JP6994241B2

JP6994241B2 - Plasma CVD equipment, plasma CVD method and manufacturing method of fine particles or electronic components

Info

Publication number: JP6994241B2
Application number: JP2018002033A
Authority: JP
Inventors: 正史田中; 茂実中川; 光夫橘
Original assignee: YOU PATENTER CO,. LTD.
Current assignee: YOU PATENTER CO,. LTD.
Priority date: 2018-01-10
Filing date: 2018-01-10
Publication date: 2022-01-14
Anticipated expiration: 2038-01-10
Also published as: JP2019119919A

Description

本発明は、プラズマＣＶＤ(Chemical Vapor Deposition)装置、プラズマＣＶＤ方法及び微粒子又は電子部品の製造方法に関する。 The present invention relates to a plasma CVD (Chemical Vapor Deposition) apparatus, a plasma CVD method, and a method for manufacturing fine particles or electronic components.

従来のプラズマＣＶＤ装置はチャンバーを有し、このチャンバー内には内部形状が円形である容器が配置されている。この容器は微粒子を収容するものである。容器の外側にはアース遮蔽部材が配置されており、このアース遮蔽部材は、前記容器において微粒子を収容する収容面以外の表面を遮蔽する部材である。また、プラズマＣＶＤ装置は前記容器を回転させる回転機構を有し、前記容器内には対向電極が配置されている。容器にはプラズマ電源が電気的に接続されている。また、プラズマＣＶＤ装置は、前記容器内に原料ガスを導入するガス導入機構と、前記チャンバー内を真空排気する排気機構を有している。 The conventional plasma CVD apparatus has a chamber, and a container having a circular internal shape is arranged in the chamber. This container contains fine particles. An earth shielding member is arranged on the outside of the container, and this earth shielding member is a member that shields a surface other than the accommodating surface for accommodating fine particles in the container. Further, the plasma CVD apparatus has a rotation mechanism for rotating the container, and a counter electrode is arranged in the container. A plasma power supply is electrically connected to the container. Further, the plasma CVD apparatus has a gas introduction mechanism for introducing a raw material gas into the container and an exhaust mechanism for evacuating the inside of the chamber.

上記プラズマＣＶＤ装置では、前記回転機構を用いて前記容器を回転させることにより容器内の微粒子又は電子部品を攪拌あるいは回転させながらプラズマＣＶＤ法を用いることで、微粒子の表面に薄膜を被覆することができる。 In the plasma CVD apparatus, the surface of the fine film can be coated with a thin film by using the plasma CVD method while stirring or rotating the fine particles or electronic components in the container by rotating the container using the rotation mechanism. can.

また、上記プラズマＣＶＤ装置は、容器内に収容された微粒子（粉体）に振動を加えるための打ち付け部材としてのアース棒を有している。つまり、アース棒は、その先端をアース遮蔽部材に打ち付けることができるようになっている。アース遮蔽部材と容器とは絶縁部材によって繋げられており、アース棒によってアース遮蔽部材を振動させ、その振動が前記絶縁部材を通して容器に伝えられるようになっている。このため、容器とともに回転しているアース遮蔽部材にアース棒を連続的に打ち付けることにより、アース遮蔽部材の振動を容器内に収容された粉体に加えることが可能となる。これにより、粉体が凝集するのを防ぎ、粉体の攪拌及び混合を促進することができる（例えば特許文献１参照）。 Further, the plasma CVD apparatus has an earth rod as a striking member for applying vibration to the fine particles (powder) contained in the container. That is, the tip of the ground rod can be struck against the ground shielding member. The ground shielding member and the container are connected by an insulating member, and the ground shielding member is vibrated by the ground rod, and the vibration is transmitted to the container through the insulating member. Therefore, by continuously striking the ground rod against the ground shielding member rotating together with the container, it is possible to apply the vibration of the ground shielding member to the powder contained in the container. This can prevent the powder from aggregating and promote stirring and mixing of the powder (see, for example, Patent Document 1).

上述したように従来のプラズマＣＶＤ装置では、アース遮蔽部材にアース棒を打ち付けてアース遮蔽部材を振動させ、その振動が容器に伝えられることで、容器内に収容された微粒子を振動させることができる。一方、微粒子の処理効率を上げるために多量の微粒子を一度に処理できるように、容器の大きさを大きくすると、容器の外側のアース遮蔽部材も大きくなる。そのため、その大きなアース遮蔽部材を振動させるにはアース棒で打ち付ける力も大きくする必要がある。しかし、その打ち付ける力を大きくするにも限度があるため、容器の大きさを大きくするとアース遮蔽部材の振動が小さくなり、微粒子の振動も小さくなる。その結果、粉体（微粒子）の攪拌及び混合を十分に促進することができなくなる。 As described above, in the conventional plasma CVD device, a ground rod is struck against the ground shielding member to vibrate the ground shielding member, and the vibration is transmitted to the container to vibrate the fine particles contained in the container. .. On the other hand, if the size of the container is increased so that a large amount of fine particles can be processed at one time in order to improve the processing efficiency of the fine particles, the ground shielding member on the outside of the container also becomes large. Therefore, in order to vibrate the large ground shielding member, it is necessary to increase the force of striking with the ground rod. However, since there is a limit to increasing the striking force, if the size of the container is increased, the vibration of the ground shielding member becomes smaller, and the vibration of the fine particles also becomes smaller. As a result, the stirring and mixing of the powder (fine particles) cannot be sufficiently promoted.

ＷＯ２００９／０９８７８４号公報WO2009 / 098784

本発明の一態様は、微粒子の攪拌及び混合を促進できるプラズマＣＶＤ装置、プラズマＣＶＤ方法、又は微粒子又は電子部品の製造方法を提供することを課題とする。 An object of the present invention is to provide a plasma CVD apparatus, a plasma CVD method, or a method for manufacturing fine particles or electronic components capable of promoting stirring and mixing of fine particles.

以下に、本発明の種々の態様について説明する。
［１］チャンバーと、
前記チャンバー内に配置され、微粒子又は電子部品を収容する容器であって内部の断面形状が多角形又は円形である容器と、
前記容器の外面に形成され、第１の打刻用部材を収容する第１の収容部と、
前記容器を回転又は振り子動作させる回転機構と、
前記容器内に配置され、前記容器の内面に対向するように配置された対向電極と、
前記容器に電気的に接続されたプラズマ電源と、
前記容器内に原料ガスを導入するガス導入機構と、
前記チャンバー内を真空排気する排気機構と、
を具備し、
前記回転機構を用いて前記容器を回転又は振り子動作させることにより、前記第１の収容部内を前記第１の打刻用部材が移動して前記容器に衝突することで、前記容器に振動を与え、且つ前記容器内の微粒子又は電子部品を攪拌あるいは回転させながらプラズマＣＶＤ法を用いることで、前記微粒子又は前記電子部品の表面に前記微粒子又は前記電子部品より径の小さい超微粒子又は薄膜を被覆することを特徴とするプラズマＣＶＤ装置。 Hereinafter, various aspects of the present invention will be described.
[1] Chamber and
A container arranged in the chamber and containing fine particles or electronic parts and having a polygonal or circular cross-sectional shape inside.
A first accommodating portion formed on the outer surface of the container and accommodating the first engraving member, and a first accommodating portion.
A rotation mechanism that rotates or pendulums the container,
A counter electrode arranged in the container and facing the inner surface of the container, and a counter electrode.
With a plasma power supply electrically connected to the container,
A gas introduction mechanism that introduces raw material gas into the container,
An exhaust mechanism that evacuates the inside of the chamber and
Equipped with
By rotating or pendulum the container using the rotation mechanism, the first stamping member moves in the first accommodating portion and collides with the container, thereby giving vibration to the container. In addition, by using the plasma CVD method while stirring or rotating the fine particles or electronic parts in the container, the surface of the fine particles or electronic parts is coated with ultrafine particles or thin films having a diameter smaller than that of the fine particles or electronic parts. A plasma CVD apparatus characterized in that.

［２］チャンバーと、
前記チャンバー内に配置され、微粒子又は電子部品を収容する容器であって内部の断面形状が多角形である容器と、
前記容器を回転又は振り子動作させる回転機構と、
前記容器内に配置され、前記容器の内面に対向するように配置された対向電極と、
前記容器に電気的に接続されたプラズマ電源と、
前記容器内に原料ガスを導入するガス導入機構と、
前記チャンバー内を真空排気する排気機構と、
を具備し、
前記容器は、前記多角形の第１の辺の長さが前記容器の一方側から他方側にいくにつれて短くなっており、且つ前記多角形の前記第１の辺と隣接する第２の辺の長さが前記容器の一方側から他方側にいくにつれて長くなっており、
前記回転機構を用いて前記容器を回転又は振り子動作させることにより、前記容器内の微粒子又は電子部品を攪拌あるいは回転させながらプラズマＣＶＤ法を用いることで、前記微粒子又は前記電子部品の表面に前記微粒子又は前記電子部品より径の小さい超微粒子又は薄膜を被覆することを特徴とするプラズマＣＶＤ装置。 [2] Chamber and
A container arranged in the chamber and containing fine particles or electronic parts and having a polygonal cross-sectional shape inside.
A rotation mechanism that rotates or pendulums the container,
A counter electrode arranged in the container and facing the inner surface of the container, and a counter electrode.
With a plasma power supply electrically connected to the container,
A gas introduction mechanism that introduces raw material gas into the container,
An exhaust mechanism that evacuates the inside of the chamber and
Equipped with
In the container, the length of the first side of the polygon becomes shorter from one side to the other side of the container, and the length of the second side adjacent to the first side of the polygon becomes shorter. The length increases from one side of the container to the other side.
By rotating or pendulum the container using the rotation mechanism and using the plasma CVD method while stirring or rotating the fine particles or electronic parts in the container, the fine particles or the electronic parts are on the surface of the fine particles or the electronic parts. Alternatively, a plasma CVD apparatus characterized by coating ultrafine particles or a thin film having a diameter smaller than that of the electronic component.

［３］上記［２］において、
前記容器の外面に形成され、第１の打刻用部材を収容する第１の収容部を有し、
前記回転機構を用いて前記容器を回転又は振り子動作させることにより、前記第１の収容部内を前記第１の打刻用部材が移動して前記容器に衝突することで、前記容器に振動を与えることを特徴とするプラズマＣＶＤ装置。 [3] In the above [2],
It has a first accommodating portion formed on the outer surface of the container and accommodating a first engraving member.
By rotating or penduluming the container using the rotation mechanism, the first stamping member moves in the first accommodating portion and collides with the container, thereby giving vibration to the container. A plasma CVD apparatus characterized in that.

［４］上記［１］乃至［３］のいずれか一項において、
前記容器の外面に形成され、第２の打刻用部材を収容する第２の収容部と、
前記容器の外面に形成され、第３の打刻用部材を収容する第３の収容部と、
を有し、
前記回転機構を用いて前記容器を回転又は振り子動作させることにより、前記第２の収容部内を前記第２の打刻用部材が移動して前記容器に衝突し、且つ前記第３の収容部内を前記第３の打刻用部材が移動して前記容器に衝突することで、前記容器に振動を与えることを特徴とするプラズマＣＶＤ装置。 [4] In any one of the above [1] to [3],
A second accommodating portion formed on the outer surface of the container and accommodating the second engraving member,
A third accommodating portion formed on the outer surface of the container and accommodating a third engraving member, and a third accommodating portion.
Have,
By rotating or penduluming the container using the rotation mechanism, the second stamping member moves in the second accommodating portion, collides with the container, and moves inside the third accommodating portion. A plasma CVD apparatus characterized in that the third stamping member moves and collides with the container to give vibration to the container.

［５］上記［１］乃至［３］のいずれか一項において、
前記容器の外面に形成され、前記第１の収容部の隣に位置し、且つ前記容器の断面の垂直方向に位置する、第２の打刻用部材を収容する第２の収容部を有し、
前記回転機構を用いて前記容器を回転又は振り子動作させることにより、前記第２の収容部内を前記第２の打刻用部材が移動して前記容器に衝突することで、前記容器に振動を与えることを特徴とするプラズマＣＶＤ装置。 [5] In any one of the above [1] to [3],
It has a second accommodating portion formed on the outer surface of the container, located next to the first accommodating portion, and located in the vertical direction of the cross section of the container, for accommodating the second engraving member. ,
By rotating or penduluming the container using the rotation mechanism, the second stamping member moves in the second accommodating portion and collides with the container, thereby giving vibration to the container. A plasma CVD apparatus characterized in that.

［６］上記［１］乃至［５］のいずれか一項において、
前記対向電極の上面及び側面を覆い、且つ断面形状が曲面を有するアース遮蔽部材と、
前記アース遮蔽部材に振動を加える振動機構と、
を有することを特徴とするプラズマＣＶＤ装置。 [6] In any one of the above [1] to [5],
An earth shielding member that covers the upper surface and the side surface of the counter electrode and has a curved cross-sectional shape.
A vibration mechanism that applies vibration to the ground shielding member,
A plasma CVD apparatus characterized by having.

［７］上記［１］乃至［６］のいずれか一項において、
前記第１の打刻用部材は、断面形状が多角形の棒形状を有し、且つ前記容器の断面の垂直方向に前記棒形状の長手方向が位置するように前記第１の収容部に収容されていることを特徴とするプラズマＣＶＤ装置。 [7] In any one of the above [1] to [6],
The first stamping member is housed in the first accommodating portion so that the cross-sectional shape has a polygonal rod shape and the longitudinal direction of the rod shape is located in the vertical direction of the cross section of the container. A plasma CVD apparatus characterized by being

［８］上記［１］乃至［７］のいずれか一項において、
前記第１の打刻用部材の表面は、その内部とは異なる材質の膜で被覆されていることを特徴とするプラズマＣＶＤ装置。 [8] In any one of the above [1] to [7],
A plasma CVD apparatus characterized in that the surface of the first stamping member is covered with a film made of a material different from the inside thereof.

［９］上記［１］乃至［８］のいずれか一項において、
前記容器の外側に配置された磁石を有し、前記磁石は前記容器の内部にプラズマを集める機能を有することを特徴とするプラズマＣＶＤ装置。 [9] In any one of the above [1] to [8],
A plasma CVD apparatus having a magnet arranged on the outside of the container, wherein the magnet has a function of collecting plasma inside the container.

［１０］上記［９］において、
前記磁石は前記チャンバー内に配置されていることを特徴とするプラズマＣＶＤ装置 [10] In the above [9],
A plasma CVD apparatus characterized in that the magnet is arranged in the chamber.

［１１］上記［１］乃至［１０］のいずれか一項において、
前記容器の一方側を塞ぐ部材と、
前記容器の他方側に配置され、前記容器の内部に発生するプラズマを閉じ込める機能を有する蓋部と、
を有し、
前記蓋部を、前記容器の断面の垂直方向で且つ前記容器から離れる方向に移動させる移動機構を有することを特徴とするプラズマＣＶＤ装置。 [11] In any one of the above [1] to [10],
A member that closes one side of the container and
A lid located on the other side of the container and having a function of confining plasma generated inside the container.
Have,
A plasma CVD apparatus comprising a moving mechanism for moving the lid portion in a direction perpendicular to the cross section of the container and in a direction away from the container.

［１２］チャンバー内に、内部の断面形状が多角形又は円形である容器を配置し、
前記容器内に微粒子又は電子部品を収容し、
前記容器の内面に対向させた対向電極を前記容器内に配置し、
前記チャンバー内を真空排気し、
前記容器を回転又は振り子動作させ、
前記容器内に原料ガスを導入し、
前記容器にプラズマパワーを供給し、
前記容器を回転又は振り子動作させることにより、前記容器の外面に形成された第１の収容部内を第１の打刻用部材が移動して前記容器に衝突することで、前記容器に振動を与え、且つ前記容器内の前記微粒子又は前記電子部品を攪拌あるいは回転させながらプラズマＣＶＤ法により、前記微粒子又は前記電子部品の表面に前記微粒子又は前記電子部品より径の小さい超微粒子又は薄膜を被覆することを特徴とするプラズマＣＶＤ方法。 [12] A container having a polygonal or circular cross-sectional shape is placed in the chamber.
Fine particles or electronic parts are housed in the container.
A counter electrode facing the inner surface of the container is arranged in the container.
Vacuum exhaust the inside of the chamber
Rotate or pendulum the container to
Introduce the raw material gas into the container and
Plasma power is supplied to the container,
By rotating or pendulum the container, the first stamping member moves in the first accommodating portion formed on the outer surface of the container and collides with the container, thereby giving vibration to the container. In addition, the surface of the fine particles or the electronic parts is coated with ultrafine particles or a thin film having a diameter smaller than that of the fine particles or the electronic parts by a plasma CVD method while stirring or rotating the fine particles or the electronic parts in the container. A plasma CVD method characterized by.

［１３］チャンバー内に、内部の断面形状が多角形である容器を配置し、
前記容器内に微粒子又は電子部品を収容し、
前記容器の内面に対向させた対向電極を前記容器内に配置し、
前記チャンバー内を真空排気し、
前記容器を回転又は振り子動作させ、
前記容器内に原料ガスを導入し、
前記容器にプラズマパワーを供給し、
前記容器を回転又は振り子動作させることにより、前記容器内の前記微粒子又は前記電子部品を攪拌あるいは回転させながらプラズマＣＶＤ法により、前記微粒子又は前記電子部品の表面に前記微粒子又は前記電子部品より径の小さい超微粒子又は薄膜を被覆し、
前記容器は、前記多角形の第１の辺の長さが前記容器の一方側から他方側にいくにつれて短くなっており、且つ前記多角形の前記第１の辺と隣接する第２の辺の長さが前記容器の一方側から他方側にいくにつれて長くなっていることを特徴とするプラズマＣＶＤ方法。 [13] A container having a polygonal cross-sectional shape is placed in the chamber.
Fine particles or electronic parts are housed in the container.
A counter electrode facing the inner surface of the container is arranged in the container.
Vacuum exhaust the inside of the chamber
Rotate or pendulum the container to
Introduce the raw material gas into the container and
Plasma power is supplied to the container,
By rotating or pendulum the container, the fine particles or the electronic component in the container are stirred or rotated by the plasma CVD method, and the surface of the fine particles or the electronic component has a diameter larger than that of the fine particles or the electronic component. Covering small ultrafine particles or thin films,
In the container, the length of the first side of the polygon becomes shorter from one side to the other side of the container, and the length of the second side adjacent to the first side of the polygon becomes shorter. A plasma CVD method characterized in that the length increases from one side of the container to the other side.

［１４］上記［１３］において、
前記容器を回転又は振り子動作させる際、前記容器の外面に形成された第１の収容部内を第１の打刻用部材が移動して前記容器に衝突することで、前記容器に振動を与えることを特徴とするプラズマＣＶＤ方法。 [14] In the above [13],
When the container is rotated or pendulum-operated, the first stamping member moves in the first accommodating portion formed on the outer surface of the container and collides with the container to give vibration to the container. A plasma CVD method characterized by.

［１５］上記［１２］乃至［１４］のいずれか一項において、
前記超微粒子又は薄膜は絶縁物であり、
前記微粒子又は前記電子部品の表面に前記微粒子又は前記電子部品より径の小さい超微粒子又は薄膜を被覆する工程（ａ）の後に、前記微粒子又は前記電子部品を前記容器から取り出し、前記容器の表面に付着した絶縁物の膜を除去する工程（ｂ）を含み、
前記工程（ｂ）は、
前記容器を回転又は振り子動作させ、
前記容器内にクリーニングガスを導入し、
前記容器にプラズマパワーを供給し、
前記容器を回転又は振り子動作させることにより、前記容器の表面に付着した絶縁物の膜をプラズマクリーニングする工程であることを特徴とするプラズマＣＶＤ方法。 [15] In any one of the above [12] to [14],
The ultrafine particles or thin films are insulators and are
After the step (a) of coating the surface of the fine particles or the electronic component with ultrafine particles or a thin film having a diameter smaller than that of the fine particles or the electronic component, the fine particles or the electronic component are taken out from the container and placed on the surface of the container. Including the step (b) of removing the film of the adhered insulating material, the step (b) is included.
The step (b) is
Rotate or pendulum the container to
Cleaning gas is introduced into the container, and
Plasma power is supplied to the container,
A plasma CVD method comprising a step of plasma cleaning a film of an insulator adhering to the surface of the container by rotating or operating the container.

［１６］プラズマＣＶＤ装置を用いて微粒子又は電子部品を製造する方法において、
前記プラズマＣＶＤ装置は、
チャンバーと、
前記チャンバー内に配置され、微粒子又は電子部品を収容する容器であって内部の断面形状が多角形又は円形である容器と、
前記容器の外面に形成され、第１の打刻用部材を収容する第１の収容部と、
前記容器を回転又は振り子動作させる回転機構と、
前記容器内に配置され、前記容器の内面に対向するように配置された対向電極と、
前記容器に電気的に接続されたプラズマ電源と、
前記容器内に原料ガスを導入するガス導入機構と、
前記チャンバー内を真空排気する排気機構と、
を具備し、
前記回転機構を用いて前記容器を回転又は振り子動作させることにより、前記第１の収容部内を前記第１の打刻用部材が移動して前記容器に衝突することで、前記容器に振動を与え、且つ前記容器内の微粒子又は電子部品を攪拌あるいは回転させながらプラズマＣＶＤ法を用いることで、前記微粒子又は前記電子部品の表面に前記微粒子又は前記電子部品より径の小さい超微粒子又は薄膜を被覆することを特徴とする微粒子又は電子部品の製造方法。 [16] In a method of manufacturing fine particles or electronic components using a plasma CVD apparatus.
The plasma CVD apparatus is
With the chamber
A container arranged in the chamber and containing fine particles or electronic parts and having a polygonal or circular cross-sectional shape inside.
A first accommodating portion formed on the outer surface of the container and accommodating the first engraving member, and a first accommodating portion.
A rotation mechanism that rotates or pendulums the container,
A counter electrode arranged in the container and facing the inner surface of the container, and a counter electrode.
With a plasma power supply electrically connected to the container,
A gas introduction mechanism that introduces raw material gas into the container,
An exhaust mechanism that evacuates the inside of the chamber and
Equipped with
By rotating or pendulum-moving the container using the rotation mechanism, the first stamping member moves in the first accommodating portion and collides with the container, thereby giving vibration to the container. In addition, by using the plasma CVD method while stirring or rotating the fine particles or electronic components in the container, the surface of the fine particles or electronic components is coated with ultrafine particles or thin films having a diameter smaller than that of the fine particles or electronic components. A method for manufacturing fine particles or electronic components.

［１７］プラズマＣＶＤ装置を用いて微粒子又は電子部品を製造する方法において、
前記プラズマＣＶＤ装置は、
チャンバーと、
前記チャンバー内に配置され、微粒子又は電子部品を収容する容器であって内部の断面形状が多角形である容器と、
前記容器を回転又は振り子動作させる回転機構と、
前記容器内に配置され、前記容器の内面に対向するように配置された対向電極と、
前記容器に電気的に接続されたプラズマ電源と、
前記容器内に原料ガスを導入するガス導入機構と、
前記チャンバー内を真空排気する排気機構と、
を具備し、
前記容器は、前記多角形の第１の辺の長さが前記容器の一方側から他方側にいくにつれて短くなっており、且つ前記多角形の前記第１の辺と隣接する第２の辺の長さが前記容器の一方側から他方側にいくにつれて長くなっており、
前記回転機構を用いて前記容器を回転又は振り子動作させることにより、前記容器内の微粒子又は電子部品を攪拌あるいは回転させながらプラズマＣＶＤ法を用いることで、前記微粒子又は前記電子部品の表面に前記微粒子又は前記電子部品より径の小さい超微粒子又は薄膜を被覆することを特徴とする微粒子又は電子部品の製造方法。 [17] In a method of manufacturing fine particles or electronic components using a plasma CVD apparatus.
The plasma CVD apparatus is
With the chamber
A container arranged in the chamber and containing fine particles or electronic parts and having a polygonal cross-sectional shape inside.
A rotation mechanism that rotates or pendulums the container,
A counter electrode arranged in the container and facing the inner surface of the container, and a counter electrode.
With a plasma power supply electrically connected to the container,
A gas introduction mechanism that introduces raw material gas into the container,
An exhaust mechanism that evacuates the inside of the chamber and
Equipped with
In the container, the length of the first side of the polygon becomes shorter from one side to the other side of the container, and the length of the second side adjacent to the first side of the polygon becomes shorter. The length increases from one side of the container to the other side.
By using the plasma CVD method while stirring or rotating the fine particles or electronic components in the container by rotating or pendulum the container using the rotation mechanism, the fine particles or the electronic components are on the surface of the fine particles or the electronic components. Alternatively, a method for manufacturing fine particles or electronic parts, which comprises coating ultrafine particles or a thin film having a diameter smaller than that of the electronic parts.

［１８］上記［１７］において、
前記容器を回転又は振り子動作させる際、前記容器の外面に形成された第１の収容部内を第１の打刻用部材が移動して前記容器に衝突することで、前記容器に振動を与えることを特徴とする微粒子又は電子部品の製造方法。 [18] In the above [17],
When the container is rotated or pendulum-operated, the first stamping member moves in the first accommodating portion formed on the outer surface of the container and collides with the container to give vibration to the container. A method for manufacturing fine particles or electronic parts.

［１９］上記［１６］乃至［１８］のいずれか一項において、
前記超微粒子又は薄膜は絶縁物であり、
前記微粒子又は前記電子部品の表面に前記微粒子又は前記電子部品より径の小さい超微粒子又は薄膜を被覆する工程（ａ）の後に、前記微粒子又は前記電子部品を前記容器から取り出し、前記容器の表面に付着した絶縁物の膜を除去する工程（ｂ）を含み、
前記プラズマＣＶＤ装置は、
前記容器の一方側を塞ぐ部材と、
前記容器の他方側に配置され、前記容器の内部に発生するプラズマを閉じ込める機能を有する蓋部と、
を有し、
前記蓋部を、前記容器の断面の垂直方向で且つ前記容器から離れる方向に移動させる移動機構を有し、
前記工程（ｂ）は、
前記移動機構により前記蓋部を前記容器から離れる方向に移動させ、
前記容器を回転又は振り子動作させ、
前記容器内にクリーニングガスを導入し、
前記容器にプラズマパワーを供給し、
前記容器を回転又は振り子動作させることにより、前記容器の表面に付着した絶縁物の膜をプラズマクリーニングする工程であることを特徴とする微粒子又は電子部品の製造方法。 [19] In any one of the above [16] to [18],
The ultrafine particles or thin films are insulators and are
After the step (a) of coating the surface of the fine particles or the electronic component with ultrafine particles or a thin film having a diameter smaller than that of the fine particles or the electronic component, the fine particles or the electronic component are taken out from the container and placed on the surface of the container. Including the step (b) of removing the film of the adhered insulating material, the step (b) is included.
The plasma CVD apparatus is
A member that closes one side of the container and
A lid located on the other side of the container and having a function of confining plasma generated inside the container.
Have,
It has a moving mechanism for moving the lid portion in the direction perpendicular to the cross section of the container and in the direction away from the container.
The step (b) is
The lid is moved away from the container by the moving mechanism.
Rotate or pendulum the container to
Cleaning gas is introduced into the container, and
Plasma power is supplied to the container,
A method for producing fine particles or electronic components, which is a step of plasma cleaning a film of an insulator adhering to the surface of the container by rotating or operating the container.

本発明の一態様によれば、微粒子の攪拌及び混合を促進できるプラズマＣＶＤ装置、プラズマＣＶＤ方法、又は微粒子又は電子部品の製造方法を提供することができる。 According to one aspect of the present invention, it is possible to provide a plasma CVD apparatus, a plasma CVD method, or a method for producing fine particles or electronic components capable of promoting stirring and mixing of fine particles.

本発明の一態様に係るプラズマＣＶＤ装置を示す断面図である。It is sectional drawing which shows the plasma CVD apparatus which concerns on one aspect of this invention. （Ａ）は図１に示す１０１－１０１線に沿った断面図であり、（Ｂ）は（Ａ）に示す１００－１００線に沿った断面図である。(A) is a cross-sectional view taken along the line 101-101 shown in FIG. 1, and (B) is a cross-sectional view taken along the line 100-100 shown in (A). （Ａ）～（Ｄ）は振り子動作させる様子を示す断面図である。(A) to (D) are sectional views showing how the pendulum is operated. （Ａ），（Ｂ）は回転動作させる様子を示す断面図である。(A) and (B) are cross-sectional views showing a state of rotating operation. （Ａ），（Ｂ）は第１の実施形態の変形例を示す断面図である。(A) and (B) are sectional views showing a modification of the first embodiment. （Ａ）は本発明の一態様に係るプラズマＣＶＤ装置を示す断面図であり、（Ｂ）は（Ａ）に示す１０２－１０２線に沿った断面図である。(A) is a cross-sectional view showing a plasma CVD apparatus according to one aspect of the present invention, and (B) is a cross-sectional view taken along the line 102-102 shown in (A). （Ａ）～（Ｃ）は、本発明の一態様に係るプラズマＣＶＤ装置の第１容器部材２９及び第２容器部材２９ａを示す断面図である。(A) to (C) are sectional views showing the first container member 29 and the second container member 29a of the plasma CVD apparatus according to one aspect of the present invention. 様々な打刻用部材（打刻棒）の断面図である。It is sectional drawing of various stamping members (stamping rods). 本発明の一態様に係るプラズマＣＶＤ装置を示す断面図である。It is sectional drawing which shows the plasma CVD apparatus which concerns on one aspect of this invention. 図９に示す１０３－１０３線に沿った断面図である。9 is a cross-sectional view taken along the line 103-103 shown in FIG. 図１０に示す装置の第１の変形例を示す断面図である。It is sectional drawing which shows the 1st modification of the apparatus shown in FIG. 図１０に示す装置の第２の変形例を示す断面図である。It is sectional drawing which shows the 2nd modification of the apparatus shown in FIG. 本発明の一態様に係るプラズマＣＶＤ装置を示す断面図である。It is sectional drawing which shows the plasma CVD apparatus which concerns on one aspect of this invention. 図１３に示す１０４－１０４線に沿った断面図である。It is sectional drawing which follows the line 104-104 shown in FIG. 図１４に示す装置の第１の変形例を示す断面図である。It is sectional drawing which shows the 1st modification of the apparatus shown in FIG. 図１４に示す装置の第２の変形例を示す断面図である。It is sectional drawing which shows the 2nd modification of the apparatus shown in FIG. （Ａ）～（Ｄ）は、本発明の一態様に係るプラズマＣＶＤ装置を示す断面図である。(A) to (D) are sectional views showing the plasma CVD apparatus which concerns on one aspect of this invention. （Ａ），（Ｂ）は回転動作させる様子を示す断面図である。(A) and (B) are cross-sectional views showing a state of rotating operation. （Ａ），（Ｂ）は、第６の実施形態の変形例を示す断面図である。(A) and (B) are sectional views showing a modification of the sixth embodiment. 本発明の一態様に係るプラズマＣＶＤ装置を示す断面図である。It is sectional drawing which shows the plasma CVD apparatus which concerns on one aspect of this invention. 第７の実施形態の変形例を示す断面図である。It is sectional drawing which shows the modification of 7th Embodiment. 本発明の一態様に係るプラズマＣＶＤ装置を示す断面図である。It is sectional drawing which shows the plasma CVD apparatus which concerns on one aspect of this invention. 本発明の一態様に係るプラズマＣＶＤ装置を示す断面図である。It is sectional drawing which shows the plasma CVD apparatus which concerns on one aspect of this invention. 第２容器部材２９ａの表面全体又は表面の大部分が絶縁膜で覆われると、微粒子１への成膜環境が変化し、その微粒子１に被覆される薄膜の組成や膜質が変化することを確認する実験を行った結果である。It was confirmed that when the entire surface or most of the surface of the second container member 29a is covered with the insulating film, the film forming environment on the fine particles 1 changes, and the composition and film quality of the thin film coated on the fine particles 1 change. It is the result of conducting an experiment. 第７の実施形態の変形例を示す断面図である。It is sectional drawing which shows the modification of 7th Embodiment. （Ａ）は本発明の一態様に係るプラズマＣＶＤ装置を示す断面図、（Ｂ）は（Ａ）に示す第２容器部材２２９ａを１０５－１０５線で切断した一部断面図、（Ｃ）は（Ａ）に示す第２容器部材２２９ａを１８０°回転させた状態の断面図、（Ｄ）は（Ｃ）に示す第２容器部材２２９ａを１０６－１０６線で切断した一部断面図、（Ｅ）は（Ｂ）に示す第２容器部材２２９ａの展開図である。(A) is a cross-sectional view showing a plasma CVD apparatus according to one aspect of the present invention, (B) is a partial cross-sectional view of the second container member 229a shown in (A) cut along a line 105-105, and (C) is a partial cross-sectional view. A cross-sectional view of the second container member 229a shown in (A) rotated by 180 °, (D) is a partial cross-sectional view of the second container member 229a shown in (C) cut along the line 106-106, (E). ) Is a developed view of the second container member 229a shown in (B).

以下では、本発明の実施形態及び実施例について図面を用いて詳細に説明する。ただし、本発明は以下の説明に限定されず、本発明の趣旨及びその範囲から逸脱することなくその形態及び詳細を様々に変更し得ることは、当業者であれば容易に理解される。従って、本発明は以下に示す実施形態の記載内容及び実施例に限定して解釈されるものではない。 Hereinafter, embodiments and examples of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that the form and details thereof can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention is not construed as being limited to the description contents and examples of the embodiments shown below.

［第１の実施形態］
図１は、本発明の一態様に係るプラズマＣＶＤ装置を示す断面図である。図２（Ａ）は、図１に示す１０１－１０１線に沿った断面図であり、図２（Ｂ）は、図２（Ａ）に示す１００－１００線に沿った断面図であるが、ガスシャワー電極は図示していない。 [First Embodiment]
FIG. 1 is a cross-sectional view showing a plasma CVD apparatus according to an aspect of the present invention. 2 (A) is a cross-sectional view taken along the line 101-101 shown in FIG. 1, and FIG. 2 (B) is a cross-sectional view taken along the line 100-100 shown in FIG. 2 (A). Gas shower electrodes are not shown.

このプラズマＣＶＤ装置は、微粒子（又は粉体）の表面に、その微粒子より粒径の小さい超微粒子又は薄膜を被覆させるための装置である。
尚、本実施形態では、微粒子に超微粒子又は薄膜を被覆させるプラズマＣＶＤ装置について説明しているが、本実施形態によるプラズマＣＶＤ装置は、微粒子に代えて径が１ｍｍ以下の電子部品の表面にその電子部品より径の小さい微粒子又は薄膜を被覆させる装置として用いることも可能である。 This plasma CVD device is a device for coating the surface of fine particles (or powder) with ultrafine particles or a thin film having a particle size smaller than that of the fine particles.
Although the plasma CVD device for coating fine particles with ultrafine particles or a thin film is described in the present embodiment, the plasma CVD device according to the present embodiment is used on the surface of an electronic component having a diameter of 1 mm or less instead of the fine particles. It can also be used as a device for coating fine particles or thin films having a diameter smaller than that of electronic parts.

また、本実施形態では、内部断面形状が多角形である容器に微粒子を収容し、この微粒子に超微粒子又は薄膜を被覆させるプラズマＣＶＤ装置について説明しているが、容器の内部断面形状は多角形に限られず、容器の内部断面形状を円形又は楕円形にすることも可能である。容器の内部断面形状を円形とする実施形態については後述する。また、内部断面形状が多角形の容器と円形又は楕円形の容器との違いは、円形又は楕円形の容器に比べて多角形の容器の方が粒径の小さい微粒子に超微粒子又は薄膜を被覆できる点である。 Further, in the present embodiment, a plasma CVD device in which fine particles are stored in a container having a polygonal internal cross-sectional shape and the fine particles are coated with ultrafine particles or a thin film is described, but the internal cross-sectional shape of the container is polygonal. It is also possible to make the internal cross-sectional shape of the container circular or elliptical. An embodiment in which the internal cross-sectional shape of the container is circular will be described later. The difference between a container with a polygonal internal cross section and a container with a circular or oval shape is that the polygonal container coats fine particles with a smaller particle size with ultrafine particles or a thin film than the circular or oval container. It is a point that can be done.

図１及び図２（Ａ），（Ｂ）に示すように、プラズマＣＶＤ装置は円筒形状のチャンバー１３を有している。このチャンバー１３の一方端はチャンバー蓋２１ａによって閉じられており、チャンバー１３の他方端はチャンバー蓋２１ｂによって閉じられている。チャンバー１３及びチャンバー蓋２１ａ，２１ｂそれぞれはアース（接地電位）に接続されている。 As shown in FIGS. 1 and 2 (A) and 2 (B), the plasma CVD apparatus has a cylindrical chamber 13. One end of the chamber 13 is closed by the chamber lid 21a and the other end of the chamber 13 is closed by the chamber lid 21b. The chamber 13 and the chamber lids 21a and 21b are each connected to the ground (ground potential).

チャンバー１３の内部には微粒子１を収容する導電性の容器が配置されている。この容器は、第１容器部材２９と、第２容器部材２９ａと、第１のリング状部材２９ｂと、第２のリング状部材２９ｃとを有している。第１容器部材２９、第２容器部材２９ａ、第１及び第２のリング状部材２９ｂ，２９ｃそれぞれは導電性を有している。 A conductive container for accommodating the fine particles 1 is arranged inside the chamber 13. This container has a first container member 29, a second container member 29a, a first ring-shaped member 29b, and a second ring-shaped member 29c. The first container member 29, the second container member 29a, and the first and second ring-shaped members 29b and 29c each have conductivity.

チャンバー１３の内部には円筒形状の第１容器部材２９が配置されている。第１容器部材２９の一方端は閉じられており、第１容器部材２９の一方端側にはチャンバー１３の外側に延出した延出部２９ｄが形成されている。第１容器部材２９の他方端は開口されている。前記延出部２９ｄはプラズマ電源２３に電気的に接続されている。プラズマ電源２３は、高周波電力（ＲＦ出力）を供給する高周波電源、マイクロ波用電源、ＤＣ放電用電源、及びそれぞれパルス変調された高周波電源、マイクロ波用電源、ＤＣ放電用電源のいずれかであればよい。 A cylindrical first container member 29 is arranged inside the chamber 13. One end of the first container member 29 is closed, and an extension portion 29d extending to the outside of the chamber 13 is formed on one end side of the first container member 29. The other end of the first container member 29 is open. The extension portion 29d is electrically connected to the plasma power supply 23. The plasma power supply 23 may be any one of a high frequency power supply for supplying high frequency power (RF output), a microwave power supply, a DC discharge power supply, and a pulse-modulated high frequency power supply, a microwave power supply, and a DC discharge power supply, respectively. Just do it.

第１容器部材２９の内部には第２容器部材２９ａが配置されており、第２容器部材２９ａは、図２（Ａ）に示すようにその断面が六角形のバレル形状を有しており、図２（Ａ）で示す断面は重力方向に対して略平行な断面である。なお、本実施の形態では、六角形のバレル形状の第２容器部材２９ａを用いているが、これに限定されるものではなく、六角形以外の多角形のバレル形状の第２容器部材を用いることも可能である。 A second container member 29a is arranged inside the first container member 29, and the second container member 29a has a barrel shape having a hexagonal cross section as shown in FIG. 2A. The cross section shown in FIG. 2A is a cross section substantially parallel to the direction of gravity. In the present embodiment, the hexagonal barrel-shaped second container member 29a is used, but the present invention is not limited to this, and a polygonal barrel-shaped second container member other than the hexagon is used. It is also possible.

第２容器部材２９ａの一方端は第１のリング状部材２９ｂによって第１容器部材２９の内部に取り付けられており、第２容器部材２９ａの他方端は第２のリング状部材２９ｃによって第１容器部材２９の内部に取り付けられている（図１参照）。言い換えると、第１のリング状部材２９ｂは第２容器部材２９ａの一方側に位置しており、第２のリング状部材２９ｃは第２容器部材２９ａの他方側に位置している。第１及び第２のリング状部材２９ｂ、２９ｃそれぞれの外周は第１容器部材２９の内面に繋げられており、第１及び第２のリング状部材２９ｂ、２９ｃそれぞれの内周は第２容器部材２９ａの内面よりガスシャワー電極（対向電極）２１側に位置されている。また、第１容器部材２９、第２容器部材２９ａ、第１及び第２のリング状部材２９ｂ，２９ｃによって囲まれた領域は第１～第６の収容部３１ａ，３１ｂ，３１ｃ，３１ｄ，３１ｅ，３１ｆを構成する（図２参照）。つまり、第１～第６の収容部３１ａ，３１ｂ，３１ｃ，３１ｄ，３１ｅ，３１ｆそれぞれは、第２容器部材容器２９ａの外面に形成されている。 One end of the second container member 29a is attached to the inside of the first container member 29 by the first ring-shaped member 29b, and the other end of the second container member 29a is attached to the first container by the second ring-shaped member 29c. It is attached to the inside of the member 29 (see FIG. 1). In other words, the first ring-shaped member 29b is located on one side of the second container member 29a, and the second ring-shaped member 29c is located on the other side of the second container member 29a. The outer circumferences of the first and second ring-shaped members 29b and 29c are connected to the inner surface of the first container member 29, and the inner circumferences of the first and second ring-shaped members 29b and 29c are connected to the inner surface of the second container member 29. It is located on the gas shower electrode (opposite electrode) 21 side from the inner surface of 29a. Further, the area surrounded by the first container member 29, the second container member 29a, the first and second ring-shaped members 29b, 29c is the first to sixth accommodating portions 31a, 31b, 31c, 31d, 31e, It constitutes 31f (see FIG. 2). That is, each of the first to sixth accommodating portions 31a, 31b, 31c, 31d, 31e, and 31f is formed on the outer surface of the second container member container 29a.

図２（Ａ）に示すように、第１の収容部３１ａには第１の打刻用部材１１が収容されており、第２の収容部３１ｂには第２の打刻用部材１２が収容されている。第３の収容部３１ｃには第３の打刻用部材１３が収容されており、第４の収容部３１ｄには第４の打刻用部材１４が収容されている。第５の収容部３１ｅには第５の打刻用部材１５が収容されており、第６の収容部３１ｆには第６の打刻用部材１６が収容されている。第１～第６の打刻用部材１１～１６それぞれは、棒形状を有し、第２容器部材２９ａの断面の垂直方向に前記棒形状の長手方向が位置するように第１～第６の収容部３１ａ～３１ｆに収容されている（図２（Ｂ）参照）。 As shown in FIG. 2A, the first accommodating portion 31a accommodates the first engraving member 11, and the second accommodating portion 31b accommodates the second engraving member 12. Has been done. The third accommodating portion 31c accommodates the third engraving member 13, and the fourth accommodating portion 31d accommodates the fourth engraving member 14. The fifth accommodating portion 31e accommodates the fifth engraving member 15, and the sixth accommodating portion 31f accommodates the sixth engraving member 16. Each of the first to sixth stamping members 11 to 16 has a rod shape, and the first to sixth members have a rod shape so that the longitudinal direction of the rod shape is located in the vertical direction of the cross section of the second container member 29a. It is housed in the housing portions 31a to 31f (see FIG. 2B).

第２容器部材２９ａには、第１～第６の収容部３１ａ～３１ｆそれぞれの内部に位置する凸部３３ａが設けられている。第１～第６の収容部３１ａ～３１ｆそれぞれの内部を第１～第６の打刻用部材１１～１６が移動するときに、第１～第６の打刻用部材１１～１６が凸部３３ａにも衝突して引っかかる。これにより、第１～第６の打刻用部材１１～１６が位置エネルギー（急角度）をつけて強く落下し、第２容器部材２９ａに与える振動をより強くすることができる。その結果、粉体１が凝集するのを防ぎ、粉体１の攪拌及び混合を十分に促進することができる。 The second container member 29a is provided with convex portions 33a located inside each of the first to sixth accommodating portions 31a to 31f. When the first to sixth stamping members 11 to 16 move inside each of the first to sixth accommodating portions 31a to 31f, the first to sixth stamping members 11 to 16 are convex portions. It also collides with 33a and gets caught. As a result, the first to sixth stamping members 11 to 16 can be strongly dropped with potential energy (steep angle), and the vibration applied to the second container member 29a can be further strengthened. As a result, it is possible to prevent the powder 1 from aggregating and sufficiently promote the stirring and mixing of the powder 1.

第１のリング状部材２９ｂと第２のリング状部材２９ｃとの距離（即ち第２容器部材２９ａの一方端と他方端との距離）は、第１容器部材２９の一方端と他方端との距離に比べて小さい。また、第１及び第２のリング状部材２９ｂ，２９ｃそれぞれは第１容器部材２９の内側に配置されている。そして、第２容器部材２９ａの内面と第１及び第２のリング状部材２９ｂ，２９ｃによって囲まれたスペースにはコーティング対象物としての粉体（微粒子）１が収容されるようになっている。言い換えると、第２容器部材２９ａにおける多角形を構成する内面１２９ａとこの内面１２９ａを囲む第１及び第２のリング状部材それぞれの面１２９ｂ，１２９ｃ（第１及び第２のリング状部材が互いに対向する面）とによって収容面が構成され、この収容面上に微粒子１が位置されている。 The distance between the first ring-shaped member 29b and the second ring-shaped member 29c (that is, the distance between one end and the other end of the second container member 29a) is the distance between one end and the other end of the first container member 29. Small compared to the distance. Further, the first and second ring-shaped members 29b and 29c are arranged inside the first container member 29, respectively. The powder (fine particles) 1 as a coating object is accommodated in the space surrounded by the inner surface of the second container member 29a and the first and second ring-shaped members 29b and 29c. In other words, the inner surfaces 129a constituting the polygon in the second container member 29a and the surfaces 129b and 129c of the first and second ring-shaped members surrounding the inner surface 129a, respectively (the first and second ring-shaped members face each other). The accommodating surface is configured by the surface), and the fine particles 1 are located on the accommodating surface.

また、第２容器部材２９ａには、プラズマ電源２３によって高周波電力が第１容器部材２９、第１のリング状部材２９ｂ及び第２のリング状部材２９ｃを介して供給されるようになっている。それにより、第２容器部材２９ａは、電極としても機能し、前記容器の内面に収容された粉体１に高周波電力を供給することができる。 Further, high frequency power is supplied to the second container member 29a by the plasma power supply 23 via the first container member 29, the first ring-shaped member 29b, and the second ring-shaped member 29c. As a result, the second container member 29a also functions as an electrode, and can supply high-frequency power to the powder 1 contained in the inner surface of the container.

また、プラズマＣＶＤ装置は、チャンバー１３内に原料ガスを導入する原料ガス導入機構を備えている。この原料ガス導入機構は筒状のガスシャワー電極（対向電極）２１を有している。このガスシャワー電極２１は、第２容器部材２９ａ内に配置され、第２容器部材２９ａの内面に対向するように配置されている。第２容器部材２９ａの他方側には開口が形成されており、この開口からガスシャワー電極２１が挿入されている。ガスシャワー電極２１はアースに接続されている。 Further, the plasma CVD apparatus includes a raw material gas introduction mechanism for introducing the raw material gas into the chamber 13. This raw material gas introduction mechanism has a tubular gas shower electrode (counter electrode) 21. The gas shower electrode 21 is arranged in the second container member 29a and is arranged so as to face the inner surface of the second container member 29a. An opening is formed on the other side of the second container member 29a, and the gas shower electrode 21 is inserted through this opening. The gas shower electrode 21 is connected to the ground.

前記容器内に収容されている微粒子１と対向する対向面以外のガスシャワー電極（対向電極）２１の表面はアース遮蔽部材２７によって遮蔽されている。アース遮蔽部材２７は、対向電極２１の上面及び側面を覆い、且つ断面形状が曲面を有する。このアース遮蔽部材２７とガスシャワー電極２１とは５ｍｍ以下（好ましくは３ｍｍ以下）の間隔を有している。このように５ｍｍ以下の間隔とすることにより、ガスシャワー電極２１とアース遮蔽部材２７との間に位置するガスシャワー電極２１の表面にＣＶＤ膜が成膜されてしまうことを抑制できる。 The surface of the gas shower electrode (counter electrode) 21 other than the facing surface facing the fine particles 1 housed in the container is shielded by the ground shielding member 27. The ground shielding member 27 covers the upper surface and the side surface of the counter electrode 21, and has a curved cross-sectional shape. The ground shielding member 27 and the gas shower electrode 21 have a distance of 5 mm or less (preferably 3 mm or less). By setting the interval to 5 mm or less in this way, it is possible to prevent the CVD film from being formed on the surface of the gas shower electrode 21 located between the gas shower electrode 21 and the ground shielding member 27.

ガスシャワー電極２１の一方側の前記対向面には、単数又は複数の原料ガスをシャワー状に吹き出すガス吹き出し口が複数形成されている。このガス吹き出し口は、ガスシャワー電極２１の底部（前記対向面）に配置され、第２容器部材２９ａに収容された粉体１と対向するように配置されている。即ち、ガス吹き出し口は第２容器部材２９ａの内面に対向するように配置されている。また、図２（Ａ）に示すように、ガスシャワー電極２１は、重力方向に対して逆側の表面が前記逆側に凸の形状を有している。言い換えると、ガスシャワー電極２１の断面形状は、底部以外が円形又は楕円形となっている。これにより、第２容器部材２９ａを回転させているときに円形又は楕円形とされた部分（凸形状の部分）に粉体１が乗っても、その粉体１をガスシャワー電極２１から落下させることができる。 A plurality of gas outlets for blowing out a single or a plurality of raw material gases in a shower shape are formed on the facing surface on one side of the gas shower electrode 21. This gas outlet is arranged at the bottom of the gas shower electrode 21 (the facing surface), and is arranged so as to face the powder 1 contained in the second container member 29a. That is, the gas outlet is arranged so as to face the inner surface of the second container member 29a. Further, as shown in FIG. 2A, the surface of the gas shower electrode 21 on the opposite side to the direction of gravity has a convex shape on the opposite side. In other words, the cross-sectional shape of the gas shower electrode 21 is circular or elliptical except for the bottom. As a result, even if the powder 1 rides on the circular or elliptical portion (convex portion) when the second container member 29a is rotated, the powder 1 is dropped from the gas shower electrode 21. be able to.

ガスシャワー電極２１の他方側は真空バルブを介してマスフローコントローラ（ＭＦＣ）の一方側に接続されている。マスフローコントローラの他方側は図示せぬ真空バルブ及びフィルターなどを介して原料ガス発生源２０に接続されている。この原料ガス発生源２０は、粉体１に被覆する薄膜によって発生させる原料ガスの種類が異なるが、例えばＳｉＯ_２膜を成膜する場合はＳｉＨ_４ガス等を発生させるものとする。 The other side of the gas shower electrode 21 is connected to one side of the mass flow controller (MFC) via a vacuum valve. The other side of the mass flow controller is connected to the raw material gas generation source 20 via a vacuum valve, a filter, or the like (not shown). The type of raw material gas generated in the raw material gas generation source 20 differs depending on the thin film coated on the powder 1, but for example, when forming a SiO ₂ film, SiH ₄ gas or the like is generated.

また、ガスシャワー電極２１の他方側は真空バルブ（図示せず）を介して図示せぬマスフローコントローラ（ＭＦＣ）の一方側に接続されている。このマスフローコントローラの他方側はアルゴンガスボンベ（図示せず）に接続されている。 Further, the other side of the gas shower electrode 21 is connected to one side of a mass flow controller (MFC) (not shown) via a vacuum valve (not shown). The other side of this mass flow controller is connected to an argon gas cylinder (not shown).

第１容器部材２９には回転機構（図示せず）が設けられており、この回転機構によりガスシャワー電極２１を回転中心として第１容器部材２９及び第２容器部材２９ａを振り子動作又は回転動作させることで第２容器部材２９ａ内の粉体（微粒子）１を攪拌あるいは回転させながら被覆処理を行うものである。振り子動作させる場合は、図３（Ａ），（Ｂ），（Ｃ），（Ｄ）に示すようなものとなり、回転動作をさせる場合は、図４（Ａ），（Ｂ）に示すようなものとなる。前記回転機構により第１容器部材２９及び第２容器部材２９ａを回転させる際の回転軸は、略水平方向（重力方向に対して垂直方向）に平行な軸である。また、チャンバー１３内の気密性は、第１容器部材２９の回転時においても保持されている。 The first container member 29 is provided with a rotation mechanism (not shown), and the rotation mechanism causes the first container member 29 and the second container member 29a to perform a pendulum operation or a rotation operation with the gas shower electrode 21 as the center of rotation. Therefore, the coating treatment is performed while stirring or rotating the powder (fine particles) 1 in the second container member 29a. When the pendulum operation is performed, it is as shown in FIGS. 3 (A), (B), (C), and (D), and when the rotation operation is performed, it is as shown in FIGS. 4 (A) and 4 (B). It will be a thing. The rotation axis when rotating the first container member 29 and the second container member 29a by the rotation mechanism is an axis parallel to a substantially horizontal direction (direction perpendicular to the gravity direction). Further, the airtightness in the chamber 13 is maintained even when the first container member 29 is rotated.

図３（Ａ）～（Ｄ）及び図４（Ａ），（Ｂ）に示すように、第１容器部材２９及び第２容器部材２９ａを振り子動作又は回転動作させることにより、第１～第６の収容部３１ａ～３１ｆそれぞれの内部を第１～第６の打刻用部材１１～１６が移動して第２容器部材２９ａ及び第１容器部材２９に衝突する。これにより、第２容器部材２９ａを振動させることができ、その振動を粉体１に与えることができる。その結果、粉体１が凝集するのを防ぎ、粉体１の攪拌及び混合を十分に促進することができる。第１～第６の打刻用部材１１～１６それぞれが第２容器部材２９ａに直接衝突することで、第２容器部材２９ａに与える振動を強くすることができる。 As shown in FIGS. 3 (A) to 3 (D) and FIGS. 4 (A) and 4 (B), the first to sixth containers members 29 and the second container member 29a are pendulum-operated or rotated. The first to sixth stamping members 11 to 16 move inside each of the accommodating portions 31a to 31f and collide with the second container member 29a and the first container member 29. As a result, the second container member 29a can be vibrated, and the vibration can be applied to the powder 1. As a result, it is possible to prevent the powder 1 from aggregating and sufficiently promote the stirring and mixing of the powder 1. When each of the first to sixth stamping members 11 to 16 directly collides with the second container member 29a, the vibration applied to the second container member 29a can be strengthened.

図３（Ａ）～（Ｄ）及び図４（Ａ），（Ｂ）は、ガスシャワー電極２１のガス吹き出し口を下方（重力方向）に向けて、第１容器部材２９及び第２容器部材２９ａを振り子動作又は回転動作させているが、これに限らず、図５（Ａ），（Ｂ）に示すように、ガス吹き出し口が下方より傾けた向きに位置するようにガスシャワー電極２１を配置して第１容器部材２９及び第２容器部材２９ａを振り子動作又は回転動作させることも可能である。これにより、粉体１に原料ガスをよりバランス良く供給することが可能となる。 3 (A) to 3 (D) and FIGS. 4 (A) and 4 (B) show the first container member 29 and the second container member 29a with the gas outlet of the gas shower electrode 21 facing downward (in the direction of gravity). Is operated by a pendulum or a rotation, but the gas shower electrode 21 is arranged so that the gas outlet is located in a direction inclined from below as shown in FIGS. 5 (A) and 5 (B). Then, the first container member 29 and the second container member 29a can be pendulum-operated or rotated. This makes it possible to supply the raw material gas to the powder 1 in a more balanced manner.

また、プラズマＣＶＤ装置は、チャンバー１３内を真空排気する真空排気機構を備えている。例えば、チャンバー１３には排気口（図示せず）が複数設けられており、排気口は真空ポンプ（図示せず）に接続されている。また、ガスシャワー電極２１はヒーター（図示せず）を有している。 Further, the plasma CVD apparatus includes a vacuum exhaust mechanism for evacuating the inside of the chamber 13. For example, the chamber 13 is provided with a plurality of exhaust ports (not shown), and the exhaust ports are connected to a vacuum pump (not shown). Further, the gas shower electrode 21 has a heater (not shown).

また、プラズマ電源２３は、５０～５００ｋＨｚの高周波電源を用いることが好ましく、より好ましくは１００～３００ｋＨｚの高周波電源を用いることである。このように周波数の低い電源を用いることにより、５００ｋＨｚより高い周波数の電源を用いた場合に比べて、ガスシャワー電極２１と第２容器部材２９ａとの間より外側にプラズマが分散するのを抑制することができる。言い換えると、ガスシャワー電極２１と第２容器部材２９ａとの間にプラズマを閉じ込めることができる。５０～５００ｋＨｚのＲＦプラズマを用いると、このような閉じられたプラズマ空間内、すなわちバレル（第２容器部材２９ａ）内で誘導加熱が起こりづらく、かつ成膜時に十分なＶ_ＤＣが基板にかかるので、硬質ＤＬＣ膜が容易に形成しやすい。逆に１３．５６ＭＨｚのようなＲＦプラズマを用いると、閉じられたプラズマ空間では、基板にＶ_ＤＣがかかりづらいので硬質ＤＬＣ膜が形成しにくい。 Further, as the plasma power supply 23, it is preferable to use a high frequency power supply of 50 to 500 kHz, and more preferably a high frequency power supply of 100 to 300 kHz is used. By using a power supply having a low frequency in this way, it is possible to suppress the dispersion of plasma outside between the gas shower electrode 21 and the second container member 29a as compared with the case where a power supply having a frequency higher than 500 kHz is used. be able to. In other words, plasma can be confined between the gas shower electrode 21 and the second container member 29a. When RF plasma of 50 to 500 kHz is used, induction heating is unlikely to occur in such a closed plasma space, that is, in the barrel (second container member 29a), and sufficient _VDC is applied to the substrate during film formation. , The hard DLC film is easily formed. On the contrary, when RF plasma such as 13.56 MHz is used, it is difficult to apply _VDC to the substrate in a closed plasma space, so that a hard DLC film is difficult to form.

次に、上記プラズマＣＶＤ装置を用いて粉体に超微粒子又は薄膜を被覆するプラズマＣＶＤ方法について説明する。ここでは、コーティング対象の微粒子１としてＰＭＭＡ（ポリメタクリル酸メチル）を用い、そのＰＭＭＡの微粒子にＤＬＣを被覆するものを例にとり説明する。 Next, a plasma CVD method for coating powder with ultrafine particles or a thin film using the plasma CVD apparatus will be described. Here, PMMA (polymethylmethacrylate) is used as the fine particles 1 to be coated, and the PMMA fine particles coated with DLC will be described as an example.

まず、複数の微粒子からなる粉体（ＰＭＭＡ）１を第２容器部材２９ａ内に収容する。粉体１の平均粒径は５０μｍ程度である。なお、ここでは、粉体１としてＰＭＭＡの微粒子を用いているが、他の粉体を用いることが可能である。 First, the powder (PMMA) 1 composed of a plurality of fine particles is housed in the second container member 29a. The average particle size of the powder 1 is about 50 μm. Although PMMA fine particles are used as the powder 1 here, other powders can be used.

この後、真空ポンプを作動させることによりチャンバー１３内を所定の圧力（例えば５×１０^－５Ｔｏｒｒ程度）まで減圧する。これと共に、回転機構により第１容器部材２９及び第２容器部材２９ａを回転させることで、第２容器部材２９ａの内部に収容された粉末（微粒子）１が容器内面において攪拌又は回転される（図４（Ａ），（Ｂ）参照）。なお、ここでは、第１容器部材２９及び第２容器部材２９ａを回転させているが、第１容器部材２９及び第２容器部材２９ａを回転機構によって振り子動作させることも可能である（図３（Ａ）～（Ｄ））。 After that, by operating the vacuum pump, the pressure inside the chamber 13 is reduced to a predetermined pressure (for example, about 5 × ^10-5 Torr). At the same time, by rotating the first container member 29 and the second container member 29a by the rotation mechanism, the powder (fine particles) 1 contained in the second container member 29a is stirred or rotated on the inner surface of the container (FIG. 4 (See (A) and (B)). Although the first container member 29 and the second container member 29a are rotated here, it is also possible to move the first container member 29 and the second container member 29a by a rotation mechanism (FIG. 3 (FIG. 3). A)-(D)).

第１容器部材２９及び第２容器部材２９ａを回転又は振り子動作させることにより、第１～第６の収容部３１ａ～３１ｆ内を第１～第６の打刻用部材１１～１６が移動して第２容器部材２９ａに衝突することで、第２容器部材２９ａに振動を与えることができる。その結果、第２容器部材２９ａ内の粉体１に振動を与えることができる。よって、粉体１が凝集するのを防ぎ、粉体１の攪拌及び混合を促進させることができる。 By rotating or penduluming the first container member 29 and the second container member 29a, the first to sixth stamping members 11 to 16 move within the first to sixth accommodating portions 31a to 31f. By colliding with the second container member 29a, vibration can be applied to the second container member 29a. As a result, the powder 1 in the second container member 29a can be vibrated. Therefore, it is possible to prevent the powder 1 from aggregating and promote stirring and mixing of the powder 1.

次いで、原料ガス発生源２０において原料ガスとして例えばトルエン（Ｃ_７Ｈ_８）を発生させ、マスフローコントローラによってトルエンを７ｃｃ／分の流量に制御し、アルゴンガスボンベから供給されたアルゴンガスを５ｃｃ／分の流量に制御し、これら流量制御されたトルエン及びアルゴンガスをガスシャワー電極２１の内側に導入する。そして、ガスシャワー電極２１のガス吹き出し口からトルエン及びアルゴンガスを吹き出させる。これにより、第２容器部材２９ａ内を攪拌又は回転しながら動いている微粒子１にトルエン及びアルゴンガスが吹き付けられ、制御されたガス流量と排気能力のバランスによって、ＣＶＤ法による成膜に適した圧力に保たれる。 Next, for example, toluene (C ₇ H ₈ ) is generated as the raw material gas in the raw material gas generation source 20, the toluene is controlled to a flow rate of 7 cc / min by the mass flow controller, and the argon gas supplied from the argon gas bomb is 5 cc / min. The flow rate is controlled, and these flow-controlled toluene and argon gases are introduced inside the gas shower electrode 21. Then, toluene and argon gas are blown out from the gas outlet of the gas shower electrode 21. As a result, toluene and argon gas are sprayed onto the fine particles 1 moving while stirring or rotating in the second container member 29a, and the pressure suitable for film formation by the CVD method is achieved by the balance between the controlled gas flow rate and the exhaust capacity. Is kept in.

この後、第１容器部材２９にプラズマ電源２３の一例である高周波電源（ＲＦ電源）から１５０Ｗで２５０ｋＨｚのＲＦ出力が供給される。これにより、第１容器部材２９及び第１、第２のリング状部材２９ｂ，２９ｃを通して第２容器部材２９ａと粉体１にＲＦ出力が供給される。この際、ガスシャワー電極２１は接地電位に接続されている。これにより、ガスシャワー電極２１と第２容器部材２９ａとの間にプラズマが着火され、第２容器部材２９ａ内にプラズマが発生され、ＤＬＣからなる超微粒子又は薄膜がＰＭＭＡの微粒子１の表面に被覆される。つまり、第２容器部材２９ａを回転させることによって微粒子１を攪拌し、回転させているため、微粒子１の表面全体に薄膜を均一に被覆することが容易にできる。 After that, an RF output of 250 kHz at 150 W is supplied to the first container member 29 from a high frequency power supply (RF power supply) which is an example of the plasma power supply 23. As a result, RF output is supplied to the second container member 29a and the powder 1 through the first container member 29 and the first and second ring-shaped members 29b and 29c. At this time, the gas shower electrode 21 is connected to the ground potential. As a result, plasma is ignited between the gas shower electrode 21 and the second container member 29a, plasma is generated in the second container member 29a, and ultrafine particles or a thin film made of DLC coat the surface of the fine particles 1 of PMMA. Will be done. That is, since the fine particles 1 are agitated and rotated by rotating the second container member 29a, it is easy to uniformly cover the entire surface of the fine particles 1.

また、上記の方法により、微粒子１の表面に超微粒子又は薄膜を被覆した微粒子を製造することができる。 Further, by the above method, it is possible to produce fine particles in which the surface of the fine particles 1 is coated with ultrafine particles or a thin film.

上記実施形態によれば、六角形のバレル形状の第２容器部材２９ａ自体を回転させることで粉体１自体を回転させ攪拌でき、更にバレルを六角形とすることにより、粉体１を重力により定期的に落下させることができる。このため、粉体１を攪拌することができ、粉体を扱う時にしばしば問題となる水分や静電気力による粉体の凝集を防ぐことができる。したがって、粒径の非常に小さい微粒子１にその微粒子より粒径が更に小さい超微粒子又は薄膜を被覆することが可能となる。具体的には、粒径が５０μｍ以下の微粒子（特に５μｍ以下の微粒子）に超微粒子又は薄膜を被覆することが可能となる。 According to the above embodiment, the powder 1 itself can be rotated and agitated by rotating the second container member 29a itself having a hexagonal barrel shape, and the powder 1 can be rotated by gravity by making the barrel hexagonal. It can be dropped regularly. Therefore, the powder 1 can be agitated, and the agglomeration of the powder due to moisture or electrostatic force, which is often a problem when handling the powder, can be prevented. Therefore, it is possible to coat the fine particles 1 having a very small particle size with ultrafine particles or a thin film having a smaller particle size than the fine particles. Specifically, it is possible to coat fine particles having a particle size of 50 μm or less (particularly fine particles having a particle size of 5 μm or less) with ultrafine particles or a thin film.

また、本実施の形態では、上述したように、第１～第６の収容部３１ａ～３１ｆ内を第１～第６の打刻用部材１１～１６が移動して第２容器部材２９ａに衝突することで、第２容器部材２９ａに振動を与えることができる。その結果、第２容器部材２９ａ内に収容された粉体１に振動を与えることができ、粉体１の攪拌及び混合を促進させることができる。従って、より小さい粒径を有する微粒子１に対しても均一性良く超微粒子又は薄膜を被覆することが可能となる。 Further, in the present embodiment, as described above, the first to sixth stamping members 11 to 16 move in the first to sixth accommodating portions 31a to 31f and collide with the second container member 29a. By doing so, vibration can be given to the second container member 29a. As a result, the powder 1 housed in the second container member 29a can be vibrated, and the stirring and mixing of the powder 1 can be promoted. Therefore, it is possible to uniformly coat the ultrafine particles or the thin film even with respect to the fine particles 1 having a smaller particle size.

なお、本実施形態では、第１～第６の収容部３１ａ～３１ｆの全てに打刻用部材１１～１６が収容されているが、これに限定されるものではなく、少なくとも一つの収容部に少なくとも一つの打刻用部材が収容されているとよい。 In the present embodiment, the stamping members 11 to 16 are accommodated in all of the first to sixth accommodating portions 31a to 31f, but the present invention is not limited to this, and the engraving members 11 to 16 are accommodated in at least one accommodating portion. It is preferable that at least one stamping member is housed.

［第２の実施形態］
図６（Ａ）は、本発明の一態様に係るプラズマＣＶＤ装置を示す断面図であり、図６（Ｂ）は、図６（Ａ）に示す１０２－１０２線に沿った断面図である。図６（Ａ），（Ｂ）において図１及び図２（Ａ）と同一部分には同一符号を付し、異なる部分についてのみ説明する。 [Second Embodiment]
6 (A) is a cross-sectional view showing a plasma CVD apparatus according to one aspect of the present invention, and FIG. 6 (B) is a cross-sectional view taken along the line 102-102 shown in FIG. 6 (A). In FIGS. 6A and 6B, the same parts as those in FIGS. 1 and 2A are designated by the same reference numerals, and only different parts will be described.

図６（Ａ）に示すプラズマＣＶＤ装置は、アース遮蔽部材２７に振動を加える振動機構４１を有する。この振動機構４１は、例えばノッカー、バイブレーター、超音波振動モーターを用いることができる。 The plasma CVD apparatus shown in FIG. 6A has a vibration mechanism 41 that applies vibration to the ground shielding member 27. As the vibration mechanism 41, for example, a knocker, a vibrator, or an ultrasonic vibration motor can be used.

本実施形態においても第１の実施形態と同様の効果を得ることができる。
また、振動機構４１によりアース遮蔽部材２７に振動を加えることで、アース遮蔽部材２７の上の微粒子１を図６（Ｂ）に示すように第２容器部材２９ａに落とすことができる。特に、アース遮蔽部材２７の断面形状が曲面を有するため、アース遮蔽部材２７に加えられる振動が弱くても、アース遮蔽部材２７の上の微粒子１を落とすことができる。 Also in this embodiment, the same effect as that of the first embodiment can be obtained.
Further, by applying vibration to the ground shielding member 27 by the vibration mechanism 41, the fine particles 1 on the ground shielding member 27 can be dropped onto the second container member 29a as shown in FIG. 6 (B). In particular, since the cross-sectional shape of the ground shielding member 27 has a curved surface, even if the vibration applied to the ground shielding member 27 is weak, the fine particles 1 on the ground shielding member 27 can be dropped.

［第３の実施形態］
図７（Ａ）～（Ｃ）は、本発明の一態様に係るプラズマＣＶＤ装置の第１容器部材２９及び第２容器部材２９ａを示す断面図である。また、図７（Ａ）～（Ｃ）は、第１～第６の収容部３１ａ～３１ｆそれぞれの内部を第１～第６の打刻用部材１１～１６が移動して第２容器部材２９ａ及び第１容器部材２９に衝突する様子を示している。 [Third Embodiment]
7 (A) to 7 (C) are cross-sectional views showing a first container member 29 and a second container member 29a of the plasma CVD apparatus according to one aspect of the present invention. Further, in FIGS. 7A to 7C, the first to sixth stamping members 11 to 16 move inside each of the first to sixth accommodating portions 31a to 31f, and the second container member 29a And the state of collision with the first container member 29 are shown.

図７（Ａ）～（Ｃ）において、図１及び図２（Ａ）と同一部分には同一符号を付し、異なる部分についてのみ説明する。 In FIGS. 7A to 7C, the same parts as those in FIGS. 1 and 2A are designated by the same reference numerals, and only different parts will be described.

第１容器部材２９には、第１～第６の収容部３１ａ～３１ｆそれぞれの内部に位置する凸部３３ｂが設けられている。第１～第６の収容部３１ａ～３１ｆそれぞれの内部を第１～第６の打刻用部材１１～１６が移動するときに、第１～第６の打刻用部材１１～１６が凸部３３ｂにも衝突して引っかかる。これにより、第１～第６の打刻用部材１１～１６が位置エネルギー（急角度）をつけて強く落下し、第２容器部材２９ａに与える振動をより強くすることができる。その結果、粉体１が凝集するのを防ぎ、粉体１の攪拌及び混合を十分に促進することができる。 The first container member 29 is provided with convex portions 33b located inside each of the first to sixth accommodating portions 31a to 31f. When the first to sixth stamping members 11 to 16 move inside each of the first to sixth accommodating portions 31a to 31f, the first to sixth stamping members 11 to 16 are convex portions. It also collides with 33b and gets caught. As a result, the first to sixth stamping members 11 to 16 can be strongly dropped with potential energy (steep angle), and the vibration applied to the second container member 29a can be further strengthened. As a result, it is possible to prevent the powder 1 from aggregating and sufficiently promote the stirring and mixing of the powder 1.

図８は、様々な打刻用部材（打刻棒）の断面図であり、これらは図７（Ａ）～（Ｃ）に示す第１～第６の打刻用部材１１～１６として適用することができる。図８に示すように、打刻用部材の断面形状は種々な多角形のものを用いることができる。また打刻用部材１１の表面は、その内部とは異なる材質の膜１１ａで被覆されているとよい。打刻用部材１１の内部の材質が例えばＳＵＳ３０４である場合、膜１１ａはアルミナを用いるとよい。打刻用部材１１の材質を変更することで、打刻用部材１１の重さを変えることができる。 FIG. 8 is a cross-sectional view of various stamping members (stamping rods), and these are applied as the first to sixth stamping members 11 to 16 shown in FIGS. 7A to 7C. be able to. As shown in FIG. 8, various polygonal shapes can be used as the cross-sectional shape of the stamping member. Further, it is preferable that the surface of the stamping member 11 is covered with a film 11a made of a material different from the inside thereof. When the material inside the stamping member 11 is, for example, SUS304, alumina may be used for the film 11a. By changing the material of the stamping member 11, the weight of the stamping member 11 can be changed.

［第４の実施形態］
図９は、本発明の一態様に係るプラズマＣＶＤ装置を示す断面図である。図１０は、図９に示す１０３－１０３線に沿った断面図であるが、ガスシャワー電極は図示していない。 [Fourth Embodiment]
FIG. 9 is a cross-sectional view showing a plasma CVD apparatus according to one aspect of the present invention. FIG. 10 is a cross-sectional view taken along the line 103-103 shown in FIG. 9, but the gas shower electrode is not shown.

図９及び図１０において図２（Ａ），（Ｂ）と同一部分には同一符号を付し、異なる部分についてのみ説明する。 In FIGS. 9 and 10, the same parts as those in FIGS. 2A and 2B are designated by the same reference numerals, and only different parts will be described.

図１０に示す収容部は軸方向（第２容器部材２９ａの断面の垂直方向）に２分割されている。つまり、図９及び図１０に示すように、第２容器部材容器２９ａの外面には第１～第６の収容部３１ａ，３１ｂ，３１ｃ，３１ｄ，３１ｅ，３１ｆが形成されている。また、第２容器部材容器２９ａの外面には、第１～第６の収容部３１ａ，３１ｂ，３１ｃ，３１ｄ，３１ｅ，３１ｆそれぞれの隣で且つ第２容器部材２９ａの断面の垂直方向に位置する第７の収容部５５１ａ、第８の収容部（図示せず）、第９の収容部（図示せず）、第１０の収容部５５１ｄ、第１１の収容部（図示せず）及び第１２の収容部（図示せず）が形成されている。 The accommodating portion shown in FIG. 10 is divided into two in the axial direction (vertical direction of the cross section of the second container member 29a). That is, as shown in FIGS. 9 and 10, the first to sixth accommodating portions 31a, 31b, 31c, 31d, 31e, 31f are formed on the outer surface of the second container member container 29a. Further, on the outer surface of the second container member container 29a, it is located next to each of the first to sixth accommodating portions 31a, 31b, 31c, 31d, 31e, 31f and in the vertical direction of the cross section of the second container member 29a. A seventh accommodating portion 551a, an eighth accommodating portion (not shown), a ninth accommodating portion (not shown), a tenth accommodating portion 551d, an eleventh accommodating portion (not shown), and a twelfth accommodating portion. A containment section (not shown) is formed.

図１０に示すように、第７の収容部５５１ａは、第１の収容部３１ａの隣で且つ第２容器部材２９ａの断面の垂直方向に位置している。第１０の収容部５５１ｄは、第４の収容部３１ｄの隣で且つ第２容器部材２９ａの断面の垂直方向に位置している。 As shown in FIG. 10, the seventh accommodating portion 551a is located next to the first accommodating portion 31a and in the vertical direction of the cross section of the second container member 29a. The tenth accommodating portion 551d is located next to the fourth accommodating portion 31d and in the vertical direction of the cross section of the second container member 29a.

第１の収容部３１ａには第１の打刻用部材４１が収容されており、第２の収容部３１ｂには第２の打刻用部材４２が収容されている。第３の収容部３１ｃには第３の打刻用部材４３が収容されており、第４の収容部３１ｄには第４の打刻用部材４４が収容されている。第５の収容部３１ｅには第５の打刻用部材４５が収容されており、第６の収容部３１ｆには第６の打刻用部材４６が収容されている。 The first accommodating portion 31a accommodates the first engraving member 41, and the second accommodating portion 31b accommodates the second engraving member 42. A third stamping member 43 is housed in the third storage section 31c, and a fourth stamping member 44 is housed in the fourth storage section 31d. The fifth accommodating portion 31e accommodates the fifth engraving member 45, and the sixth accommodating portion 31f accommodates the sixth engraving member 46.

第７の収容部５５１ａには第７の打刻用部材５１が収容されており、第８の収容部（図示せず）には第８の打刻用部材（図示せず）が収容されている。第９の収容部（図示せず）には第９の打刻用部材（図示せず）が収容されており、第１０の収容部５５１ｄには第１０の打刻用部材５４が収容されている。第１１の収容部（図示せず）には第１１の打刻用部材（図示せず）が収容されており、第１２の収容部（図示せず）には第１２の打刻用部材（図示せず）が収容されている。なお、第７の収容部５５１ａは第２の収容部と読み替えてもよく、第７の打刻用部材５１は第２の打刻用部材と読み替えてもよい。 The seventh accommodating portion 551a accommodates the seventh engraving member 51, and the eighth accommodating portion (not shown) accommodates the eighth engraving member (not shown). There is. The ninth accommodating portion (not shown) accommodates the ninth engraving member (not shown), and the tenth accommodating portion 551d accommodates the tenth embossing member 54. There is. The eleventh accommodating portion (not shown) accommodates the eleventh stamping member (not shown), and the twelfth accommodating portion (not shown) accommodates the twelfth engraving member (not shown). (Not shown) is housed. The seventh accommodating portion 551a may be read as the second accommodating portion, and the seventh engraving member 51 may be read as the second engraving member.

本実施形態においても第１の実施形態と同様の効果を得ることができる。
また、本実施の形態では、収容部を軸方向に分割しているため、第２容器部材２９ａを大きくしてもより細かく振動を与えることができる。その結果、第２容器部材２９ａ内に収容された粉体１の量が増えてもより全体的に振動を与えることができ、粉体１の攪拌及び混合を促進させることができる。 Also in this embodiment, the same effect as that of the first embodiment can be obtained.
Further, in the present embodiment, since the accommodating portion is divided in the axial direction, even if the second container member 29a is enlarged, vibration can be applied more finely. As a result, even if the amount of the powder 1 contained in the second container member 29a is increased, the vibration can be given more as a whole, and the stirring and mixing of the powder 1 can be promoted.

＜第１の変形例＞
図１１は、図１０に示す装置の第１の変形例を示す断面図である。
図１１に示す収容部は軸方向（第２容器部材２９ａの断面の垂直方向）に３分割されている。つまり、図１１に示すように、第２容器部材容器２９ａの外面には第１～第６の収容部３１ａ，３１ｄが形成されている。また、第２容器部材容器２９ａの外面には、第１～第６の収容部３１ａ，３１ｄそれぞれの隣で且つ第２容器部材２９ａの断面の垂直方向に位置する第７の収容部５７１ａ、第８の収容部（図示せず）、第９の収容部（図示せず）、第１０の収容部５７１ｄ、第１１の収容部（図示せず）及び第１２の収容部（図示せず）が形成されている。また、第２容器部材容器２９ａの外面には、第７～第１２の収容部５７１ａ，５７１ｄそれぞれの隣で且つ第２容器部材２９ａの断面の垂直方向に位置する第１３の収容部５８１ａ、第１４の収容部（図示せず）、第１５の収容部（図示せず）、第１６の収容部５８１ｄ、第１７の収容部（図示せず）及び第１８の収容部（図示せず）が形成されている。 <First modification>
FIG. 11 is a cross-sectional view showing a first modification of the apparatus shown in FIG.
The accommodating portion shown in FIG. 11 is divided into three in the axial direction (vertical direction of the cross section of the second container member 29a). That is, as shown in FIG. 11, the first to sixth accommodating portions 31a and 31d are formed on the outer surface of the second container member container 29a. Further, on the outer surface of the second container member container 29a, the seventh accommodating portion 571a, which is located next to each of the first to sixth accommodating portions 31a and 31d and in the vertical direction of the cross section of the second container member 29a, Eighth accommodation (not shown), ninth accommodation (not shown), tenth accommodation 571d, eleventh accommodation (not shown) and twelfth accommodation (not shown) It is formed. Further, on the outer surface of the second container member container 29a, a thirteenth accommodating portion 581a, a thirteenth accommodating portion 581a, which is located next to each of the seventh to twelfth accommodating portions 571a and 571d and in the vertical direction of the cross section of the second container member 29a. 14 accommodations (not shown), 15th accommodation (not shown), 16th accommodation 581d, 17th accommodation (not shown) and 18th accommodation (not shown) It is formed.

図１１に示すように、第１３の収容部５８１ａは、第７の収容部５７１ａの隣で且つ第２容器部材２９ａの断面の垂直方向に位置している。第１６の収容部５８１ｄは、第１０の収容部５７１ｄの隣で且つ第２容器部材２９ａの断面の垂直方向に位置している。 As shown in FIG. 11, the thirteenth accommodating portion 581a is located next to the seventh accommodating portion 571a and in the vertical direction of the cross section of the second container member 29a. The 16th accommodating portion 581d is located next to the 10th accommodating portion 571d and in the vertical direction of the cross section of the second container member 29a.

第１の収容部３１ａには第１の打刻用部材６１が収容されており、第２の収容部（図示せず）には第２の打刻用部材（図示せず）が収容されている。第３の収容部（図示せず）には第３の打刻用部材（図示せず）が収容されており、第４の収容部３１ｄには第４の打刻用部材６４が収容されている。第５の収容部（図示せず）には第５の打刻用部材（図示せず）が収容されており、第６の収容部（図示せず）には第６の打刻用部材（図示せず）が収容されている。 The first accommodating portion 31a accommodates the first engraving member 61, and the second accommodating portion (not shown) accommodates the second engraving member (not shown). There is. A third stamping member (not shown) is housed in the third storage section (not shown), and a fourth stamping member 64 is housed in the fourth storage section 31d. There is. A fifth engraving member (not shown) is accommodated in the fifth accommodating portion (not shown), and a sixth engraving member (not shown) is accommodated in the sixth accommodating portion (not shown). (Not shown) is housed.

第７の収容部５７１ａには第７の打刻用部材７１が収容されており、第８の収容部（図示せず）には第８の打刻用部材（図示せず）が収容されている。第９の収容部（図示せず）には第９の打刻用部材（図示せず）が収容されており、第１０の収容部５７１ｄには第１０の打刻用部材７４が収容されている。第１１の収容部（図示せず）には第１１の打刻用部材（図示せず）が収容されており、第１２の収容部（図示せず）には第１２の打刻用部材（図示せず）が収容されている。 The seventh accommodating portion 571a accommodates the seventh engraving member 71, and the eighth accommodating portion (not shown) accommodates the eighth engraving member (not shown). There is. The ninth accommodating portion (not shown) accommodates the ninth engraving member (not shown), and the tenth accommodating portion 571d accommodates the tenth embossing member 74. There is. The eleventh accommodating portion (not shown) accommodates the eleventh stamping member (not shown), and the twelfth accommodating portion (not shown) accommodates the twelfth engraving member (not shown). (Not shown) is housed.

第１３の収容部５８１ａには第１３の打刻用部材８１が収容されており、第１４の収容部（図示せず）には第１４の打刻用部材（図示せず）が収容されている。第１５の収容部（図示せず）には第１５の打刻用部材（図示せず）が収容されており、第１６の収容部５８１ｄには第１６の打刻用部材８４が収容されている。第１７の収容部（図示せず）には第１７の打刻用部材（図示せず）が収容されており、第１８の収容部（図示せず）には第１８の打刻用部材（図示せず）が収容されている。 The thirteenth stamping member 81 is housed in the thirteenth housing section 581a, and the fourteenth stamping member (not shown) is housed in the fourteenth storage section (not shown). There is. A fifteenth stamping member (not shown) is housed in a fifteenth housing section (not shown), and a sixteenth stamping member 84 is housed in a sixteenth housing section 581d. There is. The 17th accommodating portion (not shown) accommodates the 17th engraving member (not shown), and the 18th accommodating portion (not shown) accommodates the 18th engraving member (not shown). (Not shown) is housed.

第１の変形例においても本実施形態と同様の効果を得ることができる。 The same effect as that of the present embodiment can be obtained in the first modification.

＜第２の変形例＞
図１２は、図１０に示す装置の第２の変形例を示す断面図である。
図１２に示す収容部は軸方向（第２容器部材２９ａの断面の垂直方向）に４分割されている。つまり、図１２に示すように、第２容器部材容器２９ａの外面には第１～第６の収容部３１ａ，３１ｄが形成されている。また、第２容器部材容器２９ａの外面には、第１～第６の収容部３１ａ，３１ｄそれぞれの隣で且つ第２容器部材２９ａの断面の垂直方向に位置する第７の収容部６２１ａ、第８の収容部（図示せず）、第９の収容部（図示せず）、第１０の収容部６２１ｄ、第１１の収容部（図示せず）及び第１２の収容部（図示せず）が形成されている。また、第２容器部材容器２９ａの外面には、第７～第１２の収容部６２１ａ，６２１ｄそれぞれの隣で且つ第２容器部材２９ａの断面の垂直方向に位置する第１３の収容部６３１ａ、第１４の収容部（図示せず）、第１５の収容部（図示せず）、第１６の収容部６３１ｄ、第１７の収容部（図示せず）及び第１８の収容部（図示せず）が形成されている。また、第２容器部材容器２９ａの外面には、第１３～第１８の収容部６３１ａ，６３１ｄそれぞれの隣で且つ第２容器部材２９ａの断面の垂直方向に位置する第１９の収容部６４１ａ、第２０の収容部（図示せず）、第２１の収容部（図示せず）、第２２の収容部６４１ｄ、第２３の収容部（図示せず）及び第２４の収容部（図示せず）が形成されている。 <Second modification>
FIG. 12 is a cross-sectional view showing a second modification of the apparatus shown in FIG.
The accommodating portion shown in FIG. 12 is divided into four in the axial direction (vertical direction of the cross section of the second container member 29a). That is, as shown in FIG. 12, the first to sixth accommodating portions 31a and 31d are formed on the outer surface of the second container member container 29a. Further, on the outer surface of the second container member container 29a, the seventh accommodating portion 621a, which is located next to each of the first to sixth accommodating portions 31a and 31d and in the vertical direction of the cross section of the second container member 29a, Eighth accommodation (not shown), ninth accommodation (not shown), tenth accommodation 621d, eleventh accommodation (not shown) and twelfth accommodation (not shown) It is formed. Further, on the outer surface of the second container member container 29a, the thirteenth accommodating portion 631a, which is located next to each of the seventh to twelfth accommodating portions 621a and 621d and in the vertical direction of the cross section of the second container member 29a. 14 accommodations (not shown), 15th accommodation (not shown), 16th accommodation 631d, 17th accommodation (not shown) and 18th accommodation (not shown) It is formed. Further, on the outer surface of the second container member container 29a, the 19th accommodating portion 641a, which is located next to each of the 13th to 18th accommodating portions 631a and 631d and in the vertical direction of the cross section of the second container member 29a. 20 accommodations (not shown), 21st accommodation (not shown), 22nd accommodation 641d, 23rd accommodation (not shown) and 24th accommodation (not shown) It is formed.

第１の収容部３１ａには第１の打刻用部材１１１が収容されており、第２の収容部（図示せず）には第２の打刻用部材（図示せず）が収容されている。第３の収容部（図示せず）には第３の打刻用部材（図示せず）が収容されており、第４の収容部３１ｄには第４の打刻用部材１１４が収容されている。第５の収容部（図示せず）には第５の打刻用部材（図示せず）が収容されており、第６の収容部（図示せず）には第６の打刻用部材（図示せず）が収容されている。 The first accommodating portion 31a accommodates the first engraving member 111, and the second accommodating portion (not shown) accommodates the second engraving member (not shown). There is. A third stamping member (not shown) is housed in the third storage section (not shown), and a fourth stamping member 114 is housed in the fourth storage section 31d. There is. A fifth engraving member (not shown) is accommodated in the fifth accommodating portion (not shown), and a sixth engraving member (not shown) is accommodated in the sixth accommodating portion (not shown). (Not shown) is housed.

第７の収容部６２１ａには第７の打刻用部材１２１が収容されており、第８の収容部（図示せず）には第８の打刻用部材（図示せず）が収容されている。第９の収容部（図示せず）には第９の打刻用部材（図示せず）が収容されており、第１０の収容部６２１ｄには第１０の打刻用部材１２４が収容されている。第１１の収容部（図示せず）には第１１の打刻用部材（図示せず）が収容されており、第１２の収容部（図示せず）には第１２の打刻用部材（図示せず）が収容されている。 The seventh accommodating portion 621a accommodates the seventh engraving member 121, and the eighth accommodating portion (not shown) accommodates the eighth engraving member (not shown). There is. The ninth accommodating portion (not shown) accommodates the ninth engraving member (not shown), and the tenth accommodating portion 621d accommodates the tenth embossing member 124. There is. The eleventh accommodating portion (not shown) accommodates the eleventh stamping member (not shown), and the twelfth accommodating portion (not shown) accommodates the twelfth engraving member (not shown). (Not shown) is housed.

第１３の収容部６３１ａには第１３の打刻用部材１３１が収容されており、第１４の収容部（図示せず）には第１４の打刻用部材（図示せず）が収容されている。第１５の収容部（図示せず）には第１５の打刻用部材（図示せず）が収容されており、第１６の収容部６３１ｄには第１６の打刻用部材１３４が収容されている。第１７の収容部（図示せず）には第１７の打刻用部材（図示せず）が収容されており、第１８の収容部（図示せず）には第１８の打刻用部材（図示せず）が収容されている。 The thirteenth embossing member 131 is accommodated in the thirteenth accommodating portion 631a, and the fourteenth embossing member (not shown) is accommodated in the fourteenth accommodating portion (not shown). There is. The fifteenth accommodating portion (not shown) accommodates the fifteenth engraving member (not shown), and the sixteenth accommodating portion 631d accommodates the sixteenth embossing member 134. There is. The 17th accommodating portion (not shown) accommodates the 17th engraving member (not shown), and the 18th accommodating portion (not shown) accommodates the 18th engraving member (not shown). (Not shown) is housed.

第１９の収容部６４１ａには第１９の打刻用部材１４１が収容されており、第２０の収容部（図示せず）には第２０の打刻用部材（図示せず）が収容されている。第２１の収容部（図示せず）には第２１の打刻用部材（図示せず）が収容されており、第２２の収容部６４１ｄには第２２の打刻用部材１４４が収容されている。第２３の収容部（図示せず）には第２３の打刻用部材（図示せず）が収容されており、第２４の収容部（図示せず）には第２４の打刻用部材（図示せず）が収容されている。 The 19th embossing member 141 is accommodated in the 19th accommodating portion 641a, and the 20th embossing member (not shown) is accommodated in the 20th accommodating portion (not shown). There is. The 21st accommodating portion (not shown) accommodates the 21st engraving member (not shown), and the 22nd accommodating portion 641d accommodates the 22nd engraving member 144. There is. The 23rd accommodating portion (not shown) accommodates the 23rd engraving member (not shown), and the 24th accommodating portion (not shown) accommodates the 24th engraving member (not shown). (Not shown) is housed.

第２の変形例においても本実施形態と同様の効果を得ることができる。 The same effect as that of the present embodiment can be obtained in the second modification.

［第５の実施形態］
図１３は、本発明の一態様に係るプラズマＣＶＤ装置を示す断面図である。図１４は、図１３に示す１０４－１０４線に沿った断面図であるが、ガスシャワー電極は図示していない。 [Fifth Embodiment]
FIG. 13 is a cross-sectional view showing a plasma CVD apparatus according to an aspect of the present invention. FIG. 14 is a cross-sectional view taken along the line 104-104 shown in FIG. 13, but the gas shower electrode is not shown.

図１３及び図１４において図９及び図１０と同一部分には同一符号を付し、異なる部分についてのみ説明する。 In FIGS. 13 and 14, the same parts as those in FIGS. 9 and 10 are designated by the same reference numerals, and only different parts will be described.

図１４に示すように、第４の収容部３１ｄには第４の打刻用部材が収容されてなく、第７の収容部５５１ａには第７の打刻用部材が収容されていない。つまり、図１０に示す第１～第１２の収容部３１ａ～３１ｆ，５５１ａ，５５１ｄの全てに打刻用部材が収容されているのに対し、図１４に示す第１～第１２の収容部３１ａ～３１ｆ，５５１ａ，５５１ｄの一部には打刻用部材が収容されていない。 As shown in FIG. 14, the fourth accommodating portion 31d does not accommodate the fourth engraving member, and the seventh accommodating portion 551a does not accommodate the seventh engraving member. That is, while the stamping member is accommodated in all of the first to twelfth accommodating portions 31a to 31f, 551a, and 551d shown in FIG. 10, the first to twelfth accommodating portions 31a shown in FIG. 14 are accommodated. No stamping member is housed in a part of ~ 31f, 551a, 551d.

本実施形態においても第４の実施形態と同様の効果を得ることができる。 Also in this embodiment, the same effect as that of the fourth embodiment can be obtained.

＜第１の変形例＞
図１５は、図１４に示す装置の第１の変形例を示す断面図であり、図１１と同一部分には同一符号を付し、異なる部分についてのみ説明する。 <First modification>
FIG. 15 is a cross-sectional view showing a first modification of the apparatus shown in FIG. 14, wherein the same parts as those in FIG. 11 are designated by the same reference numerals, and only different parts will be described.

図１５に示すように、第４の収容部３１ｄには第４の打刻用部材が収容されてなく、第７の収容部５７１ａには第７の打刻用部材が収容されていなく、第１６の収容部５８１ｄには第１６の打刻用部材が収容されていない。つまり、図１１に示す第１～第１８の収容部３１ａ，３１ｄ，５７１ａ，５７１ｄ，５８１ａ，５８１ｄの全てに打刻用部材が収容されているのに対し、図１５に示す第１～第１８の収容部３１ａ，３１ｄ，５７１ａ，５７１ｄ，５８１ａ，５８１ｄの一部には打刻用部材が収容されていない。 As shown in FIG. 15, the fourth accommodating portion 31d does not accommodate the fourth engraving member, and the seventh accommodating portion 571a does not accommodate the seventh engraving member. The 16th engraving member is not accommodated in the accommodating portion 581d of 16. That is, while the stamping members are housed in all of the first to 18th accommodating portions 31a, 31d, 571a, 571d, 581a, and 581d shown in FIG. 11, the first to 18th accommodating portions shown in FIG. 15 are accommodated. The stamping member is not accommodated in a part of the accommodating portions 31a, 31d, 571a, 571d, 581a, and 581d.

＜第２の変形例＞
図１６は、図１４に示す装置の第２の変形例を示す断面図であり、図１２と同一部分には同一符号を付し、異なる部分についてのみ説明する。 <Second modification>
FIG. 16 is a cross-sectional view showing a second modification of the apparatus shown in FIG. 14, wherein the same parts as those in FIG. 12 are designated by the same reference numerals, and only different parts will be described.

図１６に示すように、第４の収容部３１ｄには第４の打刻用部材が収容されてなく、第７の収容部６２１ａには第７の打刻用部材が収容されていなく、第１６の収容部６３１ｄには第１６の打刻用部材が収容されていなく、第１９の収容部６４１ｄには第１９の打刻用部材が収容されていない。つまり、図１２に示す第１～第２４の収容部３１ａ，３１ｄ，６２１ａ，６２１ｄ，６３１ａ，６３１ｄ，６４１ａ，６４１ｄの全てに打刻用部材が収容されているのに対し、図１６に示す第１～第２４の収容部３１ａ，３１ｄ，６２１ａ，６２１ｄ，６３１ａ，６３１ｄ，６４１ａ，６４１ｄの一部には打刻用部材が収容されていない。 As shown in FIG. 16, the fourth accommodating portion 31d does not accommodate the fourth engraving member, and the seventh accommodating portion 621a does not accommodate the seventh engraving member. The 16th accommodating portion 631d does not accommodate the 16th engraving member, and the 19th accommodating portion 641d does not accommodate the 19th engraving member. That is, while the stamping members are housed in all of the first to 24th accommodating portions 31a, 31d, 621a, 621d, 631a, 631d, 641a, 641d shown in FIG. 12, the second accommodating portion shown in FIG. The stamping member is not accommodated in a part of the first to 24th accommodating portions 31a, 31d, 621a, 621d, 631a, 631d, 641a, 641d.

［第６の実施形態］
図１７（Ａ）～（Ｄ）は、本発明の一態様に係るプラズマＣＶＤ装置を示す断面図であり、図１及び図２（Ａ）と同一部分には同一符号を付し、異なる部分についてのみ説明する。 [Sixth Embodiment]
17 (A) to 17 (D) are cross-sectional views showing a plasma CVD apparatus according to one aspect of the present invention, in which the same parts as those in FIGS. 1 and 2 (A) are designated by the same reference numerals, and different parts are designated. Only explain.

図２（Ａ）に示す第２容器部材２９ａの断面形状は多角形であるのに対し、図１７（Ａ）～（Ｄ）に示す第２容器部材１２９ａの断面形状は円形である。このため、第１容器部材２９と第２容器部材１２９ａとの間を仕切り部材によって６つの領域に仕切ることで、第２容器部材１２９ａの外面に第１～第６の収容部７１１ａ，７１１ｂ，７１１ｃ，７１１ｄ，７１１ｅ，７１１ｆを形成している。第１～第６の収容部７１１ａ～７１１ｆそれぞれには第１～第６の打刻用部材１１～１６が収容されている。 The cross-sectional shape of the second container member 29a shown in FIG. 2A is polygonal, whereas the cross-sectional shape of the second container member 129a shown in FIGS. 17A to 17D is circular. Therefore, by partitioning the space between the first container member 29 and the second container member 129a into six regions by a partition member, the first to sixth accommodating portions 711a, 711b, 711c are placed on the outer surface of the second container member 129a. , 711d, 711e, 711f. The first to sixth stamping members 11 to 16 are accommodated in each of the first to sixth accommodating portions 711a to 711f.

第１容器部材２９には回転機構（図示せず）が設けられており、この回転機構によりガスシャワー電極２１を回転中心として第１容器部材２９及び第２容器部材１２９ａを振り子動作又は回転動作させることで第２容器部材１２９ａ内の粉体（微粒子）１を攪拌あるいは回転させながら被覆処理を行うものである。振り子動作させる場合は、図１７（Ａ），（Ｂ），（Ｃ），（Ｄ）に示すようなものとなり、回転動作をさせる場合は、図１８（Ａ），（Ｂ）に示すようなものとなる。前記回転機構により第１容器部材２９及び第２容器部材１２９ａを回転させる際の回転軸は、略水平方向（重力方向に対して垂直方向）に平行な軸である。また、チャンバー１３内の気密性は、第１容器部材２９の回転時においても保持されている。 The first container member 29 is provided with a rotation mechanism (not shown), and the rotation mechanism causes the first container member 29 and the second container member 129a to perform a pendulum operation or a rotation operation with the gas shower electrode 21 as the center of rotation. Therefore, the coating treatment is performed while stirring or rotating the powder (fine particles) 1 in the second container member 129a. When the pendulum operation is performed, it is as shown in FIGS. 17 (A), (B), (C), and (D), and when the rotation operation is performed, it is as shown in FIGS. 18 (A) and 18 (B). It will be a thing. The rotation axis when rotating the first container member 29 and the second container member 129a by the rotation mechanism is an axis parallel to a substantially horizontal direction (direction perpendicular to the gravity direction). Further, the airtightness in the chamber 13 is maintained even when the first container member 29 is rotated.

図１７（Ａ）～（Ｄ）及び図１８（Ａ），（Ｂ）に示すように、第１容器部材２９及び第２容器部材１２９ａを振り子動作又は回転動作させることにより、第１～第６の収容部７１１ａ～７１１ｆそれぞれの内部を第１～第６の打刻用部材１１～１６が移動して第２容器部材１２９ａ及び第１容器部材２９に衝突する。これにより、第２容器部材１２９ａを振動させることができ、その振動を粉体１に与えることができる。 As shown in FIGS. 17 (A) to 17 (D) and FIGS. 18 (A) and 18 (B), the first to sixth containers members 29 and the second container member 129a are pendulum-operated or rotated. The first to sixth stamping members 11 to 16 move inside each of the accommodating portions 711a to 711f and collide with the second container member 129a and the first container member 29. As a result, the second container member 129a can be vibrated, and the vibration can be applied to the powder 1.

図１７（Ａ）～（Ｄ）及び図１８（Ａ），（Ｂ）は、ガスシャワー電極２１のガス吹き出し口を下方（重力方向）に向けて、第１容器部材２９及び第２容器部材１２９ａを振り子動作又は回転動作させているが、これに限らず、図１９（Ａ），（Ｂ）に示すように、ガス吹き出し口が下方より傾けた向きに位置するようにガスシャワー電極２１を配置して第１容器部材２９及び第２容器部材１２９ａを振り子動作又は回転動作させることも可能である。これにより、粉体１に原料ガスをよりバランス良く供給することが可能となる。 17 (A) to 17 (D) and FIGS. 18 (A) and 18 (B) show the first container member 29 and the second container member 129a with the gas outlet of the gas shower electrode 21 facing downward (in the direction of gravity). Is operated by a pendulum or a rotation, but the gas shower electrode 21 is arranged so that the gas outlet is located in a direction inclined from below as shown in FIGS. 19A and 19B. Then, the first container member 29 and the second container member 129a can be pendulum-operated or rotated. This makes it possible to supply the raw material gas to the powder 1 in a more balanced manner.

本実施形態においても第１の実施形態と同様の効果を得ることができる。 Also in this embodiment, the same effect as that of the first embodiment can be obtained.

なお、本実施形態では、第２容器部材１２９ａの外面に６つの収容部を形成しているが、これに限定されるものではなく、収容部の数は２～４つでも良いし、それ以外の数でも良い。 In the present embodiment, six accommodating portions are formed on the outer surface of the second container member 129a, but the present invention is not limited to this, and the number of accommodating portions may be two to four, and other than that. It may be the number of.

［第７の実施形態］
図２０は、本発明の一態様に係るプラズマＣＶＤ装置を示す断面図であり、図１と同一部分には同一符号を付し、異なる部分についてのみ説明する。 [7th Embodiment]
FIG. 20 is a cross-sectional view showing a plasma CVD apparatus according to one aspect of the present invention, in which the same parts as those in FIG. 1 are designated by the same reference numerals, and only different parts will be described.

図２０に示すように、第１容器部材２９の外側で且つチャンバー１３内には円筒形状の磁石２０１が配置されており、この磁石２０１は一方がＮ極で他方がＳ極である。磁石２０１は、ＣＶＤ膜を成膜する際に第２容器部材２９ａの内部にプラズマを集める機能を有する。 As shown in FIG. 20, a cylindrical magnet 201 is arranged outside the first container member 29 and inside the chamber 13, and the magnet 201 has an N pole on one side and an S pole on the other side. The magnet 201 has a function of collecting plasma inside the second container member 29a when forming a CVD film.

本実施形態においても第１の実施形態と同様の効果を得ることができる。
また、磁石２０１によってプラズマを第２容器部材２９ａの内部に集めることで、プラズマ密度を高めることができる。 Also in this embodiment, the same effect as that of the first embodiment can be obtained.
Further, the plasma density can be increased by collecting the plasma inside the second container member 29a by the magnet 201.

なお、本実施形態では、チャンバー１３の内側に磁石２０１を配置しているが、図２１及び図２５に示すように変更して実施することも可能である。
図２１に示すように、第１容器部材２９の外側で且つチャンバー１３の外側に磁石２０１を配置することも可能である。
また、図２５に示すように、第１容器部材２９の外側で且つチャンバー１３内には第１及び第２の磁石２０２，２０３が配置されている。第１及び第２の磁石２０２，２０３それぞれは、円筒形状を有し、一方がＮ極で他方がＳ極である。 In this embodiment, the magnet 201 is arranged inside the chamber 13, but it can be changed as shown in FIGS. 21 and 25.
As shown in FIG. 21, it is also possible to arrange the magnet 201 on the outside of the first container member 29 and on the outside of the chamber 13.
Further, as shown in FIG. 25, the first and second magnets 202 and 203 are arranged outside the first container member 29 and inside the chamber 13. Each of the first and second magnets 202 and 203 has a cylindrical shape, one having an N pole and the other having an S pole.

［第８の実施形態］
図２２及び図２３は、本発明の一態様に係るプラズマＣＶＤ装置を示す断面図であり、図１と同一部分には同一符号を付し、異なる部分についてのみ説明する。 [Eighth Embodiment]
22 and 23 are cross-sectional views showing a plasma CVD apparatus according to one aspect of the present invention, the same parts as those in FIG. 1 are designated by the same reference numerals, and only different parts will be described.

図２２に示すように、第２容器部材２９ａの一方側（第１のリング状部材２９ｂの側）は第１容器部材２９で塞がれている。第２容器部材２９ａの他方側（第２のリング状部材２９ｃの側）に配置され、第２容器部材２９ａの内部に発生するプラズマ２１２を閉じ込める機能を有する蓋部３０２がチャンバー１３内に配置されている。この蓋部３０２には移動機構３０１が接続されており、この移動機構３０１によって蓋部３０２を、第２容器部材２９ａの断面の垂直方向で且つ第２容器部材２９ａから離れる方向に移動させることが可能である（図２３参照）。 As shown in FIG. 22, one side of the second container member 29a (the side of the first ring-shaped member 29b) is closed by the first container member 29. A lid 302 arranged on the other side of the second container member 29a (the side of the second ring-shaped member 29c) and having a function of confining the plasma 212 generated inside the second container member 29a is arranged in the chamber 13. ing. A moving mechanism 301 is connected to the lid portion 302, and the moving mechanism 301 can move the lid portion 302 in the direction perpendicular to the cross section of the second container member 29a and in the direction away from the second container member 29a. It is possible (see FIG. 23).

図２３に示すように、蓋部３０２を第２容器部材２９ａから離れた位置に移動させておくと、第２容器部材２９ａの内部に発生するプラズマ２１１を第２容器部材２９ａの他方側に拡げることができる。 As shown in FIG. 23, when the lid portion 302 is moved to a position away from the second container member 29a, the plasma 211 generated inside the second container member 29a is expanded to the other side of the second container member 29a. be able to.

図２２に示すように、第２容器部材２９ａの内部にプラズマ２１２を閉じ込めた状態は、微粒子に膜を被覆する処理に好ましい。これに対し、図２３に示すように、第２容器部材２９ａの内部に発生するプラズマ２１１を拡げた状態は、第２容器部材２９ａの表面にＣＶＤ膜が成膜された場合に、そのＣＶＤ膜を除去するためのプラズマクリーニング処理に好ましい。 As shown in FIG. 22, the state in which the plasma 212 is confined inside the second container member 29a is preferable for the treatment of coating the fine particles with the film. On the other hand, as shown in FIG. 23, the state in which the plasma 211 generated inside the second container member 29a is expanded is a state in which the CVD film is formed on the surface of the second container member 29a. It is preferable for the plasma cleaning process for removing.

次に、上記プラズマＣＶＤ装置を用いて粉体（微粒子）に超微粒子又は薄膜を被覆するプラズマＣＶＤ方法について説明する。ここでは、コーティング対象の微粒子１としてＣｕ微粒子を用い、そのＣｕ微粒子にＳｉＯ_２を被覆するものを例にとり説明する。 Next, a plasma CVD method of coating powder (fine particles) with ultrafine particles or a thin film using the plasma CVD apparatus will be described. Here, a case where Cu fine particles are used as the fine particles 1 to be coated and the Cu fine particles are coated with SiO ₂ will be described as an example.

まず、複数の微粒子からなる粉体（Ｃｕ）１を第２容器部材２９ａ内に収容する。そして、蓋部３０２は図２２に示す位置にしておく。これは、第２容器部材２９ａの内部にプラズマ２１２を閉じ込めるためである。 First, the powder (Cu) 1 composed of a plurality of fine particles is housed in the second container member 29a. Then, the lid portion 302 is set at the position shown in FIG. 22. This is to confine the plasma 212 inside the second container member 29a.

この後、真空ポンプを作動させることによりチャンバー１３内を所定の圧力まで減圧する。これと共に、回転機構により第１容器部材２９及び第２容器部材２９ａを回転させることで、第２容器部材２９ａの内部に収容された粉末（微粒子）１が容器内面において攪拌又は回転される。なお、ここでは、第１容器部材２９及び第２容器部材２９ａを回転させているが、第１容器部材２９及び第２容器部材２９ａを回転機構によって振り子動作させることも可能である。 After that, the inside of the chamber 13 is depressurized to a predetermined pressure by operating the vacuum pump. At the same time, by rotating the first container member 29 and the second container member 29a by the rotation mechanism, the powder (fine particles) 1 contained in the second container member 29a is stirred or rotated on the inner surface of the container. Although the first container member 29 and the second container member 29a are rotated here, the first container member 29 and the second container member 29a can be pendulum-operated by the rotation mechanism.

次いで、原料ガス発生源２０において原料ガスを発生させ、マスフローコントローラによって原料ガスの流量を制御し、この原料ガスをガスシャワー電極２１の内側に導入する。そして、ガスシャワー電極２１のガス吹き出し口から原料ガスを吹き出させる。これにより、第２容器部材２９ａ内を攪拌又は回転しながら動いている微粒子１に原料ガスが吹き付けられ、制御されたガス流量と排気能力のバランスによって、ＣＶＤ法による成膜に適した圧力に保たれる。 Next, the raw material gas is generated in the raw material gas generation source 20, the flow rate of the raw material gas is controlled by the mass flow controller, and the raw material gas is introduced inside the gas shower electrode 21. Then, the raw material gas is blown out from the gas outlet of the gas shower electrode 21. As a result, the raw material gas is blown onto the fine particles 1 moving while stirring or rotating in the second container member 29a, and the pressure suitable for film formation by the CVD method is maintained by the controlled balance between the gas flow rate and the exhaust capacity. Dripping.

この後、第１容器部材２９にプラズマ電源２３の一例である高周波電源（ＲＦ電源）からＲＦ出力が供給される。これにより、第１容器部材２９及び第１、第２のリング状部材２９ｂ，２９ｃを通して第２容器部材２９ａと粉体１にＲＦ出力が供給される。この際、ガスシャワー電極２１は接地電位に接続されている。これにより、ガスシャワー電極２１と第２容器部材２９ａとの間にプラズマが着火され、第２容器部材２９ａ内にプラズマが発生され、絶縁物からなる超微粒子又は薄膜がＣｕの微粒子１の表面に被覆される。 After that, the RF output is supplied to the first container member 29 from the high frequency power supply (RF power supply) which is an example of the plasma power supply 23. As a result, RF output is supplied to the second container member 29a and the powder 1 through the first container member 29 and the first and second ring-shaped members 29b and 29c. At this time, the gas shower electrode 21 is connected to the ground potential. As a result, plasma is ignited between the gas shower electrode 21 and the second container member 29a, plasma is generated in the second container member 29a, and ultrafine particles or a thin film made of an insulator are formed on the surface of the Cu fine particles 1. Be covered.

次に、第２容器部材２９ａ内の微粒子１をチャンバー１３の外に取り出す。
この後、上述したＣｕの微粒子１に絶縁物からなる超微粒子又は薄膜を被覆する工程を繰り返す。これにより、第２容器部材２９ａの表面全体又は表面の大部分が絶縁膜で覆われる。このように絶縁膜で覆われると、第２容器部材２９ａとガスシャワー電極２１の電位差が変化するため、微粒子１への成膜環境が変化する。その結果、微粒子１に被覆される薄膜の組成や膜質が変化する。そこで、微粒子１への成膜環境を元に戻すために、第２容器部材２９ａの表面に付着した絶縁膜を除去する工程を行う。以下に詳細に説明する。 Next, the fine particles 1 in the second container member 29a are taken out of the chamber 13.
After that, the step of coating the above-mentioned Cu fine particles 1 with ultrafine particles or a thin film made of an insulating material is repeated. As a result, the entire surface of the second container member 29a or most of the surface is covered with the insulating film. When covered with the insulating film in this way, the potential difference between the second container member 29a and the gas shower electrode 21 changes, so that the film forming environment on the fine particles 1 changes. As a result, the composition and film quality of the thin film coated on the fine particles 1 change. Therefore, in order to restore the film forming environment on the fine particles 1, a step of removing the insulating film adhering to the surface of the second container member 29a is performed. This will be described in detail below.

移動機構３０１によって蓋部３０２を、第２容器部材２９ａの断面の垂直方向で且つ第２容器部材２９ａから離れる方向に移動させ、蓋部３０２を図２３に示す位置にする。これは、プラズマ２１１を第２容器部材２９ａの外側まで拡げるためである。 The moving mechanism 301 moves the lid portion 302 in the direction perpendicular to the cross section of the second container member 29a and in the direction away from the second container member 29a, and positions the lid portion 302 at the position shown in FIG. 23. This is to spread the plasma 211 to the outside of the second container member 29a.

この後、真空ポンプを作動させることによりチャンバー１３内を所定の圧力まで減圧する。これと共に、回転機構により第１容器部材２９及び第２容器部材２９ａを回転させる。なお、ここでは、第１容器部材２９及び第２容器部材２９ａを回転させているが、第１容器部材２９及び第２容器部材２９ａを回転機構によって振り子動作させることも可能である。 After that, the inside of the chamber 13 is depressurized to a predetermined pressure by operating the vacuum pump. At the same time, the first container member 29 and the second container member 29a are rotated by the rotation mechanism. Although the first container member 29 and the second container member 29a are rotated here, the first container member 29 and the second container member 29a can be pendulum-operated by the rotation mechanism.

第１容器部材２９及び第２容器部材２９ａを回転又は振り子動作させることにより、第１～第６の収容部３１ａ～３１ｆ内を第１～第６の打刻用部材１１～１６が移動して第２容器部材２９ａに衝突することで、第２容器部材２９ａに振動を与えることができる。 By rotating or penduluming the first container member 29 and the second container member 29a, the first to sixth stamping members 11 to 16 move within the first to sixth accommodating portions 31a to 31f. By colliding with the second container member 29a, vibration can be applied to the second container member 29a.

次いで、プラズマクリーニングガスをガスシャワー電極２１の内側に導入し、ガスシャワー電極２１のガス吹き出し口からプラズマクリーニングガスを吹き出させる。 Next, the plasma cleaning gas is introduced inside the gas shower electrode 21, and the plasma cleaning gas is blown out from the gas outlet of the gas shower electrode 21.

この後、第１容器部材２９にプラズマ電源２３の一例である高周波電源（ＲＦ電源）からＲＦ出力が供給される。これにより、第１容器部材２９及び第１、第２のリング状部材２９ｂ，２９ｃを通して第２容器部材２９ａにＲＦ出力が供給される。この際、ガスシャワー電極２１は接地電位に接続されている。これにより、ガスシャワー電極２１と第２容器部材２９ａとの間にプラズマが着火され、第２容器部材２９ａ内にプラズマが発生され、第２容器部材２９ａの表面に付着した絶縁物の膜をプラズマクリーニングする。例えば、Ｏ_２とＣＦ_４の混合ガスにより１時間のプラズマクリーニングを行い、その後に、残留しているフッ素を除去するために、Ａｒガスにより１０分間のプラズマクリーニングを行うとよい。 After that, the RF output is supplied to the first container member 29 from the high frequency power supply (RF power supply) which is an example of the plasma power supply 23. As a result, RF output is supplied to the second container member 29a through the first container member 29 and the first and second ring-shaped members 29b and 29c. At this time, the gas shower electrode 21 is connected to the ground potential. As a result, plasma is ignited between the gas shower electrode 21 and the second container member 29a, plasma is generated in the second container member 29a, and the film of the insulator adhering to the surface of the second container member 29a is plasma. Clean. For example, plasma cleaning may be performed for 1 hour with a mixed gas of O ₂ and CF ₄ , and then plasma cleaning for 10 minutes with Ar gas in order to remove residual fluorine.

このようにして第２容器部材２９ａの表面に付着した絶縁膜を除去することで、微粒子１への成膜環境を元に戻すことができる。 By removing the insulating film adhering to the surface of the second container member 29a in this way, the film forming environment on the fine particles 1 can be restored.

次いで、上記プラズマＣＶＤ装置を用いて粉体（微粒子）に超微粒子又は薄膜を被覆する工程を行う。 Next, a step of coating the powder (fine particles) with ultrafine particles or a thin film is performed using the plasma CVD apparatus.

なお、本実施形態では、図２３に示すプラズマＣＶＤ装置においてプラズマクリーニングを行うことを説明しているが、第１～第７の実施形態のいずれのプラズマＣＶＤ装置においてもプラズマクリーニングを行うことが可能である。 Although the present embodiment describes that the plasma CVD apparatus shown in FIG. 23 performs plasma cleaning, it is possible to perform plasma cleaning in any of the plasma CVD apparatus according to the first to seventh embodiments. Is.

図２４は、第２容器部材２９ａの表面全体又は表面の大部分が絶縁膜で覆われると、微粒子１への成膜環境が変化し、その微粒子１に被覆される薄膜の組成や膜質が変化することを確認する実験を行った結果である。ここでの絶縁膜はＳｉＯ_２膜であり、微粒子はＣｕ微粒子である。 In FIG. 24, when the entire surface or most of the surface of the second container member 29a is covered with the insulating film, the film forming environment on the fine particles 1 changes, and the composition and film quality of the thin film coated on the fine particles 1 change. This is the result of an experiment to confirm that the particles are to be used. The insulating film here is a SiO ₂ film, and the fine particles are Cu fine particles.

上記のプラズマＣＶＤ装置でＣｕ微粒子にＳｉＯ_２膜を成膜する処理を行い、Ｃｕ微粒子に成膜されたＳｉＯ_２膜の組成を測定する実験を行った。成膜の処理時間を２０分としたＣｕ微粒子にはＳｉＯ_２のみ確認されたのに対し、成膜の処理時間を４０分としたＣｕ微粒子及び成膜処理時間を５０分としたＣｕ微粒子にはＳｉＯ_２の組成にＳｉＯ_３ ^２－の組成が混入していることが確認された。 An experiment was conducted in which the above plasma CVD apparatus was used to form a SiO _{2 film on Cu fine particles, and the composition of the SiO 2} _film formed on the Cu fine particles was measured. Only SiO ₂ was confirmed in the Cu fine particles having a film forming treatment time of 20 minutes, whereas in the Cu fine particles having a film forming processing time of 40 minutes and the Cu fine particles having a film forming processing time of 50 minutes, only SiO 2 was confirmed. It was confirmed that the composition of SiO _32-2 was mixed with the composition of ^{SiO 2} _.

図２４の実験結果により、第２容器部材２９ａの表面に付着した絶縁膜を除去するプラズマクリーニングを行い、微粒子１への成膜環境を元に戻すことが有効であることが分かる。 From the experimental results of FIG. 24, it can be seen that it is effective to perform plasma cleaning to remove the insulating film adhering to the surface of the second container member 29a and restore the film forming environment on the fine particles 1.

［第９の実施形態］
図２６（Ａ）は本発明の一態様に係るプラズマＣＶＤ装置を示す断面図であり、図２６（Ｂ）は図２６（Ａ）に示す第２容器部材２２９ａを１０５－１０５線で切断した一部断面図である。図２６（Ｃ）は図２６（Ａ）に示す第２容器部材２２９ａを１８０°回転させた状態の断面図であり、図２６（Ｄ）は図２６（Ｃ）に示す第２容器部材２２９ａを１０６－１０６線で切断した一部断面図である。図２６（Ｅ）は、図２６（Ｂ）に示す第２容器部材２２９ａの展開図である。図２６（Ａ）～（Ｅ）において第１の実施形態の図と同一部分には同一符号を付す。また、本実施形態に係るプラズマＣＶＤ装置は、図２６（Ａ）～（Ｅ）に示す以外の部分が第１の実施形態と同様であるので、本実施形態では第１の実施形態と異なる部分についてのみ説明する。 [9th embodiment]
26 (A) is a cross-sectional view showing a plasma CVD apparatus according to one aspect of the present invention, and FIG. 26 (B) is a second container member 229a shown in FIG. 26 (A) cut along a line 105-105. It is a partial sectional view. 26 (C) is a cross-sectional view of the second container member 229a shown in FIG. 26 (A) rotated by 180 °, and FIG. 26 (D) shows the second container member 229a shown in FIG. 26 (C). It is a partial cross-sectional view cut by line 106-106. 26 (E) is a developed view of the second container member 229a shown in FIG. 26 (B). In FIGS. 26A to 26E, the same parts as those in the first embodiment are designated by the same reference numerals. Further, the plasma CVD apparatus according to the present embodiment is the same as the first embodiment except for the portions shown in FIGS. 26 (A) to 26 (E), and therefore, the portion different from the first embodiment in the present embodiment. Will be explained only.

第１容器部材２９の内部には第２容器部材２２９ａが配置されており、第２容器部材２２９ａは、図２６（Ａ），（Ｃ）に示すようにその断面が六角形のバレル形状を有しているが、図２（Ａ）に示す第２容器部材２９ａと形状が異なるので、以下に詳細に説明する。なお、本実施形態では、六角形のバレル形状を用いているが、六角形以外の多角形のバレル形状を用いてもよい。 A second container member 229a is arranged inside the first container member 29, and the second container member 229a has a barrel shape having a hexagonal cross section as shown in FIGS. 26 (A) and 26 (C). However, since the shape is different from that of the second container member 29a shown in FIG. 2A, the details will be described below. In this embodiment, a hexagonal barrel shape is used, but a polygonal barrel shape other than the hexagonal shape may be used.

第２容器部材２２９は、六角形の第１の辺の長さ１００３（図２６（Ａ）参照）が第２容器部材２２９の一方側から他方側にいくにつれて短くなっており（図２６（Ｅ）参照）、且つ多角形の第１の辺と隣接する第２の辺の長さ１００４（図２６（Ａ）参照）が第２容器部材２２９の一方側から他方側にいくにつれて長くなっている（図２６（Ｅ）参照）。つまり、図２６（Ｅ）に示すように、第２容器部材２２９は、一方側の第１の辺の長さ１００３が他方側の第１の辺の長さ１００４より長く、且つ第１の辺と隣接する第２の辺の一方側の長さ１００４が他方側の第２の辺の長さ１００３より短くなっている。そして、六角形の隣接する辺の長さは互いに長短が交互に配置されている。 The second container member 229 has a hexagonal first side length 1003 (see FIG. 26 (A)) that becomes shorter from one side to the other side of the second container member 229 (FIG. 26 (E). ), And the length 1004 of the second side adjacent to the first side of the polygon (see FIG. 26 (A)) becomes longer from one side to the other side of the second container member 229. (See FIG. 26 (E)). That is, as shown in FIG. 26 (E), in the second container member 229, the length 1003 of the first side on one side is longer than the length 1004 of the first side on the other side, and the first side The length 1004 on one side of the second side adjacent to is shorter than the length 1003 on the second side on the other side. The lengths of the adjacent sides of the hexagon are alternately arranged in long and short.

従って、図２６（Ｂ）に示す状態では、第２容器部材２２９ａの底面が左側に傾いているが、図２６（Ｂ）に示す状態から１８０°回転させた図２６（Ｄ）に示す状態では、第２容器部材２２９ａの底面は右側に傾く。つまり、図２６（Ａ）～（Ｅ）に示すプラズマＣＶＤ装置では、第２容器部材が６０°回転する毎に、図２６（Ｂ）に示す状態と図２６（Ｄ）に示す状態が交互に繰り返されることになる。これにより、軸方向（図２６（Ａ）の断面に垂直方向）の粉体１の分布の均一化を図ることができる。その結果、粉体１が凝集するのを防ぎ、粉体１の攪拌及び混合を十分に促進することができる。 Therefore, in the state shown in FIG. 26 (B), the bottom surface of the second container member 229a is tilted to the left side, but in the state shown in FIG. 26 (D) rotated by 180 ° from the state shown in FIG. 26 (B). , The bottom surface of the second container member 229a is tilted to the right. That is, in the plasma CVD apparatus shown in FIGS. 26A to 26E, the state shown in FIG. 26B and the state shown in FIG. 26D alternate each time the second container member rotates by 60 °. It will be repeated. As a result, the distribution of the powder 1 in the axial direction (direction perpendicular to the cross section of FIG. 26A) can be made uniform. As a result, it is possible to prevent the powder 1 from aggregating and sufficiently promote the stirring and mixing of the powder 1.

なお、図２６（Ｂ），（Ｄ）に示す一点破線１００１は水平線を示し、図２６（Ｂ），（Ｄ），（Ｅ）に示す実線１００２は六角形の一辺の一端を示している。 The alternate long and short dash line 1001 shown in FIGS. 26 (B) and 26 (D) indicates a horizontal line, and the solid line 1002 shown in FIGS. 26 (B), (D) and (E) indicates one end of a hexagon.

図２６（Ａ），（Ｃ）に示すように、第１の収容部２３１ａには第１の打刻用部材１０１１が収容されており、第２の収容部２３１ｂには第２の打刻用部材が収容されている。第３の収容部２３１ｃには第３の打刻用部材が収容されており、第４の収容部２３１ｄには第４の打刻用部材１０１４が収容されている。第５の収容部２３１ｅには第５の打刻用部材が収容されており、第６の収容部２３１ｆには第６の打刻用部材が収容されている。
第２容器部材２９ａには、第１～第６の収容部３１ａ～３１ｆそれぞれの内部に位置する凸部３３ａが設けられている。 As shown in FIGS. 26A and 26C, the first accommodating portion 231a accommodates the first engraving member 1011 and the second accommodating portion 231b accommodates the second engraving member. Members are housed. A third stamping member is housed in the third storage section 231c, and a fourth stamping member 1014 is housed in the fourth storage section 231d. The fifth accommodating portion 231e accommodates the fifth engraving member, and the sixth accommodating portion 231f accommodates the sixth engraving member.
The second container member 29a is provided with convex portions 33a located inside each of the first to sixth accommodating portions 31a to 31f.

なお、上記の第１の実施形態から第９の実施形態を適宜組み合わせて実施することも可能である。 It is also possible to appropriately combine the first to ninth embodiments described above.

Claims

With the chamber
A container arranged in the chamber and containing fine particles or electronic parts and having a polygonal or circular cross-sectional shape inside.
A first accommodating portion formed on the outer surface of the container and accommodating the first engraving member, and a first accommodating portion.
A rotation mechanism that rotates or pendulums the container,
A counter electrode arranged in the container and facing the inner surface of the container, and a counter electrode.
With a plasma power supply electrically connected to the container,
A gas introduction mechanism that introduces raw material gas into the container,
An exhaust mechanism that evacuates the inside of the chamber and
Equipped with
By rotating or pendulum the container using the rotation mechanism, the first stamping member moves in the first accommodating portion and collides with the container, thereby giving vibration to the container. In addition, by using the plasma CVD method while stirring or rotating the fine particles or electronic parts in the container, the surface of the fine particles or electronic parts is coated with ultrafine particles or thin films having a diameter smaller than that of the fine particles or electronic parts. A plasma CVD apparatus characterized in that.

With the chamber
A container arranged in the chamber and containing fine particles or electronic parts and having a polygonal cross-sectional shape inside.
A rotation mechanism that rotates or pendulums the container,
A counter electrode arranged in the container and facing the inner surface of the container, and a counter electrode.
With a plasma power supply electrically connected to the container,
A gas introduction mechanism that introduces raw material gas into the container,
An exhaust mechanism that evacuates the inside of the chamber and
Equipped with
In the container, the length of the first side of the polygon becomes shorter from one side to the other side of the container, and the length of the second side adjacent to the first side of the polygon becomes shorter. The length increases from one side of the container to the other side.
By rotating or pendulum the container using the rotation mechanism and using the plasma CVD method while stirring or rotating the fine particles or electronic parts in the container, the fine particles or the electronic parts are on the surface of the fine particles or the electronic parts. Alternatively, a plasma CVD apparatus characterized by coating ultrafine particles or a thin film having a diameter smaller than that of the electronic component.

In claim 2,
It has a first accommodating portion formed on the outer surface of the container and accommodating a first engraving member.
By rotating or penduluming the container using the rotation mechanism, the first stamping member moves in the first accommodating portion and collides with the container, thereby giving vibration to the container. A plasma CVD apparatus characterized in that.

In any one of claims 1 to 3,
A second accommodating portion formed on the outer surface of the container and accommodating the second engraving member,
A third accommodating portion formed on the outer surface of the container and accommodating a third engraving member, and a third accommodating portion.
Have,
By rotating or penduluming the container using the rotation mechanism, the second stamping member moves in the second accommodating portion, collides with the container, and moves inside the third accommodating portion. A plasma CVD apparatus characterized in that the third stamping member moves and collides with the container to give vibration to the container.

In any one of claims 1 or 3,
It has a second accommodating portion formed on the outer surface of the container, located next to the first accommodating portion, and located in the vertical direction of the cross section of the container, for accommodating the second engraving member. ,
By rotating or penduluming the container using the rotation mechanism, the second stamping member moves in the second accommodating portion and collides with the container, thereby giving vibration to the container. A plasma CVD apparatus characterized in that.

In any one of claims 1 to 5,
An earth shielding member that covers the upper surface and the side surface of the counter electrode and has a curved cross-sectional shape.
A vibration mechanism that applies vibration to the ground shielding member,
A plasma CVD apparatus characterized by having.

In any one of claims 1 , 3 and 5 .
The first stamping member is housed in the first accommodating portion so that the cross-sectional shape has a polygonal rod shape and the longitudinal direction of the rod shape is located in the vertical direction of the cross section of the container. A plasma CVD apparatus characterized by being

In any one of claims 1 , 3, 5 and 7.
A plasma CVD apparatus characterized in that the surface of the first stamping member is covered with a film made of a material different from the inside thereof.

In any one of claims 1 to 8,
A plasma CVD apparatus having a magnet arranged on the outside of the container, wherein the magnet has a function of collecting plasma inside the container.

In claim 9.
A plasma CVD apparatus characterized in that the magnet is arranged in the chamber.

In any one of claims 1 to 10,
A member that closes one side of the container and
A lid located on the other side of the container and having a function of confining plasma generated inside the container.
Have,
A plasma CVD apparatus comprising a moving mechanism for moving the lid portion in a direction perpendicular to the cross section of the container and in a direction away from the container.

In the chamber, place a container whose internal cross-sectional shape is polygonal or circular,
Fine particles or electronic parts are housed in the container.
A counter electrode facing the inner surface of the container is arranged in the container.
Vacuum exhaust the inside of the chamber
Rotate or pendulum the container to
Introduce the raw material gas into the container and
Plasma power is supplied to the container,
By rotating or pendulum the container, the first stamping member moves in the first accommodating portion formed on the outer surface of the container and collides with the container, thereby giving vibration to the container. In addition, the surface of the fine particles or the electronic parts is coated with ultrafine particles or a thin film having a diameter smaller than that of the fine particles or the electronic parts by a plasma CVD method while stirring or rotating the fine particles or the electronic parts in the container. A plasma CVD method characterized by.

In the chamber, place a container with a polygonal cross-sectional shape inside,
Fine particles or electronic parts are housed in the container.
A counter electrode facing the inner surface of the container is arranged in the container.
Vacuum exhaust the inside of the chamber
Rotate or pendulum the container to
Introduce the raw material gas into the container and
Plasma power is supplied to the container,
By rotating or pendulum the container, the fine particles or the electronic component in the container are stirred or rotated by the plasma CVD method, and the surface of the fine particles or the electronic component has a diameter larger than that of the fine particles or the electronic component. Covering small ultrafine particles or thin films,
In the container, the length of the first side of the polygon becomes shorter from one side to the other side of the container, and the length of the second side adjacent to the first side of the polygon becomes shorter. A plasma CVD method characterized in that the length increases from one side of the container to the other side.

In claim 13,
When the container is rotated or pendulum-operated, the first stamping member moves in the first accommodating portion formed on the outer surface of the container and collides with the container to give vibration to the container. A plasma CVD method characterized by.

In any one of claims 12 to 14,
The ultrafine particles or thin films are insulators and are
After the step (a) of coating the surface of the fine particles or the electronic component with ultrafine particles or a thin film having a diameter smaller than that of the fine particles or the electronic component, the fine particles or the electronic component are taken out from the container and placed on the surface of the container. Including the step (b) of removing the film of the adhered insulating material, the step (b) is included.
The step (b) is
Rotate or pendulum the container to
Cleaning gas is introduced into the container, and
Plasma power is supplied to the container,
A plasma CVD method comprising a step of plasma cleaning a film of an insulator adhering to the surface of the container by rotating or operating the container.

In a method of manufacturing fine particles or electronic components using a plasma CVD apparatus.
The plasma CVD apparatus is
With the chamber
A container arranged in the chamber and containing fine particles or electronic parts and having a polygonal or circular cross-sectional shape inside.
A first accommodating portion formed on the outer surface of the container and accommodating the first engraving member, and a first accommodating portion.
A rotation mechanism that rotates or pendulums the container,
A counter electrode arranged in the container and facing the inner surface of the container, and a counter electrode.
With a plasma power supply electrically connected to the container,
A gas introduction mechanism that introduces raw material gas into the container,
An exhaust mechanism that evacuates the inside of the chamber and
Equipped with
By rotating or pendulum-moving the container using the rotation mechanism, the first stamping member moves in the first accommodating portion and collides with the container, thereby giving vibration to the container. In addition, by using the plasma CVD method while stirring or rotating the fine particles or electronic components in the container, the surface of the fine particles or electronic components is coated with ultrafine particles or thin films having a diameter smaller than that of the fine particles or electronic components. A method for manufacturing fine particles or electronic components.

In a method of manufacturing fine particles or electronic components using a plasma CVD apparatus.
The plasma CVD apparatus is
With the chamber
A container arranged in the chamber and containing fine particles or electronic parts and having a polygonal cross-sectional shape inside.
A rotation mechanism that rotates or pendulums the container,
A counter electrode arranged in the container and facing the inner surface of the container, and a counter electrode.
With a plasma power supply electrically connected to the container,
A gas introduction mechanism that introduces raw material gas into the container,
An exhaust mechanism that evacuates the inside of the chamber and
Equipped with
In the container, the length of the first side of the polygon becomes shorter from one side to the other side of the container, and the length of the second side adjacent to the first side of the polygon becomes shorter. The length increases from one side of the container to the other side.
By using the plasma CVD method while stirring or rotating the fine particles or electronic components in the container by rotating or pendulum the container using the rotation mechanism, the fine particles or the electronic components are on the surface of the fine particles or the electronic components. Alternatively, a method for manufacturing fine particles or electronic parts, which comprises coating ultrafine particles or a thin film having a diameter smaller than that of the electronic parts.

In claim 17,
When the container is rotated or pendulum-operated, the first stamping member moves in the first accommodating portion formed on the outer surface of the container and collides with the container to give vibration to the container. A method for manufacturing fine particles or electronic parts.

In any one of claims 16 to 18,
The ultrafine particles or thin films are insulators and are
After the step (a) of coating the surface of the fine particles or the electronic component with ultrafine particles or a thin film having a diameter smaller than that of the fine particles or the electronic component, the fine particles or the electronic component are taken out from the container and placed on the surface of the container. Including the step (b) of removing the film of the adhered insulating material, the step (b) is included.
The plasma CVD apparatus is
A member that closes one side of the container and
A lid located on the other side of the container and having a function of confining plasma generated inside the container.
Have,
It has a moving mechanism for moving the lid portion in the direction perpendicular to the cross section of the container and in the direction away from the container.
The step (b) is
The lid is moved away from the container by the moving mechanism.
Rotate or pendulum the container to
Cleaning gas is introduced into the container, and
Plasma power is supplied to the container,
A method for producing fine particles or electronic components, which is a step of plasma cleaning a film of an insulator adhering to the surface of the container by rotating or operating the container.