JP7441402B2 - Electrostatic chuck and processing equipment - Google Patents

Description

Aspects of the present invention relate to electrostatic chucks and processing apparatus.

Ceramic electrostatic chucks are manufactured by sandwiching electrodes between ceramic dielectric substrates such as alumina and firing them.Electrostatic adsorption power is applied to the built-in electrodes, and the substrates, such as silicon wafers, are held together by the electrostatic force. It is adsorbed by. In such an electrostatic chuck, an inert gas such as helium (He) is passed between the surface of the ceramic dielectric substrate and the back surface of the substrate, which is the object to be adsorbed, to reduce the temperature of the substrate, which is the object to be adsorbed. is controlled.

For example, in some apparatuses that process a substrate, such as a CVD (Chemical Vapor Deposition) apparatus, a sputtering apparatus, an ion implanter, and an etching apparatus, the temperature of the substrate increases during the process. In the electrostatic chuck used in such devices, an inert gas such as He is passed between the ceramic dielectric substrate and the substrate to be adsorbed, and the temperature of the substrate is increased by bringing the inert gas into contact with the substrate. is suppressed.

In an electrostatic chuck that controls the substrate temperature using an inert gas such as He, a hole (gas introduction path) for introducing an inert gas such as He is formed in the ceramic dielectric substrate and the base plate that supports the ceramic dielectric substrate. ) is provided. Further, the ceramic dielectric substrate is provided with a through hole that communicates with the gas introduction path of the base plate. Thereby, the inert gas introduced from the gas introduction path of the base plate is guided to the back surface of the substrate through the through hole of the ceramic dielectric substrate.

Here, when processing a substrate within the apparatus, discharge (arc discharge) may occur from plasma within the apparatus toward the metal base plate. The gas introduction path of the base plate and the through hole of the ceramic dielectric substrate may easily become a path for discharge. Therefore, there is a technique to improve the resistance (dielectric strength voltage, etc.) against arc discharge by providing a porous portion in the gas introduction path of the base plate or the through hole of the ceramic dielectric substrate. For example, Patent Document 1 discloses that a ceramic sintered porous body is provided in the gas introduction passage, and the structure of the ceramic sintered porous body and the membrane pores are used as gas flow passages to improve insulation within the gas introduction passage. An electrostatic chuck is disclosed. Further, Patent Document 2 discloses an electrostatic chuck in which a discharge prevention member for a processing gas flow path made of a ceramic porous body is provided in a gas diffusion gap to prevent discharge. Further, Patent Document 3 discloses an electrostatic chuck that is provided with a dielectric insert made of a porous dielectric such as alumina to reduce arc discharge. Further, Patent Document 4 discloses a technique in which a plurality of pores communicating with gas supply holes are provided in an electrostatic chuck made of aluminum nitride or the like by a laser processing method.
In such an electrostatic chuck, further reduction of arc discharge is desired.

Japanese Patent Application Publication No. 2010-123712 Japanese Patent Application Publication No. 2003-338492 Japanese Patent Application Publication No. 10-50813 Japanese Patent Application Publication No. 2009-218592

The present invention was made based on the recognition of this problem, and an object of the present invention is to provide an electrostatic chuck and a processing device that can reduce arc discharge.

A first invention provides a ceramic dielectric substrate having a first main surface on which an object to be attracted is placed, and a second main surface opposite to the first main surface; a base plate supporting the ceramic dielectric substrate and having a gas introduction path; and a first porous portion provided on the ceramic dielectric substrate and facing the gas introduction path; When one direction is defined as a second direction and a direction substantially orthogonal to the first direction is defined as a second direction, the first porous region includes a first porous region and a first dense region denser than the first porous region. , the first dense region has a cylindrical shape and surrounds a side surface of the first porous region, and the first porous region includes a plurality of first sparse portions having a plurality of pores, and a first sparse region having a plurality of pores. a first dense portion having a density higher than that of the plurality of first dense regions, and a dimension in the second direction is smaller than a dimension of the first dense region in the second direction; Each of the portions extends in the first direction, the first dense portion is located between the plurality of first sparse portions, and the first sparse portion is provided between the plurality of holes. a first wall portion, in the second direction, a minimum dimension of the first wall portion is smaller than a minimum dimension of the first dense portion; The electrostatic chuck is characterized in that at least a part of the edge of the opening on the body substrate side is formed in a curved line.

According to this electrostatic chuck, since the first porous part is provided with the first sparse part and the first dense part extending in the first direction, the first porous part can maintain resistance to arc discharge and gas flow rate. 1. The mechanical strength (rigidity) of the porous portion can be improved. Furthermore, since at least a portion of the edge of the opening of the gas introduction path is configured with a curved line, electric field concentration can be suppressed, and arc discharge can be reduced.

A second invention provides a ceramic dielectric substrate having a first main surface on which an object to be attracted is placed, and a second main surface opposite to the first main surface; A base plate supporting the base plate and having a gas introduction path, and a second porous portion provided on the base plate and facing the gas introduction path, the direction from the base plate toward the ceramic dielectric substrate being a first direction. , when the second direction is a direction substantially perpendicular to the first direction, the second porous portion includes a second porous region and a second dense region denser than the second porous region. , the second dense region has a cylindrical shape and surrounds the side surface of the second porous region, and the second porous region has a plurality of second sparse portions having a plurality of pores and a density of the second sparse portion. and a second dense portion having a density higher than that of the second dense region and having a dimension in the second direction smaller than a dimension of the second dense region in the second direction, and each of the plurality of second sparse regions extends in the first direction, the second dense portion is located between the plurality of second sparse portions, and the second sparse portion is located between the plurality of holes. a wall portion, in the second direction, the minimum dimension of the second wall portion is smaller than the minimum dimension of the second dense portion, and the ceramic dielectric substrate side of the gas introduction path The electrostatic chuck is characterized in that at least a part of the edge of the opening is formed in a curved line.

According to this electrostatic chuck, since the second sparse portion and the second dense portion extending in the first direction are provided in the second porous portion, resistance to arc discharge and gas flow rate are ensured, and the 2. Mechanical strength (rigidity) of the porous portion can be improved. Furthermore, since at least a portion of the edge of the opening of the gas introduction path is configured with a curved line, electric field concentration can be suppressed, and arc discharge can be reduced.

A third invention is based on the first or second invention, wherein in the second direction, the dimensions of the plurality of holes provided in each of the plurality of first sparse portions are smaller than the dimensions of the first dense portion. is also smaller , or in the second direction, the dimensions of the plurality of holes provided in each of the plurality of second sparse portions are smaller than the dimensions of the second dense portion. It's Chuck.

According to this electrostatic chuck, arc discharge can be reduced.

A fourth invention is the aspect ratio of the plurality of holes provided in each of the plurality of first sparse portions, or the plurality of second sparse portions according to any one of the first to third inventions. The electrostatic chuck is characterized in that the aspect ratio of the plurality of holes provided in each of the holes is 30 or more.

According to this electrostatic chuck, resistance to arc discharge can be further improved.

In a fifth invention, in any one of the first to fourth inventions, in the second direction, the dimensions of the plurality of holes provided in each of the plurality of first sparse portions , or the plurality of The electrostatic chuck is characterized in that the dimensions of the plurality of holes provided in each of the second sparse portions are 1 micrometer or more and 20 micrometers or less.

According to this electrostatic chuck, it is possible to arrange holes that extend in one direction and have a hole size of 1 to 20 micrometers, so that high resistance to arc discharge can be achieved.

A sixth aspect of the present invention is that in any one of the first to fifth aspects, when viewed along the first direction, the plurality of holes provided in the first sparse portion are formed in the first sparse portion. and the number of holes adjacent to and surrounding the first hole among the plurality of holes is 6 , or along the first direction. When viewed, the plurality of holes provided in the second sparse portion include a second hole located at the center of the second sparse portion, and the plurality of holes adjacent to the second hole among the plurality of holes The electrostatic chuck is characterized in that the number of holes surrounding the second hole is six.

According to this electrostatic chuck, it is possible to arrange a plurality of holes with high isotropy and high density in plan view. Thereby, the rigidity of the first porous portion can be improved while ensuring resistance to arc discharge and a flow rate of flowing gas.

In a seventh invention, in any one of the first to sixth inventions, the ceramic dielectric substrate is arranged between the first main surface and the first porous part or the second porous part . at least one of the ceramic dielectric substrate and the first porous portion is located at the first hole portion and the first porous portion or the second porous portion. , and in a second direction substantially perpendicular to the first direction, the dimensions of the second hole are equal to those of the first porous part or the second porous part. The electrostatic chuck is characterized in that the size of the electrostatic chuck is smaller than the size of the first hole and larger than the size of the first hole.

According to this electrostatic chuck, the first porous portion provided at a position facing the gas introduction path makes it possible to improve resistance to arc discharge while ensuring a flow rate of gas flowing into the first hole. . Further, since the second hole having a predetermined size is provided, most of the gas introduced into the first porous portion having a large size is transferred to the first hole having a small size through the second hole. can be introduced into In other words, arc discharge can be reduced and gas flow can be made smoother.

An eighth invention is based on the seventh invention, wherein the first porous region has a higher density than the first sparse portion, and a dimension in the second direction is smaller than the first porous region in the second direction . It further has a first dense part larger than the dimension of the dense part, and when projected onto a plane perpendicular to the first direction, the first dense part and the first hole overlap, or The second porous region has a second dense portion that has a higher density than the second sparse portion and a dimension in the second direction that is larger than a dimension of the second dense portion in the second direction. The electrostatic chuck further comprises: the second dense portion and the first hole overlap when projected onto a plane perpendicular to the first direction .

According to this electrostatic chuck, since the dense portion and the first hole overlap, the generated current tends to flow bypassing the dense portion. Therefore, the distance through which the current flows (conductive path) can be increased, making it difficult for electrons to be accelerated, which in turn can suppress the occurrence of arc discharge.

In a ninth aspect of the invention, in the eighth aspect, when projected onto a plane perpendicular to the first direction, the plurality of first sparse portions are provided around the first dense portion , or the plurality of first sparse portions are provided around the first dense portion. The electrostatic chuck is characterized in that the plurality of second sparse portions are provided around the second dense portion when projected onto a plane perpendicular to the first direction .

According to this electrostatic chuck, it is possible to effectively suppress the occurrence of arc discharge while ensuring a gas flow.

A tenth invention is based on the eighth or ninth invention, wherein the length of the first dense part along the first direction is smaller than the length of the first porous part along the first direction , or The electrostatic chuck is characterized in that a length of the second dense portion along the first direction is smaller than a length of the second porous portion along the first direction .

According to this electrostatic chuck, it is possible to effectively suppress the occurrence of arc discharge while ensuring a gas flow.

An eleventh invention is based on any one of the eighth to tenth inventions, wherein the first sparse portion is provided between the first dense portion and the base plate in the first direction , or the first sparse portion is provided between the first dense portion and the base plate. The electrostatic chuck is characterized in that the second sparse portion is provided between the second dense portion and the base plate in one direction .

According to this electrostatic chuck, it is possible to smooth the gas flow while suppressing the occurrence of arc discharge.

A twelfth invention is based on the eighth or ninth invention, wherein the length of the first dense part along the first direction is approximately the same as the length of the first porous part along the first direction. Alternatively, the electrostatic chuck is characterized in that a length of the second dense portion along the first direction is approximately the same as a length of the second porous portion along the first direction .

According to this electrostatic chuck, the length of the dense portion along the first direction is made approximately the same as the length of the first porous portion along the first direction, which makes it possible to more effectively prevent arc discharge from occurring. can be suppressed to

A thirteenth invention is the electrostatic charger according to any one of the seventh to twelfth inventions, characterized in that the first hole extends in a direction inclined at a predetermined angle with respect to the first direction. It's Chuck.

According to this electrostatic chuck, each of the plurality of first sparse portions extends in a direction inclined at a predetermined angle with respect to the first direction, so that a current flows inside the hole provided in the first sparse portion. It is thought that electrons are less likely to be accelerated when flowing. Therefore, the occurrence of arc discharge can be effectively suppressed.

A fourteenth invention is the one according to any one of the first to thirteenth inventions, wherein the plurality of holes provided in each of the plurality of first sparse portions or the plurality of second sparse portions are arranged so that the gas introduction This electrostatic chuck is characterized in that gas introduced from the channel can flow therethrough.

According to this electrostatic chuck, gas introduced from the gas introduction path can be guided to the first main surface side of the ceramic dielectric substrate.

A fifteenth invention is the electrostatic chuck according to the thirteenth invention, wherein the angle between the first direction and the direction in which the first hole extends is 5° or more and 30° or less. It is.

According to this electrostatic chuck, it becomes easy to suppress the occurrence of arc discharge.

A sixteenth invention is a processing apparatus comprising any one of the electrostatic chucks described above and a supply section capable of supplying gas to a gas introduction path provided in the electrostatic chuck. . According to this processing device, it is possible to reduce arc discharge.

According to aspects of the present invention, an electrostatic chuck and a processing device that can reduce arc discharge are provided.

FIG. 1 is a schematic cross-sectional view illustrating an electrostatic chuck according to the present embodiment. (a) to (d) are schematic diagrams illustrating an electrostatic chuck according to an embodiment. (a) and (b) are schematic diagrams illustrating a porous portion of an electrostatic chuck according to an embodiment. FIG. 2 is a schematic plan view illustrating a porous portion of an electrostatic chuck according to an embodiment. FIG. 2 is a schematic plan view illustrating a porous portion of an electrostatic chuck according to an embodiment. (a) and (b) are schematic plan views illustrating a porous part of an electrostatic chuck according to an embodiment. (a) and (b) are schematic diagrams illustrating a first porous portion 90 according to another embodiment. FIG. 1 is a schematic cross-sectional view illustrating an electrostatic chuck according to an embodiment. (a) and (b) are schematic cross-sectional views illustrating an electrostatic chuck according to an embodiment. FIG. 2 is a schematic cross-sectional view illustrating a porous portion of an electrostatic chuck according to an embodiment. FIG. 7 is a schematic cross-sectional view illustrating a porous portion according to another embodiment. (a) and (b) are schematic cross-sectional views illustrating porous parts according to other embodiments. (a) to (d) are schematic cross-sectional views illustrating porous parts according to other embodiments. (a) to (c) are schematic cross-sectional views illustrating porous parts according to other embodiments. (a) and (b) are schematic cross-sectional views illustrating porous parts according to other embodiments. FIG. 7 is a schematic cross-sectional view illustrating an electrostatic chuck according to another embodiment. (a) and (b) are enlarged views of region C shown in FIG. 16. FIG. 7 is a schematic cross-sectional view illustrating a plurality of holes according to another embodiment. (a) and (b) are schematic cross-sectional views illustrating the shape of an opening portion of a hole. FIG. 7 is a schematic cross-sectional view illustrating an electrostatic chuck according to another embodiment. FIG. 7 is a schematic cross-sectional view illustrating an electrostatic chuck according to another embodiment. FIG. 7 is a schematic cross-sectional view illustrating an electrostatic chuck according to another embodiment. 23 is an enlarged view of region E shown in FIG. 22. FIG. 23 is an enlarged view showing another embodiment of region E shown in FIG. 22. FIG. FIG. 1 is a schematic diagram illustrating a processing device according to the present embodiment.

Embodiments of the present invention will be described below with reference to the drawings. Note that in each drawing, similar components are denoted by the same reference numerals, and detailed explanations are omitted as appropriate.
In each figure, the direction from the base plate 50 toward the ceramic dielectric substrate 11 is the Z direction (corresponding to an example of the first direction), and one of the directions substantially orthogonal to the Z direction is the Y direction (the second direction). The direction substantially orthogonal to the Z direction and the Y direction is defined as the X direction (corresponding to an example of the second direction).

(electrostatic chuck)
FIG. 1 is a schematic cross-sectional view illustrating an electrostatic chuck according to this embodiment.
As shown in FIG. 1, the electrostatic chuck 110 according to this embodiment includes a ceramic dielectric substrate 11, a base plate 50, and a porous portion 90. In this example, the electrostatic chuck 110 further includes a porous portion 70.

The ceramic dielectric substrate 11 is a flat base material made of, for example, sintered ceramic. For example, the ceramic dielectric substrate 11 includes aluminum oxide (Al ₂ O ₃ ). For example, the ceramic dielectric substrate 11 is made of high purity aluminum oxide. The concentration of aluminum oxide in the ceramic dielectric substrate 11 is, for example, 99 atomic percent or more and 100 atomic percent or less. By using high-purity aluminum oxide, the plasma resistance of the ceramic dielectric substrate 11 can be improved. The ceramic dielectric substrate 11 has a first main surface 11a on which an object W (an object to be attracted) is placed, and a second main surface 11b opposite to the first main surface 11a. The object W is, for example, a semiconductor substrate such as a silicon wafer.

An electrode 12 is provided on the ceramic dielectric substrate 11 . The electrode 12 is provided between the first main surface 11a and the second main surface 11b of the ceramic dielectric substrate 11. Electrode 12 is formed to be inserted into ceramic dielectric substrate 11 . A power source 210 is electrically connected to the electrode 12 via a connecting portion 20 and wiring 211 . By applying a suction and holding voltage to the electrode 12 using the power source 210, electric charges are generated on the first main surface 11a side of the electrode 12, and the object W can be suctioned and held by electrostatic force.

The shape of the electrode 12 is a thin film along the first main surface 11a and the second main surface 11b of the ceramic dielectric substrate 11. The electrode 12 is an adsorption electrode for adsorbing and holding the object W. Electrode 12 may be monopolar or bipolar. The electrode 12 illustrated in FIG. 1 is of a bipolar type, and two electrodes 12 are provided on the same surface.

The electrode 12 is provided with a connecting portion 20 extending toward the second main surface 11b side of the ceramic dielectric substrate 11. The connecting portion 20 is, for example, a via (solid type) or a via hole (hollow type) that is electrically connected to the electrode 12. The connection portion 20 may be a metal terminal connected by a suitable method such as brazing.

The base plate 50 is a member that supports the ceramic dielectric substrate 11. The ceramic dielectric substrate 11 is fixed onto the base plate 50 by a joint 60 illustrated in FIG. 2(a). The joint portion 60 may be made of, for example, a cured silicone adhesive.

The base plate 50 is made of metal, for example. The base plate 50 is divided into an upper part 50a and a lower part 50b made of aluminum, for example, and a communication path 55 is provided between the upper part 50a and the lower part 50b. One end of the communication path 55 is connected to the input path 51 , and the other end of the communication path 55 is connected to the output path 52 . The base plate 50 may have a thermal sprayed part (not shown) at the end on the second main surface 11b side. The sprayed portion is formed by, for example, thermal spraying. The thermal spraying portion may constitute the end surface (upper surface 50U) of the base plate 50 on the second main surface 11b side. The thermal spraying section is provided as necessary and can be omitted.

The base plate 50 also serves to adjust the temperature of the electrostatic chuck 110. For example, when cooling the electrostatic chuck 110, a cooling medium flows in from the input path 51, passes through the communication path 55, and flows out from the output path 52. Thereby, the heat of the base plate 50 can be absorbed by the cooling medium, and the ceramic dielectric substrate 11 attached thereon can be cooled. On the other hand, when keeping the electrostatic chuck 110 warm, it is also possible to put a heat insulating medium into the communication path 55. It is also possible to incorporate a heating element into the ceramic dielectric substrate 11 or the base plate 50. By adjusting the temperature of the base plate 50 and the ceramic dielectric substrate 11, the temperature of the object W held by the electrostatic chuck 110 can be adjusted.

Further, dots 13 are provided on the first principal surface 11a side of the ceramic dielectric substrate 11 as necessary, and grooves 14 are provided between the dots 13. That is, the first main surface 11a is an uneven surface and has concave portions and convex portions. The convex portions of the first main surface 11a correspond to the dots 13, and the concave portions of the first main surface 11a correspond to the grooves 14. For example, the groove 14 may extend continuously in the XY plane. Thereby, gas such as He can be distributed over the entire first main surface 11a. A space is formed between the back surface of the object W placed on the electrostatic chuck 110 and the first main surface 11a including the groove 14.

The ceramic dielectric substrate 11 has a through hole 15 connected to the groove 14 . The through hole 15 is provided from the second main surface 11b to the first main surface 11a. That is, the through hole 15 extends in the Z direction from the second main surface 11b to the first main surface 11a, and penetrates the ceramic dielectric substrate 11. The through hole 15 includes, for example, a hole 15a, a hole 15b, a hole 15c, and a hole 15d (details will be described later).

By appropriately selecting the height of the dots 13, the depth of the grooves 14, the area ratio of the dots 13 and the grooves 14, the shape, etc., the temperature of the object W and the particles attached to the object W can be controlled in a preferable state. Can be done.

A gas introduction path 53 is provided in the base plate 50 . The gas introduction path 53 is provided so as to penetrate the base plate 50, for example. The gas introduction path 53 may not penetrate the base plate 50 but may be branched from the middle of another gas introduction path 53 and provided to the ceramic dielectric substrate 11 side. Furthermore, the gas introduction passages 53 may be provided at multiple locations on the base plate 50.

The gas introduction path 53 communicates with the through hole 15 . That is, the gas (such as helium (He)) that has flowed into the gas introduction path 53 flows into the through hole 15 after passing through the gas introduction path 53 .

After passing through the through hole 15, the gas flows into the space provided between the object W and the first main surface 11a including the groove 14. Thereby, the object W can be directly cooled by the gas.

The porous portion 90 can be provided, for example, between the base plate 50 and the first main surface 11a of the ceramic dielectric substrate 11 in the Z direction. The porous portion 90 can be provided at a position facing the gas introduction path 53, for example. For example, the porous portion 90 is provided in the through hole 15 of the ceramic dielectric substrate 11. For example, the porous portion 90 is inserted into the through hole 15.

FIGS. 2A and 2B are schematic diagrams illustrating the electrostatic chuck according to the embodiment. FIG. 2A illustrates the vicinity of the porous portion 90 and the porous portion 70. FIG. 2(a) corresponds to an enlarged view of area A shown in FIG. FIG. 2(b) is a plan view illustrating the porous portion 90.

Moreover, FIGS. 2(c) and 2(d) are schematic cross-sectional views for illustrating a hole 15c and a hole 15d according to another embodiment.

In order to avoid complication, the dots 13 (for example, see FIG. 1) are omitted in FIGS. 2(a), 2(c), and 2(d).

In this example, the through hole 15 has a hole 15a and a hole 15b (first hole). One end of the hole 15a is located on the second main surface 11b of the ceramic dielectric substrate 11.

Further, the ceramic dielectric substrate 11 can have a hole 15b located between the first main surface 11a and the porous portion 90 in the Z direction. The hole 15b communicates with the hole 15a and extends to the first main surface 11a of the ceramic dielectric substrate 11. That is, one end of the hole 15b is located on the first main surface 11a (bottom surface 14a of the groove 14). The hole portion 15b is located between the first main surface 11a of the ceramic dielectric substrate 11 and the first porous portion 90. The hole portion 15b is a connecting hole that connects the porous portion 90 and the groove 14. The diameter (length along the X direction) of the hole 15b is smaller than the diameter (length along the X direction) of the hole 15a. By providing the hole 15b with a small diameter, the degree of freedom in designing the space formed between the ceramic dielectric substrate 11 and the object W (for example, the first main surface 11a including the groove 14) can be increased. . For example, as shown in FIG. 2A, the width of the groove 14 (length along the X direction) can be made shorter than the width of the porous portion 90 (length along the X direction). Thereby, for example, discharge in the space formed between the ceramic dielectric substrate 11 and the object W can be suppressed.

The diameter of the hole 15b is, for example, 0.05 mm or more and 0.5 mm or less. The diameter of the hole 15a is, for example, 1 mm or more and 5 mm or less. Note that the hole 15b may be indirectly connected to the hole 15a. That is, a hole 15c (second hole) may be provided that connects the hole 15a and the hole 15b. As illustrated in FIG. 2(a), the hole 15c can be provided in the ceramic dielectric substrate 11. As illustrated in FIG. 2C, the holes 15c can also be provided in the porous portion 90. As illustrated in FIG. 2(d), the holes 15c can also be provided in the ceramic dielectric substrate 11 and the porous portion 90. That is, at least one of the ceramic dielectric substrate 11 and the porous portion 90 can have a hole 15c located between the hole 15b and the porous portion 90. In this case, if the hole 15c is provided in the ceramic dielectric substrate 11, the strength around the hole 15c can be increased, and the occurrence of chipping or the like around the hole 15c can be suppressed. Therefore, the occurrence of arc discharge can be suppressed more effectively. If the hole 15c is provided in the porous portion 90, alignment of the hole 15c and the porous portion 90 becomes easy. Therefore, it becomes easier to achieve both reduction of arc discharge and smooth flow of gas. Each of the holes 15a, 15b, and 15c has a cylindrical shape extending in the Z direction, for example.

In this case, the size of the hole 15c can be smaller than the size of the porous part 90 and larger than the size of the hole 15b in the X direction or the Y direction. According to the electrostatic chuck 110 according to the present embodiment, the porous portion 90 provided at a position facing the gas introduction path 53 improves resistance to arc discharge while ensuring the flow rate of gas flowing into the hole portion 15b. can be done. Further, since the dimension of the hole 15c in the X direction or the Y direction is made larger than the dimension of the hole 15b, most of the gas introduced into the large porous portion 90 is transferred to the hole 15c. It can be introduced into the small hole 15b through the hole 15b. In other words, arc discharge can be reduced and gas flow can be made smoother.

As described above, the ceramic dielectric substrate 11 has at least one groove 14 that is open to the first main surface 11 a and communicates with the through hole 15 . Further, the dimension of the hole 15c in the Z direction can be made smaller than the dimension of the groove 14 in the Z direction. Thereby, the time for gas to pass through the hole 15c can be shortened. That is, the occurrence of arc discharge can be more effectively suppressed while smoothing the gas flow. Furthermore, the dimensions of the hole 15c can be made larger than the dimensions of the groove 14 in the X direction or the Y direction. In this way, gas can easily flow into the groove 14. Therefore, it becomes possible to effectively cool the object W with the gas.

The arithmetic mean surface roughness Ra of the surface 15c1 (ceiling surface) on the first main surface 11a side of the hole 15c is the arithmetic mean surface roughness Ra of the bottom surface 14a (surface on the second main surface 11b side) of the groove 14. It is preferable to make it smaller than Ra. In this way, since there are no large irregularities on the surface 15c1 of the hole 15c, it is possible to effectively suppress the occurrence of arc discharge.

Further, the arithmetic mean surface roughness Ra of the surface 14a of the groove 14 on the second main surface 11b side is preferably smaller than the arithmetic mean surface roughness Ra of the second main surface 11b. In this way, since the surface 14a of the groove 14 does not have large irregularities, it is possible to effectively suppress the occurrence of arc discharge.

Further, a hole 15d (third hole) provided between the hole 15b and the hole 15c can be further provided. In the X direction or the Y direction, the size of the hole 15d can be larger than the hole 15b and smaller than the hole 15c. Providing the hole 15d can facilitate the flow of gas.

As described above, a joint 60 can be provided between the ceramic dielectric substrate 11 and the base plate 50. In the Z direction, the size of the hole 15c can be made smaller than the size of the joint 60. In this way, the bonding strength between the ceramic dielectric substrate 11 and the base plate 50 can be improved. Furthermore, since the size of the hole 15c in the Z direction is smaller than the size of the joint 60, it is possible to more effectively suppress the occurrence of arc discharge while smoothing the gas flow.

In this example, the porous portion 90 is provided in the hole portion 15a. Therefore, the upper surface 90U of the porous portion 90 is not exposed to the first main surface 11a. That is, the upper surface 90U of the porous portion 90 is located between the first main surface 11a and the second main surface 11b. On the other hand, the lower surface 90L of the porous portion 90 is exposed to the second main surface 11b.

Next, the porous portion 90 will be explained. The porous portion 90 has a plurality of sparse portions 94 and a plurality of dense portions 95, which will be described later. Note that although FIG. 2 illustrates the case where the porous portion 90 is provided on the ceramic substrate 11, the porous portion 90 may be provided on the base plate 50 as described later (for example, as shown in FIG. 12(b) Such).
The porous portion 90 includes a porous region 91 (an example of a first porous region and a second porous region) having a plurality of pores 96, and a dense region 93 (a first dense region, a second dense region) that is denser than the porous region 91. example) and has. The porous region 91 is configured to allow gas to flow therethrough. Gas flows through each of the plurality of holes 96 . The dense region 93 is a region having fewer pores 96 than the porous region 91, or a region having substantially no pores 96. The porosity (%) of the dense region 93 is lower than the porosity (%) of the porous region 91. The density (grams/cubic centimeter: g/cm ³ ) of the dense region 93 is higher than the density (g/cm ³ ) of the porous region 91 . Since the dense region 93 is denser than the porous region 91, the rigidity (mechanical strength) of the dense region 93 is higher than that of the porous region 91, for example.

The porosity of the dense region 93 is, for example, the ratio of the volume of the spaces (holes 96) included in the dense region 93 to the total volume of the dense region 93. The porosity of the porous region 91 is, for example, the ratio of the volume of the spaces (holes 96) included in the porous region 91 to the total volume of the porous region 91. For example, the porosity of the porous region 91 is 5% or more and 40% or less, preferably 10% or more and 30% or less, and the porosity of the dense region 93 is 0% or more and 5% or less.

The porous portion 90 is columnar (for example, cylindrical). Moreover, the porous region 91 is columnar (for example, cylindrical). The dense region 93 is in contact with the porous region 91 or is continuous with the porous region 91 . As shown in FIG. 2B, the dense region 93 surrounds the outer periphery of the porous region 91 when projected onto a plane (XY plane) perpendicular to the Z direction. The dense region 93 has a cylindrical shape (for example, a cylindrical shape) surrounding the side surface 91s of the porous region 91. In other words, the porous region 91 is provided so as to penetrate the dense region 93 in the Z direction. Gas flowing into the through hole 15 from the gas introduction path 53 passes through a plurality of holes 96 provided in the porous region 91 and is supplied to the groove 14 .

By providing the porous portion 90 having such a porous region 91, the resistance to arc discharge can be improved while ensuring the flow rate of gas flowing into the through hole 15. Further, since the porous portion 90 has the dense region 93, the rigidity (mechanical strength) of the porous portion 90 can be improved.

When the porous portion 90 is provided on the ceramic dielectric substrate 11, the porous portion may be integrated with the ceramic dielectric substrate 11, for example. The state in which two members are integrated is a state in which the two members are chemically bonded. No material (eg, adhesive) is provided between the two members to secure one member to the other member. That is, in this example, no other member such as an adhesive is provided between the porous portion 90 and the ceramic dielectric substrate 11, and the porous portion 90 and the ceramic dielectric substrate 11 are integrated. ing.

In this way, when the porous portion 90 is fixed to the ceramic dielectric substrate 11 by being integrated with the ceramic dielectric substrate 11, the porous portion 90 is fixed to the ceramic dielectric substrate 11 with an adhesive or the like. The strength of the electrostatic chuck 110 can be improved compared to when the electrostatic chuck 110 is fixed. For example, deterioration of the electrostatic chuck due to corrosion or erosion of the adhesive does not occur.

When the porous portion 90 and the ceramic dielectric substrate 11 are integrated, a force may be applied from the ceramic dielectric substrate 11 to the side surface of the outer periphery of the porous portion 90 . On the other hand, when a plurality of holes are provided in the porous portion 90 in order to ensure the flow rate of gas, the mechanical strength of the porous portion 90 decreases. Therefore, when the porous portion 90 is integrated with the ceramic dielectric substrate 11, the porous portion 90 may be damaged by the force applied to the porous portion 90 from the ceramic dielectric substrate 11.

On the other hand, since the porous portion 90 has the dense region 93, the rigidity (mechanical strength) of the porous portion 90 can be improved, and the porous portion 90 can be combined with the ceramic dielectric substrate 11. It can be integrated.

Note that in the embodiment, the porous portion 90 does not necessarily have to be integrated with the ceramic dielectric substrate 11. For example, as shown in FIG. 11, porous portion 90 may be attached to a ceramic dielectric substrate using an adhesive.

Further, the dense region 93 is located between the inner wall 15w of the ceramic dielectric substrate 11 forming the through hole 15 and the porous region 91. That is, a porous region 91 is provided inside the porous portion 90, and a dense region 93 is provided outside. By providing the dense region 93 outside the porous portion 90, the rigidity against the force applied to the porous portion 90 from the ceramic dielectric substrate 11 can be improved. Thereby, the porous portion 90 and the ceramic dielectric substrate 11 can be easily integrated. Further, for example, when an adhesive member 61 (see FIG. 11) is provided between the porous portion 90 and the ceramic dielectric substrate 11, it is possible to prevent gas passing through the porous portion 90 from coming into contact with the adhesive member 61 in a dense region. 93. Thereby, deterioration of the adhesive member 61 can be suppressed. Further, by providing the porous region 91 inside the porous portion 90, the through holes 15 of the ceramic dielectric substrate 11 can be prevented from being blocked by the dense region 93, and the flow rate of gas can be ensured.

The thickness of the dense region 93 (the length L0 between the side surface 91s of the porous region 91 and the side surface 93s of the dense region 93) is, for example, 100 μm or more and 1000 μm or less.

As the material of the porous portion 90, ceramic having insulation properties is used. Porous portion 90 (each of porous region 91 and dense region 93) contains at least one of aluminum oxide (Al ₂ O ₃ ), titanium oxide (TiO ₂ ), and yttrium oxide (Y ₂ O ₃ ). Thereby, high dielectric strength voltage and high rigidity of the porous portion 90 can be obtained.

For example, the porous portion 90 has one of aluminum oxide, titanium oxide, and yttrium oxide as a main component.
In this case, the purity of the aluminum oxide in the ceramic dielectric substrate 11 can be made higher than the purity of the aluminum oxide in the porous portion 90. In this way, performance such as plasma resistance of the electrostatic chuck 110 can be ensured, and the mechanical strength of the porous portion 90 can be ensured. For example, by incorporating a small amount of additive into the porous portion 90, sintering of the porous portion 90 is promoted, and pore control and mechanical strength can be ensured.

In this specification, the purity of ceramics such as aluminum oxide of the ceramic dielectric substrate 11 is measured by fluorescent X-ray analysis, ICP-AES (Inductively Coupled Plasma-Atomic Emission Spectrometry), etc. be able to.

For example, the material of the porous region 91 and the material of the dense region 93 are the same. However, the material of the porous region 91 may be different from the material of the dense region 93. The composition of the material in the porous region 91 may be different from the composition of the material in the dense region 93.

FIGS. 3A and 3B are schematic diagrams illustrating the porous portion 90 of the electrostatic chuck according to the embodiment.
3(a) is a plan view of the porous portion 90 viewed along the Z direction, and FIG. 3(b) is a sectional view of the porous portion 90 in the ZY plane.

As shown in FIGS. 3A and 3B, in the porous portion 90, the porous region 91 includes a plurality of sparse portions 94 (an example of a first sparse portion and a second sparse portion) and a dense portion 95. (An example of a first dense portion and a second dense portion). A plurality of dense portions 95 may be provided. Each of the plurality of sparse portions 94 has a plurality of holes 96. The dense portion 95 is denser than the sparse portion 94. That is, the dense portion 95 is a portion that has fewer pores than the sparse portion 94, or a portion that does not substantially have pores. The dimension of the dense portion 95 in the X or Y direction is smaller than the dimension of the dense region 93 in the X or Y direction. The porosity of the dense portion 95 is lower than that of the sparse portion 94. Therefore, the density of the dense portion 95 is higher than the density of the sparse portion 94. The porosity of the dense portion 95 may be the same as the porosity of the dense region 93. Since the dense portion 95 is denser than the sparse portion 94, the rigidity of the dense portion 95 is higher than that of the sparse portion 94.

The porosity of one sparse portion 94 is, for example, the ratio of the volume of the spaces (pores 96) included in the sparse portion 94 to the total volume of the sparse portion 94. The porosity of the dense portion 95 is, for example, the ratio of the volume of the spaces (holes 96) included in the dense portion 95 to the total volume of the dense portion 95. For example, the porosity of the sparse portion 94 is 20% or more and 60% or less, preferably 30% or more and 50% or less, and the porosity of the dense portion 95 is 0% or more and 5% or less.

Each of the plurality of sparse portions 94 extends in the Z direction. For example, each of the plurality of sparse portions 94 is columnar (cylindrical or polygonal columnar) and is provided so as to penetrate the porous region 91 in the Z direction. The dense portion 95 is located between the plurality of sparse portions 94. The dense portion 95 has a wall shape that partitions the sparse portions 94 adjacent to each other. As shown in FIG. 3(a), when projected onto a plane (XY plane) perpendicular to the Z direction, the dense portion 95 is provided so as to surround the outer periphery of each of the plurality of sparse portions 94. . The dense portion 95 is continuous with the dense region 93 on the outer periphery of the porous region 91 .

The number of sparse portions 94 provided within the porous region 91 is, for example, 50 or more and 1000 or less. As shown in FIG. 3A, when projected onto a plane (XY plane) perpendicular to the Z direction, the sparse portions 94 have approximately the same size. For example, when projected onto a plane perpendicular to the Z direction (XY plane), the plurality of sparse portions 94 are isotropically and uniformly distributed within the porous region 91. For example, the distance between adjacent sparse portions 94 (that is, the thickness of dense portions 95) is approximately constant.

For example, when projected onto a plane perpendicular to the Z direction (XY plane), the distance L11 between the side surface 93s of the dense region 93 and the sparse portion 94 closest to the side surface 93s among the plurality of sparse portions 94 is is 100 μm or more and 1000 μm or less.

In this way, by providing a plurality of sparse portions 94 and a dense portion 95 that is denser than the sparse portions 94 in the porous region 91, a plurality of pores are randomly distributed three-dimensionally within the porous region. Compared to this, it is possible to improve the rigidity of the porous portion 90 while ensuring resistance to arc discharge and a flow rate of gas flowing into the through hole 15.
For example, when the porosity of the porous region 91 increases, the flow rate of gas increases, but the resistance to arc discharge and rigidity decrease. On the other hand, even if the porosity is increased by providing a dense portion 95 in the porous region 91 whose dimension in the X direction or Y direction is smaller than the dimension in the X direction or Y direction of the dense region 93, the arc Decrease in resistance to discharge and rigidity can be suppressed.

For example, assume the smallest circle, ellipse, or polygon that includes all of the sparse portions 94 when projected onto a plane (XY plane) perpendicular to the Z direction. The inside of the circle, ellipse, or polygon can be considered as the porous region 91, and the outside of the circle, ellipse, or polygon can be considered as the dense region 93.

As explained above, the porous portion 90 includes a plurality of sparse portions 94 having a plurality of holes 96 including a first hole 96 and a second hole 96, and a dense portion having a density higher than that of the sparse portion 94. 95. Each of the plurality of sparse portions 94 extends in the Z direction. The dense portion 95 is located between the plurality of sparse portions 94. The sparse portion 94 has a wall portion 97 (an example of a first wall portion and a second wall portion) provided between the plurality of holes 96 (between the first hole 96 and the second hole 96). There is. In the X direction or the Y direction, the minimum dimension of the wall portion 97 can be smaller than the minimum dimension of the dense portion 95. In this way, since the porous portion 90 is provided with the sparse portion 94 and the dense portion 95 extending in the Z direction, the mechanical strength of the porous portion 90 is ensured while ensuring resistance to arc discharge and gas flow rate. The strength (rigidity) can be improved.

Further, as illustrated in FIG. 5, which will be described later, the dimensions of the plurality of holes 96 provided in each of the plurality of sparse portions 94 can be made smaller than the dimensions of the dense portions 95 in the X direction or the Y direction. can. In this way, the dimensions of the plurality of holes 96 can be made sufficiently small, so that the resistance to arc discharge can be further improved.

Further, the aspect ratio of the plurality of holes 96 provided in each of the plurality of sparse portions 94 can be 30 or more and 10,000 or less. In this way, resistance to arc discharge can be further improved. More preferably, the lower limit of the aspect ratio of the plurality of holes 96 is 100 or more, and the upper limit is 1,600 or less.

Further, in the X direction or the Y direction, the dimensions of the plurality of holes 96 provided in each of the plurality of sparse portions 94 can be 1 micrometer or more and 20 micrometers or less. In this way, the holes 96 having dimensions of 1 to 20 micrometers and extending in one direction can be arranged, so that high resistance to arc discharge can be achieved.

Further, as illustrated in FIGS. 6(a) and 6(b), which will be described later, the hole 96a is located at the center of the sparse portion 94 when projected onto a plane (XY plane) perpendicular to the Z direction. Among the plurality of holes 96, the number of holes 96b to 96g adjacent to and surrounding the hole 96a can be six. In this way, it becomes possible to arrange a plurality of holes with high isotropy and high density in plan view. Thereby, the rigidity of the porous portion 90 can be improved while ensuring resistance to arc discharge and a flow rate of flowing gas.

FIG. 4 is a schematic plan view illustrating the porous portion 90 of the electrostatic chuck according to the embodiment.
FIG. 4 shows a part of the porous portion 90 as seen along the Z direction, and corresponds to an enlarged view of FIG. 3(a).
When projected onto a plane (XY plane) perpendicular to the Z direction, each of the plurality of sparse portions 94 has a substantially hexagonal shape (substantially regular hexagonal shape). When projected onto a plane perpendicular to the Z direction (XY plane), the plurality of sparse portions 94 include a sparse portion 94a located at the center of the porous region 91, and six sparse portions 94() surrounding the sparse portion 94a. sparse portions 94b to 94g).

The sparse portions 94b to 94g are adjacent to the sparse portion 94a. The sparse portions 94b to 94g are provided closest to the sparse portion 94a among the plurality of sparse portions 94.

The sparse portion 94b and the sparse portion 94c are aligned with the sparse portion 94a in the X direction. That is, the sparse portion 94a is located between the sparse portion 94b and the sparse portion 94c.

The length L1 of the sparse portion 94a along the X direction (the diameter of the sparse portion 94a) is longer than the length L2 between the sparse portion 94a and the sparse portion 94b along the X direction, and the sparse portion 94a and the sparse portion 94c along the X direction.

Note that each of the length L2 and the length L3 corresponds to the thickness of the dense portion 95. That is, the length L2 is the length along the X direction of the dense portion 95 between the sparse portion 94a and the sparse portion 94b. The length L3 is the length along the X direction of the dense portion 95 between the sparse portion 94a and the sparse portion 94c. The length L2 and the length L3 can be substantially the same. For example, the length L2 can be 0.5 times or more and 2.0 times or less the length L3.

Moreover, the length L1 can be made substantially the same as the length L4 (diameter of the sparse portion 94b) along the X direction of the sparse portion 94b. The length L1 can be approximately the same as the length L5 (diameter of the sparse portion 95c) along the X direction of the sparse portion 94c. For example, each of the length L4 and the length L5 can be set to 0.5 times or more and 2.0 times or less of the length L1.

In this way, the sparse portion 94a is adjacent to and surrounded by six of the sparse portions 94. That is, when projected onto a plane perpendicular to the Z direction (XY plane), the number of sparse portions 94 adjacent to one sparse portion 94 at the center of the porous region 91 is six. Thereby, it is possible to arrange a plurality of sparse portions 94 with high isotropy and high density in plan view. Thereby, the rigidity of the porous portion 90 can be improved while ensuring resistance to arc discharge and a flow rate of gas flowing into the through hole 15. Further, variations in resistance to arc discharge, variations in the flow rate of gas flowing into the through holes 15, and variations in the rigidity of the porous portion 90 can be suppressed.

The diameter of the sparse portion 94 (length L1, L4, L5, etc.) is, for example, 50 μm or more and 500 μm or less. The thickness (length L2 or L3, etc.) of the dense portion 95 is, for example, 10 μm or more and 100 μm or less. The diameter of the sparse portion 94 is greater than the thickness of the dense portion 95. Further, as described above, the thickness of the dense portion 95 is smaller than the thickness of the dense region 93.

FIG. 5 is a schematic plan view illustrating the porous portion 90 of the electrostatic chuck according to the embodiment.
FIG. 5 shows a portion of the porous portion 90 as viewed along the Z direction. FIG. 5 is an enlarged view of the vicinity of one sparse portion 94.
As shown in FIG. 5, in this example, the sparse portion 94 includes a plurality of holes 96 and a wall portion 97 provided between the plurality of holes 96.

Each of the plurality of holes 96 extends in the Z direction. Each of the plurality of holes 96 has a capillary shape (one-dimensional capillary structure) extending in one direction, and penetrates the sparse portion 94 in the Z direction. The wall portion 97 has a wall shape that partitions the holes 96 adjacent to each other. As shown in FIG. 5, the wall portion 97 is provided so as to surround the outer periphery of each of the plurality of holes 96 when projected onto a plane (XY plane) perpendicular to the Z direction. The wall portion 97 is continuous with the dense portion 95 on the outer periphery of the sparse portion 94 .

The number of holes 96 provided in one sparse portion 94 is, for example, 50 or more and 1000 or less. As shown in FIG. 5, the plurality of holes 96 have approximately the same size when projected onto a plane (XY plane) perpendicular to the Z direction. For example, when projected onto a plane perpendicular to the Z direction (XY plane), the plurality of holes 96 are isotropically and uniformly distributed within the sparse portion 94. For example, the distance between adjacent holes 96 (that is, the thickness of wall portion 97) is approximately constant.

In this way, by arranging the holes 96 extending in one direction within the sparse portion 94, the resistance against arc discharge is higher than when a plurality of holes are randomly distributed three-dimensionally within the sparse portion. This can be achieved with little variation.

Here, the "capillary structure" of the plurality of holes 96 will be further explained.
In recent years, circuit line widths have become thinner and circuit pitches have become finer with the aim of increasing the degree of integration of semiconductor devices. Higher power is being applied to the electrostatic chuck, and temperature control of the object W at a higher level is required. Against this background, there is a need to secure a sufficient gas flow rate while reliably suppressing arc discharge even in a high-power environment, and to control the flow rate with high precision. In the electrostatic chuck 110 according to the present embodiment, the hole diameter (hole 96 The diameter of the hole 96 is made small, for example, to the level of several to tens of micrometers (the details of the diameter of the hole 96 will be described later). When the diameter becomes small to this level, it may become difficult to control the gas flow rate. Therefore, in the present invention, for example, the shape of the hole 96 is further devised so as to extend along the Z direction. Specifically, in the past, prevention of arc discharge was achieved by ensuring a flow rate with relatively large holes and making the shape three-dimensionally complex. On the other hand, in the present invention, prevention of arc discharge is achieved by making the diameter of the hole 96 minute, for example, at the level of several to tens of micrometers, and conversely, the flow rate is ensured by simplifying its shape. . In other words, the present invention was conceived based on an idea completely different from the conventional one.

Note that the shape of the sparse portion 94 is not limited to a hexagon, but may be a circle (or ellipse) or other polygon. For example, assume the smallest circle, ellipse, or polygon that includes all of the plurality of holes 96 arranged at intervals of 10 μm or less when projected onto a plane (XY plane) perpendicular to the Z direction. The inside of the circle, ellipse, or polygon can be considered a sparse portion 94, and the outside of the circle, ellipse, or polygon can be considered a dense portion 95.

FIGS. 6A and 6B are schematic plan views illustrating the porous portion 90 of the electrostatic chuck according to the embodiment.
6(a) and 6(b) are enlarged views showing a part of the porous portion 90 as seen along the Z direction, and showing the holes 96 in one sparse portion 94. FIG.

As shown in FIG. 6(a), when projected onto a plane perpendicular to the Z direction (XY plane), the plurality of holes 96 include a hole 96a located at the center of the sparse portion 94, and a hole 96a located at the center of the sparse portion 94. It has six surrounding holes 96 (holes 96b to 96g). Holes 96b to 96g are adjacent to hole 96a. The holes 96b to 96g are the holes 96 closest to the hole 96a among the plurality of holes 96.

The holes 96b and 96c are aligned with the hole 96a in the X direction. That is, hole 96a is located between hole 96b and hole 96c.

For example, the length L6 of the hole 96a along the X direction (the diameter of the hole 96a) is longer than the length L7 between the holes 96a and 96b along the X direction, and the length L6 between the holes 96a and 96c is longer than the length L8 along the X direction.

Note that each of the length L7 and the length L8 corresponds to the thickness of the wall portion 97. That is, the length L7 is the length of the wall portion 97 between the hole 96a and the hole 96b along the X direction. Length L8 is the length of wall portion 97 between hole 96a and hole 96c along the X direction. The length L7 and the length L8 can be substantially the same. For example, the length L7 can be 0.5 or more and 2.0 times or less the length L8.

Moreover, the length L6 can be made substantially the same as the length L9 (diameter of the hole 96b) along the X direction of the hole 96b. The length L6 can be approximately the same as the length L10 (diameter of the hole 96c) along the X direction of the hole 96c. For example, each of the length L9 and the length L10 can be set to 0.5 times or more and 2.0 times or less of the length L6.

For example, smaller hole diameters improve arc discharge resistance and rigidity. On the other hand, if the hole diameter is large, the gas flow rate can be increased. The diameter of the hole 96 (length L6, L9, or L10, etc.) is, for example, 1 micrometer (μm) or more and 20 μm or less. By arranging holes extending in one direction and having a diameter of 1 to 20 μm, high resistance to arc discharge can be achieved with little variation. More preferably, the diameter of the hole 96 is 3 μm or more and 10 μm or less.

Here, a method for measuring the diameter of the hole 96 will be explained. Images are acquired using a scanning electron microscope (eg, Hitachi High Technologies, S-3000) at a magnification of 1000x or more. Using commercially available image analysis software, the equivalent circle diameters of 100 holes 96 are calculated, and the average value thereof is taken as the diameter of the hole 96.

It is further preferable to suppress variations in the diameters of the plurality of holes 96. By reducing the variation in diameter, it becomes possible to more precisely control the flow rate and dielectric strength of the flowing gas. As the variation in the diameters of the plurality of holes 96, the cumulative distribution of the equivalent circle diameters of 100 holes obtained in calculating the diameters of the holes 96 can be used. Specifically, we applied the concept of particle diameter D50 (median diameter) when cumulative distribution is 50 vol% and particle diameter D90 when cumulative distribution is 90 vol%, which are generally used for particle size distribution measurement, and plotted the horizontal axis as pore diameter (μm). ), using a cumulative distribution graph of the pores 96 with the vertical axis as the relative pore volume (%), the pore diameter when the cumulative distribution of the pore size is 50 vol% (corresponding to the D50 diameter) and the pore diameter when the cumulative distribution is 90 vol% (D90 (equivalent to the diameter). It is preferable that variations in the diameters of the plurality of holes 96 are suppressed to such an extent that the relationship D50:D90≦1:2 is satisfied.

The thickness of the wall portion 97 (lengths L7, L8, etc.) is, for example, 1 μm or more and 10 μm or less. The thickness of the wall portion 97 is thinner than the thickness of the dense portion 95.

In this way, the hole 96a is adjacent to and surrounded by six of the holes 96. That is, when projected onto a plane perpendicular to the Z direction (XY plane), the number of holes 96 adjacent to one hole 96 at the center of the sparse portion 94 is six. Thereby, it is possible to arrange a plurality of holes 96 with high isotropy and high density in plan view. Thereby, the rigidity of the porous portion 90 can be improved while ensuring resistance to arc discharge and a flow rate of gas flowing into the through hole 15. Further, variations in resistance to arc discharge, variations in the flow rate of gas flowing into the through holes 15, and variations in the rigidity of the porous portion 90 can be suppressed.

FIG. 6(b) shows another example of the arrangement of the plurality of holes 96 within the sparse portion 94. As shown in FIG. 6(b), in this example, the plurality of holes 96 are arranged concentrically around the hole 96a. This makes it possible to arrange a plurality of holes with high isotropy and high density when projected onto a plane (XY plane) perpendicular to the Z direction.

Further, each of the lengths L0 to L10 can be measured by observation using a microscope such as a scanning electron microscope.

Evaluation of porosity in this specification will be explained. Here, evaluation of the porosity in the porous portion 90 will be explained as an example.
An image like the plan view of FIG. 3(a) is acquired, and the ratio R1 of the plurality of sparse portions 94 occupying the porous region 91 is calculated by image analysis. A scanning electron microscope (for example, Hitachi High Technologies, S-3000) is used to acquire images. A BSE image is acquired with an accelerating voltage of 15 kV and a magnification of 30 times. For example, the image size is 1280×960 pixels, and the image gradation is 256 gradations.

Image analysis software (for example, Win-ROOF Ver. 6.5 (Mitani Corporation)) is used to calculate the ratio R1 of the plurality of sparse portions 94 in the porous region 91.
The ratio R1 can be calculated as follows using Win-ROOF Ver. 6.5.
The evaluation range ROI1 (see FIG. 3(a)) is defined as the smallest circle (or ellipse) that includes all the sparse portions 94.
Binarization processing is performed using a single threshold value (for example, 0), and the area S1 of the evaluation range ROI1 is calculated.
Binarization processing is performed using two threshold values (for example, 0 and 136), and the total area S2 of the plurality of sparse portions 94 within the evaluation range ROI1 is calculated. At this time, hole-filling processing in the sparse portion 94 and deletion of small areas considered to be noise (threshold value: 0.002 or less) are performed. Further, the two threshold values are adjusted as appropriate depending on the brightness and contrast of the image.
A ratio R1 is calculated as the ratio of the area S2 to the area S1. That is, the ratio R1 (%)=(area S2)/(area S1)×100.

In the embodiment, the ratio R1 of the plurality of sparse portions 94 in the porous region 91 is, for example, 40% or more and 70% or less, preferably 50% or more and 70% or less. The ratio R1 is, for example, about 60%.

An image like the plan view of FIG. 5 is acquired, and the ratio R2 of the plurality of holes 96 to the sparse portion 94 is calculated by image analysis. The ratio R2 corresponds to the porosity of the sparse portion 94, for example. A scanning electron microscope (eg, Hitachi High Technologies, S-3000) is used to acquire images. A BSE image is acquired with an accelerating voltage of 15 kV and a magnification of 600 times. For example, the image size is 1280×960 pixels, and the image gradation is 256 gradations.

To calculate the ratio R2 of the plurality of holes 96 in the sparse portion 94, image analysis software (for example, Win-ROOF Ver. 6.5 (Mitani Shoji)) is used.
The ratio R1 can be calculated as follows using Win-ROOF Ver. 6.5.
The evaluation range ROI2 (see FIG. 5) is a hexagon that approximates the shape of the sparse portion 94. All the holes 96 provided in one sparse portion 94 are included in the evaluation range ROI2.
Binarization processing is performed using a single threshold value (for example, 0), and the area S3 of the evaluation range ROI2 is calculated.
Binarization processing is performed using two threshold values (for example, 0 and 96), and the total area S4 of the plurality of holes 96 within the evaluation range ROI2 is calculated. At this time, the process of filling in the holes 96 and the deletion of small areas considered to be noise (threshold value: 1 or less) are performed. Further, the two threshold values are adjusted as appropriate depending on the brightness and contrast of the image.
A ratio R2 is calculated as the ratio of the area S4 to the area S3. That is, the ratio R2 (%)=(area S4)/(area S3)×100.

In the embodiment, the ratio R2 of the plurality of pores 96 in the sparse portion 94 (porosity of the sparse portion 94) is, for example, 20% or more and 60% or less, preferably 30% or more and 50% or less. The ratio R2 is, for example, about 40%.

The porosity of the porous region 91 corresponds to, for example, the product of the ratio R1 of the plurality of sparse portions 94 in the porous region 91 and the ratio R2 of the plurality of pores 96 in the sparse region 94. For example, when the ratio R1 is 60% and the ratio R2 is 40%, the porosity of the porous region 91 can be calculated to be about 24%.

By using the porous portion 90 having the porous region 91 having such a porosity, it is possible to improve the dielectric strength voltage while ensuring the flow rate of the gas flowing into the through hole 15.

Similarly, the porosity of the ceramic dielectric substrate 11 and the porous portion 70 can be calculated. Note that the magnification of the scanning electron microscope is preferably selected as appropriate in the range of, for example, several tens of times to several thousand times, depending on the object to be observed.

FIGS. 7A and 7B are schematic diagrams illustrating a porous portion 90 according to another embodiment.
FIG. 7(a) is a plan view of the porous portion 90 viewed along the Z direction, and FIG. 7(b) corresponds to a partially enlarged view of FIG. 7(a).
As shown in FIGS. 7(a) and 7(b), in this example, the planar shape of the sparse portion 94 is circular. In this way, the planar shape of the sparse portion 94 does not have to be hexagonal.

FIG. 8 is a schematic cross-sectional view illustrating the electrostatic chuck according to the embodiment.
FIG. 8 corresponds to an enlarged view of region B shown in FIG. That is, FIG. 8 shows the vicinity of the interface F1 between the porous portion 90 (dense region 93) and the ceramic dielectric substrate 11. As shown in FIG. In this example, aluminum oxide is used as the material for the porous portion 90 and the ceramic dielectric substrate 11.

As shown in FIG. 8, the porous portion 90 includes a first region 90p located on the ceramic dielectric substrate 11 side in the X direction or the Y direction, and a second region continuous with the first region 90p in the X direction or the Y direction. It has 90q. The first region 90p and the second region 90q are part of the dense region 93 of the porous portion 90.

The first region 90p is located between the second region 90q and the ceramic dielectric substrate 11 in the X direction or the Y direction. The first region 90p is a region approximately 40 to 60 μm from the interface F1 in the X direction or the Y direction. That is, the width W1 of the first region 90p along the X direction or the Y direction (the length of the first region 90p in the direction perpendicular to the interface F1) is, for example, 40 μm or more and 60 μm or less.

Further, the ceramic dielectric substrate 11 has a first substrate region 11p located on the side of the porous portion 90 (first region 90p) in the X direction or the Y direction, and a first substrate region 11p that is continuous with the first substrate region 11p in the X direction or the Y direction. It has a second substrate region 11q. The first region 90p and the first substrate region 11p are provided in contact with each other. The first substrate region 11p is located between the second substrate region 11q and the porous portion 90 in the X direction or the Y direction. The first substrate region 11p is a region approximately 40 to 60 μm from the interface F1 in the X direction or the Y direction. That is, the width W2 of the first substrate region 11p along the X direction or the Y direction (the length of the first substrate region 11p in the direction perpendicular to the interface F1) is, for example, 40 μm or more and 60 μm or less.

FIGS. 9A and 9B are schematic cross-sectional views illustrating the electrostatic chuck according to the embodiment.
FIG. 9A is an enlarged view of a part of the first region 90p shown in FIG. 8. FIG. 9(b) is an enlarged view of a part of the first substrate region 11p shown in FIG.
As shown in FIG. 9A, the first region 90p includes a plurality of particles g1 (crystal grains). Further, as shown in FIG. 9(b), the first substrate region 11p includes a plurality of particles g2 (crystal grains).

The average particle diameter (the average value of the diameters of the plurality of particles g1) in the first region 90p is different from the average particle diameter (the average value of the diameters of the plurality of particles g2) in the first substrate region 11p.

Due to the difference between the average particle diameter in the first region 90p and the average particle diameter in the first substrate region 11p, the bonding strength between the crystal grains of the porous portion 90 and the crystal grains of the ceramic dielectric substrate 11 is increased at the interface F1. (interface strength) can be improved. For example, peeling of the porous portion 90 from the ceramic dielectric substrate 11 and shedding of crystal grains can be suppressed.

Note that the average value of the equivalent circular diameters of crystal grains in cross-sectional images such as those shown in FIGS. 9(a) and 9(b) can be used as the average particle diameter. The equivalent circle diameter is the diameter of a circle having the same area as the target planar shape.

It is also preferable that the ceramic dielectric substrate 11 and the porous portion 90 are integrated. The porous portion 90 is fixed to the ceramic dielectric substrate 11 by being integrated with the ceramic dielectric substrate 11 . Thereby, the strength of the electrostatic chuck can be improved compared to the case where the porous portion 90 is fixed to the ceramic dielectric substrate 11 with an adhesive or the like. For example, deterioration of the electrostatic chuck due to corrosion or erosion of the adhesive can be suppressed.

In this example, the average particle diameter in the first substrate region 11p is smaller than the average particle diameter in the first region 90p. Since the particle size in the first substrate region 11p is small, the bonding strength between the porous portion 90 and the ceramic dielectric substrate can be improved at the interface between the porous portion 90 and the ceramic dielectric substrate. In addition, the small particle size in the first substrate region increases the strength of the ceramic dielectric substrate 11 and suppresses the risk of cracks and the like due to stress generated during manufacturing and processing. For example, the average particle diameter in the first region 90p is 3 μm or more and 5 μm or less. For example, the average particle diameter in the first substrate region 11p is 0.5 μm or more and 2 μm or less. The average particle diameter in the first substrate region 11p is 1.1 times or more and 5 times or less than the average particle diameter in the first region 90p.

Further, for example, the average particle diameter in the first substrate region 11p is smaller than the average particle diameter in the second substrate region 11q. In the first substrate region 11p provided in contact with the first region 90p, it is preferable to increase the interface strength between the first region 90p and the first region 90p through interaction such as diffusion. On the other hand, in the second substrate region 11q, it is preferable that the original characteristics of the material of the ceramic dielectric substrate 11 are expressed. By making the average particle diameter in the first substrate region 11p smaller than the average particle diameter in the second substrate region 11q, the interface strength in the first substrate region 11p is secured and the ceramic dielectric substrate 11 in the second substrate region 11q is It is possible to achieve both characteristics.

The average particle diameter in the first region 90p may be smaller than the average particle diameter in the first substrate region 11p. Thereby, the bonding strength between the porous portion 90 and the ceramic dielectric substrate can be improved at the interface between the porous portion 90 and the ceramic dielectric substrate. Furthermore, since the average particle diameter in the first region 90p is small, the strength of the porous portion 90 is increased, so that drop-off of particles during processing can be suppressed, and particles can be reduced.

Further, in the same manner as described above, the average particle diameter in the first region 90p can be made smaller than the average particle diameter in the second substrate region 11q. In this way, the mechanical strength in the first region 90p can be improved.

Referring again to FIG. 2(a), the description of the structure of the electrostatic chuck 110 will be continued. The electrostatic chuck 110 may further include the porous portion 70 (first porous portion, second porous portion) as described above. The porous portion 70 does not have the plurality of sparse portions 94 and the plurality of dense portions 95 described in FIGS. 3 to 7. In this example, the porous portion 70 is provided in the base plate and is disposed facing the gas introduction path 53. The porous portion 70 can be provided, for example, between the porous portion 90 and the gas introduction path 53 in the Z direction. For example, the porous portion 70 is fitted into the base plate 50 on the ceramic dielectric substrate 11 side. As illustrated in FIG. 2A, for example, a counterbore portion 53a is provided on the ceramic dielectric substrate 11 side of the base plate 50. The counterbore portion 53a is provided in a cylindrical shape. By appropriately designing the inner diameter of the counterbore portion 53a, the porous portion 70 is fitted into the counterbore portion 53a. Note that, as described later, the porous portion 70 may be provided on the ceramic substrate 11.

In this example, the upper surface 70U of the porous portion 70 is exposed to the upper surface 50U of the base plate 50. The upper surface 70U of the porous portion 70 faces the lower surface 90L of the porous portion 90. In this example, a space SP is formed between the upper surface 70U of the porous portion 70 and the lower surface 90L of the porous portion 90. The first porous portion can be either the porous portion 90 or the porous portion 70. The second porous portion can be either the porous portion 90 or the porous portion 70.

The porous portion 70 includes a porous region 71 (an example of a first porous region and a second porous region) having a plurality of pores, and a dense region 72 (an example of a first dense region and a second dense region) that is denser than the porous region 71. example) and has. The porous region 71 is provided in a cylindrical shape (for example, cylindrical) and is fitted into the counterbore portion 53a. The shape of the porous portion 70 is preferably cylindrical, but is not limited to the cylindrical shape. The porous portion 70 is made of an insulating material. The material of the porous portion 70 is, for example, Al ₂ O ₃ , Y ₂ O ₃ , ZrO ₂ , MgO, SiC, AlN, or Si ₃ N ₄ . The material of the porous portion 70 may be glass such as SiO ₂ . The material of the porous portion 70 may be Al ₂ O ₃ --TiO ₂ , Al ₂ O ₃ --MgO, Al ₂ O ₃ --SiO ₂ , Al ₆ O ₁₃ Si ₂ , YAG, ZrSiO ₄ or the like.

The porosity of the porous region 71 is, for example, 20% or more and 60% or less. The density of the porous region 71 is, for example, 1.5 g/cm ³ or more and 3.0 g/cm ³ or less. Gas such as He flowing through the gas introduction path 53 passes through the plurality of holes 71p in the porous region 71 and is sent to the groove 14 from the through hole 15 provided in the ceramic dielectric substrate 11.

The dense region 72 has a portion made of, for example, a ceramic insulating film. A ceramic insulating film is provided between the porous region 71 and the gas introduction path 53. The ceramic insulating film is denser than the porous region 71. The porosity of the ceramic insulating film is, for example, 10% or less. The density of the ceramic insulating film is, for example, 3.0 g/cm ³ or more and 4.0 g/cm ³ or less. A ceramic insulating film is provided on the side surface of the porous portion 70.

Examples of materials used for the ceramic insulating film include Al ₂ O ₃ , Y ₂ O ₃ , ZrO ₂ , MgO, and the like. As the material of the ceramic insulating film, Al ₂ O ₃ --TiO ₂ , Al ₂ O ₃ --MgO, Al ₂ O ₃ --SiO ₂ , Al ₆ O ₁₃ Si ₂ , YAG, ZrSiO ₄ or the like may be used.

The ceramic insulating film can be formed, for example, on the side surface of the porous portion 70 by thermal spraying, PVD (Physical Vapor Deposition), CVD, sol-gel method, aerosol deposition method, or the like. The thickness of the ceramic insulating film is, for example, 0.05 mm or more and 0.5 mm or less.

The porosity of the ceramic dielectric substrate 11 is, for example, 1% or less. The density of the ceramic dielectric substrate 11 is, for example, 4.2 g/cm ³ .

The porosity of the ceramic dielectric substrate 11 and the porous portion 70 is measured using a scanning electron microscope, as described above. Density is measured based on JIS C 2141 5.4.3.

When the porous portion 70 is fitted into the counterbore portion 53a of the gas introduction path 53, the ceramic insulating film 72 and the base plate 50 are in contact with each other. That is, a porous portion 70 having a highly insulating porous region 71 and a dense region 73 is interposed between the through hole 15 that guides a gas such as He to the groove 14 and the metal base plate 50. . By using such a porous portion 70, higher insulation can be achieved than when only the porous region 71 is provided in the gas introduction path 53.

Further, the plurality of holes 71p provided in the porous portion 70 are more three-dimensionally dispersed than the plurality of holes 96 provided in the porous portion 90, and the proportion of holes penetrating in the Z direction is The number of porous portions 90 may be greater than the number of porous portions 70. By providing the porous portion 70 having a plurality of three-dimensionally dispersed holes 71p, higher dielectric strength can be obtained, thereby effectively suppressing the occurrence of arc discharge while smoothing the gas flow. can. Furthermore, as shown in FIG. 2(a), by providing the ceramic dielectric substrate 11 with a porous portion 90 having a large proportion of holes penetrating in the Z direction, arc discharge can be prevented even when the plasma density is high, for example. The outbreak can be suppressed more effectively.

The average value of the plurality of holes provided in the porous part (second porous part, porous part 70 in FIG. 2A) provided in the base plate 50 is It can be made larger than the average value of the plurality of pores provided in one porous part (the porous part 90 in FIG. 2A). In this way, since the porous portion with a large hole diameter is provided on the gas introduction path 53 side, the gas flow can be made smoother. Further, since the porous portion with a small hole diameter is provided on the side of the object to be adsorbed, the occurrence of arc discharge can be suppressed more effectively.
Further, in an example in which the porous portion 70 is provided on the base plate 50 and the porous portion 90 is provided on the ceramic dielectric substrate 11, the average value of the diameters of the plurality of holes 71p provided in the porous portion 70 is The diameter of the plurality of holes 96 provided in the mass part 90 can be made larger than the average value. In this way, since the porous portion 70 with a large pore diameter is provided, the gas flow can be made smoother. Further, since the porous portion 90 with a small hole diameter is provided on the side of the object to be attracted, it is possible to more effectively suppress the occurrence of arc discharge.
Furthermore, since variations in the diameters of the plurality of holes can be reduced, arc discharge can be suppressed more effectively.

FIG. 10 is a schematic cross-sectional view illustrating the porous portion 70 of the electrostatic chuck according to the embodiment. FIG. 10 is an enlarged view of a portion of the cross section of the porous region 71.
The plurality of holes 71p provided in the porous region 71 are three-dimensionally dispersed in the X direction, the Y direction, and the Z direction inside the porous region 71. In other words, the porous region 71 has a three-dimensional network structure in which the pores 71p extend in the X direction, the Y direction, and the Z direction. In the porous portion 70, the plurality of holes 71p are distributed, for example, randomly or uniformly in the porous region 71.

Since the plurality of holes 71p are three-dimensionally distributed, some of the plurality of holes 71p are also exposed on the surface of the porous region 71. Therefore, fine irregularities are formed on the surface of the porous region 71. In other words, the surface of the porous region 71 can be made rough. Depending on the surface roughness of the porous region 71, it is possible to easily form, for example, a ceramic insulating film (dense region 72) on the surface of the porous region 71. For example, the contact between the ceramic insulating film (dense region 72) and the porous region 71 is improved. Furthermore, peeling of the ceramic insulating film (dense region 72) can be suppressed.

For example, the average value of the diameters of the plurality of pores 71p provided in the porous region 71 is larger than the average value of the diameters of the plurality of pores 96 provided in the porous region 91. The diameter of the hole 71p is, for example, 10 μm or more and 50 μm or less. The flow rate of gas flowing into the through hole 15 can be controlled (restricted) by the porous region 91 in which the diameter of the hole 96 is small. Thereby, variations in gas flow rate caused by the ceramic porous body 71 can be suppressed. The diameter of the hole 71p and the diameter of the hole 96 can be measured using a scanning electron microscope, as described above.

FIG. 11 is a schematic cross-sectional view illustrating a porous portion 90 according to another embodiment.
Similar to FIG. 2(a), FIG. 11 illustrates the vicinity of the porous portion 90.
In this example, porous portion 90 is provided on ceramic dielectric substrate 11 . The porous portion 70 is provided in the base plate 50. That is, the porous portion 90 is used as the first porous portion. A porous portion 70 is used as the second porous portion. Note that the porous portion 90 may be provided on both the ceramic dielectric substrate 11 and the base plate 50.

In this example, an adhesive member 61 (adhesive) is provided between the porous portion 90 and the ceramic dielectric substrate 11. The porous portion 90 is bonded to the ceramic dielectric substrate 11 with an adhesive member 61. For example, the adhesive member 61 is provided between the side surface of the porous portion 90 (the side surface 93s of the dense region 93) and the inner wall 15w of the through hole 15. The porous portion 90 and the ceramic dielectric substrate 11 do not need to be in contact with each other.

For example, silicone adhesive is used for the adhesive member 61. The adhesive member 61 is, for example, an elastic member having elasticity. The elastic modulus of the adhesive member 61 is, for example, lower than the elastic modulus of the dense region 93 of the porous portion 90 and lower than the elastic modulus of the ceramic dielectric substrate 11.

In a structure in which the porous portion 90 and the ceramic dielectric substrate 11 are bonded by the adhesive member 61, the adhesive member 61 is used as a buffer material for the difference between the thermal contraction of the porous portion 90 and the thermal contraction of the ceramic dielectric substrate 11. It can be done.

FIGS. 12A and 12B are schematic cross-sectional views illustrating a porous portion 90 according to another embodiment.
In the embodiment described above (see FIG. 2), the porous portion 90 was provided on the ceramic dielectric substrate 11, and the porous portion 70 was provided on the base plate 50.
However, when using the porous portion 90, either the porous portion provided on the base plate 50 or the porous portion provided on the ceramic dielectric substrate 11 may be omitted.
For example, in the example shown in FIG. 12A, a porous portion 90 is provided on the ceramic dielectric substrate 11, and a gas introduction path 53 is provided on the base plate 50. In this way, the flow path resistance of gas such as He supplied to the porous portion 90 can be reduced.

Further, in the example shown in FIG. 12(b), the ceramic dielectric substrate 11 is provided with a hole 15b, and the porous portion 90 is provided in the base plate 50. In this way, the flow path resistance of gas such as He supplied to the porous portion 90 can be reduced.

Further, as shown in FIG. 12(a), at least a portion of the edge 53b of the opening of the gas introduction path 53 on the ceramic dielectric substrate 11 side can be configured in a curved line. For example, the edge 53b of the opening of the gas introduction path 53 can be provided with a so-called "R chamfering." In this case, the edge 53b of the opening of the gas introduction path 53 can be configured as a curved line with a radius of about 0.2 millimeters (mm).
As mentioned above, the base plate 50 is made of metal such as aluminum. Therefore, if the edge of the opening of the gas introduction path 53 is sharp, electric field concentration is likely to occur, and arc discharge may be likely to occur.

In the present embodiment, since at least a portion of the edge 53b of the opening of the gas introduction path 53 is formed in a curved line, electric field concentration can be suppressed, and arc discharge can be reduced.

FIGS. 13(a) to 13(d) are schematic cross-sectional views illustrating porous portions 90a and 70a according to other embodiments.
FIGS. 14(a) to 14(c) are schematic cross-sectional views illustrating porous portions 90a and 90b according to other embodiments.
13(a), a porous part 90a in which the dense region 93 of the porous part 90 is changed is provided on the ceramic dielectric substrate 11, and a porous part in which the dense region 72 of the porous part 70 is changed in the base plate 50. This is an example where 70a is provided. FIG. 14A shows a porous part 90a in which the dense region 93 of the porous part 90 is changed in the ceramic dielectric substrate 11 and the base plate 50, and a porous part 70b in which the dense region 72 of the porous part 70 is changed. This is an example where each of these is provided.
As shown in FIGS. 13(a), 13(b), and 14(a), in the porous portion 90a provided in the ceramic dielectric substrate 11, the porous region 91 further includes a dense portion 92a. That is, the porous portion 90a is obtained by adding a dense portion 92a to the porous portion 90 described above.

As shown in FIGS. 13(a) and 13(b), the dense portion 92a may have a plate shape (for example, a disk shape). As shown in FIG. 14(a), the dense portion 92a may also have a columnar shape (for example, a cylindrical shape). The material of the dense portion 92a can be, for example, the same as the material of the dense region 93 described above. The dense portion 92a is denser than the porous region 91. The density of the dense portion 92a and the dense region 93 may be approximately the same. When projected onto a plane (XY plane) perpendicular to the Z direction, the dense portion 92a and the hole portion 15b overlap. More preferably, the porous region 91 and the hole portion 15b are configured so as not to overlap. According to such a configuration, the generated current tends to flow bypassing the dense portion 92a. Therefore, the distance through which the current flows (conductive path) can be increased, making it difficult for electrons to be accelerated, which in turn can suppress the occurrence of arc discharge.

Furthermore, when projected onto a plane perpendicular to the Z direction (XY plane), the dimensions of the dense portion 92a are the same as the dimensions of the hole 15b, or the dimensions of the dense portion 92a are greater than the dimensions of the hole 15b. It is also preferable to make it larger. In this way, the current flowing inside the hole 15b can be guided to the dense portion 92a. Therefore, the distance through which current flows (conductive path) can be effectively lengthened.

In this example, a porous region 91 is provided around the dense portion 92a when projected onto a plane perpendicular to the Z direction. The dense portion 92a is disposed at a position facing the hole portion 15b to enhance resistance to arc discharge, and the porous region 91 is formed around the dense portion 92a, so that sufficient gas flow can be ensured. In other words, it is possible to both reduce arc discharge and smooth the flow of gas.

As shown in FIG. 13(a), the length of the dense portion 92a along the Z direction may be smaller than the length of the porous portion 90a along the Z direction, or as shown in FIG. 14(a), , may be approximately the same as the length of the porous portion 90a along the Z direction. By increasing the length of the dense portion 92a along the Z direction, the occurrence of arc discharge can be more effectively suppressed. By making the length of the dense portion 92a along the Z direction smaller than the length of the porous portion 90a along the Z direction, gas flow can be made smoother.

The dense portion 92a may be composed of a dense body having substantially no pores, or may have a plurality of pores as long as it is denser than the porous region 91. When the dense portion 92a has a plurality of pores, it is preferable that the diameter of the pores be smaller than the diameter of the pores that the porous region 91 has. The porosity (%) of the dense portion 92a can be lower than the porosity (%) of the porous region 91. Therefore, the density (grams/cubic centimeter: g/cm ³ ) of the dense portion 92a can be made higher than the density (g/cm ³ ) of the porous region 91. The porosity of the dense portion 92a can be, for example, similar to the porosity of the dense region 93 described above.

Here, arc discharge is often caused by current flowing inside the hole 15b from the ceramic dielectric substrate 11 side toward the base plate 50 side. Therefore, if the dense portion 92a having a low porosity is provided near the hole 15b, the current 200 will flow around the dense portion 92a, as shown in FIGS. 13(a) and 14(a). try Therefore, the distance through which the current 200 flows (conductive path) can be lengthened, making it difficult for electrons to be accelerated, thereby suppressing the occurrence of arc discharge.

Further, as shown in FIG. 13A, for example, a porous portion 70a provided in the base plate 50, in which the porous region 71 further includes a dense portion 92b, may be used.
Alternatively, as shown in FIG. 14(a), the porous portion 90a may be provided on the ceramic dielectric substrate 11, and the porous portion 70b may be provided on the base plate 50. In the porous portion 70b, the porous region 71 further includes a dense portion 92b. That is, the porous portion 70b is obtained by adding a dense portion 92b to the porous portion 70 described above.
That is, a dense portion 92b may be further added to the porous portion 70 or the porous portion 90 provided in the base plate 50.

At least one dense portion 92b can be provided. As shown in FIGS. 13(c) and 14(b), a plurality of dense portions 92b having a plate shape (for example, a disk shape) or a column shape (for example, a cylindrical shape) can be provided. As shown in FIGS. 13(d) and 14(c), a dense portion 92b having an annular shape (for example, an annular shape) or a cylindrical shape (for example, a cylindrical shape) can also be provided. The material, density, porosity, etc. of the dense portion 92b can be the same as those of the dense portion 92a.

When projected onto a plane perpendicular to the Z direction (XY plane), at least a portion of the dense portion (for example, the dense portion 92b) of the porous portion provided on the base plate 50 is located on the ceramic dielectric substrate 11. It is preferable to overlap the dense portion (for example, the dense portion 92a) of the porous portion. According to such a configuration, for example, a current flowing around the dense portion 92a in the porous portion 90a (porous portion on the ceramic dielectric substrate 11 side) flows through the porous portions 70, 90b provided with the dense portion 92b. When flowing through (the porous portion on the base plate 50 side), the flow further bypasses the dense portion 92b without flowing through the porous regions (for example, the porous regions 71, 91) of the porous portion provided on the base plate 50 side. do. Therefore, the distance through which the current flows (conductive path) can be further increased, making it even harder for electrons to be accelerated, thereby effectively suppressing the occurrence of arc discharge.

FIGS. 15(a) and 15(b) are schematic cross-sectional views illustrating a porous portion according to another embodiment.
As shown in FIGS. 15A and 15B, the dense portion 92a and the dense portion 92b can be made to overlap when projected onto a plane (XY plane) perpendicular to the Z direction. Further, the dense portion 92a and the dense portion 92b may be in contact with each other when projected onto a plane (XY plane) perpendicular to the Z direction. Note that when projected onto a plane perpendicular to the Z direction (XY plane), if the gap between the dense portion 92a and the dense portion 92b is small, the current will not flow between the dense portion 92a and the dense portion 92b. flow can be suppressed. Therefore, a gap may be provided between the dense portion 92a and the dense portion 92b as long as it is possible to suppress the flow of current between the dense portion 92a and the dense portion 92b.
In this way, it is possible to suppress the current flowing through the porous portion 90a from flowing through the porous portion 70a without passing through the dense portion 92b. Therefore, the distance through which current flows (conductive path) can be effectively lengthened.

Further, as shown in FIGS. 15A and 15B, it is preferable that the dense portion 92b and the dense region 93 overlap when projected onto a plane (XY plane) perpendicular to the Z direction. Further, the dense portion 92b and the dense region 93 may be in contact with each other when projected onto a plane (XY plane) perpendicular to the Z direction. In this way, the distance through which the current flows (conductive path) can be further increased, making it even harder for electrons to be accelerated, thereby effectively suppressing the occurrence of arc discharge.

FIG. 16 is a schematic cross-sectional view illustrating an electrostatic chuck according to another embodiment.
17A and 17B correspond to enlarged views of region C shown in FIG. 16.
As shown in FIGS. 16 and 17(a) and (b), the electrostatic chuck 110a includes a ceramic dielectric substrate 11c and a base plate 50. That is, the ceramic dielectric substrate 11c is not provided with a porous portion (the porous portion 70 or the porous portion 90).
A plurality of holes 16 are directly provided in the ceramic dielectric substrate 11c. The plurality of holes 16 can be formed in the ceramic dielectric substrate 11c by, for example, laser irradiation or ultrasonic processing. In this example, one end of the plurality of holes 16 is located on the surface 14a of the groove 14. The other ends of the plurality of holes 16 are located on the second main surface 11b of the ceramic dielectric substrate 11c. That is, the plurality of holes 16 penetrate the ceramic dielectric substrate 11c in the Z direction.

As shown in FIGS. 17(a) and 17(b), the base plate 50 can be provided with a porous portion (eg, porous portion 70a). Note that the base plate 50 may be provided with a porous portion 90b. Further, as illustrated in FIG. 12(a), the base plate 50 may not be provided with the porous portion 70 or the porous portion 90, but may be provided with the gas introduction path 53.

Further, as shown in FIGS. 17(a) and 17(b), the upper surface 70U of the porous portion 70 provided on the base plate 50 (or the upper surface 90U of the porous portion 90) and the second main surface of the ceramic dielectric substrate 11c It does not need to be in contact with the surface 11b. Furthermore, as described above, at least a portion of the edge 53b of the opening of the gas introduction path 53 on the ceramic dielectric substrate 11c side can be formed into a curved line.

By providing a plurality of holes 16 in the ceramic dielectric substrate 11c, the flow rate of gas supplied between the back surface of the object W placed on the electrostatic chuck 110a and the first main surface 11a including the groove 14 can be ensured. At the same time, resistance to arc discharge can be improved.

The length of the dense portion 92b along the Z direction can be made smaller than the length of the porous portions 70a and 90b along the Z direction. Further, the length of the dense portion 92b along the Z direction may be approximately the same as the length of the porous portions 70a and 90b along the Z direction. By shortening the length of the dense portion 92b in the Z direction, gas flow can be made smoother. By increasing the length of the dense portion 92b in the Z direction, the occurrence of arc discharge can be more effectively suppressed.

When projected onto a plane perpendicular to the Z direction (XY plane), at least one of the plurality of holes 16 can be made to overlap with the dense portion 92b. The material, density, porosity, etc. of the plurality of dense parts 92b are, for example, as described above.
As shown in FIG. 17(a), the base plate 50 may be provided with a porous portion 70a having a plurality of dense portions 92b. As shown in FIG. 17(b), the base plate 50 may be provided with a porous portion 90b having a plurality of dense portions 92b.

FIG. 18 is a schematic cross-sectional view illustrating a plurality of holes 16h according to another embodiment.
The plurality of holes 16h can be formed by irradiating the ceramic dielectric substrate 11 with a laser, ultrasonic processing, or the like.
As shown in FIG. 18, at least one of the plurality of holes 16h provided in the ceramic dielectric substrate 11 has a first portion 16h1 that opens to the groove portion 14 and a second portion 16h2 that opens to the second main surface 11b. , can have. In the X direction or the Y direction, the dimensions of the first portion 16h1 can be made smaller than the dimensions of the second portion 16h2. In the X direction or the Y direction, at least one of the plurality of holes 16h can have an opening size D4 on the surface 14a side of the groove 14 smaller than an opening size D3 on the base plate 50 side. Although the hole 16h having a stepped structure is illustrated in FIG. 18, the hole 16h may have a tapered structure. For example, the opening dimension D4 can be between 0.01 millimeters (mm) and 0.1 millimeters (mm) in diameter. For example, the opening size D3 can be approximately 0.15 millimeters (mm) to 0.2 millimeters (mm) in diameter. If the opening size D4 is smaller than the opening size D3, the occurrence of arc discharge can be effectively suppressed.
Further, the aspect ratio of the hole 16h can be, for example, 3 to 60. In calculating the aspect ratio, "vertical" is the length of the hole 16h in the Z direction in FIG. 18, and "horizontal" is the length of the hole 16h in the X direction on the upper surface (surface 14a) of the hole 16h, The length of the hole 16h in the X direction on the second main surface 11b) is the average length of the hole 16h. Note that an optical microscope such as a laser microscope, a factory microscope, a digital microscope, etc. can be used to measure the length of the hole 16h in the X direction.
Further, the opening dimension D4 can be made smaller than the length L1 of the sparse portion 94a (L4 of the sparse portion 94b, length L5 of the sparse portion 94c) illustrated in FIG.

FIGS. 19(a) and 19(b) are schematic cross-sectional views illustrating the shape of the opening portion of the hole 16. FIG.
FIG. 19(b) corresponds to an enlarged view of region D shown in FIG. 19(a). In FIG. 19(a), the hole 16 does not have the opening size D3 in FIG. That is, the opening size of the hole 16 corresponds to the opening size D4 in FIG. 18.
As shown in FIGS. 19A and 19B, the edge 16i of the opening of the hole 16 on the first main surface 11a side (the surface 14a side of the groove 14) is the same as the edge 16i of the opening on the second main surface 11b side of the hole 16. It can be sloped more gently than the edge 16j. In this example, at least one of the plurality of holes 16 has an angle α between the opening edge 16i of the hole 16 on the groove 14 side and the surface 14a of the groove 14 on the second main surface 11b side. When the angle between the edge 16j of the opening on the second main surface 11b side and the second main surface 11b is β, "α<β" holds true. In this way, electric field concentration can be suppressed, and arc discharge can be reduced. Note that in this example, the edge 16i is formed of a straight line. However, the edge 16i may be composed of a curved line, or may be composed of a straight line and a curved line. When the edges 16i and 16j are curved, the radius of curvature of the edge 16i can be made larger than the radius of curvature of the edge 16j. When the edges 16i and 16j are formed of straight lines and curved lines, at least one of the relationship between the straight line parts and the relationship between the curved parts may satisfy the above-described relationship.

If the edge 16i is sloped more gently than the edge 16j, occurrence of chipping and electric field concentration can be suppressed. Therefore, the occurrence of arc discharge can be suppressed more effectively.
Although the shape of the opening of the hole 16 is illustrated as an example, the same applies to the case of the hole 16h having a stepped structure or a tapered structure.

FIG. 20 is a schematic cross-sectional view illustrating an electrostatic chuck according to another embodiment.
FIG. 20 corresponds to an enlarged view of area C shown in FIG.
Each of the plurality of holes 16 illustrated in FIG. 17(a) extends approximately in the Z direction. On the other hand, at least one of the plurality of holes 16 illustrated in FIG. 20 may be inclined with respect to the Z direction. If at least one of the plurality of holes 16 extends in a direction tilted with respect to the Z direction, electrons are considered to be less likely to be accelerated when a current flows inside the hole 16. Therefore, the occurrence of arc discharge can be effectively suppressed. According to the knowledge obtained by the present inventors, if the angle θ inclined with respect to the Z direction is set to be 5° or more and 30° or less, preferably 5° or more and 15° or less, the diameter of the hole 16 can be adjusted. It is possible to suppress the occurrence of arc discharge without reducing the .

Although the case of the hole 16 is illustrated as an example, the same applies to the case of the hole 16h having a stepped structure or a tapered structure.

The hole 16 inclined with respect to the Z direction can be directly formed by irradiating the ceramic dielectric substrate 11c with a laser or by ultrasonic machining. Therefore, the region provided with at least one hole 16 that is inclined with respect to the Z direction contains the same material as the ceramic dielectric substrate 11 .

FIG. 21 is a schematic cross-sectional view illustrating an electrostatic chuck according to another embodiment.
FIG. 21 corresponds to an enlarged view of area C shown in FIG. 16.
As shown in FIG. 21, in the porous portion 90b, the porous region 91 further includes a dense portion 92b. That is, the porous portion 90b is obtained by adding a dense portion 92b to the porous portion 90 described above. That is, a dense portion 92b may be further added to the porous portion 70 or the porous portion 90 provided in the base plate 50.
When projected onto a plane (XY plane) perpendicular to the Z direction, at least one of the openings of the plurality of holes 16 on the dense portion 92b side can overlap with the dense portion 92b. The material, density, porosity, etc. of the plurality of dense parts 92b are, for example, as described above.

FIG. 22 is a schematic cross-sectional view illustrating an electrostatic chuck according to another embodiment.
FIG. 23 corresponds to an enlarged view of area E shown in FIG. 22.
FIG. 24 is an enlarged view of another embodiment of region E shown in FIG. 22.
As shown in FIGS. 22, 23, and 24, the electrostatic chuck 110b includes a ceramic dielectric substrate 11d and a base plate 50. The ceramic dielectric substrate 11d is provided with a porous portion 90b or a porous portion 90a.
A plurality of holes 16 are provided in the ceramic dielectric substrate 11d. The plurality of holes 16 can be formed in the ceramic dielectric substrate 11d by, for example, laser irradiation or ultrasonic processing. In this example, one end of the plurality of holes 16 is located on the surface 14a of the groove 14. The other ends of the plurality of holes 16 are located on the bottom surface of the hole portion 15c. That is, the plurality of holes 16 penetrate the ceramic dielectric substrate 11d in the Z direction.

As shown in FIG. 23, at least one of the plurality of holes 16 can overlap the dense portion 92b when projected onto a plane (XY plane) perpendicular to the Z direction. The material, density, porosity, etc. of the dense portion 92b are, for example, as described above.
As shown in FIG. 24, at least one of the plurality of holes 16 can overlap the dense portion 92a when projected onto a plane (XY plane) perpendicular to the Z direction. The material, density, porosity, etc. of the dense portion 92a are, for example, as described above.

(processing equipment)
FIG. 25 is a schematic diagram illustrating a processing device 200 according to this embodiment.
As shown in FIG. 25, the processing apparatus 200 can be provided with an electrostatic chuck 110, a power source 210, a medium supply section 220, and a supply section 230.
The power source 210 is electrically connected to the electrode 12 provided on the electrostatic chuck 110. Power supply 210 can be, for example, a DC power supply. Power source 210 applies a predetermined voltage to electrode 12 . Further, the power supply 210 can be provided with a switch that switches between applying a voltage and stopping the application of the voltage.

The medium supply section 220 is connected to the input path 51 and the output path 52. The medium supply unit 220 may, for example, supply a liquid serving as a cooling medium or a heat-retaining medium.
The medium supply section 220 includes, for example, a storage section 221, a control valve 222, and a discharge section 223.

The storage section 221 can be, for example, a tank that stores liquid, factory piping, or the like. Further, the storage section 221 can be provided with a cooling device or a heating device that controls the temperature of the liquid. The storage section 221 can also be equipped with a pump or the like for pumping out liquid.

Control valve 222 is connected between input path 51 and storage section 221 . The control valve 222 can control the flow rate and/or pressure of the liquid. Further, the control valve 222 can also be configured to switch between supplying the liquid and stopping the supply.

The discharge section 223 is connected to the output path 52. The discharge part 223 can be a tank, a drain pipe, or the like that collects the liquid discharged from the output path 52. Note that the discharge section 223 is not necessarily required, and the liquid discharged from the output path 52 may be supplied to the storage section 221. In this way, the cooling medium or the heat insulating medium can be circulated, and resources can be saved.

The supply section 230 includes a gas supply section 231 and a gas control section 232.
The gas supply section 231 can be a high-pressure cylinder containing gas such as helium, factory piping, or the like. Note that although the case where one gas supply section 231 is provided is illustrated, a plurality of gas supply sections 231 may be provided.

The gas control section 232 is connected between the plurality of gas supply paths 53 and the gas supply section 231. The gas control unit 232 can control at least one of the flow rate and pressure of gas. Further, the gas control unit 232 may further have a function of switching between gas supply and gas supply stop. The gas control unit 232 can be, for example, a mass flow controller or a mass flow meter.

As shown in FIG. 25, a plurality of gas control sections 232 can be provided. For example, the gas control section 232 can be provided for each of a plurality of regions on the first main surface 11a. In this way, the gas to be supplied can be controlled for each region. In this case, the gas control section 232 may be provided for each of the plurality of gas supply paths 53. In this way, gas can be controlled more precisely in a plurality of regions. Although the case where a plurality of gas control units 232 are provided is illustrated, the number of gas control units 232 may be one as long as it can independently control the supply of gas in a plurality of supply systems.

Here, means for holding the object W include a vacuum chuck, a mechanical chuck, and the like. However, a vacuum chuck cannot be used in an environment where the pressure is lower than atmospheric pressure. Furthermore, if a mechanical chuck is used, there is a risk that the object W may be damaged or particles may be generated. Therefore, for example, electrostatic chucks are used in processing equipment used in semiconductor manufacturing processes.

In such a processing apparatus, it is necessary to isolate the processing space from the external environment. Therefore, the processing apparatus 200 can further include a chamber 240. For example, the chamber 240 may have an airtight structure capable of maintaining an atmosphere lower than atmospheric pressure.
Further, the processing device 200 can include a plurality of lift pins and a drive device that moves the plurality of lift pins up and down. When receiving the object W from the transport device or transferring the object W to the transport device, the lift pin is raised by the drive device and protrudes from the first main surface 11a. When placing the object W received from the transport device on the first main surface 11a, the lift pin is lowered by the drive device and is housed inside the ceramic dielectric substrate 11.

Further, the processing device 200 can be provided with various devices depending on the content of the processing. For example, a vacuum pump or the like that evacuates the inside of the chamber 240 can be provided. A plasma generator that generates plasma can be provided inside the chamber 240 . A process gas supply unit may be provided inside the chamber 240 to supply a process gas. A heater may be provided inside the chamber 240 to heat the object W and the process gas. Note that the devices provided in the processing device 200 are not limited to those illustrated. Since known techniques can be applied to the devices provided in the processing device 200, detailed explanation will be omitted.

The embodiments of the present invention have been described above. However, the invention is not limited to these descriptions. For example, although a configuration using Coulomb force is illustrated as the electrostatic chuck 110, a configuration using Johnson-Rahbek force is also applicable. Further, the scope of the present invention includes any design changes made by those skilled in the art in the above-described embodiments as long as they have the characteristics of the present invention. Furthermore, the elements of each of the embodiments described above can be combined to the extent technically possible, and combinations of these are also included within the scope of the present invention as long as they include the features of the present invention.

Reference Signs List 11 ceramic dielectric substrate, 11a first main surface, 11b second main surface, 11c ceramic dielectric substrate, 12 electrode, 14 groove, 14a bottom surface, 15 through hole, 15a hole, 15b hole, 15c hole, 15c1 surface, 15d hole, 16 hole, 16h hole, 16i edge, 16j edge, 50 base plate, 53 gas introduction path, 53b edge, 60 joint, 70 porous portion, 70a porous portion, 71 porous region, 72 dense region , 90 porous part, 90a porous part, 90b porous part, 92a dense part, 92b dense part, 96 pores, 110 electrostatic chuck, 110a electrostatic chuck, 200 processing device, 210 power supply, 230 supply part, W object thing

Claims (16)

a ceramic dielectric substrate having a first main surface on which an object to be attracted is placed, and a second main surface opposite to the first main surface;
a base plate that supports the ceramic dielectric substrate and has a gas introduction path;
a first porous portion provided on the ceramic dielectric substrate and facing the gas introduction path;
Equipped with
When a direction from the base plate toward the ceramic dielectric substrate is a first direction, and a direction substantially orthogonal to the first direction is a second direction,
The first porous portion includes a first porous region and a first dense region denser than the first porous region , the first dense region has a cylindrical shape, and the first porous region has a cylindrical shape. surround the sides,
The first porous region has a plurality of first sparse portions having a plurality of pores, and a density higher than that of the first sparse portions, and a dimension in the second direction is equal to the first sparse portion in the second direction. a first dense portion smaller than the dimension of one dense region;
Each of the plurality of first sparse portions extends in the first direction,
The first dense portion is located between the plurality of first sparse portions,
The first sparse portion has a first wall portion provided between the plurality of holes,
In the second direction, the minimum value of the dimension of the first wall portion is smaller than the minimum value of the dimension of the first dense portion,
An electrostatic chuck characterized in that at least a part of the edge of the opening on the ceramic dielectric substrate side of the gas introduction path is formed in a curved line. a ceramic dielectric substrate having a first main surface on which an object to be attracted is placed, and a second main surface opposite to the first main surface;
a base plate that supports the ceramic dielectric substrate and has a gas introduction path;
a second porous portion provided on the base plate and facing the gas introduction path;
Equipped with
When a direction from the base plate toward the ceramic dielectric substrate is a first direction, and a direction substantially orthogonal to the first direction is a second direction,
The second porous region includes a second porous region and a second dense region denser than the second porous region , the second dense region has a cylindrical shape, and the second porous region has a cylindrical shape. surround the sides,
The second porous region has a plurality of second sparse portions having a plurality of pores and a density higher than the density of the second sparse portions, and the dimension in the second direction is equal to the second sparse portion in the second direction. a second dense portion smaller than the dimension of the second dense region;
Each of the plurality of second sparse portions extends in the first direction,
The second dense portion is located between the plurality of second sparse portions,
The second sparse portion has a second wall portion provided between the plurality of holes,
In the second direction, the minimum dimension of the second wall portion is smaller than the minimum dimension of the second dense portion,
An electrostatic chuck characterized in that at least a part of the edge of the opening on the ceramic dielectric substrate side of the gas introduction path is formed in a curved line. In the second direction, the dimensions of the plurality of holes provided in each of the plurality of first sparse portions are smaller than the dimensions of the first dense portion; The electrostatic chuck according to claim 1 or 2, wherein dimensions of the plurality of holes provided in each of the second sparse portions are smaller than dimensions of the second dense portion. The aspect ratio of the plurality of holes provided in each of the plurality of first sparse portions or the aspect ratio of the plurality of holes provided in each of the plurality of second sparse portions is 30 or more. The electrostatic chuck according to any one of claims 1 to 3, characterized in that: In the second direction, the dimensions of the plurality of holes provided in each of the plurality of first sparse portions or the dimensions of the plurality of holes provided in each of the plurality of second sparse portions are: The electrostatic chuck according to any one of claims 1 to 4, wherein the electrostatic chuck is 1 micrometer or more and 20 micrometers or less. When viewed along the first direction, the plurality of holes provided in the first sparse portion include a first hole located at the center of the first sparse portion,
The number of holes adjacent to and surrounding the first hole among the plurality of holes is six, or when viewed along the first direction, the second hole The plurality of holes provided in the sparse portion include a second hole located at the center of the second sparse portion,
The electrostatic chuck according to claim 1, wherein the number of holes adjacent to and surrounding the second hole among the plurality of holes is six. The ceramic dielectric substrate has a first hole located between the first main surface and the first porous part or the second porous part ,
At least one of the ceramic dielectric substrate and the first porous portion has a second hole located between the first hole and the first porous portion or the second porous portion. have,
In a second direction substantially perpendicular to the first direction, the dimensions of the second hole are smaller than the dimensions of the first porous part or the second porous part , and are smaller than the dimensions of the first hole. The electrostatic chuck according to any one of claims 1 to 6, characterized in that it is large. The first porous region has a first dense portion having a higher density than the first sparse portion, and a dimension in the second direction is larger than a dimension of the first dense portion in the second direction. Furthermore, it has
When projected onto a plane perpendicular to the first direction, the first dense part and the first hole overlap, or
The second porous region has a second dense portion that has a higher density than the second sparse portion and a dimension in the second direction that is larger than a dimension of the second dense portion in the second direction. Furthermore, it has
The electrostatic chuck according to claim 7 , wherein the second dense portion and the first hole overlap when projected onto a plane perpendicular to the first direction . The plurality of first sparse portions are provided around the first dense portion when projected onto a plane perpendicular to the first direction , or
The electrostatic chuck according to claim 8 , wherein the plurality of second sparse portions are provided around the second dense portion when projected onto a plane perpendicular to the first direction . The length of the first dense part along the first direction is smaller than the length of the first porous part along the first direction , or
The electrostatic chuck according to claim 8 or 9 , wherein a length of the second dense portion along the first direction is smaller than a length of the second porous portion along the first direction . In the first direction, the first sparse portion is provided between the first dense portion and the base plate , or
The electrostatic chuck according to claim 8 , wherein the second sparse portion is provided between the second dense portion and the base plate in the first direction . The length of the first dense portion along the first direction is approximately the same as the length of the first porous portion along the first direction , or
The electrostatic capacitor according to claim 8 or 9 , wherein a length of the second dense portion along the first direction is approximately the same as a length of the second porous portion along the first direction. Chuck. The electrostatic chuck according to claim 7 , wherein the first hole extends in a direction inclined at a predetermined angle with respect to the first direction. The plurality of holes provided in each of the plurality of first sparse portions or the plurality of second sparse portions are configured to allow gas introduced from the gas introduction path to flow therethrough. The electrostatic chuck according to any one of Items 1 to 13 . 14. The electrostatic chuck according to claim 13 , wherein an angle between the first direction and the direction in which the first hole extends is greater than or equal to 5 degrees and less than or equal to 30 degrees. The electrostatic chuck according to any one of claims 1 to 15,
a supply unit capable of supplying gas to a gas introduction path provided in the electrostatic chuck;
A processing device characterized by comprising:

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