JP5182138B2 - Electro-optical device and electronic apparatus - Google Patents

Description

  The present invention relates to an electro-optical device such as a liquid crystal device and an electronic apparatus including the electro-optical device, such as a liquid crystal projector, and more particularly to a substrate constituting the electro-optical device when the electro-optical device is manufactured. The present invention relates to a technical field of wiring disposed in the vicinity of an alignment mark for positioning the substrate.

  In this type of electro-optical device, for example, as disclosed in Patent Document 1, an electro-optical material such as liquid crystal is sandwiched between a pair of substrates bonded to each other with a sealing material. Here, the seal material is disposed in a seal region along the periphery of a pixel region (or a pixel array region) in which a plurality of pixels are arranged. An alignment mark for aligning the pair of substrates at the time of manufacturing the electro-optical device is provided in a predetermined region inside the seal region (that is, the pixel region side when viewed from the seal region) in each substrate.

JP 2004-151343 A

  At the time of manufacturing this type of electro-optical device, a pair of substrates are bonded to each other while detecting an alignment mark provided on each substrate by, for example, a camera. For this reason, for example, wiring for driving the electro-optical device must be disposed avoiding the alignment mark, and there is a technical problem that the degree of freedom of wiring layout is limited.

  The present invention has been made in view of the above problems, for example, and provides an electro-optical device and an electronic apparatus that can appropriately align a pair of substrates while improving the degree of freedom of wiring layout. Let it be an issue.

  In order to solve the above-described problem, an electro-optical device according to an aspect of the invention has a pair of substrates disposed opposite to each other and a periphery of a pixel region in which a plurality of pixels on one of the pair of substrates are arranged. An alignment mark provided in a peripheral region for positioning the pair of substrates and a material formed on the upper layer side of the alignment mark on the one substrate and having conductivity and light transmission When viewed in plan on the one substrate, the wiring at least partially covers the alignment mark.

  According to the electro-optical device of the present invention, the alignment mark for aligning a pair of substrates is provided in a peripheral region located around the pixel region in which a plurality of pixels are arranged on one of the pair of substrates. It has been. Here, the “pixel area” does not mean an area of individual pixels, but means an entire area in which a plurality of pixels are arranged in a matrix, and is typically an “image display area” or It corresponds to “display area”.

  For example, a wiring such as a signal wiring or a power supply wiring is formed on one substrate on the upper layer side of the alignment mark and includes a material having conductivity and light transmission. The wiring covers the alignment mark at least partially when viewed in plan on one substrate. Here, it is desirable that the degree of “light transmission” (for example, light transmittance) is extremely high (that is, the wiring is transparent), but the alignment mark can be detected in the manufacturing process of the electro-optical device. Any degree is acceptable.

  According to the inventor's research, in the manufacturing process of the electro-optical device, when the pair of substrates are bonded together, the wiring is arranged avoiding the alignment mark in order to detect the alignment mark (ie, The wiring is arranged so that the alignment mark and the wiring do not overlap when viewed in plan on the substrate). For this reason, it has been found that the degree of freedom of wiring layout is limited.

  However, in the present invention, the wiring formed on the upper layer side of the alignment mark in the peripheral region on one substrate so as to at least partially cover the alignment mark includes a material having conductivity and light transmission. Yes. That is, in the present invention, the alignment mark can be detected (or recognized) through the wiring that at least partially covers the alignment mark.

  For this reason, in the present invention, there is no restriction that “a wiring is arranged avoiding the alignment mark”. That is, according to the present invention, it is possible to improve the degree of freedom of wiring layout. In addition, according to the present invention, since the alignment mark can be detected through the wiring that at least partially covers the alignment mark, the pair of substrates can be appropriately aligned.

  Furthermore, since the alignment mark and the wiring can be arranged so as to overlap each other when viewed in plan on the substrate, the width of the wiring can be made relatively wide. As a result, the electrical resistance of the wiring can be reduced, and the power consumption of the electro-optical device can be suppressed.

  In one aspect of the electro-optical device of the present invention, the material is indium tin oxide.

  According to this aspect, the electro-optical device can be manufactured at a relatively low cost, which is very advantageous in practice.

  In another aspect of the electro-optical device according to the aspect of the invention, a plurality of pixel electrodes are arranged corresponding to each of the plurality of pixels on the one substrate, and the wiring is formed in the peripheral region. It is formed on the lower layer side through an insulating film rather than a plurality of pixel electrodes.

  According to this aspect, the plurality of pixel electrodes are arranged on one substrate corresponding to each of the plurality of pixels. The pixel electrode is typically formed as a transparent electrode made of an indium tin oxide (ITO) film. Further, on one substrate, the wiring is formed in the peripheral region on the lower layer side through the insulating film than the plurality of pixel electrodes.

  In order to solve the above problems, an electronic apparatus according to the present invention includes the above-described electro-optical device of the present invention (including various aspects thereof).

  According to the electronic apparatus of the present invention, since the above-described electro-optical device of the present invention is provided, a projection display device, a mobile phone, an electronic notebook, a word processor, and a viewfinder type capable of performing high-quality display. Alternatively, various electronic devices such as a monitor direct-view video tape recorder, a workstation, a videophone, a POS terminal, and a touch panel can be realized.

  In addition, as an electronic apparatus of the present invention, for example, an electrophoretic device such as electronic paper, an electron emission device (Field Emission Display and Conduction Electron-Emitter Display), a display device using these electrophoretic devices and an electron emission device are realized. Is also possible.

  The effect | action and other gain of this invention are clarified from the form for implementing demonstrated below.

It is the top view which looked at the TFT array substrate of the liquid crystal device which concerns on embodiment of this invention from the side of the opposing board | substrate with each component formed on it. It is the HH 'sectional view taken on the line of FIG. FIG. 6 is an equivalent circuit diagram of various elements, wirings, and the like in a plurality of pixels formed in a matrix that forms a pixel region of the liquid crystal device. FIG. 2 is an enlarged plan view showing a part of FIG. 1 in an enlarged manner. FIG. 6 is a cross-sectional view taken along line AA ′ in FIG. 5. It is a top view which shows the structure of the projector as an example of the electronic device to which the liquid crystal device which concerns on embodiment of this invention is applied.

  Hereinafter, embodiments of an electro-optical device and an electronic apparatus according to the invention will be described with reference to the drawings. In the following drawings, the scales are different for each layer and each member so that each layer and each member can be recognized on the drawing. In the following embodiments, as an example of an electro-optical device, a TFT (Thin Film Transistor) active matrix driving type liquid crystal device with a built-in driving circuit is cited.

<Liquid crystal device>
A liquid crystal device according to an embodiment of the present invention will be described with reference to FIGS.

  First, the overall configuration of the liquid crystal device according to the present embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view of the TFT array substrate of the liquid crystal panel according to the present embodiment as viewed from the side of the counter substrate together with the components formed thereon, and FIG. 2 is a plan view of FIG. It is a HH 'line sectional view.

  1 and 2, in the liquid crystal device 100, the TFT array substrate 10 and the counter substrate 20 are arranged to face each other. The TFT array substrate 10 is made of a substrate such as a quartz substrate, a glass substrate, or a silicon substrate, and the counter substrate 20 is made of a substrate such as a quartz substrate or a glass substrate. Here, the “TFT array substrate 10” and the “counter substrate 20” according to the present embodiment are examples of the “pair of substrates” according to the present invention.

  A liquid crystal layer 50 is sealed between the TFT array substrate 10 and the counter substrate 20, and the TFT array substrate 10 and the counter substrate 20 are surrounded by an image display region 10a as an example of the “pixel region” according to the present invention. They are bonded to each other by a sealing material 52 provided in a sealing region 52a located in the area.

  The sealing material 52 is made of, for example, an ultraviolet curable resin, a thermosetting resin, or an ultraviolet / heat combination type curable resin for bonding the two substrates, and is applied to the TFT array substrate 10 in the manufacturing process, and then irradiated with ultraviolet rays. And cured by heating or the like. In the sealing material 52, a gap material such as glass fiber or glass bead is sprayed for setting the interval (that is, the gap) between the TFT array substrate 10 and the counter substrate 20 to a predetermined value. Note that the gap material may be arranged in the image display region 10a or a peripheral region located around the image display region 10a in addition to or instead of the material mixed in the seal material 52.

  In FIG. 1, a light-shielding frame light-shielding film 53 for defining the image display region 10a is provided on the counter substrate 20 side in parallel with the inside of the seal region 52a where the sealant 52 is disposed. However, part or all of the frame light shielding film 53 may be provided as a built-in light shielding film on the TFT array substrate 10 side.

  A data line driving circuit 101, a sampling circuit 7, a scanning line driving circuit 104, and an external circuit connection terminal 102 are formed in the peripheral area located around the image display area 10 a on the TFT array substrate 10.

  In the peripheral region on the TFT array substrate 10, the data line driving circuit 101 and a plurality of external circuit connection terminals 102 are provided along one side of the TFT array substrate 10 on the outer peripheral side of the seal region 52 a.

  In addition, a region located on the inner side of the seal region 52 a in the peripheral region on the TFT array substrate 10 is covered with the frame light shielding film 53 along one side of the image display region 10 a along one side of the TFT array substrate 10. Thus, the sampling circuit 7 is arranged. The scanning line driving circuit 104 is provided along two sides adjacent to one side of the TFT array substrate 10 so as to be covered with the frame light shielding film 53.

  On the TFT array substrate 10, vertical conduction terminals 106 for connecting the two substrates with the vertical conduction material 107 are arranged in regions facing the four corner portions of the counter substrate 20. Thus, electrical conduction can be established between the TFT array substrate 10 and the counter substrate 20. Further, a lead wiring 90 for electrically connecting the external circuit connection terminal 102 to the data line driving circuit 101, the scanning line driving circuit 104, the vertical conduction terminal 106, and the like is formed.

  Although not shown here, alignment marks for aligning the TFT array substrate 10 and the counter substrate 20 are provided in each of the four corners of the frame region 53a having a rectangular frame shape in the manufacturing process of the liquid crystal device 100. Yes.

  In FIG. 2, on the TFT array substrate 10, a laminated structure in which pixel switching TFTs as drive elements, wiring lines such as scanning lines and data lines are formed is formed. Although the detailed structure of this laminated structure is not shown in FIG. 2, pixel electrodes 9a made of a transparent material such as ITO are formed in an island shape in a predetermined pattern for each pixel on the laminated structure. Has been.

  The pixel electrode 9a is formed in the image display region 10a on the TFT array substrate 10 so as to face a counter electrode 21 described later. On the surface of the TFT array substrate 10 facing the liquid crystal layer 50, that is, on the pixel electrode 9a, an alignment film 16 is formed so as to cover the pixel electrode 9a.

  A light shielding film 23 is formed on the surface of the counter substrate 20 facing the TFT array substrate 10. For example, the light shielding film 23 is formed in a lattice shape when viewed in plan on the facing surface of the facing substrate 20. In the counter substrate 20, a non-opening area is defined by the light shielding film 23, and an area partitioned by the light shielding film 23 is an opening area through which light emitted from, for example, a projector lamp or a direct viewing backlight is transmitted. The light shielding film 23 may be formed in a stripe shape, and the non-opening region may be defined by the light shielding film 23 and various components such as data lines provided on the TFT array substrate 10 side.

  On the light shielding film 23, a counter electrode 21 made of a transparent material such as ITO is formed so as to face the plurality of pixel electrodes 9a. In order to perform color display in the image display region 10a on the light shielding film 23, a color filter (not shown in FIG. 2) may be formed in a region including a part of the opening region and the non-opening region. An alignment film 22 is formed on the counter electrode 21 on the counter surface of the counter substrate 20.

  In addition to the data line driving circuit 101, the scanning line driving circuit 104, the sampling circuit 7, etc., a plurality of data lines are pre-set at a predetermined voltage level on the TFT array substrate 10 shown in FIGS. A precharge circuit that supplies the charge signal before the image signal, an inspection circuit for inspecting the quality, defects, and the like of the liquid crystal device 100 during manufacture or at the time of shipment may be formed.

  Next, the basic configuration of the pixel portion of the liquid crystal device 100 will be described with reference to FIG. FIG. 3 is an equivalent circuit diagram of various elements, wirings, and the like in a plurality of pixels formed in a matrix that constitutes a pixel region of the liquid crystal device.

  In FIG. 3, a pixel electrode 9 a and a TFT 30 which is a transistor for controlling the switching of the pixel electrode 9 a are formed in a plurality of pixels formed in a matrix configuration of the image display region 10 a of the liquid crystal device 100. The data line 6 a to which the image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. Good.

  Further, the scanning line 11a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2,..., Gm are applied to the scanning line 11a in a pulse-sequential manner in this order at a predetermined timing. It is configured. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and the image signal S1, S2,..., Sn supplied from the data line 6a is obtained by closing the switch of the TFT 30 as a switching element for a certain period. Write at a predetermined timing.

  Image signals S1, S2,..., Sn written to the liquid crystal via the pixel electrode 9a are held for a certain period with the counter electrode 21 formed on the counter substrate 20. The liquid crystal modulates light and enables gradation display by changing the orientation and order of the molecular assembly depending on the applied voltage level. In the normally white mode, the transmittance for incident light is reduced according to the voltage applied in units of each pixel, and in the normally black mode, the light is incident according to the voltage applied in units of each pixel. The light transmittance is increased, and light having a contrast corresponding to an image signal is emitted from the liquid crystal device as a whole.

  In order to prevent the image signal held here from leaking, a storage capacitor 70 is added electrically in parallel with the liquid crystal capacitor formed between the pixel electrode 9 a and the counter electrode 21. One electrode of the storage capacitor 70 is electrically connected to the drain of the TFT 30 in parallel with the pixel electrode 9a, and the other electrode is electrically connected to the capacitor wiring 91 having a fixed potential so as to have a constant potential. It is connected to the.

  The capacitor wiring 91 is electrically connected to a power supply circuit provided outside via the external circuit connection terminal 102 and the like. The potential of the power supply supplied to the capacitor wiring 91 is a common potential LCCOM supplied to the counter electrode 21 (see FIG. 2) disposed to face the pixel electrode 9a.

  Next, a specific configuration around the alignment mark in the liquid crystal device 100 will be described with reference to FIGS. 4 is an enlarged plan view showing a part of FIG. 1 in an enlarged manner, and FIG. 5 is a cross-sectional view taken along line AA ′ of FIG. In FIGS. 4 and 5, for convenience of explanation, only related members are shown, and other members are omitted as appropriate. FIG. 4 shows a specific configuration around the alignment mark provided at the upper left corner of the frame region 53a of the liquid crystal device 100 shown in FIG.

  In FIG. 4, alignment marks 311, 312, 321 and 322 are regions inside the seal region 52 a and outside the image display region 10 a (that is, the frame region 53 a (see FIG. 1)). Is provided at a position where is not provided. The alignment marks 311, 312, 321 and 322 are formed by simultaneously patterning the same metal film such as aluminum as the data line 6 a and the relay electrode 60.

  Here, the alignment marks 311 and 321 are alignment marks for measuring the XY displacement amount and the θ displacement amount, and the alignment marks 312 and 322 are alignment marks for measuring the assembly displacement amount. As shown in FIG. 5, the alignment marks 311 and 312 are provided on the TFT array substrate 10, and the alignment marks 321 and 322 are provided on the counter substrate 20.

  As shown in FIG. 4, the alignment marks 311, 312, 321, and 322 are arranged around the alignment marks 311, 312, 321, and 322. The portion except 322 is shielded from light. That is, by providing a plurality of wirings, the same effect as when the frame light shielding film 53 is provided in the entire frame region 53a can be obtained.

  Particularly in this embodiment, as shown in FIGS. 4 and 5, the transparent wiring 200 made of an ITO film is disposed on the upper side of the alignment mark 312 via the interlayer insulating film 42 so as to cover the alignment mark 312. Has been. The “transparent wiring 200” according to the present embodiment is an example of the “wiring” according to the present invention.

  Since the transparent wiring 200 is made of an ITO film, the alignment mark 312 can be recognized or detected through the transparent wiring 200 even if the transparent wiring 200 is disposed so as to cover the alignment mark 312 as shown in FIG. That is, in the manufacturing process of the liquid crystal device 100, the TFT array substrate 10 and the counter substrate 20 can be appropriately aligned. In addition, since the wiring can be designed so as to cover the alignment mark 312 and the like, the degree of freedom in wiring layout can be improved.

  As shown in FIG. 5, in the image display area 10a of the liquid crystal device 100, on the TFT array substrate 10, the first layer including the scanning lines 11b and the like, the second layer including the semiconductor layer 1a and the like, and the data lines on the TFT array substrate 10 from the bottom. A third layer including 6a and the relay electrode 60, a fourth layer including the capacitor electrode 71, and a fifth layer including the pixel electrode 9a are stacked.

  Further, the base insulating film 12 is provided between the first layer and the second layer, the interlayer insulating film 41 is provided between the second layer and the third layer, and the interlayer insulating film is provided between the third layer and the fourth layer. 42, a capacitive insulating film 75 is laminated between the fourth layer and the fifth layer to prevent short-circuiting between various components. The “capacitive insulating film 75” according to the present embodiment is an example of the “insulating film” according to the present invention.

  In FIG. 5, the TFT 30 includes the semiconductor layer 1a and the gate electrode 3a. The semiconductor layer 1a is made of a polysilicon film, and is made up of a channel region 1a ′, a data line side source / drain region 1b, and a pixel electrode side source / drain region 1c. Although not shown here, a data line side LDD (Lightly Doped Drain) region is formed between the channel region 1a ′ and the data line side source / drain region 1b, and the channel region 1a ′ and the pixel electrode are formed. A pixel electrode side LDD region is formed between the side source / drain regions 1c. That is, the TFT 30 has an LDD structure.

  The data line side source / drain region 1b is electrically connected to the data line 6a through a contact hole formed in the interlayer insulating film 41 and the gate insulating film 2. On the other hand, the pixel electrode side source / drain region 1 c is electrically connected to the relay electrode 60 through a contact hole formed in the interlayer insulating film 41 and the gate insulating film 2.

  As shown in FIG. 5, the gate electrode 3a is configured as a part of the scanning line 11a, and is disposed on the upper layer side of the semiconductor layer 1a via the gate insulating film 2 so as to face the channel region 1a ′. Has been. Further, in FIG. 5, in the scanning line 11b arranged on the lower layer side than the semiconductor layer 1a through the base insulating film 12, a portion overlapping the channel region 1a ′ of the semiconductor layer 1a functions as a gate electrode.

  As described above, the TFT 30 according to this embodiment has a double gate structure. According to such a configuration, it is possible to increase the on-current of the TFT 30 as compared with the case where the gate electrode is formed only on one of the upper layer side and the lower layer side of the semiconductor layer 1a.

  In FIG. 5, the base insulating film 12 is made of, for example, a silicon oxide film. In addition to the function of insulating the semiconductor layer 1a from the scanning line 11b, the base insulating film 12 is formed on the entire surface of the TFT array substrate 10 so that the surface of the TFT array substrate 10 is roughened during polishing or remains after cleaning. It has a function of preventing deterioration of the characteristics of the TFT 30 due to dirt or the like.

  In FIG. 5, the data line 6 a and the relay electrode 60 are provided on the upper layer side of the semiconductor layer 1 a on the TFT array substrate 10 via the interlayer insulating film 41. The relay electrode 60 is electrically connected to the pixel electrode 9a through a contact hole formed in the interlayer insulating film 42 and the capacitor insulating film 75.

  In FIG. 5, a capacitor electrode 71 is provided on the upper layer side of the data line 6 a and the relay electrode 60 on the TFT array substrate 10 via the interlayer insulating film 42. The capacitor electrode 71 is provided so as to cover both the opening region and the non-opening region except for a portion provided with a contact hole for electrically connecting the pixel electrode 9a and the relay electrode 60.

  The capacitor electrode 71 is disposed so as to face the pixel electrode 9 a with the capacitor insulating film 75 therebetween, and forms a storage capacitor 70. The capacitor electrode 71 is a fixed potential side capacitor electrode that is electrically connected to the capacitor wiring 91 and maintained at the common potential LCCOM. The capacitor electrode 71 is made of a transparent conductive material such as ITO.

The capacitor insulating film 75 is, for example, a single layer structure composed of a silicon oxide (SiO ₂ ) film such as an HTO (High Temperature Oxide) film, an LTO (Low Temperature Oxide) film, or a silicon nitride (SiN) film, or a multilayer structure. It has a structure.

  By forming the storage capacitor 70, the potential holding characteristic of the pixel electrode 9a is improved, and display characteristics such as contrast improvement and flicker reduction can be improved. In addition, since the storage capacitor 70 is formed by the pixel electrode 9a and the capacitor electrode 71, the device configuration is compared with a case where, for example, an upper electrode and a lower electrode are provided in addition to the pixel electrode 9a to form a storage capacitor. Can be simplified.

  Furthermore, since the capacitor electrode 71 is provided on the lower layer side than the pixel electrode 9a, electrical or electromagnetic coupling between the pixel electrode 9a and the lower layer side (for example, the data line 6a) of the capacitor electrode 71 is prevented. It can also function as a shield layer. Therefore, it is possible to reduce the possibility of potential fluctuations or the like in the pixel electrode 9a.

  The transparent wiring 200 described above is provided in the same layer as the capacitor electrode 71 as shown in FIG. That is, the transparent wiring 200 and the capacitor electrode 71 are formed by patterning simultaneously from the same transparent conductive film.

  On the other hand, on the counter substrate 20, in order from the bottom (that is, the upper side in FIG. 5), the first layer including the alignment marks 321 and 322, the second layer including the frame light shielding film 53 and the light shielding film 23, and the like. A third layer including the electrode 21 is laminated. In addition, an interlayer insulating film 43 is laminated between the first layer and the second layer, and an interlayer insulating film 44 is laminated between the second layer and the third layer, so that various components are short-circuited. Is preventing.

<Electronic equipment>
Next, a case where the above-described liquid crystal device is applied to a projector which is an example of an electronic device will be described with reference to FIG. The liquid crystal device 100 described above is used as a light valve of a projector. FIG. 6 is a plan view illustrating a configuration example of the projector.

  As shown in FIG. 6, a lamp unit 1102 including a white light source such as a halogen lamp is provided inside the projector 1100. The projection light emitted from the lamp unit 1102 is separated into three primary colors of RGB by four mirrors 1106 and two dichroic mirrors 1108 arranged in the light guide 1104, and serves as a light valve corresponding to each primary color. The light enters the liquid crystal panels 1110R, 1110B, and 1110G.

  The configurations of the liquid crystal panels 1110R, 1110B, and 1110G have the same configuration as that of the above-described liquid crystal device 100, and are driven by R, G, and B primary color signals supplied from the image signal processing circuit, respectively. . The light modulated by these liquid crystal panels enters the dichroic prism 1112 from three directions. In this dichroic prism 1112, R and B light is refracted at 90 degrees, while G light travels straight. Accordingly, as a result of the synthesis of the images of the respective colors, a color image is projected onto the screen or the like via the projection lens 1114.

  Here, paying attention to the display images by the liquid crystal panels 1110R, 1110B, and 1110G, the display images by the liquid crystal panels 1110R and 1110B need to be horizontally reversed with respect to the display images by the liquid crystal panel 1110G.

  Since light corresponding to the primary colors R, G, and B is incident on the liquid crystal panels 1110R, 1110B, and 1110G by the dichroic mirror 1108, it is not necessary to provide a color filter.

  In addition to the electronic device described with reference to FIG. 6, a mobile personal computer, a mobile phone, a liquid crystal television, a viewfinder type or a monitor direct-view type video tape recorder, a car navigation device, a pager, and an electronic notebook , Calculators, word processors, workstations, videophones, POS terminals, devices with touch panels, and the like. Needless to say, the present invention can be applied to these various electronic devices.

  The present invention is not limited to the above-described embodiment, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification, and an electro-optical device with such a change, In addition, an electronic apparatus including the electro-optical device is also included in the technical scope of the present invention.

  DESCRIPTION OF SYMBOLS 10 ... TFT array substrate, 20 ... Counter substrate, 100 ... Liquid crystal device, 200 ... Transparent wiring, 311, 312, 321, 322 ... Alignment mark

Claims (4)

A pair of substrates disposed opposite each other;
An alignment mark for aligning the pair of substrates, provided in a peripheral region located around a pixel region in which a plurality of pixels on one substrate of the pair of substrates is arranged;
A wiring formed on the upper side of the alignment mark on the one substrate and including a material having conductivity and light transmission;
The electro-optical device, wherein the wiring covers at least partially the alignment mark when viewed in plan on the one substrate.   The electro-optical device according to claim 1, wherein the material is indium tin oxide. On the one substrate, a plurality of pixel electrodes are arranged corresponding to each of the plurality of pixels,
The electro-optical device according to claim 1, wherein the wiring is formed in the peripheral region on a lower layer side than the plurality of pixel electrodes with an insulating film interposed therebetween.   An electronic apparatus comprising the electro-optical device according to claim 1.

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