[go: up one dir, main page]

JP6509139B2 - Substrate support apparatus and method of manufacturing the same - Google Patents

Substrate support apparatus and method of manufacturing the same Download PDF

Info

Publication number
JP6509139B2
JP6509139B2 JP2016016704A JP2016016704A JP6509139B2 JP 6509139 B2 JP6509139 B2 JP 6509139B2 JP 2016016704 A JP2016016704 A JP 2016016704A JP 2016016704 A JP2016016704 A JP 2016016704A JP 6509139 B2 JP6509139 B2 JP 6509139B2
Authority
JP
Japan
Prior art keywords
press
fit
hole
diameter
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016016704A
Other languages
Japanese (ja)
Other versions
JP2017135351A (en
Inventor
裕明 鈴木
裕明 鈴木
北林 徹夫
徹夫 北林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Niterra Co Ltd
Original Assignee
NGK Spark Plug Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Spark Plug Co Ltd filed Critical NGK Spark Plug Co Ltd
Priority to JP2016016704A priority Critical patent/JP6509139B2/en
Publication of JP2017135351A publication Critical patent/JP2017135351A/en
Application granted granted Critical
Publication of JP6509139B2 publication Critical patent/JP6509139B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

本発明は、半導体ウエハなどの対象物を支持する基板支持装置及びその製造方法に関する。   The present invention relates to a substrate support apparatus for supporting an object such as a semiconductor wafer and a method of manufacturing the same.

半導体ウエハのプラズマ処理を行うプラズマ処理装置では、半導体ウエハを支持する基板支持装置として、支持面がセラミックス溶射膜からなる静電チャックが用いられることがある。   In a plasma processing apparatus that performs plasma processing of a semiconductor wafer, an electrostatic chuck whose support surface is formed of a ceramic sprayed film may be used as a substrate support apparatus that supports the semiconductor wafer.

静電チャックには、ヘリウムガス、アルゴンガスなどのガスを流すために、ガス流路が設けられている。ガス流路内のアーキング(異常放電)を防止するために、ガス流路を絶縁させる必要がある。   The electrostatic chuck is provided with a gas flow path for flowing a gas such as helium gas or argon gas. In order to prevent arcing (abnormal discharge) in the gas flow path, it is necessary to insulate the gas flow path.

そこで、特許文献1には、絶縁性を有し貫通孔が形成されたセラミックス多孔質体(圧入体)を、金属製の基材に形成した穴(被圧入穴)に圧入し、その後、基材及びセラミックス多孔質体の上面にセラミックス溶射膜を形成することが記載されている。   Therefore, in Patent Document 1, a ceramic porous body (press-fit body) having insulating properties and in which through-holes are formed is press-fit into a hole (press-fit hole) formed in a metal base, and then a base It is described that a ceramic sprayed film is formed on the top surface of the material and the ceramic porous body.

特許第5449750号公報Patent No. 5449750 gazette

しかしながら、特許文献1に記載された技術では、セラミックス多孔質体を基材に形成した被圧入穴に圧入させているが、実際には、セラミックス多孔質体の先端部と被圧入穴の開口端との間に隙間が存在しなければ、圧入は非常に困難である。   However, in the technique described in Patent Document 1, although the ceramic porous body is press-fit into the press-in hole formed in the base material, actually, the open end of the ceramic porous body and the open end of the press-in hole If there is no gap between them, press-in is very difficult.

しかし、このような隙間が存在すると、基材及びセラミックス多孔質体の上面にセラミックス溶射膜を形成した際に、クラック又は窪みなどの欠陥が生じ、吸着性能が劣化する。   However, when such a gap is present, when the ceramic sprayed film is formed on the upper surface of the base material and the ceramic porous body, defects such as cracks or dents occur, and the adsorption performance is deteriorated.

本発明は、かかる事情に鑑みてなされたものであり、セラミックス溶射膜に欠陥が生じることの防止を図ることが可能な基板支持装置及びその製造方法を提供することを目的とする。   The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a substrate supporting apparatus capable of preventing the occurrence of defects in a ceramic sprayed film and a method for manufacturing the same.

本発明の基板支持装置は、導電性材料からなる基材と、前記基材に形成された被圧入穴に圧入され、貫通孔を有し、絶縁性材料からなる圧入体と、前記被圧入穴に圧入された前記圧入体及び前記基材の面一の上面を覆うセラミックス溶射膜とを備えた基板支持装置であって、前記被圧入穴は、開口端から連続的又は断続的に縮径しており、前記圧入体は、前記被圧入穴に圧入された際に前記被圧入穴の縮径した周壁と圧接する部分と、前記部分より大径の部分を基端に有し、前記基材の表面と前記圧入体との基端面との段差は30μm以下であり、前記被圧入穴の開口端と前記圧入体の基端との隙間は、5μm以上60μm以下であることを特徴とする。   A substrate supporting apparatus according to the present invention includes a base made of a conductive material, and a press-fit body press-fit into a press-fit hole formed in the base, having a through hole and made of an insulating material, and the press-fit hole A substrate supporting device comprising the press-fit body press-fit into the substrate and the ceramic sprayed film covering the upper surface of the base of the substrate, wherein the press-in hole is continuously or intermittently reduced in diameter from the open end The press-fit body has at its proximal end a portion to be in pressure contact with the diameter-reduced peripheral wall of the press-fit hole when pressed into the press-fit hole, and a portion larger in diameter than the portion; The step between the surface of the press-fit body and the base end face is 30 μm or less, and the gap between the open end of the press-fit hole and the base end of the press-fit body is 5 μm to 60 μm.

本発明の基板支持装置によれば、基材に形成された被圧入穴は開口端から連続的又は断続的に縮径している。この縮径により、被圧入穴に圧入する際に圧入体がガイドされるので、傾斜して圧入できないなどの事態が防止され、圧入作業の容易化を図ることが可能となる。   According to the substrate supporting apparatus of the present invention, the press-fit hole formed in the base material is continuously or intermittently reduced in diameter from the open end. This diameter reduction guides the press-fit body when press-fitting into the press-fit hole, thereby preventing a situation where the press-fit can not be performed by tilting or the like, and the press-fitting operation can be facilitated.

そして、圧入体は、被圧入穴に圧入された際に被圧入穴の縮径した周壁と圧接する部分より大径の部分を基端に有する。そのため、このような大径の部分を圧入体が備えない場合と比較して、被圧入穴の開口端と圧入体の基端との隙間を小さくすることが可能となる。そのため、被圧入穴に圧入された圧入体及び基材の上面を覆うセラミックス溶射膜に、隙間への落ち込みによるクラック、窪みなどの欠陥が生じて、吸着性能などが劣化するおそれの低下を図ることが可能となる。   Then, the press-fit body has at its proximal end a portion larger in diameter than a portion pressed against the diameter-reduced peripheral wall of the press-fit hole when pressed into the press-fit hole. Therefore, it is possible to reduce the gap between the open end of the press-fit hole and the proximal end of the press-fit body, as compared with the case where the press-fit body does not have such a large diameter portion. Therefore, defects such as cracks and depressions due to falling into gaps are generated in the ceramic spray coating covering the upper surfaces of the press-fit body and the base material press-fit into the press-fit holes, thereby reducing the possibility of deteriorating the adsorption performance. Is possible.

また、基材の表面と圧入体との基端面との段差が30μm以下である。これにより、後述する実施例から明らかなように、セラミックス溶射膜にクラック、窪みなどの欠陥が生じることの解消を図ることが可能となる。なお、段差は10μm以下であることが好ましい。   Moreover, the level | step difference of the surface of a base material and the base end surface of a press injection body is 30 micrometers or less. As a result, as is apparent from Examples described later, it is possible to eliminate the occurrence of defects such as cracks and depressions in the ceramic sprayed film. The level difference is preferably 10 μm or less.

さらに、被圧入穴の開口端と圧入体の基端との隙間は、5μm以上60μm以下である。なお、この隙間は被圧入穴の開口端の直径と圧入体の基端の直径との差の1/2と定義する。   Furthermore, the gap between the open end of the press-fit hole and the proximal end of the press-fit body is 5 μm or more and 60 μm or less. This gap is defined as 1/2 of the difference between the diameter of the open end of the press-fit hole and the diameter of the proximal end of the press-fit body.

被圧入穴の開口端と圧入体の基端との隙間が5μm未満であると、被圧入穴に圧入する際に圧入体が良好にガイドされない。一方、被圧入穴の開口端と圧入体の基端との隙間が60μmを超えると、セラミックス溶射膜にクラック、窪みなどの欠陥が生じ、吸着性能などが劣化するおそれが生じる。   When the gap between the open end of the press-fit hole and the base end of the press-fit body is less than 5 μm, the press-fit body is not well guided when press-fitting into the press-fit hole. On the other hand, if the gap between the opening end of the press-in hole and the base end of the press-fit body exceeds 60 μm, defects such as cracks and dents occur in the ceramic sprayed film, and the adsorption performance may be deteriorated.

また、本発明の基板支持装置において、前記被圧入穴は、前記圧入体が前記圧入穴に圧入された際に圧接する前記周壁の部分よりも奥側に、当該部分よりも縮径した部分を有し、前記圧入体は、前記被圧入穴に圧入された際に前記被圧入穴の周壁と圧接する部分より奥側に、前記被圧入穴の周壁との間に隙間を有する部分を有することが好ましい。   Further, in the substrate supporting apparatus of the present invention, the press-fit hole is a portion having a diameter smaller than the portion on the back side of the portion of the peripheral wall pressed against when the press-fit body is press-fit into the press-fit hole. The press-fit body has a portion having a gap between the press-fit hole and the circumferential wall of the press-fit hole on the back side of the portion pressed against the circumferential wall of the press-fit hole when pressed into the press-fit hole. Is preferred.

この場合、被圧入穴と圧入体とが当接する部分を減少して、圧入の容易化を図ることが可能となる。   In this case, the portion where the press-fit hole and the press-fit body abut each other can be reduced to facilitate press-fitting.

本発明の基板支持装置の製造方法は、導電性材料からなる基材に開口端から連続的又は断続的に縮径するように形成され被圧入穴に、貫通孔を有し、絶縁性材料からなる圧入体を圧入させて、前記圧入体を部分的に前記被圧入穴の縮径した周壁に圧接させ、前記基材の表面と前記圧入体との基端面との段差を30μm以下にする工程と、前記基材の表面と前記圧入体との基端面との上にセラミックス粉末を溶射してセラミックス溶射膜を形成する工程とを備えたことを特徴とする。   The method for manufacturing a substrate supporting device according to the present invention is a method of manufacturing a substrate made of a conductive material, having a through hole in a press-in hole formed to be continuously or intermittently reduced in diameter from an open end. Forming a press-fit body and pressing the press-fit body into partial contact with the peripheral wall of the press-fit hole to reduce the difference in height between the surface of the base and the base end face of the press-fit body to 30 μm or less And a step of thermally spraying a ceramic powder on the surface of the base material and the base end face of the press-fit body to form a ceramic sprayed film.

本発明の基板支持装置の製造方法によれば、基材に形成された被圧入穴は開口端から連続的又は断続的に縮径している。この縮径により、被圧入穴に圧入する際に圧入体がガイドされるので、傾斜して圧入できないなどの事態が防止され、圧入作業が容易となる。   According to the method of manufacturing a substrate support device of the present invention, the press-fit hole formed in the base material is continuously or intermittently reduced in diameter from the open end. This diameter reduction guides the press-fit body when press-fitting into the press-fit hole, thereby preventing a situation in which the press-fit can not be performed by tilting or the like, and the press-fitting operation becomes easy.

そして、圧入体は、被圧入穴に圧入された際に被圧入穴の縮径した周壁と圧接する部分より大径の部分を基端に有する。そのため、このような大径の部分を圧入体が備えない場合と比較して、被圧入穴の開口端と圧入体の基端との隙間を小さくすることが可能となる。そのため、被圧入穴に圧入された圧入体及び基材の上面を覆うセラミックス溶射膜に、隙間への落ち込みによるクラック、窪みなどの欠陥が生じて、吸着性能などが劣化するおそれの低下を図ることが可能となる。   Then, the press-fit body has at its proximal end a portion larger in diameter than a portion pressed against the diameter-reduced peripheral wall of the press-fit hole when pressed into the press-fit hole. Therefore, it is possible to reduce the gap between the open end of the press-fit hole and the proximal end of the press-fit body, as compared with the case where the press-fit body does not have such a large diameter portion. Therefore, defects such as cracks and depressions due to falling into gaps are generated in the ceramic spray coating covering the upper surfaces of the press-fit body and the base material press-fit into the press-fit holes, thereby reducing the possibility of deteriorating the adsorption performance. Is possible.

また、基材の表面と圧入体との基端面との段差が30μm以下となるように圧入体を被圧入穴に圧入している。これにより、後述する実施例から明らかなように、セラミックス溶射膜にクラック、窪みなどの欠陥が生じることの解消を図ることが可能となる。   Further, the press-fit body is press-fit into the press-fit hole such that the step between the surface of the base material and the base end face of the press-fit body is 30 μm or less. As a result, as is apparent from Examples described later, it is possible to eliminate the occurrence of defects such as cracks and depressions in the ceramic sprayed film.

本発明の基板支持装置は、導電性材料からなる基材と、前記基材に形成された被圧入穴に圧入され、貫通孔を有し、絶縁性材料からなる圧入体と、前記被圧入穴に圧入された前記圧入体及び前記基材の面一の上面を覆うセラミックス溶射膜とを備えた基板支持装置であって、前記被圧入穴は、開口端から連続的又は断続的に縮径しており、前記圧入体は、前記被圧入穴に圧入された際に前記被圧入穴の縮径した周壁と圧接する部分を有し、前記基材の表面と前記圧入体との基端面との段差は30μm以下であることを特徴とする。   A substrate supporting apparatus according to the present invention includes a base made of a conductive material, and a press-fit body press-fit into a press-fit hole formed in the base, having a through hole and made of an insulating material, and the press-fit hole A substrate supporting device comprising the press-fit body press-fit into the substrate and the ceramic sprayed film covering the upper surface of the base of the substrate, wherein the press-in hole is continuously or intermittently reduced in diameter from the open end The press-fit body has a portion to be in pressure contact with the diameter-reduced peripheral wall of the press-fit hole when pressed into the press-fit hole, and the surface of the base and the proximal end face of the press-fit body The difference in level is 30 μm or less.

本発明の基板支持装置によれば、基材に形成された被圧入穴は開口端から連続的又は断続的に縮径している。この縮径により、被圧入穴に圧入する際に圧入体がガイドされるので、傾斜して圧入できないなどの事態が防止され、圧入作業の容易化を図ることが可能となる。   According to the substrate supporting apparatus of the present invention, the press-fit hole formed in the base material is continuously or intermittently reduced in diameter from the open end. This diameter reduction guides the press-fit body when press-fitting into the press-fit hole, thereby preventing a situation where the press-fit can not be performed by tilting or the like, and the press-fitting operation can be facilitated.

そして、基材の表面と圧入体との基端面との段差が30μm以下である。これにより、後述する実施例から明らかなように、セラミックス溶射膜にクラック、窪みなどの欠陥が生じることの解消を図ることが可能となる。なお、段差は10μm以下であることが好ましい。   And the level | step difference of the surface of a base material and the base end surface of a press injection body is 30 micrometers or less. As a result, as is apparent from Examples described later, it is possible to eliminate the occurrence of defects such as cracks and depressions in the ceramic sprayed film. The level difference is preferably 10 μm or less.

本発明の実施形態に係る静電チャックの部分模式断面図。FIG. 1 is a partial schematic cross-sectional view of an electrostatic chuck according to an embodiment of the present invention. 被圧入穴を示す部分模式断面図。The partial schematic cross section which shows a press-fit hole. 圧入体を示す模式断面図Schematic cross-sectional view showing a press-fit body 本発明の実施形態の変形例に係る静電チャックの部分模式断面図。The partial schematic cross section of the electrostatic chuck which concerns on the modification of embodiment of this invention.

(静電チャックの構造)
まず、本発明の基板支持装置の実施形態に係る静電チャック100について図1乃至図3を参照して、説明する。
(Structure of electrostatic chuck)
First, an electrostatic chuck 100 according to an embodiment of a substrate supporting apparatus of the present invention will be described with reference to FIGS. 1 to 3.

静電チャック100は、半導体製造装置、フラットパネルディスプレイ製造装置などにおいて半導体ウエハ等を固定するために使用される。図1には、静電チャック100のガス流路の部分が示されている。このようなガス流路は、静電チャック100に複数個形成されている。静電チャック100は、図示しないが、全体として略円盤形状に形成されている。   The electrostatic chuck 100 is used to fix a semiconductor wafer or the like in a semiconductor manufacturing apparatus, a flat panel display manufacturing apparatus, or the like. A portion of the gas flow path of the electrostatic chuck 100 is shown in FIG. A plurality of such gas flow paths are formed in the electrostatic chuck 100. Although not shown, the electrostatic chuck 100 is formed in a substantially disk shape as a whole.

静電チャック100は、導電性材料からなる基材10と、基材10に形成された被圧入穴11に圧入され、貫通孔を有し、絶縁性材料からなる圧入体20と、被圧入穴11に圧入された圧入体20及び基材10の面一の上面を覆うセラミックス溶射膜30とを備えている。   The electrostatic chuck 100 includes a base 10 made of a conductive material, a press-fit hole 11 formed in the base 10 and a press-fit body 20 having a through hole and made of an insulating material, and a press-fit hole A ceramic sprayed film 30 is provided which covers the upper surface of the press-fit body 20 pressed into 11 and the flush upper surface of the base material 10.

基材10は、例えば、アルミニウム、モリブデン等の金属、又はアルミニウム、シリコンなどの金属と炭化珪素、酸化アルミニウムなどのセラミックスとの複合体から構成されている。基材10は、全体として略円盤状に形成されている。   The base 10 is made of, for example, a metal such as aluminum or molybdenum, or a composite of a metal such as aluminum or silicon and a ceramic such as silicon carbide or aluminum oxide. The base 10 is formed in a substantially disc shape as a whole.

基材10には、圧入体20が圧入される被圧入穴11が形成されている。被圧入穴11は、本実施形態では、基材10内に形成された図示しない中空構造の内腔と連通する穴である。ただし、被圧入穴11は、基材10の上面から下面まで貫通する貫通孔であってもよい。   The base 10 is formed with a press-fit hole 11 into which the press-fit body 20 is press-fitted. In the present embodiment, the press-fit hole 11 is a hole that communicates with a not-shown hollow structure formed in the base material 10. However, the press-fit holes 11 may be through holes penetrating from the upper surface to the lower surface of the base material 10.

被圧入穴11は、開口端から連続的又は断続的に縮径している。被圧入穴11は、本実施形態では、圧入体20の外周壁と密着する内周壁を有する被圧入穴部11aと、開口端に位置し、被圧入穴部11aの直径Daよりも僅かに大きな直径Dbを有する拡径穴部11bとを備えている。被圧入穴部11aの直径Daは、例えば、1mm以上12mm以下が好ましい。そして、被圧入穴部11aと拡径穴部11bの間には段差が形成されている。ただし、被圧入穴部11aと拡径穴部11bの間にはテーパ状などの壁面が形成されているものであってもよい。   The press-fit hole 11 is continuously or intermittently reduced in diameter from the open end. In the present embodiment, the press-fit hole 11 is located at the opening end and a press-fit hole portion 11a having an inner peripheral wall in close contact with the outer peripheral wall of the press-fit body 20, and slightly larger than the diameter Da of the press-fit hole portion 11a. And an enlarged diameter hole 11b having a diameter Db. The diameter Da of the press-fit hole 11a is preferably, for example, 1 mm or more and 12 mm or less. A step is formed between the press-fit hole 11a and the enlarged diameter hole 11b. However, a tapered wall or the like may be formed between the press-fit hole 11a and the enlarged diameter hole 11b.

被圧入穴11は、さらに、被圧入穴部11aより奥方(図1の下方)側に位置し、被圧入穴部11aの直径Daよりも小さな直径Dcを有する縮径穴部11cも備えている。これにより、被圧入穴11は、圧入体20が被圧入穴11に圧入された際に圧接する被圧入穴部11aよりも奥側に、当該被圧入穴部11aよりも縮径した部分である縮径穴部11cを有している。そして、被圧入穴部11aと縮径穴部11cの間にはテーパ状の壁面が形成されている。ただし、被圧入穴部11aと縮径穴部11cの間に段差が形成されているものであってもよい。縮径穴部11cは圧入体20の圧入深さ過大を防止する機能もあるが、被圧入穴11は縮径穴部11cを備えないものであってもよい。   The press-fit hole 11 is further provided with a diameter-reduced hole portion 11c located on the back side (downward in FIG. 1) side of the press-fit hole portion 11a and having a diameter Dc smaller than the diameter Da of the press-fit hole portion 11a. . Thus, the press-fit hole 11 is a portion having a diameter smaller than that of the press-fit hole 11a on the back side of the press-fit hole 11a that is pressed against when the press-fit body 20 is press-fit into the press-fit hole 11. It has a diameter reducing hole 11c. A tapered wall is formed between the press-fit hole 11a and the diameter-reduced hole 11c. However, a step may be formed between the press-fit hole 11a and the diameter-reduced hole 11c. Although the diameter reducing hole 11c has a function of preventing the press-fitting depth of the press-fitting body 20 from being excessive, the press-fit hole 11 may not have the diameter-reducing hole 11c.

圧入体20は、絶縁性材料からなり、基材10の被圧入穴11に圧入されるプラグである。圧入体20は、全体として、大略円柱形状であり、軸心を中心として軸心方向に貫通する貫通孔21が形成されている。また、圧入体20の先端面(図1の下方側の面)には凹部22が形成されている場合がある。貫通孔21と凹部22でガス流路のコンダクタンスを調整する機能がある。   The press-fit body 20 is a plug made of an insulating material and press-fit into the press-fit hole 11 of the base 10. The press-fit body 20 has a generally cylindrical shape as a whole, and a through hole 21 penetrating in the axial direction centering on the axial center is formed. Moreover, the recessed part 22 may be formed in the front end surface (surface of the downward side of FIG. 1) of the press-fit body 20. As shown in FIG. The through hole 21 and the recess 22 have a function of adjusting the conductance of the gas flow path.

圧入体20は、Al、SiO、ZrOもしくはY又はこれらの複合材などからなるセラミックス多孔質体から形成されることが好ましい。ただし、圧入体20は、Al、SiO、ZrOもしくはY又はこれらの複合材などからなるセラミックス緻密質体から形成されていてもよい。 The press-fit body 20 is preferably formed of a ceramic porous body made of Al 2 O 3 , SiO 2 , ZrO 2 or Y 2 O 3, or a composite material of these. However, the press-fit body 20 may be formed of a ceramic dense body made of Al 2 O 3 , SiO 2 , ZrO 2 or Y 2 O 3 or a composite material of these.

例えば、Alからら圧入体20を形成する場合、Alの純度は99.5%以上であることが好ましく、99.9%以上であればさらに好ましい。純度が高いほど、半導体ウエハ等への汚染を防止することが可能となる。 For example, when an Al 2 O 3 Carrara pressed body 20, it is preferable that the purity of Al 2 O 3 99.5% or more, further preferably equal to 99.9%. As the purity is higher, it is possible to prevent contamination of semiconductor wafers and the like.

そして、圧入体20は、被圧入穴11に圧入された際に被圧入穴部11aの周壁と圧接する部分である基部20aと、基部20aの直径daよりも大きな直径dbを有し、基端に位置する拡径部20bとを備えている。そして、基部20aと拡径部20bの間には段差が形成されている。ただし、基部20aと拡径部20bの間はテーパ状などに形成されているものであってもよい。ただし、被圧入穴11の開口端と圧入体20の基端との間に所定の隙間が形成されるのであれば、拡径部20bは省略してもよい。   The press-fit body 20 has a base 20a which is a portion pressed against the peripheral wall of the press-fit hole 11a when press-fitted into the press-fit hole 11, and a diameter db larger than the diameter da of the base 20a. And an enlarged diameter portion 20b located on the And a level | step difference is formed between the base 20a and the enlarged diameter part 20b. However, the space between the base portion 20a and the enlarged diameter portion 20b may be tapered. However, if a predetermined gap is formed between the open end of the press-fit hole 11 and the proximal end of the press-fit body 20, the enlarged diameter portion 20b may be omitted.

被圧入穴部11aの直径Daと基部20aの直径daとは、基部20aが被圧入穴部11aに圧入された際に、締り嵌めとなるような寸法に設定されている。本実施形態では、基部20aが被圧入穴部11aの全体に亘って圧入されるのではなく、それぞれの一部において圧入されるように構成されている。   The diameter Da of the press-fit hole 11a and the diameter da of the base 20a are set to dimensions such that an interference fit is achieved when the base 20a is press-fit into the press-fit hole 11a. In the present embodiment, the base portion 20a is not press-fit over the entire press-fit hole 11a, but is configured to be press-fit in part of each.

圧入体20は、さらに、基部20aの直径daよりも小さな直径dcを有し、先端側に位置する縮径部20cをも備えている。圧入体20は、被圧入穴11に圧入された際に被圧入穴部11aと圧接する基部20aより先端側に、縮径穴部11cとの間に隙間を有する部分である縮径部20cを有している。そして、基部20aと縮径部20cの間には段差が形成されている。ただし、基部20aと縮径部20cの間はテーパ状などに形成されているものであってもよい。   The press-fit body 20 further has a diameter dc smaller than the diameter da of the base 20a, and also includes a reduced diameter portion 20c located on the tip side. The press-fit body 20 has a reduced diameter portion 20c, which is a portion having a gap with the diameter-reduced hole portion 11c on the tip end side from the base 20a which is in pressure contact with the press-fit hole 11a when pressed into the press-fit hole 11. Have. And a level | step difference is formed between the base 20a and the diameter reduction part 20c. However, between the base 20a and the reduced diameter portion 20c may be formed in a tapered shape or the like.

拡径穴部11bの直径Dbは、圧入体20が被圧入穴11に圧入された際に、基部20aと接触しないような隙間を有するように設定されている。例えば、拡径穴部11bの直径Dbは、被圧入穴部11aの直径よりも20μm以上大きいことが好ましいが、圧入体20の被圧入穴11への挿入ガイドの機能を奏するのであればこの限りではない。   The diameter Db of the enlarged diameter hole portion 11 b is set to have a gap that does not contact the base portion 20 a when the press-fit body 20 is press-fit into the press-fit hole 11. For example, the diameter Db of the enlarged diameter hole portion 11b is preferably larger than the diameter of the press-fit hole portion 11a by 20 μm or more, but as long as the function of the insertion guide to the press-fit hole 11 of the press-fit body 20 is exhibited is not.

拡径穴部11bの直径Dbは、圧入体20が被圧入穴11に圧入された際に、拡径部20bとも接触しないような隙間を有するように設定されている。そして、これにより、被圧入穴11の開口端と圧入体20の基端との隙間sは、例えば、5μm以上60μm以下であることが好ましく、10μm以上50μm以下であることがより好ましい。   The diameter Db of the enlarged diameter hole portion 11 b is set so as to have a gap that does not come in contact with the enlarged diameter portion 20 b when the press-fit body 20 is pressed into the pressed-in hole 11. And thereby, it is preferable that they are 5 micrometers or more and 60 micrometers or less, for example, and, as for the clearance gap s of the opening end of the press-fit hole 11 and the base end of the press injection body 20, it is more preferable that they are 10 micrometers or more 50 micrometers or less.

縮径穴部11cの直径Dcと縮径部20cの直径dcとは、圧入体20が被圧入穴11に圧入される際に、圧入を妨げないような寸法に設定されている。縮径穴部11cと縮径部20cとの間の隙間は、数mm程度であってもよい。なお、圧入体20は縮径部20cを備えないものであってもよい。   The diameter Dc of the reduced diameter hole portion 11c and the diameter dc of the reduced diameter portion 20c are set so as not to prevent the press fit when the press fit body 20 is pressed into the press fit hole 11. The clearance between the diameter reducing hole 11 c and the diameter reducing portion 20 c may be about several mm. The press-fit body 20 may not include the diameter-reduced portion 20c.

被圧入穴11に圧入された圧入体20の基端面及び基材10の上面とは面一となっている。ただし、この部分には、30μm以下であれば、段差h(不図示)があってもよい。   The base end face of the press-fit body 20 press-fit into the press-fit hole 11 and the upper surface of the base 10 are flush with each other. However, a step h (not shown) may be present in this portion as long as it is 30 μm or less.

セラミックス溶射膜30は、被圧入穴11に圧入された圧入体20及び基材10の面一の上面を覆っている。セラミックス溶射膜30は、Al、Y、ZrOなどのセラミックス粉末又はこれらを主成分とした複合物からなるセラミックス複合物粉末が溶射により形成されている。 The ceramic sprayed film 30 covers the flush upper surface of the press-fit body 20 and the base material 10 which are press-fit into the press-fit holes 11. The ceramic sprayed film 30 is formed by thermal spraying ceramic powder such as ceramic powder such as Al 2 O 3 , Y 2 O 3 and ZrO 2 or a composite mainly composed of these.

セラミックス溶射膜30の厚みは、100μm以上1000μm以下であることが好ましい。セラミックス溶射膜30には、その上面から下面に亘り、圧入体20の貫通孔21に挿通する貫通孔31が形成されている。このセラミックス溶射膜30の貫通孔31と圧入体20の貫通孔21とで、ガス流路を形成する。このように、基材10に露出しないガス流路を確保することにより、ガス流路の絶縁性が確保され、アーキングの発生を防止することが可能となる。   The thickness of the ceramic sprayed film 30 is preferably 100 μm or more and 1000 μm or less. A through hole 31 is formed in the ceramic sprayed film 30 from the upper surface to the lower surface to be inserted into the through hole 21 of the press-fit body 20. A gas flow path is formed by the through holes 31 of the ceramic spray coating 30 and the through holes 21 of the press-fit body 20. As described above, by securing the gas flow path which is not exposed to the base material 10, the insulation property of the gas flow path is secured, and it becomes possible to prevent the occurrence of arcing.

(静電チャックの製造方法)
次に、本発明の基板支持装置に係る静電チャック100の製造方法について説明する。
(Method of manufacturing electrostatic chuck)
Next, a method of manufacturing the electrostatic chuck 100 according to the substrate supporting apparatus of the present invention will be described.

まず、金属又は金属とセラミックスとの複合体から形成された略円盤状の基材10を用意する。この基材10には、研削加工及び研磨加工によって被圧入穴11を形成しておく。   First, a substantially disk-shaped substrate 10 formed of a metal or a composite of a metal and a ceramic is prepared. Press-fit holes 11 are formed in the base 10 by grinding and polishing.

また、セラミックス多孔質体又はセラミックス緻密質体からなる圧入体20を用意する。この圧入体20には、研削加工及び研磨加工によって形成されたものである。   Further, a press-fit body 20 made of a ceramic porous body or a ceramic dense body is prepared. The press-fit body 20 is formed by grinding and polishing.

そして、基材10の被圧入穴11に圧入体20を圧入させる。このとき、被圧入穴11の開口端は拡径穴部11bにより、圧入体20の基部20aがガイドされるので、圧入体20が傾斜して圧入できないなどの事態が防止され、圧入作業の容易化を図ることが可能となる。   Then, the press-fit body 20 is press-fit into the press-fit hole 11 of the base material 10. At this time, since the base 20a of the press-fit body 20 is guided by the enlarged diameter hole portion 11b at the open end of the press-fit hole 11, a situation where the press-fit body 20 is inclined and can not be press-fit is prevented. It is possible to achieve

被圧入穴11に圧入体20を圧入させる際、圧入体20の基端面より大きな平坦面を有するプレス装置を用いる。これにより、基材10の表面と圧入体20の基端面とを面一にすることが可能となる。ただし、圧入体20の極微小な弾性変形により、基材10の表面と圧入体20の基端面とを完全に面一にすることは困難である。そこで、これらの間の段差hを30μm以下にすればよい。   When the press-fit body 20 is press-fit into the press-fit hole 11, a press device having a flat surface larger than the base end face of the press-fit body 20 is used. This makes it possible to make the surface of the base 10 and the base end face of the press-fit body 20 flush with each other. However, it is difficult to completely make the surface of the base 10 and the base end face of the press-fit body 20 flush with each other due to the extremely small elastic deformation of the press-fit body 20. Therefore, the difference in height h between them may be 30 μm or less.

その後、被圧入穴11に圧入された圧入体20及び基材10の上面に、セラミックス粉末又はセラミックス複合物粉末を溶射して、セラミックス溶射膜30を形成する。   Thereafter, the ceramic powder or the ceramic composite powder is thermally sprayed on the upper surfaces of the press-fit body 20 and the base material 10 pressed into the press-fit holes 11 to form the ceramic sprayed film 30.

そして、セラミックス溶射膜30に、その上面から下面に亘り、圧入体20の貫通孔21に挿通する貫通孔31を研削加工により形成する。   Then, through holes 31 to be inserted into the through holes 21 of the press-fit body 20 are formed in the ceramic sprayed film 30 by grinding from the upper surface to the lower surface.

本実施形態において、圧入体20は拡径部20bを基端に有する。そのため、このような拡径部20bを圧入体20が備えない場合と比較して、被圧入穴11の開口端と圧入体20の基端との隙間sを小さくすることが可能となる。そのため、被溶射時の隙間sへの落ち込みによって被圧入穴11に圧入された圧入体20及び基材10の上面を覆うセラミックス溶射膜30にクラック、窪みなどの欠陥が生じ、静電チャック100の吸着性能などが劣化するおそれの低下を図ることが可能となる。   In the present embodiment, the press-fit body 20 has the enlarged diameter portion 20 b at the proximal end. Therefore, it is possible to reduce the gap s between the open end of the press-fit hole 11 and the base end of the press-fit body 20 as compared to the case where the press-fit body 20 does not include such an enlarged diameter portion 20 b. Therefore, defects such as cracks and depressions occur in the ceramic sprayed film 30 covering the upper surfaces of the press-fit body 20 and the base 10 pressed into the press-fit hole 11 due to the fall into the gap s at the time of thermal spraying. It becomes possible to aim at the fall of a possibility that adsorption performance etc. may deteriorate.

また、基材10の表面と圧入体20との基端面との間の段差hは30μm以下であるので、後述する実施例から明らかなように、セラミックス溶射膜30にクラック、窪みなどの欠陥が生じることの解消を図ることが可能となる。   Further, since the step h between the surface of the base material 10 and the base end face of the press-fit body 20 is 30 μm or less, defects such as cracks and dents in the ceramic sprayed film 30 are apparent from Examples to be described later. It becomes possible to aim at the elimination of what happens.

(静電チャックの構造の変形例)
本発明の基板支持装置は、上述した実施形態に係る静電チャック100に限定されない。
(Modified example of structure of electrostatic chuck)
The substrate support apparatus of the present invention is not limited to the electrostatic chuck 100 according to the above-described embodiment.

例えば、被圧入穴11又は圧入体20の角部は、丸みを帯びていても、面取りが施されていてもよい。また、被圧入穴11又は圧入体20のテーパは、直線的であっても曲線的であってもよい。   For example, the corners of the press-fit hole 11 or the press-fit body 20 may be rounded or chamfered. In addition, the taper of the press-in hole 11 or the press-in body 20 may be linear or curved.

さらに、例えば図4に示すように、被圧入穴11が被圧入穴部11aと縮径穴部11cとの間に、被圧入穴部11aの直径Daよりも大きな直径Ddを有する拡径穴部11dを有するものであってもよい。このような拡径穴部11dが存在することにより、被圧入穴11と圧入体20との圧入深さが短くなり、圧入作業の容易化を図ることが可能となる。   Furthermore, for example, as shown in FIG. 4, the diameter-increased hole 11 has a diameter Dd larger than the diameter Da of the pressure-inserted hole 11a between the pressure-inserted hole 11a and the diameter-reduced hole 11c. It may have 11 d. By the presence of such an enlarged diameter hole portion 11d, the press-fitting depth of the press-fit hole 11 and the press-fitting body 20 becomes short, and the press-fitting operation can be facilitated.

また、被圧入穴部11aの直径Daと基部20aの直径daとは、基部20aが被圧入穴部11aに圧入された際に、中間嵌めとなるような寸法に設定してもよい。   Further, the diameter Da of the press-fit hole 11a and the diameter da of the base 20a may be set to be an intermediate fit when the base 20a is press-fit into the press-fit hole 11a.

(圧入体の製作)
圧入体20の原料粉末として、純度99.9%以上、平均粒径20μmのAlセラミックス粉末を用意した。そして、この原料粉末を成形型に入れて1600度で2時間、5MPaでホットプレス焼成して、気孔率23%、平均気孔穴径3μmのアルミナ多孔質体を得た。
(Production of press-fit body)
As a raw material powder of the press-fit body 20, Al 2 O 3 ceramic powder having a purity of 99.9% or more and an average particle diameter of 20 μm was prepared. Then, this raw material powder was put into a molding die and subjected to hot press baking at 5 ° C. for 2 hours at 1600 ° C. to obtain an alumina porous body having a porosity of 23% and an average pore diameter of 3 μm.

別の圧入体20の原料粉末として、純度99.5%以上、平均粒径0.5μmのAlセラミックス粉末を用意した。そして、この原料粉末を成形型に入れて1600度で2時間、常圧焼成して、気孔率1%以下、平均気孔穴径1μm以下のアルミナ焼結体を得た。 As another raw material powder of the press-fit body 20, Al 2 O 3 ceramic powder having a purity of 99.5% or more and an average particle diameter of 0.5 μm was prepared. Then, this raw material powder was put into a molding die and fired under atmospheric pressure at 1600 ° C. for 2 hours to obtain an alumina sintered body having a porosity of 1% or less and an average pore diameter of 1 μm or less.

そして、これらに研削加工及び研磨加工を施して、30個の圧入体20を形成した。圧入体20の軸心には直径0.5mmの貫通孔21を形成した。   Then, they were ground and polished to form 30 press-fit bodies 20. A through hole 21 with a diameter of 0.5 mm was formed in the axial center of the press-fit body 20.

(基材の製作)
基材10の素材1として、アルミニウム合金(A6061)からなり、直径300mm、厚み50mmの円盤状のものを用意した。そして、これに研削加工及び研磨加工を施して、30個の上下面を貫通した被圧入穴11を形成した。
(Production of base material)
As a raw material 1 of the base material 10, a disc-like material made of an aluminum alloy (A6061) and having a diameter of 300 mm and a thickness of 50 mm was prepared. Then, this was subjected to grinding and polishing to form press-fit holes 11 penetrating the 30 upper and lower surfaces.

基材10の別素材2として、ステンレス鋼(SUS304)からなり、直径300mm、厚み50mmの円盤状のものを用意した。そして、これに研削加工及び研磨加工を施して、30個の上下面を貫通した被圧入穴11を形成した。   As another raw material 2 of the base material 10, a disk-shaped one made of stainless steel (SUS 304) and having a diameter of 300 mm and a thickness of 50 mm was prepared. Then, this was subjected to grinding and polishing to form press-fit holes 11 penetrating the 30 upper and lower surfaces.

(圧入)
プレス装置を用いて、圧入体20をそれぞれ被圧入穴11に圧入させた。
(Press fit)
The press-fit bodies 20 were press-fit into the press-fit holes 11 respectively using a press device.

(溶射膜の製作)
セラミックス溶射膜30の原料粉末として、純度99.9%、平均粒径20μmのAlセラミックス粉末を用意した。そして、この原料粉末を、被圧入穴11に圧入された圧入体20及び基材10の上面に溶射して、厚さ250μmのセラミックス溶射膜30を形成した。そして、最後に、セラミックス溶射膜30に直径0.5mmの貫通孔31を形成した。
(Production of sprayed film)
An Al 2 O 3 ceramic powder having a purity of 99.9% and an average particle diameter of 20 μm was prepared as a raw material powder of the ceramic sprayed film 30. Then, the raw material powder was sprayed on the upper surfaces of the press-fit body 20 and the base material 10 pressed into the press-fit holes 11 to form a ceramic sprayed film 30 with a thickness of 250 μm. Finally, through holes 31 with a diameter of 0.5 mm were formed in the ceramic sprayed film 30.

(溶射膜製作後の加工)
セラミックス溶射膜30の表面を研削加工、研磨加工により調整後、圧入体20に形成した貫通孔21の直上のセラミックス溶射膜30に直径0.5mmの穴を貫通させる加工を行って貫通孔31を形成し、セラミックス溶射膜30の表面と圧入体20の流路とを接続した。
(Processing after producing the sprayed film)
After adjusting the surface of the ceramic sprayed film 30 by grinding and polishing, the ceramic sprayed film 30 immediately above the through hole 21 formed in the press-fit body 20 is processed to penetrate a hole with a diameter of 0.5 mm. Then, the surface of the ceramic sprayed film 30 and the flow path of the press-fit body 20 were connected.

(実施例1)
基材10は、アルミニウム合金(A6061)からなり、各被圧入穴11は、被圧入穴部11aが直径Da3.9624mmで深さLa3.302mm、拡径穴部11bが直径Db4.248mmで深さLb1.778mm、縮径穴部11cが直径Dc3.505mmで深さLc15mmであった。被圧入穴部11aと拡径穴部11bとの間には段差を形成し、被圧入穴部11aと縮径穴部11cとの間には45度のテーパ面を形成した。
Example 1
The base material 10 is made of an aluminum alloy (A6061), and each press-fit hole 11 has a diameter Da of 3.9624 mm and a depth of La 3.302 mm, and a diameter enlarged hole 11 b of a diameter Db of 4.248 mm. Lb 1.778 mm, diameter reduction hole 11 c had a diameter Dc of 3.505 mm and a depth Lc of 15 mm. A step was formed between the press-fit hole 11a and the enlarged diameter hole 11b, and a 45 ° tapered surface was formed between the press-fit hole 11a and the diameter reduced hole 11c.

圧入体20は、アルミナ多孔質体からなり、基部20aが直径da3.988mmで長さla3.0mm、拡径部20bが直径db4.188mmで長さlb1.5mm、縮径部20cが直径dc3.0mmで長さlc8mmであった。基部20aと拡径部20bとの間及び基部20aと縮径部20cとの間にはそれぞれ段差を形成した。   The press-fit body 20 is made of an alumina porous body, and the base 20a has a diameter of da 3.988 mm and a length of la 3.0 mm, the enlarged diameter portion 20b has a diameter of db 4.188 mm, a length lb of 1.5 mm, and the diameter reduced portion 20c has a diameter dc3. The length was 0 mm and lc was 8 mm. A step was formed between the base 20a and the enlarged diameter portion 20b and between the base 20a and the reduced diameter portion 20c.

被圧入穴11の開口端と圧入体20の基端との隙間sは、30μmであった。   The gap s between the open end of the press-fit hole 11 and the proximal end of the press-fit body 20 was 30 μm.

圧入後の基材10の表面と圧入体20との基端面との間の段差hは、最大15μmであった。   The difference in height h between the surface of the base material 10 after press fitting and the base end face of the press-fit body 20 was 15 μm at maximum.

セラミックス溶射膜30の表面を目視で観察したところ、クラック、窪みなどの欠陥を発見することはできなかった。   When the surface of the ceramic sprayed film 30 was visually observed, it was not possible to find defects such as cracks and depressions.

(実施例2)
基材10は、アルミニウム合金(A6061)からなり、各被圧入穴11は、被圧入穴部11aが直径Da2.474mmで深さLa2.7mm、拡径穴部11bが直径Db2.550mmで深さLb0.9mm、縮径穴部11cが直径Dc2.350mmで深さLc10mmであった。
(Example 2)
The base 10 is made of an aluminum alloy (A6061), and each press-fit hole 11 has a diameter of Da 2.474 mm and a depth of La 2.7 mm, and a diameter-enlarged hole portion 11 b of a diameter Db of 2.550 mm. Lb 0.9 mm, diameter reduction hole 11 c had a diameter Dc of 2.350 mm and a depth Lc of 10 mm.

圧入体20は、、アルミナ多孔質体からなり基部20aが直径da2.489mmで長さla2.388mm、拡径部20bが直径db2.5146mmで長さlb0.660mm、縮径部20cが直径dc2.0mmで長さlc7.62mmであった。   The press-fit body 20 is an alumina porous body, and a base 20a has a diameter da 2.489 mm and a length la 2.388 mm, an enlarged diameter portion 20b a diameter db 2.5146 mm and a length lb 0.660 mm, and a diameter reduced portion 20 c a diameter dc2. The length was 0 mm and lc was 7.62 mm.

被圧入穴11の開口端と圧入体20の基端との隙間sは、18μmであった。   The gap s between the open end of the press-fit hole 11 and the proximal end of the press-fit body 20 was 18 μm.

圧入後の基材10の表面と圧入体20との基端面との間の段差hは、最大10μmであった。   The difference in height h between the surface of the base material 10 after press fitting and the base end face of the press-fit body 20 was 10 μm at maximum.

セラミックス溶射膜30の表面を目視で観察したところ、クラック、窪みなどの欠陥を発見することはできなかった。   When the surface of the ceramic sprayed film 30 was visually observed, it was not possible to find defects such as cracks and depressions.

(実施例3)
基材10は、アルミニウム合金(A6061)からなり、拡径穴部11bが直径Db2.634mmであること以外は、実施例2と同じとした。圧入体20は、実施例2と同じものを用いた。
(Example 3)
The base 10 was made of an aluminum alloy (A6061), and the same as Example 2 except that the diameter-increased hole 11b had a diameter Db of 2.634 mm. As the press-fit body 20, the same one as in Example 2 was used.

被圧入穴11の開口端と圧入体20の基端との隙間sは、60μmであった。   The gap s between the open end of the press-fit hole 11 and the proximal end of the press-fit body 20 was 60 μm.

圧入後の基材10の表面と圧入体20との基端面との間の段差hは、最大10μmであった。   The difference in height h between the surface of the base material 10 after press fitting and the base end face of the press-fit body 20 was 10 μm at maximum.

セラミックス溶射膜30の表面を目視で観察したところ、クラック、窪みなどの欠陥を発見することはできなかった。   When the surface of the ceramic sprayed film 30 was visually observed, it was not possible to find defects such as cracks and depressions.

(実施例4)
基材10は、アルミニウム合金(A6061)からなり、拡径穴部11bが直径Db2.614mmであること以外は、実施例2と同じとした。圧入体20は、実施例2と同じものを用いた。
(Example 4)
The base 10 was made of an aluminum alloy (A6061), and the same as Example 2 except that the diameter-expanded hole 11b had a diameter Db of 2.614 mm. As the press-fit body 20, the same one as in Example 2 was used.

被圧入穴11の開口端と圧入体20の基端との隙間sは、50μmであった。   The gap s between the open end of the press-fit hole 11 and the proximal end of the press-fit body 20 was 50 μm.

圧入後の基材10の表面と圧入体20との基端面との間の段差hは、最大15μmであった。   The difference in height h between the surface of the base material 10 after press fitting and the base end face of the press-fit body 20 was 15 μm at maximum.

セラミックス溶射膜30の表面を目視で観察したところ、クラック、窪みなどの欠陥を発見することはできなかった。   When the surface of the ceramic sprayed film 30 was visually observed, it was not possible to find defects such as cracks and depressions.

(実施例5)
圧入体20の素材がアルミナ焼結体であること以外は、実施例2と同じとした。
(Example 5)
The same as Example 2 except that the material of the press-fit body 20 is an alumina sintered body.

被圧入穴11の開口端と圧入体20の基端との隙間sは、18μmであった。   The gap s between the open end of the press-fit hole 11 and the proximal end of the press-fit body 20 was 18 μm.

圧入後の基材10の表面と圧入体20との基端面との間の段差hは、最大10μmであった。   The difference in height h between the surface of the base material 10 after press fitting and the base end face of the press-fit body 20 was 10 μm at maximum.

セラミックス溶射膜30の表面を目視で観察したところ、クラック、窪みなどの欠陥を発見することはできなかった。   When the surface of the ceramic sprayed film 30 was visually observed, it was not possible to find defects such as cracks and depressions.

(実施例6)
基材10は、アルミニウム合金(A6061)からなり、拡径穴部11bが直径Db2.525mmであること以外は、実施例2と同じとした。圧入体20は、実施例2と同じものを用いた。
(Example 6)
The base 10 was made of an aluminum alloy (A6061), and the same as Example 2 except that the diameter-increased hole 11b had a diameter Db of 2.525 mm. As the press-fit body 20, the same one as in Example 2 was used.

被圧入穴11の開口端と圧入体20の基端との隙間sは、5μmであった。   The clearance s between the open end of the press-fit hole 11 and the proximal end of the press-fit body 20 was 5 μm.

圧入後の基材10の表面と圧入体20との基端面との間の段差hは、最大5μmであった。   The difference in height h between the surface of the base material 10 after press fitting and the base end face of the press-fit body 20 was 5 μm at maximum.

セラミックス溶射膜30の表面を目視で観察したところ、クラック、窪みなどの欠陥を発見することはできなかった。   When the surface of the ceramic sprayed film 30 was visually observed, it was not possible to find defects such as cracks and depressions.

(実施例7)
基材10は、ステンレス鋼(SUS304)であること以外は、実施例2と同じとした。圧入体20は、実施例2と同じものを用いた。
(Example 7)
The base 10 is the same as that of Example 2 except that it is stainless steel (SUS304). As the press-fit body 20, the same one as in Example 2 was used.

被圧入穴11の開口端と圧入体20の基端との隙間sは、18μmであった。   The gap s between the open end of the press-fit hole 11 and the proximal end of the press-fit body 20 was 18 μm.

圧入後の基材10の表面と圧入体20との基端面との間の段差hは、最大30μmであった。   The difference in height h between the surface of the base material 10 after press fitting and the base end face of the press-fit body 20 was 30 μm at maximum.

セラミックス溶射膜30の表面を目視で観察したところ、クラック、窪みなどの欠陥を発見することはできなかった。   When the surface of the ceramic sprayed film 30 was visually observed, it was not possible to find defects such as cracks and depressions.

(実施例8)
基材10は、アルミニウム合金(A6061)からなり、各被圧入穴11は、被圧入穴部11aが直径Da3.9624mmで深さLa3.302mm、拡径穴部11bが直径Db4.028mmで深さLb1.778mm、縮径穴部11cが直径Dc3.505mmで深さLc15mmであった。被圧入穴部11aと拡径穴部11bとの間には段差を形成し、被圧入穴部11aと縮径穴部11cとの間には45度のテーパ面を形成した。
(Example 8)
The base 10 is made of an aluminum alloy (A6061), and each of the press-fit holes 11 has a diameter Da of 3.9624 mm and a depth of La 3.302 mm, and the diameter enlarged hole 11 b of a diameter Db of 4.028 mm. Lb 1.778 mm, diameter reduction hole 11 c had a diameter Dc of 3.505 mm and a depth Lc of 15 mm. A step was formed between the press-fit hole 11a and the enlarged diameter hole 11b, and a 45 ° tapered surface was formed between the press-fit hole 11a and the diameter reduced hole 11c.

圧入体20は、アルミナ多孔質体からなり、基部20aが直径da3.988mmで長さla3.0mm、拡径部20bは省略した。縮径部20cが直径dc3.0mmで長さlc8mmであった。基部20aと縮径部20cとの間にはそれぞれ段差を形成した。   The press-fit body 20 is made of an alumina porous body, and the base 20a has a diameter of da 3.988 mm, a length la of 3.0 mm, and the enlarged diameter portion 20b is omitted. The reduced diameter portion 20c had a diameter of dc 3.0 mm and a length lc of 8 mm. A step was formed between the base 20a and the reduced diameter portion 20c.

被圧入穴11の開口端と圧入体20の基端との隙間sは、20μmであった。   The gap s between the open end of the press-fit hole 11 and the proximal end of the press-fit body 20 was 20 μm.

圧入後の基材10の表面と圧入体20との基端面との間の段差hは、最大10μmであった。   The difference in height h between the surface of the base material 10 after press fitting and the base end face of the press-fit body 20 was 10 μm at maximum.

セラミックス溶射膜30の表面を目視で観察したところ、クラック、窪みなどの欠陥を発見することはできなかった。   When the surface of the ceramic sprayed film 30 was visually observed, it was not possible to find defects such as cracks and depressions.

(比較例1)
基材10は、アルミニウム合金(A6061)からなり、拡径穴部11bが直径Db2.5246mmであること以外は、実施例2と同じとした。圧入体20は、実施例2と同じものを用いた。
(Comparative example 1)
The base 10 was made of an aluminum alloy (A6061), and the same as Example 2 except that the diameter-increased hole 11b had a diameter Db of 2.5246 mm. As the press-fit body 20, the same one as in Example 2 was used.

被圧入穴11の開口端と圧入体20の基端との隙間sは、5μmであった。   The clearance s between the open end of the press-fit hole 11 and the proximal end of the press-fit body 20 was 5 μm.

圧入後の基材10の表面と圧入体20との基端面との間の段差hは、最大70μmであった。   The difference in height h between the surface of the base material 10 after press fitting and the base end face of the press-fit body 20 was 70 μm at maximum.

セラミックス溶射膜30の表面を目視で観察したところ、クラックが発生していた。   When the surface of the ceramic sprayed film 30 was visually observed, a crack was generated.

(比較例2)
基材10は、アルミニウム合金(A6061)からなり、拡径穴部11bが直径Db2.655mmであること以外は、実施例2と同じとした。圧入体20は、実施例2と同じものを用いた。
(Comparative example 2)
The base 10 is made of an aluminum alloy (A6061), and is the same as Example 2 except that the diameter-increased hole 11b has a diameter Db of 2.655 mm. As the press-fit body 20, the same one as in Example 2 was used.

被圧入穴11の開口端と圧入体20の基端との隙間sは、70μmであった。   The gap s between the open end of the press-fit hole 11 and the proximal end of the press-fit body 20 was 70 μm.

圧入後の基材10の表面と圧入体20との基端面との間の段差hは、最大30μmであった。   The difference in height h between the surface of the base material 10 after press fitting and the base end face of the press-fit body 20 was 30 μm at maximum.

セラミックス溶射膜30の表面を目視で観察したところ、クラックが発生していた。   When the surface of the ceramic sprayed film 30 was visually observed, a crack was generated.

10…基材、 11…被圧入穴、 11a…被圧入穴部、 11b…拡径穴部、 11c…縮径穴部、 11d…拡径穴部、 20…圧入体、 20a…基部、 20b…拡径部、 20c…縮径部、、 21…貫通孔、 22…凹部、 30…セラミックス溶射膜、 31…貫通孔下側端子、 100…静電チャック(基板支持装置)、 s…隙間。   DESCRIPTION OF SYMBOLS 10 ... Base material, 11 ... Press-fit hole 11a ... Press-fit hole part 11b ... Expansion-diameter hole part 11c ... Reduction-diameter hole part 11d ... Expansion-diameter hole part 20 ... Press-fit body, 20a ... Base, 20b ... 20c: A reduced diameter portion, 21: through hole, 22: recess, 30: ceramic sprayed film, 31: through hole lower terminal, 100: electrostatic chuck (substrate supporting device), s: gap.

Claims (4)

導電性材料からなる基材と、前記基材に形成された被圧入穴に圧入され、貫通孔を有し、絶縁性材料からなる圧入体と、前記被圧入穴に圧入された前記圧入体及び前記基材の面一の上面を覆うセラミックス溶射膜とを備えた基板支持装置であって、
前記被圧入穴は、開口端から連続的又は断続的に縮径しており、
前記圧入体は、前記被圧入穴に圧入された際に前記被圧入穴の縮径した周壁と圧接する部分と、前記部分より大径の部分を基端に有し、前記基材の表面と前記圧入体との基端面との段差は30μm以下であり、
前記被圧入穴の開口端と前記圧入体の基端との隙間は、5μm以上60μm以下であることを特徴とする基板支持装置。
A base made of a conductive material, a press-fit body press-fit into a press-fit hole formed in the base material, having a through hole and made of an insulating material, the press-fit body press-fit into the press-fit hole A substrate supporting apparatus comprising: a ceramic sprayed film covering a flush upper surface of the substrate;
The press-fit hole is continuously or intermittently reduced in diameter from the open end,
The press-fit body has, at its proximal end, a portion to be in pressure-contact with the diameter-reduced peripheral wall of the press-fit hole when pressed into the press-fit hole, and a portion larger in diameter than the portion. The step between the press-fit body and the base end surface is 30 μm or less,
The gap between the opening end of the press-fit hole and the base end of the press-fit body is 5 μm or more and 60 μm or less.
前記被圧入穴は、前記圧入体が前記被圧入穴に圧入された際に圧接する前記周壁の部分よりも奥側に、当該部分よりも縮径した部分を有し、前記圧入体は、前記被圧入穴に圧入された際に前記被圧入穴の周壁と圧接する部分より先端側に、前記被圧入穴の周壁との間に隙間を有する部分を有することを特徴とする請求項1に記載の基板支持装置。   The press-fit hole has a portion having a diameter smaller than that of the portion on the back side of the portion of the peripheral wall pressed against when the press-fit body is press-fit into the press-fit hole; A portion having a gap between the peripheral wall of the press-fit hole and the peripheral wall of the press-in hole is provided on the tip side of the portion of the pressure-fit hole that is in pressure contact with the peripheral wall of the press-fit hole Substrate support equipment. 導電性材料からなる基材に開口端から連続的又は断続的に縮径するように形成され被圧入穴に、貫通孔を有し、絶縁性材料からなる圧入体を圧入させて、前記圧入体を部分的に前記被圧入穴の縮径した周壁に圧接させ、前記基材の表面と前記圧入体との基端面との段差を30μm以下にする工程と、
前記基材の表面と前記圧入体との基端面との上にセラミックス粉末を溶射してセラミックス溶射膜を形成する工程とを備えたことを特徴とする基板支持装置の製造方法。
The press-fit body is formed by pressing a press-fit body, which has a through hole and is made of an insulating material, into a press-fit hole formed on a base material made of a conductive material so as to continuously or intermittently reduce the diameter from the open end. Partially pressing the peripheral wall of the press-in hole into which the diameter of the press-in hole is reduced, thereby setting the difference in level between the surface of the base and the base end face of the press-in body to 30 μm or less;
And a step of thermally spraying a ceramic powder on the surface of the base and the proximal end face of the press-fit body to form a ceramic sprayed film.
導電性材料からなる基材と、前記基材に形成された被圧入穴に圧入され、貫通孔を有し、絶縁性材料からなる圧入体と、前記被圧入穴に圧入された前記圧入体及び前記基材の面一の上面を覆うセラミックス溶射膜とを備えた基板支持装置であって、
前記被圧入穴は、開口端から連続的又は断続的に縮径しており、
前記圧入体は、前記被圧入穴に圧入された際に前記被圧入穴の縮径した周壁と圧接する部分を有し、前記基材の表面と前記圧入体との基端面との段差は30μm以下であることを特徴とする基板支持装置。
A base made of a conductive material, a press-fit body press-fit into a press-fit hole formed in the base material, having a through hole and made of an insulating material, the press-fit body press-fit into the press-fit hole A substrate supporting apparatus comprising: a ceramic sprayed film covering a flush upper surface of the substrate;
The press-fit hole is continuously or intermittently reduced in diameter from the open end,
The press-fit body has a portion to be in pressure contact with the diameter-reduced peripheral wall of the press-fit hole when pressed into the press-fit hole, and the step between the surface of the base and the base end face of the press-fit body is 30 μm A substrate support apparatus characterized by the following.
JP2016016704A 2016-01-29 2016-01-29 Substrate support apparatus and method of manufacturing the same Active JP6509139B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2016016704A JP6509139B2 (en) 2016-01-29 2016-01-29 Substrate support apparatus and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016016704A JP6509139B2 (en) 2016-01-29 2016-01-29 Substrate support apparatus and method of manufacturing the same

Publications (2)

Publication Number Publication Date
JP2017135351A JP2017135351A (en) 2017-08-03
JP6509139B2 true JP6509139B2 (en) 2019-05-08

Family

ID=59503036

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016016704A Active JP6509139B2 (en) 2016-01-29 2016-01-29 Substrate support apparatus and method of manufacturing the same

Country Status (1)

Country Link
JP (1) JP6509139B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210072114A (en) * 2018-11-01 2021-06-16 램 리써치 코포레이션 High power electrostatic chuck with features to prevent He hole light-up/arcing
JP7324230B2 (en) * 2018-12-14 2023-08-09 日本発條株式会社 plate with channels
US20230170241A1 (en) * 2021-11-29 2023-06-01 Applied Materials, Inc. Porous plug for electrostatic chuck gas delivery

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5644467A (en) * 1995-09-28 1997-07-01 Applied Materials, Inc. Method and structure for improving gas breakdown resistance and reducing the potential of arcing in a electrostatic chuck
US5720818A (en) * 1996-04-26 1998-02-24 Applied Materials, Inc. Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck
JP5331519B2 (en) * 2008-03-11 2013-10-30 日本碍子株式会社 Electrostatic chuck
JP5449750B2 (en) * 2008-11-19 2014-03-19 株式会社日本セラテック Electrostatic chuck and manufacturing method thereof
JP6017328B2 (en) * 2013-01-22 2016-10-26 東京エレクトロン株式会社 Mounting table and plasma processing apparatus

Also Published As

Publication number Publication date
JP2017135351A (en) 2017-08-03

Similar Documents

Publication Publication Date Title
CN110277341B (en) Electrostatic chuck
CN110277342B (en) Electrostatic chuck
JP5449750B2 (en) Electrostatic chuck and manufacturing method thereof
JP4476701B2 (en) Manufacturing method of sintered body with built-in electrode
TWI518841B (en) Electrostatic sucker
JP6509139B2 (en) Substrate support apparatus and method of manufacturing the same
JP6263484B2 (en) Electrostatic chuck and manufacturing method thereof
KR101364656B1 (en) Electrostatic chuck
JP4739039B2 (en) Electrostatic chuck device
JP4942364B2 (en) Electrostatic chuck, wafer holding member, and wafer processing method
CN111668150B (en) Electrostatic chuck and processing apparatus
JP3145664B2 (en) Wafer heating device
CN111128838B (en) Electrostatic chuck
CN110277343B (en) Electrostatic chuck
KR100450475B1 (en) Electrostatic chucks and process for producing the same
KR100212628B1 (en) Ceramic joint body and process for manufacturing the same
JP4326874B2 (en) Electrostatic chuck and manufacturing method thereof
JP6257540B2 (en) Electrostatic chuck and manufacturing method thereof
JP6069654B2 (en) Plasma processing stage for substrate to be processed and plasma processing apparatus using the same
JP2008244149A (en) Electrostatic chuck and manufacturing method thereof
CN111668151B (en) Electrostatic chuck and processing apparatus
CN111128837B (en) Electrostatic chuck
JP4658086B2 (en) Electrostatic chuck and manufacturing method thereof
JP2004262712A (en) Firing tool
JP2933508B2 (en) Plasma processing equipment

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180710

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190308

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190326

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190402

R150 Certificate of patent or registration of utility model

Ref document number: 6509139

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250