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JP7101583B2 - Board processing equipment and board processing method - Google Patents

Board processing equipment and board processing method Download PDF

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JP7101583B2
JP7101583B2 JP2018188788A JP2018188788A JP7101583B2 JP 7101583 B2 JP7101583 B2 JP 7101583B2 JP 2018188788 A JP2018188788 A JP 2018188788A JP 2018188788 A JP2018188788 A JP 2018188788A JP 7101583 B2 JP7101583 B2 JP 7101583B2
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substrate
unit
height
coating
holding
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JP2020054973A (en
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賢哉 篠崎
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to CN201910909737.8A priority patent/CN111001539A/en
Priority to KR1020190121566A priority patent/KR20200038862A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
    • B05C9/06—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying two different liquids or other fluent materials, or the same liquid or other fluent material twice, to the same side of the work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B05C11/1002—Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves
    • B05C11/1015—Means for controlling supply, i.e. flow or pressure, of liquid or other fluent material to the applying apparatus, e.g. valves responsive to a conditions of ambient medium or target, e.g. humidity, temperature ; responsive to position or movement of the coating head relative to the target
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C13/00—Means for manipulating or holding work, e.g. for separate articles
    • B05C13/02—Means for manipulating or holding work, e.g. for separate articles for particular articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
    • B05C9/08—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Description

本開示は、基板処理装置および基板処理方法に関する。 The present disclosure relates to a substrate processing apparatus and a substrate processing method.

特許文献１には、気体の圧力で基板を浮かせて搬送しながら、基板に塗布膜を形成することが開示されている。 Patent Document 1 discloses that a coating film is formed on a substrate while the substrate is floated and conveyed by the pressure of a gas.

特許第５５７０４６４号公報Japanese Patent No. 5570464

本開示は、塗布膜を均一に形成する技術を提供する。 The present disclosure provides a technique for uniformly forming a coating film.

本開示の一態様による基板処理装置は、保持部と、搬送部と、調整部と、塗布部と、制御部とを備える。保持部は、基板の下面を吸着する複数の吸着パッドを有し、基板を保持する。搬送部は、保持部を搬送方向に沿って搬送する。調整部は、保持部の傾きを調整する。塗布部は、基板に処理液を塗布する。制御部は、塗布部の直下における保持部の傾きを調整部によって制御する。 The substrate processing apparatus according to one aspect of the present disclosure includes a holding unit, a transport unit, an adjusting unit, a coating unit, and a control unit. The holding portion has a plurality of suction pads that suck the lower surface of the substrate, and holds the substrate. The transport unit transports the holding portion along the transport direction. The adjusting unit adjusts the inclination of the holding unit. The coating unit applies the treatment liquid to the substrate. The control unit controls the inclination of the holding unit directly under the coating unit by the adjusting unit.

本開示によれば、塗布膜を均一に形成することができる。 According to the present disclosure, the coating film can be uniformly formed.

図１は、実施形態に係る基板処理装置の一部を示す概略平面図である。FIG. 1 is a schematic plan view showing a part of the substrate processing apparatus according to the embodiment. 図２は、実施形態に係る基板処理装置の搬送部を示す概略側面図である。FIG. 2 is a schematic side view showing a transport unit of the substrate processing apparatus according to the embodiment. 図３は、図１のIII-III断面における概略図である。FIG. 3 is a schematic view of a cross section of FIG. 1 III-III. 図４は、実施形態に係る制御装置の構成を示すブロック図である。FIG. 4 is a block diagram showing a configuration of a control device according to an embodiment. 図５は、実施形態に係る高さ調整処理を説明するフローチャートである。FIG. 5 is a flowchart illustrating the height adjustment process according to the embodiment. 図６は、実施形態に係る第２塗布部における基板処理を説明するフローチャートである。FIG. 6 is a flowchart illustrating the substrate processing in the second coating portion according to the embodiment. 図７は、実施形態、および比較例に係る第２塗布部の直下における基板の高さの一例を示す図である。FIG. 7 is a diagram showing an example of the height of the substrate immediately below the second coating portion according to the embodiment and the comparative example. 図８は、変形例に係る基板処理装置の一部を示す平面図である。FIG. 8 is a plan view showing a part of the substrate processing apparatus according to the modified example.

以下、添付図面を参照して、本願の開示する基板処理装置および基板処理方法の実施形態を詳細に説明する。なお、以下に示す実施形態により開示される基板処理装置および基板処理方法が限定されるものではない。 Hereinafter, embodiments of the substrate processing apparatus and the substrate processing method disclosed in the present application will be described in detail with reference to the accompanying drawings. The substrate processing apparatus and the substrate processing method disclosed by the following embodiments are not limited.

以下参照する各図面では、説明を分かりやすくするために、互いに直交するＸ軸方向、Ｙ軸方向およびＺ軸方向を規定し、Ｚ軸正方向を鉛直上向き方向とする直交座標系を示す。 In each drawing referred to below, in order to make the explanation easy to understand, an orthogonal coordinate system is shown in which the X-axis direction, the Y-axis direction, and the Z-axis direction that are orthogonal to each other are defined, and the Z-axis positive direction is the vertical upward direction.

また、ここでは、Ｙ軸正方向を前方とし、Ｙ軸負方向を後方とする前後方向を規定し、Ｘ軸負方向を右方とし、Ｘ軸正方向を左方とする左右方向を規定する。また、Ｚ軸正方向を上方とし、Ｚ軸負方向を下方とする上下方向を規定する。基板処理装置は、基板を後方から前方に向けて前後方向に沿って搬送しながら、処理を行う。すなわち、基板処理装置は、後方から前方への方向である搬送方向に沿って基板を搬送しながら、処理を行う。 Further, here, the front-back direction with the Y-axis positive direction as the front and the Y-axis negative direction as the rear is defined, and the left-right direction with the X-axis negative direction as the right and the X-axis positive direction as the left is defined. .. Further, a vertical direction is defined in which the positive direction of the Z axis is upward and the negative direction of the Z axis is downward. The substrate processing apparatus performs processing while transporting the substrate from the rear to the front along the front-rear direction. That is, the substrate processing apparatus performs processing while transporting the substrate along the transport direction, which is the direction from the rear to the front.

＜全体構成＞
実施形態に係る基板処理装置１について図１～図３を参照し説明する。図１は、実施形態に係る基板処理装置１の一部を示す概略平面図である。図２は、実施形態に係る基板処理装置１の搬送部５を示す概略側面図である。図３は、図１のIII-III断面における概略図である。 <Overall configuration>
The substrate processing apparatus 1 according to the embodiment will be described with reference to FIGS. 1 to 3. FIG. 1 is a schematic plan view showing a part of the substrate processing apparatus 1 according to the embodiment. FIG. 2 is a schematic side view showing a transport unit 5 of the substrate processing device 1 according to the embodiment. FIG. 3 is a schematic view of a cross section of FIG. 1 III-III.

基板処理装置１は、複数の塗布部２と、浮上ステージ３と、一対の保持部４と、一対の搬送部５と、一対の調整部６と、複数のパッド高さ調整部７と、一対の検出センサ８と、制御装置９とを備える。基板処理装置１は、例えば、ＬＣＤ（液晶ディスプレイ）用のガラス基板Ｓ（以下、「基板Ｓ」と称する。）に処理液としてレジスト液を塗布する。 The substrate processing device 1 includes a plurality of coating units 2, a levitation stage 3, a pair of holding units 4, a pair of transport units 5, a pair of adjusting units 6, and a plurality of pad height adjusting units 7. The detection sensor 8 and the control device 9 are provided. The substrate processing apparatus 1 applies a resist liquid as a treatment liquid to, for example, a glass substrate S for an LCD (liquid crystal display) (hereinafter, referred to as “substrate S”).

ここでは、複数の塗布部２として、第１塗布部２Ａ、および第２塗布部２Ｂの２つの塗布部２を備える一例について説明するが、塗布部２の数は、これに限られることはなく、３つ以上であってもよい。 Here, an example in which two coating portions 2 of the first coating portion 2A and the second coating portion 2B are provided as the plurality of coating portions 2 will be described, but the number of the coating portions 2 is not limited to this. It may be three or more.

第１塗布部２Ａ、および第２塗布部２Ｂは、基板Ｓの搬送方向に沿って、すなわち、後方から前方に向けて、第１塗布部２Ａ、第２塗布部２Ｂの順に配置される。 The first coating portion 2A and the second coating portion 2B are arranged in the order of the first coating portion 2A and the second coating portion 2B along the transport direction of the substrate S, that is, from the rear to the front.

第１塗布部２Ａは、左右方向に沿って延びる。第１塗布部２Ａは、門型の支持部材１２Ａに取り付けられる。第１塗布部２Ａは、基板Ｓにレジスト液（処理液の一例）を塗布し、基板Ｓに塗布膜であるレジスト膜を形成する。なお、第１塗布部２Ａは、前後方向に沿って移動可能なプライミング部（不図示）によって、第１塗布部２Ａの吐出口におけるレジスト液の付着状態が整えられる。これにより、第１塗布部２Ａは、レジスト液の吐出状態が安定化される。 The first coating portion 2A extends along the left-right direction. The first coating portion 2A is attached to the portal-shaped support member 12A. The first coating portion 2A applies a resist liquid (an example of a treatment liquid) to the substrate S to form a resist film as a coating film on the substrate S. The first coating portion 2A has a priming portion (not shown) that can move along the front-rear direction, so that the adhered state of the resist liquid at the discharge port of the first coating portion 2A is adjusted. As a result, the discharge state of the resist liquid is stabilized in the first coating portion 2A.

第２塗布部２Ｂは、左右方向に沿って延びる。第２塗布部２Ｂは、門型の支持部材１２Ｂに取り付けられる。第２塗布部２Ｂは、基板Ｓにレジスト液（処理液の一例）を塗布し、基板Ｓにレジスト膜を形成する。なお、第２塗布部２Ｂは、第１塗布部２Ａと同様にプライミング部（不図示）によってレジスト液の吐出状態が安定化される。 The second coating portion 2B extends along the left-right direction. The second coating portion 2B is attached to the portal-shaped support member 12B. The second coating portion 2B applies a resist liquid (an example of a treatment liquid) to the substrate S to form a resist film on the substrate S. Similar to the first coating unit 2A, the priming unit (not shown) stabilizes the discharge state of the resist liquid in the second coating unit 2B.

基板処理装置１は、例えば、第１塗布部２Ａ、および第２塗布部２Ｂによって交互に基板Ｓにレジスト液を塗布することができる。これにより、基板処理装置１は、一方の塗布部２に対してプライミング部によってレジスト液の吐出状態を安定化させている間に、他方の塗布部２によって基板Ｓにレジスト液を塗布することができる。 The substrate processing apparatus 1 can alternately apply the resist liquid to the substrate S by, for example, the first coating unit 2A and the second coating unit 2B. As a result, the substrate processing apparatus 1 can apply the resist liquid to the substrate S by the other coating unit 2 while the priming unit stabilizes the discharge state of the resist liquid to one coating unit 2. can.

浮上ステージ３は、第１浮上ステージ３Ａと、第２浮上ステージ３Ｂと、第３浮上ステージ３Ｃと、第４浮上ステージ３Ｄと、第５浮上ステージ３Ｅとを備える。 The levitation stage 3 includes a first levitation stage 3A, a second levitation stage 3B, a third levitation stage 3C, a fourth levitation stage 3D, and a fifth levitation stage 3E.

各浮上ステージ３Ａ～３Ｅは、基板Ｓの搬送方向に沿って、すなわち、後方から前方に向けて、第１浮上ステージ３Ａ、第２浮上ステージ３Ｂ、第３浮上ステージ３Ｃ、第４浮上ステージ３Ｄ、第５浮上ステージ３Ｅの順に配置される。各浮上ステージ３Ａ～３Ｅは、架台１３上に配置される。 Each levitation stage 3A to 3E has a first levitation stage 3A, a second levitation stage 3B, a third levitation stage 3C, a fourth levitation stage 3D, along the transport direction of the substrate S, that is, from the rear to the front. The fifth levitation stage 3E is arranged in this order. Each levitation stage 3A to 3E is arranged on the gantry 13.

第１浮上ステージ３Ａは、多数の噴出口（不図示）を有する。第１浮上ステージ３Ａは、圧縮された空気を噴出口から基板Ｓの下面に向けて吹き付け、基板Ｓに対して上方へ作用する力（以下、浮上力と称する。）を与える。第１浮上ステージ３Ａは、浮上力を与えることで、保持部４に保持された基板Ｓの浮上高を調整する。具体的には、第１浮上ステージ３Ａは、基板Ｓの浮上高を２００～２０００μｍの範囲内で安定するよう調整する。 The first levitation stage 3A has a large number of spouts (not shown). The first levitation stage 3A blows compressed air from the ejection port toward the lower surface of the substrate S, and applies a force acting upward on the substrate S (hereinafter, referred to as levitation force). The first levitation stage 3A adjusts the levitation height of the substrate S held by the holding portion 4 by applying a levitation force. Specifically, the first levitation stage 3A adjusts the levitation height of the substrate S so as to be stable within the range of 200 to 2000 μm.

第２浮上ステージ３Ｂは、第１塗布部２Ａの下方に配置される。第２浮上ステージ３Ｂは、多数の噴出口（不図示）、および多数の吸引口（不図示）を有する。第２浮上ステージ３Ｂは、圧縮された空気を噴出口から基板Ｓの下面に向けて吹き付け、基板Ｓに浮上力を与える。また、第２浮上ステージ３Ｂは、吸引口から、基板Ｓとの間に存在する空気を吸引する。これにより、第２浮上ステージ３Ｂは、基板Ｓの浮上高を高精度に調整することができる。具体的には、第２浮上ステージ３Ｂは、基板Ｓの浮上高を３０～６０μｍの範囲内で安定するよう高精度に調整する。 The second levitation stage 3B is arranged below the first coating portion 2A. The second levitation stage 3B has a large number of spouts (not shown) and a large number of suction ports (not shown). The second levitation stage 3B blows compressed air from the ejection port toward the lower surface of the substrate S to apply a levitation force to the substrate S. Further, the second levitation stage 3B sucks the air existing between the suction port and the substrate S from the suction port. As a result, the second levitation stage 3B can adjust the levitation height of the substrate S with high accuracy. Specifically, the second levitation stage 3B adjusts the levitation height of the substrate S with high accuracy so as to be stable within the range of 30 to 60 μm.

第３浮上ステージ３Ｃ、および第５浮上ステージ３Ｅの構成は、第１浮上ステージ３Ａと同じであり、詳しい説明は省略する。また、第４浮上ステージ３Ｄは、第２塗布部２Ｂの下方に配置される。第４浮上ステージ３Ｄの構成は、第２浮上ステージ３Ｂと同じであり、詳しい説明は省略する。 The configurations of the third levitation stage 3C and the fifth levitation stage 3E are the same as those of the first levitation stage 3A, and detailed description thereof will be omitted. Further, the fourth levitation stage 3D is arranged below the second coating portion 2B. The configuration of the fourth levitation stage 3D is the same as that of the second levitation stage 3B, and detailed description thereof will be omitted.

保持部４は、左右方向に並んで一対設けられる。保持部４は、左右方向において、浮上ステージ３を挟むように設けられる。保持部４は、パッド支持部材４０と、複数の吸着パッド４１と、複数のダミーパッド４２とを備える。 A pair of holding portions 4 are provided side by side in the left-right direction. The holding portion 4 is provided so as to sandwich the levitation stage 3 in the left-right direction. The holding portion 4 includes a pad support member 40, a plurality of suction pads 41, and a plurality of dummy pads 42.

パッド支持部材４０は、前後方向に沿って延びる板状、または棒状の部材であり、上下方向に変形可能に形成される。パッド支持部材４０には、浮上ステージ３側の側面に吸着パッド４１が取り付けられる。また、パッド支持部材４０には、浮上ステージ３側とは反対側の側面にダミーパッド４２が取り付けられる。 The pad support member 40 is a plate-shaped or rod-shaped member extending along the front-rear direction, and is formed so as to be deformable in the vertical direction. A suction pad 41 is attached to the pad support member 40 on the side surface on the levitation stage 3 side. Further, a dummy pad 42 is attached to the pad support member 40 on the side surface opposite to the levitation stage 3 side.

パッド支持部材４０は、略Ｌ字状のジョイント部材１４、パッド高さ調整部７、および調整部６の昇降支持部材６０を介して搬送部５のガイド部材５１に接続される。パッド支持部材４０の下端には、前後方向に沿って複数のジョイント部材１４が並んで接続される。 The pad support member 40 is connected to the guide member 51 of the transport portion 5 via a substantially L-shaped joint member 14, a pad height adjusting portion 7, and an elevating support member 60 of the adjusting portion 6. A plurality of joint members 14 are connected side by side to the lower end of the pad support member 40 along the front-rear direction.

パッド支持部材４０は、調整部６によって上下方向の高さを変更可能である。また、パッド支持部材４０は、調整部６によって前後方向の傾きを変更可能である。さらに、パッド支持部材４０は、各パッド高さ調整部７によって各パッド高さ調整部７付近の高さを変更可能である。 The height of the pad support member 40 can be changed in the vertical direction by the adjusting portion 6. Further, the pad support member 40 can change its inclination in the front-rear direction by the adjusting portion 6. Further, the pad support member 40 can change the height in the vicinity of each pad height adjusting portion 7 by each pad height adjusting portion 7.

吸着パッド４１は、前後方向に並んで配置される。ここでは、６つの吸着パッド４１が前後方向に並んで配置される一例を示すが、吸着パッド４１の数はこれに限られることはない。各吸着パッド４１は、同一の高さとなるように、パッド支持部材４０に取り付けられる。吸着パッド４１には、上面側に複数の吸着口が形成される。吸着パッド４１は、吸着口によって基板Ｓの下面を吸着する。 The suction pads 41 are arranged side by side in the front-rear direction. Here, an example is shown in which six suction pads 41 are arranged side by side in the front-rear direction, but the number of suction pads 41 is not limited to this. Each suction pad 41 is attached to the pad support member 40 so as to have the same height. The suction pad 41 is formed with a plurality of suction ports on the upper surface side. The suction pad 41 sucks the lower surface of the substrate S by the suction port.

ダミーパッド４２は、前後方向に並んで配置される。ここでは、６つのダミーパッド４２が前後方向に並んで配置される一例を示すが、ダミーパッド４２の数はこれに限られることはない。例えば、ダミーパッド４２は、前後方向における位置、および高さが吸着パッド４１と同じになるようにパッド支持部材４０に取り付けられる。 The dummy pads 42 are arranged side by side in the front-rear direction. Here, an example is shown in which six dummy pads 42 are arranged side by side in the front-rear direction, but the number of dummy pads 42 is not limited to this. For example, the dummy pad 42 is attached to the pad support member 40 so that the position and height in the front-rear direction are the same as those of the suction pad 41.

このように、保持部４は、基板Ｓの下面を吸着する複数の吸着パッド４１を有し、基板Ｓを保持する。保持部４は、調整部６によって上下方向に沿って移動し、高さを変更可能である。また、保持部４は、調整部６によって前後方向に対し傾動可能であり、基板Ｓの傾きを変更することで、基板Ｓの高さを変更可能である。さらに、保持部４は、各パッド高さ調整部７によって、各ジョイント部材１４付近の高さを個別に調整可能である。 As described above, the holding portion 4 has a plurality of suction pads 41 that suck the lower surface of the substrate S, and holds the substrate S. The height of the holding portion 4 can be changed by moving along the vertical direction by the adjusting portion 6. Further, the holding portion 4 can be tilted in the front-rear direction by the adjusting portion 6, and the height of the substrate S can be changed by changing the tilt of the substrate S. Further, the holding portion 4 can individually adjust the height in the vicinity of each joint member 14 by each pad height adjusting portion 7.

搬送部５は、左右方向に並んで一対設けられる。搬送部５は、左右方向において、浮上ステージ３を挟むように設けられる。搬送部５は、前後方向に沿って設けられたレール１５上を移動し、保持部４を搬送方向に沿って搬送する。レール１５は、架台１３上に設けられる。搬送部５は、例えば、モータなどの駆動機構（不図示）によってレール１５に沿って前後方向に移動する。 A pair of transport units 5 are provided side by side in the left-right direction. The transport unit 5 is provided so as to sandwich the levitation stage 3 in the left-right direction. The transport unit 5 moves on a rail 15 provided along the front-rear direction, and transports the holding unit 4 along the transport direction. The rail 15 is provided on the gantry 13. The transport unit 5 moves in the front-rear direction along the rail 15 by, for example, a drive mechanism (not shown) such as a motor.

搬送部５は、スライダ５０と、複数のガイド部材５１とを備える。スライダ５０は、例えば、門型に形成され、レール１５に対し摺動する。 The transport unit 5 includes a slider 50 and a plurality of guide members 51. The slider 50 is formed in a gate shape, for example, and slides with respect to the rail 15.

ガイド部材５１は、スライダ５０の上端に取り付けられ、上下方向に沿って延びる。ガイド部材５１は、例えば、前後方向に２つ設けられる。なお、ガイド部材５１は、前後方向に延びる１つの板状部材であってもよく、３つ以上設けられてもよい。ガイド部材５１は、調整部６の昇降支持部材６０を上下方向に移動可能に支持する。また、ガイド部材５１は、昇降支持部材６０を傾動可能に支持する。 The guide member 51 is attached to the upper end of the slider 50 and extends in the vertical direction. For example, two guide members 51 are provided in the front-rear direction. The guide member 51 may be one plate-shaped member extending in the front-rear direction, or may be provided with three or more guide members 51. The guide member 51 supports the elevating support member 60 of the adjusting portion 6 so as to be movable in the vertical direction. Further, the guide member 51 supports the elevating support member 60 so as to be tiltable.

調整部６は、左右方向に並んで一対設けられる。調整部６は、左右方向において、浮上ステージ３を挟むように設けられる。調整部６は、上下方向における保持部４の高さを調整する。調整部６は、搬送装置（不図示）との間で基板Ｓの受け渡しを行う場合に、保持部４を上昇させる。また、調整部６は、前後方向に対する保持部４の傾きを調整する。調整部６は、保持部４の傾きを調整することで、例えば、第２塗布部２Ｂの直下における基板Ｓの高さを調整することができる。 A pair of adjusting portions 6 are provided side by side in the left-right direction. The adjusting portion 6 is provided so as to sandwich the levitation stage 3 in the left-right direction. The adjusting unit 6 adjusts the height of the holding unit 4 in the vertical direction. The adjusting unit 6 raises the holding unit 4 when the substrate S is delivered to and from the transport device (not shown). Further, the adjusting unit 6 adjusts the inclination of the holding unit 4 with respect to the front-rear direction. The adjusting unit 6 can adjust the height of the substrate S directly under the second coating unit 2B, for example, by adjusting the inclination of the holding unit 4.

調整部６は、昇降支持部材６０と、２つの昇降アクチュエータ６１とを備える。昇降支持部材６０は、前後方向に沿って延びる板状の部材である。昇降支持部材６０は、搬送部５のガイド部材５１に昇降可能、および傾動可能に支持される。 The adjusting unit 6 includes an elevating support member 60 and two elevating actuators 61. The elevating support member 60 is a plate-shaped member extending in the front-rear direction. The elevating support member 60 is supported by the guide member 51 of the transport unit 5 so as to be able to elevate and tilt.

昇降アクチュエータ６１は、前後方向に並んで２つ設けられる。昇降アクチュエータ６１は、例えば、ボールネジ機構やモータなどによって構成される。昇降アクチュエータ６１は、搬送部５のガイド部材５１に対する昇降支持部材６０の高さを調整する。 Two elevating actuators 61 are provided side by side in the front-rear direction. The elevating actuator 61 is composed of, for example, a ball screw mechanism, a motor, or the like. The elevating actuator 61 adjusts the height of the elevating support member 60 with respect to the guide member 51 of the transport portion 5.

各昇降アクチュエータ６１は、ガイド部材５１に対する昇降支持部材６０の高さをそれぞれ調整することができる。そのため、調整部６は、前後方向に対する保持部４の傾きを調整することができる。なお、昇降アクチュエータ６１は、後述するパッド高さ調整部７よりも低い精度、例えば、数ｍ程度の精度で変更可能であってもよい。 Each elevating actuator 61 can adjust the height of the elevating support member 60 with respect to the guide member 51. Therefore, the adjusting unit 6 can adjust the inclination of the holding unit 4 with respect to the front-rear direction. The elevating actuator 61 may be changeable with a lower accuracy than the pad height adjusting unit 7, which will be described later, for example, with an accuracy of about several meters.

パッド高さ調整部７は、前後方向に並んで配置される。図１および図２では４つのパッド高さ調整部７が前後方向に並んで配置される一例を示すが、パッド高さ調整部７の数はこれに限られることはない。 The pad height adjusting portions 7 are arranged side by side in the front-rear direction. 1 and 2 show an example in which four pad height adjusting portions 7 are arranged side by side in the front-rear direction, but the number of pad height adjusting portions 7 is not limited to this.

パッド高さ調整部７は、例えば、垂直精密ステージによって構成される。パッド高さ調整部７は、回転式の手動つまみを工具などによって回転させることで、昇降支持部材６０に対するジョイント部材１４の高さを変更する。 The pad height adjusting unit 7 is composed of, for example, a vertical precision stage. The pad height adjusting unit 7 changes the height of the joint member 14 with respect to the elevating support member 60 by rotating the rotary manual knob with a tool or the like.

各パッド高さ調整部７は、ジョイント部材１４を介して、各パッド高さ調整部７付近のパッド支持部材４０、すなわち、吸着パッド４１、ダミーパッド４２、および基板Ｓの高さをそれぞれ調整可能である。パッド高さ調整部７は、吸着パッド４１などの高さを数μｍ以下の精度で変更可能である。 Each pad height adjusting portion 7 can adjust the heights of the pad supporting members 40 near each pad height adjusting portion 7, that is, the suction pad 41, the dummy pad 42, and the substrate S, respectively, via the joint member 14. Is. The pad height adjusting unit 7 can change the height of the suction pad 41 or the like with an accuracy of several μm or less.

検出センサ８は、左右方向に並んで一対設けられる。検出センサ８は、左右方向において、第２塗布部２Ｂを挟むように設けられる。検出センサ８は、第２塗布部２Ｂが取り付けられた支持部材１２Ｂに取り付けられる。 A pair of detection sensors 8 are provided side by side in the left-right direction. The detection sensor 8 is provided so as to sandwich the second coating portion 2B in the left-right direction. The detection sensor 8 is attached to the support member 12B to which the second coating portion 2B is attached.

検出センサ８は、例えば、光学式距離センサであり、検出センサ８は、バッド支持部材に取り付けられたダミーパッド４２の高さを検出する。検出センサ８によってダミーパッド４２の高さを検出することで、左右方向においてダミーパッド４２に対応する吸着パッド４１の高さ、すなわち基板Ｓの高さを検出することができる。すなわち、検出センサ８は、第２塗布部２Ｂ（塗布部の一例）の直下における基板Ｓの高さを検出する。 The detection sensor 8 is, for example, an optical distance sensor, and the detection sensor 8 detects the height of the dummy pad 42 attached to the bad support member. By detecting the height of the dummy pad 42 by the detection sensor 8, the height of the suction pad 41 corresponding to the dummy pad 42, that is, the height of the substrate S can be detected in the left-right direction. That is, the detection sensor 8 detects the height of the substrate S directly under the second coating portion 2B (an example of the coating portion).

実施形態に係る基板処理装置１では、複数のパッド高さ調整部７によって、第１塗布部２Ａ（所定塗布部の一例）の直下における基板Ｓの高さが所定範囲内となるように複数の吸着パッド４１の高さをそれぞれ調整される。所定範囲は、予め設定された下限高さ以上、かつ上限高さ以下となる範囲である。 In the substrate processing apparatus 1 according to the embodiment, a plurality of pad height adjusting portions 7 are used so that the height of the substrate S directly under the first coating portion 2A (an example of a predetermined coating portion) is within a predetermined range. The height of the suction pad 41 is adjusted respectively. The predetermined range is a range in which the height is equal to or higher than the preset lower limit height and is equal to or lower than the upper limit height.

基板処理装置１は、吸着パッド４１の高さが調整された保持部４によって保持された基板Ｓの高さが、第２塗布部２Ｂの直下においても所定範囲内となるように、制御装置９によって昇降アクチュエータ６１を制御する。具体的には、基板処理装置１は、第２塗布部２Ｂの直下における保持部４の傾きを制御する。 The substrate processing device 1 controls the control device 9 so that the height of the substrate S held by the holding portion 4 whose height of the suction pad 41 is adjusted is within a predetermined range even immediately under the second coating portion 2B. Controls the elevating actuator 61. Specifically, the substrate processing apparatus 1 controls the inclination of the holding portion 4 directly under the second coating portion 2B.

制御装置９は、基板処理装置１における各機能を発揮させるために、搬送部５や、第１塗布部２Ａなどを制御する。 The control device 9 controls the transport unit 5, the first coating unit 2A, and the like in order to exert each function in the substrate processing device 1.

なお、ここでは、第２塗布部２Ｂの直下において基板Ｓの高さを調整するための処理を行う制御装置９の機能について説明し、他の処理を行う機能についての説明は省略する。 Here, the function of the control device 9 that performs a process for adjusting the height of the substrate S directly under the second coating portion 2B will be described, and the description of the function of performing other processes will be omitted.

実施形態に係る制御装置９について図４を参照し説明する。図４は、実施形態に係る制御装置９の構成を示すブロック図である。 The control device 9 according to the embodiment will be described with reference to FIG. FIG. 4 is a block diagram showing the configuration of the control device 9 according to the embodiment.

制御装置９は、入力部９０と、出力部９１と、制御部９２と、記憶部９３とを備える。入力部９０は、検出センサ８からダミーパッド４２の高さに関する信号が入力される。出力部９１は、各昇降アクチュエータ６１を制御するための信号を出力する。 The control device 9 includes an input unit 90, an output unit 91, a control unit 92, and a storage unit 93. The input unit 90 receives a signal regarding the height of the dummy pad 42 from the detection sensor 8. The output unit 91 outputs a signal for controlling each elevating actuator 61.

制御部９２は、例えば、ＣＰＵ（Central Processing Unit）、ＲＯＭ（Read Only Memory）、ＲＡＭ（Random Access Memory）、入出力ポートなどを有するマイクロコンピュータや各種の回路を含む。 The control unit 92 includes, for example, a microcomputer having a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), an input / output port, and various circuits.

制御部９２は、ＣＰＵがＲＯＭに記憶されたプログラムを、ＲＡＭを作業領域として使用して実行することにより機能する複数の処理部を備える。具体的には、制御部９２は、調整量算出部９５と、制御信号生成部９６とを備える。 The control unit 92 includes a plurality of processing units that function by the CPU executing the program stored in the ROM by using the RAM as a work area. Specifically, the control unit 92 includes an adjustment amount calculation unit 95 and a control signal generation unit 96.

なお、上記プログラムは、コンピュータによって読み取り可能な記録媒体に記録されていたものであって、記録媒体から制御装置９の記憶部９３にインストールされたものであってもよい。コンピュータによって読み取り可能な記録媒体としては、例えばハードディスク（ＨＤ）、フレキシブルディスク（ＦＤ）、コンパクトディスク（ＣＤ）、マグネットオプティカルディスク（ＭＯ）、メモリカードなどがある。また、制御部９２が備える各処理部は、それぞれ一部または全部がＡＳＩＣ（Application Specific Integrated Circuit）やＦＰＧＡ（Field Programmable Gate Array）等のハードウェアで構成されてもよい。 The above program may be recorded on a recording medium readable by a computer, and may be installed from the recording medium in the storage unit 93 of the control device 9. Recording media that can be read by a computer include, for example, a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), a memory card, and the like. Further, each processing unit included in the control unit 92 may be partially or wholly composed of hardware such as an ASIC (Application Specific Integrated Circuit) or an FPGA (Field Programmable Gate Array).

調整量算出部９５は、第２塗布部２Ｂの直下において、基板Ｓの高さを所定範囲内とするための昇降アクチュエータ６１の調整量を算出する。 The adjustment amount calculation unit 95 calculates the adjustment amount of the elevating actuator 61 for keeping the height of the substrate S within a predetermined range directly under the second coating unit 2B.

具体的には、調整量算出部９５は、第２塗布部２Ｂの直下に基板Ｓが到達すると、基板Ｓの位置と、第２塗布部２Ｂの直下における基板Ｓの高さとを紐付けたデータを生成する。なお、基板Ｓの高さは、検出センサ８によって検出されたダミーパッド４２の高さに基づいて算出される。 Specifically, when the substrate S reaches directly under the second coating portion 2B, the adjustment amount calculation unit 95 links the position of the substrate S with the height of the substrate S directly under the second coating portion 2B. To generate. The height of the substrate S is calculated based on the height of the dummy pad 42 detected by the detection sensor 8.

調整量算出部９５は、生成したデータに対して、第２塗布部２Ｂの直下で基板Ｓの高さが所定範囲内となる保持部４の傾き、すなわち傾動角を算出し、傾動角を実現する各昇降アクチュエータ６１の調整量を算出する。調整量算出部９５は、基板Ｓの位置に対し、各昇降アクチュエータ６１の調整量を算出する。 The adjustment amount calculation unit 95 calculates the tilt of the holding unit 4, that is, the tilt angle, in which the height of the substrate S is within a predetermined range directly under the second coating unit 2B with respect to the generated data, and realizes the tilt angle. The adjustment amount of each elevating actuator 61 is calculated. The adjustment amount calculation unit 95 calculates the adjustment amount of each elevating actuator 61 with respect to the position of the substrate S.

なお、基板処理装置１では、保持部４を傾動させて、第２塗布部２Ｂの直下における基板Ｓの高さを調整している。これは、昇降アクチュエータ６１の調整量、すなわち昇降アクチュエータ６１による保持部４の上下方向の変化量に対する基板Ｓの高さの変化量を小さくし、基板Ｓの高さを精度良く調整するためである。基板処理装置１は、パッド高さ調整部７よりも精度が低い昇降アクチュエータ６１を用いて、パッド高さ調整部７と同様に高い精度で基板Ｓの高さを調整することができる。 In the substrate processing apparatus 1, the holding portion 4 is tilted to adjust the height of the substrate S directly under the second coating portion 2B. This is to reduce the adjustment amount of the elevating actuator 61, that is, the amount of change in the height of the substrate S with respect to the amount of change in the vertical direction of the holding portion 4 by the elevating actuator 61, and to adjust the height of the substrate S with high accuracy. .. The substrate processing device 1 can adjust the height of the substrate S with high accuracy as in the pad height adjusting unit 7 by using the elevating actuator 61 having a lower accuracy than the pad height adjusting unit 7.

調整量算出部９５は、算出した各昇降アクチュエータ６１の調整量を記憶部９３に記憶させる。なお、各昇降アクチュエータ６１の調整量は、パッド高さ調整部７によって第１塗布部２Ａの直下における基板Ｓの高さが調整された所定のタイミングで算出され、記憶部９３に記憶される。所定のタイミングは、例えば、基板処理装置１において、基板Ｓにレジスト膜の塗布を開始する場合や、メンテナンスが行われた場合である。 The adjustment amount calculation unit 95 stores the calculated adjustment amount of each elevating actuator 61 in the storage unit 93. The adjustment amount of each elevating actuator 61 is calculated at a predetermined timing when the height of the substrate S directly under the first coating unit 2A is adjusted by the pad height adjusting unit 7, and is stored in the storage unit 93. The predetermined timing is, for example, when the substrate processing apparatus 1 starts coating the resist film on the substrate S or when maintenance is performed.

制御信号生成部９６は、第２塗布部２Ｂによって基板Ｓにレジスト膜を塗布する場合に、基板Ｓの位置に対する各昇降アクチュエータ６１の調整量を記憶部９３から読み出し、各昇降アクチュエータ６１を制御する信号を生成する。生成された信号は、出力部９１から調整部６の各昇降アクチュエータ６１に送信され、各昇降アクチュエータ６１により保持部４の傾きが調整される。 When the resist film is applied to the substrate S by the second coating unit 2B, the control signal generation unit 96 reads the adjustment amount of each elevating actuator 61 with respect to the position of the substrate S from the storage unit 93 and controls each elevating actuator 61. Generate a signal. The generated signal is transmitted from the output unit 91 to each elevating actuator 61 of the adjusting unit 6, and the inclination of the holding unit 4 is adjusted by each elevating actuator 61.

このように、制御部９２は、第２塗布部２Ｂ（塗布部の一例）の直下における保持部４の傾きを調整部６によって制御する。具体的には、制御部９２は、複数のパッド高さ調整部７によって複数の吸着パッド４１の高さが調整された状態で、第２塗布部２Ｂ（所定塗布部とは異なる塗布部の一例）の直下における保持部４の傾きを調整部６によって制御する。また、制御部９２は、検出センサ８によって検出され、記憶部９３に記憶された基板Ｓの高さに基づいて、保持部４の傾きを調整部６によって制御する。 In this way, the control unit 92 controls the inclination of the holding unit 4 directly under the second coating unit 2B (an example of the coating unit) by the adjusting unit 6. Specifically, the control unit 92 is an example of the second coating unit 2B (an example of a coating unit different from the predetermined coating unit) in a state where the heights of the plurality of suction pads 41 are adjusted by the plurality of pad height adjusting units 7. ) Is controlled by the adjusting unit 6 at an inclination of the holding unit 4. Further, the control unit 92 controls the inclination of the holding unit 4 by the adjusting unit 6 based on the height of the substrate S detected by the detection sensor 8 and stored in the storage unit 93.

記憶部９３は、例えば、ＲＡＭ、フラッシュメモリ（Flash Memory）等の半導体メモリ素子、またはハードディスク、光ディスク等の記憶装置によって実現される。 The storage unit 93 is realized by, for example, a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk.

＜高さ調整処理＞
次に、基板処理装置１における高さ調整処理について図５を参照し説明する。図５は、実施形態に係る高さ調整処理を説明するフローチャートである。 <Height adjustment process>
Next, the height adjustment process in the substrate processing apparatus 1 will be described with reference to FIG. FIG. 5 is a flowchart illustrating the height adjustment process according to the embodiment.

基板処理装置１では、第１塗布部２Ａの直下で基板Ｓの高さが所定範囲内となるように各パッド高さ調整部７が調整される（Ｓ１０）。 In the substrate processing apparatus 1, each pad height adjusting portion 7 is adjusted so that the height of the substrate S is within a predetermined range directly under the first coating portion 2A (S10).

基板処理装置１は、各パッド高さ調整部７による調整が行われた状態で基板Ｓを第２塗布部２Ｂの直下に搬送し、第２塗布部２Ｂの直下における基板Ｓの高さを検出する（Ｓ１１）。 The substrate processing device 1 conveys the substrate S directly under the second coating portion 2B in a state where the adjustment by each pad height adjusting portion 7 is performed, and detects the height of the substrate S directly under the second coating portion 2B. (S11).

基板処理装置１は、基板Ｓの位置と、第２塗布部２Ｂの直下における基板Ｓの高さとを紐付けたデータを生成する（Ｓ１２）。 The substrate processing apparatus 1 generates data in which the position of the substrate S is associated with the height of the substrate S directly under the second coating portion 2B (S12).

基板処理装置１は、第２塗布部２Ｂの直下で基板Ｓの高さが所定範囲内となる保持部４の傾動角を算出し（Ｓ１３）、傾動角を実現する各昇降アクチュエータ６１の調整量を算出する（Ｓ１４）。 The substrate processing device 1 calculates the tilt angle of the holding portion 4 whose height of the substrate S is within a predetermined range directly under the second coating portion 2B (S13), and adjusts the amount of each elevating actuator 61 that realizes the tilt angle. Is calculated (S14).

基板処理装置１は、基板Ｓの位置に対する各昇降アクチュエータ６１の調整量を記憶する（Ｓ１５）。 The board processing device 1 stores the adjustment amount of each elevating actuator 61 with respect to the position of the board S (S15).

＜基板処理＞
次に、基板処理装置１の第２塗布部２Ｂにおいて基板Ｓにレジスト液を塗布する基板処理について図６を参照し説明する。図６は、実施形態に係る第２塗布部２Ｂにおける基板処理を説明するフローチャートである。 <Board processing>
Next, the substrate processing for applying the resist liquid to the substrate S in the second coating portion 2B of the substrate processing apparatus 1 will be described with reference to FIG. FIG. 6 is a flowchart illustrating the substrate processing in the second coating unit 2B according to the embodiment.

基板処理装置１は、第２塗布部２Ｂによって基板Ｓにレジスト液を塗布する場合には、各昇降アクチュエータ６１の調整量を記憶部９３から読み出す（Ｓ２０）。 When the substrate processing apparatus 1 applies the resist liquid to the substrate S by the second coating unit 2B, the substrate processing device 1 reads out the adjustment amount of each elevating actuator 61 from the storage unit 93 (S20).

基板処理装置１は、読み出した各昇降アクチュエータ６１の調整量に基づいて昇降アクチュエータ６１の高さをそれぞれ調整し、保持部４の傾きを調整する（Ｓ２１）。具体的には、基板処理装置１は、基板Ｓの位置に応じて、基板Ｓの高さが所定範囲内となるように、昇降アクチュエータ６１の高さを調整し、保持部４の傾きを調整する。 The substrate processing device 1 adjusts the height of the elevating actuator 61 based on the read-out adjustment amount of each elevating actuator 61, and adjusts the inclination of the holding portion 4 (S21). Specifically, the substrate processing device 1 adjusts the height of the elevating actuator 61 so that the height of the substrate S is within a predetermined range according to the position of the substrate S, and adjusts the inclination of the holding portion 4. do.

このように、基板処理装置１は、第２塗布部２Ｂによって基板Ｓにレジスト液を塗布する場合に、記憶した各昇降アクチュエータ６１の調整量に基づいて、第２塗布部２Ｂの直下での保持部４の傾きを調整する。 As described above, when the substrate processing apparatus 1 applies the resist liquid to the substrate S by the second coating unit 2B, the substrate processing device 1 holds the resist liquid directly under the second coating unit 2B based on the stored adjustment amount of each elevating actuator 61. Adjust the inclination of the part 4.

第１塗布部２Ａの直下において、基板Ｓの高さが所定範囲内となるようにパッド高さ調整部７によって基板Ｓの高さを調整した場合であっても、第２塗布部２Ｂの直下においては、基板Ｓの高さが所定範囲内とはならないことがある。 Directly below the first coating portion 2A, even when the height of the substrate S is adjusted by the pad height adjusting portion 7 so that the height of the substrate S is within a predetermined range, directly below the second coating portion 2B. In, the height of the substrate S may not be within the predetermined range.

本実施形態を適用しない比較例における第２塗布部２Ｂの直下での基板Ｓの高さの一例を図７において破線で示す。これに対し、本実施形態に係る基板処理装置１は、昇降アクチュエータ６１によって保持部４を傾かせることで、図７において実線で示すように基板Ｓの高さを所定範囲内とすることができる。図７は、実施形態、および比較例に係る第２塗布部２Ｂの直下における基板Ｓの高さの一例を示す図である。 An example of the height of the substrate S directly under the second coating portion 2B in the comparative example to which the present embodiment is not applied is shown by a broken line in FIG. On the other hand, in the substrate processing apparatus 1 according to the present embodiment, the height of the substrate S can be within a predetermined range as shown by the solid line in FIG. 7 by tilting the holding portion 4 by the elevating actuator 61. .. FIG. 7 is a diagram showing an example of the height of the substrate S directly under the second coating portion 2B according to the embodiment and the comparative example.

＜効果＞
基板処理装置１は、基板Ｓの下面を吸着する複数の吸着パッド４１を有し、基板Ｓを保持する保持部４と、保持部４を搬送方向に沿って搬送する搬送部５と、保持部４の傾きを調整する調整部６と、基板Ｓにレジスト液（処理液の一例）を塗布する第２塗布部２Ｂ（塗布部の一例）と、第２塗布部２Ｂの直下における保持部４の傾きを調整部６によって制御する制御部９２とを備える。 <Effect>
The substrate processing device 1 has a plurality of suction pads 41 for sucking the lower surface of the substrate S, a holding portion 4 for holding the substrate S, a transport portion 5 for transporting the holding portion 4 along the transport direction, and a holding portion. The adjusting unit 6 for adjusting the inclination of 4, the second coating unit 2B (an example of the coating unit) for applying the resist liquid (an example of the treatment liquid) to the substrate S, and the holding unit 4 directly under the second coating unit 2B. A control unit 92 for controlling the inclination by the adjustment unit 6 is provided.

換言すると、基板処理装置１は、基板処理方法として、基板Ｓの下面に吸着する複数の吸着パッド４１を有する保持部４によって基板Ｓを保持する工程と、保持部４を搬送方向に沿って搬送する工程と、第２塗布部２Ｂ（塗布部の一例）によって基板Ｓにレジスト液（処理液の一例）を塗布する工程と、第２塗布部２Ｂの直下における保持部４の傾きを調整する工程とを有する。 In other words, the substrate processing apparatus 1 has, as a substrate processing method, a step of holding the substrate S by a holding portion 4 having a plurality of suction pads 41 adsorbed on the lower surface of the substrate S, and transporting the holding portion 4 along the transport direction. A step of applying a resist liquid (an example of a treatment liquid) to the substrate S by a second coating portion 2B (an example of a coating portion), and a step of adjusting the inclination of the holding portion 4 directly under the second coating portion 2B. And have.

これにより、基板処理装置１は、第２塗布部２Ｂの直下における保持部４の傾き、すなわち基板Ｓの傾きを調整し、例えば、基板Ｓの高さを所定範囲内とすることができる。そのため、基板処理装置１は、塗布膜であるレジスト膜を均一に形成することができる。 As a result, the substrate processing apparatus 1 can adjust the inclination of the holding portion 4 directly under the second coating portion 2B, that is, the inclination of the substrate S, and for example, the height of the substrate S can be set within a predetermined range. Therefore, the substrate processing apparatus 1 can uniformly form the resist film which is the coating film.

また、基板処理装置１は、保持部４の傾きを調整することで、昇降アクチュエータ６１の調整量に対し、基板Ｓの高さの変化量を小さくすることができる。そのため、基板処理装置１は、昇降アクチュエータ６１を用いて基板Ｓの高さを精度良く調整することができる。すなわち、基板処理装置１は、搬送装置（不図示）との間で、基板Ｓの受け渡しを行う場合に基板Ｓを昇降させる昇降アクチュエータ６１を用いて基板Ｓの高さを精度良く調整することができる。 Further, the substrate processing device 1 can adjust the inclination of the holding portion 4 so that the amount of change in the height of the substrate S is smaller than the adjustment amount of the elevating actuator 61. Therefore, the substrate processing device 1 can accurately adjust the height of the substrate S by using the elevating actuator 61. That is, the substrate processing device 1 can accurately adjust the height of the substrate S by using the elevating actuator 61 that raises and lowers the substrate S when the substrate S is transferred to and from the transport device (not shown). can.

また、基板処理装置１は、第１塗布部２Ａ（所定塗布部の一例）の直下における基板Ｓの高さが所定範囲内となるように複数の吸着パッド４１の高さをそれぞれ調整可能な複数のパッド高さ調整部７を備える。制御部９２は、複数のパッド高さ調整部７によって複数の吸着パッド４１の高さが調整された状態で、第２塗布部２Ｂ（所定塗布部とは異なる他の塗布部）の直下における保持部４の傾きを調整部６によって制御する。 Further, the substrate processing device 1 has a plurality of heights of the plurality of suction pads 41 that can be adjusted so that the height of the substrate S directly under the first coating portion 2A (an example of a predetermined coating portion) is within a predetermined range. The pad height adjusting unit 7 is provided. The control unit 92 holds the second coating unit 2B (another coating unit different from the predetermined coating unit) directly under the state where the heights of the plurality of suction pads 41 are adjusted by the plurality of pad height adjustment units 7. The inclination of the unit 4 is controlled by the adjusting unit 6.

これにより、基板処理装置１は、複数の塗布部２として、第１塗布部２Ａ、および第２塗布部２Ｂを有する場合に、各塗布部２Ａ、２Ｂの直下において基板Ｓの高さを、所定範囲内とすることができる。そのため、基板処理装置１は、第１塗布部２Ａ、または第２塗布部２Ｂによって基板Ｓにレジスト液を塗布する場合に、レジスト膜を均一に形成することができる。 As a result, when the substrate processing apparatus 1 has the first coating portion 2A and the second coating portion 2B as the plurality of coating portions 2, the height of the substrate S is set directly under each of the coating portions 2A and 2B. It can be within the range. Therefore, the substrate processing apparatus 1 can uniformly form the resist film when the resist liquid is applied to the substrate S by the first coating unit 2A or the second coating unit 2B.

また、基板処理装置１は、第２塗布部２Ｂ（塗布部の一例）の直下における基板Ｓの高さを検出する検出センサ８を備える。制御部９２は、検出センサ８によって検出され、記憶部９３に記憶された基板Ｓの高さに基づいて、保持部４の傾きを調整部６によって制御する。 Further, the substrate processing apparatus 1 includes a detection sensor 8 that detects the height of the substrate S directly under the second coating portion 2B (an example of the coating portion). The control unit 92 controls the inclination of the holding unit 4 by the adjusting unit 6 based on the height of the substrate S detected by the detection sensor 8 and stored in the storage unit 93.

これにより、基板処理装置１は、予め記憶された基板Ｓの高さに基づいて保持部４の傾きを調整することで、第２塗布部２Ｂの直下において基板Ｓの高さを素早く調整することができる。また、基板処理装置１は、第２塗布部２Ｂの直下において基板Ｓの高さを精度良く調整することができる。 As a result, the substrate processing apparatus 1 quickly adjusts the height of the substrate S directly under the second coating portion 2B by adjusting the inclination of the holding portion 4 based on the height of the substrate S stored in advance. Can be done. Further, the substrate processing apparatus 1 can accurately adjust the height of the substrate S directly under the second coating portion 2B.

＜変形例＞
次に、本実施形態の変形例について説明する。 <Modification example>
Next, a modification of the present embodiment will be described.

変形例に係る基板処理装置１は、第２塗布部２Ｂの直下における基板Ｓの高さを第２塗布部２Ｂによってレジスト液を基板Ｓに塗布する度に検出し、検出した基板Ｓの高さに基づいて昇降アクチュエータ６１を制御し、保持部４の傾きを調整する。変形例に係る基板処理装置１は、検出した基板Ｓの高さに基づいて、基板Ｓの高さが所定範囲内となるように、昇降アクチュエータ６１に対し、例えば、フィードバック制御を行う。すなわち、変形例に係る基板処理装置１は、検出センサ８によって基板Ｓの高さを検出しつつ、検出された基板Ｓの高さに基づいて、保持部４の傾きを調整部６によって制御する。 The substrate processing apparatus 1 according to the modified example detects the height of the substrate S directly under the second coating portion 2B each time the resist liquid is applied to the substrate S by the second coating portion 2B, and detects the height of the substrate S. The elevating actuator 61 is controlled based on the above, and the inclination of the holding portion 4 is adjusted. The substrate processing apparatus 1 according to the modification performs, for example, feedback control to the elevating actuator 61 so that the height of the substrate S is within a predetermined range based on the detected height of the substrate S. That is, the substrate processing device 1 according to the modified example detects the height of the substrate S by the detection sensor 8 and controls the inclination of the holding unit 4 by the adjusting unit 6 based on the detected height of the substrate S. ..

これにより、変形例に係る基板処理装置１は、例えば、経年劣化により、第２塗布部２Ｂの直下における基板Ｓの高さが変わった場合でも、第２塗布部２Ｂの直下における基板Ｓの高さを所定範囲内とすることができる。そのため、変形例に係る基板処理装置１は、レジスト膜を均一に形成することができる。 As a result, in the substrate processing apparatus 1 according to the modified example, even if the height of the substrate S directly under the second coating portion 2B changes due to deterioration over time, for example, the height of the substrate S directly under the second coating portion 2B Can be within a predetermined range. Therefore, the substrate processing apparatus 1 according to the modified example can uniformly form the resist film.

また、変形例に係る基板処理装置１は、図８に示すように第１塗布部２Ａの直下において基板Ｓの高さを検出する検出センサ８０を備える。図８は、変形例に係る基板処理装置１の一部を示す平面図である。 Further, as shown in FIG. 8, the substrate processing apparatus 1 according to the modified example includes a detection sensor 80 that detects the height of the substrate S directly under the first coating portion 2A. FIG. 8 is a plan view showing a part of the substrate processing apparatus 1 according to the modified example.

変形例に係る基板処理装置１は、第１塗布部２Ａの直下における基板Ｓの高さを検出する。そして、変形例に係る基板処理装置１は、第１塗布部２Ａの直下における基板Ｓの高さが所定範囲内となるように、昇降アクチュエータ６１に対し、例えば、フィードバック制御を行い、保持部４の傾きを調整する。すなわち、変形例に係る基板処理装置１は、第１塗布部２Ａ（所定塗布部）の直下における保持部４の傾きを調整部６によって制御する。 The substrate processing apparatus 1 according to the modified example detects the height of the substrate S directly under the first coating portion 2A. Then, the substrate processing device 1 according to the modified example performs feedback control, for example, on the elevating actuator 61 so that the height of the substrate S directly under the first coating portion 2A is within a predetermined range, and the holding portion 4 Adjust the tilt of. That is, the substrate processing device 1 according to the modified example controls the inclination of the holding portion 4 directly under the first coating portion 2A (predetermined coating portion) by the adjusting unit 6.

これにより、変形例に係る基板処理装置１は、例えば、経年劣化により、第１塗布部２Ａの直下における基板Ｓの高さが変わった場合でも、第１塗布部２Ａの直下における基板Ｓの高さを所定範囲内とすることができる。そのため、変形例に係る基板処理装置１は、レジスト膜を均一にすることができる。 As a result, in the substrate processing apparatus 1 according to the modified example, even if the height of the substrate S directly under the first coating portion 2A changes due to deterioration over time, for example, the height of the substrate S directly under the first coating portion 2A The height can be within a predetermined range. Therefore, the substrate processing apparatus 1 according to the modified example can make the resist film uniform.

変形例に係る基板処理装置１は、第１塗布部２Ａ、および第２塗布部２Ｂにおいて異なる処理液を塗布してもよい。 The substrate processing apparatus 1 according to the modified example may apply different treatment liquids in the first coating unit 2A and the second coating unit 2B.

また、変形例に係る基板処理装置１は、第２塗布部２Ｂの直下において基板Ｓの高さが所定範囲内となるようにパッド高さ調整部７によって高さを調整してもよい。この場合、変形例に係る基盤処理装置は、第１塗布部２Ａの直下において、上記実施形態と同様に各昇降アクチュエータ６１の高さを調整し、保持部４の傾きを調整する。 Further, the substrate processing apparatus 1 according to the modified example may be adjusted in height by the pad height adjusting portion 7 so that the height of the substrate S is within a predetermined range directly under the second coating portion 2B. In this case, the substrate processing apparatus according to the modified example adjusts the height of each elevating actuator 61 directly under the first coating portion 2A and adjusts the inclination of the holding portion 4.

なお、今回開示された実施形態は全ての点で例示であって制限的なものではないと考えられるべきである。実に、上記した実施形態は多様な形態で具現され得る。また、上記の実施形態は、添付の請求の範囲及びその趣旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。 It should be noted that the embodiments disclosed this time are exemplary in all respects and are not restrictive. Indeed, the above embodiments can be embodied in a variety of forms. Further, the above-described embodiment may be omitted, replaced or changed in various forms without departing from the scope of the attached claims and the purpose thereof.

１ 基板処理装置
２ 塗布部
２Ａ 第１塗布部（所定塗布部）
２Ｂ 第２塗布部（他の塗布部）
４ 保持部
５ 搬送部
６ 調整部
７ パッド高さ調整部
８ 検出センサ
９ 制御装置
４１ 吸着パッド
６１ 昇降アクチュエータ
９２ 制御部
９３ 記憶部 1 Substrate processing device 2 Coating part 2A First coating part (predetermined coating part)
2B 2nd coating part (other coating part)
4 Holding unit 5 Transport unit 6 Adjusting unit 7 Pad height adjusting unit 8 Detection sensor 9 Control device 41 Suction pad 61 Elevating actuator 92 Control unit 93 Storage unit

Claims (6)

基板の下面を吸着する複数の吸着パッドを有し、前記基板を保持する保持部と、
前記保持部を搬送方向に沿って搬送する搬送部と、
前記保持部の傾きを調整する調整部と、
前記基板に処理液を塗布する塗布部と、
前記塗布部の直下における前記保持部の傾きを前記調整部によって制御する制御部と
を備える基板処理装置。 A holding portion having a plurality of suction pads for sucking the lower surface of the substrate and holding the substrate,
A transport unit that transports the holding unit along the transport direction, and a transport unit that transports the holding unit.
An adjustment unit that adjusts the inclination of the holding unit,
A coating part for applying the treatment liquid to the substrate, and
A substrate processing device including a control unit that controls the inclination of the holding unit directly under the coating unit by the adjusting unit. 所定塗布部の直下における前記基板の高さが所定範囲内となるように前記複数の吸着パッドの高さをそれぞれ調整可能な複数のパッド高さ調整部
を備え、
前記制御部は、
前記複数のパッド高さ調整部によって前記複数の吸着パッドの高さが調整された状態で、前記所定塗布部とは異なる他の塗布部の直下における前記保持部の傾きを前記調整部によって制御する
請求項１に記載の基板処理装置。 A plurality of pad height adjusting portions capable of adjusting the heights of the plurality of suction pads so that the height of the substrate directly under the predetermined coating portion is within a predetermined range are provided.
The control unit
With the heights of the plurality of suction pads adjusted by the plurality of pad height adjusting portions, the adjusting portion controls the inclination of the holding portion directly under the other coating portion different from the predetermined coating portion. The substrate processing apparatus according to claim 1. 前記制御部は、
前記所定塗布部の直下における前記保持部の傾きを前記調整部によって制御する
請求項２に記載の基板処理装置。 The control unit
The substrate processing apparatus according to claim 2, wherein the tilt of the holding portion immediately below the predetermined coating portion is controlled by the adjusting portion. 前記塗布部の直下における前記基板の高さを検出する検出センサ
を備え、
前記制御部は、
前記検出センサによって検出され、記憶部に記憶された前記基板の高さに基づいて、前記保持部の傾きを前記調整部によって制御する
請求項１～３のいずれか一つに記載の基板処理装置。 A detection sensor for detecting the height of the substrate directly under the coating portion is provided.
The control unit
The substrate processing apparatus according to any one of claims 1 to 3, wherein the tilt of the holding portion is controlled by the adjusting unit based on the height of the substrate detected by the detection sensor and stored in the storage unit. .. 前記塗布部の直下における前記基板の高さを検出する検出センサ
を備え、
前記制御部は、
前記検出センサによって前記基板の高さを検出しつつ、検出された前記基板の高さに基づいて、前記保持部の傾きを前記調整部によって制御する
請求項１～３のいずれか一つに記載の基板処理装置。 A detection sensor for detecting the height of the substrate directly under the coating portion is provided.
The control unit
The invention according to any one of claims 1 to 3, wherein the height of the substrate is detected by the detection sensor, and the inclination of the holding portion is controlled by the adjusting portion based on the detected height of the substrate. Board processing equipment. 基板の下面を吸着する複数の吸着パッドを有する保持部によって前記基板を保持する工程と、
前記保持部を搬送方向に沿って搬送する工程と、
塗布部によって前記基板に処理液を塗布する工程と、
前記塗布部の直下における前記保持部の傾きを調整する工程と
を有する基板処理方法。 A step of holding the substrate by a holding portion having a plurality of suction pads for sucking the lower surface of the substrate, and a step of holding the substrate.
The process of transporting the holding portion along the transport direction and
The process of applying the treatment liquid to the substrate by the coating unit, and
A substrate processing method comprising a step of adjusting the inclination of the holding portion directly under the coating portion.
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