TW202348841A - plating device - Google Patents

Abstract

The present invention provides a technology that can suppress uneven film thickness at the outer periphery of a substrate. The plating device 1 includes: a plating tank; an anode; a substrate holder; at least one auxiliary anode 60a-60d; the bus bar 61 has a feed portion 62 for supplying power and a plurality of connection portions 63 connected to at least one auxiliary anode and arranged in the extending direction of the auxiliary anode; and at least one ion resistance 80a-80d. The ion resistor is constructed in such a way that the resistivity of the ion resistor becomes higher the closer it extends to the feed portion.

Description

plating device

The present invention relates to a plating device.

In the past, a plating device for plating a substrate has been known to include: a plating tank that stores a plating liquid; an anode arranged inside the plating tank; and a substrate that can be arranged inside the plating tank opposite to the anode. a substrate holder; and at least one auxiliary anode (auxiliary electrode) arranged between the anode and the substrate inside the plating tank and extending along the outer periphery of the substrate (for example, see Patent Document 1). [Prior technical literature] [Patent Document]

[Patent Document 1] Japanese Patent Application Publication No. 2021-11624

(Invent the problem you want to solve)

As described above, in the conventional plating apparatus, a bus bar is used to supply electricity to the auxiliary anode. Specifically, the bus bar has: a feed portion for supplying electricity; and a plurality of connection portions connected to the auxiliary anode and arranged in the extending direction of the auxiliary anode; and the electricity supplied to the feed portion is transmitted through the connection portion. It is constructed by flowing into the auxiliary anode.

For example, in the above-mentioned plating device, the resistance value of the connection part of the bus bar is smaller as it is closer to the feed part. Therefore, during the plating process, the amount of electricity flowing from the bus bar to the auxiliary anode tends to increase as it approaches the power feeding portion. In this case, when the substrate is plated, the film thickness on the outer periphery of the substrate may be uneven.

In view of the above-mentioned circumstances, one of the objects of the present invention is to provide a technology that can suppress uneven film thickness at the outer periphery of a substrate. (a means of solving problems) (Pattern 1)

In order to achieve the above object, a plating device according to one aspect of the present invention includes: a plating tank storing a plating liquid; an anode arranged inside the plating tank; and a substrate holder arranged in the plating tank. The inside of the tank is configured so that a substrate can be arranged opposite the anode; at least one auxiliary anode is arranged between the anode and the substrate inside the plating tank and extends along the outer periphery of the substrate ; The bus bar has: a feed portion for supplying electricity, and a plurality of connection portions connected to at least one of the aforementioned auxiliary anodes and arranged in the extending direction of the auxiliary anode, and for supplying electricity to the aforementioned feed portion; The auxiliary anode is formed by flowing into the auxiliary anode through the connection part; and at least one ion resistor is arranged between the auxiliary anode and the substrate inside the plating tank and extends along the auxiliary anode; The ion resistor is configured such that the resistivity of the ion resistor becomes higher as the extending direction of the ion resistor approaches the feeding point.

When this aspect is adopted, the resistance value of the connecting part of the bus bar becomes smaller as it is closer to the feeding part, causing uneven film thickness on the outer periphery of the substrate. (Pattern 2)

In the above aspect 1, the ion resistor may also have a plurality of openings. The opening ratio of the ion resistor is lower as the extension direction of the ion resistor is closer to the feeding part, so that the resistivity of the ion resistor is within The closer the extending direction of the ion resistance is to the feeding part, the higher it is. (Pattern 3)

In the above aspect 1, it is also possible to make the resistivity of the ion resistor closer to the above-described thickness in the extending direction of the ion resistor by making the thickness of the ion resistor thicker as the extending direction of the ion resistor approaches the feeding part. The higher the feed position is. (Pattern 4)

In any one of the above-mentioned aspects 1 to 3, the bus bar may have a connection part that connects the feed part and the connection part, and the connection part has a plurality of extension parts along the edge of the substrate. Extending from the outer periphery, a plurality of the extension parts are arranged in a frame shape, at least one of the auxiliary anodes includes a plurality of the auxiliary anodes, and each of the auxiliary anodes is connected to each of the extension parts through a plurality of the connection parts. (Pattern 5)

Any one of the above-mentioned aspects 1 to 4 may also be provided with a receiving portion, which stores at least one of the aforementioned auxiliary anodes inside. The aforementioned receiving portion is provided with an opening facing the direction of the aforementioned substrate, and the aforementioned opening of the aforementioned receiving portion allows The metal ions contained in the plating solution pass through, and are blocked by a separator that inhibits the passage of oxygen generated from the surface of the auxiliary anode. (Pattern 6)

In order to achieve the above object, a plating device according to one aspect of the present invention includes: a plating tank storing a plating liquid; an anode arranged inside the plating tank; and a substrate holder arranged in the plating tank. The inside of the tank is configured so that a substrate can be arranged opposite the anode; at least one auxiliary anode is arranged between the anode and the substrate inside the plating tank and extends along the outer periphery of the substrate ; and a bus bar, which has: a feed portion for supplying electricity, and a plurality of connection portions connected to at least one of the aforementioned auxiliary anodes and arranged in the extending direction of the auxiliary anode, so as to supply power to the aforementioned feed portion Electricity flows into the auxiliary anode through the connecting portion; the auxiliary anode is configured such that the distance between the auxiliary anode and the substrate becomes larger as the extension direction of the auxiliary anode approaches the feeding portion.

When this aspect is adopted, the resistance value of the connecting part of the bus bar becomes smaller as it is closer to the feeding part, causing uneven film thickness on the outer periphery of the substrate.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in the following various embodiments, the same or corresponding components are denoted by the same reference numerals, and descriptions thereof will be omitted as appropriate. In addition, the drawings are schematically shown for easy understanding of the characteristics of the embodiments, and the dimensional ratios of each component may not be the same as the actual ones. Some drawings show the X-Y-Z orthogonal coordinates as a reference. In this orthogonal coordinate, the Z direction corresponds to the upward direction, and the -Z direction corresponds to the downward direction (the direction of gravity).

FIG. 1 is an overall layout diagram of the plating device 1 of this embodiment. As illustrated in FIG. 1 , the plating apparatus 1 of this embodiment includes: two cassette stages 102; an aligner 104 for aligning the orientation plane and grooves of the substrate Wf in a specified direction; and a plating process. The spin rinse dryer 106 then spins and dries the substrate Wf at high speed. The cassette stage 102 is equipped with a cassette 100 that accommodates a substrate Wf such as a semiconductor wafer. A loading/unloading station 120 is provided near the spin rinse dryer 106 for loading the substrate holder 20 and loading and unloading the substrate Wf. The transfer robot 122 is a robot used to transfer the substrate Wf between the cassette 100 , the aligner 104 , the spin rinse dryer 106 , and the loading/unloading station 120 .

The loading/unloading station 120 is provided with a flat loading plate 152 that is slidable in the lateral direction along the rail 150. Two substrate holders 20 are loaded side by side on the loading plate 152 in a horizontal state. After the substrate Wf is transferred between one substrate holder 20 and the transfer robot 122 , the loading plate 152 slides in the lateral direction, and the substrate Wf is transferred between the other substrate holder 20 and the transfer robot 122 .

In addition, the plating device 1 includes: a temporary storage box 124, a pre-wet module 126, a prepreg module 128, a first rinse module 130a, an air jet module 132, a second rinse module 130b, and a plating module 110. The conveying device 140 and the control module 170. The temporary storage box 124 stores and temporarily places the substrate holder 20 . The prewet module 126 immerses the substrate Wf in pure water. The prepreg module 128 is etched to remove the oxide film formed on the surface of the conductive layer such as the seed layer on the surface of the substrate Wf. The first cleaning module 130a, together with the substrate holder 20, uses cleaning liquid (pure water, etc.) to clean the pre-soaked substrate Wf. The air jet module 132 removes liquid from the cleaned substrate Wf. The second cleaning module 130b, together with the substrate holder 20, uses cleaning fluid to clean the plated substrate Wf.

The plating module 110 is configured, for example, to house a plurality of plating tanks 10 inside the overflow tank 136 . Each plating tank 10 accommodates one substrate Wf inside, immerses the substrate Wf in the plating liquid held inside, and performs copper plating or the like on the surface of the substrate Wf.

The conveying device 140 is a linear motor type conveying device that conveys the substrate holder 20 together with the substrate Wf between the various devices constituting the plating device 1 . An example of the conveying device 140 of this embodiment includes a first conveying device 142 and a second conveying device 144 . The first transport device 142 transports the substrate Wf between the loading/unloading station 120, the temporary storage box 124, the pre-wet module 126, the prepreg module 128, the first rinse module 130a, and the air jet module 132. The second transport device 144 transports the substrate Wf between the first rinse module 130a, the second rinse module 130b, the air jet module 132, and the plating module 110. In addition, the plating apparatus 1 may not be provided with the 2nd conveyance device 144, but may be provided with only the 1st conveyance device 142.

A blade driving part 160 and a blade driven part 162 are arranged on both sides of the overflow tank 136 and are located inside each plating tank 10 to drive a blade that stirs the plating liquid in the plating tank 10 .

The control module 170 is configured to control the operation of the plating device 1 . Specifically, the control module 170 of this embodiment includes a microcomputer including a CPU (Central Processing Unit) 171 as a processor, a memory device 172 as a permanent storage medium, and the like. The control module 170 controls the controlled part of the plating device 1 by operating the CPU 171 according to the instructions of the program stored in the memory device 172 .

An example of a series of plating processes performed by the plating device 1 will be described below. First, the transfer robot 122 takes out one substrate Wf from the cassette 100 mounted on the cassette stage 102, and transfers the substrate Wf to the aligner 104. The aligner 104 aligns the position of the orientation plane, the groove, etc. in the specified direction. The substrate Wf positioned in the specified direction is then transported to the loading/unloading station 120 by the transport robot 122 .

In the loading/unloading station 120 , the first conveying device 142 of the conveying device 140 holds two substrate holders 20 stored in the temporary storage box 124 at the same time, and transports them to the loading/unloading station 120 . Then, the two substrate holders 20 are horizontally loaded on the loading plate 152 of the loading/unloading station 120 at the same time. In this state, the transfer robot 122 transfers the substrate Wf to each substrate holder 20 and holds the transferred substrate Wf with the substrate holder 20 .

Next, the first conveying device 142 of the conveying device 140 holds two substrate holders 20 holding the substrate Wf simultaneously, and stores them in the premoistening module 126 . Next, the substrate holder 20 holding the substrate Wf processed by the prewet module 126 is transported to the prepreg module 128 by the first transport device 142, and the prepreg module 128 is used to etch the oxide film on the substrate Wf. Then, the substrate holder 20 holding the substrate Wf is transported to the first rinsing module 130a, and the surface of the substrate Wf is cleaned with pure water contained in the first rinsing module 130a.

The substrate holder 20 holding the cleaned substrate Wf is transported from the first rinse module 130 a to the plating module 110 by the second transport device 144 , and is stored in the plating tank 10 . The second transport device 144 sequentially repeats the above steps, and sequentially stores the substrate holder 20 holding the substrate Wf into each plating tank 10 of the plating module 110 .

Each plating tank 10 applies a plating voltage between the anode in the plating tank 10 and the substrate Wf, and performs plating treatment on the surface of the substrate Wf. During the plating process, the paddle driving part 160 and the paddle driven part 162 may also be used to drive the paddle to stir the plating liquid in the plating tank 10 . However, the structure of the plating device 1 is not limited to this. For example, the plating device 1 may be configured without the blades, the blade driving part 160 and the blade driven part 162 .

After the plating process, the second transport device 144 simultaneously holds two substrate holders 20 holding the plated substrate Wf, and transports them to the second rinse module 130b to immerse them in the second rinse module 130b. The pure water in the module 130b is used to clean the surface of the substrate Wf with pure water. Next, the substrate holder 20 is transported to the air blow module 132 by the second transport device 144, and the water droplets attached to the substrate holder 20 are removed by blowing air or the like. Then, the substrate holder 20 is transported to the loading/unloading station 120 by the first transporting device 142 .

The loading/unloading station 120 uses the transfer robot 122 to take out the processed substrate Wf from the substrate holder 20 and transfer it to the spin rinse dryer 106 . The spin rinse dryer 106 dries the plated substrate Wf by rotating it at high speed. The dried substrate Wf is returned to the cassette 100 by the transport robot 122 .

In addition, the structure of the plating device 1 illustrated in FIG. 1 is one embodiment of the present invention, and the structure of the plating device 1 is not limited to the structure of FIG. 1 .

Next, the peripheral structure of the plating tank 10 in the plating device 1 will be described in detail. In addition, since the plurality of plating tanks 10 in this embodiment have the same structure, the peripheral structure of one plating tank 10 will be described.

FIG. 2 is a schematic cross-sectional view showing the peripheral configuration of one plating tank 10 in the plating device 1 according to the first embodiment. An example of the plating apparatus 1 illustrated in FIG. 2 is a plating apparatus in which the surface direction of the substrate Wf (the direction along the surface) is set in the up-down direction and the substrate Wf is immersed in the plating liquid Ps (that is, a immersion type plating device). cover device).

However, the specific embodiment of the plating device 1 is not limited to this. For example, the plating device 1 may be a plating device (that is, a cup-type plating device) in which the surface direction of the substrate Wf is set in a horizontal direction and the substrate Wf is immersed in the plating liquid Ps.

As illustrated in FIG. 2 , the plating tank 10 may also be configured as a bottomed container with an opening at the upper part. The plating liquid Ps is stored inside the plating tank 10 . The plating solution Ps only needs to be a solution containing ions of metal elements constituting the plating film, and specific examples thereof are not particularly limited. In this embodiment, one example of the plating treatment is copper plating treatment, and another example of the plating solution Ps is a copper sulfate solution.

The plating device 1 includes an anode 30 inside the plating tank 10 . The anode 30 is electrically connected to the power source. The specific type of anode 30 is not particularly limited. It may be an insoluble anode or a soluble anode. As an example of the anode 30 of this embodiment, an insoluble anode is used. The specific type of the insoluble anode is not particularly limited, and platinum, iridium oxide, etc. can be used.

As shown in FIG. 2 , the plating device 1 may also include an anode box 40 , a diaphragm 50 , and an anode shield 45 inside the plating tank 10 . The anode box 40 is a member (accommodating member) for accommodating the anode 30 inside. An opening 40a is provided in a portion of the anode box 40 facing the substrate Wf. The diaphragm 50 is provided to block the opening 40a. The plating liquid Ps is stored inside the anode box 40 .

The separator 50 is constituted by a film that allows metal ions (for example, copper ions in copper sulfate) contained in the plating solution Ps to pass through and suppresses the passage of oxygen generated from the surface of the anode 30 . For example, a neutral separator can be used as the separator 50 .

In this embodiment, as described above, the anode 30 is housed inside the anode case 40 and the opening 40 a of the anode case 40 is blocked by the separator 50 . Therefore, even if oxygen is generated from the surface of the anode 30 during the plating process, The generated oxygen can be suppressed from invading the plating solution Ps outside the anode box 40 . This can prevent the plating quality of the substrate Wf from deteriorating due to oxygen intruding into the plating solution Ps outside the anode box 40 .

The anode mask 45 is arranged between the anode 30 and the substrate Wf. Specifically, the anode mask 45 of this embodiment is arranged inside the anode box 40 . The anode shield 45 has a hole 45 a in the center of the anode shield 45 through which ions and the like moving between the anode 30 and the substrate Wf can pass.

The substrate holder 20 is a member for holding the substrate Wf serving as the cathode. The substrate holder 20 is configured to face the anode 30 inside the plating tank 10 so that the substrate Wf can be disposed. Specifically, when the substrate Wf is subjected to a plating process, the substrate holder 20 holds the substrate Wf such that the surface of the substrate Wf faces the anode 30 . More specifically, the substrate holder 20 of this embodiment holds the substrate Wf so that the surface direction of the substrate Wf forms an up-down direction. A plating film is formed on the surface to be plated (the surface facing the anode 30 ) of the substrate Wf by the plating process.

Fig. 3 is a schematic front view of the substrate Wf. Specifically, FIG. 3 illustrates a state in which the substrate Wf is identified from the normal direction of the plated surface of the substrate Wf. The specific shape of the substrate Wf is not particularly limited, but as shown in FIG. 3 , it may also be an angular substrate with multiple sides. The number of sides of the substrate Wf is not particularly limited, and may be 3, 4, or 5 or more.

An example of the number of sides of the substrate Wf in this embodiment is four. That is, the substrate Wf of this embodiment is a square substrate having sides 90a, 90b, 90c, and 90d. The side 90a and the side 90b are opposite to each other, and the side 90c and the side 90d are opposite to each other. A corner 91a is provided between the side 90a and the side 90c, a corner 91b is provided between the side 90a and the side 90d, a corner 91c is provided between the side 90b and the side 90d, and a corner 91c is provided between the side 90b and the side 90c. Corner portion 91d is provided.

In addition, as an example, the lengths of the respective sides of the substrate Wf in this embodiment are equal to each other. That is, the substrate Wf of this embodiment has a square shape when viewed from the front. However, the structure of the substrate Wf is not limited to this. For example, the lengths of the respective sides of the substrate Wf may also be different from each other.

Furthermore, in this embodiment, power is supplied to the substrate Wf from each side of the substrate Wf. Specifically, in the substrate Wf of this embodiment, electricity is supplied from each side of the substrate Wf through contact members (not shown). However, the invention is not limited to this structure. For example, the electricity supplied to the substrate Wf may be supplied from two opposite sides of the substrate Wf.

Referring again to FIG. 2 , the plating device 1 of this embodiment includes at least one auxiliary anode inside the plating tank 10 . That is, the plating apparatus 1 may be provided with only one auxiliary anode, or may be provided with a plurality of auxiliary anodes. An example of the plating apparatus 1 of this embodiment includes a plurality of auxiliary anodes (auxiliary anodes 60a, 60b, 60c, and 60d).

The auxiliary anodes 60a to 60d are arranged in a portion between the anode 30 and the substrate Wf inside the plating tank 10. Specifically, the auxiliary anodes 60a to 60d illustrated in FIG. 2 are arranged between the substrate Wf and the intermediate mask 70 described below. In addition, the auxiliary anodes 60a to 60d of this embodiment are accommodated inside the accommodation part 71 which will be described later.

The specific types of the auxiliary anodes 60a to 60d are not particularly limited. They may be insoluble anodes or soluble anodes. As an example of the auxiliary anodes 60a to 60d of this embodiment, an insoluble anode is used. The specific type of the insoluble anode is not particularly limited, and various metals such as platinum, iridium oxide, and titanium can be used. An example of the auxiliary anodes 60a to 60d in this embodiment is composed of plate-shaped titanium, and the surface of the titanium is coated with iridium oxide.

Referring again to FIG. 2 , the plating device 1 includes an intermediate mask 70 and a diaphragm 51 . FIG. 4 is a schematic perspective view of the peripheral structure of the intermediate mask 70 . Referring to FIGS. 2 and 4 , the intermediate mask 70 is disposed between the anode 30 and the substrate Wf. Specifically, the intermediate mask 70 of this embodiment is disposed between the anode box 40 and the substrate Wf. The middle mask 70 has an ion movable hole 70a in the center.

In this embodiment, an example of the hole 70a of the intermediate mask 70 is a polygonal hole, and has a plurality of sides (sides 72a, 72b, 72c, 72d) respectively corresponding to a plurality of sides of the substrate Wf. Specifically, the side 72a corresponds to the side 90a of the substrate Wf, the side 72b corresponds to the side 90b of the substrate Wf, the side 72c corresponds to the side 90c of the substrate Wf, and the side 72d corresponds to the side 90d of the substrate Wf. In addition, the side 72a extends in the extending direction of the side 90a, the side 72b extends in the extending direction of the side 90b, the side 72c extends in the extending direction of the side 90c, and the side 72d extends in the extending direction of the side 90d.

In this embodiment, a receiving portion 71 for accommodating the auxiliary anodes 60a to 60d is provided on the surface of the intermediate mask 70 facing the substrate Wf. The accommodating portion 71 has an opening 71a that opens toward the substrate Wf.

The diaphragm 51 blocks the opening 71a of the receiving part 71. The plating liquid Ps is stored inside the accommodating part 71 . The diaphragm 51 can be the same as the diaphragm 50 mentioned above. That is, the separator 51 of this embodiment is configured to allow metal ions (for example, copper ions in copper sulfate) contained in the plating solution Ps to pass through, and to inhibit the passage of oxygen generated from the surface of the auxiliary anode through the membrane. For example, a neutral separator can be used as the separator 51 .

In this embodiment, as described above, the auxiliary anodes 60a to 60d are accommodated in the accommodating portion 71, and the opening 71a of the accommodating portion 71 is blocked by the diaphragm 51. Therefore, even during the plating process, the auxiliary anodes 60a to 60d are received. Even when oxygen is generated on the surface of 60d, the generated oxygen can still be suppressed from intruding into the plating liquid Ps outside the accommodating portion 71. This can prevent the plating quality of the substrate Wf from deteriorating due to oxygen intruding into the plating liquid Ps outside the housing portion 71 .

Referring to FIG. 2 , the plating device 1 of this embodiment includes a bus bar 61 and at least one ion resistor inside the plating tank 10 . An example of the plating apparatus 1 of this embodiment is provided with a plurality of ion resistors (ion resistors 80a, 80b, 80c, and 80d).

FIG. 5 is a schematic front view of the bus bar 61 and the auxiliary anodes 60a to 60d. In addition, the substrate Wf is also shown as a two-point chain line in FIG. 5 as a reference. In addition, in FIG. 5 , the direction of current flow (that is, the current direction) is exemplified by “I”. Fig. 6 is a schematic front view of the ion resistors 80a to 80d. In addition, in FIG. 6 , the bus bar 61 and the auxiliary anodes 60 a to 60 d are also shown as a two-point chain line for reference. FIG. 7 is a schematic side view of the peripheral structure of the auxiliary anode 60a.

As illustrated in FIG. 5 , the number of auxiliary anodes 60 a to 60 d in this embodiment is consistent with the number of sides of the substrate Wf. In addition, the auxiliary anodes 60a to 60d are arranged to surround the designated space area A1. Specifically, the auxiliary anodes 60a to 60d of this embodiment are arranged to surround the outer periphery of the substrate Wf when viewed from the normal direction of the plated surface of the substrate Wf. In addition, in this embodiment, the space region A1 refers to a region toward the anode 30 side with respect to the substrate Wf and toward the substrate Wf side with respect to the anode 30 .

The auxiliary anodes 60a to 60d extend along the outer peripheral edge of the substrate Wf. Specifically, the auxiliary anodes 60a to 60d of this embodiment are arranged corresponding to the respective sides of the substrate Wf, and extend in the extending direction of the respective sides of the substrate Wf.

More specifically, as illustrated in FIG. 5 , the auxiliary anode 60 a corresponds to the side 90 a of the substrate Wf and extends in the extending direction (Y direction) of the side 90 a. The auxiliary anode 60b corresponds to the side 90b and extends in the extending direction of the side 90b (Y direction). The auxiliary anode 60c corresponds to the side 90c and extends in the extending direction of the side 90c (Z direction). The auxiliary anode 60d corresponds to the side 90d and extends in the extending direction of the side 90d (Z direction).

Referring to FIG. 5 , the bus bar 61 is a member for supplying electricity to the auxiliary anodes 60 a to 60 d. The specific structure of the bus bar 61 is not particularly limited. However, the bus bar 61 in this embodiment is made of a material with good electrical conductivity such as titanium. In addition, an example of the bus bar 61 in this embodiment is composed of a flat member. In addition, in order to effectively suppress corrosion caused by the plating liquid Ps, the surface of the bus bar 61 can also be coated with a coating material.

The bus bar 61 of this embodiment includes a power feeding portion 62, a plurality of connecting portions 63, and a connecting portion 64. The power feeding portion 62 is electrically connected to the power supply 200 and is configured to supply power from the power supply 200 .

Referring to FIGS. 5 and 7 , the connection portion 63 is a portion connected to the auxiliary anodes 60 a to 60 d (that is, the connection support (Boss)). Specifically, the connection portion 63 of this embodiment is formed in a protrusion shape, and connects the auxiliary anodes 60a to 60d to the extension portions 66a to 66d of the connection portion 64 described below. In FIG. 5 , the plurality of connection sites 63 are numbered #1 to #12. As illustrated in FIG. 5 , a plurality of connection portions 63 are arranged at intervals in the extending direction of the auxiliary anodes 60 a to 60 d between adjacent connection portions 63 .

The connection portion 64 is a portion configured to connect the power feeding portion 62 and the connection portion 63 . As illustrated in FIG. 5 , the connecting portion 64 of this embodiment includes an introduction portion 65 and extension portions 66a to 66d. The introduction portion 65 is a portion configured to connect the extension portions 66a to 66d and the power feeding portion 62, and to introduce electricity from the power feeding portion 62 into the extension portions 66a to 66d.

The extension portions 66a to 66d extend along the auxiliary anodes 60a to 60d. Specifically, the extension portion 66a extends in the extension direction of the auxiliary anode 60a, the extension portion 66b extends in the extension direction of the auxiliary anode 60b, the extension portion 66c extends in the extension direction of the auxiliary anode 60c, and the extension portion 66d extends in the extension direction of the auxiliary anode 60d. extend.

The extension portion 66a and the extension portion 66d are electrically connected in series. The extension portion 66c and the extension portion 66b are electrically connected in series. Moreover, the extension parts 66a and 66d and the extension parts 66c and 66b are electrically connected in parallel. Therefore, the auxiliary anode 60a and the auxiliary anode 60c are arranged in an electrical parallel connection, and the auxiliary anode 60d and the auxiliary anode 60b are arranged in an electrical parallel connection.

In addition, the extension portions 66a to 66d are arranged so as to surround the designated space area A1. Specifically, the extending portions 66a to 66d of this embodiment are arranged to surround the outer peripheral edge of the substrate Wf when viewed from the normal direction of the plated surface of the substrate Wf. In addition, the extension portions 66a to 66d of this embodiment are connected to each other and arranged in a frame shape. Specifically, an example of the extending portions 66 a to 66 d in this embodiment is a polygonal (an example in this embodiment is a square) frame shape.

Each of the auxiliary anodes 60a to 60d is connected to the respective extension portions 66a to 66d via a plurality of connection portions 63. Specifically, the auxiliary anode 60a is connected to the extension portion 66a via the connection portions 63 of #1 to #3. The auxiliary anode 60b is connected to the extension portion 66b via the connection portions 63 of #10 to #12. The auxiliary anode 60c is connected to the extension portion 66c via the connection portions 63 of #7 to #9. The auxiliary anode 60d is connected to the extension portion 66d via the connection portions 63 of #4 to #6.

The electricity supplied from the power supply 200 to the bus bar 61 via the power feeding part 62 flows through the connection part 64 and then flows through the connection part 63 and is supplied to the auxiliary anodes 60a to 60d. Specifically, the electricity supplied to the feeding part 62 flows through the introduction part 65 of the connection part 64 and then flows into the extension part 66a and the extension part 66c of the connection part 64 respectively. The electricity flowing through the extension part 66a flows through the extension part 66d, and the electricity flowing through the extension part 66c flows through the extension part 66b. The electricity in the extension portion 66a flows into the auxiliary anode 60a via the connection portion 63, and the electricity in the extension portion 66b flows into the auxiliary anode 60b via the connection portion 63. The electricity in the extension portion 66c flows into the auxiliary anode 60c via the connection portion 63, and the electricity in the extension portion 66d flows into the auxiliary anode 60d via the connection portion 63.

Here, the resistance value of the connection part 63 of the bus bar 61 is smaller as it is closer to the power feeding part 62 (conversely, the resistance value is larger as it is further away from the power feeding part 62). In addition, "close to the power feeding part 62" specifically means "the electrical distance from the power feeding part 62 is short".

For example, when taking an example of the resistance value of each connection part 63 when a current of 100 (mA) flows into the bus bar 61, #1 is 8 (mΩ), #2 is 10 (mΩ), #3 is 12 (mΩ), and # 4 series 12 (mΩ), #5 series 13 (mΩ), #6 series 15 (mΩ), #7 series 8 (mΩ), #8 series 10 (mΩ), #9 series 12 (mΩ), #10 series 13 (mΩ), #11 is 14 (mΩ), #12 is 15 (mΩ).

In this way, the resistance value of the connecting part 63 of the bus bar 61 is smaller as it is closer to the feeding part 62. During the plating process, the amount of electricity (that is, the current value) flowing from the bus bar 61 to the auxiliary anodes 60a to 60d is smaller. The tendency is greater closer to the power feeding part 62. Therefore, if the ion resistors 80 a to 80 d described below are not provided, the film thickness of the outer peripheral edge of the substrate Wf may become thicker as it approaches the power feeding portion 62 . Specifically, referring to FIG. 3 , the film thickness may be thickest around the corner portion 91 a of the substrate Wf. In order to cope with this problem, this embodiment includes ion resistors 80a to 80d described below.

Referring to FIGS. 2, 6, and 7, the ion resistors (ion resistors 80a to 80d) are members that exert a resistance function on the movement of ions in the plating liquid Ps. It is composed of components with high resistance. As long as it has such a function, the specific material of the ion resistors 80a to 80d is not particularly limited. For example, a material with high corrosion resistance to the plating liquid Ps such as ceramics is preferably used.

In addition, the ion resistors 80a to 80d are arranged between the auxiliary anodes 60a to 60d inside the plating tank 10 and the substrate Wf. Specifically, as shown in FIG. 2 , the ion resistors 80 a to 80 d of this embodiment are arranged inside the accommodating portion 71 , specifically, in the area between the auxiliary anodes 60 a to 60 d and the separator 51 . The ion resistors 80a to 80d are installed inside the plating tank 10 through designated installation members (not shown).

The "thickness t1 (specifically, the length (mm) in the direction from the anode 30 toward the substrate Wf)" of the ion resistors 80a to 80d is not particularly limited. However, the ion resistors 80a to 80d are formed so as not to interfere with the separator 51 and the auxiliary anode. 60a～60d contact value. That is, the ion resistors 80a to 80d of this embodiment are arranged to have a space between the separator 51 and the auxiliary anodes 60a to 60d. In addition, as illustrated in FIG. 7 , an example of the thickness t1 of the ion resistors 80 a to 80 d in this embodiment is the same value (that is, the same) in the entire extending direction of the ion resistors 80 a to 80 d.

As illustrated in FIG. 6 , the ion resistors 80 a to 80 d extend along the auxiliary anodes 60 a to 60 d. Specifically, the ion resistor 80a extends in the extending direction of the auxiliary anode 60a, and the ion resistor 80b extends in the extending direction of the auxiliary anode 60b. In addition, the ion resistor 80c extends in the extending direction of the auxiliary anode 60c, and the ion resistor 80d extends in the extending direction of the auxiliary anode 60d.

In addition, the ion resistor 80a is arranged to face the auxiliary anode 60a, and the ion resistor 80b is arranged to face the auxiliary anode 60b. The ion resistor 80c is arranged to face the auxiliary anode 60c, and the ion resistor 80d is arranged to face the auxiliary anode 60d. In addition, the plasma resistors 80a to 80d are arranged to surround the space area A1. Specifically, the ion resistors 80a to 80d of this embodiment are arranged to surround the outer periphery of the substrate Wf when viewed from the normal direction of the plated surface of the substrate Wf.

Referring to FIG. 6 , the length (L1) of the ion resistors 80a to 80d in the extending direction is not particularly limited, and may be longer, shorter, or the same than the length of the auxiliary anodes 60a to 60d in the extending direction. An example of this embodiment is that the length (L1) of the ion resistors 80a to 80d is within the range of 80% to 130% of the length of the auxiliary anodes 60a to 60d. Specifically, the length (L1) of the ion resistors 80a to 80d is within the range of 80% to 130% of the length of the auxiliary anodes 60a to 60d. In the range of above 90% and below 120%. In addition, the length (L1) of the ion resistors 80a-80d is preferably the same as the length of the auxiliary anodes 60a-60d, or longer than the auxiliary anodes 60a-60d.

In addition, the width (L2) of the ion resistors 80a to 80d is not particularly limited, and may be longer, shorter, or the same than the width of the auxiliary anodes 60a to 60d. An example of this embodiment is that the width (L2) of the ion resistors 80a to 80d is in a range from 80% to 120% of the width of the auxiliary anodes 60a to 60d.

FIG. 8 is a schematic front view of one of the plurality of ion resistors 80a to 80d (specifically, the ion resistor 80a). Referring to FIGS. 6 and 8 , the ion resistors 80 a to 80 d are configured such that the resistivity (Ω·cm) of the ion resistors 80 a to 80 d becomes higher as the extension direction of the ion resistors 80 a to 80 d approaches the feed portion 62 . Specifically, the resistivity of the ion resistor 80a is higher toward the Y direction in FIG. 6 . The resistivity of the ion resistor 80b is higher toward the Y direction in FIG. 6 . The resistivity of the ion resistor 80c is higher toward the Z direction in FIG. 6 . The resistivity of the ion resistor 80d in Figure 6 is higher toward the Z direction.

More specifically, as illustrated in FIG. 8 , the ion resistors 80 a to 80 d of this embodiment each have a plurality of openings 81 . The aperture ratio of the ion resistors 80a to 80d (that is, the ratio of the area of the opening 81 to the ion resistor per unit area) is lower in the extending direction of the ion resistors 80a to 80d as it approaches the feed portion 62 composition. Therefore, according to this embodiment, it is possible to simply configure the resistivity of the ion resistors 80a to 80d to be higher as it approaches the power feeding portion 62.

In addition, the openings 81 of the ion resistors 80a to 80d are preferably sized such that bubbles (specifically, bubbles composed of oxygen) generated from the auxiliary anodes 60a to 60d during the plating process can pass through the openings 81. With this structure, it is possible to effectively suppress bubbles generated from the auxiliary anodes 60a to 60d from remaining on the surfaces of the ion resistors 80a to 80d facing the auxiliary anodes 60a to 60d. In addition, this structure can exhibit a particularly high effect when the ion resistors 80a to 80d are arranged to extend in the horizontal direction.

In addition, all resistivities of the respective ion resistors 80a to 80d may be the same as each other. Specifically, the total resistivity of the ion resistor 80a (the total resistivity from one end of the ion resistor 80a to the other end), the total resistivity of the ion resistor 80b, the total resistivity of the ion resistor 80c, and the total resistivity of the ion resistor 80d. They can also be equivalent to each other.

Alternatively, the total resistivities of the respective ion resistors 80a to 80d may be different from each other. In this case, it is preferable to configure it so that the total resistivity of the ion resistor arranged near the feeding part 62 is higher than that of the ion resistor arranged far away from the feeding part 62 .

Specifically, it is preferable that the total resistivity of the ion resistor 80a is higher than that of the ion resistor 80d. In other words, the resistance value of the end of the ion resistor 80a far away from the feeding part 62 (the "distal end (end on the Y direction side in Figure 6)") is preferably higher than that of the ion resistor 80d close to the feeding part 62. The resistance value of the end ("the proximal end (the end on the Z direction side in Figure 6)") is high. In addition, the overall resistivity of the ion resistor 80c is preferably higher than that of the ion resistor 80b. In other words, the resistance value of the distal end of the ion resistor 80c (the end on the -Z direction side in FIG. 6) is preferably higher than the resistance value of the proximal end of the ion resistor 80b (the end on the Y-direction side in FIG. 6).

In the present embodiment as described above, since the resistivity of the ion resistors 80a to 80d is configured to be higher as it is closer to the feeding portion 62, it is possible to suppress the increase in the resistance value of the connecting portion 63 of the bus bar 61. The closer to the power feeding portion 62, the smaller the thickness becomes, resulting in uneven film thickness on the outer periphery of the substrate Wf. That is, according to this embodiment, the film thickness at the outer peripheral edge of the substrate Wf can be made uniform. As a result, the film thickness within the surface of the substrate Wf can also be made uniform. (Modification of Embodiment 1)

The structure of the ion resistors 80a to 80d is not limited to the structure illustrated in FIG. 8 . As another example of the ion resistors 80a to 80d, the following ones can be used. 9(A) and 9(B) are schematic diagrams for explaining the ion resistors 80a to 80d of the plating apparatus 1A according to the modified example of the first embodiment. Specifically, FIG. 9(A) is a model front view of one ion resistor (ion resistor 80a) in this modified example, and FIG. 9(B) is a model side view of one ion resistor (ion resistor 80a) in this modified example. view.

The ion resistors 80a to 80d in this modified example are configured such that the thickness t1 of the ion resistors 80a to 80d becomes thicker as the thickness t1 of the ion resistors 80a to 80d approaches the feeding portion 62 in the extending direction of the ion resistors 80a to 80d (see FIG. 9(B) ).

Specifically, referring to FIG. 9(B) and the aforementioned FIG. 6 , the thickness t1 of the ion resistor 80a in this modification becomes thicker toward the Y direction in the extending direction of the ion resistor 80a. The thickness t1 of the ion resistor 80b in this modification is also thicker toward the Y direction in the extending direction of the ion resistor 80b. The thickness t1 of the ion resistor 80d in this modification becomes thicker toward the Z direction in the extending direction of the ion resistor 80d. The thickness t1 of the ion resistor 80c in this modification is also thicker toward the Z direction in the extending direction of the ion resistor 80c.

In addition, as illustrated in FIG. 9(A) , the ion resistors 80a to 80d of this modification may also have a plurality of openings 81. At this time, as illustrated in FIG. 9(A) , the aperture ratios of the ion resistors 80 a to 80 d of this modified example may be the same regardless of the electrical distance from the power feeding portion 62 .

When this modification is adopted, the thickness t1 of the ion resistors 80a to 80d becomes thicker in the extending direction of the ion resistors 80a to 80d as it approaches the feed portion 62, so that the ion resistance can be increased as it approaches the feed portion 62. Resistivity of 80a ~ 80d. (Embodiment 2)

Next, the plating apparatus 1B of Embodiment 2 is demonstrated. FIG. 10 is a schematic cross-sectional view showing the peripheral configuration of one plating tank 10 in the plating apparatus 1B of this embodiment. The plating apparatus 1B of this embodiment differs from the plating apparatus 1 illustrated in FIG. 2 in that it does not include the ion resistors 80a to 80d.

Fig. 11 is a schematic side view of the peripheral structure of one auxiliary anode (auxiliary anode 60a) in this embodiment. FIG. 12 is a schematic diagram for comparing a pair of auxiliary anodes adjacent to each other. Referring to Figures 11, 12, and the aforementioned Figure 5, the difference between the auxiliary anodes 60a to 60d of this embodiment and the auxiliary anodes of the aforementioned embodiment (refer to Figure 7) is that the auxiliary anodes 60a to 60d are arranged in an extending direction. The distance D1 between the auxiliary anodes 60a to 60d and the substrate Wf becomes larger as the distance D1 approaches the power feeding portion 62. Other structures of the auxiliary anodes 60a to 60d of this embodiment are the same as those of the aforementioned embodiment.

Specifically, the auxiliary anode 60a of this embodiment is configured so that the distance D1 between the auxiliary anode 60a and the substrate Wf (specifically, the tie edge 90a) becomes larger toward the Y direction. The auxiliary anode 60b of this embodiment is also configured so that the distance D1 between the auxiliary anode 60b and the substrate Wf (specifically, the tie edge 90b) becomes larger as the auxiliary anode 60b faces the Y direction. The auxiliary anode 60c of this embodiment is configured so that the distance D1 between the auxiliary anode 60c and the substrate Wf (specifically, the tie edge 90c) becomes larger as the auxiliary anode 60c faces the Z direction. The auxiliary anode 60d of this embodiment is also configured so that the distance D1 between the auxiliary anode 60d and the substrate Wf (specifically, the tether edge 90d) becomes larger as the auxiliary anode 60d faces the Z direction.

In addition, as shown in FIG. 12 , when a pair of auxiliary anodes adjacent to each other is compared in the direction of current flow, the auxiliary anode disposed close to the feeding part 62 is compared with the auxiliary anode disposed far away from the feeding part 62 . The average value D1a of the distance between the anode and the substrate Wf should be large.

Specifically, as shown in FIG. 12 , when comparing the auxiliary anode 60a and the auxiliary anode 60d that are adjacent to each other, the average value D1a of the distance between the auxiliary anode 60a and the substrate Wf is preferably larger than the average value D1a of the distance between the auxiliary anode 60d and the substrate Wf. . Similarly, when comparing the auxiliary anode 60c and the auxiliary anode 60b adjacent to each other, the average value D1a of the distance between the auxiliary anode 60c and the substrate Wf is preferably larger than the average value D1a of the distance between the auxiliary anode 60b and the substrate Wf.

In addition, at this time, the average value D1a of the distance between the auxiliary anode 60a and the substrate Wf may be the same as the average value D1a of the distance between the auxiliary anode 60c and the substrate Wf. Similarly, the average value D1a of the distance between the auxiliary anode 60d and the substrate Wf can also be the same as the average value D1a of the distance between the auxiliary anode 60b and the substrate Wf.

In this embodiment, since the distance D1 between the auxiliary anodes 60a to 60d and the substrate Wf becomes larger as the extension direction of the auxiliary anodes 60a to 60d approaches the feeding portion 62, it is possible to suppress the occurrence of the bus bar 61 The resistance value of the connection portion 63 becomes smaller as it approaches the power feeding portion 62, resulting in uneven film thickness on the outer periphery of the substrate Wf. (Example)

The effect of the above embodiment has been confirmed through experiments. Explain this. First, the plating apparatus 1 of the above-mentioned Embodiment 1 is prepared as a plating apparatus of an example. In addition, a plating device having the same structure as the plating device 1 of the Example except that it does not have an ion resistance was prepared as a plating device of a comparative example.

Then, the plating device 1 of the embodiment and the plating device of the comparative example were respectively used to perform plating treatment on the substrate Wf under the same plating treatment conditions, and the film thickness of the substrate Wf after the plating treatment was measured. Specifically, referring to FIG. 3 , the film thickness of the outer peripheral edge of the coating on the substrate Wf after the plating process was measured. More specifically, the peripheral film thickness of the corner portion 91a closest to the power feeding portion 62 is used as the "starting point", and the film thickness is measured in the direction indicated by the arrow in FIG. 3 (clockwise direction). The measurement results of the film thickness are shown in Figure 13.

The horizontal axis of Figure 13 shows the distance (mm) from the "starting point". The vertical axis of FIG. 13 shows the film thickness of the substrate Wf (that is, the film thickness (μm) of the plating film formed on the substrate Wf). As can be understood from FIG. 13 , when the substrate Wf is plated using the plating apparatus of the comparative example, the film thickness around the corner portion 91 a close to the feed portion 62 is the thickest on the outer periphery of the substrate Wf, and the film thickness is the thickest away from the feed portion 62 The film thickness around the corner portion 91c is the thinnest. In the comparative example, the film thickness distribution at the outer periphery of the coating on the substrate Wf is measured as "Range/2Ave (that is, (maximum value of film thickness - minimum value)/(average value of film thickness × 2))" 6.8%.

Relatively speaking, when the substrate Wf is plated using the plating device 1 of the embodiment, when viewed as a whole, although the film thickness is thickest around the corner portion 91 a of the substrate Wf close to the power feeding portion 62 , it is far away from the power feeding portion. The film thickness around the corner 91c of corner 62 is the thinnest, but the film thickness around the corner 91a is smaller than in the comparative example. As a result, in the Example, compared with the Comparative Example, the film thickness of the outer peripheral edge of the substrate Wf was uniform throughout. When specific numerical values are given, in the Example, the film thickness distribution at the outer periphery of the substrate Wf was 5.5% (Range/2Ave), and the numerical value was smaller compared with the Comparative Example. That is, comparing the Example with the Comparative Example, it is possible to achieve uniform film thickness distribution at the outer peripheral edge of the substrate Wf.

In addition, in both the plating apparatus 1A of the modified example of the first embodiment and the plating apparatus 1B of the second embodiment, the substrate Wf is plated under the same conditions as in the first embodiment to measure the film thickness. As a result, in the plating apparatus 1A and the plating apparatus 1B, the film thickness distribution at the outer periphery of the substrate Wf obtained a value of 5.5% (Range/2Ave), just like the plating apparatus 1 of the Example. The effects of the aforementioned embodiments were confirmed experimentally as described above.

The embodiments of the present invention have been described in detail. However, the present invention is not limited to the specific embodiments, and various modifications and changes can be made within the scope of the invention described in the patent claims.

1,1A,1B: plating device 10:Plating tank 20:Substrate holder 30:Anode 40:Anode box 40a:Open your mouth 45:Anode mask 45a:hole 50: Diaphragm 51: Diaphragm 60a, 60b, 60c, 60d: auxiliary anode 61:Bus bar 62: Feeding part 63:Connection parts 64:Connection parts 65:Introduction part 66a, 66b, 66c, 66d: extension part 70: Middle mask 70a:hole 71: Containment Department 71a: Open your mouth 72a,72b,72c,72d: side 80a, 80b, 80c, 80d: ion resistance 81:Open your mouth 90a,90b,90c,90d: side 91a,91b,91c,91d: Corner 100:Box 102:Box table 104:Aligner 106: Spin rinse dryer 110: Plating module 120:Loading/unloading station 122:Transport robot 124: Temporary box 126: Pre-wet module 128:Prepreg module 130a: First flushing module 130b: Second flushing module 132:Jet module 136:Overflow tank 140:Conveying device 142: First conveying device 144: Second conveying device 150:Orbit 152:Loading plate 160:Paddle drive part 162:Paddle driven part 170:Control module 171:CPU 172:Memory device 200:Power supply A1: Space area D1: distance D1a: average L1:Length L2: Width Ps: plating solution t1:Thickness Wf: substrate

FIG. 1 is an overall layout diagram of the plating apparatus according to Embodiment 1. FIG. 2 is a schematic cross-sectional view showing the peripheral structure of a plating tank in the plating apparatus according to Embodiment 1. Fig. 3 is a schematic front view of the substrate according to Embodiment 1. 4 is a schematic perspective view of the peripheral structure of the intermediate mask according to Embodiment 1. FIG. 5 is a schematic front view of the bus bar and auxiliary anode according to the first embodiment. FIG. 6 is a schematic front view of the ion resistor according to the first embodiment. 7 is a schematic side view of the peripheral structure of the auxiliary anode in Embodiment 1. Fig. 8 is a schematic front view of the ion resistor according to the first embodiment. 9(A) and 9(B) are schematic diagrams for explaining the ion resistance of the plating apparatus according to the modification of the first embodiment. FIG. 10 is a schematic cross-sectional view showing the peripheral configuration of one plating tank in the plating apparatus according to Embodiment 2. Fig. 11 is a schematic side view of the peripheral structure of the auxiliary anode in Embodiment 2. FIG. 12 is a schematic diagram of a pair of adjacent auxiliary anodes in Embodiment 2 for comparison. Figure 13 is a graph showing the measurement results of film thickness.

1: Plating device

60a, 60b, 60c, 60d: auxiliary anode

61:Bus bar

62: Feeding part

80a, 80b, 80c, 80d: ion resistance

A1: Space area

L1:Length

L2: Width

Claims (6)

A plating device equipped with: Plating tank, which stores plating liquid; Anode, which is arranged inside the aforementioned plating tank; a substrate holder, which is inside the plating tank and is configured to be opposite to the anode and capable of arranging the substrate; At least one auxiliary anode is arranged between the anode and the substrate inside the plating tank and extends along the outer periphery of the substrate; A bus bar has: a feed portion for supplying electricity, and a plurality of connection portions connected to at least one of the aforementioned auxiliary anodes and arranged in the extending direction of the auxiliary anode, and for supplying electricity to the aforementioned feed portion via The aforementioned connecting portion is formed in such a manner that the aforementioned auxiliary anode flows into the aforementioned auxiliary anode; and At least one ion resistor is arranged between the auxiliary anode and the substrate inside the plating tank and extends along the auxiliary anode; The ion resistor is configured such that the resistivity of the ion resistor becomes higher as the extending direction of the ion resistor is closer to the feeding point. The plating device of claim 1, wherein the aforementioned ion resistor has a plurality of openings, Since the aperture ratio of the ion resistor is lower as the extending direction of the ion resistor is closer to the feeding portion, the resistivity of the ion resistor is higher as the extending direction of the ion resistor is closer to the feeding portion. The plating device of claim 1, wherein the thickness of the ion resistor becomes thicker as the extending direction of the ion resistor is closer to the feeding position, so that the resistivity of the ion resistor becomes thicker in the extending direction of the ion resistor. The closer to the aforementioned feed position, the higher it is. The plating device of claim 1, wherein the aforementioned bus bar has a connecting portion that connects the aforementioned feeding portion and the aforementioned connecting portion, The aforementioned connecting portion has a plurality of extending portions, which extend along the outer periphery of the aforementioned substrate, A plurality of the aforementioned extension parts are arranged in a frame shape, At least one of the aforementioned auxiliary anodes includes a plurality of the aforementioned auxiliary anodes, Each of the aforementioned auxiliary anodes is connected to each of the aforementioned extending portions via a plurality of the aforementioned connecting portions. For example, the plating device of claim 1 is provided with a receiving portion that accommodates at least one of the aforementioned auxiliary anodes inside, The aforesaid receiving part is provided with an opening facing the above-mentioned substrate, The opening is blocked by the diaphragm to allow the metal ions contained in the plating solution to pass through, and also suppresses the passage of oxygen generated from the surface of the auxiliary anode. A plating device equipped with: Plating tank, which stores plating liquid; Anode, which is arranged inside the aforementioned plating tank; a substrate holder, which is inside the plating tank and is configured to be opposite to the anode and capable of arranging the substrate; At least one auxiliary anode is arranged between the anode and the substrate inside the plating tank and extends along the outer periphery of the substrate; and A bus bar has: a feed portion for supplying electricity, and a plurality of connection portions connected to at least one of the aforementioned auxiliary anodes and arranged in the extending direction of the auxiliary anode, and for supplying electricity to the aforementioned feed portion via The aforementioned connection part is formed in such a manner that it flows into the aforementioned auxiliary anode; The auxiliary anode is configured such that the distance between the auxiliary anode and the substrate becomes larger as the extending direction of the auxiliary anode is closer to the power feeding portion.

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