JP5139844B2 - Substrate processing method and substrate processing apparatus - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for rinsing and drying a substrate. Examples of substrates include semiconductor substrates, glass substrates for liquid crystal display devices, glass substrates for plasma displays, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomask substrates. Etc. are included.

  For example, in a semiconductor device manufacturing process, processing using a processing liquid is performed on the surface of a semiconductor wafer (hereinafter simply referred to as “wafer”). After the processing using this processing liquid, a rinsing process is performed in which the processing liquid adhering to the wafer surface is washed away with pure water. Then, after the rinsing process, a drying process for drying the surface of the wafer is performed. In the drying process, the rinsed wafer is rotated at a high speed, so that pure water adhering to the wafer is shaken off and removed (dried).

However, in such a drying method, pure water that has entered between the fine trenches and fine patterns formed on the surface of the wafer is not shaken off, and there is a possibility that pure water may remain at the bottom between the trenches and patterns. is there.
Therefore, an IPA (isopropyl alcohol) solution at room temperature (about 25 ° C.) is supplied to the surface of the wafer after being rinsed with pure water, and the pure water that has entered the trenches and patterns on the surface of the wafer is IPA. A method for drying the surface of a wafer by replacing it with a liquid has been proposed.
JP-A-9-38595

However, since IPA liquid at room temperature is difficult to mix with pure water that has entered between fine trenches and fine patterns, pure water sometimes remains at the bottom between the trenches and patterns. For example, if pure water remains at the bottom between the patterns, the pattern may collapse due to the surface tension of the pure water when the pure water evaporates.
Accordingly, an object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of satisfactorily removing the rinse liquid from the surface of the substrate.

The invention according to claim 1 for achieving the above object includes a chemical treatment process for treating the entire surface with the chemical solution by supplying the chemical solution to the surface of the substrate while rotating the substrate, and rotating the substrate. a rinsing step of washing away the chemical solution adhering to the surface in the rinsing liquid by supplying a rinse liquid to the surface, low ambient temperature of the low surface tension than the rinsing liquid while rotating the substrate on which the rinsing liquid is attached In parallel with the low surface tension liquid supply step for supplying the surface tension liquid to the surface and the low surface tension liquid supply step , hot water having a temperature higher than that of the low surface tension liquid is provided on the back surface of the substrate opposite to the surface. by supplying the on the surface of the substrate low surface tension liquid is raised temperature, replacing the rinsing liquid adhering to the surface of the substrate with the low surface tension liquid And water supplying step, the by rotating the substrate in a state of stopping the supply of the low surface tension liquid and the hot water, and hot water adhering to the back surface and the low surface tension liquid adhering to said surface The substrate processing method includes a swing-off step of removing the substrate by shaking it off .
According to this method, after the substrate is rotated , the rinsing liquid is supplied to the surface of the substrate, and after the rinsing process for the substrate surface (the process of washing away the chemical solution attached to the substrate surface with the rinsing liquid) is performed, the substrate , A low temperature surface tension liquid having a surface tension lower than that of the rinsing liquid is supplied to the surface of the substrate. In parallel with the supply of low surface tension liquids, temperature water of the hot it is supplied than the low surface tension liquid to the rear surface opposite to the surface of the substrate.

By the supply of hot water to the back surface of the substrate, the substrate can be heated, through the substrate, the low surface tension liquid at room temperature that is supplied to the surface of the substrate can be heated. As a result, the temperature of the low surface tension liquid on the surface of the substrate can be raised to room temperature or higher, and the replacement efficiency between the rinse liquid on the surface of the substrate and the low surface tension liquid can be improved. As a result, the rinse liquid can be satisfactorily removed from the surface of the substrate.

  As a technique for increasing the temperature of the low surface tension liquid, it is conceivable to heat the low surface tension liquid with a heater or the like before supplying the low surface tension liquid to the surface of the substrate. However, in order to supply the heated low surface tension liquid to the substrate, it is necessary to provide a heating mechanism in a pipe and / or a nozzle for supplying the low surface tension liquid. As a result, the configuration of the substrate processing apparatus becomes complicated, and the cost of the substrate processing apparatus increases. In addition, when the nozzle is not provided with a heating mechanism, when the low surface tension liquid with a lowered temperature is accumulated in the nozzle at the time when the supply of the low surface tension liquid to the substrate is started, the temperature is lowered. A low surface tension liquid is supplied to the substrate. Low surface tension liquid with reduced temperature is not efficient in replacing the rinsing liquid on the surface of the substrate, so removing the rinsing liquid from the surface of the substrate results in an increase in the supply of low surface tension liquid Causes an increase in cost due to the increase in processing cost and a decrease in throughput of the apparatus due to a longer processing time. On the other hand, in the method of heating the low surface tension liquid through the substrate, the heating mechanism of the low surface tension liquid supply system is unnecessary, which causes a complicated configuration of the substrate processing apparatus and an increase in cost. There is no fear.

In the present invention, since warm water is used as the temperature adjusting liquid for raising the temperature of the low surface tension liquid, it is not necessary to take measures against corrosion or the like in the supply system for supplying the warm water to the surface of the substrate. Therefore, the rinsing liquid can be satisfactorily removed from the surface of the substrate with a simpler configuration.
According to a second aspect of the present invention, in the hot water supply step, it is preferable that the temperature of the low surface tension liquid is increased to the boiling point on the surface of the substrate.
Further, as described in claim 3, the low surface tension liquid is preferably an IPA liquid.

As described in claim 4, wherein the low surface tension liquid supply step is preferably terminated after the completion of the hot water supplying step.
In a state where warm water on the back surface of the substrate is present, the low surface tension liquid is eliminated from the surface of the substrate, a possibility that temperature water on the back surface of the substrate from flowing to the peripheral portion of the surface along the peripheral edge surface of the substrate There is. Even after completion of the supply of warm water, by the supply of low surface tension liquid to the surface of the substrate is continued, the temperature water can be prevented from flowing in the peripheral portion of the surface of the substrate. As a result, it is possible to prevent a pattern collapse and drying traces of hot water occurs due to the evaporation of warm water in the peripheral portion of the surface of the substrate.

As described in claim 5, wherein the temperature water supplying step, the start and the low surface tension liquid supply step may be started simultaneously.
In this case, (the time of the warm water supply step) time temperature water on the back surface of the substrate is supplied with low surface tension liquids are supplied time (low surface tension liquid supply process time) on the surface of the substrate below can do. As a result, the time required for the entire process can be shortened.

Further, as described in claim 6, wherein the temperature water supplying step may be initiated prior to the start of the low surface tension liquid supplying step.
In this case, the substrate can be heated prior to the start of the supply of the low surface tension liquid to the surface of the substrate. Thereby, immediately after the supply of the low surface tension liquid is started, the low surface tension liquid can be heated on the surface of the substrate, and good replacement between the low surface tension liquid and the rinsing liquid can be achieved.

In the substrate processing method according to claim 7 , in the low surface tension liquid supply step, a blocking plate for blocking a space on the surface of the substrate from its surroundings is provided on the surface of the substrate. It is preferable to execute a gas supply step of supplying any one of nitrogen gas, IPA vapor, and dry air between the surface of the substrate and the blocking plate in a state of being opposed to each other at close positions .
The gas is supplied between the surface of the substrate and the shielding plate in a state where the shielding plate is opposed to the surface of the substrate with a space therebetween, so that the supplied gas is separated from the surface of the substrate and the shielding plate. Charge between. By filling the space between the surface of the substrate and the shielding plate with a predetermined gas, it is possible to prevent impurities from adhering to the surface of the substrate and oxidation of the metal film formed on the surface of the substrate. Can do.
Preferably, the gas is preheated before being supplied between the surface of the substrate and the blocking plate.

The invention according to claim 9 is a substrate holding means for holding a substrate, a rotating means for rotating the substrate holding means, a chemical solution supplying means for supplying a chemical solution to the surface of the substrate held by the substrate holding means, a rinse liquid supply means for supplying a rinse liquid to the surface of the substrate held by the substrate holding unit, the rinsing liquid low room temperature surface tension than the surface of the substrate held by the substrate holding means a low surface tension liquid supply means for supplying a low surface tension liquid, and hot water supply means for supplying a high-temperature hot water than the low surface tension liquid to the back surface of the surface opposite of the substrate, said rotating means, the chemical supply means, said rinsing liquid supply means, said by controlling the low surface tension liquid supply means and said hot water supply means, said by supplying the chemical solution to the surface while rotating the substrate Chemical treatment step of treating the surface throughout by the chemical, rinsing step of washing away the chemical solution adhering to the surface in the rinsing liquid by supplying a rinse liquid to the surface while rotating the substrate, wherein while rotating the substrate while supplying the hot water to the back surface of the substrate, low surface tension liquid hot water supplying step to supply said low surface tension liquid to the surface of the substrate which rinsing liquid is attached, and the low surface tension liquid and the hot water Control for executing a swing-off step of rotating and removing the low surface tension liquid adhering to the front surface and the hot water adhering to the rear surface by rotating the substrate in a state where the supply of water is stopped A substrate processing apparatus.

With this configuration, the substrate processing method according to claim 1 can be performed. As a result, an effect similar to the effect described in relation to claim 1 can be obtained.
According to a tenth aspect of the present invention, the hot water supply means preferably supplies hot water having a temperature that raises the temperature of the low surface tension liquid to about the boiling point on the surface of the substrate. With this configuration, the substrate processing method according to claim 2 can be carried out.
As described in claim 11, the low surface tension liquid is preferably an IPA liquid. With this configuration, the substrate processing method according to claim 3 can be carried out.
According to a twelfth aspect of the present invention, it is preferable that the control means terminates the supply of the low surface tension liquid after the end of the supply of the hot water. With this configuration, the substrate processing method according to claim 4 can be carried out. As a result, an effect similar to the effect described in relation to claim 4 can be obtained.
According to a thirteenth aspect of the present invention, it is preferable that the control unit starts the supply of the warm water and the supply of the low surface tension liquid at the same time. With this configuration, the substrate processing method according to claim 5 can be carried out. As a result, an effect similar to the effect described in relation to claim 5 can be obtained.
According to a fourteenth aspect of the present invention, the control means preferably starts the supply of the hot water prior to the supply of the low surface tension liquid. With this configuration, the substrate processing method according to claim 6 can be carried out. As a result, an effect similar to the effect described in relation to claim 6 can be obtained.
According to a fifteenth aspect of the present invention, the substrate is held opposite to the surface of the substrate held by the substrate holding means with a space therebetween, and the space on the surface of the substrate is blocked from the surroundings. and blocking plate, nitrogen gas, and a gas supply means for supplying one of the gas of the IPA vapor or dry air further seen free between the surface of the substrate and the blocking plate, wherein, the By further controlling the blocking plate and the gas supply means, in the low surface tension liquid / warm water supplying step, the blocking plate is disposed opposite to the surface of the substrate in a position close to the surface of the substrate. performing nitrogen gas, a gas supply step of supplying one of the gas of the IPA vapor or dry air between the blocking plate and the surface, the substrate according to any one of claims 9 to 14 It is a management apparatus.

With this configuration, the substrate processing method according to claim 7 can be carried out. As a result, an effect similar to the effect described in relation to claim 7 can be obtained.
Preferably, the substrate processing apparatus further includes means for preheating the gas before being supplied between the surface of the substrate and the blocking plate. With this configuration, the substrate processing method according to claim 8 can be carried out.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic side view of a substrate processing apparatus according to an embodiment of the present invention.
The substrate processing apparatus 1 is a single wafer type apparatus that processes semiconductor wafers (hereinafter simply referred to as “wafers”) W as an example of a substrate one by one. The substrate processing apparatus 1 includes a spin chuck 2 that holds a wafer W substantially horizontally, a nozzle 3 that supplies pure water as an example of a rinse liquid to the surface of the wafer W held by the spin chuck 2, and a spin chuck. 2 is provided with a chemical nozzle 33 for supplying a chemical liquid to the surface of the wafer W held by 2 and a blocking plate 4 for blocking the atmosphere near the surface of the wafer W held by the spin chuck 2 from its surroundings. Yes.

  The spin chuck 2 has a configuration in which a disk-shaped spin base 6 is mounted substantially horizontally on the upper end of a spin shaft 5 extending substantially vertically. On the upper surface of the spin base 6, a plurality of clamping members 7 are arranged at substantially equal intervals on a circumference centered on the central axis of the spin shaft 5. The plurality of clamping members 7 can hold the wafer W in a substantially horizontal posture by clamping the end face of the wafer W at a plurality of different positions.

A motor 8 is coupled to the spin shaft 5. The spin shaft 5 can be rotated about its central axis by the rotational force generated by the motor 8. Then, the wafer W can be rotated together with the spin base 6 by rotating the spin shaft 5 while the wafer W is held by the plurality of clamping members 7.
The spin shaft 5 is formed hollow. A temperature adjusting liquid circulation pipe 9 is inserted into the spin shaft 5. A hot water supply pipe 32 is connected to the temperature adjusting liquid circulation pipe 9. Through this hot water supply pipe 32, hot water of about 80 ° C. as an example of the temperature adjustment liquid is supplied to the temperature adjustment liquid circulation pipe 9. A warm water valve 10 is interposed in the middle of the warm water supply pipe 32. The temperature adjusting liquid circulation tube 9 extends to a position close to the center of the back surface (lower surface) of the wafer W held by the spin chuck 2 (the plurality of clamping members 7), A back nozzle 11 that discharges hot water supplied to the flow pipe 9 is provided. The hot water discharged from the back surface nozzle 11 is incident substantially perpendicular to the center of the back surface of the wafer W held by the spin chuck 2, for example.

The hot water may be generated by heating pure water in a hot water generation cabinet separately provided from the substrate processing apparatus 1, and supplied from the hot water generation cabinet to the hot water supply pipe 32, or the substrate processing apparatus 1. May be supplied to the hot water supply pipe 32 from the hot water line.
The nozzle 3 is attached to the tip of an arm 12 provided above the spin chuck 2. The arm 12 is supported by an arm support shaft 13 extending substantially vertically on the side of the spin chuck 2, and extends substantially horizontally from the arm support shaft 13. An arm drive mechanism 14 is coupled to the arm support shaft 13. By inputting a driving force from the arm drive mechanism 14 to the arm support shaft 13 and rotating the arm support shaft 13 within a predetermined angle range, the arm 12 can be swung within the predetermined angle range. ing.

A pure water supply pipe 15 is connected to the nozzle 3. A pure water valve 16 is interposed in the middle of the pure water supply pipe 15. When the pure water valve 16 is opened, pure water is supplied from the pure water supply pipe 15 to the nozzle 3.
The chemical nozzle 33 is disposed above the spin chuck 2 with the discharge port facing the rotation center of the wafer W. A chemical solution supply pipe 34 is connected to the chemical solution nozzle 33. A chemical liquid valve 35 is interposed in the middle of the chemical liquid supply pipe 34. When the chemical liquid valve 35 is opened, the chemical liquid is supplied from the chemical liquid supply pipe 34 to the chemical liquid nozzle 33.

  The blocking plate 4 is formed in a disc shape having a diameter substantially equal to or larger than that of the wafer W, and is disposed substantially horizontally above the spin chuck 2. On the upper surface of the blocking plate 4, a rotating shaft 17 centering on a vertical axis common to the spin shaft 5 of the spin chuck 2 is fixed. The rotating shaft 17 is hollow. A low surface tension liquid circulation pipe 18 is inserted into the rotary shaft 17.

  An IPA supply pipe 19 is connected to the low surface tension liquid circulation pipe 18. Through this IPA supply pipe 19, a normal temperature (about 25 ° C.) IPA (isopropyl alcohol) liquid as an example of a low surface tension liquid is supplied to the low surface tension liquid circulation pipe 18. An IPA valve 20 is interposed in the middle of the IPA supply pipe 19. Further, the low surface tension liquid circulation pipe 18 extends to the lower surface of the blocking plate 4, and the tip thereof forms an IPA nozzle 21 for discharging the IPA liquid.

  Further, a nitrogen gas flow passage 22 through which nitrogen gas flows is formed between the inner wall surface of the rotating shaft 17 and the low surface tension liquid circulation pipe 18. A nitrogen gas supply pipe 23 is connected to the nitrogen gas flow passage 22. Through this nitrogen gas supply pipe 23, nitrogen gas from a supply source (not shown) is supplied to the nitrogen gas flow passage 22. A nitrogen gas valve 24 is interposed in the middle of the nitrogen gas supply pipe 23. The nitrogen gas flow passage 22 is annularly opened around the IPA nozzle 21 on the lower surface of the blocking plate 4 to form a nitrogen gas discharge port 25 for discharging nitrogen gas.

  The rotating shaft 17 is attached in a state of hanging from the vicinity of the tip of an arm 26 extending substantially horizontally. The arm 26 is separated from the position where the blocking plate 4 is largely separated above the spin chuck 2 (position indicated by a solid line in FIG. 1) and the surface of the wafer W held by the spin chuck 2 with a small gap. A blocking plate raising / lowering drive mechanism 27 for moving up and down between the adjacent positions (positions indicated by broken lines) is coupled. Further, in connection with the arm 26, a blocking plate rotation drive mechanism 28 is provided for rotating the blocking plate 4 in synchronization with the rotation of the wafer W by the spin chuck 2.

The spin chuck 2 is housed in a cup 29 having a bottomed cylindrical container shape. A waste liquid line 30 is connected to the bottom of the cup 29. The liquid (pure water, hot water, and IPA liquid) collected at the bottom of the cup 29 can be discarded via the waste liquid line 30.
FIG. 2 is a block diagram showing an electrical configuration of the substrate processing apparatus.
The substrate processing apparatus 1 includes a control unit 31 configured with, for example, a microcomputer. The microcomputer includes a CPU, RAM, ROM, and the like.

The control unit 31 controls the driving of the motor 8, the arm drive mechanism 14, the shield plate lifting / lowering drive mechanism 27, and the shield plate rotation drive mechanism 28 according to a predetermined program, and the IPA valve 20, the nitrogen gas valve 24, and the pure water valve. 16. Opening / closing of the chemical liquid valve 35 and the hot water valve 10 is controlled.
FIG. 3 is a timing chart for explaining processing in the substrate processing apparatus.

  First, an unprocessed wafer W is loaded into the substrate processing apparatus 1 by a transfer hand (not shown) and delivered to the spin chuck 2. At this time, the blocking plate 3 is retracted to a position far above the spin chuck 2 so as not to hinder the loading of the wafer W. Further, the nozzle 3 (arm 12) is retracted from above the spin chuck 2 so as not to hinder the loading of the wafer W.

When the wafer W is held on the spin chuck 2, the motor 8 is driven to start the rotation of the wafer W. The rotation speed of the wafer W is 1000 rpm, for example.
Then, the chemical liquid valve 35 is opened, and the chemical liquid is supplied from the chemical liquid nozzle 33 toward the center of the surface of the rotating wafer W. For example, hydrofluoric acid is supplied as the chemical solution. The chemical solution supplied to the center of the surface of the wafer W spreads around the periphery of the wafer W due to the centrifugal force generated by the rotation of the wafer W, and is supplied to the entire surface of the wafer W. As a result, the entire surface of the wafer W is treated with a chemical solution (cleaned with hydrofluoric acid) (chemical solution treatment). When the chemical liquid is supplied to the surface of the wafer W over a predetermined time, the chemical liquid valve 35 is closed and the chemical liquid processing is completed. Next, the drive of the arm drive mechanism 14 is controlled, and the nozzle 3 is disposed above the wafer W held by the spin chuck 2.

  Then, the pure water valve 16 is opened, and pure water is supplied from the nozzle 3 to the surface of the wafer W while the wafer W is rotated by the spin chuck 2. Further, when supplying pure water, the arm 12 is swung within a predetermined angle range. As a result, the pure water landing position on the surface of the wafer W moves within a range extending from the rotation center of the wafer W to the peripheral edge of the wafer W while drawing an arc-shaped locus. As a result, pure water is supplied uniformly over the entire surface of the wafer W, and the chemical solution adhering to the surface of the wafer W is washed away with pure water (rinse treatment).

The pure water supplied to the surface of the wafer W is scattered from the periphery of the wafer W to the side by the centrifugal force generated by the rotation of the wafer W. The pure water scattered from the wafer W is collected at the bottom of the cup 29 and discarded via the waste liquid line 30.
When supplying pure water, the nozzle 3 is not moved from the rotation center of the wafer W to the peripheral edge of the wafer W, and the pure water is supplied to the wafer W while the nozzle 3 is fixed above the wafer W. Also good.

When a predetermined time elapses after the pure water valve 16 is opened, the pure water valve 16 is closed (time T1). Then, the drive of the arm drive mechanism 14 is controlled, and the nozzle 3 (arm 12) is retracted from above the spin chuck 2.
Next, a drying process for drying the wafer W is performed. First, the drive of the shield plate lifting / lowering drive mechanism 27 is controlled, and the shield plate 4 is lowered to a position close to the surface of the wafer W (time T2). Then, the drive of the shield plate rotation drive mechanism 28 is controlled, and the shield plate 4 is rotated in the same direction as the wafer W at the same rotational speed. On the other hand, the nitrogen gas valve 24 is opened, and nitrogen gas is supplied between the wafer W (the surface thereof) and the blocking plate 4 from the nitrogen gas discharge port 25 (time T2). Further, the IPA valve 20 is opened, and the IPA liquid is supplied from the IPA nozzle 21 to the surface of the wafer W (time T2). Further, the hot water valve 10 is opened, and hot water is supplied from the back surface nozzle 11 to the back surface of the wafer W (time T2).

The wafer W is heated by supplying hot water to the back surface of the wafer W. When the IPA liquid is supplied to the heated surface of the wafer W, the IPA liquid is heated through the wafer W. As a result, the temperature of the IPA liquid on the surface of the wafer W rises to about the boiling point of IPA (about 82.5 ° C.), and the pure water on the surface of the wafer W is satisfactorily replaced with the IPA liquid.
Further, while the IPA liquid is supplied to the surface of the wafer W, the wafer W is rotated at a predetermined rotation speed (for example, 1000 rpm). As a result, the IPA liquid spreads uniformly over the entire surface of the wafer W, and good replacement of pure water with the IPA liquid is achieved over the entire surface of the wafer W.

  When a predetermined time elapses after the hot water valve 10 is opened, the hot water valve 10 is closed (time T3). Even after the hot water valve 10 is closed, the supply of the IPA liquid to the surface of the wafer W is continued. Therefore, after the supply of hot water to the back surface of the wafer W is stopped, it is possible to prevent the warm water remaining on the back surface of the wafer W from flowing around the peripheral end surface to the peripheral portion of the surface. As a result, it is possible to prevent the pattern collapse accompanying the evaporation of the hot water at the peripheral edge of the surface of the substrate and the generation of the dry trace of the hot water.

  When a predetermined time elapses after the hot water valve 10 is closed, the IPA valve 20 is closed (T4). Then, the drive of the motor 8 is controlled, and the rotation speed of the wafer W is increased to a predetermined rotation speed (for example, 3000 rpm). As a result, the IPA liquid adhering to the front surface of the wafer W and the hot water adhering to the back surface of the wafer W are spun off by the centrifugal force and removed. The IPA liquid and hot water removed from the wafer W are collected at the bottom of the cup 29 and discarded via the waste liquid line 30.

  When a predetermined time elapses after the supply of IPA is stopped, the nitrogen gas valve 24 is closed (time T5). Further, the driving of the motor 8 is stopped, and the rotation of the wafer W is stopped (time T5). Further, the drive of the shield plate lifting / lowering drive mechanism 27 is controlled, and the shield plate 4 is raised from a position close to the surface of the wafer W to a position far apart above the spin chuck 2 (time T5). Thereby, the rinsing process and the drying process for the wafer W are completed. Then, the wafer W is unloaded from the substrate processing apparatus 1 by a transfer hand (not shown).

As described above, after pure water is supplied to the surface of the wafer W and rinse processing is performed on the surface of the wafer W (processing to wash the surface of the wafer W with pure water), IPA having a surface tension lower than that of pure water. The liquid is supplied to the surface of the wafer W. In parallel with the supply of the IPA liquid, hot water is supplied to the back surface opposite to the front surface of the wafer W.
By supplying hot water to the back surface of the wafer W, the wafer W can be heated, and the IPA liquid supplied to the surface of the wafer W via the wafer W can be heated. Thereby, the temperature of the IPA liquid on the surface of the wafer W can be raised to room temperature or higher, and the replacement efficiency between the pure water and the IPA liquid on the surface of the wafer W can be improved. As a result, pure water can be removed well from the surface of the wafer W.

Further, since the IPA liquid is heated through the wafer W, unlike the configuration in which the IPA liquid is heated before being supplied to the surface of the wafer W, it is not necessary to provide a heating mechanism in the IPA liquid supply system. Therefore, there is no possibility that the configuration of the substrate processing apparatus 1 is complicated and the cost is increased.
Further, since warm water is used as the temperature adjusting liquid, it is not necessary to take countermeasures against corrosion or the like in the supply system for supplying warm water to the surface of the wafer W. Therefore, pure water can be satisfactorily removed from the surface of the wafer W with a simpler configuration.

Further, the supply of the IPA liquid to the surface of the wafer W is continued after the supply of the warm water to the wafer W is completed, so that the warm water remaining on the back surface of the wafer W after the supply of the warm water wraps around the peripheral portion of the surface of the wafer W. This can be prevented. As a result, it is possible to prevent the pattern collapse accompanying the evaporation of the hot water at the peripheral edge of the surface of the wafer W, the generation of dry marks of the hot water, and the like.
The supply of hot water to the back surface of the wafer W is started simultaneously with the start of the supply of the IPA liquid to the front surface of the wafer W. Therefore, the time during which the hot water is supplied to the back surface of the wafer W can be made shorter than the time during which the IPA liquid is supplied to the front surface of the wafer W. As a result, the time required for the entire process can be shortened.

  Further, nitrogen gas is supplied between the surface of the wafer W and the shielding plate 4 in a state where the shielding plate 4 is opposed to the surface of the wafer W with a space therebetween, whereby the nitrogen gas is converted into the wafer. It fills between the surface of W and the shielding plate 4. By filling the space between the surface of the wafer W and the shielding plate 4 with nitrogen gas, impurities adhere to the surface of the wafer W, and metal films and the like formed on the surface of the wafer W are oxidized. Can be prevented.

  In the above-described embodiment, the hot water supply start and the IPA supply start are performed at the same timing (time T2). However, after the pure water supply stop (time T1), the IPA supply start (time T2) is performed. ), The supply of hot water may be started (time T6 indicated by a broken line in FIG. 3). In this case, the wafer W can be heated prior to the start of supply of the IPA liquid to the surface of the wafer W (time T2). As a result, the IPA liquid can be heated on the surface of the wafer W immediately after the start of the supply of the IPA liquid, and good replacement between the IPA liquid and pure water can be achieved.

Further, it is assumed that nitrogen gas is supplied between the surface of the wafer W and the shielding plate 4, but instead of nitrogen gas between the surface of the wafer W and the shielding plate 4, IPA vapor (IPA vapor) or Dry air (air from which moisture has been removed) may be supplied .

Further, the nitrogen gas may be heated to an appropriate temperature before being supplied between the surface of the wafer W and the shielding plate 4. Thereby, it is possible to prevent the temperature of the IPA liquid from being lowered by the nitrogen gas.
In the above embodiment, the IPA liquid is exemplified as an example of the low surface tension liquid. However, as the low surface tension liquid, IPA, HFE (hydrofluoroether), methanol, ethanol, acetone, and Trans-1,2 A liquid containing at least one of dichloroethylene can be used. The low surface tension liquid is not limited to a single component, but may be a liquid mixed with other components. For example, a mixed liquid of IPA liquid and pure water may be used, or a mixed liquid of IPA liquid and HFE may be used.

  In addition, various design changes can be made within the scope of matters described in the claims.

1 is a schematic side view of a substrate processing apparatus according to an embodiment of the present invention. It is a block diagram which shows the electric constitution of a substrate processing apparatus. It is a timing chart for demonstrating the rinse process and drying process in a substrate processing apparatus.

Explanation of symbols

1. Substrate processing apparatus 2. Spin chuck (substrate holding means)
4 Blocking plate 9 Temperature control fluid distribution pipe (temperature control fluid supply means)
10 Hot water valve (Temperature adjustment liquid supply means)
15 Supply pipe (rinsing liquid supply means)
16 Pure water valve (Rinse solution supply means)
18 Low surface tension liquid circulation pipe (Low surface tension liquid supply means)
19 IPA supply pipe (low surface tension liquid supply means)
20 IPA valve (low surface tension liquid supply means)
21 IPA nozzle (low surface tension liquid supply means)
22 Nitrogen gas flow passage (gas supply means)
23 Nitrogen gas supply pipe (gas supply means)
24 Nitrogen gas valve (gas supply means)
25 Nitrogen gas outlet (gas supply means)
31 Control Unit W Wafer (Substrate)

Claims (16)

A chemical treatment process for treating the entire surface with the chemical solution by supplying the chemical solution to the surface while rotating the substrate;
A rinsing step of rinsing the chemical solution adhering to the surface with the rinsing liquid by supplying the rinsing liquid to the surface while rotating the substrate;
A low surface tension liquid supplying step of supplying a low surface tension liquid at room temperature lower surface tension than the rinsing liquid while rotating the substrate on which the rinsing liquid is adhered to said surface,
In parallel with the low surface tension liquid supply step , hot water having a temperature higher than that of the low surface tension liquid is supplied to the back surface opposite to the front surface of the substrate, whereby the low surface tension liquid is formed on the surface of the substrate. the elevated temperature, and the hot water supplying step of replacing the rinsing liquid adhering to the surface of the low surface tension liquid in the substrate,
By rotating the substrate in a state where supply of the low surface tension liquid and the hot water is stopped, the low surface tension liquid adhering to the surface and the hot water adhering to the back surface are removed by shaking. A substrate processing method including a swing-off step .   The substrate processing method according to claim 1, wherein, in the hot water supply step, the temperature of the low surface tension liquid is increased to about the boiling point on the surface of the substrate.   The substrate processing method according to claim 1, wherein the low surface tension liquid is an IPA liquid. The low surface tension liquid supplying step, the is terminated after the completion of the warm water supply step, the substrate processing method according to any one of claims 1-3. The temperature water supplying step, the starts low surface tension liquids start of supply step at the same time, the substrate processing method according to any one of claims 1-4. The temperature water supplying step, the initiated prior to the low surface tension liquid supply step, the substrate processing method according to any one of claims 1-4. In the low surface tension liquid supply step, a blocking plate for blocking the space on the surface of the substrate from its surroundings is disposed opposite to the surface of the substrate in a state of being opposed to the surface of the substrate. The substrate processing method as described in any one of Claims 1-6 which performs the gas supply process which supplies either the gas of nitrogen gas, IPA vapor, or dry air between the said surface and the said shielding board.   The substrate processing method according to claim 7, wherein the gas is preheated before being supplied between the surface of the substrate and the blocking plate. Substrate holding means for holding the substrate;
Rotating means for rotating the substrate holding means;
Chemical supply means for supplying a chemical to the surface of the substrate held by the substrate holding means;
A rinse liquid supply means for supplying a rinse liquid to the surface of the substrate held by the substrate holding means,
A low surface tension liquid supply means for supplying a low surface tension liquid at room temperature having a surface tension lower than that of the rinse liquid to the surface of the substrate held by the substrate holding means ;
And the hot water supply means for supplying a high-temperature hot water than the low surface tension liquid to the back surface of the surface opposite of the substrate,
Said rotating means, said chemical supply means, said rinsing liquid supply means, said by controlling the low surface tension liquid supply means and said hot water supply means, by supplying the chemical solution to the surface while rotating the substrate A chemical treatment process for treating the entire surface with the chemical liquid, a rinse process for washing the chemical liquid adhering to the surface with the rinse liquid by supplying the rinse liquid to the surface while rotating the substrate, and rotating the substrate while supplying the hot water to the back surface of the substrate, the said surface of the substrate rinsing liquid adhering low surface tension liquid hot water supplying step to supply the low surface tension liquid, and the low surface tension liquid and the By rotating the substrate with the hot water supply stopped, the low surface tension liquid adhering to the front surface and the back surface are attached. To and including a control means for performing a shake-off process to remove shake off the hot water, the substrate processing apparatus.   The substrate processing apparatus according to claim 9, wherein the hot water supply means supplies hot water having a temperature that raises the temperature of the low surface tension liquid to about the boiling point thereof on the surface of the substrate.   The substrate processing apparatus according to claim 9, wherein the low surface tension liquid is an IPA liquid.   The substrate processing apparatus according to claim 9, wherein the control unit terminates the supply of the low surface tension liquid after the end of the supply of the hot water.   The substrate processing apparatus according to claim 9, wherein the control unit starts the supply of the hot water and the supply of the low surface tension liquid simultaneously.   The substrate processing apparatus according to claim 9, wherein the control unit starts supplying the hot water prior to supplying the low surface tension liquid. A blocking plate disposed opposite to and spaced from the surface of the substrate held by the substrate holding means, and blocking a space on the surface of the substrate from its surroundings;
Further seen including a gas supply means for supplying nitrogen gas, any gas of IPA vapor or dry air between the blocking plate and the surface of the substrate,
The control unit further controls the blocking plate and the gas supply unit to dispose the blocking plate at a position close to the surface of the substrate in the low surface tension liquid / hot water supply step. state, executes nitrogen gas, a gas supply step of supplying one of the gas of the IPA vapor or dry air between the blocking plate and the surface of the substrate, according to any one of claims 9 to 14 Substrate processing equipment.   The substrate processing apparatus according to claim 15, further comprising means for preheating the gas before being supplied between the surface of the substrate and the blocking plate.

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