JP7558455B1 - Plating Equipment - Google Patents

Abstract

The present invention improves uniformity of plating film thickness distribution in a plating apparatus that supplies power only to one opposing side of a substrate. The intermediate mask 30 includes a pair of first side members 31 facing the power supply side member of the substrate holder, a pair of second side members 33 facing the non-power supply side member of the substrate holder, a first electric field supply member 35 arranged on the first side members 31, and a second electric field supply member 37 arranged on the second side members 33. The first electric field supply member 35 is configured to extend along the first side member 31 between a first position PG-1 on an extension of a first side 30a-1 of a second central opening 30a, and a second position PG-2 on an extension of a second side 30a-2 facing the first side 30a-1. The second electric field supplying member 37 is configured to supply an electric field to a pair of positions away from the third position PG-3 and the fourth position PG-4 between a third position PG-3 on an extension of the third side 30a-3 of the second central opening 30a and a fourth position PG-4 on an extension of the fourth side 30a-4 opposite to the third side 30a-3.

Description

This application relates to a plating apparatus.

A known example of an electrolytic plating device is a dip-type plating device. A dip-type plating device is configured to hold a substrate in a substrate holder so that the surface to be plated faces sideways and immerse it in a plating solution, and to deposit a conductive film on the surface to be plated by applying a voltage between the substrate and an anode.

Patent Document 1 discloses a dip-type plating apparatus for plating rectangular substrates. This plating apparatus is equipped with an anode mask for adjusting the electric field (current) from the anode to the substrate in the vicinity of the anode, and an intermediate mask for adjusting the electric field from the anode to the substrate in the vicinity of the substrate. Patent Document 1 also discloses that an auxiliary anode is provided on the intermediate mask to make the plating film thickness distribution on the substrate uniform.

JP 2023-1082 A

The plating apparatus disclosed in Patent Document 1 does not take into consideration improving the uniformity of the plating film thickness distribution in a plating apparatus that supplies power only to one opposing edge of a substrate.

That is, some types of plating equipment use a substrate holder that is configured to supply power to one pair of opposing sides of a rectangular substrate and not to supply power to the other pair of opposing sides, primarily for the purpose of simplifying the substrate holder configuration. In this case, the state of electric field formation is different compared to plating equipment that supplies power to all four sides of the substrate, so simply providing an auxiliary anode on the intermediate mask is likely to result in variation in the plating film thickness distribution on the substrate.

Therefore, one of the objectives of this application is to improve the uniformity of plating film thickness distribution in a plating apparatus that supplies power only to one opposing edge of a substrate.

According to one embodiment, the present invention includes a plating tank for containing a plating solution, an anode disposed in the plating tank, and a substrate holder for holding a rectangular substrate such that the surface to be plated faces the anode, the substrate holder having a power supply side member that supplies power to a pair of opposing sides of the rectangular substrate and a non-power supply side member that does not supply power to another pair of opposing sides of the rectangular substrate, an anode mask disposed between the anode and the substrate holder and having a rectangular first central opening penetrating the anode side and the substrate holder side, and an intermediate mask disposed between the anode mask and the substrate holder and having a rectangular second central opening penetrating the anode side and the substrate holder side, the intermediate mask having a pair of first side members disposed opposite the power supply side members of the substrate holder and a pair of second side members disposed opposite the non-power supply side members of the substrate holder. a pair of second side members arranged in a pair adjacent to each other, a first electric field supply member arranged on a surface of each of the pair of first side members facing the substrate holder, and a second electric field supply member arranged on a surface of each of the pair of second side members facing the substrate holder, wherein the first electric field supply member is configured to extend along the first side members between a first position on an extension of a first side of the rectangular second central opening and a second position on an extension of a second side opposite to the first side, and the second electric field supply member is configured to supply an electric field to the pair between a third position on an extension of a third side of the rectangular second central opening and a fourth position on an extension of a fourth side opposite to the third side, away from the third position and the fourth position.

FIG. 1 is a cross-sectional view showing the overall configuration of a plating apparatus according to one embodiment. FIG. 2 is a diagram illustrating a schematic configuration of a substrate holder according to an embodiment. FIG. 3 is a diagram showing a schematic configuration of an intermediate mask according to an embodiment. FIG. 4 is a cross-sectional view taken along line AA of FIG. FIG. 5 is a cross-sectional view taken along line BB of FIG. FIG. 6 is a diagram illustrating the schematic configuration of intermediate masks according to comparative examples 1 and 2. In FIG. FIG. 7 is a diagram showing the plating film thickness distribution using the intermediate mask of the embodiment and the intermediate mask of the comparative example. FIG. 8 is a diagram showing a comparison result of the uniformity of the plating film thickness distribution using the intermediate mask of the embodiment and the intermediate mask of the comparative example. FIG. 9 is a diagram showing a schematic configuration of an intermediate mask according to another embodiment.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings described below, the same or corresponding components are designated by the same reference numerals and duplicated descriptions are omitted.

Figure 1 is a cross-sectional view showing the overall configuration of a plating apparatus according to one embodiment. As shown, the plating apparatus 10 according to this embodiment has an anode holder 20 configured to hold an anode 21, a substrate holder 40 configured to hold a rectangular substrate WF, and a plating tank 50 that houses the anode holder 20 and the substrate holder 40 therein.

As shown in FIG. 1, the plating tank 50 has a plating treatment tank 52 that contains plating solution Q containing additives, a plating solution discharge tank 54 that receives and discharges plating solution Q that overflows from the plating treatment tank 52, and a partition wall 55 that separates the plating treatment tank 52 from the plating solution discharge tank 54.

The anode holder 20 holding the anode 21 and the substrate holder 40 holding the substrate WF are immersed in the plating solution Q in the plating tank 52, and are arranged facing each other so that the anode 21 and the plated surface WF1 of the substrate WF are approximately parallel. In other words, the substrate holder 40 holds the substrate WF with the plated surface WF1 facing to the side. A voltage is applied to the anode 21 and the substrate WF while they are immersed in the plating solution Q in the plating tank 52. As a result, metal ions are reduced on the plated surface WF1 of the substrate WF, and a film is formed on the plated surface WF1.

2 is a diagram showing a schematic configuration of the substrate holder. As shown in FIG. 2, the substrate holder 40 has a power supply side member 42 that supplies power to a pair of opposing sides of the rectangular substrate WF, and a non-power supply side member 44 that does not supply power to the other pair of opposing sides of the rectangular substrate WF. The power supply side member 42 has a contact 43 that comes into contact with the substrate WF when the substrate WF is attached to the substrate holder 40, and is configured to supply power to the pair of sides of the substrate WF from a power source (not shown) via the contact 43. On the other hand, the non-power supply side member 44 does not have a contact, and does not supply power to the other pair of sides of the substrate WF.

In this embodiment, the substrate holder 40 is configured to supply power to a pair of left and right sides of the substrate WF, but not to supply power to a pair of top and bottom sides of the substrate WF. However, without being limited thereto, the substrate holder 40 may be configured to supply power to a pair of top and bottom sides of the substrate WF, but not to supply power to a pair of left and right sides of the substrate WF.

Returning to the explanation of Figure 1, the plating tank 52 has a plating solution supply port 56 for supplying plating solution Q into the tank. The plating solution discharge tank 54 has a plating solution discharge port 57 for discharging plating solution Q that has overflowed from the plating tank 52. The plating solution supply port 56 is located at the bottom of the plating tank 52, and the plating solution discharge port 57 is located at the bottom of the plating solution discharge tank 54.

When plating solution Q is supplied to plating tank 52 from plating solution supply port 56, plating solution Q overflows from plating tank 52, crosses partition wall 55 and flows into plating solution discharge tank 54. Plating solution Q that flows into plating solution discharge tank 54 is discharged from plating solution discharge port 57, and impurities are removed by a filter or the like in plating solution circulation device 58. Plating solution Q from which impurities have been removed is supplied to plating tank 52 via plating solution supply port 56 by plating solution circulation device 58.

The plating apparatus 10 has an anode mask 70 for adjusting the electric field between the anode 21 and the substrate WF. The anode mask 70 is, for example, a substantially plate-shaped member made of a dielectric material, and is provided on the front surface of the anode holder 20. Here, the front surface of the anode holder 20 refers to the surface facing the substrate holder 40. That is, the anode mask 70 is disposed between the anode 21 and the substrate holder 40. The anode mask 70 has a first central opening 70a at the substantially central portion, which penetrates between the anode 21 side and the substrate holder 40 side, in other words, through which the current flowing between the anode 21 and the substrate WF passes. The diameter of the first central opening 70a is preferably smaller than the diameter of the anode 21. The anode mask 70 is configured so that the diameter of the first central opening 70a can be adjusted.

The plating apparatus 10 also has an intermediate mask 30, which is an example of an electric field adjusting member for adjusting the electric field between the anode 21 and the substrate WF. The intermediate mask 30 is, for example, a substantially plate-shaped member made of a dielectric material, and is disposed between the anode mask 70 and the substrate holder 40 (substrate WF). The intermediate mask 30 has a second central opening 30a that penetrates between the anode 21 side and the substrate holder 40 side, in other words, through which the current flowing between the anode 21 and the substrate WF passes. The diameter of the second central opening 30a is preferably smaller than the diameter of the substrate WF. The intermediate mask 30 is configured to be able to adjust the diameter of the second central opening 30a.

A paddle 18 is provided between the intermediate mask 30 and the substrate holder 40 to stir the plating solution Q near the plated surface WF1 of the substrate WF. One end of the paddle 18 is fixed to a paddle drive device 19. The paddle 18 is moved along the plated surface WF1 of the substrate WF by the paddle drive device 19, thereby stirring the plating solution Q.

The plating apparatus 10 further includes a membrane box 60. The membrane box 60 is a box-shaped member for accommodating the anode holder 20 (anode 21) and the anode mask 70 in the plating tank 50. The membrane box 60 includes a membrane 62 disposed between the anode mask 70 and the intermediate mask 30. The membrane 62 is a membrane that separates an anode region in which the anode 21 is disposed and a cathode region in which the substrate WF is disposed. The membrane box 60 includes a plug 64 for discharging the plating solution Q from the membrane box 60 when the membrane box 60 is lifted from the plating tank 50.

In a plating apparatus equipped with an intermediate mask 30 as in this embodiment, it is known to provide an auxiliary anode on the intermediate mask 30. However, when power is supplied only to one opposing edge of the substrate as in the above-mentioned substrate holder 40, the state of electric field formation is different compared to when power is supplied to the four edges of the substrate, and therefore it is necessary to provide an auxiliary anode according to the state of electric field formation. This point will be explained below.

Figure 3 is a diagram showing a schematic configuration of an intermediate mask according to one embodiment. Figure 4 is a diagram showing a cross section taken along line A-A in Figure 3. Figure 5 is a diagram showing a cross section taken along line B-B in Figure 3.

As shown in Figures 3 to 5, the intermediate mask 30 of this embodiment includes a pair of first side members 31 arranged opposite the power supply side members 42 of the substrate holder 40, and a pair of second side members 33 arranged opposite the non-power supply side members 44 of the substrate holder 40.

The intermediate mask 30 also includes a first electric field supply member 35 for supplying an electric field arranged on the substrate holder side surface of the first edge member 31, and a second electric field supply member 37 for supplying an electric field arranged on the substrate holder side surface of the second edge member 33.

The first electric field supply member 35 is configured to extend along the first edge member 31 between a first position PG-1 on an extension of a first edge 30a-1 of the rectangular second central opening 30a and a second position PG-2 on an extension of a second edge 30a-2 opposite the first edge 30a-1.

More specifically, the first electric field supply member 35 includes a first groove 32-1 extending from a first position PG-1 to a second position PG-2, and a first auxiliary anode 34-1 disposed inside the first groove 32-1. The first electric field supply member 35 also includes a first shielding member 36-1 disposed in the first groove 32-1 so as to shield the first auxiliary anode 34-1, and a first opening 36-1a formed in the first shielding member 36-1 from the first position PG-1 to the second position PG-2. As a result, the first auxiliary anode 34-1 is exposed from the first opening 36-1a, and an electric field is supplied to the substrate WF via the first opening 36-1a.

The first electric field supply member 35 also includes a first membrane 38-1 disposed in the first opening 36-1a. The first membrane 38-1 is a diaphragm such as an ion exchange membrane. By providing the first membrane 38-1, it is possible to prevent decomposition products and the like generated due to the first auxiliary anode 34-1 from adhering to the plating surface WF1 of the substrate WF.

On the other hand, the second electric field supplying member 37 is configured to supply an electric field to a pair away from the third position PG-3 and the fourth position PG-4 between a third position PG-3 on the extension of the third side 30a-3 of the rectangular second central opening 30a and a fourth position PG-4 on the extension of the fourth side 30a-4 opposite the third side 30a-3.

More specifically, the second electric field supply member 37 includes a second groove 32-2 extending from the third position PG-3 to the fourth position PG-4, and a second auxiliary anode 34-2 disposed inside the second groove 32-2. The second electric field supply member 37 also includes a second shielding member 36-2 disposed in the second groove 32-2 so as to shield the second auxiliary anode 34-2. The second electric field supply member 37 also includes a second opening 36-2a formed in the second shielding member 36-2 away from the third position PG-3, and a third opening 36-2b formed in the second shielding member 36-2 away from the fourth position PG-4 and the second opening 36-2a. As a result, the second auxiliary anode 34-2 is exposed from the second opening 36-2a and the third opening 36-2b, and an electric field is supplied to the substrate WF via the second opening 36-2a and the third opening 36-2b. Note that the second opening 36-2a and the third opening 36-2b are not integrated, and the second shielding member 36-2 exists between the second opening 36-2a and the third opening 36-2b.

The second electric field supply member 37 also includes a second membrane 38-2 and a third membrane 38-3 arranged in the second opening 36-2a and the third opening 36-2b, respectively. The second membrane 38-2 and the third membrane 38-3 are diaphragms such as ion exchange membranes. In this embodiment, the second auxiliary anode 34-2 arranged inside the second groove 32-2 is covered with the second shielding member 36-2, and the second opening 36-2a and the third opening 36-2b are formed in the second shielding member 36-2 to define the area where the auxiliary anode effect occurs, but this is not limited to this example. For example, an auxiliary anode of a size equivalent to the second opening 36-2a and the third opening 36-2b may be arranged in the place where the second opening 36-2a and the third opening 36-2b are formed. This allows the second electric field supplying member 37 to supply an electric field to the pair away from the third position PG-3 and the fourth position PG-4.

Figure 6 is a diagram showing the schematic configuration of the intermediate masks of Comparative Examples 1 and 2. In the intermediate mask of Comparative Example 1 shown in Figure 6 (a), the first side member 31 is provided with a first electric field supply member 35, as in this embodiment. On the other hand, in the second side member 33, no opening is formed in the second shielding member 36-2, and no auxiliary anode is provided.

In the intermediate mask of Comparative Example 2 shown in Figure 6(b), the first side member 31 is provided with a first electric field supply member 35, as in this embodiment. Meanwhile, in the second side member 33, a pair of openings 36-2a, 36-2b are formed in the second shielding member 36-2, and these openings are in contact with the third position PG-3 and the fourth position PG-4, respectively.

Figure 7 shows the plating film thickness distribution using an intermediate mask of one embodiment and an intermediate mask of a comparative example. Figure 7 shows the plating film thickness profile from the center (A) to the end (B) of the substrate WF. In the graph of Figure 7, the vertical axis shows the normalized plating film thickness, and the horizontal axis shows the measurement position of the plating film thickness from the center (A) to the end (B) of the substrate WF.

7, in Comparative Example 1, since there is no auxiliary anode in the second side member 33, the plating thickness is thin at the portion inward from the end of the substrate WF (area surrounded by dashed line α). In Comparative Example 2, the openings 36-2a and 36-2b formed in the second shielding member 36-2 are in contact with the third position PG-3 and the fourth position PG-4, so that the electric field is concentrated at the corners of the substrate WF, and as a result, the plating thickness at the end of the substrate WF (area surrounded by dashed line β) becomes too thick. In contrast, in this embodiment, the second opening 36-2a and the third opening 36-2b are formed away from the third position PG-3 and the fourth position PG-4. As a result, the electric field concentration at the corners of the substrate WF is suppressed, and the electric field can be supplied to the portion inward from the end of the substrate WF, thereby improving the uniformity of the plating thickness distribution.

Figure 8 shows the results of comparing the uniformity of the plating film thickness distribution using an intermediate mask of one embodiment and an intermediate mask of a comparative example. In the graph of Figure 8, the vertical axis shows the variation in the normalized plating film thickness distribution. As shown in Figure 8, when the intermediate mask 30 of this embodiment is adopted, the variation in the plating film thickness distribution can be suppressed compared to Comparative Examples 1 and 2.

Note that the manner in which the second opening 36-2a and the third opening 36-2b are formed shown in Figure 3 is merely one example. The second opening 36-2a and the third opening 36-2b can be formed in various manners as described below.

Figure 9 is a diagram showing a schematic configuration of an intermediate mask of another embodiment. As shown in Figures 9(a), (b), and (c), the second electric field supply member 37 has four regions (first region (1) to fourth region (4)) obtained by dividing the area from the third position PG-3 to the fourth position PG-4 into four equal parts. The second opening 36-2a may be formed in the second shielding member 36-2 in the first region (1) away from the third position PG-3. The third opening 36-2b may be formed in the second shielding member 36-2 in the fourth region (4) away from the fourth position PG-4.

3 shows an example in which the second opening 36-2a and the third opening 36-2b are formed on the distal side 36-2c of the second shielding member 36-2, which is away from the second central opening 30a, but this is only one example. As shown in FIG. 9(a), the second opening 36-2a and the third opening 36-2b may be formed on the proximal side 36-2d of the second shielding member 36-2, which is closer to the second central opening 30a.

9(b), the second opening 36-2a may be formed across the first region (1) and the second region (2) as long as it is formed away from the third position PG-3 in at least the first region (1). The third opening 36-2b may be formed across the third region (3) and the fourth region (4) as long as it is formed away from the fourth position PG-4 in at least the fourth region (4). Furthermore, the second opening 36-2a and the third opening 36-2b may be formed between the distal edge 36-2c and the proximal edge 36-2d of the second shielding member 36-2.

Furthermore, as shown in FIG. 9(c), the second opening 36-2a and the third opening 36-2b may be formed so that the size (AA) in the direction along the second side member 33 is smaller than the size (BB) of the second shielding member 36-2 between the second opening 36-2a and the third opening 36-2b in the direction along the second side member 33 (so that AA<BB).

That is, if the size of the second opening 36-2a and the third opening 36-2b in the direction along the second side member 33 is too large, an excessive electric field may be supplied to the center of the substrate WF, compromising the uniformity of the plating film thickness distribution. In contrast, by arranging the second shielding member 36-2 of an appropriate size between the second opening 36-2a and the third opening 36-2b, it is possible to prevent an excessive electric field from being supplied to the center of the substrate WF, thereby improving the uniformity of the plating film thickness distribution.

Although several embodiments of the present invention have been described above, the above-mentioned embodiments of the invention are intended to facilitate understanding of the present invention and do not limit the present invention. The present invention may be modified or improved without departing from its spirit, and the present invention naturally includes equivalents. Furthermore, any combination or omission of each component described in the claims and specification is possible within the scope of solving at least part of the above-mentioned problems or achieving at least part of the effects.

In one embodiment, the present application relates to a plating tank for containing a plating solution, an anode disposed in the plating tank, and a substrate holder for holding a rectangular substrate such that the surface to be plated faces the anode, the substrate holder having a power supply side member that supplies power to a pair of opposing sides of the rectangular substrate and a non-power supply side member that does not supply power to the other pair of opposing sides of the rectangular substrate; an anode mask disposed between the anode and the substrate holder and having a rectangular first central opening penetrating the anode side and the substrate holder side; and an intermediate mask disposed between the anode mask and the substrate holder and having a rectangular second central opening penetrating the anode side and the substrate holder side, the intermediate mask having a pair of first side members disposed opposite the power supply side members of the substrate holder and a pair of non-power supply side members of the substrate holder. The present invention discloses a plating apparatus including a pair of second side members arranged opposite to each other, a first electric field supply member arranged on a surface of each of the pair of first side members facing the substrate holder for supplying an electric field, and a second electric field supply member arranged on a surface of each of the pair of second side members facing the substrate holder for supplying an electric field, wherein the first electric field supply member is configured to extend along the first side members between a first position on an extension of a first side of the rectangular second central opening and a second position on an extension of a second side opposite to the first side, and the second electric field supply member is configured to supply an electric field to the pair between a third position on an extension of a third side of the rectangular second central opening and a fourth position on an extension of a fourth side opposite to the third side, away from the third position and the fourth position.

Furthermore, the present application discloses, as one embodiment, a plating apparatus in which the first electric field supply member includes a first groove extending from the first position to the second position, a first auxiliary anode disposed inside the first groove, a first shielding member disposed in the first groove to shield the first auxiliary anode, and a first opening formed in the first shielding member from the first position to the second position, and the second electric field supply member includes a second groove extending from the third position to the fourth position, a second auxiliary anode disposed inside the second groove, a second shielding member disposed in the second groove to shield the second auxiliary anode, a second opening formed in the second shielding member away from the third position, and a third opening formed in the second shielding member away from the fourth position and the second opening.

Furthermore, as one embodiment, the present application discloses a plating apparatus in which the first electric field supplying member further includes a first membrane disposed in the first opening, and the second electric field supplying member further includes a second membrane and a third membrane disposed in the second opening and the third opening, respectively.

Furthermore, the present application discloses, as one embodiment, a plating apparatus in which the second electric field supply member has a first region to a fourth region that divide the area from the third position to the fourth position into four equal regions, the second opening is formed in the second shielding member in the first region away from the third position, and the third opening is formed in the second shielding member in the fourth region away from the fourth position.

Furthermore, as one embodiment, the present application discloses a plating apparatus in which the second opening and the third opening are formed so that the size in the direction along the second side member is smaller than the size in the direction along the second side member of the second shielding member between the second opening and the third opening.

10 Plating apparatus 21 Anode 30 Intermediate mask 30a Second central opening 30a-1 First side 30a-2 Second side 30a-3 Third side 30a-4 Fourth side 31 First side member 32-1 First groove 32-2 Second groove 33 Second side member 34-1 First auxiliary anode 34-2 Second auxiliary anode 35 First electric field supply member 36-1 First shielding member 36-1a First opening 36-2 Second shielding member 36-2a Second opening 36-2b Third opening 37 Second electric field supply member 38-1 First membrane 38-2 Second membrane 38-3 Third membrane 40 Substrate holder 42 Power supply side member 44 Non-power supply side member 50 Plating tank 70 Anode mask 70a First central opening PG-1 First position PG-2 Second position PG-3 Third position PG-4 Fourth position Q Plating solution WF Substrate WF1 Surface to be plated

Claims (5)

A plating tank for containing a plating solution;
an anode disposed in the plating tank;
a substrate holder for holding a rectangular substrate such that a surface to be plated faces the anode, the substrate holder being configured to supply power to a pair of opposing sides of the rectangular substrate when holding the rectangular substrate, and configured not to supply power to another pair of opposing sides of the rectangular substrate;
an anode mask disposed between the anode and the substrate holder, the anode mask having a rectangular first central opening extending through the anode side and the substrate holder side;
an intermediate mask disposed between the anode mask and the substrate holder, the intermediate mask having a rectangular second central opening extending through the anode side and the substrate holder side;
Including,
the intermediate mask includes a pair of first side members arranged opposite a pair of opposing sides of the substrate holder to which power is supplied , a pair of second side members arranged opposite a pair of other sides of the substrate holder to which power is not supplied , a first electric field supplying member arranged on a surface of each of the pair of first side members facing the substrate holder, and a second electric field supplying member arranged on a surface of each of the pair of second side members facing the substrate holder,
the first electric field supplying member is configured to extend along the first side member between a first position on an extension of a first side defined on one of the second side members of the rectangular second central opening and a second position on an extension of a second side opposite to the first side;
the second electric field supplying member is configured to supply an electric field to a pair of positions between a third position on an extension of a third side defined in one of the first side members of the rectangular second central opening and a fourth position on an extension of a fourth side opposite to the third side, the pair being spaced apart from the third position and the fourth position.
Plating equipment. the first electric field supplying member includes a first groove extending from the first position to the second position, a first auxiliary anode disposed within the first groove, a first shielding member disposed in the first groove to shield the first auxiliary anode, and a first opening formed in the first shielding member from the first position to the second position;
the second electric field supplying member includes a second groove extending from the third position to the fourth position, a second auxiliary anode disposed within the second groove, a second shielding member disposed in the second groove to shield the second auxiliary anode, a second opening formed in the second shielding member away from the third position, and a third opening formed in the second shielding member away from the fourth position and the second opening.
2. The plating apparatus according to claim 1. the first electric field supplying member further includes a first membrane disposed in the first opening;
the second electric field supplying member further includes a second membrane and a third membrane disposed in the second opening and the third opening, respectively;
3. The plating apparatus according to claim 2. the second electric field supplying member has a first region to a fourth region that are equal to four regions that are obtained by dividing the area from the third position to the fourth position,
the second opening is formed in the second shielding member in the first region away from the third position;
the third opening is formed in the second shielding member in the fourth region away from the fourth position;
4. The plating apparatus according to claim 2 or 3. the second opening and the third opening are formed so that a size in a direction along the second side member is smaller than a size in a direction along the second side member of the second shielding member between the second opening and the third opening.
5. The plating apparatus according to claim 4.