner member (also referred to as an "inner guard" or simply "guard") 312, and an outer member (also referred to as an "outer guard") 313. It is composed of three members. The outer member 313 may not be provided, or conversely, a guard may be further provided on the outside of the outer member 313 so as to surround the spin chuck 2.

The bottom member 311 is a tubular member having an open upper end, and has an annular bottom portion, a cylindrical inner side wall portion extending upward from the inner edge portion of the bottom portion, and a cylinder extending upward from the outer edge portion of the bottom portion. It is provided with a shaped outer wall portion. At least the vicinity of the tip of the inner side wall portion is accommodated in the inner space of the flange-shaped member 241 provided in the casing 24 of the spin chuck 2.

A pipe 32 communicating with the space between the inner side wall portion and the outer wall portion is connected to the bottom portion of the bottom member 311. The pipe 32 is branched into pipes 33 and 34. The tips of the pipes 33 and 34 are connected to separate tanks (not shown). On-off valves 35 and 36 are provided on the pipes 33 and 34. When the control unit 130 selectively opens either one of the on-off valves 35 and 36, the liquid collected at the bottom of the bottom member 311 is selectively guided to the pipe 33 and the pipe 34 after passing through the pipe 32. Then, it is collected in each tank to which each pipe is connected.

The inner member 312 is a tubular member having an open upper end, and the upper portion (“upper end side portion”, “upper end portion”) of the inner member 312 extends inward and upward. That is, the upper portion extends diagonally upward toward the rotation axis a1. In other words, the upper portion of the inner member 312 extends toward the rotation axis a1. A tubular inner peripheral wall portion extending downward along the upper inner peripheral surface and a tubular outer peripheral wall portion extending downward along the upper outer peripheral surface are formed in the lower portion of the inner member 312. A gap is formed between the inner member 312 and the outer member 313. A nozzle 64 of the cleaning liquid supply unit 6, which will be described later, is attached to a connecting portion of the inner member 312 that connects the upper portion and the inner peripheral wall portion (outer peripheral wall portion). At least the upper end side portion of the outer wall portion of the bottom member 311 is accommodated between the inner peripheral wall portion and the outer peripheral wall portion of the inner member 312. The length of the housed portion increases as the inner member 312 approaches the bottom member 311. The treatment liquid or the like received by the upper portion of the inner member 312 is discharged to the outside of the shatterproof portion 3 via the bottom member 311.

The outer member 313 is a tubular member with an open upper end, and is provided on the outside of the inner member 312. The upper portion (“upper end side portion”, “upper end portion”) of the outer member 313 extends inward and upward. That is, the upper portion extends diagonally upward toward the rotation axis a1. In other words, the upper portion of the outer member 313 extends toward the rotation axis a1. The lower portion extends downward along the outer peripheral wall portion of the inner member 312. The processing liquid or the like received by the upper portion of the outer member 313 is discharged from the gap between the outer peripheral wall portion of the inner member 312 and the lower portion of the outer member 313. The discharged treatment liquid or the like is received by an annular liquid receiving member (not shown) provided below the outer member 313 so as to surround the spin chuck 2, and a drainage groove communicating with the bottom of the liquid receiving member is formed. After that, it is discharged to the outside of the substrate processing device 1.

A guard drive mechanism (“elevating drive unit”) 37 that moves the splash guard 31 up and down is connected to the splash guard 31. The guard drive mechanism 37 is configured to include, for example, a stepping motor. In this embodiment, the guard drive mechanism 37 independently raises and lowers the inner member 312 and the outer member 313 among the three members 311, 312, 313 included in the splash guard 31.

The guard drive mechanism 37 is located between the upper position P1 (see FIG. 6) and the lower position P3 (see FIG. 5 and the like) in which the upper ends of the guards (inner member 312 and outer member 313) are located below the substrate W. , Each member 312, 313 is moved up and down. The upper position P1 of each member 312 and 313 is a position set above the intermediate position P2 (see FIG. 7 and the like). More specifically, the upper position P1 is below the lower end surface of the arm 49 when the nozzle 44 of the removal liquid supply unit 4 is arranged at the processing position, and the upper surface of the blocking plate 90 arranged at a close position. It is located above.

On the other hand, the lower position P3 of each member 312, 313 is a position where the upper end edge portion of the member 312, 313 is arranged below the upper surface of the spin base 21. The upper position P1 (lower position P3) of the outer member 313 is located slightly above the upper position P1 (lower position P3) of the inner member 312.

The intermediate position P2 of each member 312, 313 is a height position between the above-mentioned upper position P1 and lower position P3, and the inner peripheral edge of the upper portion of each member 312, 313 is a blocking plate arranged at a close position. It is a position facing the side surface of 90. When the inner member 312 is arranged at the intermediate position P2, the nozzle 64 faces the rotation locus of the chuck pin 25 in a horizontal plane. The inner member 312 arranged at the upper position P1 or the intermediate position P2 surrounds the spin base 21 so as to face the peripheral edge (side surface) of the spin base 21. The intermediate position P2 of the outer member 313 is located slightly above the intermediate position P2 of the inner member 312.

The guard drive mechanism 37 can hold each member 312, 313 at an arbitrary position between the upper position P1 and the lower position P3. Specifically, the guard drive mechanism 37 holds the members 312 and 313 at the upper position P1, the lower position P3, and the intermediate position P2 set between the upper position P1 and the lower position P3. The inner member 312 and the outer member 313 are moved up and down at the same time or sequentially so as not to collide with each other.

The guard drive mechanism 37 is electrically connected to the control unit 130 and operates under the control of the control unit 130. That is, the position of the splash guard 31 (specifically, the height position of each of the inner member 312 and the outer member 313. That is, the vertical distance from the base surface 1a of each of the inner member 312 and the outer member 313.) Is controlled by the control unit 130.

<Removal liquid supply unit 4>
The removal liquid supply unit (“second treatment liquid supply unit”) 4 supplies a removal liquid (“second treatment liquid”) for removing the film formed on the upper surface of the substrate W by etching or peeling to the upper surface of the substrate W. It is a means. Here, the removal liquid supply unit 4 supplies SPM (sulfuric acid / hydrogen peroxide mixture), that is, a hydrogen peroxide solution mixture as a removal liquid to the upper surface of the substrate W in order to peel off the resist film on the upper surface of the substrate W. To do. The removal liquid supply unit 4 may supply another removal liquid (for example, a treatment liquid containing hydrochloric acid, hydrofluoric acid, etc.) to the upper surface of the substrate W. The removal liquid supply unit 4 connects the removal liquid supply source 41, the nozzle (“removal liquid nozzle”) 44, the arm 49 to which the nozzle 44 is attached to the tip portion, and the removal liquid supply source 41 and the nozzle 44. It includes a pipe 42, an on-off valve 43 provided in the pipe 42, and a nozzle moving mechanism 47. The nozzle moving mechanism 47 is connected to the arm 49 and rotates the arm 49 in both directions around a predetermined vertical axis. As a result, the nozzle moving mechanism 47 moves (scans) the nozzle 44 along an arc-shaped path parallel to the substrate W, passing above the central portion of the substrate W while the nozzle 44 is ejecting SPM. Let me. The nozzle moving mechanism 47 includes a servomotor and the like.

The nozzle 44 is, for example, a straight nozzle that discharges a liquid in a continuous flow state. In this embodiment, a discharge port 44a is formed on the outer peripheral surface of the body of the nozzle 44, and SPM is discharged sideways from the discharge port 44a. However, instead of this configuration, a discharge port is formed at the lower end of the body of the nozzle 44, and a configuration in which SPM is discharged downward from the discharge port may be adopted.

The removal liquid supply source 41 supplies SPM via the pipe 42. In this embodiment, the SPM supplied to the pipe 42 is at a high temperature (for example, about 140 ° C. to about 160 ° C.). The SPM raised to a high temperature is supplied to the pipe 42 by the heat of reaction between sulfuric acid and the hydrogen peroxide solution.

When the on-off valve 43 is opened, the high-temperature SPM supplied from the pipe 42 to the nozzle 44 is discharged from the discharge port 44a of the nozzle 44. When the on-off valve 43 is closed, the discharge of high-temperature SPM from the nozzle 44 is stopped. The nozzle moving mechanism 47 has a processing position in which the high-temperature SPM discharged from the nozzle 44 is supplied near the center of the upper surface of the substrate W according to the control by the control unit 130, and the nozzle 44 is lateral to the spin chuck 2 in a plan view. The nozzle 44 is moved to and from the retracted position retracted to. In this way, the position of the nozzle 44 and the supply of SPM by the nozzle 44 are controlled by the control unit 130.

<Chemical solution supply unit 5>
The chemical solution supply unit (“first treatment liquid supply unit”) 5 uses a chemical solution (also referred to as “cleaning chemical solution” or “first treatment solution”) for removing foreign substances such as particles or metals on the upper surface of the substrate W. Supply to. In the embodiment, the chemical solution supply unit 5 supplies SC1 (ammonia hydrogen peroxide mixture), that is, a mixture of ammonia hydrogen peroxide solution, as a chemical solution to the upper surface of the substrate W.

The chemical solution supply unit 5 includes an SC1 supply source 51, a nozzle (“SC1 nozzle”) 54, an arm 59 to which the nozzle 54 is attached to the tip, a pipe 52 connecting the SC1 supply source 51 and the nozzle 54, and the like. An on-off valve 53 provided in the pipe 52 and a nozzle moving mechanism 57 are provided. The nozzle moving mechanism 57 is connected to the arm 59 and rotates the arm 59 in both directions around a predetermined vertical axis. As a result, the nozzle moving mechanism 57 moves (scans) the nozzle 54 along an arc-shaped path parallel to the substrate W, passing above the central portion of the substrate W while the nozzle 54 is discharging the SC1. ). The nozzle moving mechanism 57 includes a servomotor and the like.

The nozzle 54 is, for example, a straight nozzle that discharges a liquid in a continuous flow state. In this embodiment, a discharge port 54a is formed at the lower end of the body of the nozzle 54, and SC1 is discharged downward from the discharge port 54a.

The SC1 supply source 51 supplies SC1 via the pipe 52. When the on-off valve 53 is opened, the SC1 supplied from the pipe 52 to the nozzle 54 is discharged from the discharge port 54a. When the on-off valve 53 is closed, the discharge of SC1 from the nozzle 54 is stopped. The nozzle moving mechanism 57 retracts the SC1 discharged from the nozzle 54 to the side of the spin chuck 2 in plan view and the processing position where the SC1 discharged from the nozzle 54 is supplied near the center of the upper surface of the substrate W according to the control by the control unit 130. The nozzle 54 is moved to and from the retracted position. In this way, the position of the nozzle 54 and the supply of the SC1 by the nozzle 54 are controlled by the control unit 130. The chemical solution supply unit 5 may supply a mixed solution of hydrochloric acid / hydrogen peroxide solution (SC2), dilute hydrofluoric acid (DHF) or the like as a chemical solution instead of SC1.

<Cleaning liquid supply unit 6>
The cleaning liquid supply unit 6 supplies the cleaning liquid so as to hit the chuck pin 25 or the spin base 21, that is, to hit the spin chuck 2. The cleaning liquid that hits the spin base 21 flows downward and is also supplied to the side surface of the casing 24, more specifically, the side surface of the flange-shaped member 241.

The cleaning liquid supply unit 6 includes a cleaning liquid supply mechanism 66 that supplies the cleaning liquid, and a nozzle (“cleaning liquid nozzle”) 64 that is supplied with the cleaning liquid from the cleaning liquid supply mechanism 66 and can discharge the cleaning liquid. The cleaning liquid supply mechanism 66 includes a pipe 62 having one end connected to the nozzle 64, a cleaning liquid supply source 61 having the other end of the pipe 62 connected to supply the cleaning liquid to the pipe 62, and a flow control valve (““ A flow rate controller ”) 63 is provided. A discharge port 64a for discharging the cleaning liquid is formed at the tip of the nozzle 64.

The cleaning liquid supply source 61 supplies, for example, pure water, ozone water, reduced water (hydrogen water), CO ₂ water, or the like as the cleaning liquid to the pipe 62. The flow rate control valve 63 is configured so that its opening degree can be changed according to the control of the control unit 130. The control unit 130 changes the amount of the cleaning liquid discharged by the nozzle 64 by changing the opening degree of the flow rate control valve 63 to change the flow rate of the cleaning liquid flowing through the pipe 62. The flow rate control valve 63 can also stop the discharge of the cleaning liquid from the nozzle 64 by setting the opening degree to zero. That is, the cleaning liquid supply mechanism 66 can change the flow rate of the cleaning liquid to be supplied, and the control unit 130 controls the supply of the cleaning liquid by the cleaning liquid supply mechanism 66.

The nozzle 64 is, for example, a straight nozzle that discharges a liquid in a continuous flow state. The nozzle 64 is attached to the inner member 312. More specifically, the nozzle 64 is attached to the connecting portion of the inner member 312 through the connecting portion connecting the upper portion and the inner peripheral wall portion (outer peripheral wall portion). The discharge port 64a of the nozzle 64 is directed to the outer peripheral surface of the spin chuck 2, that is, the discharge direction of the discharge port 64a in the horizontal plane is preferably set so as to face the rotation axis a1. Further, the discharge angle of the discharge port 64a in the vertical direction is set to an angle such that the discharge liquid takes a substantially horizontal locus when a high flow rate liquid is discharged from the discharge port 64a. The height position of the nozzle 64 fluctuates with the vertical movement of the inner member 312 as described later, but the discharge direction of the discharge port 64a in the horizontal plane is constant.

A nozzle 64 fixed independently of the inner member 312 may be provided in the inner space surrounded by the inner member 312.

<Rinse liquid supply unit 7>
The rinse liquid supply unit 7 supplies the rinse liquid to the upper surface of the substrate W in order to perform the rinse treatment on the upper surface of the substrate W. As the rinsing liquid, for example, pure water, ozone water, reduced water (hydrogen water), CO ₂ water and the like are adopted. The rinse liquid supply unit 7 is connected to the rinse liquid supply source 71, the cylindrical nozzle 94 attached to the surface protection unit 9 described later, the pipe 72 connecting the rinse liquid supply source 71 and the nozzle 94, and the pipe 72. It is provided with an on-off valve 73 provided. The control unit 130 controls the opening and closing of the on-off valve 73.

The nozzle 94 is, for example, a straight nozzle that discharges a liquid in a continuous flow state. The internal space of the nozzle 94 communicates with the through hole 95 formed in the central portion of the blocking plate 90.

The rinse liquid supply source 71 supplies the rinse liquid via the pipe 72. When the on-off valve 73 is opened, the rinse liquid supplied from the pipe 72 to the nozzle 94 is discharged from the nozzle 94 through the through hole 95 so as to hit the central portion of the upper surface of the substrate W held by the spin chuck 2. When the on-off valve 73 is closed, the discharge of the rinse liquid from the nozzle 94 is stopped.

<Organic solvent supply unit 8>
The organic solvent supply unit 8 supplies the organic solvent for replacing the rinse liquid remaining on the upper surface of the substrate W held by the spin chuck 2 to the upper surface of the substrate W. In this embodiment, isopropyl alcohol (IPA) is used as the organic solvent. In addition to IPA, methanol, ethanol, HFE (hydrofluoroether), acetone and the like may be used as the organic solvent. Even if the substrate processing apparatus 1 does not include the organic solvent supply unit 8, the usefulness of the present invention is not impaired.

The organic solvent supply unit 8 is provided in the organic solvent supply source 81, the cylindrical nozzle 94 attached to the surface protection unit 9, the pipe 82 connecting the organic solvent supply source 81 and the nozzle 94, and the pipe 82. It is provided with an on-off valve 83. That is, in this embodiment, the organic solvent supply unit 8 and the rinse liquid supply unit 7 share the nozzle 94. The organic solvent supply unit 8 may include a nozzle different from the nozzle 94. The control unit 130 controls the opening and closing of the on-off valve 83.

The organic solvent supply source 81 supplies the organic solvent via the pipe 82. When the on-off valve 83 is opened, the organic solvent supplied from the pipe 82 to the nozzle 94 is discharged from the nozzle 94. When the on-off valve 83 is closed, the discharge of the organic solvent from the nozzle 94 is stopped.

<Surface protection part 9>
The surface protection unit 9 protects the upper surface of the substrate W from splashing of cleaning liquid or the like supplied to the chuck pin 25. When the cleaning liquid supply unit 6 supplies the cleaning liquid to the chuck pins 25 and cleans them, the surface protection unit 9 covers the upper surface with a slight gap from the upper surface of the substrate W held on the spin base 21. This protects the upper surface of the substrate W.

The surface protection portion 9 includes a cylindrical nozzle 94. As described above, the rinse liquid supply source 71 (organic solvent supply source 81) of the rinse liquid supply unit 7 (organic solvent supply unit 8) supplies the rinse liquid (organic solvent) to the nozzle 94. The nozzle 94 discharges the rinse liquid (organic solvent) toward the center of the upper surface of the substrate W held above the spin base 21. The central axis of the nozzle 94 coincides with the rotation axis a1. The surface protection portion 9 further includes a cylindrical rotating portion 93 and a disk-shaped blocking plate 90. The rotating portion 93 is attached to the lower end portion via a bearing with the lower end portion of the nozzle 94 inserted. The central axis of the rotating portion 93 coincides with the rotating axis a1. As a result, the rotating portion 93 can rotate around the nozzle 94 in the circumferential direction about the rotation axis a1.

A disk-shaped blocking plate (“opposing member”) 90 is attached to the lower portion of the rotating portion 93 so as to be rotatable integrally with the rotating portion 93. The blocking plate 90 has a disk-like shape equal to or slightly larger than the substrate W, and the rotation axis a1 passes through the center thereof. As a result, the blocking plate 90 can rotate in the circumferential direction about the rotation axis a1. The blocking plate 90 includes a lower surface (“main surface”) 91 facing the entire upper surface of the substrate W, and a side surface 92 erected above the peripheral edge of the lower surface 91. The lower surface 91 is circular. A through hole 95 communicating with the nozzle 94 is provided in the central portion of the blocking plate 90. The lower surface 91 faces the upper surface of the substrate W held by the chuck pin 25 with a gap. The width of the gap varies depending on the height of the surface protection portion 9.

A blocking plate rotating mechanism 97 is coupled to the rotating portion 93. The cutoff plate rotation mechanism 97 includes an electric motor, gears, and the like whose operation is controlled by the control unit 130, and rotates the rotation unit 93 in the circumferential direction around the rotation shaft a1. As a result, the blocking plate 90 rotates integrally with the rotating portion 93. More specifically, the blocking plate rotating mechanism 97 rotates the blocking plate 90 and the rotating portion 93 in the same direction at the same rotation speed as the substrate W under the control of the control unit 130.

A blocking plate elevating mechanism 98 including an electric motor whose operation is controlled by the control unit 130, a ball screw, and the like is coupled to the upper end portion of the nozzle 94 via a holding member (not shown) that holds the nozzle 94. ing. The blocking plate elevating mechanism 98 moves the nozzle 94 up and down in the vertical direction together with the blocking plate 90 and the rotating portion 93. The blocking plate elevating mechanism 98 has a proximity position (see FIG. 7) in which the lower surface 91 of the blocking plate 90 is close to the upper surface of the substrate W held by the spin chuck 2 and a retracted position (see FIG. 7) provided above the proximity position. 1. The blocking plate 90, the rotating portion 93, and the nozzle 94 are moved up and down between (see FIG. 5, FIG. 6, etc.). The blocking plate elevating mechanism 98 can hold the blocking plate 90 at each position between the proximity position and the retracted position. Specifically, the retracted position of the blocking plate 90 is a height position where the height from the upper surface of the substrate W to the lower surface 91 of the blocking plate 90 is, for example, 150 mm. The proximity position is a height position where the height is, for example, 3 mm.

<2. Operation of board processing device 1>
FIG. 2 is a flowchart showing an example of the operation of the substrate processing device 1. 3 and 4 are flowcharts showing examples of operations in the intermediate (final) rinsing process and SC1 process of FIG. 2, respectively. 5, FIG. 6, FIG. 7, FIG. 8, and FIG. 9 are schematic side views for explaining the static elimination treatment, the SPM treatment, the intermediate rinsing treatment and the SC1 treatment, the organic solvent replacement treatment, and the spin dry of FIG. 2, respectively. .. In FIGS. 5 to 9, some of the components of the substrate processing apparatus 1 shown in FIG. 1 are omitted.

An example of the operation of the substrate processing apparatus 1 will be described below with reference to FIGS. 5 to 9 as appropriate, based on the flowcharts of FIGS. 2 to 4.

Here, the blocking plate 90, the nozzle 44 of the removal liquid supply unit 4, and the nozzle 54 of the chemical solution supply unit 5 are arranged in advance at their respective retracted positions. Further, the inner member 312 and the outer member 313 of the splash guard 31 are arranged at their respective lower positions P3. Then, the substrate W is carried into the substrate processing device 1 and held by the spin chuck 2. Further, the substrate W is subjected to impurity injection and activation treatment after being previously coated with a resist on the upper surface, which is a device surface, and then subjected to treatments such as exposure, development, and etching. A resist pattern remains on the fine pattern of the etched conductor on the upper surface of the substrate W, and the substrate W is in the stage of being subjected to a resist peeling treatment (resist removal treatment) next. It shall be.

<Static elimination processing>
The substrate processing device 1 first performs static elimination processing on the substrate W (step S10 in FIG. 2). The rotation mechanism 231 starts the rotation of the spin base 21 at a predetermined rotation speed. In this state, the control unit 130 opens the on-off valve 29 in order to supply the CO ₂ water for the static elimination treatment to the lower surface of the substrate W. Thus, as shown in FIG. 5, CO ₂ water supply source 28 is CO ₂ water supply is supplied to the lower surface nozzle 50 from the pipe 27a through the supply tube 27, the lower surface nozzle 50, the lower surface of the substrate W CO ₂ water is discharged so as to land on the central part. The CO ₂ water spreads from the central portion to the peripheral edge of the lower surface along the lower surface of the substrate W by the centrifugal force due to the rotation of the substrate W, and is discharged from the peripheral edge to the outside of the substrate W.

Here, the members 312 and 313 are arranged in advance at the lower position P3 so that the CO ₂ water discharged from the substrate W does not bounce off the splash guard 31 and scatter on the upper surface of the substrate W. Therefore, the CO ₂ water discharged from the substrate W is discharged to the floor surface of the chamber 11 without hitting each member 312 and 313 and rebounding to the upper surface of the substrate W, and is discharged to a recovery tank or the like through a discharge pipe (not shown). Will be recovered. When the predetermined processing time elapses, the control unit 130 closes the on-off valve 29, stops the discharge of CO ₂ water by the bottom nozzle 50, and ends the static elimination processing. The members 312 and 313 in the static elimination process may be located at the upper position P1 instead of the lower position P3.

<SPM processing>
When the static elimination treatment is completed, the substrate processing apparatus 1 supplies SPM to the upper surface of the substrate W to perform an SPM treatment (resist peeling treatment) for peeling the resist film (step S20 in FIG. 2). Prior to the supply of SPM, as shown in FIG. 6, the nozzle moving mechanism 47 moves the nozzle 44 of the removing liquid supply unit 4 from the retracted position to the processing position above the substrate W, and the guard drive mechanism 37 moves the guard drive mechanism 37. The members 312 and 313 of the splash guard 31 are moved to their respective upper positions P1. The rotation mechanism 231 rotates the spin base 21 at a low rotation speed (“second rotation speed”) of, for example, about 10 rotations / minute. Further, as described above, the pipes 33 and 34 are branched from the pipe 32 connected to the bottom member 311 of the splash guard 31, and the on-off valves 35 and 36 are provided in the pipes 33 and 34. The control unit 130 opens the on-off valve 35 among the on-off valves 35 and 36 and closes the on-off valve 36. As a result, the SPM discharged from the substrate W is received by the bottom member 311 and collected in a tank or the like connected to the pipe 33 via the pipes 32 and 33.

In this state, when the control unit 130 opens the on-off valve 43 of the removal liquid supply unit 4, high-temperature SPM is supplied from the removal liquid supply source 41 to the nozzle 44 via the pipe 42. The nozzle 44 discharges SPM from the discharge port 44a to the central portion of the upper surface of the substrate W. Then, the nozzle moving mechanism 47 moves (scans) the nozzle 44 between the upper position of the central portion of the substrate W and the upper position of the peripheral edge of the substrate W. The SPM discharged to the upper surface of the substrate W spreads from the liquid landing position to the peripheral edge of the upper surface along the upper surface by the centrifugal force due to the rotation of the substrate W, and is discharged from the peripheral edge of the substrate W to the outside of the substrate W. Since the substrate W is rotating at a low speed, most of the discharged SPM does not scatter from the substrate W but flows downward from the peripheral edge of the substrate W. As a result, the SPM drops liquid toward the bottom member 311 along the outer peripheral surface of the casing 24 (more specifically, the collar-shaped member 241) through the side surfaces of the chuck pin 25 and the spin base 21 in this order. The SPM is collected from the bottom member 311 to a tank or the like connected to the pipe 33 via the pipes 32 and 33. Further, the resist film formed on the upper surface of the substrate W is peeled (removed) by the high temperature SPM, discharged from the substrate W together with the SPM, and recovered through the pipes 32 and 33. In this way, the SPM is separated from the CO ₂ water and the drainage destination.

When high-temperature SPM is supplied to the surface of the substrate W, it reacts with the resist to generate fume. Since the fume is a gas or mist derived from SPM and resist, it easily diffuses into the chamber 11. If the fume adheres to the blocking plate 90 or the like, it causes particles that contaminate the substrate W. In the substrate processing device 1, the fume generated from the upper surface of the substrate W moves downward in the inner space of the inner member 312 due to the downward flow generated by the FFU 12 and the negative pressure generated by the exhaust equipment connected to the exhaust duct 14. After flowing toward, it circulates between the inner peripheral wall portion of the inner member 312 and the outer wall portion of the bottom member 311 and is exhausted from the exhaust port 13 to the exhaust equipment through the exhaust duct 14. An exhaust duct (not shown) may be communicated with the outer member 313, and the inner member 312 may be positioned at the lower position P3 and the outer member 313 may be positioned at the upper position (P1) during the SPM process (S20).

When the predetermined processing time elapses, the control unit 130 closes the on-off valve 43 to stop the supply of SPM from the removal liquid supply source 41 to the nozzle 44, and the guard drive mechanism 37 next to each member 312, 313. The nozzle moving mechanism 47 moves the nozzle 44 to the retracted position to end the SPM processing after moving to the intermediate position P2 for the intermediate rinsing process (S30). In this embodiment, the nozzle 44 for supplying SPM discharges SPM while moving between the upper portions of the central portion and the peripheral portion of the upper surface of the substrate W, but the nozzle 44 is not moved. SPM may be discharged to the central portion of the upper surface of the substrate W. In this case, the nozzle 44 may be attached to the surface protection portion 9, for example.

<Intermediate rinse treatment>
When the SPM treatment is completed, the substrate processing apparatus 1 supplies a rinsing liquid to the upper surface of the substrate W to perform an intermediate rinsing treatment for washing away the SPM adhering to the substrate W (step S30 in FIG. 2). In the intermediate rinsing treatment, after the SPM treatment (S20), the reaction product or residue present on the upper surface of the substrate W is also removed. Such reaction products or residues are generated, for example, by SPM treatment (S20).

FIG. 7 shows two schematic side views of the substrate processing apparatus 1, and the upper schematic side view corresponds to the intermediate rinsing process in step S30. Prior to the supply of the rinse liquid, the guard drive mechanism 37 moves each member 312, 313 of the splash guard 31 to the respective intermediate position P2. The nozzle moving mechanism 47 moves the nozzle 44 of the removing liquid supply unit 4 from the processing position above the substrate W to the retracted position (not shown). Further, the blocking plate elevating mechanism 98 lowers the surface protection portion 9 to move the blocking plate 90 from the retracted position to a position close to the substrate W. As a result, the discharge port 64a of the nozzle 64 attached to the inner member 312 rotates with respect to the rotation locus of the chuck pin 25 along the horizontal plane passing through the chuck pin 25 (more accurately, along the horizontal plane passing through the chuck pin 25). It is arranged so as to face the rotation locus of the chuck pin 25 (at a position opposite to the shaft a1). The height position of the discharge port 64a is above the upper surface of the spin base 21 and below the lower surface of the substrate W. Further, the inner peripheral edges of the upper portions of the inner member 312 and the outer member 313 each face the side surface 92 of the blocking plate 90.

The rotation mechanism 231 sets the rotation speed of the spin base 21 to a predetermined rotation speed (for example, 250 rotations / minute) faster than the rotation speed in the SPM processing, and rotates the spin base 21 at the rotation speed (FIG. 3). Step S110). Further, the control unit 130 closes the on-off valve 35 among the on-off valves 35 and 36 of the pipes 33 and 34 and opens the on-off valve 36. As a result, the rinse liquid discharged from the substrate W and the cleaning liquid supplied by the cleaning liquid supply unit 6 can be received by the bottom member 311 and collected in a tank or the like connected to the pipe 34 via the pipes 32 and 34.

In this state, the control unit 130 opens the on-off valve 73 of the rinse liquid supply unit 7, so that the rinse liquid is supplied from the rinse liquid supply source 71 to the nozzle 94 via the pipe 72. As a result, the nozzle 94 starts discharging the rinse liquid to the central portion of the upper surface (main surface) of the substrate W (step S120 in FIG. 3). The rinse liquid that has landed on the central portion of the upper surface of the substrate W spreads from the landing position to the peripheral portion of the upper surface along the upper surface by the centrifugal force due to the rotation of the substrate W. By this rinsing liquid, SPM and the like remaining on the upper surface of the substrate W are washed out to the outside of the substrate W.

Further, the control unit 130 opens the flow rate control valve 63 to open the opening degree of the pipe 62 provided in the cleaning liquid supply mechanism 66 of the cleaning liquid supply unit 6 so that a large flow rate (for example, 1700 ml / m) of the cleaning liquid flows. Set. As a result, the nozzle 64 discharges the cleaning liquid supplied from the cleaning liquid supply source 61 at a high speed (large flow rate, first flow rate) to start cleaning the chuck pin 25 (step S130 in FIG. 3). In this large flow rate, the cleaning liquid enters the space between the upper surface of the spin base 21 and the lower surface of the substrate W from the discharge port 64a, and the space is linearly aligned with the upper surface of the spin base 21 (lower surface of the substrate W). It is a flow rate that is discharged at a high discharge speed that can advance. More specifically, this high-speed discharge speed allows the cleaning liquid discharged from the discharge port 64a to follow the space between the spin base 21 and the substrate W along the upper surface of the spin base 21 while maintaining a linear shape. This is the speed at which the outer peripheral surface of the rotating chuck pin 25 can reach the surface facing the rotating shaft a1. FIG. 10 is a conceptual side view of the spin base 21 at the time of step S130. As shown in FIG. 10, the cleaning liquid L discharged from the nozzle 64 flies linearly at a speed such that it reaches the inner member 312 facing the nozzle 64 across the rotation axis a1 of the spin base 21. Note that the lower surface nozzle 50 is not shown in FIG. 10.

FIG. 11 is a conceptual top view of the spin base 21 at the time of step S130. As shown in FIG. 11, the discharge direction of the linear cleaning liquid L discharged from the nozzle 64 in a plan view is set so that the cleaning liquid can reach the rotation axis facing surface of the chuck pin 25 while avoiding the lower surface nozzle 50. There is. That is, the linear cleaning liquid L discharged from the nozzle 64 flies in a trajectory that does not interfere with the lower surface nozzle 50, and the chuck pin located on the opposite side of the nozzle 64 across the rotation axis a1 of the spin base 21 in a plan view. Reach the sides of 25 and wash it.

In this way, the linear flow of the cleaning liquid supplied to the nozzle 64 at a large flow rate and discharged from the nozzle 64 at a high speed intersects the rotation locus of the chuck pin 25 at two locations, the side near the nozzle 64 and the side far from the nozzle 64. can do. When the flow of the cleaning liquid hits the chuck pin 25 at the portion of the two locations closer to the nozzle 64, the cleaning liquid is the surface of the outer peripheral surface of the chuck pin 25 opposite to the rotation shaft a1 (rotation shaft). It hits the surface that does not face a1). When the flow of the cleaning liquid hits the chuck pin 25 on the side of the two locations farther from the nozzle, the cleaning liquid hits the rotation axis facing surface of the outer peripheral surface of the chuck pin 25 as described above.

As described above, the control unit 130 performs a cleaning operation (“first cleaning operation”, “first cleaning process”) in which the nozzle 64 applies the cleaning liquid to the chuck pin 25 to clean the chuck pin 25. Control (“first control”) for supplying a large flow rate of cleaning liquid to the supply mechanism 66 is performed.

The rinse liquid supplied from the rinse liquid supply unit 7 to the substrate W scatters from the peripheral edge of the substrate W toward the inner member 312 because the substrate W is rotated at a relatively high speed. Further, when the cleaning liquid supplied by the cleaning liquid supply unit 6 also hits the outer peripheral surface of the chuck pin 25 on the side opposite to the rotation shaft a1, the cleaning liquid violently splashes because of its high speed. However, since the blocking plate 90 is arranged at a position close to the blocking plate 90 and the inner peripheral edges of the upper portions of the inner member 312 and the outer member 313 each face the side surface 92 of the blocking plate 90, the rinsing liquid and the cleaning liquid can be discharged. , Scattering from the inner space of the inner member 312 to the outside of the splash guard 31 can be suppressed.

Next, the control unit 130 waits for the predetermined processing time required for the rinsing process to elapse (step S140 in FIG. 3), and then closes the on-off valve 73 of the rinsing solution supply unit 7 to rinse the rinsing solution from the nozzle 94. (Step S150 in FIG. 3), the flow control valve 63 of the cleaning liquid supply unit 6 is closed, and the discharge of the cleaning liquid from the nozzle 64 is stopped (step S160 in FIG. 3). As a result, the intermediate rinsing process is completed. In the process of step S160, the control unit 130 may discharge the cleaning liquid from the nozzle 64 at a small flow rate, which will be described later, instead of stopping the discharge of the cleaning liquid. Further, in this embodiment, the rinsing treatment and the first cleaning treatment are performed in parallel, but one of these treatments may be performed first, and then the other treatment may be performed. ..

<SC1 processing>
When the intermediate rinsing treatment is completed, the substrate processing apparatus 1 supplies SC1 as a chemical solution to the upper surface of the substrate W, and after the SPM treatment (S20), the reaction product or residue existing on the upper surface of the substrate W and the particles The SC1 process (“particle removal process”) for removing the particles is performed (step S40 in FIG. 2).

Of the two schematic side views shown in FIG. 7, the lower schematic side view corresponds to the SC1 process in step S40. Prior to the supply of the SC1, the cutoff plate elevating mechanism 98 moves the surface protection unit 9 so that the cutoff plate 90 is arranged at the shelter position. The nozzle moving mechanism 57 moves the nozzle 54 of the chemical solution supply unit 5 from the retracted position to the processing position above the substrate W.

The rotation mechanism 231 sets the rotation speed of the spin base 21 to a predetermined rotation speed (for example, 500 rotations / minute) that is even faster than the rotation speed in the intermediate rinsing process, and the rotation speed (“first rotation”). The spin base 21 is rotated at "speed") (step S210 in FIG. 4).

In this state, the control unit 130 opens the on-off valve 53 of the chemical solution supply unit 5, so that the SC1 is supplied from the SC1 supply source 51 to the nozzle 54 via the pipe 52. As a result, the nozzle 54 starts discharging SC1 to the central portion of the upper surface (main surface) of the substrate W (step S220 in FIG. 4). Then, the nozzle moving mechanism 57 reciprocates (scans) the nozzle 54 between the upper position in the center of the substrate W and the upper position in the peripheral edge of the substrate W. The SC1 that hits the center of the upper surface of the substrate W spreads from the liquid landing position to the peripheral edge of the upper surface along the upper surface by the centrifugal force due to the rotation of the substrate W. The SC1 removes resist residues and particles adhering to the substrate W.

Further, the control unit 130 opens the flow rate control valve 63 so that a small flow rate (for example, 400 to 500 ml / m) of the cleaning liquid flows through the pipe 62 provided in the cleaning liquid supply mechanism 66 of the cleaning liquid supply unit 6. Set the degree. As a result, the nozzle 64 discharges the cleaning liquid supplied from the cleaning liquid supply source 61 at a low speed (small flow rate) to start cleaning the spin base 21 and the casing 24 (step S230 in FIG. 4). The flow rate of the cleaning liquid at this time is smaller than the flow rate in step S130 (second flow rate).

This small flow rate allows the cleaning liquid discharged from the discharge port 64a to travel along an arcuate path that approaches the side surface of the spin base 21 while bending downward while heading toward the rotation axis a1 at a low discharge speed. The flow rate to be discharged. In other words, the control unit 130 discharges the cleaning liquid from the discharge port 64a at a low speed so that the cleaning liquid can travel from the discharge port 64a toward the rotation axis a1 along an arcuate path approaching the side surface of the spin base 21 while bending downward. The cleaning liquid supply mechanism 66 of the cleaning liquid supply unit 6 is supplied with a small flow rate of the cleaning liquid.

As described above, the control unit 130 causes the nozzle 64 to perform a cleaning operation (“second cleaning operation”, “second cleaning process”) in which the cleaning liquid is applied to the side surface of the spin base 21 to clean the spin base 21. , The cleaning liquid supply mechanism 66 is controlled to supply a small flow rate of the cleaning liquid (“second control”). Further, the chemical solution supply unit 5 supplies the chemical solution to the upper surface of the substrate W in parallel with the second cleaning operation by the nozzle 64.

The SC1 supplied from the chemical solution supply unit 5 to the substrate W scatters from the peripheral edge of the substrate W toward the inner member 312 because the substrate W is rotated at a higher speed than during the SPM processing (S20), and the peripheral edge thereof. It hardly flows down from. The SC1 scattered from the peripheral edge of the substrate W flows downward along the inner peripheral surface of the inner member 312 and flows to the bottom member 311.

Further, the cleaning liquid supplied by the cleaning liquid supply unit 6 has a low speed and hits the side surface of the spin base 21 diagonally downward. Therefore, after hitting the side surface of the spin base 21, the liquid flows downward along the side surface without much splashing from the side surface, and further flows to the bottom member 311 along the outer peripheral surface of the casing 24.

The SC1 and the cleaning liquid that have flowed into the bottom member 311 are collected from the bottom member 311 in a tank or the like connected to the pipe 34 via the pipes 32 and 34. SC1 (chemical solution) and cleaning solution are examples of a combination of solutions that are safe to mix and do not produce reaction products. Other examples of such a combination include hydrofluoric acid and water, IPM and water, and the like.

Next, the control unit 130 waits for the predetermined processing time required for the rinsing process to elapse (step S240 in FIG. 4), and then closes the on-off valve 53 of the chemical solution supply unit 5 to discharge the SC1 from the nozzle 54. (Step S250 in FIG. 4), the flow control valve 63 of the cleaning liquid supply unit 6 is closed, and the discharge of the cleaning liquid from the nozzle 64 is stopped (step S260 in FIG. 4). As a result, the SC1 process is completed. In this embodiment, the SC1 treatment and the second cleaning treatment are performed in parallel, but one of these treatments may be performed first, and then the other treatment may be performed. Further, in this embodiment, the nozzle 54 for supplying SC1 discharges SC1 while moving between the upper portions of the central portion and the peripheral portion of the upper surface of the substrate W, but the nozzle 54 is moved. SC1 may be discharged to the central portion of the upper surface of the substrate W without any problem. In this case, the nozzle 54 may be attached to the surface protection portion 9, for example.

As described above, the inner member 312 and the outer member 313 are arranged at the intermediate position P2 in both the intermediate rinsing treatment and the SC1 treatment. The height of the inner member 312 may be slightly changed between the first cleaning process and the second cleaning process. That is, the height of the inner member 312 when the nozzle 64 performs the first cleaning operation and the height of the inner member 312 when the nozzle 64 performs the second cleaning operation are preferably set to be substantially equal.

<Final rinse treatment>
When the SC1 treatment is completed, the substrate processing apparatus 1 supplies a rinsing liquid to the upper surface of the substrate W to perform a final rinsing treatment for washing away the SC1 adhering to the substrate W (step S50 in FIG. 2).

Since the final rinsing treatment is the same as the intermediate rinsing treatment described above, detailed description thereof will be omitted. In addition, in the two schematic side views of FIG. 7, the upper schematic side view corresponds not only to the intermediate rinsing process of step S30 but also to the final rinsing process of step S50. Further, the flowchart of FIG. 3 also describes the operation of the final rinsing process as well as the intermediate rinsing process.

<Organic solvent replacement treatment>
When the final rinsing treatment is completed, the substrate processing apparatus 1 supplies an organic solvent to the upper surface of the substrate W and performs a treatment (organic solvent replacement treatment) for replacing the rinsing liquid remaining on the upper surface with the organic solvent (FIG. Step S60 of 2. In this embodiment, the substrate processing apparatus 1 supplies IPA as an organic solvent from the organic solvent supply unit 8.

Prior to the supply of the IPA, the nozzle moving mechanism 57 moves the nozzle 54 of the chemical solution supply unit 5 from above the substrate W to the retracted position, and the blocking plate elevating mechanism 98 lowers the surface protection unit 9 to lower the blocking plate. Move 90 from the retracted position to the close position. The guard drive mechanism 37 moves the inner member 312 of the splash guard 31 from the intermediate position P2 to the lower position P3. The outer member 313 is not moved and is fixed at the intermediate position P2. The rotation mechanism 231 rotates the spin base 21 at a predetermined rotation speed (for example, 500 rotations / minute).

In this state, the control unit 130 opens the on-off valve 83 of the organic solvent supply unit 8, so that the IPA is supplied from the organic solvent supply source 81 to the nozzle 94 via the pipe 82. As a result, the nozzle 94 starts discharging the IPA to the central portion of the upper surface (main surface) of the substrate W. The IPA that hits the center of the upper surface of the substrate W spreads from the liquid landing position to the peripheral edge of the upper surface along the upper surface by the centrifugal force due to the rotation of the substrate W. By this IPA, the rinse liquid remaining on the upper surface of the substrate W is flowed to the outside of the substrate W and replaced with the IPA.

The IPA supplied from the organic solvent supply unit 8 to the substrate W scatters from the peripheral edge of the substrate W toward the outer member 313. The IPA that has reached the outer member 313 flows downward along the inner peripheral surface of the outer member 313, and is provided by an annular liquid receiving member (not shown) provided below the outer member 313 so as to surround the spin chuck 2. It is received and discharged to the outside of the substrate processing device 1 through a drainage groove communicating with the bottom of the liquid receiving member.

The control unit 130 waits for the predetermined processing time required for the organic solvent replacement process to elapse, and then closes the on-off valve 83 of the organic solvent supply unit 8 to stop the discharge of IPA from the nozzle 94. As a result, the organic solvent replacement treatment is completed. Even if the organic solvent replacement treatment is not performed, the usefulness of the present invention is not impaired.

<Spin dry>
When the organic solvent replacement treatment is completed, the substrate processing apparatus 1 performs a spin-drying treatment in which the IPA (organic solvent) remaining on the upper surface of the substrate W is shaken off to the outside of the substrate W by the rotation of the substrate W to dry the substrate W. (Step S70 in FIG. 2).

The height positions of the blocking plate 90 and the splash guard 31 are maintained at the positions of the organic solvent replacement treatment. That is, the blocking plate 90 is fastened to the close position, and the inner member 312 and the outer member 313 are fastened to the lower position P3 and the intermediate position P2, respectively.

The rotation mechanism 231 rotates the spin base 21 at a predetermined high rotation speed (for example, 1500 rotations / minute). As a result, the IPA remaining on the upper surface of the substrate W moves to the peripheral edge of the substrate W by the centrifugal force due to the rotation of the substrate W, scatters from the peripheral edge toward the outer member 313, and the substrate W is dried. The IPA that has reached the outer member 313 flows downward along the inner peripheral surface of the outer member 313, is received by the annular liquid receiving member provided below the outer member 313, and communicates with the bottom of the liquid receiving member. It is discharged to the outside of the substrate processing device 1 through the drainage groove.

The control unit 130 waits for the predetermined processing time required for spin drying to elapse, and causes the rotation mechanism 231 to stop the rotation of the spin base 21. As a result, the spin drying of the substrate W is completed.

According to the substrate processing apparatus according to the present embodiment configured as described above, the control unit 130 makes the nozzle 64 perform the first cleaning operation of applying the cleaning liquid to the chuck pin 25 to clean the chuck pin 25. The cleaning liquid supply mechanism 66 is provided with the cleaning liquid supply mechanism 66 so that the nozzle 64 performs the first control of supplying the cleaning liquid supply mechanism 66 with a large flow rate of the cleaning liquid and the second cleaning operation of applying the cleaning liquid to the side surface of the spin base 21 to clean the spin base 21. A second control for supplying a small flow rate of cleaning liquid is performed. Therefore, the nozzle 64 supplies the cleaning liquid at a high speed in the first operation of cleaning the chuck pin 25, and supplies the cleaning liquid at a low speed in the second operation of cleaning the spin base 21. Therefore, the cleaning liquid supplied in the first operation proceeds along a linear path without being affected by gravity so much, and the cleaning liquid supplied in the second operation is strongly affected by gravity and has an arc shape. Proceed while turning downward along the route. As a result, both the chuck pin 25 and the spin base 21 located below the chuck pin 25 can be cleaned with the common nozzle 64, and the cleaning liquid is slow when cleaning the spin base 21. , It is also possible to suppress the splashing of the cleaning liquid from the spin base 21.

Further, according to the substrate processing apparatus according to the present embodiment, since the nozzle 64 is attached to the inner member 312, a separate member for attaching the nozzle 64 is not required.

Further, according to the substrate processing apparatus according to the present embodiment, the chemical solution supply unit 5 supplies the chemical solution to the upper surface of the substrate W in parallel with the second cleaning operation by the nozzle 64. Therefore, the processing time of the substrate W can be shortened.

Further, according to the substrate processing apparatus according to the present embodiment, the chemical solution and the cleaning solution are a combination of solutions that are safe to mix and do not produce a reaction product. Therefore, since the chemical solution and the cleaning solution can be discharged through the same discharge route, the configuration of the discharge route can be simplified and the discharged liquid can be easily handled.

Further, according to the substrate processing apparatus according to the present embodiment, the removal liquid supply unit supplies SPM to the upper surface of the substrate W immediately before the first cleaning operation. Therefore, since the cleaning liquid can be supplied to the chuck pin 25 immediately after the SPM is discharged from the substrate W and the SPM adheres to the chuck pin 25, the SPM adhering to the chuck pin 25 can be efficiently removed.

Further, according to the substrate processing apparatus according to the present embodiment, the nozzle 64 is attached to the inner member 312, and the height of the inner member 312 when the nozzle 64 performs the first cleaning operation and the nozzle 64 are the second. The height of the inner member 312 when performing the cleaning operation is substantially equal to that of the inner member 312. Therefore, the heights of the nozzles 64 in the first cleaning operation and the second cleaning operation can be easily made substantially equal.

Further, according to the substrate processing apparatus according to the present embodiment, the first cleaning process (S130) is executed in parallel with the intermediate rinsing process (S30), and the second cleaning process (S230) is executed in parallel with the SC1 process (S40). ) Was executed. The rotation speeds of the spin base 21 during the intermediate rinsing treatment (S30) and the SC1 treatment (S40) are 250 rpm and 500 rpm, respectively, which are significantly higher than the rotation speeds of the spin base 21 during the SPM treatment (S20) of 10 rpm. As described above, in the present embodiment, the first and second cleaning processes (S130) and (S230) are executed while rotating the spin base 21 at a relatively high speed. As a result, the cleaning liquid can collide with the chuck pin 25 and the spin base 21 at a relatively high speed. Therefore, the first and second cleaning processes S130 and S230 can be performed with high cleaning efficiency.

Further, as described above, since the intermediate rinsing treatment (S30) and the SC1 treatment (S40) are executed while rotating the spin base 21 at a relatively high speed, most of the treatment liquid is scattered from the substrate W, and the substrate W Only zero or a small amount of treatment liquid drops downward. Since the first and second cleaning processes (S130) and (S230) can be performed in a state where there is almost no drop of the processing liquid from above, the chuck pin 25 and the spin base 21 are efficiently cleaned. It is possible to do.

Further, according to the substrate processing apparatus according to the present embodiment, when the first cleaning operation is performed, the inner peripheral edge of the upper portion of the inner member 312 faces the side surface of the blocking plate, so that the cleaning liquid bounced off by the chuck pin 25 is released. It is possible to suppress the diffusion to the outside of the inner member 312.

In this embodiment, the first cleaning treatment (S130) was executed in parallel with the intermediate rinsing treatment (S30), and the second cleaning treatment (S230) was executed in parallel with the SC1 treatment (S40). However, the first and second cleaning treatments (S130) and (S230) may be sequentially executed in parallel with the intermediate rinsing treatment (S30). After the second cleaning treatment (S230), the first cleaning treatment (S130) may be executed in parallel with the intermediate rinsing treatment (S30). Alternatively, the first and second cleaning processes (S130) and (S230) may be sequentially executed in parallel with the SC1 process (S40). After the second cleaning process (S230), the first cleaning process (S130) may be executed in parallel with the SC1 process (S40).

Further, in the present embodiment, after supplying SPM, which is one of the removal liquids (SPM treatment (S20)), the first and second cleaning treatments (S130) and (S230) were executed. However, the first and second cleaning treatments (S130) and (S230) may be executed after supplying another treatment liquid (for example, an organic solvent, a rinsing liquid, etc.) to the substrate W.

Further, in the present embodiment, the first and second cleaning treatments (S130) and (S230) are executed in parallel with the supply of the treatment liquid to the upper surface of the substrate W, but the treatment liquid is supplied to the upper surface of the substrate W. The first and second cleaning processes (S130) and (S230) may be executed in the state where the cleaning process is not performed.

Further, in the present embodiment, the first and second cleaning processes (S130) and (S230) are executed with the substrate W held by the spin base 21, but the substrate W is not held by the spin base 21. The first and second cleaning processes (S130) and (S230) may be performed.

Although the present invention has been shown and described in detail, the above description is exemplary and not limiting in all embodiments. Therefore, in the present invention, the embodiments can be appropriately modified or omitted within the scope of the invention.

1 Substrate processing device 130 Control unit 2 Spin chuck 21 Spin base 231 Rotation mechanism 24 Casing 25 Chuck pin (holding pin)
3 Scatter prevention part 31 Splash guard 312 Inner member (guard)
4 Removal liquid supply unit (second treatment liquid supply unit)
5 Chemical supply unit (first treatment liquid supply unit)
6 Cleaning liquid supply unit 64 Nozzle 66 Cleaning liquid supply unit 7 Rinse liquid supply unit 8 Organic solvent supply unit 9 Surface protection unit 90 Blocking plate P1 Upper position P2 Intermediate position P3 Lower position W Substrate a1 Rotation axis c1 Center

Claims (11)

With a spin base that has a horizontal top surface and can rotate around a vertical axis of rotation,
A holding pin that is erected on the spin base and holds the peripheral edge of the substrate with a gap from the upper surface of the spin base.
A rotation mechanism that rotates the spin base and
A guard that faces the periphery of the spin base and surrounds the spin base,
A cleaning liquid supply mechanism that supplies cleaning liquid with a variable flow rate,
A nozzle that is provided inside the guard at least in part and can discharge the cleaning liquid supplied by the cleaning liquid supply mechanism.
A control unit that controls the supply of the cleaning liquid by the cleaning liquid supply mechanism, and
With
The control unit
The first control of supplying the cleaning liquid to the cleaning liquid supply mechanism with the first flow rate and the cleaning liquid being supplied to the cleaning liquid supply mechanism so that the nozzle performs the first cleaning operation of applying the cleaning liquid to the holding pin to clean the holding pin. A second control for causing the cleaning liquid supply mechanism to supply the cleaning liquid having a second flow rate smaller than the first flow rate so that the nozzle performs the second cleaning operation of touching the side surface of the spin base to clean the spin base. , A board processing device. The substrate processing apparatus according to claim 1.
The nozzle is a substrate processing device attached to the guard. The substrate processing apparatus according to claim 1 or 2.
Further, a first treatment liquid supply unit for supplying the first treatment liquid is provided on the upper surface of the substrate.
The control unit is a substrate processing apparatus that controls the cleaning liquid supply mechanism so as to perform the first cleaning operation or the second cleaning operation in parallel with the supply of the first processing liquid. The substrate processing apparatus according to claim 3.
It also has a second treatment liquid supply unit that supplies a second treatment liquid that is a removal liquid that removes the film formed on the upper surface of the substrate by etching or peeling.
The first treatment liquid is a treatment liquid supplied to the upper surface of the substrate for the purpose of removing the reaction product or residue existing on the upper surface of the substrate from the upper surface of the substrate after supplying the second treatment liquid. There is a board processing device. The substrate processing apparatus according to claim 4.
The control unit can control the rotation of the spin base by the rotation mechanism.
When the first treatment liquid is supplied to the upper surface of the substrate by the first treatment liquid supply unit, the control unit rotates the spin base at the first rotation speed, and the second treatment liquid supply unit rotates the spin base. A substrate processing apparatus that rotates the substrate at a second rotation speed lower than the first rotation speed of the spin base when the second treatment liquid is supplied to the upper surface of the substrate. The substrate processing apparatus according to any one of claims 3 to 5.
A substrate processing apparatus, wherein the first treatment liquid and the cleaning liquid are a combination of liquids that are safe to mix and do not produce reaction products. The substrate processing apparatus according to any one of claims 2 to 6.
Further provided with a base surface that supports the rotation mechanism from below,
The height of the guard from the base surface when the nozzle performs the first cleaning operation is substantially equal to the height of the guard from the base surface when the nozzle performs the second cleaning operation. Board processing equipment. The substrate processing apparatus according to any one of claims 1 to 7.
A plate-shaped blocking plate including a main surface facing the upper surface of the substrate held by the holding pin with a gap is further provided.
The upper part of the guard extends toward the rotation axis and
A substrate processing device in which the inner peripheral edge of the upper part of the guard faces the side surface of the blocking plate when the first cleaning operation is performed. The substrate processing apparatus according to any one of claims 1 to 8.
The first flow rate is set to a flow rate at which the cleaning liquid discharged from the nozzle can be directly applied to a holding pin located on the opposite side of the nozzle across the rotation axis in a plan view. The substrate processing apparatus according to claim 9.
A lower surface nozzle for supplying a treatment liquid toward the lower surface of the substrate held by the holding pin is provided on the upper surface of the spin base, and the cleaning liquid discharged from the nozzle in the first cleaning operation is the lower surface. A substrate processing device that flies on a locus that does not interfere with a nozzle and directly hits a holding pin located on the opposite side of the nozzle across the rotation axis in a plan view. It is a substrate processing method using a substrate processing device.
The substrate processing apparatus is
With a spin base that has a horizontal top surface and can rotate around a vertical axis of rotation,
A holding pin that is erected on the spin base and holds the peripheral edge of the substrate with a gap from the upper surface of the spin base.
A rotation mechanism that rotates the spin base and
A guard that faces the periphery of the spin base and surrounds the spin base,
A nozzle provided at least partly inside the guard and capable of discharging a predetermined cleaning liquid,
With
The substrate processing method is
A first step of supplying a first flow rate of the cleaning liquid to the nozzle so that the nozzle performs the first cleaning operation of applying the cleaning liquid to the holding pin to clean the holding pin.
A second cleaning liquid that supplies the nozzle with a second flow rate smaller than the first flow rate so that the nozzle performs a second cleaning operation in which the cleaning liquid is applied to the side surface of the spin base to clean the spin base. Process and
A substrate processing method.

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