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JP5344766B2 - フォトマスク及びそれを使用するレーザアニール装置並びに露光装置 - Google Patents

フォトマスク及びそれを使用するレーザアニール装置並びに露光装置 Download PDF

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Publication number
JP5344766B2
JP5344766B2 JP2010137976A JP2010137976A JP5344766B2 JP 5344766 B2 JP5344766 B2 JP 5344766B2 JP 2010137976 A JP2010137976 A JP 2010137976A JP 2010137976 A JP2010137976 A JP 2010137976A JP 5344766 B2 JP5344766 B2 JP 5344766B2
Authority
JP
Japan
Prior art keywords
substrate
photomask
transport direction
alignment mark
substrate transport
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010137976A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012003038A (ja
Inventor
誠 畑中
正実 岩本
和重 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
V Technology Co Ltd
Original Assignee
V Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by V Technology Co Ltd filed Critical V Technology Co Ltd
Priority to JP2010137976A priority Critical patent/JP5344766B2/ja
Priority to PCT/JP2011/062135 priority patent/WO2011158630A1/ja
Priority to CN201180029636.3A priority patent/CN102947760B/zh
Priority to KR1020127034458A priority patent/KR101780368B1/ko
Priority to TW100120270A priority patent/TWI512388B/zh
Publication of JP2012003038A publication Critical patent/JP2012003038A/ja
Application granted granted Critical
Publication of JP5344766B2 publication Critical patent/JP5344766B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H01L21/0268—Shape of mask

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Recrystallisation Techniques (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2010137976A 2010-06-17 2010-06-17 フォトマスク及びそれを使用するレーザアニール装置並びに露光装置 Expired - Fee Related JP5344766B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010137976A JP5344766B2 (ja) 2010-06-17 2010-06-17 フォトマスク及びそれを使用するレーザアニール装置並びに露光装置
PCT/JP2011/062135 WO2011158630A1 (ja) 2010-06-17 2011-05-26 フォトマスク及びそれを使用するレーザアニール装置並びに露光装置
CN201180029636.3A CN102947760B (zh) 2010-06-17 2011-05-26 光掩模和使用它的激光退火装置以及曝光装置
KR1020127034458A KR101780368B1 (ko) 2010-06-17 2011-05-26 포토마스크 및 그것을 사용하는 레이저 어닐링 장치 및 노광 장치
TW100120270A TWI512388B (zh) 2010-06-17 2011-06-10 光罩、使用該光罩之雷射退火裝置及曝光裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010137976A JP5344766B2 (ja) 2010-06-17 2010-06-17 フォトマスク及びそれを使用するレーザアニール装置並びに露光装置

Publications (2)

Publication Number Publication Date
JP2012003038A JP2012003038A (ja) 2012-01-05
JP5344766B2 true JP5344766B2 (ja) 2013-11-20

Family

ID=45348039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010137976A Expired - Fee Related JP5344766B2 (ja) 2010-06-17 2010-06-17 フォトマスク及びそれを使用するレーザアニール装置並びに露光装置

Country Status (5)

Country Link
JP (1) JP5344766B2 (zh)
KR (1) KR101780368B1 (zh)
CN (1) CN102947760B (zh)
TW (1) TWI512388B (zh)
WO (1) WO2011158630A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI701517B (zh) * 2014-12-23 2020-08-11 德商卡爾蔡司Ｓｍｔ有限公司 光學構件
JP2019046910A (ja) * 2017-08-31 2019-03-22 株式会社ブイ・テクノロジー レーザアニール装置及びレーザアニール方法
CN109062001B (zh) * 2018-08-27 2022-04-08 京东方科技集团股份有限公司 一种掩膜版
CN109742044B (zh) * 2019-01-11 2022-04-12 京东方科技集团股份有限公司 一种激光退火装置、阵列基板、显示装置及制作方法
CN110767576B (zh) * 2019-10-17 2022-10-21 上海华力集成电路制造有限公司 激光退火设备及激光退火工艺
US11275312B1 (en) * 2020-11-30 2022-03-15 Waymo Llc Systems and methods for verifying photomask cleanliness

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4040210B2 (ja) * 1999-06-30 2008-01-30 株式会社東芝 露光方法、レチクル及び半導体装置の製造方法
TWI227913B (en) * 2003-05-02 2005-02-11 Au Optronics Corp Method of fabricating polysilicon film by excimer laser crystallization process
JP4754924B2 (ja) * 2005-10-07 2011-08-24 株式会社ブイ・テクノロジー 露光装置
JP4971835B2 (ja) * 2007-03-02 2012-07-11 株式会社ブイ・テクノロジー 露光方法及び露光装置
JP4992967B2 (ja) * 2007-03-15 2012-08-08 富士通株式会社 表示パネル、積層型表示素子及びその製造方法
JP4897006B2 (ja) * 2008-03-04 2012-03-14 エーエスエムエル ネザーランズ ビー．ブイ． アラインメントマークを設ける方法、デバイス製造方法及びリソグラフィ装置
JP2009251290A (ja) 2008-04-07 2009-10-29 V Technology Co Ltd 露光装置
JP5471046B2 (ja) * 2009-06-03 2014-04-16 株式会社ブイ・テクノロジー レーザアニール方法及びレーザアニール装置

Also Published As

Publication number Publication date
TWI512388B (zh) 2015-12-11
KR20130113356A (ko) 2013-10-15
TW201214022A (en) 2012-04-01
WO2011158630A1 (ja) 2011-12-22
CN102947760B (zh) 2015-05-13
JP2012003038A (ja) 2012-01-05
KR101780368B1 (ko) 2017-09-21
CN102947760A (zh) 2013-02-27

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