JP5119645B2 - Electro-optical device and electronic apparatus including the same - Google Patents

Description

  The present invention relates to a technical field of an electro-optical device such as a reflective liquid crystal device, and an electronic apparatus such as a liquid crystal projector including the electro-optical device.

  In a reflective liquid crystal device which is an example of this type of electro-optical device, for example, in the case of an active matrix driving method, as disclosed in Patent Document 1, for example, a large number of reflective pixel electrodes and switching control thereof are performed. And an element substrate formed of a silicon substrate provided with a transistor connected thereto, a data line for supplying an image signal and a scanning signal, and wiring such as a scanning line. In addition, a transparent counter substrate provided with a counter electrode and the like arranged to face the pixel electrode through liquid crystal is provided. During operation of such a liquid crystal device, a driving voltage is generated between the pixel electrode and the counter electrode for each pixel. By this drive voltage, the display operation is performed by changing the alignment state of the liquid crystal between the pixel electrode and the counter electrode for each pixel. At this time, the incident light enters from the counter substrate side, is reflected by the reflective pixel electrode, and is emitted from the counter substrate side as outgoing light.

  On the other hand, this type of electro-optical device is frequently used not only as a direct-view display but also as a light modulation means (light valve) of, for example, a projection display device. In particular, in the case of a projection display device, strong light from a light source is incident on the light valve. Therefore, a light-shielding film as a light-shielding means that shields incident light from light does not cause a malfunction in the transistor in the light valve. Often built in the valve. For example, Patent Document 1 proposes a technique of providing a metal layer that narrows a path of light entering from a gap between adjacent pixel electrodes as a light shielding unit.

JP 2003-279953 A

  However, the technique disclosed in Patent Document 1 has a technical problem in that a metal layer as a light shielding means is provided, so that the laminated structure of the element substrate becomes complicated and the manufacturing process may increase. Furthermore, since the element substrate is formed of a silicon substrate, if incident light reaches the silicon substrate, irregularly reflected light or stray light that is reflected by other parts in the apparatus due to reflection of the light by the silicon substrate. May increase. There is a technical problem that the transistor may malfunction due to such irregularly reflected light or stray light.

  The present invention has been made in view of the above-described problems, for example, and provides an electro-optical device that can reduce the occurrence of malfunction due to light in a transistor, and an electronic apparatus including such an electro-optical device. Let it be an issue.

Electro-optical device according to an embodiment of the present invention, a quartz substrate, and the light reflective pixel electrode provided on the quartz substrate, a data line, the lower layer side than the pixel electrode in the quartz substrate And a high-concentration drain region electrically connected to the pixel electrode, a high-concentration source region electrically connected to the data line, and the high-concentration drain region. A channel region located between the high concentration source region, a low concentration drain region located between the high concentration drain region and the channel region, and between the high concentration source region and the channel region. a transistor having a semiconductor layer comprising a lightly doped source region located, to the surface on which the pixel electrodes are provided in the quartz substrate is provided on the opposite side, absorbs light and wear Anda light absorber consisting of colored photocurable resin or thermosetting resin by agent, said light absorber have a same refractive index as the quartz substrate, the data line, along said semiconductor layer A main line part formed from the main line part, and an extension part formed so as to overlap the high-concentration source region from the main line part, and in plan view, the channel region is formed from the main line part and the extension part. The low-concentration drain region is disposed inside the pixel electrode and in a plan view, the low-concentration drain region is disposed more inside the pixel electrode than the low-concentration source region .
Also, the electro-optical device according to an embodiment of the present invention, the light absorber is characterized by having a higher thermal conductivity than the thermal conductivity of the transparent substrate.
Also, the electro-optical device according to an embodiment of the present invention, the light absorber is characterized by comprising a black resin.
Also, an electronic apparatus according to an embodiment of the present invention is characterized in that it comprises an electro-optical device described above.

  According to the first electro-optical device of the present invention, a plurality of reflective pixel electrodes are provided on a transparent substrate made of, for example, glass or quartz. Each pixel electrode is made of a reflective film such as an Al (aluminum) film alone, or a reflective film such as an Al film is laminated on a transparent conductive film such as ITO (Indium Tin Oxide). Or become The plurality of pixel electrodes are arranged in a matrix, for example, on the transparent substrate. The pixel electrode may be a striped electrode or a segmented electrode. Each of the plurality of pixel electrodes is electrically connected to a wiring such as a data line through a transistor. During operation of the electro-optical device, for example, an image signal is supplied to the transistor from a data line. At the same time, a scanning signal is supplied to the transistor from the scanning line, for example. A transistor provided for each pixel electrode selectively supplies an image signal to the pixel electrode in accordance with the scanning signal. Thus, for example, by driving an electro-optical material such as liquid crystal sandwiched between the pixel electrode and the counter electrode in each pixel, image display is performed in a display region in which a plurality of pixel electrodes are arranged. At this time, since the reflective pixel electrode is provided in the present invention, the incident light enters from the counter substrate side provided with the counter electrode, is reflected by the reflective pixel electrode, and exits as the output light from the counter substrate side. . Note that a storage capacitor electrically connected to the pixel electrode may be formed. In this case, the potential retention characteristics of the pixel electrode are improved by the storage capacitor, and the display can have high contrast.

  In the present invention, in particular, the plurality of transistors are provided on the lower layer side than the pixel electrode so as to overlap the pixel electrode. In other words, the plurality of transistors are arranged on the lower layer side than the pixel electrode in the region where the pixel electrode is formed. That is, the plurality of transistors are not provided in the gaps between adjacent pixel electrodes. Therefore, in order to shield the plurality of transistors from light, it is not necessary to provide light shielding means between adjacent pixel electrodes. Therefore, the laminated structure on the transparent substrate can be simplified, and the number of steps in the manufacturing process can be reduced. As a result, the manufacturing cost for manufacturing the electro-optical device can also be reduced.

  Furthermore, if no countermeasures are taken, and a plurality of reflective pixel electrodes and transistors are provided on a silicon substrate as disclosed in Patent Document 1 described above, the pixel electrodes adjacent to each other are not arranged. Since the light incident from the gap is reflected by the surface of the silicon substrate, there is a possibility that irregularly reflected light and stray light that are reflected by other parts in the apparatus increase. For this reason, such irregularly reflected light or stray light may reach the transistor, which may cause malfunction due to, for example, an increase in light leakage current in the transistor. Even if a light shielding means such as a light shielding film for shielding light incident from the gap between adjacent pixel electrodes is formed on the silicon substrate, it is difficult to completely block the light and the light shielding means. There is a possibility that diffuse reflection light and stray light may increase by itself.

  However, in the present invention, in particular, the plurality of reflective pixel electrodes and transistors are provided on a transparent substrate. Therefore, since the transparent substrate can transmit light incident from the gap between adjacent pixel electrodes, reflection on the surface of the substrate on which the pixel electrodes and the transistors are provided can be reduced or prevented. In other words, light incident from the gap between adjacent pixel electrodes can be escaped to the back side of the transparent substrate almost or completely without being reflected in the electro-optical device. Accordingly, it is possible to reduce or prevent the occurrence of irregularly reflected light and stray light in the apparatus. For this reason, it is possible to reduce or prevent the malfunction of the transistor due to the diffuse reflected light or stray light reaching the transistor.

  As described above, according to the first electro-optical device according to the present invention, since a plurality of reflective pixel electrodes and transistors are provided on the transparent substrate, it is possible to reduce the occurrence of malfunctions in the transistors due to diffusely reflected light and stray light. Or it can be prevented.

  In order to solve the above problems, a second electro-optical device according to the present invention is more transparent than a transparent substrate, a plurality of reflective pixel electrodes provided on the transparent substrate, and the pixel electrodes on the transparent substrate. Provided on the lower layer side so as to overlap the pixel electrode, the plurality of transistors electrically connected to the plurality of pixel electrodes, and the opposite side of the surface of the transparent substrate on which the pixel electrodes are provided And a light absorber that absorbs light.

  According to the second electro-optical device according to the present invention, image display is performed in a display region in which a plurality of pixel electrodes are arranged in substantially the same manner as the first electro-optical device according to the present invention described above.

  In the present invention, in particular, as in the first electro-optical device according to the present invention described above, the plurality of transistors are provided on the lower layer side than the pixel electrode so as to overlap the pixel electrode. Therefore, as in the first electro-optical device according to the present invention described above, the number of steps in the manufacturing process can be reduced.

  Further, particularly in the present invention, as in the first electro-optical device according to the present invention described above, the plurality of reflective pixel electrodes and transistors are provided on a transparent substrate. Therefore, similarly to the above-described first electro-optical device according to the present invention, it is possible to reduce or prevent the malfunction of the transistor caused by the diffusely reflected light or the stray light reaching the transistor.

  In addition, in the present invention, in particular, a light absorber that absorbs light is provided on the surface opposite to the surface on which the pixel electrode is provided on the transparent substrate (that is, the back surface). More specifically, a light absorber made of, for example, flat aluminum made black by anodizing, for example, is attached to the back surface of the transparent substrate with, for example, a transparent adhesive. The light absorber may be formed of, for example, a resin in which carbon (C) or titanium (Ti) is dispersed, or a metal material such as metal chromium (Cr) or nickel (Ni). Therefore, the light that passes through the transparent substrate can be absorbed by the light absorber. Accordingly, it is possible to reduce or prevent the occurrence of irregularly reflected light and stray light due to the light transmitted through the transparent substrate being reflected by another member or device and incident again into the electro-optical device. Accordingly, it is possible to reliably reduce or prevent the malfunction of the transistor due to the diffused reflected light or stray light reaching the transistor.

  As described above, according to the second electro-optical device of the present invention, a plurality of reflective pixel electrodes and transistors are provided on the transparent substrate, and the surface of the transparent substrate on which the pixel electrodes are provided; Since the light absorber is provided on the opposite surface, it is possible to reduce or prevent the occurrence of malfunction in the transistor due to diffusely reflected light or stray light.

  In one aspect of the second electro-optical device according to the present invention, the light absorber is bonded to the opposite surface by an adhesive having the same refractive index as that of the transparent substrate.

  According to this aspect, the adhesive that bonds the transparent substrate and the light absorber to each other has the same refractive index as that of the transparent substrate. Here, the “same refractive index of the transparent substrate” according to the present invention is the same as the refractive index of the transparent substrate to such an extent that practically no interface reflection due to the difference in refractive index at the interface with the transparent substrate occurs. In other words, it means that the refractive index of the transparent substrate is substantially the same as the refractive index of the transparent substrate. How much is substantially the same is determined depending on the image quality, device specifications, etc. required for the electro-optical device, and in practice, the refractive index of the same adhesive is: What is necessary is just to determine experimentally, empirically, simulation etc. according to the refractive index of a transparent substrate. Therefore, the reflection of light at the interface between the transparent substrate and the adhesive (in other words, the back surface of the transparent substrate) can be almost or completely eliminated. Accordingly, it is possible to reduce or prevent the occurrence of malfunctions in the transistor due to irregularly reflected light or stray light.

  In another aspect of the second electro-optical device according to the invention, the light absorber has a thermal conductivity higher than that of the transparent substrate.

  According to this aspect, the light absorber is formed of a resin, a metal, or the like having a higher thermal conductivity than a transparent substrate made of, for example, glass or quartz. Therefore, heat generated during operation of the electro-optical device can be quickly released from the electro-optical device to the outside of the device via the light absorber. That is, it is possible to improve the heat dissipation of the electro-optical device. Accordingly, it is possible to suppress a decrease in display performance of the electro-optical device that may occur with an increase in temperature.

  In another aspect of the second electro-optical device according to the invention, the light absorber has the same refractive index as that of the transparent substrate.

  According to this aspect, the light absorber is formed of, for example, a black resin having the same refractive index as that of the transparent substrate. Therefore, light reflection at the interface between the transparent substrate and the light absorber can be eliminated almost or completely. Accordingly, it is possible to reliably reduce or prevent the occurrence of malfunctions in the transistor due to irregularly reflected light or stray light.

  In the aspect in which the light absorber described above has the same refractive index as that of the transparent substrate, the light absorber is made of a black resin.

  According to this aspect, the light absorber and the transparent substrate can be easily bonded, and the light is emitted from the back surface of the transparent substrate while almost or completely eliminating light reflection at the interface between the transparent substrate and the light absorber. Light can be absorbed reliably. Therefore, it is possible to reliably reduce or prevent the occurrence of malfunctions in the transistor due to diffusely reflected light or stray light. The term “black” according to the present invention is intended to be a color close to black so that at least visible light can be absorbed almost completely or practically. This includes the case of black.

  In another aspect of the second electro-optical device according to the invention, the transparent substrate is a sapphire substrate.

  According to this aspect, the single crystal silicon film can be formed on the transparent substrate made of the sapphire substrate, and the transistor can be formed from the single crystal silicon film. Therefore, it is possible to improve performance such as the operation speed of the transistor as compared with the case where the transistor is formed from a polysilicon film stacked over a glass substrate, for example.

  In order to solve the above-described problems, an electronic apparatus according to the present invention includes the first or second electro-optical device (including various aspects) according to the present invention described above.

  According to the electronic apparatus of the present invention, since the first or second electro-optical device according to the present invention described above is provided, the occurrence of malfunction in the transistor is reduced, and the projection display device having high reliability, Various electronic devices such as a television, a mobile phone, an electronic notebook, a word processor, a viewfinder type or a monitor direct-view type video tape recorder, a workstation, a video phone, a POS terminal, and a touch panel can be realized. In addition, as an electronic apparatus of the present invention, for example, an electrophoretic device such as electronic paper, an electron emission device (Field Emission Display and Conduction Electron-Emitter Display), and a display device using these electrophoretic device and electron emission device are realized. Is also possible.

  The operation and other advantages of the present invention will become apparent from the best mode for carrying out the invention described below.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, an active matrix driving type liquid crystal device with a built-in driving circuit, which is an example of the electro-optical device of the present invention, is taken as an example.
<First Embodiment>
The liquid crystal device according to the first embodiment will be described with reference to FIGS.

  First, the overall configuration of the liquid crystal device according to the present embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view showing the configuration of the liquid crystal device according to this embodiment, and FIG. 2 is a cross-sectional view taken along the line HH ′ of FIG.

  1 and 2, in the liquid crystal device 100 according to the present embodiment, the element substrate 10 and the counter substrate 20 are disposed to face each other. The element substrate 10 and the counter substrate 20 are each made of a transparent substrate such as a glass substrate or a quartz substrate. The element substrate 10 is an example of a “transparent substrate” according to the present invention. A liquid crystal layer 50 is sealed between the element substrate 10 and the counter substrate 20, and the element substrate 10 and the counter substrate 20 are mutually connected by a sealing material 52 provided in a seal region located around the image display region 10a. It is glued to.

  In FIG. 1, a light-shielding frame light-shielding film 53 that defines the frame area of the image display region 10a is provided on the counter substrate 20 side in parallel with the inside of the seal region where the sealing material 52 is disposed. A data line driving circuit 101 and an external circuit connection terminal 102 are provided along one side of the element substrate 10 in a region located outside the sealing region where the sealing material 52 is disposed in the peripheral region. The sampling circuit 7 is provided so as to be covered with the frame light shielding film 53 on the inner side of the seal region along the one side. The scanning line driving circuit 104 is provided so as to be covered with the frame light-shielding film 53 inside the seal region along two sides adjacent to the one side. On the element substrate 10, vertical conduction terminals 106 for connecting the two substrates with the vertical conduction material 107 are disposed in regions facing the four corner portions of the counter substrate 20. Thus, electrical conduction can be established between the element substrate 10 and the counter substrate 20.

  On the element substrate 10, lead wirings 90 are formed for electrically connecting the external circuit connection terminals 102 to the data line driving circuit 101, the scanning line driving circuit 104, the vertical conduction terminal 106, and the like.

  In FIG. 2, on the element substrate 10, a laminated structure in which wirings such as pixel switching transistors, scanning lines, and data lines are formed. In the image display area 10a, a reflective pixel electrode 9a that reflects incident light is provided in a matrix form on an upper layer of a pixel switching transistor, a scanning line, a data line, or the like. An alignment film is formed on the pixel electrode 9a. On the other hand, on the surface of the counter substrate 20 facing the element substrate 10, a counter electrode 21 made of a transparent material such as ITO is formed on almost the entire surface facing the plurality of pixel electrodes 9a. An alignment film is formed on the counter electrode 21. The liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several types of nematic liquid crystals are mixed, and takes a predetermined alignment state between the pair of alignment films.

  Although not shown here, on the element substrate 10, in addition to the data line driving circuit 101 and the scanning line driving circuit 104, an inspection for inspecting the quality, defects, etc. of the liquid crystal device during manufacturing or at the time of shipment. A circuit, an inspection pattern, or the like may be formed.

  1 and 2, in this embodiment, a light absorber 500 as an example of the “light absorber” according to the present invention is provided on the side of the element substrate 10 that does not face the liquid crystal layer 50. The light absorber 500 is bonded to the element substrate 10 through an adhesive layer 600 made of an adhesive. The adhesive layer 600 is an example of the “adhesive” according to the present invention. The light absorber 500 and the adhesive layer 600 will be described in detail later.

  Next, an electrical configuration of the pixel portion of the liquid crystal device according to the present embodiment will be described with reference to FIG. FIG. 3 is an equivalent circuit diagram of the pixel portion of the liquid crystal device according to this embodiment.

  As shown in FIG. 3, each of a plurality of pixels formed in a matrix that forms the image display region 10a of the liquid crystal device 100 includes a pixel electrode 9a and a transistor 30 for controlling the switching of the pixel electrode 9a. The formed data line 6 a to which an image signal is supplied is electrically connected to the source of the transistor 30. The image signals VS1, VS2,..., VSn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. Good.

  Further, the scanning line 11a is electrically connected to the gate of the transistor 30, and the scanning signals G1, G2,..., Gm are applied to the scanning line 11a in a pulse-sequential manner in this order at a predetermined timing. It is configured. The pixel electrode 9a is electrically connected to the drain of the transistor 30, and the image signal VS1, VS2,... Supplied from the data line 6a is closed by closing the switch of the transistor 30 as a switching element for a certain period. VSn is written at a predetermined timing.

  Image signals VS1, VS2,..., VSn written to the liquid crystal through the pixel electrode 9a are constant between the counter electrode 21 (see FIG. 2) formed on the counter substrate 20 (see FIG. 2). Hold for a period. The liquid crystal modulates light and enables gradation display by changing the orientation and order of the molecular assembly depending on the applied voltage level. In the normally white mode, the transmittance for incident light is reduced according to the voltage applied in units of each pixel, and in the normally black mode, the light is incident according to the voltage applied in units of each pixel. The light transmittance is increased, and light having a contrast corresponding to the image signal is emitted from the liquid crystal device 100 as a whole.

  In order to prevent the image signal held here from leaking, a storage capacitor 70 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode. One electrode of the storage capacitor 70 is connected to the drain of the transistor 30 in parallel with the pixel electrode 9a, and the other electrode is connected to a capacitor wiring 400 with a fixed potential so as to have a constant potential.

  Next, a specific configuration of the pixel portion that realizes the above-described operation will be described with reference to FIGS. FIG. 4 is a plan view of the pixel portion of the liquid crystal device according to this embodiment. 5 is a cross-sectional view taken along line AA ′ of FIG. In FIGS. 4 and 5, the scale of each layer / member is different for each layer / member so as to have a size recognizable on the drawing.

  4 and 5, each circuit element of the pixel portion described above with reference to FIG. 3 is structured on the element substrate 10 as a patterned conductive film. Each circuit element includes, in order from the bottom, a first layer including the transistor 30 and the capacitor wiring 400, a second layer including the data line 6a and the storage capacitor 70, and a third layer including the pixel electrode 9a. In addition, an interlayer insulating film 41 is provided between the first layer and the second layer, and an interlayer insulating film 42 is provided between the second layer and the third layer to prevent the above-described elements from being short-circuited.

(Structure of the first layer-transistor, capacitor wiring, etc.)
As shown in FIG. 5, the first layer includes the transistor 30 and the capacitor wiring 400.

  4 and 5, the transistor 30 includes an insulating film 4 including a gate electrode 3a, a semiconductor layer 1a, and a gate insulating film that insulates the gate electrode 3a from the semiconductor layer 1a.

  As shown in FIG. 4, the gate electrode 3a is formed as a portion of the scanning line 11a extending along the X direction and overlapping with the channel region 1a ′ in the semiconductor layer 1a. The gate electrode 3a (that is, the scanning line 11a) is made of, for example, conductive polysilicon. The gate electrode 3a is at least one of refractory metals such as titanium (Ti), chromium (Cr), tungsten (W), tantalum (Ta), and molybdenum (Mo) in addition to conductive polysilicon. It can be formed of a single metal containing, an alloy, metal silicide, polysilicide, or a laminate thereof.

  The semiconductor layer 1a is made of, for example, polysilicon, and includes a channel region 1a ′, a low concentration source region 1b and a low concentration drain region 1c, and a high concentration source region 1d and a high concentration drain region 1e. The transistor 30 preferably has an LDD structure. However, the transistor 30 may have an offset structure in which no impurity is implanted into the low-concentration source region 1b and the low-concentration drain region 1c. A self-aligned type in which a high concentration source region and a high concentration drain region are formed by implanting the concentration may be used.

  The transistor 30 according to the present embodiment is a top gate type, but may be a bottom gate type.

  The capacitor wiring 400 is formed of the same film as the scanning line 11a (that is, the same film as the gate electrode 3a), that is, for example, conductive polysilicon. As shown in FIG. 4, the capacitor wiring 400 and the scanning line 11a are divided and formed along the X direction.

(Configuration of the second layer-data line, storage capacity, etc.)
An interlayer insulating film 41 is formed on the entire surface of the first layer, and a data line 6a and a storage capacitor 70 are formed thereon as a second layer.

  The interlayer insulating film 41 is made of, for example, NSG (non-silicate glass). Therefore, light can be transmitted. In addition, for the interlayer insulating film 41, silicate glass such as PSG (phosphorus silicate glass), BSG (boron silicate glass), BPSG (boron phosphorus silicate glass), silicon nitride, silicon oxide, or the like can be used. The surface of the interlayer insulating film 41 is subjected to a planarization process such as a chemical polishing process (CMP), a polishing process, a spin coat process, or a recess embedding process. Therefore, the unevenness caused by these elements on the lower layer side is removed, and the surface of the interlayer insulating layer 41 is flattened.

  The data line 6a is formed from a metal film such as aluminum. For example, the data line 6a may be formed as a three-layer film of aluminum, titanium nitride, and silicon nitride in order from the bottom. The data line 6a is wired so as to extend along the Y direction in FIG. 4 when viewed in plan on the element substrate 10, and from the main line portion along the Y direction, the high concentration source region 1d of the transistor 30 and It has extension part 6aa extended so that it may overlap. The data line 6a is electrically connected to the high-concentration source region 1d of the transistor 30 through the contact hole 81 opened in the interlayer insulating film 41 in the extending portion 6aa.

  As shown in FIG. 4, the storage capacitor 70 is formed for each pixel so as to overlap the pixel electrode 9a when viewed in plan on the element substrate 10. That is, the storage capacitor 70 is formed in a region where the pixel electrode 9a is formed for each pixel. The storage capacitor 70 is formed by laminating a lower electrode 72, a dielectric film 75, and an upper electrode 71 in this order.

  The lower electrode 72 is formed of the same film as the data line 6a, that is, a metal film such as aluminum. The lower electrode 72 is electrically connected to the high-concentration drain region 1 e of the transistor 30 through a contact hole 83 opened in the interlayer insulating film 41. Further, the lower electrode 72 is electrically connected to the pixel electrode 9a through a contact hole 85 opened in an interlayer insulating film 42 described later. That is, the pixel electrode 9a and the high-concentration drain region 1e of the transistor 30 are relay-connected via the lower electrode 72.

  The dielectric film 75 is formed of a silicon nitride film having a high dielectric constant. The dielectric film may be formed of a single layer film or a multilayer film such as hafnium oxide (HfO2), alumina (Al2O3), and tantalum oxide (Ta2O5).

  The upper electrode 71 is formed from a metal film such as aluminum. The upper electrode 71 may be made of, for example, conductive polysilicon. The upper electrode 71 is electrically connected to the capacitor wiring 400 through a contact hole 84 that is opened through the dielectric film 75 and the interlayer insulating film 41.

(3rd layer configuration-pixel electrode, etc.)
An interlayer insulating film 42 is formed on the entire surface of the second layer, and a pixel electrode 9a is formed thereon as a third layer. Similar to the interlayer insulating film 42, the interlayer insulating film 42 is formed of, for example, NSG. In addition, for the interlayer insulating film 42, silicate glass such as PSG, BSG, or BPSG, silicon nitride, silicon oxide, or the like can be used. Similar to the interlayer insulating film 41, the surface of the interlayer insulating film 42 is subjected to a planarization process such as CMP.

  As shown in FIG. 4, a plurality of pixel electrodes 9a (indicated by a broken line 9a 'in FIG. 4) are arranged so that adjacent pixel electrodes 9a are not electrically short-circuited with each other. They are arranged in a matrix by being arranged with a lattice-like gap region D therebetween. The pixel electrode 9a is made of aluminum or the like, for example, and reflects incident light from above in FIG. As described above, the pixel electrode 9 a is relayed by the lower electrode 72 and is electrically connected to the high-concentration drain region 1 e of the transistor 30.

  An alignment film 61 that has been subjected to a predetermined alignment process such as a rubbing process is provided on the upper side of the pixel electrode 9a.

  As shown in FIG. 4, in the present embodiment, in particular, the plurality of transistors 30 are arranged in a region where the pixel electrode 9 a is formed, and in the lattice-shaped gap region D between adjacent pixel electrodes 9 a, Not provided. Therefore, in order to shield the plurality of transistors 30 from light, it is not necessary to provide light shielding means such as a light shielding film disposed on the upper side of the transistor 30 in the gap region D. Therefore, compared with the case where the light shielding means is provided in the gap region D, the laminated structure on the element substrate 10 can be simplified, and the number of steps in the manufacturing process can be reduced. As a result, the manufacturing cost for manufacturing the liquid crystal device 100 can also be reduced.

  The above is the configuration of the pixel portion on the element substrate 10 side.

  On the other hand, the counter substrate 20 is provided with a counter electrode 21 on the entire surface of the counter substrate 20, and an alignment film 22 is further provided thereon (under the counter electrode 21 in FIG. 5). The counter electrode 21 is made of a transparent conductive film such as an ITO film.

  A liquid crystal layer 50 is provided between the element substrate 10 and the counter substrate 20 thus configured. The liquid crystal layer 50 is formed by enclosing liquid crystal in a space formed by sealing the peripheral portions of the element substrate 10 and the counter substrate 20 with the sealing material 52 as described above with reference to FIGS. The liquid crystal layer 50 takes a predetermined alignment state by the alignment film 61 and the alignment film 22 that have been subjected to an alignment process such as a rubbing process in a state where an electric field is not applied between the pixel electrode 9 a and the counter electrode 21. It is like that.

  The configuration of the pixel portion described above is common to each pixel portion. Such pixel portions are periodically formed in the image display region 10a (see FIG. 1).

  Next, an element substrate and a light absorber of the liquid crystal device of the present embodiment will be described with reference to FIG.

  In FIG. 5, in the present embodiment, the element substrate 10 is made of a transparent substrate such as a glass substrate or a quartz substrate, as described above.

  Here, if no measures are taken, and the element substrate 10 is made of a silicon substrate as disclosed in Patent Document 1 described above, the light enters from the gap region D between adjacent pixel electrodes 9a. Since the light is reflected on the surface of the silicon substrate, there is a possibility that irregular reflection light and stray light that are reflected at other parts in the liquid crystal device may increase. For this reason, such irregularly reflected light or stray light may reach the transistor 30 and cause malfunction in the transistor 30.

  However, in the present embodiment, in particular, since the element substrate 10 is made of a transparent substrate, light (for example, an arrow P1 in FIG. 5) incident from the gap region D between adjacent pixel electrodes 9a can be transmitted. Therefore, reflection on the surface of the element substrate 10 can be reduced. That is, the light incident from the gap region D can be released to the back surface (the lower surface in FIG. 5) side of the element substrate 10 almost without being reflected in the liquid crystal device 100. Accordingly, it is possible to reduce the occurrence of irregularly reflected light and stray light in the liquid crystal device 100. For this reason, it is possible to reduce the occurrence of malfunction in the transistor 30 due to diffused reflected light or stray light reaching the transistor 30.

  Further, particularly in the present embodiment, the light absorber 500 is adhered to the back surface of the element substrate 10 by an adhesive layer 600 made of a transparent adhesive.

  The light absorber 500 is formed as a flat plate made of aluminum that has been blackened by alumite treatment. The light absorber 500 has substantially the same planar shape as the element substrate 10 and is disposed so as to overlap the element substrate 10. The light absorber 500 may be formed of a metal material such as Cr or Ni. Therefore, light that passes through the element substrate 10 and the adhesive layer 600 can be absorbed by the light absorber 500. Therefore, it is possible to reduce or prevent the occurrence of irregular reflection light and stray light due to the light transmitted through the element substrate 10 being reflected by another member or device and entering the liquid crystal device 100 again.

  In addition, since the light absorber 500 is formed as a flat plate made of aluminum as described above, it has a higher thermal conductivity than the element substrate 10 made of, for example, a glass substrate or a quartz substrate. Therefore, heat generated during the operation of the liquid crystal device 100 can be quickly released from the liquid crystal device 100 to the outside of the device via the light absorber 500. That is, the heat dissipation of the liquid crystal device 100 can be improved. Accordingly, it is possible to suppress a decrease in display performance of the liquid crystal device 100 that may occur with an increase in temperature.

  Particularly in the present embodiment, the adhesive layer 600 is formed of a transparent adhesive made of an ultraviolet curable resin having a refractive index substantially the same as the refractive index of the element substrate 10. In addition, as an adhesive agent, a photocurable resin or a thermosetting resin sensitive to light of other wavelengths can be used instead of the ultraviolet curable resin. Therefore, reflection of light that can be caused by the difference in refractive index between the element substrate 10 and the adhesive layer 600 at the interface B1 between the element substrate 10 and the adhesive layer 600 can be almost or completely eliminated. Therefore, it is possible to reduce or prevent the occurrence of malfunctions in the transistor 30 due to irregularly reflected light or stray light.

As described above, according to the liquid crystal device 100 according to the present embodiment, the element substrate 10 is formed of a transparent substrate, and the light absorber 500 is provided on the back side of the element substrate 10, so that irregularly reflected light or stray light is provided. The occurrence of malfunction in the transistor 30 due to the above can be reduced or prevented. Further, particularly in the present embodiment, the refractive index of the adhesive layer 600 that bonds the element substrate 10 and the light absorber 500 is substantially the same as the refractive index of the element substrate 10, so that reflection on the back surface of the element substrate 10 is performed. Can be reduced or prevented.
Second Embodiment
Next, a liquid crystal device according to a second embodiment will be described with reference to FIG. FIG. 6 is a sectional view having the same concept as FIG. 5 in the second embodiment. In FIG. 6, the same reference numerals are given to the same components as the components according to the first embodiment shown in FIGS. 1 to 5, and description thereof will be omitted as appropriate.

  As shown in FIG. 6, the liquid crystal device 200 according to the second embodiment includes an element substrate 12 in place of the element substrate 10 in the first embodiment described above, and instead of the transistor 30 in the first embodiment described above. Unlike the liquid crystal device 100 according to the first embodiment described above, the other points are provided in that the transistor 32 is provided and the light absorber 520 is provided instead of the light absorber 500 in the first embodiment described above. The configuration is substantially the same as that of the liquid crystal device 100 according to the first embodiment described above.

  Particularly in the present embodiment, the element substrate 12 is made of a sapphire substrate. Therefore, the element substrate 12 can transmit the light (arrow P1 in FIG. 6) incident from the gap region D between the adjacent pixel electrodes 9a, similarly to the element substrate 10 in the first embodiment described above. . Therefore, reflection on the surface of the element substrate 12 can be reduced. Furthermore, a semiconductor layer made of a single crystal silicon film can be formed on the element substrate 12. That is, in this embodiment, since the element substrate 12 is made of a sapphire substrate, the semiconductor layer 2a constituting the transistor 32 is made of a single crystal silicon film. Therefore, performance such as the operation speed of the transistor 32 can be improved as compared with the case where the semiconductor layer 2a is formed of a polysilicon film.

  The semiconductor layer 2a includes a channel region 2a ′, a low concentration source region 2b and a low concentration drain region 2c, and a high concentration source region 2d and a high concentration drain region 2e. The transistor 32 may have an offset structure in which impurities are not implanted into the lightly doped source region 1b and the lightly doped drain region 1c, or impurities are implanted at a high concentration by using the gate electrode 3a as a mask. It may be a self-aligned type that forms a drain region.

Further, particularly in the present embodiment, the light absorber 520 is made of a black resin having substantially the same refractive index as that of the element substrate 12. As the black resin, a photo-curing resin or a thermosetting resin colored with a colorant (that is, a pigment or a dye) can be used. Therefore, the light absorber 520 can be easily bonded to the element substrate 12 by the portion in contact with the element substrate 12 serving as an adhesive, and reliably absorbs light emitted from the back surface of the element substrate 12. it can. Further, since the light absorber 520 has substantially the same refractive index as that of the element substrate 12, light reflection at the interface B2 between the element substrate 12 and the light absorber 520 can be almost or completely eliminated. In other words, the light absorber 520 has both functions of the light absorber 500 and the adhesive layer 600 in the first embodiment.
<Electronic equipment>
Next, the case where the reflective liquid crystal device, which is the above-described electro-optical device, is applied to an electronic device will be described. Here, as an electronic apparatus according to the present invention, a projection type liquid crystal projector is taken as an example. FIG. 7 is a schematic sectional view of the projection type liquid crystal projector according to the present embodiment.

  In FIG. 7, a liquid crystal projector 1100 is constructed as a multi-plate color projector using three liquid crystal light valves 100R, 100G, and 100B for RGB. Each of the liquid crystal light valves 100R, 100G, and 100B uses the above-described reflective liquid crystal device.

  As shown in FIG. 7, in the liquid crystal projector 1100, when projection light is emitted from a lamp unit 1102 of a white light source such as a metal halide lamp, two mirrors 1106, two dichroic mirrors 1108, and three polarization beam splitters (PBS) ) 1113 is divided into light components R, G, and B corresponding to the three primary colors of RGB and led to the liquid crystal light valves 100R, 100G, and 100B corresponding to the respective colors. At this time, in order to prevent light loss in the optical path, a lens may be appropriately provided in the middle of the optical path. The light components corresponding to the three primary colors modulated by the liquid crystal light valves 100R, 100G, and 100B are combined by the cross prism 1112 and then projected as a color image on the screen 1120 via the projection lens 1114.

  Since light corresponding to the primary colors of R, G, and B is incident on the liquid crystal panels 1110R, 1110B, and 1110G by the dichroic mirror 1108 and the polarization beam splitter 1113, there is no need to provide a color filter.

  In addition to the electronic device described with reference to FIG. 7, a mobile personal computer, a mobile phone, a liquid crystal television, a viewfinder type, a monitor direct view type video tape recorder, a car navigation device, a pager, and an electronic notebook , Calculators, word processors, workstations, videophones, POS terminals, devices with touch panels, and the like. Needless to say, the present invention can be applied to these various electronic devices.

  In addition to the liquid crystal device described in the above embodiment, the present invention includes a plasma display (PDP), a field emission display (FED, SED), an organic EL display, a digital micromirror device (DMD), an electrophoresis device, and the like. It is also applicable to.

  The present invention is not limited to the above-described embodiment, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification, and an electro-optical device with such a change, In addition, an electronic apparatus including the electro-optical device is also included in the technical scope of the present invention.

It is a top view which shows the whole structure of the liquid crystal device which concerns on 1st Embodiment. It is the HH 'sectional view taken on the line of FIG. 2 is an equivalent circuit diagram of a pixel portion of the liquid crystal device according to the first embodiment. FIG. It is a top view of the pixel part of the liquid crystal device concerning a 1st embodiment. FIG. 5 is a cross-sectional view taken along line AA ′ in FIG. 4. It is sectional drawing with the same meaning as FIG. 5 in 2nd Embodiment. 1 is a schematic cross-sectional view of a liquid crystal projector as an example of an electronic apparatus to which an electro-optical device is applied.

Explanation of symbols

  6a ... Data line, 9a ... Pixel electrode, 10 ... Element substrate, 10a ... Image display area, 11a ... Scanning line, 20 ... Counter substrate, 21 ... Counter electrode, 30 ... Transistor, 50 ... Liquid crystal layer, 52 ... Sealing material, 53 ... Frame light shielding film, 70 ... Storage capacitor, 71 ... Upper electrode, 72 ... Lower electrode, 75 ... Dielectric film, 101 ... Data line driving circuit, 102 ... External circuit connection terminal, 104 ... Scanning line driving circuit, 106 ... Vertical conduction terminal, 400 ... capacitive wiring, 500 ... light absorber, 600 ... adhesion layer

Claims (4)

A quartz substrate;
A light reflective pixel electrode provided on the quartz substrate,
Data lines,
A high-concentration drain region electrically connected to the pixel electrode and electrically connected to the data line , provided on the lower side of the pixel electrode on the quartz substrate and overlapping the pixel electrode A high concentration source region, a channel region located between the high concentration drain region and the high concentration source region, a low concentration drain region located between the high concentration drain region and the channel region, A transistor having a semiconductor layer including a low-concentration source region located between the high-concentration source region and the channel region ;
A light absorber made of a photo-curing resin or a thermo-curing resin , which is provided on a surface opposite to the surface on which the pixel electrode is provided in the quartz substrate, absorbs light, and is colored with a colorant ;
Have
It said light absorber have a same refractive index as the quartz substrate,
The data line is
A main line portion formed along the semiconductor layer;
An extension formed so as to overlap the high-concentration source region from the main line portion;
Have
In plan view, the channel region is disposed inside the pixel electrode from the main line part and the extension part,
The electro-optical device , wherein the low-concentration drain region is disposed inside the pixel electrode from the low-concentration source region in plan view . The electro-optical device according to claim 1 , wherein the light absorber has a thermal conductivity higher than that of the quartz substrate.   The electro-optical device according to claim 1, wherein the light absorber is made of a black resin. An electronic apparatus comprising the electro-optical device according to any one of claims 1 to 3 .

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