[go: up one dir, main page]

JP6761025B2 - 研磨用組成物セット、前研磨用組成物、及びシリコンウェーハの研磨方法 - Google Patents

研磨用組成物セット、前研磨用組成物、及びシリコンウェーハの研磨方法 Download PDF

Info

Publication number
JP6761025B2
JP6761025B2 JP2018508509A JP2018508509A JP6761025B2 JP 6761025 B2 JP6761025 B2 JP 6761025B2 JP 2018508509 A JP2018508509 A JP 2018508509A JP 2018508509 A JP2018508509 A JP 2018508509A JP 6761025 B2 JP6761025 B2 JP 6761025B2
Authority
JP
Japan
Prior art keywords
polishing
silicon wafer
composition
polishing composition
test piece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018508509A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2017169154A1 (ja
Inventor
公亮 土屋
公亮 土屋
真希 浅田
真希 浅田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujimi Inc
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of JPWO2017169154A1 publication Critical patent/JPWO2017169154A1/ja
Application granted granted Critical
Publication of JP6761025B2 publication Critical patent/JP6761025B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2018508509A 2016-03-30 2017-02-08 研磨用組成物セット、前研磨用組成物、及びシリコンウェーハの研磨方法 Active JP6761025B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016067868 2016-03-30
JP2016067868 2016-03-30
PCT/JP2017/004630 WO2017169154A1 (ja) 2016-03-30 2017-02-08 研磨用組成物セット、前研磨用組成物、及びシリコンウェーハの研磨方法

Publications (2)

Publication Number Publication Date
JPWO2017169154A1 JPWO2017169154A1 (ja) 2019-02-07
JP6761025B2 true JP6761025B2 (ja) 2020-09-23

Family

ID=59963830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018508509A Active JP6761025B2 (ja) 2016-03-30 2017-02-08 研磨用組成物セット、前研磨用組成物、及びシリコンウェーハの研磨方法

Country Status (3)

Country Link
JP (1) JP6761025B2 (zh)
TW (1) TWI724117B (zh)
WO (1) WO2017169154A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7512035B2 (ja) * 2019-12-24 2024-07-08 ニッタ・デュポン株式会社 研磨用組成物
CN115244658A (zh) * 2020-03-13 2022-10-25 福吉米株式会社 研磨用组合物及研磨方法
JPWO2021182155A1 (zh) * 2020-03-13 2021-09-16

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6685757B2 (en) * 2002-02-21 2004-02-03 Rodel Holdings, Inc. Polishing composition
DE112011103185T5 (de) * 2010-09-24 2013-07-18 Fujimi Incorporated Polierzusammensetzung und Spülzusammensetzung
JP6259723B2 (ja) * 2014-06-18 2018-01-10 株式会社フジミインコーポレーテッド シリコンウェーハの研磨方法、研磨用組成物および研磨用組成物セット

Also Published As

Publication number Publication date
WO2017169154A1 (ja) 2017-10-05
TWI724117B (zh) 2021-04-11
TW201742138A (zh) 2017-12-01
JPWO2017169154A1 (ja) 2019-02-07

Similar Documents

Publication Publication Date Title
JP7148506B2 (ja) 研磨用組成物およびこれを用いた研磨方法
CN106663619B (zh) 硅晶圆研磨用组合物
KR102645587B1 (ko) 연마용 조성물 및 이것을 사용한 연마 방법
JP6801964B2 (ja) 研磨用組成物及びシリコン基板の研磨方法
KR102520942B1 (ko) 실리콘 웨이퍼의 연마 방법 및 표면 처리 조성물
JP6110681B2 (ja) 研磨用組成物、研磨用組成物製造方法および研磨物製造方法
JP7534283B2 (ja) 研磨用組成物
JPWO2019017407A1 (ja) 基板の研磨方法および研磨用組成物セット
JP6761025B2 (ja) 研磨用組成物セット、前研磨用組成物、及びシリコンウェーハの研磨方法
JP2019179890A (ja) シリコンウェーハの研磨方法および研磨用組成物
JP6377656B2 (ja) シリコン基板の研磨方法および研磨用組成物セット
JP6348927B2 (ja) シリコンウェーハ研磨用組成物
JP7330676B2 (ja) シリコンウェーハ研磨用組成物
JP2017183478A (ja) シリコンウェーハの研磨方法及び研磨用組成物セット
JP7588066B2 (ja) 研磨用組成物
JP7502267B2 (ja) ケイ素－ケイ素結合を有する材料を含む研磨対象物の研磨方法
JP2016207875A (ja) 研磨方法
WO2024071086A1 (ja) 研磨用組成物の製造方法および研磨用組成物
WO2024070831A1 (ja) 研磨用組成物
WO2022113986A1 (ja) シリコンウェーハ用研磨用組成物およびその利用
WO2023063027A1 (ja) 研磨用組成物
WO2022209758A1 (ja) 研磨方法、研磨用組成物セット
WO2024203749A1 (ja) 研磨用組成物
TW202219234A (zh) 研磨用組成物及其利用

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190822

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200526

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200720

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20200825

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20200903

R150 Certificate of patent or registration of utility model

Ref document number: 6761025

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250