CN103713001B - The measuring system of the secondary electron yield of dielectric film and measuring method thereof - Google Patents
The measuring system of the secondary electron yield of dielectric film and measuring method thereof Download PDFInfo
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Abstract
本发明公开了一种介质薄膜的二次电子发射系数的测量系统及其测量方法，该系统包括：电子枪、桶状收集极、样品托、以及总电源，其中，桶状收集极的顶端开设有圆孔，样品托设置于桶状收集极中，电子枪设置于桶状收集极外侧，样品托、圆孔、以及电子枪发射端均在同一直线上；样品托通过第一电阻与总电源的接地端相连，电子枪与总电源的负极相连；桶状收集极上连接有正负极相反的第一电源和第二电源，第一电源和第二电源的另一端连接有转换开关，转换开关通过第二电阻与总电源的接地端相连接。本发明只需要一把电子枪，一个收集极，就能够对样品的二次电子发射系数进行测试，使得测量周期缩短，效率提高，并且本发明的测量系统结构简单，成本低。
The invention discloses a measurement system and method for measuring the secondary electron emission coefficient of a dielectric thin film. The system includes: an electron gun, a barrel-shaped collector, a sample holder, and a total power supply, wherein the top of the barrel-shaped collector has a Round hole, the sample holder is set in the barrel-shaped collector, the electron gun is arranged outside the barrel-shaped collector, the sample holder, the round hole, and the emission end of the electron gun are all on the same straight line; the sample holder is connected to the ground terminal of the main power supply through the first resistor The electron gun is connected to the negative pole of the total power supply; the barrel-shaped collector is connected to the first power supply and the second power supply with opposite positive and negative poles, and the other end of the first power supply and the second power supply is connected to a switch, and the switch passes through the second power supply. The resistor is connected to the ground terminal of the main power supply. The invention only needs one electron gun and one collecting pole to test the secondary electron emission coefficient of the sample, so that the measurement period is shortened and the efficiency is improved, and the measurement system of the invention has simple structure and low cost.
Description
技术领域technical field
本发明属于电子科学与技术领域，具体涉及一种介质薄膜的二次电子发射系数的测量系统及其测量方法。The invention belongs to the field of electronic science and technology, and in particular relates to a measurement system and a measurement method for the secondary electron emission coefficient of a dielectric thin film.
背景技术Background technique
在进行介质材料二次电子发射系数（SEY）的测量时，由于介质材料导电性差，使得在测量过程中介质材料表面产生带电现象。带电现象导致样品表面电位发生改变，致使材料二次电子发射系数的测量不准确甚至无法进行测量。在现有介质材料二次电子发射系数的测量方法中，为了消除材料的带电现象，早期，人们采用单脉冲的电子枪法进行测量。在单脉冲测量方法中，要求在两次脉冲间隔期间，设法对样品加热，使样品表面已经带的电荷泄放出去。单脉冲法测量周期长，很费时间，因而测量效率不高。目前，广泛采用的是双电子枪的测量方法。在双电子枪中，脉冲电子枪作为测量枪，直流电子枪作为中和枪。这两把电子枪的配合十分重要，例如，测量枪的电流要小于中和枪的电流；中和枪出射的电子束希望是弥散的；由中和枪发射的电子束能量要小于1eV。此外，在测量装置中，收集极与样品间需要有多层接地的栅网配合等等。这些因素使得整个测量装置非常复杂，成本较高，而且测量方法也复杂。When measuring the secondary electron emission coefficient (SEY) of a dielectric material, the surface of the dielectric material is charged during the measurement process due to the poor conductivity of the dielectric material. The charging phenomenon causes the surface potential of the sample to change, making the measurement of the secondary electron emission coefficient of the material inaccurate or even impossible to measure. In the existing methods for measuring the secondary electron emission coefficient of dielectric materials, in order to eliminate the charging phenomenon of the material, in the early days, people used the single-pulse electron gun method for measurement. In the single-pulse measurement method, it is required to try to heat the sample during the interval between two pulses, so that the charges already carried on the surface of the sample can be released. The single-pulse method has a long measurement period and is time-consuming, so the measurement efficiency is not high. At present, the measurement method of double electron gun is widely used. In the dual electron gun, the pulse electron gun is used as the measuring gun, and the DC electron gun is used as the neutralizing gun. The cooperation of these two electron guns is very important. For example, the current of the measuring gun should be smaller than that of the neutralization gun; the electron beam emitted by the neutralization gun should be dispersed; the energy of the electron beam emitted by the neutralization gun should be less than 1eV. In addition, in the measurement device, there needs to be multi-layer grounded grid cooperation between the collector and the sample. These factors make the whole measuring device very complicated, the cost is high, and the measuring method is also complicated.
发明内容Contents of the invention
本发明的目的在于克服现有技术中的问题，提供一种测量周期短、效率高的介质薄膜的二次电子发射系数的测量系统及其测量方法。The purpose of the present invention is to overcome the problems in the prior art and provide a measurement system and method for measuring the secondary electron emission coefficient of a dielectric thin film with a short period and high efficiency.
为达到以上目的，本发明的技术方案为：For achieving above object, technical scheme of the present invention is:
一种介质薄膜的二次电子发射系数的测量系统，包括：电子枪、桶状收集极、样品托、以及总电源，其中，桶状收集极的顶端开设有圆孔，样品托设置于桶状收集极中，电子枪设置于桶状收集极外侧，样品托、圆孔、以及电子枪发射端均在同一直线上；A measurement system for the secondary electron emission coefficient of a dielectric thin film, comprising: an electron gun, a barrel-shaped collector, a sample holder, and a total power supply, wherein a round hole is opened on the top of the barrel-shaped collector, and the sample holder is arranged on the barrel-shaped collector. In the pole, the electron gun is set on the outside of the barrel-shaped collector, and the sample holder, round hole, and the emission end of the electron gun are all on the same straight line;
样品托通过第一电阻与总电源的正极相连，总电源的正极接地，电子枪与总电源的负极相连；The sample holder is connected to the positive pole of the total power supply through the first resistor, the positive pole of the total power supply is grounded, and the electron gun is connected to the negative pole of the total power supply;
桶状收集极上连接有正负极相反的第一电源和第二电源，第一电源和第二电源的另一端连接有转换开关，转换开关通过第二电阻与总电源的正极相连接。The barrel-shaped collector is connected with a first power supply and a second power supply with opposite positive and negative poles, and the other end of the first power supply and the second power supply is connected with a transfer switch, and the transfer switch is connected with the positive pole of the total power supply through a second resistor.
还包括真空室，电子枪、桶状收集极、以及样品托设置于真空室中。It also includes a vacuum chamber, in which the electron gun, the barrel-shaped collector, and the sample holder are arranged.
所述真空室的真空气压小于3×10-3Pa。The vacuum pressure of the vacuum chamber is less than 3×10 -3 Pa.
所述总电源为直流高压稳压电源。The total power supply is a DC high voltage stabilized power supply.
所述第一电源和第二电源为电压为40V的直流电源。The first power supply and the second power supply are DC power supplies with a voltage of 40V.
一种介质薄膜的二次电子发射系数的测量方法，包括以下步骤：A method for measuring the secondary electron emission coefficient of a dielectric thin film, comprising the following steps:
1）调节电子枪参数以及总电源的负输出，以使得电子枪发射出聚焦状态的电子束；1) Adjust the parameters of the electron gun and the negative output of the total power supply so that the electron gun emits a focused electron beam;
2）在第一电阻和第二电阻上连接示波器；2) Connect an oscilloscope to the first resistor and the second resistor;
3）调节转换开关，使得桶状收集极与电极为正极的第一电源连通，并使电子枪工作于单次脉冲状态，用示波器记录下流过第一电阻的第一单次电流脉冲波形，以及流过第二电阻的第二单次电流脉冲波形；3) Adjust the transfer switch so that the barrel-shaped collector is connected to the first power supply whose electrode is the positive pole, and make the electron gun work in the state of single pulse. Use an oscilloscope to record the waveform of the first single current pulse flowing through the first resistor, and the flow The second single current pulse waveform passing through the second resistor;
4）根据第一单次电流脉冲波形和第二单次电流脉冲波形，读出第一单次电流脉冲波形和第二单次电流脉冲波形的幅度，计算出二次电子发射系数；4) According to the first single current pulse waveform and the second single current pulse waveform, read the amplitudes of the first single current pulse waveform and the second single current pulse waveform, and calculate the secondary electron emission coefficient;
5）保持总电源的输出不变，调节转换开关，将桶状收集极与电极为负极的第二电源连通，让电子枪工作在连续脉冲状态，以中和样品表面所带的正电荷；5) Keep the output of the total power supply unchanged, adjust the switch, connect the barrel-shaped collector with the second power supply whose electrode is the negative pole, and let the electron gun work in a continuous pulse state to neutralize the positive charge on the surface of the sample;
6）重复1）～5）的过程，绘制二次电子发射系数与入射电子能量的关系曲线。6) Repeat the process from 1) to 5), and draw the relationship curve between the secondary electron emission coefficient and the incident electron energy.
所述电子枪发射出聚焦状态的电子束能量为20～3000eV。The energy of the focused electron beam emitted by the electron gun is 20-3000eV.
所述步骤3）中，电子枪工作于单次脉冲状态时脉冲宽度为120～200us。In the step 3), when the electron gun works in a single pulse state, the pulse width is 120-200us.
所述步骤5）中，电子枪工作在连续脉冲状态时的脉冲宽度为120～200us，脉冲重复频率为100～1000Hz，电子枪工作时间为10～30s。In step 5), when the electron gun works in a continuous pulse state, the pulse width is 120-200 us, the pulse repetition frequency is 100-1000 Hz, and the electron gun works for 10-30 s.
其特征在于，所述电子枪、桶状收集极、以及样品托设置于真空室中，且真空室的真空气压小于3×10-3Pa。It is characterized in that the electron gun, barrel-shaped collector, and sample holder are arranged in a vacuum chamber, and the vacuum pressure of the vacuum chamber is less than 3×10-3Pa.
与现有技术比较，本发明的有益效果为：Compared with prior art, the beneficial effects of the present invention are:
本发明提供了一种介质薄膜的二次电子发射系数的测量系统，由于本发明中，在用于收集二次电子的桶状收集极上连接有能够进行正负极切换的电源，使得在进行完一次测量后，通过转换开关将桶状收集极与电源负极相连接，对上一次测量时，样品表面遗留下的正电荷进行中和，消除了样品的带电现象，因此，本发明只需要一把电子枪，一个收集极，就能够对样品的二次电子发射系数进行测试，使得测量周期缩短，效率提高，并且本发明的测量系统结构简单，成本低。The invention provides a measurement system for the secondary electron emission coefficient of a dielectric thin film. Because in the invention, a barrel-shaped collector for collecting secondary electrons is connected with a power supply capable of switching positive and negative poles, so that the After a measurement, the barrel-shaped collector is connected to the negative pole of the power supply through a switch to neutralize the positive charges left on the surface of the sample during the last measurement, eliminating the charging phenomenon of the sample. Therefore, the present invention only needs a With an electron gun and a collector, the secondary electron emission coefficient of the sample can be tested, so that the measurement cycle is shortened and the efficiency is improved, and the measurement system of the present invention is simple in structure and low in cost.
本发明还提供了一种介质薄膜的二次电子发射系数的测量方法，由于样品表面带正电荷，这些电荷的存在将影响下一次的测量，因此，通过对收集极施加负偏压，使得样品出射的二次电子都被反射回样品，将样品表面的正电荷中和掉，达到消除样品表面带正电荷的目的，因此，与现有技术相比较，本发明测量方法简便，并且能够提高了二次电子发射系数测试的准确性，缩短了测量周期，提高了测试效率，并且测量方法简便。The invention also provides a method for measuring the secondary electron emission coefficient of a dielectric thin film. Since the surface of the sample is positively charged, the existence of these charges will affect the next measurement. Therefore, by applying a negative bias to the collector, the sample The outgoing secondary electrons are all reflected back to the sample to neutralize the positive charge on the surface of the sample to achieve the purpose of eliminating the positive charge on the surface of the sample. Therefore, compared with the prior art, the measurement method of the present invention is simple and convenient, and can improve the The accuracy of the secondary electron emission coefficient test shortens the measurement period, improves the test efficiency, and the measurement method is simple and convenient.
附图说明Description of drawings
图1是本发明的介质薄膜的二次电子发射系数的测量系统结构示意图；Fig. 1 is the measuring system structural representation of the secondary electron emission coefficient of the dielectric thin film of the present invention;
图2是本发明实施例SiO2薄膜材料二次电子发射系数的测量结果曲线图。Fig. 2 is a graph showing the measurement results of the secondary electron emission coefficient of the SiO2 thin film material according to the embodiment of the present invention.
图中，1为电子枪，2为桶状收集极，3为样品托，4为总电源，5为第一电源，6为第二电源，7为转换开关。In the figure, 1 is an electron gun, 2 is a barrel collector, 3 is a sample holder, 4 is a main power supply, 5 is a first power supply, 6 is a second power supply, and 7 is a transfer switch.
具体实施方式detailed description
下面结合附图对本发明做详细描述。The present invention will be described in detail below in conjunction with the accompanying drawings.
如图1所示，本发明提供了一种介质薄膜的二次电子发射系数的测量系统，包括：电子枪1、桶状收集极2、样品托3、以及总电源4，其中，电子枪1、桶状收集极2、以及样品托3设置于真空室中，真空室内的真空度为高真空，真空室的真空气压小于3×10-3Pa；总电源4为直流高压稳压电源。真空室内的桶状收集极2的顶端开设有圆孔，样品托3设置于桶状收集极2中，电子枪1设置于桶状收集极2外侧，样品托3、圆孔、以及电子枪1发射端均在同一直线上；当电子枪1发出的电子束，以一定的能量穿过桶状收集极2上的圆孔，轰击到样品时，样品便产生二次电子。As shown in Figure 1, the present invention provides a kind of measurement system of the secondary electron emission coefficient of dielectric thin film, comprising: electron gun 1, barrel collector 2, sample holder 3, and total power supply 4, wherein, electron gun 1, barrel The shape collector 2 and the sample holder 3 are arranged in a vacuum chamber, the vacuum degree of the vacuum chamber is high vacuum, and the vacuum pressure of the vacuum chamber is less than 3×10-3Pa; the total power supply 4 is a DC high voltage stabilized power supply. The top of the barrel-shaped collector 2 in the vacuum chamber is provided with a round hole, the sample holder 3 is arranged in the barrel-shaped collector 2, the electron gun 1 is arranged outside the barrel-shaped collector 2, the sample holder 3, the round hole, and the emitting end of the electron gun 1 They are all on the same straight line; when the electron beam emitted by the electron gun 1 passes through the round hole on the barrel-shaped collector 2 with a certain energy and hits the sample, the sample will generate secondary electrons.
样品托3通过第一电阻R1与总电源4的正极相连，总电源4的正极接地，电子枪1与总电源4的负极相连；电子枪1的灯丝接直流高压稳压电源的负输出，样品托3接直流高压稳压电源的接地端，这样，电子束轰击样品时的能量就由直流高压稳压电源的输出决定，电子枪1的输出束流由电子枪灯丝电流或调制极电位控制，此外，电子枪1可以工作在单次脉冲或连续脉冲状态，电子枪1的工作状态可以通过控制电子枪中调制极电位的状态（单次或连续脉冲）来实现。The sample holder 3 is connected to the positive pole of the total power supply 4 through the first resistor R1, the positive pole of the total power supply 4 is grounded, and the electron gun 1 is connected to the negative pole of the total power supply 4; the filament of the electron gun 1 is connected to the negative output of the DC high voltage stabilized power supply, and the sample holder 3 Connect to the ground terminal of the DC high-voltage stabilized power supply, so that the energy of the electron beam bombarding the sample is determined by the output of the DC high-voltage stabilized power supply, and the output beam current of the electron gun 1 is controlled by the filament current of the electron gun or the potential of the modulation electrode. It can work in a single pulse or continuous pulse state, and the working state of the electron gun 1 can be realized by controlling the state of the modulating electrode potential in the electron gun (single or continuous pulse).
桶状收集极2上连接有正负极相反的第一电源5和第二电源6，第一电源5和第二电源6的另一端连接有转换开关7，转换开关7通过第二电阻R2与总电源4的接地端相连接，其中，所述第一电源5和第二电源6为电压为40V的直流电源。The barrel-shaped collector 2 is connected with a first power supply 5 and a second power supply 6 with opposite positive and negative poles, and the other end of the first power supply 5 and the second power supply 6 is connected with a changeover switch 7, and the changeover switch 7 connects with the second resistance R2. The ground terminals of the main power supply 4 are connected, wherein the first power supply 5 and the second power supply 6 are DC power supplies with a voltage of 40V.
需要说明的，本发明中桶状收集极2为金属桶状收集极，样品托3为平板金属样品托，转换开关7为单刀双掷开关。It should be noted that in the present invention, the barrel-shaped collector 2 is a metal barrel-shaped collector, the sample holder 3 is a flat metal sample holder, and the transfer switch 7 is a single-pole double-throw switch.
本发明的工作原理为:Working principle of the present invention is:
在进行二次电子发射系数的测量时，电子枪1工作在单次脉冲状态脉冲宽度为120～200us，总电源2与第一电源5连接，桶状收集极2电位比样品电位高40伏，以利于收集二次电子。样品发射出的二次电子被桶状收集极2捕获形成二次电子对应的电流，该电流经取样第二电阻R2由示波器测出。与此同时，经样品托也形成一个电流脉冲，经取样第一电阻R1由示波器测出。由示波器记录的第一电阻R1、第二电阻R2上的脉冲峰值UR1和UR2，计算出二次电子发射系数SEY，即SEY=UR2/（UR1+UR2）。When measuring the secondary electron emission coefficient, the electron gun 1 works in a single pulse state with a pulse width of 120-200us, the total power supply 2 is connected to the first power supply 5, and the potential of the barrel-shaped collector 2 is 40 volts higher than the sample potential, so that Facilitate the collection of secondary electrons. The secondary electrons emitted by the sample are captured by the barrel-shaped collector 2 to form a current corresponding to the secondary electrons, which is measured by the oscilloscope through the second sampling resistor R2. At the same time, a current pulse is also formed through the sample support, and the first resistance R1 is measured by the oscilloscope after sampling. The secondary electron emission coefficient SEY is calculated from the pulse peak values UR1 and UR2 on the first resistor R1 and the second resistor R2 recorded by the oscilloscope, that is, SEY=UR2/(UR1+UR2).
当上一次测量工作完成后，样品表面会带电荷，电荷的极性可以从SEY的大小判断出来。若SEY>1，则样品表面带正电荷；若SEY<1，则样品表面带负电荷。这些电荷的存在将影响下一次的测量。因此，在二次测量之间，应该对上一次测量遗留下的电荷进行中和。中和是在样品表面带正电荷时进行的。中和时，设置桶状收集极2电位比样品电位低40伏，入射电子能量保持上一次测量时的能量，并让电子枪工作在连续脉冲状态。中和的基本原理是，在桶状收集极2为负偏压时，样品出射的二次电子基本上都被反射回样品，将样品表面的正电荷中和掉。合理选择电子枪1工作时的脉冲宽度、脉冲重复频率、电子枪1工作时间是必要的。以SiO2薄膜为例，实验结果表明，电子枪工作时的脉冲宽度为120～200us，脉冲重复频率为100～1000Hz，电子枪工作时间为10～30s时，中和效果较好。When the last measurement work is completed, the surface of the sample will be charged, and the polarity of the charge can be judged from the size of SEY. If SEY>1, the sample surface is positively charged; if SEY<1, the sample surface is negatively charged. The presence of these charges will affect the next measurement. Therefore, between two measurements, the charge left over from the previous measurement should be neutralized. Neutralization occurs when the sample surface is positively charged. During neutralization, set the potential of the barrel-shaped collector 2 to be 40 volts lower than the sample potential, keep the energy of the incident electrons at the energy of the last measurement, and let the electron gun work in a continuous pulse state. The basic principle of neutralization is that when the barrel-shaped collector 2 is negatively biased, the secondary electrons emitted by the sample are basically reflected back to the sample, neutralizing the positive charge on the surface of the sample. It is necessary to reasonably select the pulse width, pulse repetition frequency, and working time of the electron gun 1 when the electron gun 1 is working. Taking SiO2 film as an example, the experimental results show that the neutralization effect is better when the pulse width of the electron gun is 120-200us, the pulse repetition frequency is 100-1000Hz, and the working time of the electron gun is 10-30s.
若上一次的测量工作结束后，样品表面带负电荷的话，可以通过改变电子束入射能量并对样品进行轰击，让样品表面带正电荷后，再按上述方法进行中和。If the surface of the sample is negatively charged after the last measurement, you can change the incident energy of the electron beam and bombard the sample to make the surface of the sample positively charged, and then neutralize according to the above method.
本发明还提供了一种介质薄膜的二次电子发射系数的测量方法，包括以下步骤：The present invention also provides a method for measuring the secondary electron emission coefficient of a dielectric thin film, comprising the following steps:
1）调节电子枪参数以及总电源4的负输出，以使得电子枪发射出聚焦状态的电子束，电子束能量为20～3000eV；1) Adjust the parameters of the electron gun and the negative output of the total power supply 4, so that the electron gun emits an electron beam in a focused state, and the energy of the electron beam is 20-3000eV;
2）在第一电阻R1和第二电阻R2上连接示波器；2) Connect an oscilloscope to the first resistor R1 and the second resistor R2;
3）调节转换开关7，使得桶状收集极2与电极为正极的第一电源5连通，并使电子枪工作于单次脉冲状态，用示波器记录下流过第一电阻R1的第一单次电流脉冲波形，以及流过第二电阻R2的第二单次电流脉冲波形，电子枪工作于单次脉冲状态时脉冲宽度为120～200us；3) Adjust the transfer switch 7 so that the barrel-shaped collector 2 is connected to the first power supply 5 whose electrode is the positive pole, and make the electron gun work in a single pulse state, and use an oscilloscope to record the first single current pulse flowing through the first resistor R1 Waveform, and the second single current pulse waveform flowing through the second resistor R2, the pulse width is 120-200us when the electron gun is working in the single pulse state;
4）根据第一单次电流脉冲波形和第二单次电流脉冲波形，读出第一单次电流脉冲波形和第二单次电流脉冲波形的幅度，计算出二次电子发射系数；4) According to the first single current pulse waveform and the second single current pulse waveform, read the amplitudes of the first single current pulse waveform and the second single current pulse waveform, and calculate the secondary electron emission coefficient;
5）保持总电源4的输出不变，调节转换开关7，将桶状收集极2与电极为负极的第二电源6连通，让电子枪工作在连续脉冲状态，以中和样品表面所带的正电荷，电子枪工作在连续脉冲状态时的脉冲宽度为120～200us，脉冲重复频率为100～1000Hz，电子枪工作时间为10～30s；5) Keep the output of the total power supply 4 unchanged, adjust the transfer switch 7, connect the barrel-shaped collector 2 with the second power supply 6 whose electrode is the negative pole, and let the electron gun work in a continuous pulse state to neutralize the positive energy on the surface of the sample. Charge, when the electron gun works in a continuous pulse state, the pulse width is 120-200us, the pulse repetition frequency is 100-1000Hz, and the working time of the electron gun is 10-30s;
6）重复1）～5）的过程，绘制二次电子发射系数与入射电子能量的关系曲线。6) Repeat the process from 1) to 5), and draw the relationship curve between the secondary electron emission coefficient and the incident electron energy.
需要说明的是，本发明中所述电子枪1、桶状收集极2、以及样品托3设置于真空室中，且真空室的真空气压小于3×10-3Pa。It should be noted that, in the present invention, the electron gun 1 , barrel collector 2 , and sample holder 3 are arranged in a vacuum chamber, and the vacuum pressure of the vacuum chamber is less than 3×10 −3 Pa.
实验结果：Experimental results:
下面以以SiO2薄膜为例，按照本发明的测量方法，测量了Si衬底上，厚度约500nm的SiO2薄膜样品的二次电子发射系数，结果如图2所示。测量结果表明，SiO2薄膜样品SEY的最大值约4.1，最大值的位置约400eV。整个曲线较为光滑，未出现明显的带电现象。说明本发明的测量结果可行。Taking SiO2 film as an example below, according to the measurement method of the present invention, the secondary electron emission coefficient of the SiO2 film sample with a thickness of about 500nm was measured on the Si substrate, and the results are as shown in Figure 2. The measurement results show that the maximum value of SEY of the SiO2 thin film sample is about 4.1, and the position of the maximum value is about 400eV. The entire curve is relatively smooth, and there is no obvious charging phenomenon. It shows that the measurement results of the present invention are feasible.
另外，显示出，电子枪1工作时的脉冲宽度为120～200us，脉冲重复频率为100～1000Hz，电子枪1工作时间为10～30s时，中和效果较好。In addition, it is shown that when the electron gun 1 works with a pulse width of 120-200 us, a pulse repetition frequency of 100-1000 Hz, and a working time of the electron gun 1 of 10-30 s, the neutralization effect is better.
本发明对研究介质材料二次电子发射特性，提供了一种新的测量系统和测量方法。该系统不仅结构简单，成本低，而且测量方法简便、测量周期短效率高。The invention provides a new measurement system and measurement method for studying the secondary electron emission characteristics of dielectric materials. The system is not only simple in structure and low in cost, but also simple in measurement method, short in measurement period and high in efficiency.
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| CN110146529B (en) * | 2019-05-16 | 2020-10-09 | 中国科学院高能物理研究所 | A method for measuring secondary electron emission coefficient of dielectric materials |
| CN110133462B (en) * | 2019-05-20 | 2021-06-08 | 国网陕西省电力公司 | Aging performance test system and method of composite insulator based on space charge effect |
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