JP5510830B2 - Charge neutralizer - Google Patents

Description

  The present invention relates to a charge neutralization apparatus used in an industrial field that uses all ion beam or neutral particle beam generators, and in particular, a beam generator having a low energy of about 1000 eV or less and a high current density. For example, it is applied to fields such as ion doping, material surface modification, material synthesis, and ion engine.

  An ion beam source device that draws only ions from an electric field using a mesh structure or an electrode with one or many holes from a plasma source in which ions and electrons coexist to maintain almost electrical neutrality In FIG. 2, space charges are formed by the extracted ions, and when the extraction current density increases, a large electric field proportional to the generated electric field is generated, and as a result, the ion beam self-diverges. When the beam energy is large and the speed in the beam extraction direction is large, the effect of divergence is small. It becomes impossible to obtain a highly focused beam. To suppress this divergence, (1) a method in which a filament using a tungsten wire or the like is provided near the electrode, the filament is energized and heated, and the charge of ions is neutralized by the resulting thermoelectrons ( (See Patent Document 1 and Patent Document 2), (2) A method in which an electron gun is provided at a distance from an electrode, and an electron beam emitted from the electron gun is injected into an ion beam to neutralize charges (see Patent Document 3). ), (3) A light source is provided a little away from the final stage electrode for extracting the ion beam, and photoelectrons are emitted from the irradiated electrode surface by irradiating strong light from the beam extraction direction opposite to the plasma source. A method of neutralizing the charge by discharging (see Patent Document 4) has been devised.

Japanese Patent No. 3076843 JP-A-9-115850 Japanese Patent Laid-Open No. 7-273072 JP 2008-52909 A

  However, in the above method (1), in order to avoid excessive heat input to the electrode, a certain distance is required between the electrode and the filament for generating thermoelectrons, and when the energy of the ion beam is reduced, Of course, the divergence of the ion beam during that time cannot be ignored, and it is unavoidable that a part of the ion beam drawn from the electrode collides with the filament. There is a problem that the filament is damaged by the ion beam (shortening of the life of the filament) and the ion beam is contaminated by the filament material. In addition, the temperature of the electrode, the vessel wall, and the like due to heat radiation to the periphery of the filament is increased, and a large amount of electric power is required for heating the filament, which may increase the operating cost. In the method (2), the speed of the electron beam is generally about two orders of magnitude higher than the speed of the ion beam, the incident direction of the electron beam cannot be matched with the extraction direction of the ion beam, Since it is difficult to match the density distribution of the ion beam with the density distribution of the ion beam, it is difficult to completely neutralize the charge during the entire process from the extraction of the ion beam to the irradiation of the target. There is a problem that beam divergence cannot be suppressed. Furthermore, since neutralization of ion charges requires an electron beam to be incident in almost the same direction as the ion beam, this electron beam is likely to be incident on the target irradiated with the ion beam, and has a high energy (usually There is also a problem that electrons having about several hundred eV) greatly hinder the realization of ion beam irradiation under conditions of low electron temperature (about 10 eV or less) required by a plasma processing apparatus or the like.

In the present invention, the surface of the electrode for extracting the ion beam of the ion beam source device facing the side where the extracted beam is transmitted and applied to the target (hereinafter, this surface is referred to as the electrode back surface) Or, by irradiating the surface of the material that emits secondary electrons installed around the electrode, and both surfaces with a uniform and controlled electron beam with appropriate energy, the back of the electrode or the surrounding area The principle is that secondary electrons are emitted from both the material surface and both surfaces, and the space charge of the ion beam extracted by the secondary electrons is neutralized.
Even if a commonly used electrode material such as copper or molybdenum is used for the electrode itself, the secondary electron emission coefficient for incident electrons having appropriate energy (depending on the electrode material, but about 100 eV or more) exceeds 1, In principle, it is possible to neutralize charges by secondary electrons with an electron beam current comparable to the extracted ion beam current. Actually, the current value of the necessary electron beam is expected to increase due to the existence of an ion beam extraction hole on the electrode surface and irradiation other than the electrode, but the ampere having an energy of 300 eV or more. The generation of an electron beam of a class is easy, and the production of an electron beam for generating secondary electrons, which is necessary for neutralizing a commonly used ion beam, can be performed without problems with the existing technology.
If a high-current electron beam for generating secondary electrons cannot be used, an efficient secondary electron can be obtained by using or coating a material with a large secondary electron emission coefficient on the back of the electrode. Can also be released.
Furthermore, for surfaces that do not require generation of secondary electrons, the generation of unnecessary secondary electrons may cause discharge breakdown between the electrodes, which may hinder the normal operation of the device. In that case, unnecessary secondary electron emission is minimized by coating a material having a small secondary electron emission coefficient.
On the other hand, if secondary electron emission is necessary on a surface other than the back surface of the electrode, a necessary amount of secondary electrons may be generated by using or coating a material having an appropriate secondary electron emission coefficient. Is possible.

The utility of the following points is obtained by the present invention.
(1) According to the present invention, neutralization of the charge of an ion beam can be realized by a simple method of irradiating an electron beam onto the back surface of an electrode made of a commonly used material such as copper or molybdenum. .
(2) Neutralization of the space charge of the ion beam can be performed immediately after the generation and extraction of the ion beam, and during the entire process of the beam. It becomes possible to suppress.
(3) Since a filament that is a source of generation of impurities is not required, a high-purity beam can be generated.
(4) Since no filament is used, there is no need to consider the temperature rise of peripheral devices due to heating of the filament, and a stable operation can be performed.
(5) Since the ionic charge can be neutralized without using consumable parts such as filaments, maintenance and management of the apparatus are facilitated.
(6) As a result, it is possible to generate a high purity ion beam having a high current density in a low energy region of 100 eV or less, which has been difficult until now.
(7) By using a high-purity, high-current-density, low-energy ion beam, it becomes possible to synthesize and surface-modify various materials that could not be performed because of high beam energy.
(8) Since the electron beam is incident in a direction opposite to the ion beam emission direction, there is no direct electron beam incident on the target to which the ion beam is irradiated, thereby preventing the high energy electron from being incident on the target. Is possible. This enables application to an ion beam irradiation apparatus (for example, a plasma process apparatus) that needs to keep the electron temperature low.

The figure which is one Example of this invention, and irradiates an electron beam to the back surface of a ground electrode with a high secondary electron emission coefficient, and neutralizes ion charge with the generated secondary electrons. In another embodiment of the present invention, the ion charge is neutralized by secondary electrons generated by irradiating an electron beam to a metal having a high secondary electron emission coefficient installed around the ion beam passage. The figure which shows a system.

The ionic charge neutralization apparatus using the present invention based on the above principle can solve the problems of the conventional methods described above.
First, in the present invention, secondary electrons that neutralize the ion charge are emitted from the back surface of the electrode from which the ion beam is extracted, so that the ion charge is neutralized immediately after the ion is extracted from the electrode, and the space charge Can be immediately suppressed. Further, since it is not necessary to insert a filament into the ion beam, beam attenuation, filament damage, and ion beam contamination due to collision of ions with the filament are essentially impossible. Further, there is no problem of heat dissipation due to the filament. Furthermore, since the initial velocity of the emitted secondary electrons is small, and after the emission, the ions are attracted by the charge of the ions and move together with the ions, it is possible to neutralize the ion charges in the entire process of the ion beam. For these reasons, it is possible to maintain high beam focusing by a simple method of irradiating the back surface of the electrode with an electron beam.

An embodiment of the present invention is shown in FIG. The inside of the plasma source container of the ion beam source apparatus of FIG. 1 is evacuated by an exhaust apparatus not shown in FIG. 1, and a cusp magnetic field is applied around the container by a permanent magnet not shown in FIG. In a normal ion beam source apparatus, a plasma composed of ions and electrons is supplied into the plasma source container by an ion supply apparatus not shown in FIG. 1, and this is also shown in FIG. There are both cases where gas is supplied from a non-gas supply device. These plasmas or gases are supplied from a high-frequency supply device not shown in FIG. 1 into high-frequency power, or arc discharge between the filament electrode and the plasma source vessel wall not shown in FIG. Alternatively, it is ionized and heated by energy supply by other methods, and is confined as a high-density plasma isolated from the container wall by a strong magnetic field near the plasma source container wall.
In the case of the ion beam source apparatus shown here, the ion beam is extracted from this plasma by the three beam extraction electrodes (acceleration electrode, deceleration electrode, and ground electrode) shown in FIG. Then, this ion beam is self-diverged due to the effect of the self-electric field due to the charge of the ions, and a beam with good focusing cannot be obtained.
In the present invention, as shown in FIG. 1, the back surface of the outermost ground electrode is irradiated with an electron beam to generate secondary electrons, and the positive charges of ions are beamed by the negative charges of the secondary electrons. Neutralize immediately after extraction to suppress the generation of an electric field, eliminate the beam divergence, and realize a beam with good convergence. Since the initial velocity of most of the emitted secondary electrons is not large, it is pulled by the electrostatic force due to the positive charge of the ion beam and moves following the beam ions, so the entire process of the ion beam is performed until the target is irradiated. , Uniform charge neutralization can be performed.

When ion beam current density is high and generation of large secondary electrons is required, efficient secondary electron emission can be achieved by using or coating a material with a large secondary electron emission coefficient on the back of the electrode. Can be performed. In addition, for surfaces that do not require the generation of secondary electrons, the generation of unnecessary secondary electrons may cause discharge breakdown between the electrodes, which may hinder the normal operation of the device. If necessary, unnecessary secondary electron emission can be minimized by using a material having a small secondary electron emission coefficient or coating.
Furthermore, since the emission coefficient of secondary electrons has different energy dependence depending on the material with respect to the energy of incident electrons, secondary electron emission can be performed for that energy by selecting a specific electron beam energy. Efficient secondary electron emission and unnecessary emission suppression can be achieved at the same time by coating materials that have high values on surfaces that require high resistance and materials that have an emission coefficient as close to zero as possible on unnecessary surfaces. It is possible to realize.

FIG. 2 is a diagram showing another embodiment of the present invention. In order to supply electrons to the ion beam process, a material for emitting secondary electrons is installed in the vicinity of the ground electrode as shown in FIG. Then, it is possible to neutralize ionic charges by emitting secondary electrons by irradiating an electron beam.
When it is necessary to supply more electrons, the surface of both the ground electrode and the material installed near the ground electrode is irradiated with an electron beam to emit secondary electrons, so that It is possible to perform a sum.

  The electron beam generation method is not particularly limited with respect to the electron beam source used above.

  Low energy electrons generated by ionizing the gas flowing out from the ion source through the electrode hole or introduced in the vicinity of the electron beam line may contribute to neutralization of the ion charge.

Claims (8)

  In an ion beam source device that extracts ions from a plasma source in a plasma source container using an electrode having a mesh structure or one or many holes, it is uniformly controlled from a beam extraction direction opposite to the plasma source. By irradiating the irradiated electron beam, secondary electrons are emitted from the irradiated electrode surface, and the space charge of ions extracted from the electrode hole is neutralized to suppress the divergence of the ion beam. A charge neutralization apparatus characterized by the above.   By adjusting the amount of secondary electrons generated by changing the intensity of the electron beam and controlling the degree of charge neutralization, the magnitude of the electric field due to space charge is changed, and the ion extraction energy and extraction current are changed. 2. The charge neutralizing apparatus according to claim 1, wherein the size of the charge neutralizer is variable.   The surface of the electrode that needs to emit secondary electrons is made of a material having a large secondary electron emission coefficient, or the surface is coated to efficiently emit secondary electrons. The charge neutralizing device according to claim 1 or 2.   Use a material with a low secondary electron emission coefficient on the surface of the electrode and the container that does not need to emit secondary electrons, or coat the surface to minimize unnecessary secondary electron emission. The charge neutralization apparatus according to claim 1, wherein the charge neutralization apparatus is configured as described above.   By selecting the electron beam having a specific energy by utilizing the fact that the existence of the secondary electron emission coefficient in the energy of the incident electron beam varies depending on the material, the electrode and the container are selected for the energy. Efficient secondary electron emission by using a material with a high value for surfaces that require secondary electron emission, and using a material with an emission coefficient as close to zero as possible for unnecessary surfaces, or coating the surface. The charge neutralization apparatus according to claim 1, wherein suppression of unnecessary release is realized at the same time.   In an ion beam source device that draws out ions from a plasma source in a plasma source container using an electrode having a mesh structure or one or many holes, a material that emits secondary electrons installed around the electrode On the other hand, by irradiating a uniform and controlled electron beam from the beam extraction direction opposite to the plasma source, secondary electrons are emitted from the irradiated material surface, and ions extracted from the electrode hole Charge neutralization device for neutralizing space charge and suppressing ion beam divergence.   In an ion beam source apparatus for extracting ions from a plasma source in a plasma source container using an electrode having a mesh structure or one or many holes, an electrode made of a material that emits secondary electrons, and an electrode near the electrode By irradiating the material that emits secondary electrons around it with a uniform and controlled electron beam from the beam extraction direction opposite to the plasma source, secondary electrons are emitted from both irradiated surfaces. Is a charge neutralization device for neutralizing the space charge of ions extracted from the electrode holes by suppressing the divergence of the ion beam.   The charge neutralization apparatus according to any one of claims 1 to 7, wherein the secondary electrons generated by the electron beam, the gas flowing out from the ion source through the electrode hole, or the gas introduced near the electron beam line Is a charge neutralization device for neutralizing the space charge of the ions extracted from the electrode hole by both the low energy electrons generated by ionization by the electron beam and suppressing the divergence of the ion beam.

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