JP5024286B2 - Position detection device and vertical / horizontal detection sensor - Google Patents

Description

  The present invention is used in various electronic devices and sensors. For example, a magnetic detection circuit used in various applications for controlling the device by detecting the posture of various electronic devices, a magnetic sensor using the magnetic detection circuit, and the like The present invention relates to a position detection device and a vertical / horizontal detection sensor for a magnetic sphere.

  In a magnetic sensor using a magnetoresistive element, a magnetic detection circuit in which the magnetoresistive elements are electrically connected in a full bridge shape is known. An example of such a magnetic detection circuit is described in Patent Document 1, for example.

  Such a magnetic detection circuit utilizes the change of the resistance value by the magnetism applied to the magnetoresistive element. More specifically, the change of the resistance value is the change of the potential on the magnetic circuit. It is taken out as.

  When using a magnetoresistive element to detect the potential of a magnetic detection circuit including the magnetoresistive element, the resistance value of the magnetoresistive element in the initial state is very important. For example, in the case of the full bridge circuit described in Patent Document 1, there is no problem if the resistance values in the initial state of all the magnetoresistive elements are equal, but if these resistance values are not well balanced, false detection will be caused. I will.

  Therefore, in consideration of such a case, it is conceivable to adjust the resistance value in the initial state, which is performed not in the field of the magnetic detection circuit but in the field of the distortion detection circuit. Further, for the purpose of correcting the temperature characteristics, an adjustment resistor is provided in series or in parallel with each of the four strain resistance elements constituting the full bridge circuit, and the resistance value of the adjustment resistor is adjusted. Thus, a technique for adjusting the potential in the initial state is known. An example of such a technique is described in Patent Document 2, for example.

  Similarly, in the field of distortion detection circuits, without providing an adjustment resistor, an amount for correcting the output from the full bridge circuit is obtained in advance, and this correction amount is stored in a memory for digital signal processing. A technique for correcting an output value using a technique is also known. An example of such a technique is described in Patent Document 3, for example.

  Furthermore, in the field of magnetic sensors, sensors that detect the inclination of equipment using a magnetoresistive element and a magnetic sphere are also known. An example of such a sensor is described in Patent Document 4, for example.

  Sensors that detect vertical and horizontal postures of electronic devices and the like as application examples of such magnetic sensors are called vertical and horizontal detection sensors and posture sensors. Such a sensor utilizes the fact that the magnetic sphere moves due to its own weight. Since the magnetism changes depending on the position of the magnetic sphere, the position of the magnetic body is detected by detecting the magnetism with a magnetic detector, thereby detecting the attitude of the electronic device or the like.

  In such a sensor, as a technique of the tilt sensor, a technique is known in which a magnetic sphere is disposed on a bowl-shaped rolling surface and magnetism is applied to the rolling surface substantially perpendicularly. Among such techniques, a technique of providing four magnetic detectors is also known. An example of such a technique is described in Patent Document 4, for example. There is also known a technique in which a magnet and a magnetic detector are arranged in order from the magnetic sphere. An example of such a technique is described in Patent Document 5, for example.

  Similarly, the tilt sensor technology has a structure in which a magnetic sphere is suspended by a magnetic force on the lower side of a magnet, a magnet and a magnetic detector are arranged in order from the magnetic sphere, and four magnetic detectors are provided. The technology provided is also known. An example of such a technique is described in Patent Document 6, for example.

  Further, as an attitude sensor for detecting whether the electronic apparatus is placed vertically or horizontally, a technique for forming a recess on a rolling surface in one longitudinal direction or one lateral direction to be detected is also known. An example of such a technique is described in Patent Document 7, for example.

  However, when the above-described conventional method for adjusting the potential of the initial state using the adjustment resistor is applied to the magnetic detection circuit, the adjustment resistor is connected in series or in parallel with the magnetoresistive element, so that the sensitivity of the magnetic detection circuit is reduced. There was a problem.

  In addition, in the case of the method of correcting the output value using the above-described conventional digital signal processing technology, a memory for storing the correction amount and an arithmetic circuit for correcting the output value are required, and the circuit becomes complicated. There was a problem that it would end up.

  In addition, in the conventional magnetic sphere position detection device and vertical / horizontal detection sensor, since the magnet applies magnetism in a direction substantially perpendicular to the rolling surface, the magnetic field affecting the magnetic sphere is strong, The magnetic detector detects a change in magnetism even with respect to a change in the position of a magnetic sphere located sufficiently away from the magnet. Therefore, there is an advantage that this can be detected. On the other hand, there is a side face that the magnetic sphere is pulled to the magnet side by the magnetism from the magnet, which causes a problem that the detection accuracy is lowered.

In particular, if the position of the magnetic sphere position detection device or the vertical / horizontal detection sensor is reduced, the magnetic sphere also becomes smaller and lighter. However, since the magnetic sphere moves by its own weight, the magnetic field from the magnet is strong. The free movement of the magnetic sphere will be adversely affected. For this reason, it has been difficult to miniaturize the position detecting device of the magnetic sphere, the vertical / horizontal detection sensor, and the like.
Special Table 2000-516724 JP 2000-221084 A JP 2000-121463 A JP 2003-287421 A Japanese Patent Laid-Open No. 11-23267 JP 2002-277243 A JP 2001-304858 A

The present invention has a problem that the detection accuracy is reduced due to the magnetic sphere being pulled to the magnet side by the magnetism from the magnet, and downsizing the position detection device and the vertical / horizontal detection sensor of the magnetic sphere. and it provides a position detecting device and the vertical and horizontal sensor of magnetic material elements spheres that solve the problem of difficulty.

For this purpose, the present invention provides a magnetic body, a container having an inner space for accommodating the magnetic body and having an inner wall on which the magnetic body can roll or slide, a magnetic generator disposed outside the inner space, A magnetic detector for detecting magnetism from the generator, and the magnetic generator is arranged so that magnetism is generated in a direction parallel to the inner wall of the nearest container.

  According to this configuration, since the magnetism generator is arranged so that magnetism is generated in a direction parallel to the inner wall of the nearest container, the magnetism of the magnetism generator can be weakened. The influence on the movement of can be reduced. Therefore, the magnetic body can be reduced in size and weight, and the entire apparatus can be reduced in size.

The magnetic sphere position detection device of the present invention is provided outside the internal space, the magnetic sphere, a container having an internal space for accommodating the magnetic sphere and having an inner wall on which the magnetic sphere can roll. And a magnet that applies magnetism in a direction parallel to the nearest inner wall of the container, and a magnetic detector that is located near the magnet and opposite to the inner wall and detects magnetism from the magnet It is. According to this configuration, the magnetism is applied in a direction parallel to the nearest inner wall of the container having an inner wall on which the magnetic sphere can roll, and the magnet and the magnetic detector are arranged in this order from the inner wall of the container. Therefore, the magnetism of the magnet can be weakened. Thereby, since the influence on the magnetic sphere can be reduced, the magnetic sphere can be reduced in size and weight, and the entire apparatus can be reduced in size.

  The magnetic sphere position detecting device according to the present invention is a thin film magnet in which a magnetic detector is formed of a magnetoresistive element formed on a substrate, and a magnet is formed on the magnetoresistive element via an insulating layer. It is composed of According to this configuration, since the magnetoresistive element and the thin film magnet are integrally formed on the substrate, variation in characteristics of the magnetoresistive element can be reduced.

  The vertical / horizontal detection sensor of the present invention is a vertical / horizontal detection sensor including a magnetic sphere position detection device. The internal space of the container is divided into four detection spaces extending in four directions at intervals of 90 ° in the same plane. It is configured in a shape including two side inner walls that are positioned in a direction perpendicular to a plane including the four detection spaces and that face each other. At the same time, a magnet and a magnetic detector are provided outside each of the four detection spaces, and the detection space is detected by detecting a detection space in which the magnetic sphere enters due to its own weight among the four detection spaces. It is detected that it is below the three detection spaces. According to this configuration, the entire apparatus can be reduced in size.

  In addition, the vertical / horizontal detection sensor of the present invention is provided with one magnet that exerts magnetism on the four detection spaces in place of the magnets provided outside the four detection spaces. According to this configuration, since one magnet that exerts magnetism in the four detection spaces is provided, the labor at the time of manufacture is simplified as compared with the case where four magnets are arranged. Further, when the magnet is formed of a thin film, the mask shape can be simplified, so that the cost can be reduced.

  In addition, the vertical / horizontal detection sensor according to the present invention particularly includes a magnetic detector composed of a magnetoresistive element formed on a substrate and a magnet composed of a thin film magnet formed on the magnetoresistive element via an insulating layer. It is. According to this configuration, since the magnetoresistive element and the thin film magnet are integrally formed on the substrate, variation in characteristics of the magnetoresistive element can be reduced.

  In addition, the vertical / horizontal detection sensor according to the present invention particularly includes a container including a substrate and a housing having a recess capable of accommodating a magnetic sphere and made of a nonmagnetic material so as to cover the substrate, and the inner wall of the container. A part thereof is constituted by a protective film covering the magnetoresistive element formed on the substrate. According to this configuration, since the thin film magnet formed on the magnetoresistive element through the insulating layer can be brought closer to the inner wall of the container, the magnetism of the thin film magnet can be weakened.

  In the aspect detection sensor of the present invention, in particular, the housing is formed of a resin material containing a conductive material or a conductive metal material, and the housing is electrically connected to the ground. According to this configuration, since the housing can be prevented from being charged, it is possible to prevent the malfunction of the vertical / horizontal detection sensor due to this.

  In addition, the vertical / horizontal detection sensor of the present invention is particularly configured such that two side inner walls have a shape having a depression in the center. According to this configuration, even when the vertical / horizontal detection sensor is in a lying state in which it is neither in a vertical position nor in a horizontal position, or in a state in which the lying state is rotated 180 degrees and turned over, i.e. Detection can be prevented and stable detection can be performed.

  In addition, the vertical / horizontal detection sensor of the present invention particularly has an inner wall located between any one detection space among the four detection spaces and another detection space adjacent to the one detection space, with a convex protrusion. It is configured to have a shape. According to this configuration, since the convex protrusion is formed, the magnetic sphere moves when the vertical / horizontal detection sensor in the vertical or horizontal state is rotated clockwise and counterclockwise. Can have hysteresis. Thereby, so-called chattering (multiple detection) in the detection result can be prevented.

  In addition, the vertical / horizontal detection sensor of the present invention is particularly configured such that the magnetic sphere has a relative initial permeability of 5000 or more and a coercive force of 15 A / m or less. According to this configuration, since the relative initial permeability is configured to be 5000 or more, detection is possible even with a magnet having weak magnetism. Further, since the holding force is configured to be 15 A / m or less, the magnetic sphere is less likely to be magnetized, thereby preventing erroneous detection.

  As described above, the position detection device for a magnetic sphere of the present invention includes a magnetic sphere, a container having an inner space for accommodating the magnetic sphere and having an inner wall on which the magnetic sphere can roll, A magnet that is provided outside and applies magnetism in a direction parallel to the nearest inner wall of the container; and a magnetic detector that is located near the magnet and opposite to the inner wall and that detects magnetism from the magnet It has. Therefore, the entire apparatus can be reduced in size.

  The vertical / horizontal detection sensor according to the present invention is a vertical / horizontal detection sensor including a magnetic sphere position detection device, and the internal space of the container is divided into four detection spaces extending in four directions at intervals of 90 ° in the same plane. The two side walls are positioned in a direction perpendicular to the plane including the four detection spaces and are opposed to each other, and a magnet and a magnetic detector are provided outside the four detection spaces, respectively. By detecting the detection space in which the magnetic sphere enters due to its own weight among the four detection spaces by the magnetic detector, it is detected that the detection space is below the other three detection spaces. Therefore, it is possible to provide a vertical / horizontal detection sensor capable of downsizing the entire apparatus.

The magnetic body position detection device of the present invention is arranged outside the internal space, the magnetic body, a container having an internal space for accommodating the magnetic body and having an inner wall on which the magnetic body can roll or slide. A magnet generator and a magnet detector for detecting magnetism from the magnet generator are arranged, and the magnet generator is arranged so that magnetism is generated in a direction parallel to the inner wall of the nearest container, and the magnet detector is sandwiched between the magnet generator A first magnetic generator and a second magnetic generator are provided, and the first magnetic generator and the second magnetic generator are configured such that different poles face each other. According to this configuration, since the magnetism generator is arranged so that magnetism is generated in a direction parallel to the inner wall of the nearest container, the magnetism of the magnetism generator can be weakened. The influence on the movement of can be reduced. Therefore, the magnetic body can be reduced in size and weight, and the entire apparatus can be reduced in size. Furthermore, since the magnetism penetrating the magnetic detector is emitted from one of the first magnetic generator and the second magnetic generator and reaches the other, the magnetism is efficiently applied to the magnetic detector. be able to. As a result, it is possible to increase the change in magnetism penetrating the magnetic detector, so that the detection output can be increased.

  In addition, the magnetic body position detection apparatus of the present invention particularly comprises a magnetic body composed of a spherical magnetic body sphere. According to this configuration, since the magnetic body is a spherical magnetic body sphere, the frictional force when moving in the internal space can be reduced. As a result, since the magnetic sphere moves smoothly in the internal space, it is possible to obtain an excellent detection follow-up property.

  The magnetic body position detecting apparatus of the present invention includes a substrate on which a magnetic detector and a magnetic generator are formed, the magnetic detector is composed of a thin film magnetoresistive element, and the magnetic generator is a thin film magnet. It is composed of According to this configuration, since the magnetoresistive element and the thin film magnet are integrally formed on the substrate, variation in characteristics of the magnetoresistive element can be reduced.

In addition, the aspect detection sensor of the present invention includes a magnetic body, a container having an inner space for accommodating the magnetic body and having an inner wall on which the magnetic body can roll or slide, and a magnetic generator disposed outside the inner space. And a magnetic detector for detecting magnetism from the magnetic generator, and including a magnetic substance position detecting device arranged so that magnetism is generated in a direction parallel to the inner wall of the nearest container , In addition, the magnetic body is formed of a spherical magnetic body sphere, and the internal space of the container is configured to have four detection spaces extending in four directions at 90 ° intervals in the same plane. The container is configured to include two side inner walls located in a direction perpendicular to the plane including the four detection spaces and facing each other. Furthermore, a magnetic generator and a magnetic detector are respectively arranged outside the four detection spaces. Then, by detecting the detection space in which the magnetic sphere has entered due to its own weight among the four detection spaces by the magnetic detector, it is detected that the detection space is positioned below the other three detection spaces. It is a thing. According to this configuration, since the magnetic body position detecting device of the present invention is included, the magnetism of the magnetic generator can be applied in a direction parallel to the inner wall of the nearest container. Thereby, since the magnetism of a magnetic generator can be weakened, the influence with respect to the movement of a magnetic body ball | bowl can be reduced. Thereby, since the magnetic sphere can be reduced in size and weight, the entire apparatus can be reduced in size.

  In addition, the vertical / horizontal detection sensor according to the present invention is one in which one magnetic generator that applies magnetism to the four detection spaces is arranged in place of the magnetic generator arranged outside the four detection spaces. According to this configuration, since one magnetic generator that applies magnetism to the four detection spaces is provided, it is easier to manufacture compared to the case where four magnetic generators are arranged. Become. Further, when the magnetic generator is formed of a thin film, the shape of the mask can be simplified, so that the cost can be reduced.

  The aspect detection sensor of the present invention includes a first magnetic generator, a second magnetic generator, a third magnetic generator, a fourth magnetic generator, a fifth magnetic generator, and a sixth magnetic generator. A seventh magnetic generator and an eighth magnetic generator, and the first magnetic detector, the second magnetic detector, the third magnetic detector and the fourth magnetic detector are arranged at each vertex of the square. It is arranged and arranged. Further, the first magnetic detector and the fourth magnetic detector are arranged on a diagonal line, and the second magnetic detector and the third magnetic detector are arranged on a diagonal line. A first magnetic generator and a second magnetic generator are provided so as to sandwich the first magnetic detector, and the first magnetic generator and the second magnetic generator are opposed to each other with different poles. Constitute. A third magnetic generator and a fourth magnetic generator are provided so as to sandwich the second magnetic detector, and the third magnetic generator and the fourth magnetic generator are arranged so that different poles face each other. Constitute. A fifth magnetic generator and a sixth magnetic generator are provided so as to sandwich the third magnetic detector, and the fifth magnetic generator and the sixth magnetic generator are arranged so that different poles face each other. Constitute. A seventh magnetic generator and an eighth magnetic generator are provided so as to sandwich the fourth magnetic detector, and the seventh magnetic generator and the eighth magnetic generator are opposed to each other with different poles. It is composed. According to this configuration, since the magnetism penetrating the first to fourth magnetic detectors is generated from one of the two adjacent magnetic generators and reaches the other, the magnetic detector can be efficiently performed. Magnetism can be applied. As a result, the magnetic change to the magnetic detector can be increased, so that the detection output can be increased.

  In addition, the vertical / horizontal detection sensor according to the present invention particularly includes the second magnetic generator and the third magnetic generator disposed between the first magnetic detector and the second magnetic detector, and the sixth magnetic generator. And a seventh magnetic generator are arranged between the third magnetic detector and the fourth magnetic detector. According to this configuration, the first magnetic detector and the second magnetic detector, and the third magnetic detector and the fourth magnetic detector are electrically connected in series, respectively, and these two series are connected in series. In a full bridge circuit in which circuits are connected in parallel, the relationship between the first magnetic detector and the surrounding magnetic generator is the same as the relationship between the second magnetic detector and the surrounding magnetic generator. For this reason, it is possible to reduce variations in temperature characteristics between the first magnetic detector and the second magnetic detector. In addition, since the relationship between the third magnetic detector and the fourth magnetic detector is the same, an excellent temperature characteristic as a vertical / horizontal detection sensor can be obtained.

  The vertical / horizontal detection sensor according to the present invention is particularly configured such that the second magnetic generator, the third magnetic generator, the sixth magnetic generator, and the seventh magnetic generator are each formed as one magnetic generator. It is. According to this configuration, the number of magnetic generators can be reduced.

  The vertical / horizontal detection sensor of the present invention is particularly arranged between the second magnetic detector and the third magnetic detector with the fourth magnetic generator and the fifth magnetic generator as one magnetic generator. In addition, the first magnetic generator, the second magnetic generator, the seventh magnetic generator, and the eighth magnetic generator are parallel to the arrangement direction of the second magnetic detector and the third magnetic detector, respectively. It is arranged and configured. According to this configuration, the number of magnetic generators can be reduced.

  In addition, the vertical / horizontal detection sensor of the present invention particularly includes the first magnetic detector to the fourth magnetic detector, each of which is composed of a thin film first magnetoresistive element to a fourth magnetoresistive element, and the first magnetic detector. The 8th magnetic generator from the generator is comprised from the 1st thin film magnet to the 8th thin film magnet, respectively. According to this configuration, since the magnetoresistive element and the thin film magnet are integrally formed on the substrate, variation in characteristics of the magnetoresistive element can be reduced.

  In addition, the aspect detection sensor of the present invention is particularly closer to the inner wall of the container than the layer in which the first to eighth thin film magnets and the first to fourth magnetoresistive elements are formed. Is formed. According to this configuration, since the eighth thin film magnet can be brought closer to the inner wall of the container from the first thin film magnet, the magnetism from the first thin film magnet to the eighth thin film magnet can be weakened. Thereby, since the influence on the movement of the magnetic sphere can be further reduced, the magnetic sphere can be further reduced in size and weight, thereby further reducing the vertical and horizontal detection sensor.

  In addition, the vertical / horizontal detection sensor according to the present invention is particularly formed by forming the first thin film magnet to the eighth thin film magnet on the same plane as the layer on which the first magnetoresistive element to the fourth magnetoresistive element are formed. It is. According to this configuration, since the first thin film magnet to the eighth thin film magnet and the first magnetoresistive element to the fourth magnetoresistive element are formed in the same plane, the vertical / horizontal detection sensor can be thinned. It will be.

  In addition, in the vertical / horizontal detection sensor of the present invention, the container is particularly constituted by a housing having a recess for accommodating a magnetic sphere and made of a nonmagnetic material so as to cover the substrate. At the same time, a part of the inner wall of the container is protected to cover one or both of the first to fourth magnetoresistive elements and the first to eighth thin film magnets formed on the substrate. It is composed of a film. According to this configuration, since the thin film magnet formed on the magnetoresistive element through the insulating layer can be brought closer to the inner wall of the container, the magnetism of the thin film magnet can be weakened.

  In addition, in the aspect detection sensor of the present invention, the housing is formed of a resin material containing a conductive material or a metal material having conductivity, and is electrically connected to the ground. According to this configuration, since the housing can be prevented from being charged, it is possible to prevent the malfunction of the vertical / horizontal detection sensor due to this.

  In addition, the vertical / horizontal detection sensor according to the present invention is particularly configured such that two side inner walls are formed in a shape having a depression at the center. According to this configuration, even if the vertical / horizontal detection sensor is in a laid state in which it is neither in a vertical position nor in a horizontal position, or in a state in which the laid state is rotated 180 ° and turned upside down, that is, in a supine state or a lying state, false detection is performed. Can be prevented, and stable detection can be performed.

  In addition, the vertical / horizontal detection sensor of the present invention particularly has an inner wall located between any one detection space among the four detection spaces and another detection space adjacent to the one detection space, with a convex protrusion. It is configured to have a shape. According to this configuration, since the convex protrusion is formed, the magnetic sphere moves when the vertical / horizontal detection sensor in the vertical or horizontal state is rotated clockwise and counterclockwise. Can have hysteresis. Thereby, so-called chattering (multiple detection) in the detection result can be prevented.

  In addition, in the aspect sensor of the present invention, the magnetic material is particularly configured such that the relative initial permeability is 5000 or more and the coercive force is 15 A / m or less. According to this configuration, since the relative initial permeability is configured to be 5000 or more, detection is possible even with a magnet having weak magnetism. Further, since the coercive force is configured to be 15 A / m or less, the magnetic sphere is hardly magnetized. Thereby, erroneous detection can be prevented.

  In addition, the vertical / horizontal detection sensor of the present invention is such that the side inner wall farther from the magnetic detector of the two side inner walls in the four detection spaces is closer to the magnetic detector as it approaches the tip of the four detection spaces. Make the structure close to the inner wall of the side. In addition, the magnetic spheres are configured to be in contact with the two side inner walls at the front ends of the four detection spaces. According to this configuration, when the magnetic sphere enters the detection space, the magnetic sphere contacts the inner wall on the side closer to the magnetic detector, so that the magnetic sphere attracts more magnetism from the magnetic generator. Become. Thereby, since the magnetism to the magnetic detector is reduced when the magnetic sphere comes into the detection space, the detection output can be increased.

  As described above, the magnetic body position detection device of the present invention has a magnetic body, a container having an internal space for accommodating the magnetic body, and an inner wall on which the magnetic body can roll or slide, A magnetic generator disposed outside and a magnetic detector for detecting magnetism from the magnetic generator. And since the magnetic generator is arrange | positioned so that a magnetism may generate | occur | produce in the direction parallel to the inner wall of the nearest container, the magnetism of a magnetic generator can be weakened. Thereby, since the influence with respect to the movement of a magnetic body can be reduced, the magnetic body can be reduced in size and weight, and the entire apparatus can be reduced in size.

  Next, reference examples and embodiments of the present invention will be described.

( Reference Example 1 )
1 is a circuit diagram of a magnetic detection circuit in Reference Example 1 of the present invention, FIG. 2 is a circuit diagram of a magnetic determination circuit connected to the magnetic detection circuit, and FIG. 3 is a logic diagram of a magnetic determination circuit connected to the magnetic detection circuit. It is.

  As shown in FIG. 1, the application electrode 101, the first detection electrode 102, the second detection electrode 103, the ground electrode 104, the first magnetoresistance element 105, the second magnetoresistance element 106, and the third magnetoresistance element 107 and the fourth magnetoresistive element 108 form a full bridge circuit.

  Further, the application electrode 101, the ground electrode 104, the first reference electrode 109, the second reference electrode 110, the first adjustment resistor 111, the second adjustment resistor 112, the third adjustment resistor 113, and the fourth adjustment resistor. 114 forms a full bridge circuit.

Here, the potential of the first detection electrode 102 is V ₁ , the potential of the second detection electrode 103 is V ₂ , the potential of the first reference electrode 109 is V _ref1 , and the potential of the second reference electrode 110 is V _ref2. It is said.

The first operational amplifier 115 constitutes a first comparison unit, is electrically connected to the first detection electrode 102 and the first reference electrode 109, and amplifies the differential output of V ₁ and V _ref1 . The second operational amplifier 116 constitutes a second comparison unit, is electrically connected to the second detection electrode 103 and the second reference electrode 110, and amplifies the differential output of V ₂ and V _ref2 .

  The first comparator 117 compares the positive threshold value with the output of the first operational amplifier 115. The second comparator 118 compares the negative threshold value with the output of the first operational amplifier 115. The third comparator 119 compares the positive threshold value with the output of the second operational amplifier 116. The fourth comparator 120 compares the negative threshold value with the output of the second operational amplifier 116.

  The output signal of the first signal terminal 121 connected to the output terminal of the first comparator 117 is S1, the output signal of the second signal terminal 122 connected to the output terminal of the second comparator 118 is S2, and the third The output signal of the third signal terminal 123 connected to the output terminal of the comparator 119 is S3, and the output signal of the fourth signal terminal 124 connected to the output terminal of the fourth comparator 120 is S4.

The magnetic detection circuit in Reference Example 1 of the present invention includes an application electrode 101, a first detection electrode 102, a second detection electrode 103, a ground electrode 104, a first magnetoresistance element 105, a second magnetoresistance element 106, The third magnetoresistive element 107, the fourth magnetoresistive element 108, the first reference electrode 109, the second reference electrode 110, the first adjustment resistor 111, the second adjustment resistor 112, and the third adjustment resistor 113 , The fourth adjustment resistor 114, the first operational amplifier 115, the second operational amplifier 116, the first comparator 117, the second comparator 118, the third comparator 119, the fourth comparator 120, and the first signal terminal. A magnetic discriminating circuit including 121, a second signal terminal 122, a third signal terminal 123, and a fourth signal terminal 124 is added.

In addition, the magnetic detection circuit in Reference Example 1 of the present invention has an initial state in which no magnetic field is present, and when there is no magnetic field, the potential V ₁ of the first detection electrode 102 and the potential V _{ref1 of} the first reference electrode 109 are And the potential V ₂ of the second detection electrode 103 and the potential of the second reference electrode 110 are made equal to V _ref2 .

As described above, V ₁ = V _ref1 can be realized by changing the resistance value of one or both of the first adjustment resistor 111 and the second adjustment resistor 112. For example, a variable resistor is used for the first adjustment resistor 111 and the second adjustment resistor 112, and the resistance value of the variable resistor is adjusted. There is also a method of adjusting the resistance value by trimming the resistors of the first adjustment resistor 111 and the second adjustment resistor 112 with a laser. At this time, the resistance value of the first magnetoresistance element 105 and the resistance value of the first adjustment resistor 111 are made equal, and the resistance value of the second magnetoresistance element 106 and the resistance value of the second adjustment resistor 112 are Can be made to satisfy the relationship of V ₁ = V _ref1 . However, it is not necessary to make the respective resistance values equal in this way, and it is sufficient to satisfy the relationship of V ₁ = V _ref1 . Therefore, there are cases where only the resistance value of the first adjustment resistor 111 needs to be adjusted, and there are cases where only the resistance value of the second adjustment resistor 112 needs to be adjusted. It may be necessary to adjust the resistance values of both the first adjustment resistor 111 and the second adjustment resistor 112. Note that V ₂ = V _ref2 may be the same as this.

The operations of the magnetic detection circuit configured as described above in Reference Example 1 of the present invention and the magnetic discrimination circuit connected to the magnetic detection circuit will be described below.

  FIG. 3 shows the magnitude of the magnetic field applied to each resistance element of the first magnetoresistance element 105, the second magnetoresistance element 106, the third magnetoresistance element 107, and the fourth magnetoresistance element 108, and the first Of the potentials of the first detection electrode 102 and the second detection electrode 103 and the output signals of the first signal terminal 121, the second signal terminal 122, the third signal terminal 123, and the fourth signal terminal 124 Is shown.

  From the top to the fourth line in FIG. 3, the first magnetoresistive element 105, the second magnetoresistive element 106, the third magnetoresistive element 107, and the fourth magnetoresistive element 108 are added to the respective resistive elements. The magnitude of the magnetic field is shown. “Large” in this row indicates that a relatively large magnetic field is applied, and “small” indicates that there is no magnetic field or a relatively small magnetic field is applied.

The fifth and sixth lines from the top of FIG. 3 show V ₁ that is the potential of the first detection electrode 102 corresponding to the application state of the magnetic field to each magnetoresistive element and V that is the potential of the second detection electrode 103. ₂ , “H” indicates a state in which the potential is higher than that in the non-magnetic field state, “M” indicates a state in which the potential is the same as that in the non-magnetic field state, and “L” indicates a state in which the potential is lower than in the non-magnetic field state. Is shown.

  The seventh to tenth rows from the top of FIG. 3 are S1 that is the output signal of the first signal terminal 121, S2 that is the output signal of the second signal terminal 122, and S3 that is the output signal of the third signal terminal 123. , And S4, which is an output signal of the fourth signal terminal 124. “H” indicates the first operational amplifier in the input signal of any one of the first comparator 117, the second comparator 118, the third comparator 119, and the fourth comparator 120 connected to each signal terminal. 115 or the output from the second operational amplifier 116 is larger than a threshold value to be compared. Similarly, “L” indicates a small state.

A first magnetoresistive element 10 5 Examples of the combination of the magnetic field of the second magnetoresistive element 106, each "large", it will be be present 4 patterns considered when all cases "small", As shown in FIG. 3, when both the magnetic fields of the first magnetoresistive element 105 and the second magnetoresistive element 106 are “small” or both are “large”, S1 is “L”. S2 becomes “H” and the combination of outputs becomes the same. Therefore, the combination of the magnetic fields of the first magnetoresistive element 105 and the second magnetoresistive element 106 that can be detected is that the magnetic fields of the first magnetoresistive element 105 and the second magnetoresistive element 106 are “small”, There are only three patterns: “Large”, “Large”, “Small”, and “Large”, “Large” or “Small”, “Small”. In other words, the relationship between the first magnetoresistive element 105 and the second magnetoresistive element 106 is only three patterns when the former is larger than the latter, when the former is smaller than the latter, and when the former and the latter are equal. . However, in the device using the magnetic detection circuit in Reference Example 1 of the present invention, the magnetic fields of the first magnetoresistive element 105 and the second magnetoresistive element 106 are “large”, “large”, and “small”, respectively. , “Small” may occur only in some cases, which is useful in such a case. The same applies to the relationship between the third magnetoresistive element 107 and the fourth magnetoresistive element 108.

As described above, in the magnetic detection circuit according to Reference Example 1 of the present invention, the magnetic field has the first magnetoresistive element 105, the second magnetoresistive element 106, the third magnetoresistive element 107, and the fourth magnetoresistive element. in a state of not being applied to the 108, so that the potential of the first detection electrode 10 and second potential and the first reference electrode 109 is equal, whereas the first adjusting resistor 111 or a second adjustment resistor 112 Or, adjust both resistance values. At the same time, the resistance value of one or both of the third adjustment resistor 113 and the fourth adjustment resistor 114 is adjusted so that the potential of the second detection electrode 103 and the potential of the second reference electrode 110 are equal. is doing. Therefore, by comparing the potential of the first detection electrode 102 and the potential of the first reference electrode 109, and comparing the potential of the second detection electrode 103 and the potential of the second reference electrode 110, the magnetic detection circuit Even if the balance of the resistance values of the magnetoresistive elements is poor, it is possible to prevent erroneous detection due to this with a simple circuit.

Here, as the magnetic detection circuit in reference example 1 of the present invention, without removing the differential output between V ₁ and V _2, when performing each independently signal processing and V ₁ and V ₂ are , A reference potential for correcting V ₁ and a reference potential for correcting V ₂ are required.

When digitally correcting these V ₁ and V ₂ , a memory for storing these reference potentials in the signal processing circuit, V ₁ , V ₂ and these reference potentials, respectively, An arithmetic circuit for performing predetermined digital processing is required, which complicates the circuit and increases the cost.

In addition, since the memory and the arithmetic circuit can be used for purposes other than the signal processing of the magnetic detection circuit, they are often attached to the electronic device main body without being incorporated in the magnetic detection circuit. In such a case, the magnetic detection circuit alone cannot be adjusted to correct V ₁ and V ₂ , the magnetic detection circuit and the signal processing circuit need to be handled as a pair, The handling of the magnetic detection circuit becomes inconvenient.

On the other hand, the magnetic detection circuit in Reference Example 1 of the present invention can be adjusted to correct V ₁ and V ₂ with a single magnetic detection circuit. And it is not necessary to handle the magnetic detection circuit and the signal processing circuit as a pair, and it is not necessary to make any adjustments even if any magnetic detection circuit and any signal processing circuit are combined. is there. Furthermore, since these functions and effects can be realized with a simple circuit, the cost and size can be reduced.

Note that the magnetic discrimination circuit in Reference Example 1 of the present invention described above is an example, and is not limited to this circuit. Further, the output is a circuit from which four “H” or “L” signals are obtained, but the present invention is not limited to this, and a circuit that obtains one analog signal can also be used. Specifically, the circuit configuration can obtain a differential output of each output of the first operational amplifier 115 and the second operational amplifier 116. In this case, the change in resistance value due to the magnetism of the first magnetoresistive element 105 is equal to the change in resistance value due to the magnetism of the third magnetoresistive element 107, and the magnetism of the second magnetoresistive element 106 is equal. A method of obtaining a differential output by a full-bridge circuit that is generally widely used by making the change in resistance value due to the same and the change in resistance value due to magnetism of the fourth magnetoresistive element 108 equal. Similar output can be obtained.

In addition, the first magnetoresistive element 105, the second magnetoresistive element 106, the third magnetoresistive element 107, and the fourth magnetoresistive element 108 of the magnetic detection circuit according to Reference Example 1 of the present invention include MR (Magneto). Resistance), GMR (Grant-MR), or the like can be used.

  In addition, the first magnetoresistive element 105, the second magnetoresistive element 106, the third magnetoresistive element 107, and the fourth magnetoresistive element 108 are used. The magnetoresistive element 107, the fourth magnetoresistive element 108, the second detection electrode 103, the third adjustment resistor 113, the fourth adjustment resistor 114, and the second reference electrode 110 are deleted, and the half bridge circuit is formed. Even in the case of the above configuration, the same effect can be obtained.

  Furthermore, although the state without a magnetic field is the initial state, a state in which a bias magnetic field is applied may be the initial state.

( Reference Example 2 )
The magnetic sensor in Reference Example 2 of the present invention is basically a magnetic sensor incorporating the above-described magnetic detection circuit in Reference Example 1 of the present invention, but the state in which a bias magnetic field is applied is the initial state. .

FIG. 4 is a cross-sectional view of the main part of the magnetic sensor in Reference Example 2 of the present invention.

  As shown in FIG. 4, the main part of this magnetic sensor is formed on a plate-like substrate 125 made of alumina ceramic, a glass glaze layer 126 formed on the upper surface of the substrate 125, and the glass glaze layer 126. The magnetoresistive layer 127 includes an insulating layer 128 formed on the magnetoresistive layer 127, and a magnet layer 129 formed on the insulating layer 128. The magnet layer 129 applies a bias magnetic field to the magnetoresistive layer 127. The insulating layer 128 ensures electrical insulation between the magnetoresistive layer 127 and the magnet layer 129. An adjustment resistance layer 130 is formed on the lower surface side (back surface side) of the substrate 125, and a protective film 131 is formed so as to cover each of the magnet layer 129 and the adjustment resistance layer 130.

FIG. 4 is a schematic diagram showing the positional relationship of the magnetic sensor in the thickness direction, and does not show the actual thickness relationship. In general, the magnetoresistive layer 127 is often formed in a meandering shape (a pattern in which a plurality of patterns are folded back), and is not necessarily formed in the lateral direction on the substrate 125 as shown in FIG. Here, the magnetoresistive layer 127 is composed of the first magnetoresistive element 105, the second magnetoresistive element 106, the third magnetoresistive element 107, the fourth magnetoresistive element of the magnetic detection circuit in the reference example 1 of the present invention described above. Corresponding to the magnetoresistive element 108, the adjusting resistor layer 130 corresponds to the first adjusting resistor 111, the second adjusting resistor 112, the third adjusting resistor 113, and the fourth adjusting resistor 114 of the magnetic detection circuit. It is.

As described above, the magnetic sensor in Reference Example 2 of the present invention has the first magnetoresistive element 105, the second magnetoresistive element 106, the third magnetoresistive element 107, and the fourth magnetic sensor on the upper surface side of the substrate 125. A flat surface on which the resistance element 108 was formed was formed, and the first adjustment resistor 111, the second adjustment resistor 112, the third adjustment resistor 113, and the fourth adjustment resistor 114 were formed on the back surface side of the substrate 125. A plane is formed. Therefore, when adjusting the resistance value of one or both of the first adjustment resistor 111 and the second adjustment resistor 112 in order to _satisfy “V ₁ = V _ref1 ”, the first magnetoresistive element 105 and An adverse effect on the second magnetoresistive element 106 can be prevented. Specifically, for example, when adjusting the resistance value by laser trimming, the trimming trace by laser trimming is not limited to the first adjustment resistor 111 or the second adjustment resistor 112, and these adjustment resistors are formed. It is quite possible to extend to another layer. In this case, when the first adjusting resistor 111 and the second adjusting resistor 112 are stacked on the first magnetoresistive element 105 and the second magnetoresistive element 106, the trimming trace is the first magnetoresistive element. There is a concern that it may extend to 105 or the second magnetoresistive element 106. Furthermore, there is a concern that heat damage may occur during laser trimming. The same applies to the case of “V ₂ = V _ref2 ”.

On the other hand, the magnetic sensor in Reference Example 2 of the present invention has the first magnetoresistive element 105, the second magnetoresistive element 106, the third magnetoresistive element 107, the 4 magnetoresistive elements 108 are formed, and a first adjustment resistor 111, a second adjustment resistor 112, a third adjustment resistor 113, and a fourth adjustment resistor 114 are formed on the back surface side. Therefore, such a phenomenon can be prevented from occurring.

In the magnetic sensor of Reference Example 2 of the present invention, a bias magnetic field is applied to the first magnetoresistive element 105, the second magnetoresistive element 106, the third magnetoresistive element 107, and the fourth magnetoresistive element 108. However, depending on the magnetic detection method, the magnet layer 129 may be omitted. As the magnet layer 129, for example, a film obtained by forming a thin film of CoPt and then magnetizing it can be used.

( Embodiment 1 )
The magnetic sphere position detection device according to the first embodiment of the present invention basically incorporates the magnetic detection circuit according to the first embodiment of the present invention described above, but the state in which a bias magnetic field is applied is the initial state. It is what you are trying.

FIG. 5 is a front cross-sectional view of the main part of the position detecting device for the magnetic sphere according to Embodiment 1 of the present invention.

  In FIG. 5, the magnetic sphere 132 is made of an Fe-based alloy, and is particularly made of permalloy having a high magnetic permeability and a low coercive force. The housing 133 that accommodates the magnetic ball 132 in a rollable manner is made of a non-magnetic material. In particular, when the housing 133 is made of a resin material such as liquid crystal polymer, polyamide, or polyphenylene sulfide containing a conductive material such as carbon, it has excellent heat resistance and can be reflowed as a surface mount component. Things are obtained. Further, since polyamide is inexpensive, it is excellent in economic efficiency. The magnetic ball 132 rolls or slides on the inner wall 133a of the housing 133. A magnetic ball 132 is accommodated in the internal space 134 of the housing 133. A magnetism 135 is emitted from the magnet layer 129.

  In FIG. 5, the substrate 125, the magnetoresistive layer 127, the magnet layer 129, the adjusting resistor layer 130, and the protective film 131 constitute a part of the magnetic sensor, and have the same configuration as that shown in FIG. However, only the main components are shown and the others are omitted.

  The operation of the magnetic sphere position detection apparatus configured as described above will be described below.

  When the magnetic sphere 132 is not directly above the magnet layer 129 but at a distant location, magnetism is generated symmetrically from the north pole to the south pole of the magnet layer 129. At this time, a part of the magnetism directed downward is applied to the magnetoresistive layer 127, whereby the resistance value of the magnetoresistive element in the portion to which magnetism is applied decreases.

  Next, when the magnetic sphere 132 comes immediately above the magnet layer 129, magnetism is generated so as to be pulled by the magnetic sphere 132, so that the magnetism is not symmetrical in the vertical direction. The magnetic field on the magnetoresistive layer 127 side becomes weaker.

  At this time, the resistance value of the magnetoresistive element in the location where the magnetic sphere 132 exists in the vicinity increases, and the resistance value of the magnetoresistive element in the location where the magnetic sphere 132 does not exist in the vicinity decreases. By utilizing this principle, the position of the magnetic sphere can be detected.

In the magnetic sphere position detecting device according to the first embodiment of the present invention described above, there is only one magnetic sphere 132, and the first magnetoresistive element 105 and the second magnetoresistive element 106 are magnetic. Since the magnetic fields of both the first magnetoresistive element 105 and the second magnetoresistive element 106 do not become “large”, the magnetic field described in Reference Example 1 of the present invention is not present. It is also useful to use a determination circuit.

In addition, the magnetic sphere position detecting device according to the first embodiment of the present invention includes the magnetic sphere 132 and the internal space 134 that accommodates the magnetic sphere 132, and the magnetic sphere 132 can roll. A housing 133 having an inner wall 133a, a magnetic detection circuit according to claim 1 of the present invention provided outside the internal space 134, and a magnet layer 129 for applying a magnetism 135 to the magnetic detection circuit are provided. Therefore, even if the balance of the resistance values of the magnetoresistive elements is poor without causing a decrease in the sensitivity of the magnetic circuit, it is possible to prevent erroneous detection due to this magnetic sphere position detection device. Can be obtained.

( Embodiment 2 )
Aspect sensor in the second embodiment of the present invention takes in the position detecting device of magnetic spheres in the first embodiment of the present invention described above, is an application.

FIG. 6 is a plan sectional view of the main part of the vertical / horizontal detection sensor according to Embodiment 2 of the present invention, and FIG. 7 is an operation diagram of the vertical / horizontal detection sensor.

  6 and 7, the first detection space 136 a, the second detection space 136 b, the third detection space 136 c, and the fourth detection space 136 d are all of the internal space 134 formed inside the housing 133. These are partly formed and spread in four directions at intervals of 90 ° in the same plane. The housing 133 is positioned in a direction perpendicular to a plane including the four detection spaces, that is, the first detection space 136a, the second detection space 136b, the third detection space 136c, and the fourth detection space 136d. Two side inner walls (not shown) facing each other are provided. These two side inner walls (not shown) are located on the back side and the front side of FIG.

The indentation 137 formed in the substantially central portion of the side inner wall has a size that allows the magnetic ball 132 to be fitted therein. Each of the first magnet 138, the second magnet 139, the third magnet 140, and the fourth magnet 141 is a magnet made of a CoPt thin film. The first magnet 138, the second magnet 139, the third magnet 140, and the fourth magnet 141 have respective back surfaces of the magnets of the magnetic detection circuit according to Reference Example 1 described above. 1 magnetoresistive element 105, second magnetoresistive element 106, third magnetoresistive element 107, and fourth magnetoresistive element 108 are formed, and the thickness is the same as that shown in FIG. is there.

  Accordingly, when the magnetic sphere 132 is located in the first detection space 136a, the magnetism applied to the first magnetoresistive element 105 is reduced, and when it is located in the second detection space 136b, the second When the magnetism applied to the magnetoresistive element 106 is reduced and located in the third detection space 136c, the magnetism applied to the third magnetoresistive element 107 is reduced and located in the fourth detection space 136d. Sometimes, the magnetism applied to the fourth magnetoresistive element 108 is reduced.

  As shown in FIG. 7, S1 that is the output signal of the first signal terminal 121, S2 that is the output signal of the second signal terminal 122, S3 that is the output signal of the third signal terminal 123, and the fourth By detecting S4 that is the output signal of the signal terminal 124, the location where the magnetic sphere 132 is located is known. If the magnetic sphere 132 is configured to move by its own weight, vertical and horizontal detection can be performed.

The vertical / horizontal detection sensor according to the second embodiment of the present invention includes the above-described magnetic ball position detecting means according to the first embodiment of the present invention. A first detection space 136a, a second detection space 136b, a third detection space 136c, a fourth detection space 136d, and a first detection space 136a and a second detection space 136b that extend in four directions at intervals of °. The first detection space 136c and the fourth detection space 136d are configured in a shape including two side inner walls (not shown) positioned in a direction perpendicular to the plane including the fourth detection space 136d and facing each other. At the same time, the first magnet 138, the second magnet 139, the third magnet 140, the fourth magnet 141, the first magnetoresistive element 105, the second magnetoresistive element 106 constituting the magnetic detection circuit, The third magnetoresistive element 107 and the fourth magnetoresistive element 108 are provided outside the first detection space 136a, the second detection space 136b, the third detection space 136c, and the fourth detection space 136d. Then, the magnetic detection circuit detects the detection space in which the magnetic ball 132 has entered due to its own weight among the first detection space 136a, the second detection space 136b, the third detection space 136c, and the fourth detection space 136d. Thus, it is detected that this detection space is below the other three detection spaces, and thereby, vertical and horizontal detection is performed.

( Embodiment 3 )
8 is a front cross-sectional view of a magnetic sphere position detection device according to Embodiment 3 of the present invention, FIG. 9 is an operation principle diagram of the magnetic sphere position detection device, and FIG. 10 is a magnetic sphere position detection device. FIG. 11 is a front cross-sectional view of the main part of the position detecting device for the magnetic sphere, and FIG. 11 is a diagram showing the relationship between the position of the magnetic sphere in FIG.

  8 to 11, the magnetic sphere 201 is made of an Fe-based alloy, and is particularly made of permalloy having a high magnetic permeability and a low coercive force. A housing 202 that accommodates the magnetic ball 201 in a rollable manner is made of a non-magnetic material. In particular, when the housing 202 is made of a liquid crystal polymer containing a conductive material such as carbon or a resin material such as polyamide, a housing having excellent heat resistance and capable of being reflowed as a surface mount component is obtained. In addition, since polyamide is inexpensive, it is excellent in economic efficiency. The magnetic ball 201 rolls or slides on the inner wall 202a of the housing 202. A magnetic ball 201 is accommodated in the internal space 203 of the housing 202.

  The magnetoresistive element 204 formed in a pattern formed by folding a plurality of ferromagnetic thin films made of NiCo, NiFe or the like has a maximum resistance value change rate when a magnetic field is applied perpendicularly to the current direction, and the resistance The value decreases. The specific shape of the pattern of the magnetoresistive element 204 formed by folding a plurality of ferromagnetic thin films is the same as that described in FIG. A thin film magnet (which is also an embodiment of a “magnet”) 205 for applying magnetism applies magnetism in a direction parallel to the nearest inner wall 202a, and the direction of the magnetic field of this thin film magnet 205 is fixed. It is made of a material such as a CoPt alloy, a CoCrPt alloy, or ferrite set by magnetism. Here, the direction in which the magnetism is applied from the thin film magnet 205 makes an angle of 90 ° with the longitudinal direction of the pattern of the magnetoresistive element 204. The angle of 90 ° is preferable because the change in the resistance value of the magnetoresistive element 204 can be increased, but it may be about 45 ° in practice.

A rectangular substrate 206 made of an insulating material such as alumina constitutes a container 202b together with the housing 202. Since a smooth surface can be obtained by forming the glass glaze layer 206a on the surface of the substrate 206, an electric circuit can be easily formed on the substrate 206. The insulating layer 207 formed on the magnetoresistive element 204 is made of a material such as SiO ₂ , alumina, epoxy resin, or silicon resin. A thin film magnet 205 is formed on the upper surface of the insulating layer 207. When the thin film magnet 205 is formed of a CoPt alloy, using SiO ₂ for the insulating layer 207 is inexpensive and the thin film magnet 205 is formed. Therefore, reliability such as humidity resistance is improved. When the protective film 208 made of a material such as SiO ₂ , alumina, epoxy resin, or silicon resin formed on the thin film magnet 205 is made of a filler-containing epoxy resin, it has excellent adhesion and wear resistance. Also, the humidity resistance is excellent, and the reliability of the magnetoresistive element 204 and the thin film magnet 205 is improved. The protective film 208 constitutes a part of the inner wall 202a.

  8 and 9, the glass glaze layer 206a, the insulating layer 207, and the protective film 208 are omitted for easy viewing of the drawings.

The operation principle of the magnetic sphere position detection device according to Embodiment 3 of the present invention configured as described above will be described below.

  As shown in FIG. 8, when there is no magnetic sphere 201 on the upper part of the magnetoresistive element 204, the magnetic lines of force are turned up and down from the thin film magnet 205 on the upper part of the magnetoresistive element 204. A part of the magnetic force lines penetrates the magnetoresistive element 204 and applies magnetism to the magnetoresistive element 204. In particular, due to the pattern shape of the magnetoresistive element 204, magnetism in a direction perpendicular to the direction of the current flowing through the magnetoresistive element 204 is applied. Thereby, the resistance value of the magnetoresistive element 204 shows a low value.

  On the other hand, as shown in FIG. 9, when the magnetic sphere 201 approaches the top of the magnetoresistive element 204, the magnetic lines of force from the thin film magnet 205 above the magnetoresistive element 204 are attracted to the magnetic sphere 201. Thus, the magnetic lines of force gather on the upper side of the thin film magnet 205, so that the magnetic lines of force around the lower side of the thin film magnet 205 are reduced. As a result, the lines of magnetic force penetrating the magnetoresistive element 204 are also reduced, so that the resistance value of the magnetoresistive element 204 is high. The relationship between the position of the magnetic sphere 201 and the resistance value of the magnetoresistive element 204 in this magnetic sphere position detection device is shown in FIG.

  Thus, when the magnetic sphere 201 exists at a position near the magnetoresistive element 204, the resistance value of the magnetoresistive element 204 becomes high, while the magnetic sphere 201 exists at a position near the magnetoresistive element 204. If not, the resistance value of the magnetoresistive element 204 becomes low (see FIG. 10). Therefore, by detecting the resistance value of the magnetoresistive element 204, it is possible to detect whether or not the magnetic sphere 201 is present in the vicinity of the magnetoresistive element 204.

As described above, the magnetic sphere position detection device according to the third embodiment of the present invention applies the magnetism from the thin film magnet 205 in the direction parallel to the nearest inner wall 202a. Can be prevented from adversely affecting the movement.

  To explain this, when applying magnetism vertically, first, it is necessary to dispose a magnetoresistive element between the magnet and the inner wall. This is because if a magnet is arranged between the inner wall and the magnetoresistive element, in other words, if one magnetic pole of the magnet is arranged on the inner wall side and the other magnetic pole is arranged on the magnetoresistive element side, the position of the magnetic sphere This is because the magnetism detected by the magnetoresistive element is hardly changed because the magnetism from the magnetic pole on the side opposite to the inner wall is hardly affected even if the magnetic field changes. When magnetism is applied vertically, secondly, it is necessary to separate the magnet from the inner wall. This is because if the distance between the magnet and the inner wall is narrowed while the magnetoresistive element is disposed between the magnet and the inner wall, the distance between the magnet and the magnetoresistive element is also narrowed. In this case, since the magnetoresistive element is located near the magnetic pole from which the magnetic lines of force are generated, even if the magnetic sphere is approaching or is away from the magnetic sphere, Many will penetrate the magnetoresistive element, and as a result, the change in magnetism received by the magnetoresistive element due to the change in position of the magnetic sphere will be reduced. For this reason, it is necessary to arrange the magnetoresistive element at a certain distance from the magnet, and eventually it is necessary to increase the distance between the magnet and the inner wall. As described above, if the distance between the magnet and the inner wall is increased, it is naturally necessary to increase the magnetism of the magnet. Then, even if the magnetic spheres are slightly separated, there is little decrease in the force with which the magnet attracts the magnetic spheres. Therefore, the magnetic sphere is affected by the movement by the magnetic force from the magnet.

As described above, the position detection device for the magnetic sphere in Embodiment 3 of the present invention does not hinder the movement of the magnetic sphere 201 due to its own weight even if the magnetic sphere 201 is reduced in weight. Can be realized.

  Further, since the thin film magnet 205 and the magnetoresistive element 204 are arranged in this order from the side closer to the inner wall 202a with which the magnetic sphere 201 is in contact (see FIG. 11), the gap between the magnetic sphere 201 and the thin film magnet 205 is close. Accordingly, even when the magnetism of the thin film magnet 205 is weakened, it is possible to detect when the magnetic sphere 201 comes in the vicinity. Since the force attracting the magnetic body by the magnet is inversely proportional to the square of the distance, the magnetism at the position away from the thin film magnet 205 can be sufficiently reduced by weakening the magnetism of the thin film magnet 205. From this point Can prevent the movement of the magnetic sphere 201 from being adversely affected.

  In addition, since the magnetoresistive element 204 and the thin film magnet 205 are formed of a thin film, the entire apparatus can be reduced in size and thickness.

  Furthermore, since the magnetoresistive element 204 and the thin film magnet 205 are integrally formed on the substrate 206, variation in the positional relationship between the magnetoresistive element 204 and the thin film magnet 205 due to individual differences can be reduced and accurately maintained. . Thereby, since the variation in magnetism applied from the thin film magnet 205 to the magnetoresistive element 204 can be reduced, the variation in MR characteristic (Magneto Resistance characteristic), which is the relationship between the applied magnetism and the resistance value change rate, also occurs. It can be reduced.

  Furthermore, since a part of the protective film 208 also serves as the inner wall 202a, the thin film magnet 205 can be brought closer to the inner wall 202a than when the inner wall 202a is provided separately. The effect of bringing the thin film magnet 205 closer to the inner wall 202a is as described above.

  Further, since the magnetic sphere 201 is made of permalloy, the relative initial permeability of the magnetic sphere 201 can be 5000 or more and the holding force can be 15 A / m or less. Thereby, since the magnetism easily penetrates the magnetic sphere 201, the magnetism of the thin film magnet 205 can be weakened. Furthermore, since it is possible to obtain the magnetic sphere 201 that is hardly magnetized, it is possible to prevent malfunction.

  If the magnetic sphere 201 is lubricated with polytetrafluoroethylene or the like, the friction coefficient is lowered, the rolling of the magnetic sphere 201 is smooth, and the wear resistance is improved. It is high and has excellent corrosion resistance. Therefore, the magnetic sphere 201 is not rusted and the reliability can be improved.

  Further, when the housing 202 is formed of a resin material containing a conductive material such as carbon or a metal material having conductivity, and the housing 202 is electrically connected to the ground, charging of the housing 202 is prevented. be able to. Thereby, the malfunction of the position detection device of the magnetic sphere 201 can be prevented.

In the third embodiment of the present invention, an MR element made of a ferromagnetic film is used as the magnetoresistive element 204. However, a GMR element (Giant Magneto Resistance element) made of an artificial lattice multilayer film is used. Even in such a case, the same effect as in the third embodiment of the present invention can be obtained.

As is clear from the above description, the magnetic sphere position detection device according to the third embodiment of the present invention can be introduced into various technologies. For example, in addition to the vertical and horizontal detection sensors described later, a posture sensor, It can also be applied to an inclination sensor or the like. In addition, the vertical / horizontal detection sensor described later detects four postures, but the magnetic ball according to the third embodiment of the present invention is also applicable to posture sensors that detect two postures, three postures, and five postures. The position detection device of can be applied.

( Embodiment 4 )
The vertical / horizontal detection sensor according to the fourth embodiment of the present invention uses the magnetic ball position detecting device according to the third embodiment of the present invention.

12 is a front sectional view of the vertical / horizontal detection sensor according to Embodiment 4 of the present invention when placed on its back, FIG. 13 is a top sectional view of the vertical / horizontal detection sensor when installed vertically, and FIG. 14 is a main portion of the vertical / horizontal detection sensor. FIG. 15 is a plan view of the main part of the vertical / horizontal detection sensor, FIGS. 16 and 17 are operation principle diagrams of the vertical / horizontal detection sensor, and FIG. 18 is the position of the magnetic sphere representing the posture of the vertical / horizontal detection sensor. FIG. 19 is an electric processing circuit diagram of the vertical / horizontal detection sensor, and FIG. 20 is a determination logic diagram of the vertical / horizontal detection sensor.

  Here, the posture of the vertical / horizontal detection sensor when the upper side of the paper (upper part of the paper) shown in FIG. 12 is the actual vertical upper side is referred to as “place on the back”, and the upper side of the paper shown in FIG. The posture of the vertical / horizontal detection sensor is called “vertical placement”.

12 to 17 and 19, the magnetic sphere 211 has the same configuration as the magnetic sphere 201 in the third embodiment of the present invention described above. A housing 212 made of a non-magnetic material is installed so as to cover an upper surface of a substrate 216 described later, and has a recess capable of accommodating a magnetic sphere 211, in which the magnetic sphere 211 is accommodated. Yes. Further, when the housing 212 is made of a liquid crystal polymer containing a conductive material such as carbon, or a resin material such as polyamide, a housing having excellent heat resistance and capable of being reflowed as a surface mount component is obtained. Moreover, since polyamide is inexpensive, it is excellent in economic efficiency. A side inner wall 212a corresponds to the ceiling surface of the housing 212 in FIG. A recess 212 b is formed at the center of the side inner wall 212 a of the housing 212. The magnetic sphere 211 rolls in an internal space 213 formed by the housing 212 and a substrate 216 described later.

Detection spaces 213a to 213d that are part of the internal space 213 and extend in four directions at intervals of 90 ° in the same plane are formed. First to fourth magnetoresistive elements 214a to 214d are formed outside the detection spaces 213a to 213d, respectively. These magnetoresistive elements 214a to 214d have the same configuration as the magnetoresistive element 204 in the third embodiment of the present invention described above. Thin film magnets 215a to 215d are formed outside the detection spaces 213a to 213d, respectively. These thin film magnets 215a to 215d have the same configuration as the thin film magnet 205 in the third embodiment of the present invention.

The basic structure of the substrate 216 is the same as that of the substrate 206 in the third embodiment of the present invention described above, and a glass glaze layer (not shown) is formed on the surface of the substrate 216. Further, first to fourth magnetoresistive elements 214a to 214d are formed on the upper surface of the substrate 216, and further, an insulating film (on the upper surface of the first to fourth magnetoresistive elements 214a to 214d is formed. Thin film magnets 215a to 215d are formed through (not shown). Further, a protective film (not shown) for protecting the first to fourth magnetoresistive elements 214a to 214d, the thin film magnets 215a to 215d and the substrate 216 is formed on these.

The configuration of the substrate 216, the first to fourth magnetoresistive elements 214a to 214d, the insulating film (not shown), the thin film magnets 215a to 215d, and the protective film (not shown) is the first to fourth magnetic elements. Although there are differences in the numbers of the resistance elements 214a to 214d and the thin film magnets 215a to 215d, the basic configuration is the same as that of the magnetic ball position detection apparatus in the third embodiment of the present invention described above.

  A side inner wall 216 a that is a part of the surface of a protective film (not shown) formed on the substrate 216 is in contact with the internal space 213. The side inner wall 212a and the side inner wall 216a of the housing 212 are opposed to each other, and both are positioned in a direction perpendicular to the plane including the four detection spaces 213a to 213d. A recess 216b formed in the central portion of the side inner wall 216a on the substrate 216 is opposed to the recess 212b on the housing 212 side via the internal space 213. Convex protrusions 217a to 217d are formed on the inner wall of the housing 212 between the adjacent detection spaces 213a to 213d. An input electrode 218, a ground electrode 219, a first output electrode 220a, and a second output electrode 220b are formed on the substrate 216.

  Here, the first magnetoresistive element 214a and the second magnetoresistive element 214b are electrically connected in series as shown in FIG. 14, and the third magnetoresistive element 214c and the fourth magnetoresistive element are connected. 214d is also electrically connected in series. The series circuit of the first magnetoresistive element 214a and the second magnetoresistive element 214b and the series circuit of the third magnetoresistive element 214c and the fourth magnetoresistive element 214d are electrically connected in parallel. ing. Further, the connection portion between the first magnetoresistive element 214a and the second magnetoresistive element 214b is connected to the first output electrode 220a, and the third magnetoresistive element 214c and the fourth magnetoresistive element 214d. Is connected to the second output electrode 220b. Further, the longitudinal directions of the patterns of the first magnetoresistive element 214a, the second magnetoresistive element 214b, the third magnetoresistive element 214c, and the fourth magnetoresistive element 214d are parallel to each other as shown in FIG. Yes. The longitudinal direction of this pattern corresponds to the direction of current flowing through the first magnetoresistive element 214a to the fourth magnetoresistive element 214d, and the first thin film magnet 215a to the fourth thin film magnet are perpendicular to the current direction. A magnetic field is applied by 215d. And when a magnetic field is applied in this way, the resistance value of the 1st magnetoresistive element 214a-the 4th magnetoresistive element 214d will fall. The first magnetoresistive element 214a and the third magnetoresistive element 214c are connected to the input electrode 218, while the second magnetoresistive element 214b and the fourth magnetoresistive element 214d are connected to the ground electrode 219. Yes. Thus, the first to fourth magnetoresistive elements 214a to 214d constitute a full bridge circuit as shown in FIG. The input electrode 218, the ground electrode 219, the first output electrode 220a, and the second output electrode 220b are each made of a material such as silver or silver palladium.

The operation of the vertical / horizontal detection sensor according to Embodiment 4 of the present invention configured as described above will be described below.

The operation principle of the vertical / horizontal detection sensor in the fourth embodiment of the present invention incorporates the operation principle of the magnetic sphere position detection device in the third embodiment of the present invention described above.

  Here, FIG. 16 is a diagram in which the upper side of the paper is the actual vertical upper side, and is a front view when the vertical / horizontal detection sensor is placed vertically as in FIG. FIG. 17 is a diagram in which the front side of the paper (the front side perpendicular to the paper surface) is actually vertically upward, and is a plan view when the vertical / horizontal detection sensor is placed on its back.

  As shown in FIG. 13 or FIG. 16, when the vertical / horizontal detection sensor is placed vertically, the magnetic sphere 211 rolls vertically downward by its own weight in the internal space 213 and moves to the lowest position. That is, in FIG. 13 or FIG. 16, the magnetic sphere 211 has moved to the detection space 213d. At this time, since the magnetic lines of force from the thin film magnet 215d provided outside the detection space 213d are pulled to the magnetic sphere 211, the lines of magnetic force penetrating the fourth magnetoresistive element 214d are reduced, and the fourth magnetic resistance The resistance value of the element 214d increases. Thereby, it can be detected that the detection space 213d is vertically lower than the other detection spaces 213a to 213c.

  At this time, since the resistance values of the first magnetoresistive element 214a, the second magnetoresistive element 214b, and the third magnetoresistive element 214c are not affected by the magnetic sphere 211, they remain low. On the other hand, since only the resistance value of the fourth magnetoresistive element 214d increases, the potential of the first output electrode 220a becomes the center value of the potential between the input electrode 218 and the ground electrode 219, but the second output The potential of the electrode 220b is higher than this central value.

  The above-described operation is performed in the same manner when the magnetic sphere 211 enters the other detection spaces 213a to 213c.

  Hereinafter, the central value of the potential between the input electrode 218 and the ground electrode 219 will be referred to as “reference potential”. In FIG. 18 described later, such terms are used.

  On the other hand, as shown in FIG. 12 or FIG. 17, when the magnetic sphere 211 fits into the depression 212b or the depression 216b, the distance between the magnetic sphere 211 and the thin film magnets 215a to 215d is sufficiently large. The resistance values of the first to fourth magnetoresistive elements 214a to 214d all remain low, and therefore the potential of the first output electrode 220a and the potential of the second output electrode 220b are both reference potentials.

FIG. 18 is a diagram summarizing the relationship between the position of the magnetic sphere 211 and the first output electrode 220a and the second output electrode 220b in Embodiment 4 of the present invention. In the figure, “H” indicates that the potential is higher than the reference potential, and “L” indicates that the potential is lower than the reference potential.

An example of the processing circuit of the vertical / horizontal detection sensor according to Embodiment 4 of the present invention having the above-described configuration and operation will be described with reference to the drawings.

In FIG. 19, the outputs of the first output electrode 220a and the second output electrode 220b are amplified by operational amplifiers 221a and 221b, and the respective outputs are passed through comparators 222a to 222d having appropriate positive and negative thresholds. Thus, HH, HL, and LL results are obtained for one output. The details are the same as in Reference Example 1 above.

From these results, it can be known where the magnetic sphere 211 is located. Then, considering that the magnetic sphere 211 moves vertically downward by its own weight, the posture of the vertical / horizontal detection sensor can be known. That is, the vertical and horizontal orientations of the device incorporating the vertical and horizontal detection sensor can also be known. These results are summarized in FIG. Although it is possible to detect whether the vertical / horizontal detection sensor is in the supine position as shown in FIG. 12, the vertical / horizontal detection sensor according to the fourth embodiment of the present invention is obtained by rotating the vertical / horizontal detection sensor in the supine position by 180 °. It is not possible to distinguish between the state, that is, the prone state and the supine state.

Aspect sensor in the fourth embodiment of the present invention as described above has a structure incorporating a position detection apparatus of the magnetic spheres in the third embodiment of the present invention described above, further embodiments of the present invention 3 The effect of the position detecting device for the magnetic sphere is incorporated.

In addition to the above, since four thin film magnets 215a to 215d are used as means for applying magnetism, the magnetic field from each thin film magnet 215a to 215d is detected in the immediate detection space of each thin film magnet 215a to 215d. The magnetism is sufficient to reach 213a to 213d, and the magnetism can be weakened. The effect of being able to weaken the magnetism of the thin film magnets 215a to 215d is the same as that of the magnetic ball position detecting device in the third embodiment of the present invention described above.

In the vertical / horizontal detection sensor according to the fourth embodiment of the present invention, the shape of the detection space 213d is a curved surface having a concave surface that is slightly larger than the outer shape of the magnetic sphere 211. Therefore, the magnetic sphere 211 is impossible for the detection space 213d. A shape that fits comfortably and fits stably. Thus, when the magnetic sphere 211 moves to the detection space 213d, the magnetic sphere 211 does not go back and forth between the other detection space and the detection space 213d for a while. The resistance value of 214d is stabilized. This is not limited to the detection space 213d, and the same applies to the other detection spaces 213a to 213c.

  Further, in FIG. 13, considering the case where the vertical / horizontal detection sensor is rotated clockwise little by little, since there is a protrusion 217c, even if the vertical / horizontal detection sensor is tilted by 45 °, the magnetic ball 211 does not jump out of the detection space 213d and enter the detection space 213b. When the vertical / horizontal detection sensor is further rotated beyond 45 °, the magnetic sphere 211 eventually leaves the detection space 213d and enters the adjacent detection space 213b. Further, when the vertical / horizontal detection sensor of FIG. 13 is rotated 90 ° clockwise, in this state, the detection space 213b is vertically downward, and the magnetic sphere 211 enters the detection space 213b. On the contrary, if the vertical / horizontal detection sensor is rotated counterclockwise little by little from this state, the magnetic sphere 211 is not moved even if the vertical / horizontal detection sensor is inclined by 45 ° because of the protrusion 217c. It does not jump out of the detection space 213b and enter the detection space 213d. When the vertical / horizontal detection sensor is further rotated counterclockwise from this state, the magnetic ball 211 exits the detection space 213b and enters the adjacent detection space 213d. As is apparent from this phenomenon, by forming the protrusion 217c, the angle at which the magnetic sphere 211 starts to move is different between the clockwise direction and the opposite direction, and has hysteresis. As a result, it is possible to prevent inadvertent changes in vertical and horizontal detection when tilted by about 45 °, and so-called chattering (multiple detection) can be prevented. The same effect can be obtained not only with respect to the above-described protrusion 217c but also with respect to the other protrusions 217a, 217b, and 217d.

  Further, as shown in FIG. 13, the shape of the internal space 213 as a whole is roughly a “ten” shape, and a curved surface in which the inner space 213 is concave at the central intersection of the “ten” character, “ A curved surface in which the internal space 213 is convex is formed at the tip of the “10” shape, and the curved surface is smoothly and continuously connected. Therefore, the movement of the magnetic sphere 211 is smooth, It is also possible to prevent the magnetic sphere 211 from standing still between an arbitrary detection space and a detection space adjacent thereto.

Furthermore, as shown in FIG. 12, when the vertical / horizontal detection sensor is placed on its back, the substrate 216 is positioned vertically below, so the magnetic sphere 211 is positioned on the substrate 216. In this case, since the indentation 216b is formed in the side inner wall 216a, the magnetic sphere 211 is settled stably in the indentation 216b. If there is no recess 216b, the magnetic sphere 211 will move in the internal space 213 even if the side wall 216a is slightly inclined. As a result, the resistance values of the first to fourth magnetoresistive elements 214a to 214d may not be stable, or the magnetic sphere 211 may enter the detection spaces 213a to 213d with a slight inclination. In such a case, false detection is performed. On the other hand, in the fourth embodiment of the present invention, since the recess 216b is formed, such a problem can be solved. On the other hand, the same effect can be obtained in the depression 212b formed in the side inner wall 212a. In FIG. 12, the side inner wall 216a is shown horizontally, but it is preferable that the side inner wall 216a is inclined so as to become lower toward the center where the recess 216b is located. The same applies to the side inner wall 212a.

In the vertical / horizontal detection sensor according to the fourth embodiment of the present invention, four magnets of thin film magnets 215a to 215d are used as means for applying magnetism, but instead of this, one thin film magnet or magnet is used. May be. In this case, since the magnetism must be applied to all of the detection spaces 213a to 213d, there is a disadvantage that the magnetism becomes stronger accordingly. Nevertheless, the magnetic force applied to the magnetic sphere 211 is smaller than when applied in a direction perpendicular to the side inner wall 216a.

  In addition, the electric circuit is composed of one full bridge circuit, but if another power supply is applied in reverse so that another phase is obtained by adding another full bridge circuit (not shown), the output is differential. Since it can be obtained, it is possible to obtain twice the output. In this case, two electric circuits may be stacked and arranged via an insulating layer (not shown).

Further, as an example of the magnetic sphere detection device according to the third embodiment of the present invention, a posture sensor that detects two postures, a posture sensor that detects three postures, and a posture sensor that detects five postures are considered. However, these posture sensors can be implemented by referring to the vertical / horizontal detection sensor according to the fourth embodiment of the present invention. For example, if there are two detection spaces, an attitude sensor that detects two attitudes can be obtained, and if there are three detection spaces, an attitude sensor that detects three attitudes can be obtained. The same can be said for an attitude detection sensor that detects an attitude of five or more attitudes.

( Embodiment 5 )
FIG. 21 is a front sectional view of a magnetic sphere position detection device according to Embodiment 5 of the present invention, FIG. 22 is an operation principle diagram of the position detection device, and FIG. 10 is a position and magnetic field of the magnetic sphere in the position detection device. The figure which shows the relationship of the resistance value of a resistive element, FIG. 23 is front sectional drawing of the principal part of the position detection apparatus.

  21 to 23, the magnetic sphere 301 is made of an Fe-based alloy, and is made of permalloy having a particularly high magnetic permeability and a low coercive force. A housing 302 that constitutes a container that accommodates the magnetic sphere 301 so as to be able to roll or slide therein is made of a non-magnetic material. In particular, when this housing 302 is made of a resin material such as a liquid crystal polymer, polyamide, or polyphenylene sulfide containing a conductive material such as carbon, it has excellent heat resistance and can be reflowed as a surface mount component. Is obtained. Moreover, since polyamide is inexpensive, it is excellent in economic efficiency. The magnetic ball 301 rolls or slides on the inner wall 302a of the housing 302. A magnetic ball 301 is accommodated in the internal space 303 of the housing 302.

  The thin-film magnetoresistive element 304 constituting the magnetic detector formed by patterning a plurality of ferromagnetic thin films made of NiCo, NiFe or the like has a resistance value change rate when a magnetic field is applied perpendicularly to the current direction. It becomes the maximum and the resistance value decreases. The specific shape of the pattern of the magnetoresistive element 304 formed into a pattern formed by folding a plurality of ferromagnetic thin films is the same as that described in FIG. The first thin film magnet 305a to which magnetism is applied constitutes a first magnetic generator. The second thin film magnet 305b to which magnetism is applied constitutes a second magnetic generator. The first thin film magnet 305a and the second thin film magnet 305b are arranged so that the surfaces facing each other are different poles. Specifically, the surface of the first thin film magnet 305a that faces the second thin film magnet 305b is the N pole, and the surface of the second thin film magnet 305b that faces the first thin film magnet 305a is the S pole. It is comprised so that it may become. A configuration in which the N pole and the S pole are reversed may be employed.

  With the configuration of the first thin film magnet 305a and the second thin film magnet 305b, magnetism is applied in a direction parallel to the nearest inner wall 302a. The first thin film magnet 305a and the second thin film magnet 305b are made of a material such as a CoPt alloy, a CoCrPt alloy, or ferrite whose magnetic field direction is set by magnetization. Here, the direction in which magnetism is applied from the first thin film magnet 305a and the second thin film magnet 305b makes an angle of 90 ° with the longitudinal direction of the pattern of the magnetoresistive element 304, that is, the current direction. As described above, an angle of 90 ° is preferable because the change in the resistance value of the magnetoresistive element 304 can be increased, but in practice it can be detected even when the angle is about 45 °. Further, when GMR is used for the magnetoresistive element 304, detection is possible regardless of the angle, but 90 ° is more preferable from the viewpoint that hysteresis can be increased.

  A rectangular substrate 306 made of an insulating material such as alumina constitutes a container together with the housing 302.

By forming the glass glaze layer 306a on the surface of the substrate 306, a smooth surface can be obtained, so that an electric circuit can be easily formed on the substrate 306. The insulating layer 307 formed on the glass glaze layer 306a so as to cover the magnetoresistive element 304 is made of a material such as SiO ₂ , alumina, epoxy resin, or silicon resin. A first thin film magnet 305a and a second thin film magnet 305b are formed on the upper surface of the insulating layer 307. When the first thin film magnet 305a and the second thin film magnet 305b are formed of a CoPt alloy, it is inexpensive to use SiO ₂ for the insulating layer 307, and the first thin film magnet 305a and the second thin film magnet 305b are used. Therefore, reliability such as humidity resistance is improved. The protective film 308 formed on the insulating layer 307 so as to cover the first thin film magnet 305a and the second thin film magnet 305b is made of a material such as SiO ₂ , alumina, epoxy resin, or silicon resin. When the protective film 308 is made of a filler-containing epoxy resin, the magnetic resistance element 304 and the first thin-film magnet are excellent because the adhesiveness is excellent, and the wear resistance and humidity resistance are also excellent. The reliability of the 305a and the second thin film magnet 305b is improved. The protective film 308 constitutes a part of the inner wall 302a of the housing 302.

  In FIG. 21 and FIG. 22, the glass glaze layer 306a, the insulating layer 307, and the protective film 308 are omitted for easy viewing of the drawings.

The operation principle of the magnetic sphere position detection device according to Embodiment 5 of the present invention configured as described above will be described below.

  As shown in FIG. 21, when there is no magnetic sphere 301 above the magnetoresistive element 304, magnetic field lines are generated from the first thin film magnet 305a toward the second thin film magnet 305b, and some of the magnetic field lines are Since the magnetoresistive element 304 penetrates perpendicularly to the current direction, the resistance value of the magnetoresistive element 304 decreases.

  On the other hand, as shown in FIG. 22, when the magnetic sphere 301 approaches the upper portion of the magnetoresistive element 304, the magnetism between the first thin film magnet 305a and the second thin film magnet 305b is applied to the magnetic sphere 301. Sucked. As a result, magnetic lines of force gather on the upper side of the first thin film magnet 305a and the second thin film magnet 305b, so that the lines of magnetic force penetrating the magnetoresistive element 304 are reduced, and the resistance value of the magnetoresistive element 304 shows a high value. FIG. 10 shows the relationship between the position of the magnetic sphere 301 and the resistance value of the magnetoresistive element 304 in this magnetic sphere position detection device.

Thus, when the magnetic sphere 301 at a position in the vicinity of the magnetoresistive element 304 is present, the higher the resistance value of the magnetoresistive element 304, whereas, magnetic spheres 30 1 at a position in the vicinity of the magnetoresistive element 304 When it does not exist, the resistance value of the magnetoresistive element 304 becomes low (see FIG. 10). Therefore, by detecting the resistance value of the magnetoresistive element 304, it is possible to detect whether or not the magnetic sphere 301 is present in the vicinity of the magnetoresistive element 304.

As described above, in the magnetic ball position detecting apparatus according to the fifth embodiment of the present invention, the magnetism between the first thin film magnet 305a and the second thin film magnet 305b is parallel to the inner wall 302a of the nearest housing 302. Since it is applied, it is possible to prevent the movement of the magnetic sphere 301 from being adversely affected.

  To explain this, when applying magnetism in the direction perpendicular to the inner wall 302a of the nearest housing 302, first, it is necessary to dispose a magnetoresistive element between the magnet and the inner wall. Because, if a magnet is arranged between the inner wall and the magnetoresistive element, and one magnetic pole of the magnet is arranged on the inner wall side and the other magnetic pole is arranged on the magnetoresistive element side, the position of the magnetic sphere changes. However, since the magnetism from the magnetic pole on the side opposite to the inner wall is hardly affected, the magnetism detected by the magnetoresistive element is hardly changed. When applying magnetism in a direction perpendicular to the inner wall 302a of the nearest housing 302, secondly, it is necessary to separate the magnet from the inner wall. This is because if the distance between the magnet and the inner wall is reduced in a state where the magnetoresistive element is disposed between the magnet and the inner wall, the distance between the magnet and the magnetoresistive element is also reduced. In this case, since the magnetoresistive element is located near the magnetic pole from which the magnetic lines of force are generated, even if the magnetic sphere is approaching or is away from the magnetic sphere, Most of them will penetrate the magnetoresistive element, and the change in magnetism received by the magnetoresistive element due to the change in position of the magnetic sphere will be reduced. For this reason, it is necessary to arrange the magnetoresistive element at a certain distance from the magnet, and eventually it is necessary to increase the distance between the magnet and the inner wall. As described above, if the distance between the magnet and the inner wall is increased, it is naturally necessary to increase the magnetism of the magnet. In this case, even if the magnetic spheres are separated a little, there is little decrease in the force with which the magnet attracts the magnetic spheres. Therefore, since the magnetic sphere is pulled by the magnetic force from the magnet, its movement is affected.

Thus, the position detection device of the magnetic sphere according to the fifth embodiment of the present invention does not hinder the movement of the magnetic sphere 301 due to its own weight even if the magnetic sphere 301 is reduced in weight. Can be realized.

  Since the first thin film magnet 305a, the second thin film magnet 305b, and the magnetoresistive element 304 are arranged in this order from the side closer to the inner wall 302a of the housing 302 with which the magnetic sphere 301 is in contact (see FIG. 23). The magnetic sphere 301 can be close to the first thin film magnet 305a and the second thin film magnet 305b, and accordingly, the magnetism of the first thin film magnet 305a and the second thin film magnet 305b is weakened. In addition, it is possible to detect when the magnetic sphere 301 comes close. Since the force attracting the magnetic body by the magnet is inversely proportional to the square of the distance, the first thin film magnet 305a and the second thin film magnet 305a are weakened by weakening the magnetism of the first thin film magnet 305a and the second thin film magnet 305b. The magnetism at a position away from the magnet 305b can be made sufficiently small, and from this point, it is possible to prevent the movement of the magnetic sphere 301 from being adversely affected.

  In addition, since the magnetoresistive element 304, the first thin film magnet 305a, and the second thin film magnet 305b are formed of thin films, the entire apparatus can be reduced in size and thickness.

  Furthermore, since the magnetoresistive element 304, the first thin film magnet 305a, and the second thin film magnet 305b are integrally formed on the substrate 306, the magnetoresistive element 304, the first thin film magnet 305a, and the first thin film magnet 305a due to individual differences are integrally formed. The variation in the positional relationship between the two thin film magnets 305b can be reduced and kept accurate. As a result, the variation in magnetism applied from the first thin film magnet 305a and the second thin film magnet 305b to the magnetoresistive element 304 can be reduced, and therefore, the relationship between the applied magnetism and the resistance value change rate. Variations in MR characteristics can also be reduced.

Furthermore, since a part of the protective film 308 also serves as the inner wall 302a, it is possible to bring the first thin film magnet 305a and the second thin film magnet 305b closer to the inner wall 302a than when the inner wall 302a is provided separately. It becomes possible. The effect obtained by close the first thin film magnetic 305a and the second thin film magnet 305b to the inner wall 30 2a is as described above.

  Further, since the magnetic sphere 301 is made of permalloy and the relative initial permeability of the magnetic sphere 301 is 5000 or more, magnetism easily penetrates the magnetic sphere 301. Therefore, it is possible to increase the magnetic change through the magnetoresistive element 304 when the magnetic sphere 301 is positioned in the vicinity of the first thin film magnet 305a and the second thin film magnet 305b. The output change can be increased. Further, since the coercive force of the magnetic sphere 301 is set to 15 A / m or less, the magnetic sphere 301 that is hard to be magnetized can be obtained, and malfunction can be prevented.

  Note that if the magnetic sphere 301 is lubricated with polytetrafluoroethylene or the like, the friction coefficient becomes low, and the rolling of the magnetic sphere 301 becomes smooth. At the same time, since the wear resistance is high and the corrosion resistance is excellent, the magnetic sphere 301 is not rusted and the reliability can be improved.

  In addition, the housing 302 is formed of a resin material containing a conductive material such as carbon or a metal material having conductivity, and the housing 302 is electrically connected to the ground, thereby preventing the housing 302 from being charged. Accordingly, malfunction of the position detecting device for the magnetic sphere 301 can be prevented.

In the fifth embodiment of the present invention, an MR element made of a ferromagnetic film is used as the magnetoresistive element 304. However, even when a GMR element made of an artificial lattice multilayer film is used, The same effect as in the fifth embodiment of the invention can be obtained.

As is clear from the above description, the magnetic sphere position detection device according to the fifth embodiment of the present invention can be introduced into various technologies. For example, in addition to the vertical and horizontal detection sensors described later, a posture sensor, It can also be applied to an inclination sensor or the like. In addition, the vertical / horizontal detection sensor described later detects four postures, but the magnetic ball according to the fifth embodiment of the present invention is also applicable to a posture sensor that detects two postures, three postures, and even five postures. The position detection device of can be applied.

( Embodiment 6 )
The vertical / horizontal detection sensor according to the sixth embodiment of the present invention utilizes the magnetic sphere position detection device according to the fifth embodiment of the present invention described above.

FIG. 24 is a front sectional view of the vertical / horizontal detection sensor according to Embodiment 6 of the present invention when placed on its back, FIG. 25 is a top sectional view of the vertical / horizontal detection sensor when installed vertically, and FIG. 27 is a plan view showing the shape of the magnetoresistive element of the vertical / horizontal detection sensor, FIG. 28 is a plan view of the main part of the vertical / horizontal detection sensor, and FIGS. 29 and 30 are operation principle diagrams of the vertical / horizontal detection sensor. 31 is a diagram showing the relationship between the position and output of the magnetic sphere 311 representing the posture of the vertical / horizontal detection sensor, FIG. 32 is an electric processing circuit diagram of the vertical / horizontal detection sensor, and FIG. 33 is a determination logic diagram of the vertical / horizontal detection sensor. It is.

  Here, the posture of the vertical / horizontal detection sensor when the upper side of the paper shown in FIG. 24 is the actual vertical upper side is referred to as “place on the back”, and the vertical / horizontal detection sensor when the upper side of the paper shown in FIG. Is called “vertical placement”.

24 to 30 and 32, a magnetic sphere 311 has the same configuration as the magnetic sphere 301 in the fifth embodiment of the present invention described above. The housing 312 made of a non-magnetic material is installed so as to cover the upper surface of a substrate 316 to be described later, and has a recess capable of accommodating a magnetic sphere 311, which contains the magnetic sphere 311. Yes. When this housing 312 is made of a resin material such as a liquid crystal polymer or polyamide containing a conductive material such as carbon, it is possible to obtain a heat resistant and reflow compatible surface mount component. Moreover, since polyamide is inexpensive, it is excellent in economic efficiency. A side inner wall 312a corresponds to the ceiling surface of the housing 312 in FIG. A recess 312b is generated at the center of the side inner wall 312a of the housing 312. A magnetic ball 311 rolls in an internal space 313 formed by the housing 312 and a substrate 316 described later.

As a part of the internal space 313, detection spaces 313a to 313d extending in four directions at 90 ° intervals in the same plane are formed. First to fourth magnetoresistive elements 314a to 314d constituting first to fourth magnetic detectors are formed outside the detection spaces 313a to 313d, respectively. These magnetoresistive elements 314a to 314d have the same configuration as the magnetoresistive element 304 in the fifth embodiment of the present invention described above. Moreover, the 1st-8th thin film magnets 315a-315h which respectively comprise the 1st-8th magnetic generator are formed in the outer sides of the detection spaces 313a-313d. These first to eighth thin film magnets 315a to 315h also have the same configuration as the first and second thin film magnets 305a and 305b in the fifth embodiment of the present invention described above, and the first magnetoresistance. The first to eighth thin film magnets 315a to 315h facing each other with any one of the element 314a to the fourth magnetoresistive element 314d are configured so that the poles of the opposing faces are different. That is, the first magnetoresistive element 314a, the second magnetoresistive element 314b, the third magnetoresistive element 314c, and the fourth magnetoresistive element 314d are arranged at each vertex of the square, and the first magnetoresistive element 314a The fourth magnetoresistive element 314d is arranged on the diagonal line, and the second magnetoresistive element 314b and the third magnetoresistive element 314c are arranged on the diagonal line (see FIGS. 25 and 28). A first thin film magnet 315a and a second thin film magnet 315b are provided so as to sandwich the first magnetoresistive element 314a, and the first thin film magnet 315a and the second thin film magnet 315b have different poles. It is configured to face each other. Similarly, a third thin film magnet 315c and a fourth thin film magnet 315d are provided so as to sandwich the second magnetoresistive element 314b, and a fifth thin film magnet 315e is disposed so as to sandwich the third magnetoresistive element 314c. A sixth thin film magnet 315f is provided, and a seventh thin film magnet 315g and an eighth thin film magnet 315h are provided so as to sandwich the fourth magnetoresistive element 314d (see FIG. 28). The first thin film magnet 315a and the second thin film magnet 315b, the third thin film magnet 315c and the fourth thin film magnet 315d, the fifth thin film magnet 315e, the sixth thin film magnet 315f, and the seventh thin film magnet. The mutually opposing surfaces of 315g and the eighth thin film magnet 315h have different poles.

  Further, the second thin film magnet 315b and the third thin film magnet 315c are disposed between the first magnetoresistive element 314a and the second magnetoresistive element 314b, and the sixth thin film magnet 315f and the seventh thin film magnet are disposed. 315g is arranged between the third magnetoresistive element 314c and the fourth magnetoresistive element 314d (see FIG. 28).

The basic structure of the substrate 316 is the same as that of the substrate 306 in the fifth embodiment of the present invention described above, and a glass glaze layer (not shown) is formed on the surface of the substrate 316. The first to fourth magnetoresistive elements 314a to 314d are formed on the upper surface of the substrate 316, and an insulating film (not shown) is formed on the upper surfaces of the first to fourth magnetoresistive elements 314a to 314d. 1) to 8th thin film magnets 315a to 315h are formed. Further, a protective film (not shown) for protecting the first to fourth magnetoresistive elements 314a to 314d, the first to eighth thin film magnets 315a to 315h and the substrate 316 is further provided thereon. Is formed.

The configuration of the substrate 316, the first to fourth magnetoresistive elements 314a to 314d, the insulating film (not shown), the first to eighth thin film magnets 315a to 315h, and the protective film (not shown) Although there are differences in the number of the first to fourth magnetoresistive elements 314a to 314d and the first to eighth thin film magnets 315a to 315h, the basic configuration is the position detection of the magnetic sphere in the fifth embodiment of the present invention described above. It is the same as the device.

  A side inner wall 316 a that is a part of the surface of a protective film (not shown) formed on the substrate 316 is in contact with the internal space 313. The side inner wall 312a and the side inner wall 316a of the housing 312 are opposed to each other, and both of them are located in a direction perpendicular to a plane including the four detection spaces 313a to 313d. A recess 316b formed in the center of the side inner wall 316a on the substrate 316 is opposed to the recess 312b on the housing 312 side via the internal space 313. Convex protrusions 317a to 317d are formed on the inner wall of the housing 312 between the adjacent detection spaces 313a to 313d. An input electrode 318, a ground electrode 319, a first output electrode 320a, and a second output electrode 320b are formed on the substrate 316.

  Here, the first magnetoresistive element 314a and the second magnetoresistive element 314b are electrically connected in series as shown in FIG. 26, and the third magnetoresistive element 314c and the fourth magnetoresistive element are connected. 314d is also electrically connected in series. The series circuit of the first magnetoresistive element 314a and the second magnetoresistive element 314b and the series circuit of the third magnetoresistive element 314c and the fourth magnetoresistive element 314d are electrically connected in parallel. ing. Further, the connection portion between the first magnetoresistive element 314a and the second magnetoresistive element 314b is connected to the first output electrode 320a, and the third magnetoresistive element 314c and the fourth magnetoresistive element 314d. Is connected to the second output electrode 320b. The longitudinal directions of the patterns of the first magnetoresistive element 314a, the second magnetoresistive element 314b, the third magnetoresistive element 314c, and the fourth magnetoresistive element 314d are parallel to each other as shown in FIG. ing. The longitudinal direction of this pattern corresponds to the direction of the current flowing through the first magnetoresistive element 314a to the fourth magnetoresistive element 314d, and the first thin film magnet 315a to the eighth thin film magnet are perpendicular to the current direction. A magnetic field is applied by 315h. And when a magnetic field is applied in this way, the resistance value of the 1st magnetoresistive element 314a-the 4th magnetoresistive element 314d will fall.

  The first magnetoresistive element 314a and the third magnetoresistive element 314c are connected to the input electrode 318, while the second magnetoresistive element 314b and the fourth magnetoresistive element 314d are connected to the ground electrode 319. Yes. As described above, the first to fourth magnetoresistive elements 314a to 314d constitute a full bridge circuit as shown in FIG. The input electrode 318, the ground electrode 319, the first output electrode 320a, and the second output electrode 320b are each made of a material such as silver or silver palladium.

Hereinafter, the operation of the vertical / horizontal detection sensor according to the sixth embodiment of the present invention configured as described above will be described.

The operation principle of the vertical / horizontal detection sensor according to the sixth embodiment of the present invention incorporates the operation principle of the magnetic sphere position detection device according to the fifth embodiment of the present invention described above.

  Here, FIG. 29 is a view in which the upper side of the paper is the actual vertical upper side, and is a front view when the vertical / horizontal detection sensor is placed vertically as in FIG. Further, FIG. 30 is a diagram in which the front side of the paper is actually vertically upward, and is a plan view when the vertical / horizontal detection sensor is placed on its back.

  As shown in FIG. 25 or FIG. 29, when the vertical / horizontal detection sensor is placed vertically, the magnetic sphere 311 rolls vertically under its own weight in the internal space 313 and moves to the lowest position. That is, in FIG. 25 or FIG. 29, the magnetic sphere 311 has moved to the detection space 313d. At this time, since the magnetic lines of force from the seventh thin film magnet 315g and the eighth thin film magnet 315h provided outside the detection space 313d are pulled to the magnetic sphere 311, they penetrate the fourth magnetoresistive element 314d. The line of magnetic force decreases, and the resistance value of the fourth magnetoresistive element 314d increases. Thereby, it can be detected that the detection space 313d is vertically lower than the other detection spaces 313a to 313c.

  At this time, the resistance values of the first magnetoresistive element 314a, the second magnetoresistive element 314b, and the third magnetoresistive element 314c are not affected by the magnetic sphere 311 and thus remain low. On the other hand, since only the resistance value of the fourth magnetoresistive element 314d increases, the potential of the first output electrode 320a becomes the center value of the potential between the input electrode 318 and the ground electrode 319. The potential of the output electrode 320b is higher than this central value.

  The above-described operation is similarly performed when the magnetic ball 311 enters the other detection spaces 313a to 313c.

  Hereinafter, the central value of the potential between the input electrode 318 and the ground electrode 319 will be referred to as a “reference potential”. In FIG. 31 to be described later, such terms are used.

  On the other hand, as shown in FIG. 24 or FIG. 30, when the magnetic sphere 311 is fitted in the dent 312b or the dent 316b, the distance between the magnetic sphere 311 and the first to eighth thin film magnets 315a to 315h is as follows. Since they are sufficiently separated from each other, the resistance values of the first to fourth magnetoresistance elements 314a to 314d remain low. Accordingly, the potential of the first output electrode 320a and the potential of the second output electrode 320b are both reference potentials.

FIG. 31 summarizes the relationship between the position of the magnetic sphere 311 representing the posture of the vertical / horizontal detection sensor and the first output electrode 320a and the second output electrode 320b in the sixth embodiment of the present invention. In the figure, “H” indicates that the potential is higher than the reference potential, and “L” indicates that the potential is lower than the reference potential.

An example of the processing circuit of the vertical / horizontal detection sensor according to Embodiment 6 of the present invention having the above-described configuration and operation will be described with reference to the drawings.

In FIG. 32, the outputs of the first output electrode 320a and the second output electrode 320b are amplified by operational amplifiers 321a and 321b, and the respective outputs are passed through comparators 322a to 322d having appropriate positive and negative thresholds. Thus, HH, HL, and LL results are obtained for one output. From these results, it is possible to know where the magnetic sphere 311 is located. Then, considering that the magnetic sphere 311 moves vertically downward by its own weight, the posture of the vertical / horizontal detection sensor can be understood. That is, the vertical and horizontal orientations of the device incorporating the vertical and horizontal detection sensor can also be known. These results are summarized in FIG. As shown in FIG. 24, it is possible to detect whether the vertical / horizontal detection sensor is in the supine position, but the vertical / horizontal detection sensor according to Embodiment 6 of the present invention is obtained by rotating the vertical / horizontal detection sensor in the supine position by 180 °. It is not possible to distinguish between the state, that is, the prone state and the supine state.

Aspect sensor according to the sixth embodiment of the present invention, as described above, has a structure incorporating a position detection apparatus of the magnetic balls in the fifth embodiment of the present invention described above, further embodiments of the present invention 5 The effect of the position detecting device for the magnetic sphere is incorporated.

In addition to the above, since eight of first to eighth thin film magnets 315a to 315h are used as means for applying magnetism, the magnetic fields from the respective first to eighth thin film magnets 315a to 315h are: The magnetism is sufficient to reach the detection spaces 313a to 313d closest to the first to eighth thin film magnets 315a to 315h, and the magnetism can be weakened. The effect of being able to weaken the magnetism of the first to eighth thin film magnets 315a to 315h is the same as in the case of the position detecting device for the magnetic sphere in the fifth embodiment of the present invention described above.

  The second thin film magnet 315b and the third thin film magnet 315c are disposed between the first magnetoresistive element 314a and the second magnetoresistive element 314b, and the sixth thin film magnet 315f and the seventh thin film magnet are disposed. 315g is arranged between the third magnetoresistive element 314c and the fourth magnetoresistive element 314d. For this reason, when a full bridge circuit is formed as shown in FIG. 26, the relationship between the first magnetoresistive element 314a, the first thin film magnet 315a and the second thin film magnet 315b therearound, and the second magnetoresistive element The relationship between 314b, the third thin film magnet 315c and the fourth thin film magnet 315d around it is the same. Therefore, the potential at the first output electrode 320a is related to the ratio of the resistance values of the first magnetoresistive element 314a and the second magnetoresistive element 314b. By reducing the variation in temperature characteristics between 314a and the second magnetoresistive element 314b, the temperature dependence of the potential at the first output electrode 320a can be reduced. The same applies to the potential at the second output electrode 320b. As a result, the temperature dependency of the vertical / horizontal detection sensor can be reduced, so that excellent temperature characteristics can be obtained.

Moreover, in the vertical / horizontal detection sensor according to Embodiment 6 of the present invention, the shape of the detection space 313d is a curved surface having a concave surface that is slightly larger than the outer shape of the magnetic sphere 311. Therefore, the magnetic sphere 311 is in the detection space 313d. It has a shape that fits comfortably and fits stably. Accordingly, when the magnetic sphere 311 moves to the detection space 313d, the magnetic sphere 311 does not go back and forth between the other detection space and the detection space 313d for a while, so the fourth magnetoresistive element The resistance value of 314d is stable. This is not limited to the detection space 313d, and the same applies to the other detection spaces 313a to 313c.

  Further, in FIG. 25, considering the case where the vertical / horizontal detection sensor is rotated clockwise little by little, since there is a protrusion 317c, even if the vertical / horizontal detection sensor is inclined by 45 °, the magnetic ball 311 Does not jump out of the detection space 313d and enter the detection space 313b. When the vertical / horizontal detection sensor is further rotated beyond 45 °, the magnetic ball 311 eventually leaves the detection space 313d and enters the adjacent detection space 313b. Furthermore, when the vertical / horizontal detection sensor of FIG. 25 is rotated 90 ° clockwise, in this state, the detection space 313b is vertically downward, and the magnetic ball 311 enters the detection space 313b. On the contrary, when the vertical / horizontal detection sensor is rotated little by little in the counterclockwise direction from this state, the magnetic ball 311 does not move even when the vertical / horizontal detection sensor is inclined by 45 ° because there is a protrusion 317c. It does not jump out of the detection space 313b and enter the detection space 313d. When the vertical / horizontal detection sensor is further rotated counterclockwise from this state, the magnetic ball 311 exits the detection space 313b and enters the adjacent detection space 313d. As is apparent from this phenomenon, by forming the protrusion 317c, the angle at which the magnetic sphere 311 starts to move is different between the clockwise direction and the opposite direction, and has hysteresis. As a result, it is possible to prevent so-called chattering (multiple detection), which can prevent inadvertent changes in vertical and horizontal detection when tilted by about 45 °. The same effect can be obtained not only with respect to the above-described protrusion 317c but also with respect to the other protrusions 317a, 317b, and 317d.

  Furthermore, as shown in FIG. 25, the shape of the internal space 313 is generally a “ten” shape, and a curved surface in which the inner space 313 is concave at the central intersection of the “ten” characters; Since the curved surface in which the internal space 313 is convex is formed at the tip portion of the “10” shape, and the curved surface has an outer shape that is smoothly and continuously connected, the movement of the magnetic sphere 311 becomes smooth, Furthermore, it is possible to prevent the magnetic sphere 311 from standing still between an arbitrary detection space and a detection space adjacent thereto.

Further, as shown in FIG. 24, when the vertical / horizontal detection sensor is placed on its back, the substrate 316 is positioned vertically below, so the magnetic sphere 311 is positioned on the substrate 316. In this case, since the recess 316b is formed in the side inner wall 316a, the magnetic sphere 311 fits into the recess 316b and is stably stationary. If this depression 316b is not present, the magnetic sphere 311 will move in the internal space 313 even if the side wall 316a is slightly inclined. As a result, the resistance values of the first to fourth magnetoresistive elements 314a to 314d may become unstable, or the magnetic sphere 311 may enter the detection spaces 313a to 313d with a slight inclination. In such a case, false detection is performed. On the other hand, in the sixth embodiment of the present invention, since the recess 316b is formed, such a problem can be solved. On the other hand, the same effect can be obtained in the recess 312b formed in the side inner wall 312a. In FIG. 24, the side inner wall 316a is shown horizontally, but it is preferable that the side inner wall 316a is inclined so as to become lower toward the center where the recess 316b is located. The same applies to the side inner wall 312a.

In the vertical / horizontal detection sensor according to Embodiment 6 of the present invention, eight magnets of the first to eighth thin film magnets 315a to 315h are used as the means for applying magnetism. A thin film magnet or a magnet may be used. In this case, since the magnetism must be applied to all of the detection spaces 313a to 313d, there is a disadvantage that the magnetism becomes stronger correspondingly. Nevertheless, the magnetic force applied to the magnetic sphere 311 is reduced as compared with the case of applying in a direction perpendicular to the side inner wall 316a.

  In addition, the electric circuit is composed of one full bridge circuit, but if another power supply is applied in reverse so that another phase is obtained by adding another full bridge circuit (not shown), the output is differential. Since it can be obtained, it is possible to obtain twice the output. In this case, two electric circuits may be stacked and arranged via an insulating layer (not shown).

In addition, as an example of the magnetic sphere detection device in the fifth embodiment of the present invention, a posture sensor that detects two postures, a posture sensor that detects three postures, and a posture sensor that detects five postures are considered. However, these posture sensors can be implemented by referring to the vertical / horizontal detection sensor according to Embodiment 6 of the present invention. For example, if there are two detection spaces, an attitude sensor that detects two attitudes can be obtained, and if there are three detection spaces, an attitude sensor that detects three attitudes can be obtained. The same can be said for an attitude detection sensor that detects an attitude of five or more attitudes.

Furthermore, each of the second thin film magnet 315b and the third thin film magnet 315c, and the sixth thin film magnet 315f and the seventh thin film magnet 315g of the vertical / horizontal detection sensor according to Embodiment 6 of the present invention is constituted by one thin film magnet. May be. In this case, since one of the two magnets for applying magnetism to the first magnetoresistive element 314a and the second magnetoresistive element 314b is shared, variation in the applied magnetic field can be reduced. As a result, even better temperature characteristics can be obtained.

  Furthermore, a layer in which the first thin film magnet 315a to the eighth thin film magnet 315h are formed and a layer in which the first magnetoresistive element 314a to the fourth magnetoresistive element 314d are formed on the same plane. You may form in. In this case, the thickness can be reduced as the number of stacked layers decreases.

The magnetism penetrates at an angle of 90 ° with the longitudinal direction of the patterns of the first to fourth magnetoresistive elements 314a to 314d in order to increase the change of the resistance value as in the fifth embodiment. However, in practice, detection is possible even at about 45 °. In addition, when GMR is used for the first magnetoresistive element 314a to the fourth magnetoresistive element 314d, detection is possible regardless of the angle, but 90 ° is more preferable from the viewpoint that the hysteresis can be increased.

Various variations are possible for the vertical / horizontal detection sensor according to Embodiment 6 of the present invention. For example, different electrical connections can be made.

FIG. 34 is an electric circuit diagram of a main part of one variation of the vertical / horizontal detection sensor according to Embodiment 6 of the present invention. 34 differs from FIG. 26 in the arrangement of the input electrode 318, the ground electrode 319, the first output electrode 320a, and the second output electrode 320b. 34, the input electrode 318 is provided between the first magnetoresistive element 314a and the second magnetoresistive element 314b, and the ground electrode 319 is provided between the third magnetoresistive element 314c and the fourth magnetoresistive element 314d. The output electrode 320a is electrically connected between the first magnetoresistive element 314a and the third magnetoresistive element 314c, and the second output electrode 320b is electrically connected between the second magnetoresistive element 314b and the fourth magnetoresistive element 314d. Connected.

  When connected in this way, the tables in FIGS. 31 and 33 are different from those in FIG. 26, but the operating principle is the same as in FIG. Further, even when electrical connection as shown in FIG. 34 is performed, good temperature characteristics can be obtained as in the case of FIG.

( Embodiment 7 )
The vertical / horizontal detection sensor according to the seventh embodiment of the present invention utilizes the magnetic ball position detection device according to the fifth embodiment of the present invention, and the vertical / horizontal detection sensor according to the sixth embodiment of the present invention described above. The configuration is the same except that the arrangement positions of the magnetoresistive element and the thin film magnet are different.

Hereinafter, the seventh embodiment of the present invention will be described focusing on differences from the vertical / horizontal detection sensor according to the sixth embodiment of the present invention described above.

35 is a plan view of the main part of the vertical / horizontal detection sensor according to Embodiment 7 of the present invention, and FIG. 36 is a plan view showing the shape of the magnetoresistive element of the vertical / horizontal detection sensor.

In FIG. 35, the first to eighth thin film magnets 315a ′ to 315h ′ have the same configuration as that of the sixth embodiment of the present invention described above, and the first magnetoresistive element 314a ′ to the fourth magnetism. The first to eighth thin film magnets 315a ′ to 315h ′ that are opposed to each other with any one of the resistance elements 314d ′ being configured such that the poles of the opposing faces are different. This is the same as the vertical / horizontal detection sensor in the sixth embodiment .

The aspect of the vertical / horizontal detection sensor according to the seventh embodiment of the present invention is different from the vertical / horizontal detection sensor according to the sixth embodiment of the present invention described above, as shown in FIG. 35, is that the fourth thin film magnet 315d ′ and the fifth thin film magnet. 315e ′ is disposed between the second magnetoresistive element 314b ′ and the third magnetoresistive element 314c ′, and the first thin film magnet 315a ′, the second thin film magnet 315b ′, and the seventh thin film magnet 315g ′. And the eighth thin film magnet 315h ′ are arranged in parallel with the arrangement direction of the second magnetoresistive element 314b ′ and the third magnetoresistive element 314c ′, respectively. Further, as shown in FIG. 36, with such an arrangement, the first magnetoresistive element 314a ′ to the fourth magnetism are arranged so that magnetism is emitted in a direction of 90 ° with respect to the longitudinal direction of the pattern of the magnetoresistive element. This is that the longitudinal direction of the pattern of the resistive element 314d ′ is inclined by 45 °.

As described above, the vertical / horizontal detection sensor according to the seventh embodiment of the present invention has a configuration incorporating the above-described magnetic sphere position detection device according to the fifth embodiment of the present invention, and further includes an embodiment of the present invention. The action and effect of the magnetic sphere position detecting device 5 in FIG.

Note that the fourth thin film magnet 315d ′ and the fifth thin film magnet 315e ′ of the vertical / horizontal detection sensor according to Embodiment 7 of the present invention may be configured by one thin film magnet.

( Embodiment 8 )
The vertical / horizontal detection sensor according to the eighth embodiment of the present invention utilizes the magnetic sphere position detection device according to the fifth embodiment of the present invention, and the vertical / horizontal detection according to the sixth or seventh embodiment of the present invention described above. The detection sensor has the same configuration except that the shape of the housing 312 is different.

FIG. 37 is a front sectional view of the vertical / horizontal detection sensor according to the eighth embodiment of the present invention when placed on its back.

In Figure 37, the housing 312 side, i.e., that the formation of the tapered portion 323 at an end portion of the first to fourth magnetoresistance elements farther side inner wall 312a from 314 a to 314 d ', the eighth embodiment is performed The sixth embodiment is different from the seventh embodiment . This taper part 323 is formed in four places of detection space 313a-313d, respectively. And it is the structure which approaches the side wall 316a of the nearer side from the 1st-4th magnetoresistive elements 314a-314d as it approaches the front-end | tip of detection space 313a-313d. Furthermore, when the magnetic sphere 311 is positioned at the tip of the detection spaces 313a to 313d, the side inner wall 316a and the first to fourth magnetoresistive elements 314a closer to the first to fourth magnetoresistive elements 314a to 314d. The magnetic sphere 311 is in contact with the tapered portion 323 which is a part of the side inner wall 312a ′ far from ˜314d. With this configuration, when the magnetic sphere 311 is positioned at the tip of the detection spaces 313a to 313d, the magnetic sphere 311 is pressed by the taper portion 323 to contact the side wall 316a, that is, the first to eighth thin film magnets 315a to 315a. The structure is closer to the layer where 315h is formed. For this reason, the magnetic sphere 311 can attract more magnetic flux, thereby obtaining a larger output fluctuation.

In the vertical / horizontal detection sensor according to the eighth embodiment of the present invention, a part of the side surface inner wall 312a ′ in the detection spaces 313a to 313d is a tapered portion 323 having a tapered shape. It may be.

  The magnetic sphere position detection device according to the present invention is useful as a magnetic sphere position detection device or a vertical / horizontal detection sensor used to detect the posture of various electronic devices and the like.

Circuit diagram of magnetic detection circuit in Reference Example 1 of the present invention The circuit diagram of the magnetic discrimination circuit connected to the magnetic detection circuit in Reference Example 1 of the present invention Logic diagram of magnetic discrimination circuit connected to magnetic detection circuit in Reference Example 1 of the present invention Sectional drawing of the principal part of the magnetic sensor in the reference example 2 of this invention Front sectional drawing of the principal part of the position detection apparatus of the magnetic body sphere in Embodiment 1 of this invention Plan sectional drawing of the principal part of the aspect detection sensor in Embodiment 2 of this invention Operational diagram of vertical / horizontal detection sensor according to Embodiment 2 of the present invention Front sectional view of a magnetic sphere position detecting device in Embodiment 3 of the present invention Operation Principle Diagram of Magnetic Sphere Position Detection Device in Embodiment 3 of the Present Invention The figure which shows the relationship between the position of the magnetic body sphere in Embodiment 3 and 5 of this invention, and the resistance value of a magnetoresistive element Front sectional drawing of the principal part of the position detection apparatus of the magnetic sphere in Embodiment 3 of this invention Front sectional view at the time of placing the vertical / horizontal detection sensor on its back in Embodiment 4 of the present invention Top sectional drawing at the time of the vertical installation of the vertical / horizontal detection sensor in Embodiment 4 of this invention Electrical circuit diagram of main part of vertical / horizontal detection sensor according to Embodiment 4 of the present invention The top view of the principal part of the vertical / horizontal detection sensor in Embodiment 4 of this invention Operational principle diagram of vertical / horizontal detection sensor in Embodiment 4 of the present invention Operational principle diagram of vertical / horizontal detection sensor in Embodiment 4 of the present invention The figure which shows the relationship between the position and output of the magnetic body sphere showing the attitude | position of the vertical / horizontal detection sensor in Embodiment 4 of this invention. Electrical processing circuit diagram of the vertical / horizontal detection sensor in Embodiment 4 of the present invention Determination logic diagram of vertical / horizontal detection sensor according to Embodiment 4 of the present invention Front sectional view of a magnetic sphere position detecting device in Embodiment 5 of the present invention Operational principle diagram of position detecting apparatus in embodiment 5 of the present invention Front sectional drawing of the principal part of the position detection apparatus in Embodiment 5 of this invention Front sectional view at the time of placing the vertical / horizontal detection sensor on its back in Embodiment 6 of the present invention Cross-sectional top view when the vertical / horizontal detection sensor according to the sixth embodiment of the present invention is placed vertically. Electrical circuit diagram of main part of vertical / horizontal detection sensor according to Embodiment 6 of the present invention The top view which shows the shape of the magnetoresistive element of the vertical / horizontal detection sensor in Embodiment 6 of this invention The top view of the principal part of the vertical / horizontal detection sensor in Embodiment 6 of this invention Operational principle diagram of vertical / horizontal detection sensor according to Embodiment 6 of the present invention Operational principle diagram of vertical / horizontal detection sensor according to Embodiment 6 of the present invention The figure which shows the relationship between the position and output of a magnetic body sphere showing the attitude | position of the vertical / horizontal detection sensor in Embodiment 6 of this invention. Electrical processing circuit diagram of vertical / horizontal detection sensor according to Embodiment 6 of the present invention Decision logic diagram of vertical / horizontal detection sensor in Embodiment 6 of the present invention Electrical circuit diagram of main part of one variation of vertical / horizontal detection sensor according to Embodiment 6 of the present invention The top view of the principal part of the vertical / horizontal detection sensor in Embodiment 7 of this invention The top view which shows the shape of the magnetoresistive element of the vertical / horizontal detection sensor in Embodiment 7 of this invention Front sectional view at the time of placing the vertical / horizontal detection sensor on its back in Embodiment 8 of the present invention

DESCRIPTION OF SYMBOLS 101 Applied electrode 102 1st detection electrode 103 2nd detection electrode 104,219,319 Ground electrode 105,214a, 314a 1st magnetoresistive element (1st magnetic detector)
106, 214b, 314b Second magnetoresistive element (second magnetic detector)
107, 214c, 314c Third magnetoresistive element (third magnetic detector)
108, 214d, 314d Fourth magnetoresistive element (fourth magnetic detector)
109 First reference electrode 110 Second reference electrode 111 First adjustment resistor 112 Second adjustment resistor 113 Third adjustment resistor 114 Fourth adjustment resistor 125, 206, 216, 306, 316 Substrate 127 Magnetoresistive layer (Magnetic resistance element)
129 Magnet layer (magnet)
132, 201, 211, 301, 311 Magnetic sphere 133, 202, 212, 302, 312 Housing 133a, 202a, 302a Inner wall 134, 203, 213, 303, 313 Internal space 136a, 213a, 313a First detection space 136b , 213b, 313b Second detection space 136c, 213c, 313c Third detection space 136d, 213d, 313d Fourth detection space 137, 212b, 216b, 312b, 316b Indentation 138 First magnet 139 Second magnet 140 Third magnet 141 Fourth magnet 204, 304 Magnetoresistive element 205 Thin film magnet 206a, 306a Glass glaze layer 207, 307 Insulating layer 208, 308 Protective film 212a, 216a, 312a, 316a Side wall 215a, 305a, 31 a first thin film magnet (first magnetic generators)
215b, 305b, 315b Second thin film magnet (second magnetic generator)
315c, 315c Third thin film magnet (third magnetic generator)
215d, 315d Fourth thin film magnet (fourth magnetic generator)
217a, 217b, 217c, 217d, 317a, 317b, 317c, 317d Protrusion 218, 318 Input electrode 220a, 320a First output electrode 220b, 320b Second output electrode 221a, 221b, 321a, 321b Operational amplifier 222a, 222b, 222c , 222d, 322a, 322b, 322c, 322d Comparator 315e Fifth thin film magnet (fifth magnetic generator)
315f Sixth thin film magnet (sixth magnetic generator)
315g Seventh thin film magnet (seventh magnetic generator)
315h eighth thin film magnet (eighth magnetic generator)
323 Taper

Claims (28)

A magnetic sphere, a container having an inner space for accommodating the magnetic sphere and having an inner wall on which the magnetic sphere can roll, and a parallel inner wall provided on the outer side of the inner space and parallel to the nearest inner wall of the container A magnetic sphere comprising: a magnet for applying magnetism in any direction; and a magnetic detector for detecting magnetism from the magnet provided in the vicinity of the magnet and opposite to the inner wall Detection device. With constituting the magnetic detector magnetoresistive element formed on a substrate, the magnet is constituted by a thin film magnet formed through an insulating layer on the magneto-resistive element of claim 1, wherein the magnetic spheres Position detector. A vertical / horizontal detection sensor comprising the magnetic ball position detecting device according to claim 1, wherein the internal space of the container is divided into four detection spaces extending in four directions at 90 ° intervals in the same plane, and the four detection spaces. It is configured in a shape including two side inner walls facing each other and positioned in a direction perpendicular to the plane including the detection space, and the magnet and the magnetic detector are provided outside the four detection spaces, respectively. A vertical / horizontal detection sensor which detects that the detection space is below the other three detection spaces by detecting a detection space in which the magnetic sphere enters due to its own weight among the four detection spaces by the magnetic detector. . The vertical / horizontal detection sensor according to claim 3 , wherein one magnet that exerts magnetism on the four detection spaces is provided in place of the magnet provided outside each of the four detection spaces. The vertical / horizontal detection sensor according to claim 3 , wherein the magnetic detector is composed of a magnetoresistive element formed on a substrate, and the magnet is composed of a thin film magnet formed on the magnetoresistive element via an insulating layer. . The container includes a substrate and a housing having a recess capable of accommodating a magnetic sphere and made of a nonmagnetic material so as to cover the substrate, and a part of an inner wall of the container is formed on the substrate. The vertical / horizontal detection sensor according to claim 5 , wherein the vertical / horizontal detection sensor includes a protective film that covers the magnetoresistive element. The vertical / horizontal detection sensor according to claim 6 , wherein the housing is formed of a resin material containing a conductive material or a metal material having conductivity, and the housing is electrically connected to a ground. The vertical / horizontal detection sensor according to any one of claims 3 to 7 , wherein the two side wall surfaces are formed in a shape having a recess in a central portion. An inner wall located between the other detection space adjacent to any one of the sensing space and the one detection space among the four sensing space, and configured in a shape having a convex protrusion, claims 3 to 7 vertical and horizontal sensor according to any one of. The vertical and horizontal detection sensor according to any one of claims 3 to 7 , wherein the magnetic sphere is configured so that a relative initial permeability is 5000 or more and a coercive force is 15 A / m or less. A magnetic body, a container having an internal space for accommodating the magnetic body and having an inner wall on which the magnetic body can roll or slide, a magnetic generator disposed outside the internal space, and the magnetic generator A magnetism detector for detecting magnetism from the first, the magnetism generator is arranged so that magnetism is generated in a direction parallel to the inner wall of the nearest container, and the magnetism detector is sandwiched between the first magnetism detector A magnetic material position detection apparatus comprising a magnetic generator and a second magnetic generator, wherein the first magnetic generator and the second magnetic generator are configured such that different poles face each other . The position detection device for a magnetic body according to claim 11 , wherein the magnetic body is formed of a spherical magnetic body sphere. 12. The apparatus according to claim 11 , further comprising a substrate on which the magnetic detector and the magnetic generator are formed, wherein the magnetic detector is configured by a thin film magnetoresistive element, and the magnetic generator is configured by a thin film magnet. Magnetic body position detection device. A magnetic body, a container having an internal space for accommodating the magnetic body and having an inner wall on which the magnetic body can roll or slide, a magnetic generator disposed outside the internal space, and the magnetic generator Including a magnetic detector for detecting magnetism from the magnetic body, wherein the magnetic generator is disposed so that magnetism is generated in a direction parallel to the inner wall of the nearest container , and the magnetic body Is formed of spherical magnetic spheres, and the internal space of the container is configured to have four detection spaces that extend in four directions at 90 ° intervals in the same plane, and the container includes the four detection spaces. Two side inner walls facing each other and positioned in a direction perpendicular to the plane to include, and further, the magnetic generator and the magnetic detector are respectively arranged outside the four sensing spaces, and the magnetic detector By detecting the detection space in which the magnetic sphere has entered due to its own weight among the four detection spaces, the detection space in which the magnetic sphere has entered due to its own weight is positioned below the other three detection spaces. A vertical / horizontal detection sensor that detects The vertical / horizontal detection sensor according to claim 14 , wherein one magnetic generator that applies magnetism to the four detection spaces is arranged instead of the magnetic generator arranged outside each of the four detection spaces. The first magnetic generator, the second magnetic generator, the third magnetic generator, the fourth magnetic generator, the fifth magnetic generator, the sixth magnetic generator, the seventh The magnetic generator and the eighth magnetic generator, and the first magnetic detector, the second magnetic detector, the third magnetic detector, and the fourth magnetic detector are square. Further, the first magnetic detector and the fourth magnetic detector are arranged diagonally, and the second magnetic detector and the third magnetic detector are arranged diagonally. The first magnetic generator and the second magnetic generator are disposed so as to sandwich the first magnetic detector, and the first magnetic generator and the second magnetic generator are respectively provided. The third magnetism generator is configured so that different poles face each other and sandwich the second magnetic detector. And the fourth magnetic generator, and the third magnetic generator and the fourth magnetic generator are configured such that different poles face each other so that the third magnetic detector is sandwiched between them. The fifth magnetic generator and the sixth magnetic generator are provided, and the fifth magnetic generator and the sixth magnetic generator are configured so that different poles face each other, The seventh magnetic generator and the eighth magnetic generator are provided so as to sandwich the four magnetic detectors, and the seventh magnetic generator and the eighth magnetic generator face each other with different poles. The vertical / horizontal detection sensor according to claim 14 , wherein the vertical / horizontal detection sensor is configured to do so. The second magnetic generator and the third magnetic generator are disposed between the first magnetic detector and the second magnetic detector, and the sixth magnetic generator and the seventh magnetic generator are arranged. The vertical / horizontal detection sensor according to claim 16 , wherein a magnetic generator is arranged between the third magnetic detector and the fourth magnetic detector. 18. The vertical / horizontal detection sensor according to claim 17 , wherein each of the second magnetic generator, the third magnetic generator, the sixth magnetic generator, and the seventh magnetic generator is used as one magnetic generator. . The fourth magnetic generator and the fifth magnetic generator are arranged as a single magnetic generator between the second magnetic detector and the third magnetic detector, and the first magnetic generator The magnetic generator, the second magnetic generator, the seventh magnetic generator, and the eighth magnetic generator are parallel to the arrangement direction of the second magnetic detector and the third magnetic detector, respectively. The vertical / horizontal detection sensor according to claim 16 , wherein the vertical / horizontal detection sensor is arranged and configured. The first magnetic detector to the fourth magnetic detector are composed of a thin film first magnetoresistive element to a fourth magnetoresistive element, respectively, and the first magnetic generator to the eighth magnetism. The vertical / horizontal detection sensor according to any one of claims 16 to 19 , wherein each of the generators includes a first thin film magnet to an eighth thin film magnet. The eighth thin film magnet from the first thin film magnet is formed closer to the inner wall of the container than a layer in which the fourth magnetoresistive element is formed from the first magnetoresistive element. 20. The vertical / horizontal detection sensor according to 20 . 21. Vertical / horizontal detection according to claim 20, wherein the first thin film magnet to the eighth thin film magnet are formed on the same plane as the layer on which the first magnetoresistive element to the fourth magnetoresistive element are formed. Sensor. The container is formed of a housing having a concave portion for accommodating the magnetic sphere and made of a nonmagnetic material so as to cover the substrate, and a part of the inner wall of the container is formed on the substrate. 21. The vertical / horizontal detection sensor according to claim 20 , comprising a protective film covering any one or both of the first magnetoresistive element to the fourth magnetoresistive element and the first thin film magnet to the eighth thin film magnet. . The vertical / horizontal detection sensor according to claim 23 , wherein the housing is formed of a resin material containing a conductive material or a metal material having conductivity, and the housing is electrically connected to a ground. The vertical / horizontal detection sensor according to any one of claims 14 to 19 , wherein the two side wall surfaces are formed in a shape having a recess in a central portion. An inner wall located between the other detection space adjacent to any one of the sensing space and the one detection space among the four sensing space, and configured in a shape having a convex protrusion, claims 14 to 20. The vertical / horizontal detection sensor according to any one of 19 above. The vertical / horizontal detection sensor according to any one of claims 14 to 19 , wherein the magnetic body is configured to have a relative initial permeability of 5000 or more and a coercive force of 15 A / m or less. Of the two side inner walls in the four detection spaces, the side inner wall farther from the magnetic detector is brought closer to the side inner wall closer to the magnetic detector as the tip of the four detection spaces is approached. The vertical / horizontal detection sensor according to claim 14 , wherein the magnetic ball is in contact with the inner walls of the two side surfaces at the front ends of the four detection spaces.

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