JP6098950B2 - 照明光学ユニット - Google Patents
照明光学ユニット Download PDFInfo
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- JP6098950B2 JP6098950B2 JP2014511820A JP2014511820A JP6098950B2 JP 6098950 B2 JP6098950 B2 JP 6098950B2 JP 2014511820 A JP2014511820 A JP 2014511820A JP 2014511820 A JP2014511820 A JP 2014511820A JP 6098950 B2 JP6098950 B2 JP 6098950B2
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- optical unit
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- illumination optical
- illumination
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- 238000005286 illumination Methods 0.000 title claims description 42
- 230000003287 optical effect Effects 0.000 title claims description 38
- 230000005855 radiation Effects 0.000 claims description 50
- 210000001747 pupil Anatomy 0.000 claims description 26
- 238000003384 imaging method Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 238000000926 separation method Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 description 7
- 238000006073 displacement reaction Methods 0.000 description 6
- 230000006978 adaptation Effects 0.000 description 4
- 238000009304 pastoral farming Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70158—Diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/02—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Microscoopes, Condenser (AREA)
- Lenses (AREA)
Description
24 開口部
25 フレーム
dmax 第1の領域の最大直径
Claims (7)
- EUV放射線源(3)から放出される放射線(14)を用いて結像光学ユニット(9)によって結像することができる物体視野(5)を照明するための照明光学ユニット(4)であって、
a.特定の形状の多数のファセットを有する瞳ファセットミラー(18)と、
b.入射EUV放射線(14)に対して透過性である第1の領域(24)と、入射EUV放射線(14)に対して不透過性である第2の領域(25)とを含み、該領域(24,25)が絞り平面を定め、かつ該領域(24,25)の少なくとも一方が該絞り平面に離散対称群を有する絞り(23)と、
を含み、
c.前記絞り(23)は、前記EUV放射線源(3)の中間焦点面(16)の領域に配置され、
d.前記絞り(23)の前記領域(24,25)の少なくとも一方のアスペクト比が、前記瞳ファセットミラー(18)の前記ファセットの前記形状のアスペクト比に対応する、
ことを特徴とする照明光学ユニット(4)。 - 前記絞り(23)の前記領域(24,25)の少なくとも一方が、矩形方式に具現化されることを特徴とする請求項1に記載の照明光学ユニット(4)。
- 前記絞り(23)の前記第1の領域(24)は、前記第2の領域(25)によって周囲的に完全に囲まれることを特徴とする請求項1から請求項2のいずれか1項に記載の照明光学ユニット(4)。
- EUV放射線源(3)から放出された放射線(14)を用いて結像光学ユニット(9)によって結像することができる物体視野(5)を照明するための照明系(2)であって、
a.光源ユニット(26)と、
b.請求項1から請求項3のいずれか1項に記載の照明光学ユニット(4)と、
を含み、
c.絞り(23)が、前記EUV放射線源(3)の中間焦点面(16)の領域に配置される、
ことを特徴とする照明系(2)。 - 真空分離が、前記光源ユニット(26)と前記照明光学ユニット(4)の間に与えられ、前記絞り(23)は、該光源ユニット(26)と該照明光学ユニット(4)の間の境界に配置されることを特徴とする請求項4に記載の照明系(2)。
- a.請求項4又は請求項5に記載の照明系(2)と、
b.物体視野(5)を像視野(10)内に結像するための結像光学ユニット(9)と、
を含むことを特徴とするEUV投影露光装置(1)。 - 微細又はナノ構造化構成要素を生成する方法であって、
a.請求項6に記載のEUV投影露光装置(1)を与える段階と、
b.レチクル(7)を与える段階と、
c.感光コーティングを有するウェーハ(12)を与える段階と、
d.前記EUV投影露光装置(1)を用いて前記レチクル(7)の少なくとも1つの区画を前記ウェーハ(12)上に投影する段階と、
e.前記ウェーハ(12)上の前記露光された感光コーティングを現像する段階と、
を含むことを特徴とする方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161488901P | 2011-05-23 | 2011-05-23 | |
DE102011076297A DE102011076297A1 (de) | 2011-05-23 | 2011-05-23 | Blende |
DE102011076297.3 | 2011-05-23 | ||
US61/488,901 | 2011-05-23 | ||
PCT/EP2012/059173 WO2012159968A2 (en) | 2011-05-23 | 2012-05-16 | Illumination optical unit |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014516209A JP2014516209A (ja) | 2014-07-07 |
JP6098950B2 true JP6098950B2 (ja) | 2017-03-22 |
Family
ID=47140135
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014511820A Active JP6098950B2 (ja) | 2011-05-23 | 2012-05-16 | 照明光学ユニット |
Country Status (5)
Country | Link |
---|---|
US (1) | US9632422B2 (ja) |
JP (1) | JP6098950B2 (ja) |
CN (2) | CN103548095B (ja) |
DE (1) | DE102011076297A1 (ja) |
WO (1) | WO2012159968A2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012212453A1 (de) | 2012-07-17 | 2014-01-23 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik |
CN104505443B (zh) * | 2014-12-26 | 2017-12-05 | 聚灿光电科技股份有限公司 | 一种GaN基LED外延结构及其制备方法 |
CN109521634B (zh) * | 2017-09-20 | 2020-12-08 | 中强光电股份有限公司 | 投影装置与投影系统 |
DE102020212229B3 (de) | 2020-09-29 | 2022-01-20 | Carl Zeiss Smt Gmbh | Blenden-Vorrichtung zur Begrenzung eines Strahlengangs zwischen einer Lichtquelle und einer Beleuchtungsoptik einer Projektionsbelichtungsanlage für die Projektionslithographie |
CN116615808A (zh) * | 2020-11-16 | 2023-08-18 | 苏州晶湛半导体有限公司 | 多量子阱结构、发光二极管和发光组件 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4238390B2 (ja) | 1998-02-27 | 2009-03-18 | 株式会社ニコン | 照明装置、該照明装置を備えた露光装置および該露光装置を用いて半導体デバイスを製造する方法 |
US6859515B2 (en) | 1998-05-05 | 2005-02-22 | Carl-Zeiss-Stiftung Trading | Illumination system, particularly for EUV lithography |
US7248667B2 (en) | 1999-05-04 | 2007-07-24 | Carl Zeiss Smt Ag | Illumination system with a grating element |
JP2001338868A (ja) | 2000-03-24 | 2001-12-07 | Nikon Corp | 照度計測装置及び露光装置 |
US7170587B2 (en) * | 2002-03-18 | 2007-01-30 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1565769A1 (en) * | 2002-11-21 | 2005-08-24 | Carl Zeiss SMT AG | Projection lens with non- round diaphragm for microlithography |
US7113261B2 (en) * | 2004-06-08 | 2006-09-26 | Asml Netherlands B.V. | Radiation system, lithographic apparatus, device manufacturing method and device manufactured thereby |
US7274434B2 (en) * | 2004-11-24 | 2007-09-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4990287B2 (ja) * | 2005-10-18 | 2012-08-01 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 波長が193nm以下の照明システム用集光器 |
DE102006039760A1 (de) * | 2006-08-24 | 2008-03-13 | Carl Zeiss Smt Ag | Beleuchtungssystem mit einem Detektor zur Aufnahme einer Lichtintensität |
WO2009061192A1 (en) * | 2007-11-08 | 2009-05-14 | Asml Netherlands B.V. | Radiation system and method, and a spectral purity filter |
DE102008013229B4 (de) * | 2007-12-11 | 2015-04-09 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Mikrolithographie |
EP2243047B1 (en) * | 2008-02-15 | 2021-03-31 | Carl Zeiss SMT GmbH | Facet mirror for use in a projection exposure apparatus for microlithography |
NL2003157A1 (nl) * | 2008-07-11 | 2010-01-12 | Asml Netherlands Bv | Radiation source, lithographic apparatus, and device manufacturing method. |
DE102009047180A1 (de) * | 2009-11-26 | 2010-12-16 | Carl Zeiss Smt Ag | Facettenspiegel, Beleuchtungssystem und Projektionsbelichtungsanlage |
-
2011
- 2011-05-23 DE DE102011076297A patent/DE102011076297A1/de not_active Withdrawn
-
2012
- 2012-05-16 CN CN201280025144.1A patent/CN103548095B/zh active Active
- 2012-05-16 CN CN201710504412.2A patent/CN107239005B/zh active Active
- 2012-05-16 WO PCT/EP2012/059173 patent/WO2012159968A2/en active Application Filing
- 2012-05-16 JP JP2014511820A patent/JP6098950B2/ja active Active
-
2013
- 2013-10-10 US US14/050,560 patent/US9632422B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
DE102011076297A1 (de) | 2012-11-29 |
CN103548095A (zh) | 2014-01-29 |
US20140036247A1 (en) | 2014-02-06 |
WO2012159968A2 (en) | 2012-11-29 |
CN107239005A (zh) | 2017-10-10 |
CN107239005B (zh) | 2019-05-03 |
JP2014516209A (ja) | 2014-07-07 |
US9632422B2 (en) | 2017-04-25 |
WO2012159968A3 (en) | 2013-01-17 |
CN103548095B (zh) | 2017-07-21 |
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