JP5915835B2 - Lead frame with reflecting member for optical semiconductor device, lead frame for optical semiconductor device, lead frame substrate for optical semiconductor device, optical semiconductor device, method for manufacturing lead frame with reflecting member for optical semiconductor device, and optical semiconductor device Production method - Google Patents

Description

  The present invention relates to a lead frame with a reflecting member for an optical semiconductor device on which an optical semiconductor element such as an LED is mounted, a lead frame for an optical semiconductor device, a lead frame substrate for an optical semiconductor device, an optical semiconductor device, and a reflection for an optical semiconductor device. The present invention relates to a method for manufacturing a lead frame with members and a method for manufacturing an optical semiconductor device.

  2. Description of the Related Art Conventionally, lighting devices that use LED (light emitting diode) elements as light sources are used in various home appliances, OA equipment, display lights for vehicle equipment, general lighting, in-vehicle lighting, displays, and the like. Some of such lighting devices include an optical semiconductor device having a lead frame having terminal portions (electrodes) insulated from each other and an LED element.

  As such an optical semiconductor device, for example, Patent Document 1 discloses a PLCC (Plastic leaded chip carrier) type optical semiconductor device. In Patent Document 1, a PLCC type optical semiconductor device has a structure that holds a lead frame and a dome-shaped capsule material that seals an LED element.

Here, in the optical semiconductor device as described above, it is necessary to provide a reflector in order to extract light efficiently. In an optical semiconductor device, when a metal substrate or a lead frame is used, the reflector is generally formed of a resin.
However, the reflector made of resin does not have sufficient reflectivity, and a decrease in reflectivity due to resin deterioration becomes a problem. Moreover, the characteristic which radiates the heat generated by the light emission of the LED element is not sufficient.

Therefore, it has been proposed that the reflector is made of metal for the purpose of improving the reflectance and heat dissipation characteristics (Patent Documents 2 to 4).
However, in order to use a metal reflector for a metal lead frame, it is necessary to ensure insulation between the two.

  For example, in Patent Document 2, an optical semiconductor device that fixes a metal reflector to a metal lead frame via an insulating adhesive layer, or a metal oxide film (alumite) is formed on the surface of a metal reflector (aluminum) to conduct electricity. An optical semiconductor device that fixes a metal reflector to a metal lead frame via a conductive adhesive layer is described.

  Further, Patent Document 3 describes an optical semiconductor device that secures insulation from a metal lead frame by forming a step by partially removing the bottom of a metal reflector and forming an insulating layer at the step. Has been.

  Patent Document 4 describes an optical semiconductor device in which a metal reflector and a die pad are integrally formed, and lead portions (electrode portions) are fixed via an insulating adhesive layer.

JP 2007-49167 A JP 2009-283653 A JP 2009-283654 A JP 2010-21426 A

However, generally, the insulating adhesive layer is made of an epoxy resin, an acrylic resin, or the like, and has a low thermal conductivity.
Therefore, as described above, in the structure in which the metal reflector is fixed to the metal lead frame through the insulating adhesive layer, it is difficult to efficiently transfer the heat from the LED element from the metal lead frame to the metal reflector. Along with this, it becomes difficult to dissipate heat from the LED element from the metal reflector, so it is difficult to improve the heat dissipation characteristics.

  On the other hand, a metal oxide film such as anodized generally has a lower reflectance than that of the metal before being oxidized. Therefore, when the surface of the metal reflector is anodized, even if insulation can be secured, the reflectance of light Will fall.

  Moreover, in order to ensure insulation, in the method of removing a part of the bottom of the metal reflector to form a step, light is not reflected from the removed portion, so that the reflection efficiency is lowered.

  Further, in the method of integrating the metal reflector and the die pad, the structure becomes complicated, and it is difficult to manufacture such an optical semiconductor device, and the productivity is lowered.

  The present invention has been made in view of the above circumstances. For example, even when a metal reflector and a lead frame are used, insulation between the reflector and the lead portion (electrode portion) of the lead frame is ensured. However, a lead frame with a reflecting member for an optical semiconductor device having high reflectivity and excellent heat dissipation, a lead frame for an optical semiconductor device, a lead frame substrate for an optical semiconductor device, an optical semiconductor device, and a reflecting member for an optical semiconductor device It is an object of the present invention to provide a lead frame manufacturing method and an optical semiconductor device manufacturing method.

  As a result of various researches, the present inventor has made the lead part (electrode part) of the metal lead frame a step structure, and by filling the step with an insulating resin, the insulating property with the metal reflector is ensured. The present invention has been completed by finding that the above-mentioned problems can be solved by fixing the die pad portion (element placement portion) of the frame and the metal reflector by pressure bonding.

That is, the invention according to claim 1 of the present invention includes a first member that is made of a metal material and has a frame-like structure in which the opening side surface is inclined so that the top opening is larger than the bottom opening. The second member is made of a metal material and is fixed to a part of the bottom surface of the frame-like structure of the first member, and is made of a metal material and is thinner than the connection portion and the connection portion. A step structure comprising a thin portion, and in plan view, the connecting portion is disposed in an opening on the bottom side of the first member, and the thin portion is below the bottom surface of the frame-like structure of the first member. A thin member of the third member and a frame shape of the first member so that the insulating resin is insulated from the third member and the first member. The first member is interposed between the bottom surface of the structure and the third member and the second member are insulated from each other. The surface of the second member that is interposed between the member and the second member, has no step on the bottom surface of the frame-like structure of the first member, and corresponds to the bottom surface of the frame-like structure of the first member Is a flat frame, and the bottom surface of the frame-like structure of the first member and the surface of the second member corresponding to the bottom surface are directly fixed to each other. It is.

  In the invention according to claim 2 of the present invention, the plating member containing silver is formed on the opening side surface of the first member. Lead frame.

  In the invention according to claim 3 of the present invention, a plating film containing silver is formed on the first member side surface of the second member and the first member side surface of the connection portion of the third member. The lead frame with a reflecting member for an optical semiconductor device according to claim 1, wherein the lead frame is formed.

  According to a fourth aspect of the present invention, there is provided a plurality of either the second member or the third member or a plurality of both of the second member or the third member for one first member. A lead frame with a reflecting member for an optical semiconductor device according to any one of claims 1 to 3.

  An invention according to claim 5 of the present invention is a lead frame for an optical semiconductor device used for a lead frame with a reflecting member for an optical semiconductor device according to any one of claims 1 to 4, An optical semiconductor device lead frame comprising the second member and the third member.

  According to a sixth aspect of the present invention, there is provided the optical semiconductor device lead frame according to the fifth aspect, between the second member and the third member, and on the thin portion of the third member. And a resin-coated lead frame for an optical semiconductor device.

  According to a seventh aspect of the present invention, there is provided a lead frame substrate for an optical semiconductor device used for manufacturing a lead frame with a reflecting member for an optical semiconductor device according to any one of the first to fourth aspects. A plurality of sets of the second member and the third member corresponding to the first member are multifaceted on a plane, and the second member and the third member are multifaceted. The lead frame substrate for an optical semiconductor device has an outer frame portion that holds the second member and the third member on the outermost periphery.

  According to an eighth aspect of the present invention, there is provided the lead frame substrate for an optical semiconductor device according to the seventh aspect, between the second member and the third member, and a thin portion of the third member. And an insulating resin formed on the lead frame substrate for an optical semiconductor device with a resin.

  According to a ninth aspect of the present invention, there is provided a lead frame with a reflecting member for an optical semiconductor device according to any one of the first to fourth aspects, and the first member side of the second member. An optical semiconductor device comprising: an optical semiconductor element placed on a surface; and a translucent resin that seals the optical semiconductor element and transmits light emitted from the optical semiconductor element.

The invention according to claim 10 of the present invention comprises a first member that is made of a metal material and has a frame-like structure in which the opening side surface is inclined so that the top side opening is larger than the bottom side opening. The second member is made of a metal material and is fixed to a part of the bottom surface of the frame-like structure of the first member, and is made of a metal material and is thinner than the connection portion and the connection portion. A step structure comprising a thin portion, and in plan view, the connecting portion is disposed in an opening on the bottom side of the first member, and the thin portion is below the bottom surface of the frame-like structure of the first member. A thin member of the third member and a frame shape of the first member so that the insulating resin is insulated from the third member and the first member. The third member is interposed between the bottom surface of the structure and the third member and the second member are insulated from each other. Interposed between the and the wood second member, the surface of the the bottom surface of the frame-like structure of the first member without a step, the second member corresponding to the bottom surface of the frame-like structure of the first member Is a method for producing a lead frame with a reflecting member for an optical semiconductor device , wherein the bottom surface of the frame-like structure of the first member and the surface of the second member corresponding to the bottom surface are fixed by pressure bonding. A step of forming a first substrate on which a plurality of the first members are provided on a plane, and a plurality of sets of the second member and the third member corresponding to the first member on the plane. A step of forming a multi-sided second substrate, a step between the second member and the third member of the second substrate, and a connecting portion and a thin portion of the third member are filled. Forming the insulating resin on the substrate and before forming the insulating resin with the first substrate. Aligning the second substrate, a part of each bottom surface of the plurality of first members of the first substrate, and a surface on the first member side of each second member of the second substrate; crimp the a multi-ordered method for fabricating a lead with an optical semiconductor device for reflecting member frame, characterized in that it comprises a step of forming the optical semiconductor device for reflecting member with the lead frame.

  According to an eleventh aspect of the present invention, there is provided the lead frame with a reflecting member for an optical semiconductor device, which is provided by the method for manufacturing a lead frame with a reflecting member for an optical semiconductor device according to the tenth aspect. The step of placing the optical semiconductor element on the surface of the second member on the side of the first member, the opening of the first member is filled with the translucent resin, and the optical semiconductor element is sealed to be multifaceted A method for manufacturing an optical semiconductor device comprising: a step of obtaining an optical semiconductor device; and a step of obtaining individual optical semiconductor devices by dividing the multifaceted optical semiconductor devices into individual pieces.

  Since it has the above-described configuration, according to the present invention, it is possible to ensure insulation between the reflector and the lead portion of the lead frame, have high reflectivity, and have excellent heat dissipation. A frame, a lead frame for an optical semiconductor device, a lead frame substrate for an optical semiconductor device, and an optical semiconductor device can be obtained.

It is explanatory drawing which shows an example of the lead frame with a reflection member for optical semiconductor devices which concerns on this invention, (a) is a top view, (b) is AA sectional drawing of (a). It is a perspective view explaining the structure of an example of the lead frame with a reflection member for optical semiconductor devices which concerns on this invention. It is a perspective view which shows the structural member of the other example of the lead frame with a reflection member for optical semiconductor devices which concerns on this invention. It is a perspective view explaining the structure of an example of the lead frame for optical semiconductor devices which concerns on this invention. It is a perspective view explaining the structure of an example of the lead frame for optical semiconductor devices with a resin concerning this invention. It is explanatory drawing which shows an example of the lead frame board | substrate for optical semiconductor devices which concerns on this invention. It is explanatory drawing which shows an example of the lead frame board | substrate for optical semiconductor devices with a resin concerning this invention. It is explanatory drawing which shows an example of the optical semiconductor device which concerns on this invention, (a) is a top view, (b) is BB sectional drawing of (a). It is explanatory drawing which shows the 1st board | substrate in the manufacturing process of an example of the lead frame with the reflection member for optical semiconductor devices which concerns on this invention. It is explanatory drawing which shows the 2nd board | substrate in the manufacturing process of an example of the lead frame with a reflection member for optical semiconductor devices which concerns on this invention, (a) shows the state before resin formation, (b) is after resin formation. Indicates the state. It is explanatory drawing which shows the state which crimped | bonded the 1st board | substrate and the 2nd board | substrate after resin formation in the manufacturing process of an example of the lead frame with a reflection member for optical semiconductor devices which concerns on this invention. It is a typical process figure showing an example of a manufacturing method of a lead frame with a reflection member for optical semiconductor devices concerning the present invention. It is a typical process figure showing an example of a manufacturing method of an optical semiconductor device concerning the present invention. It is explanatory drawing which shows the state which mounted the optical semiconductor element in the manufacturing process of an example of the optical semiconductor device which concerns on this invention.

  Hereinafter, a lead frame with a reflecting member for an optical semiconductor device, a lead frame for an optical semiconductor device, a lead frame substrate for an optical semiconductor device, an optical semiconductor device, and a method for manufacturing a lead frame with a reflecting member for an optical semiconductor device according to the present invention, and The method for manufacturing the optical semiconductor device will be described in detail.

[Lead frame with reflecting member for optical semiconductor devices]
First, the lead frame with a reflecting member for an optical semiconductor device of the present invention will be described.
1A and 1B are explanatory views showing an example of a lead frame with a reflecting member for an optical semiconductor device according to the present invention, wherein FIG. 1A is a plan view, and FIG. 1B is a cross-sectional view taken along line AA in FIG. FIG. 2 is a perspective view illustrating the configuration of an example of a lead frame with a reflecting member for an optical semiconductor device according to the present invention.

  As shown in FIG. 1 or FIG. 2, the lead frame 1 with a reflecting member for an optical semiconductor device according to the present invention includes a first member 11, a second member 12, and a third member 13 made of a metal material. The insulating resin 14 is provided so that the third member 13 and the first member 11 are insulated and the third member 13 and the second member 12 are insulated.

Here, the first member 11 has a frame-like structure in which the opening side surface 11a is inclined so that the opening on the top side is larger than the opening on the bottom side.
The second member 12 is fixed to a part of the bottom surface of the frame-like structure of the first member.
Here, as a method of fixing the second member 12 to a part of the bottom surface of the frame-like structure of the first member, there is a method of pressure-bonding the second member 12 and the first member. Note that the term “pressure bonding” refers to fixing a certain object to another object by applying physical pressure.
The third member 13 includes a connecting portion 13A and a thin portion 13B having a thickness smaller than that of the connecting portion 13A, and the connecting portion 13A is an opening on the bottom side of the first member 11 in plan view. The thin portion 13B is disposed at least partially under the bottom surface of the frame-like structure of the first member 11.
Then, the insulating resin 14 is disposed between the thin portion of the third member 13 and the bottom surface of the frame-like structure of the first member 11 so that the third member 13 and the first member 11 are insulated. In addition, the third member 13 and the second member 12 are interposed so that the third member 13 and the second member 12 are insulated.

The 1st member 11 functions as a reflector, and is comprised from the metal material which is a material provided with light reflectivity and heat dissipation.
The second member 12 mainly functions as a die pad portion (element placement portion) of the lead frame, and the third member 13 mainly functions as a lead portion (electrode portion) of the lead frame. is there. The 2nd member 12 and the 3rd member 13 are comprised from the metal material which is a material provided with light reflectivity, heat dissipation, and electroconductivity.

  Examples of the material of the first member 11, the second member 12, and the third member 13 described above include metal materials, preferably copper (Cu), copper alloy, 42 alloy (Ni 40.5% to 43% Fe alloy).

Moreover, it is preferable that a plating film containing silver (Ag) is formed on the opening side surface 11a of the first member 11, the surface of the second member 12 on the first member side, and the third member It is preferable that a plating film containing silver is also formed on the upper surface of the 13 connection portions. This is because the light from the optical semiconductor element can be reflected more efficiently.
Here, in the 1st member 11, although the above-mentioned effect is produced if the plating film containing silver is formed in the opening side surface 11a, the plating film containing silver is applied to the entire surface of the first member 11. It may be formed.
Further, in the second member 12, if the plating film containing silver is formed on the surface on the first member 11 side and corresponding to the opening on the bottom side of the first member, the above-described case is achieved. Although having an effect, the plating film containing silver may be formed on the entire surface of the second member 12.
Similarly, in the third member 13, the above-described effect can be achieved as long as the plating film containing silver is formed on the upper surface of the connection portion. It may be formed on the entire surface.

The insulating resin 14 is a resin having an insulating property, and for example, a thermoplastic resin or a thermosetting resin used in a reflector of a conventional optical semiconductor device can be used.
For example, as the thermoplastic resin, polyamide, polyphthalamide, polyphenylene sulfide, liquid crystal polymer, polyether sulfone, polybutylene terephthalate, or the like can be used.
As the thermosetting resin, silicone, epoxy, polyetherimide, polyurethane, polybutylene acrylate, or the like can be used.
Furthermore, it is also possible to increase the light reflectance by adding any of titanium dioxide, zirconium dioxide, potassium titanate, aluminum nitride and boron nitride as a light reflecting agent in these resins. .

  Since it has the above-described configuration, the lead frame with a reflecting member for an optical semiconductor device of the present invention ensures insulation between the reflector (first member) and the lead portion (third member) of the lead frame, It has high reflectivity and excellent heat dissipation.

  More specifically, in the present invention, an optical semiconductor device having a high reflectivity is obtained by using, as a reflector, a first member having a frame-like structure made of a material having light reflectivity and heat dissipation, such as a metal material. It can be set as a lead frame with a reflective member for use.

  Further, in the present invention, unlike the lead frame described in the above-mentioned Patent Document 3 in which a step is formed by partially removing the bottom of the metal reflector to ensure insulation, it corresponds to a reflector. Since there is no step on the bottom surface of the first member and the opening side surface is formed up to the element mounting surface of the second member, light from the optical semiconductor element can be efficiently reflected.

  In the present invention, since the second member that mainly functions as the die pad portion of the lead frame is fixed to the first member that functions as the reflector, the optical semiconductor element mounted on the second member Since heat can be efficiently transferred from the second member to the first member and can be efficiently radiated from the first member, the lead frame with a reflecting member for an optical semiconductor device excellent in heat dissipation can be obtained. be able to.

On the other hand, the third member functioning mainly as the lead part (electrode part) of the lead frame will be described. First, as shown in FIG. 1, the connection part 13A has an opening on the bottom side of the first member 11 in plan view. Since it is disposed inside, it is in a non-contact relationship with the first member 11, that is, an insulated relationship, and the thin portion 13 </ b> B is an insulating resin between the bottom surface of the frame-like structure of the first member 11. Since 14 is interposed, the first member 11 is insulated.
Therefore, the third member 13 is insulated from the first member 11. For example, the third member 13 and the second member 12 are not short-circuited via the first member 11.
In addition, since the insulating resin 14 is interposed between the third member 13 and the second member 12, the third member 13 and the second member 12 do not short-circuit due to direct contact.
That is, the third member 13 in the present invention ensures insulation with respect to the first member 11 and the second member 12.

  Further, in the present invention, the insulation formed between a part of the bottom surface of the frame-like structure of the first member 11 and the thin portion 13B of the third member 13 and the bottom surface of the frame-like structure of the first member 11. It is good also as a structure joined with the adhesive resin 14 through the contact bonding layer.

  With such a configuration, the bonding between the first member 11 and the insulating resin 14 is performed by the adhesive layer. Therefore, the insulating resin 14 is not required to have bonding characteristics. In selecting a material, the degree of freedom increases. For example, a material having higher light reflection characteristics can be selected as the material of the insulating resin 14.

  1 and FIG. 2, an example of a lead frame with a reflecting member for an optical semiconductor device having one second member 12 and one third member 13 with respect to one first member 11. However, in the present invention, a plurality of either the second member or the third member is provided for one first member, depending on the number and type of optical semiconductor elements to be mounted. The form which has multiple pieces or both of them may be sufficient.

  FIG. 3 is a perspective view showing components of another example of a lead frame with a reflecting member for an optical semiconductor device according to the present invention. In order to avoid complication, in FIG. 3, the first member 11 and the insulating resin 14 in FIG. 2 are not shown, and only the second member and the third member are illustrated.

For example, as shown in FIG. 3 (a) or FIG. 3 (b), in the present invention, one second member and two third members are provided for one first member. Also good.
Here, in the example shown in FIG. 3A, two third members 13a and 13b are arranged to face one side surface of one second member 12a, and FIG. In the example shown, two third members 13c and 13d are arranged so as to sandwich one second member 12b from both sides.

  Similarly, in the present invention, one second member and one third member may be provided for one first member. For example, in the example shown in FIG. 3B, one third member 13e is disposed between the two second members 12c and 12d.

  In addition, said embodiment is an illustration and this invention is not limited to said embodiment. What has substantially the same configuration as the technical idea described in the claims of the present invention and exhibits the same operational effects is included in the technical scope of the present invention in any case. The

[Lead frame for optical semiconductor devices]
Next, the lead frame for optical semiconductor devices of the present invention will be described.
FIG. 4 is a perspective view illustrating the configuration of an example of the lead frame for an optical semiconductor device according to the present invention.
As shown in FIG. 4, an optical semiconductor device lead frame 2 according to the present invention is an optical semiconductor device lead frame used in the above-described lead frame with a reflecting member for an optical semiconductor device, and includes a second member 12; The third member 13 is included.
The second member 12 and the third member 13 are the same as those described in the above-described lead frame with a reflecting member for an optical semiconductor device, and therefore detailed description thereof is omitted here.
The lead frame for an optical semiconductor device of the present invention may be composed of the second member and the third member shown in FIG.

[Lead frames for optical semiconductor devices with resin]
Next, the lead frame for an optical semiconductor device with resin of the present invention will be described.
FIG. 5 is a perspective view illustrating the configuration of an example of a lead frame for an optical semiconductor device with a resin according to the present invention.
As shown in FIG. 5, the lead frame 3 for an optical semiconductor device with a resin according to the present invention includes the above-described lead frame 2 for an optical semiconductor device, the second member 12, the third member 13, and the third And an insulating resin 14 formed on the thin portion 13B of the member 13.
Since the second member 12, the third member 13, and the insulating resin 14 are the same as those described in the above-described lead frame with a reflecting member for an optical semiconductor device, detailed description thereof is omitted here.

[Lead frame substrate for optical semiconductor devices]
Next, the lead frame substrate for optical semiconductor devices of the present invention will be described.
FIG. 6 is an explanatory view showing an example of a lead frame substrate for an optical semiconductor device according to the present invention.
As shown in FIG. 6, an optical semiconductor device lead frame substrate 4 according to the present invention is an optical semiconductor device lead frame substrate used for manufacturing the above-described lead frame with a reflecting member for an optical semiconductor device. A set of the second member 12 and the third member 13 corresponding to one member 11 is multifaceted on a plane, and the second member 12 and the third member 13 are multifaceted. On the outermost periphery, there is an outer frame portion 41 that holds the second member 12 and the third member 13.
The outer periphery of one set of the second member 12 and the third member 13 is a dicing line 42, and the other set of the second member and the third member adjacent to the set of the second member and the third member is By being separated by the dicing line 42, individual lead frames for optical semiconductor devices are obtained.
The second member 12 and the third member 13 are the same as those described in the above-described lead frame with a reflecting member for an optical semiconductor device, and therefore detailed description thereof is omitted here.

[Lead frame substrate for optical semiconductor devices with resin]
Next, the lead frame substrate for an optical semiconductor device with resin of the present invention will be described.
FIG. 7 is an explanatory view showing an example of a lead frame substrate for an optical semiconductor device with a resin according to the present invention.
As shown in FIG. 7, the lead frame substrate 5 for an optical semiconductor device with a resin according to the present invention includes the above-described lead frame substrate for an optical semiconductor device, the second member 12 and the third member 13, and And an insulating resin 14 formed on the thin portion 13B of the third member 13.
Similarly to the above-described lead frame substrate for an optical semiconductor device, also in this lead frame substrate for an optical semiconductor device with resin 5, the outer periphery of the pair of the second member 12 and the third member 13 is a dicing line 42. The other pair of the second member and the third member adjacent to the pair of the second member and the third member are separated by the dicing line 42, so that each lead frame for an optical semiconductor device with resin can be separated from Become.
Since the second member 12, the third member 13, and the insulating resin 14 are the same as those described in the above-described lead frame with a reflecting member for an optical semiconductor device, detailed description thereof is omitted here.

[Optical semiconductor device]
Next, the optical semiconductor device of the present invention will be described.
8A and 8B are explanatory views showing an example of the optical semiconductor device according to the present invention, in which FIG. 8A is a plan view and FIG.

  As shown in FIG. 8, the optical semiconductor device 20 according to the present invention includes the above-described lead frame with a reflecting member for an optical semiconductor device according to the present invention and the second member in the opening on the bottom side of the first member 11. 12 is provided with an optical semiconductor element 21 placed on the upper surface of 12 and a translucent resin 24 that seals the optical semiconductor element 21 and transmits light emitted from the optical semiconductor element 21.

  In the optical semiconductor device according to the present invention, since the above-described lead frame for an optical semiconductor device according to the present invention is used as a lead frame, reflection is achieved while ensuring insulation between the reflector and the lead portion of the lead frame. An optical semiconductor device having a high rate and excellent heat dissipation can be obtained.

  As the above-described optical semiconductor element, for example, a conventionally used LED element can be used. Here, in the LED element, for example, by appropriately selecting a material made of a compound semiconductor single crystal such as GaP, GaAs, GaAlAs, GaAsP, and AlInGaP or various GaN-based compound semiconductor single crystals such as InGaN as the light emitting layer, An emission wavelength ranging from ultraviolet light to infrared light can be selected.

As a mounting form of the optical semiconductor element, for example, as shown in FIG. 8, one optical semiconductor element 21 is mounted on the upper surface of one second member 13, and two bonding wires 22 are used to There is a form in which the second member 13 and the third member 14 are connected.
Although not shown, the optical semiconductor element is placed so as to straddle the second member and the third member, and instead of the bonding wire, the second is formed by solder, an adhesive having conductivity and heat conductivity, or the like. There is also a form (Flip Chip Package) connected to the member and the third member.

  When the lead frame shown in FIG. 3 (a) or FIG. 3 (b) is used, two optical semiconductor elements are placed on the upper surface of one second member 12a or 12b, and are bonded by bonding wires. The second member and two third members 13a and 13b, or 13c and 13d may be connected.

  Further, when the lead frame shown in FIG. 3C is used, one optical semiconductor element is mounted on the upper surface of each of the two second members 12c and 12d, and two second semiconductor elements are bonded by bonding wires. The form connected to member 12c, 12d and the one 3rd member 13e is mentioned.

  Note that the optical semiconductor element 21 is generally fixedly mounted by solder or an adhesive 23 having heat conductivity. Here, when a die bonding paste is used instead of solder, it is possible to select a die bonding paste made of a light-resistant epoxy resin or silicone resin.

The bonding wire 22 is made of a material having good conductivity such as gold (Au), for example, and the optical semiconductor element 21 and the second member are connected by one bonding wire 22, and the optical semiconductor is connected by another bonding wire 22. The element 21 and the third member are connected.
Note that, as described above, the connection between the optical semiconductor element and the second member and the third member is performed using solder, a conductive adhesive, or the like instead of the bonding wire. There is also a method of connecting to a member.
Further, the terminal of the optical semiconductor element is formed using the second member using ACF (anisotropic conductive film), ACP (anisotropic conductive paste), NCF (nonconductive film), NCP (nonconductive paste), or the like. There is also a method of directly connecting to the terminal portion of the third member.

Next, the translucent resin will be described.
As the translucent resin according to the present invention, it is desirable to select a material having a high light transmittance and a high refractive index at the emission wavelength of the optical semiconductor element in order to improve the light extraction efficiency. For example, an epoxy resin or a silicone resin can be selected as a resin that satisfies the characteristics of high heat resistance, weather resistance, and mechanical strength. In particular, when a high-brightness LED is used as the optical semiconductor element, the translucent resin is exposed to strong light, and therefore, the translucent resin is preferably made of a silicone resin having high weather resistance.

  The members constituting the lead frame with a reflecting member for an optical semiconductor device, such as the first member 11, are the same as those described in the above-described lead frame with a reflecting member for an optical semiconductor device. The description is omitted.

[Method for Manufacturing Lead Frame with Reflective Member for Optical Semiconductor Device]
Next, a method for manufacturing a lead frame with a reflecting member for an optical semiconductor device according to the present invention will be described.
A method of manufacturing a lead frame with a reflecting member for an optical semiconductor device according to the present invention includes a step of forming a first substrate in which a plurality of first members are provided on a plane, and a set corresponding to the first member. Forming a second substrate having a plurality of sets of the second member and the third member on a plane, between the second member and the third member of the second substrate, and the Forming the insulating resin so as to fill a step between the connection portion and the thin portion of the third member; and each second member of the second substrate corresponding to the plurality of first members of the first substrate; Are aligned, and a part of each bottom surface of each of the plurality of first members of the first substrate and a surface on the first member side of each second member of the second substrate are pressure-bonded to form multiple surfaces Forming a lead frame with a reflecting member for an optical semiconductor device. To do.

First, the process of forming the first substrate in the above manufacturing method will be described.
FIG. 9 is an explanatory view showing the first substrate in the manufacturing process of an example of the lead frame with a reflecting member for an optical semiconductor device according to the present invention.
As shown in FIG. 9, the flat plate-like first substrate 30 is provided with the first member 11 in multiple faces, and an outer frame portion 31 for holding the first member 11 is provided on the outermost periphery. Yes. And between the adjoining 1st member 11 and the 1st member 11, it becomes the dicing line 32 for isolate | separating into each optical semiconductor device.

  The material constituting the first substrate 30 is the same as the material constituting the first member 11, for example, from copper (Cu), copper alloy, 42 alloy (Ni 40.5% to 43% Fe alloy), or the like. A metal substrate can be used. Moreover, the thickness of the 1st board | substrate 30 is the range of 0.05 mm-0.5 mm, for example.

Moreover, it is preferable that a plating film containing silver (Ag) is formed on the opening side surface of the first member 11 in the first substrate 30. This is because the light from the optical semiconductor element can be reflected more efficiently. Note that the plating film may be formed on the entire surface of the first substrate 30.
The thickness of the plating film is, for example, in the range of 0.02 μm to 12 μm.

The first substrate 30 as described above can be formed by processing a metal substrate or the like using a processing method such as an etching method or a press method.
For example, when copper is used as the material of the first substrate 30, a photosensitive resist is applied, exposed and developed, patterned, and then processed by spray etching using an aqueous ferric chloride solution as an etching solution. Can do.

  In the present invention, the first member has a frame-like structure in which the opening side surface is inclined so that the opening on the top side is larger than the opening on the bottom side. When processing the substrate 30, the inclination of the opening side surface can be formed in a desired shape by adjusting the etching conditions (spray pressure, temperature, etc.).

Further, when forming a plating film containing silver as described above, for example, plating is performed on the surface of the first substrate 30 by performing electrolytic plating using a silver plating solution mainly composed of silver cyanide. A film can be formed.
In addition, before forming the plating film, for example, an electrolytic degreasing process, a pickling process, and a copper strike process may be appropriately selected, and then the plating film may be formed through an electrolytic plating process.

Next, the process of forming the second substrate in the above manufacturing method will be described.
FIG. 10 is an explanatory view showing a second substrate in a manufacturing process of an example of a lead frame with a reflecting member for an optical semiconductor device according to the present invention, wherein (a) shows a state before resin formation, (b) The state after resin formation is shown.

First, as shown in FIG. 10A, the second substrate 40 includes a pair of second members 12 corresponding to the first members 11 that are multi-faced to the first substrate 30 described above. A plurality of third members 13 are multifaceted on a plane, and the second member 12 and the third member 13 are disposed on the outermost periphery where the second member 12 and the third member 13 are multifaceted. Is provided. The outer periphery of the pair of second member 12 and third member 13 is a dicing line 42 for separation into individual optical semiconductor devices.
That is, the second substrate 40 shown in FIG. 10A has the same components as those of the lead frame substrate 4 for optical semiconductor devices shown in FIG.

  The material which comprises the 2nd board | substrate 40 is the same as the material which comprises the 2nd member 12 and the 3rd member 13, for example, copper (Cu), a copper alloy, 42 alloy (Ni40.5%-43%) A metal substrate made of an Fe alloy) or the like can be used. The thickness of the second substrate 40 is, for example, in the range of 0.05 mm to 0.5 mm.

In addition, a plating film containing silver (Ag) is preferably formed on the upper surface of the second member 12 and the upper surface of the third member 13 in the second substrate 40. This is because the light from the optical semiconductor element can be reflected more efficiently. The plating film may be formed on the entire surface of the second substrate 40.
The thickness of the plating film is, for example, in the range of 0.02 μm to 12 μm.

The second substrate 40 as described above can be formed by processing a metal substrate or the like using a processing method such as an etching method or a press method.
For example, when copper is used as the material of the second substrate 40, a photosensitive resist is applied, exposed and developed, patterned, and then processed by spray etching using an aqueous ferric chloride solution as an etchant. Can do.

  In the present invention, as described above, the third member 13 includes the connecting portion 13A and the thin-walled portion 13B having a thickness smaller than that of the connecting portion. It can be obtained by half-etching the substrate 40.

Moreover, when forming the plating film containing silver as described above, for example, plating is performed on the surface of the second substrate 40 by performing electroplating using a silver plating solution mainly composed of silver cyanide. A film can be formed.
In addition, before forming the plating film, for example, an electrolytic degreasing process, a pickling process, and a copper strike process may be appropriately selected, and then the plating film may be formed through an electrolytic plating process.

Next, as shown in FIG. 10B, the insulating resin 14 is placed between the second member 12 and the third member 13 of the second substrate 40 and on the thin portion 13 </ b> B of the third member 13. It is formed.
The insulating resin 14 can be formed, for example, by injection molding or transfer molding of a thermoplastic resin using a mold that has been processed into a desired shape, thereby insulating the second substrate 40 from insulation. The conductive resin 14 is integrally bonded.
The second substrate 50 with resin shown in FIG. 10B has the same components as the lead frame substrate 5 for optical semiconductor device with resin shown in FIG. 7 described above.

Next, the step of press-bonding the first substrate and the second substrate on which the insulating resin is formed in the manufacturing process of the present invention to form a multifaceted lead frame with a reflecting member for an optical semiconductor device. explain.
In the present invention, the first substrate 30 and the second substrate with resin 50 are aligned, a part of each bottom surface of the plurality of first members 11 of the first substrate 30, and The second member 13 of the corresponding second substrate 50 with resin is pressure-bonded to the surface on the first member side to form a multi-faced lead frame 60 with a reflecting member for an optical semiconductor device.
The alignment between the first substrate 30 and the second substrate 50 with resin may be performed by a known method. Further, the first substrate 30 and the second substrate 50 with resin may be pressure-bonded by a known method, for example, a surface opposite to the contact surface between the two after contacting them on the predetermined surface. The pressure can be applied by a method of applying pressure.

FIG. 11 is an explanatory view showing a state in which the first substrate and the second substrate after resin formation are pressure-bonded in the manufacturing process of an example of the lead frame with a reflecting member for an optical semiconductor device according to the present invention.
As shown in FIG. 11, from the openings of the plurality of first members 11 of the first substrate 30 after crimping, a part of the upper surface of the pair of second members 12 corresponding to the second substrate 50 with resin, respectively. The connecting portion 13A of the third member 13 and a part of the insulating resin 14 are exposed.
That is, FIG. 11 shows a form in which the lead frame 1 with a reflecting member for an optical semiconductor device according to the present invention is multifaceted in a flat plate shape. For example, by cutting (dicing) at a dicing line 32, FIG. From the lead frame 60 with a reflecting member for a multi-sided optical semiconductor device, the individual lead frames 1 with a reflecting member for an optical semiconductor device can be obtained.
In addition, as a method for manufacturing an optical semiconductor device using the lead frame with a reflecting member for an optical semiconductor device according to the present invention, for example, after the lead frame with a reflecting member for an optical semiconductor device is singulated, a semiconductor element mounting step And a method of performing a semiconductor element mounting step in a state where the lead frame with a reflecting member for an optical semiconductor device is applied in multiple faces. In the present invention, either method can be used. From the surface, a method of performing the semiconductor element mounting step in a multifaceted state described later is preferable.

Next, a manufacturing process of an example of the above-described lead frame with a reflecting member for an optical semiconductor device according to the present invention will be described with reference to cross-sectional views in each process.
FIG. 12 is a schematic process chart showing an example of a method for manufacturing a lead frame for an optical semiconductor device according to the present invention.

  First, as shown in FIG. 12A, a flat plate-like second substrate material 40A is prepared, processed into a desired shape by the above-described etching method or pressing method, and a pair of the second member 12 and the first member 12A. A second substrate 40 having a plurality of sets of three members 13 formed on a plane is formed (FIG. 12B). Although not shown, a plating film containing silver may be formed on the surface of the second substrate 40 by electrolytic plating as described above.

  Next, as shown in FIG. 12C, the step between the second member 12 and the third member 13 of the second substrate 40 and between the connecting portion 13A and the thin portion 13B of the third member 13 is filled. Then, the insulating resin 14 is formed. As the molding method, as described above, a method of injection molding or transfer molding of a thermoplastic resin using a mold processed into a desired shape can be used.

  Next, as shown in FIG. 12D, a first substrate 30 separately formed by an etching method or the like, and a second substrate (second substrate 50 with resin) on which the insulating resin 14 is formed, Are aligned, and a part of the bottom surface of the plurality of first members 11 of the first substrate 30 and the surface on the first member side of each second member 12 of the corresponding second substrate 50 with resin, To obtain a lead frame 60 with a reflecting member for an optical semiconductor device according to the present invention in a multi-faced form (FIG. 12E).

As described above, according to the method of manufacturing a lead frame with a reflecting member for an optical semiconductor device according to the present invention, the first member corresponds to the first member having a plurality of first surfaces on a plane and the first member. A plurality of optical semiconductor devices according to the present invention are obtained by aligning and press-bonding a pair of second members and a third substrate with a plurality of sets of the second members and a plurality of sets of the third members on a plane. The lead frame with a reflective member for use can be manufactured collectively.
In addition, since the surfaces to which the first substrate and the second substrate with resin are pressed are flat, alignment and pressure bonding are easier than in the case where there is a protruding shape.
Therefore, according to the present invention, a lead frame with a reflecting member for an optical semiconductor device can be manufactured with high productivity.

  The lead frame with a reflecting member for an optical semiconductor device obtained by the method for manufacturing a lead frame with a reflecting member for an optical semiconductor device according to the present invention includes a reflector (first member) and a lead portion (third member) of the lead frame. While ensuring the insulating property, the reflectance is high and the heat dissipation is excellent.

  More specifically, the lead frame with a reflecting member for an optical semiconductor device obtained by the method for manufacturing a lead frame with a reflecting member for an optical semiconductor device according to the present invention is a material having light reflectivity and heat dissipation like a metal material. By using the first member having a frame-like structure made of as a reflector, a lead frame with a reflecting member for an optical semiconductor device having high reflectivity can be obtained.

  Further, in the lead frame with a reflecting member for an optical semiconductor device obtained by the method for manufacturing a lead frame with a reflecting member for an optical semiconductor device according to the present invention, insulation as described in Patent Document 3 described above is ensured. Therefore, unlike the lead frame in which the bottom of the metal reflector is partially removed to form a step, there is no step on the bottom surface of the first member corresponding to the reflector, and the opening side surface is formed up to the element mounting surface of the second member Therefore, the light from the optical semiconductor element can be reflected efficiently.

  In the lead frame with a reflecting member for an optical semiconductor device obtained by the method for manufacturing a lead frame with a reflecting member for an optical semiconductor device according to the present invention, a first member that functions as a reflector and a die pad part of the lead frame mainly. Since the functioning second member is pressure-bonded, the heat from the optical semiconductor element placed on the second member can be efficiently transferred from the second member to the first member, and from the first member Since heat can be efficiently radiated, a lead frame with a reflecting member for an optical semiconductor device having excellent heat dissipation can be obtained.

[Method for Manufacturing Optical Semiconductor Device]
Next, a method for manufacturing an optical semiconductor device according to the present invention will be described.
FIG. 13 is a schematic process diagram showing an example of a method of manufacturing an optical semiconductor device according to the present invention.
Moreover, FIG. 14 is explanatory drawing which shows the state which mounted the optical semiconductor element in the manufacturing process of an example of the optical semiconductor device based on this invention.

  The manufacturing method of the optical semiconductor device according to the present invention is the above-described second member of the multi-sided lead frame with a reflecting member for an optical semiconductor device obtained by the above-described manufacturing method of the lead frame with a reflecting member for an optical semiconductor device. A step of placing an optical semiconductor element on the surface of the first member; and an optical semiconductor device in which the opening of the first member is filled with the translucent resin and the optical semiconductor element is sealed to be multifaceted And obtaining the individual optical semiconductor devices by dividing the multi-faced optical semiconductor devices into individual pieces.

  As an optical semiconductor device manufacturing method according to the present invention, first, as shown in FIG. 13A, a lead frame 60 with a reflecting member for a multi-sided optical semiconductor device obtained by the above-described manufacturing method is prepared, and then The optical semiconductor element 21 is placed on the upper surface of the second member 12 in the opening of the first member 11 via solder or a heat conductive adhesive 23, and the optical semiconductor element 21 and the first semiconductor element 21 are bonded to each other by the bonding wire 22. The two members 12 and the optical semiconductor element 21 and the third member 13 are electrically connected. (FIG. 13B).

  Here, since the third member 13 has a step structure composed of the connecting portion 13A and the thin portion 13B, if the upper surface of the connecting portion 13A is at the same height as the upper surface of the second member 12, Connection by the bonding wire 22 is facilitated.

Note that the plan view of the state in FIG. 13B corresponds to FIG.
As shown in FIG. 14, an optical semiconductor element 21 is placed on the upper surface of the second member 12 in the openings of the plurality of first members 11 that are multifaceted to the first substrate 30, and is bonded by bonding wires 22. The optical semiconductor element 21 and the second member 12 and the optical semiconductor element 21 and the third member 13 are electrically connected.

  Next, as shown in FIG. 13C, the opening of the first member 11 is filled with a translucent resin 24 to seal the optical semiconductor element 21, and then the first substrate 30 and the second substrate 40 is cut (diced) by a dicing line 32 to obtain individual optical semiconductor devices 20 separated into individual pieces (FIGS. 13D and 13E).

As described above, according to the present invention, a plurality of optical semiconductor devices are manufactured using the lead frame with a reflecting member for a multi-sided optical semiconductor device obtained by the method for manufacturing a lead frame with a reflecting member for an optical semiconductor device. Can be manufactured in batch.
Here, the lead frame with a reflecting member for a multi-sided optical semiconductor device can be handled in the same manner as a conventional lead frame in which a resin-made reflector is formed on a flat plate-like lead frame. The optical semiconductor devices according to the present invention can be manufactured collectively.
That is, since it is not necessary to newly introduce a special dedicated line, an increase in production cost can be suppressed.

  In addition, the lead frame with a reflecting member for an optical semiconductor device according to the present invention has higher reflectivity and excellent heat dissipation than a conventional lead frame having a resin reflector. The optical semiconductor device also has higher reflectivity and excellent heat dissipation than an optical semiconductor device having a conventional resin reflector.

  As described above, the lead frame with a reflecting member for an optical semiconductor device, the lead frame for an optical semiconductor device, the lead frame substrate for an optical semiconductor device, the optical semiconductor device, the method for manufacturing the lead frame with a reflecting member for an optical semiconductor device, and The manufacturing method of the optical semiconductor device has been described, but the present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the technical idea described in the claims of the present invention has substantially the same configuration and exhibits the same function and effect regardless of the case. It falls within the technical scope of the invention.

DESCRIPTION OF SYMBOLS 1 ... Lead frame with reflection member for optical semiconductor devices 2 ... Lead frame for optical semiconductor devices 3 ... Lead frame for optical semiconductor devices with resin 4 ... Lead frame substrate for optical semiconductor devices 5 ... Lead frame substrate for optical semiconductor device with resin 11... First member 11 a... Open side surface 12, 12 a, 12 b, 12 c... Second member 13, 13 a, 13 b, 13 c, 13 d, 13 e. Three members 13A ... Connection part 13B ... Thin part 14 ... Insulating resin 20 ... Optical semiconductor device 21 ... Optical semiconductor element 22 ... Bonding wire 23 ... Adhesive 24 ... -Translucent resin 30 ... 1st board | substrate 31 ... Outer frame part 32 ... Dicing line 40 ... 2nd board | substrate 40A ... 2nd board | substrate material 41 ... Outer frame part 42 ... Lee Sing line 50 ... resin with the second substrate 60 ... multi with optical semiconductor device for reflecting member with lead frame

Claims (11)

A first member made of a metal material and having a frame-like structure in which the opening side surface is inclined so that the opening on the top side is larger than the opening on the bottom side;
A second member made of a metal material and fixed to a part of the bottom surface of the frame-like structure of the first member;
Composed of metal material,
It has a step structure composed of a connection part and a thin part having a thickness smaller than that of the connection part,
In plan view,
The connecting portion is disposed in an opening on a bottom side of the first member;
A third member in which the thin portion is disposed below the bottom surface of the frame-like structure of the first member;
With
Insulating resin
Interposed between the thin portion of the third member and the bottom surface of the frame-like structure of the first member so that the third member and the first member are insulated; and
Interposed between the third member and the second member so that the third member and the second member are insulated;
There is no step on the bottom surface of the frame-like structure of the first member,
The surface of the second member corresponding to the bottom surface of the frame-like structure of the first member is flat,
A lead frame with a reflecting member for an optical semiconductor device, wherein a bottom surface of the frame-like structure of the first member and a surface of the second member corresponding to the bottom surface are directly fixed.   The lead frame with a reflecting member for an optical semiconductor device according to claim 1, wherein a plating film containing silver is formed on an opening side surface of the first member.   The plating film containing silver is formed in the surface at the said 1st member side in the said 2nd member, and the surface at the said 1st member side in the connection part of the said 3rd member, The Claim 1 characterized by the above-mentioned. The lead frame with a reflecting member for an optical semiconductor device according to claim 2.   4. The apparatus according to claim 1, wherein the first member includes a plurality of the second members or the third members, or a plurality of both of the second members and the third members. 5. A lead frame with a reflecting member for an optical semiconductor device according to the item.   An optical semiconductor device lead frame used in the lead frame with a reflecting member for an optical semiconductor device according to any one of claims 1 to 4, wherein the second member and the third member are A lead frame for an optical semiconductor device, comprising: A lead frame for an optical semiconductor device according to claim 5,
An insulating resin formed between the second member and the third member and on the thin portion of the third member;
A lead frame for an optical semiconductor device with a resin, comprising: A lead frame substrate for an optical semiconductor device used for manufacturing a lead frame with a reflecting member for an optical semiconductor device according to any one of claims 1 to 4,
A plurality of sets of the second member and the third member corresponding to the first member are multi-faceted on a plane, and the outermost periphery where the second member and the third member are multi-faceted The lead frame substrate for an optical semiconductor device has an outer frame portion for holding the second member and the third member. A lead frame substrate for an optical semiconductor device according to claim 7,
An insulating resin formed between the second member and the third member and on the thin portion of the third member;
A lead frame substrate for an optical semiconductor device with a resin, comprising: A lead frame with a reflecting member for an optical semiconductor device according to any one of claims 1 to 4,
An optical semiconductor element placed on the first member side surface of the second member;
A transparent resin that seals the optical semiconductor element and transmits light emitted from the optical semiconductor element;
An optical semiconductor device comprising: A first member having a frame-like structure made of a metal material and having an opening side surface inclined so that the opening on the top side is larger than the opening on the bottom side; and The second member fixed to a part of the bottom of the frame-like structure, a metal material, and having a step structure including a connecting portion and a thin-walled portion having a thickness smaller than the connecting portion. And a third member in which the connecting portion is disposed in the opening on the bottom side of the first member, and the thin portion is disposed below the bottom surface of the frame-like structure of the first member, Insulating resin is interposed between the thin portion of the third member and the bottom surface of the frame-like structure of the first member so that the third member and the first member are insulated, and Interposed between the third member and the second member so that the third member and the second member are insulated, There is no step on the bottom surface of the frame-shaped structure of one member, the surface of the second member corresponding to the bottom surface of the frame-shaped structure of the first member is flat, and the frame-shaped structure of the first member is flat. A method of manufacturing a lead frame with a reflecting member for an optical semiconductor device, wherein a bottom surface and the surface of the second member corresponding to the bottom surface are fixed by pressure bonding,
Forming a first substrate on which a plurality of the first members are multi-faced on a plane;
Forming a second substrate in which a plurality of sets of the second member and the third member corresponding to the first member are multi-faced on a plane;
Forming the insulating resin between the second member and the third member of the second substrate and filling the step between the connecting portion and the thin portion of the third member;
Positioning the first substrate and the second substrate on which the insulating resin is formed, a part of each bottom surface of the plurality of first members of the first substrate, and the second substrate A step of pressure-bonding the first member side surface of each of the second members to form a multi-faced lead frame with a reflecting member for an optical semiconductor device,
A method of manufacturing a lead frame with a reflecting member for an optical semiconductor device. Light is applied to the surface on the first member side of the second member of the multi-sided lead frame with a reflecting member for an optical semiconductor device obtained by the method for manufacturing a lead frame with a reflecting member for an optical semiconductor device according to claim 10. Placing a semiconductor element;
Filling the translucent resin into the opening of the first member, sealing the optical semiconductor element, and obtaining an optical semiconductor device with multiple faces;
Dividing the multifaceted optical semiconductor device into individual pieces to obtain individual optical semiconductor devices; and
An optical semiconductor device manufacturing method comprising:

Images