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JP5012144B2 - ポジ型フォトレジスト組成物 - Google Patents

ポジ型フォトレジスト組成物 Download PDF

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Publication number
JP5012144B2
JP5012144B2 JP2007091198A JP2007091198A JP5012144B2 JP 5012144 B2 JP5012144 B2 JP 5012144B2 JP 2007091198 A JP2007091198 A JP 2007091198A JP 2007091198 A JP2007091198 A JP 2007091198A JP 5012144 B2 JP5012144 B2 JP 5012144B2
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JP
Japan
Prior art keywords
group
formula
carbon atoms
polymer
meth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2007091198A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008249993A (ja
Inventor
好治 戸石
益実 末次
和彦 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Priority to JP2007091198A priority Critical patent/JP5012144B2/ja
Priority to TW097110684A priority patent/TWI422973B/zh
Priority to KR1020080029037A priority patent/KR101424521B1/ko
Publication of JP2008249993A publication Critical patent/JP2008249993A/ja
Application granted granted Critical
Publication of JP5012144B2 publication Critical patent/JP5012144B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/285—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing a polyether chain in the alcohol moiety
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2007091198A 2007-03-30 2007-03-30 ポジ型フォトレジスト組成物 Active JP5012144B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007091198A JP5012144B2 (ja) 2007-03-30 2007-03-30 ポジ型フォトレジスト組成物
TW097110684A TWI422973B (zh) 2007-03-30 2008-03-26 正型阻劑組成物
KR1020080029037A KR101424521B1 (ko) 2007-03-30 2008-03-28 포지티브형 레지스트 조성물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007091198A JP5012144B2 (ja) 2007-03-30 2007-03-30 ポジ型フォトレジスト組成物

Publications (2)

Publication Number Publication Date
JP2008249993A JP2008249993A (ja) 2008-10-16
JP5012144B2 true JP5012144B2 (ja) 2012-08-29

Family

ID=39975010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007091198A Active JP5012144B2 (ja) 2007-03-30 2007-03-30 ポジ型フォトレジスト組成物

Country Status (3)

Country Link
JP (1) JP5012144B2 (zh)
KR (1) KR101424521B1 (zh)
TW (1) TWI422973B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011057663A (ja) 2009-08-11 2011-03-24 Sumitomo Chemical Co Ltd 化合物及びフォトレジスト組成物
US9057951B2 (en) * 2009-08-26 2015-06-16 International Business Machines Corporation Chemically amplified photoresist composition and process for its use
JP5776580B2 (ja) 2011-02-25 2015-09-09 信越化学工業株式会社 ポジ型レジスト材料及びこれを用いたパターン形成方法
JP5698184B2 (ja) 2011-09-02 2015-04-08 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP5698185B2 (ja) 2011-09-06 2015-04-08 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP5874331B2 (ja) 2011-10-17 2016-03-02 住友化学株式会社 化学増幅型フォトレジスト組成物
JP2013148878A (ja) * 2011-12-19 2013-08-01 Sumitomo Chemical Co Ltd レジスト組成物
CN103454857B (zh) 2012-05-31 2020-01-03 住友化学株式会社 光致抗蚀剂组合物
JP6255717B2 (ja) 2012-06-08 2018-01-10 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6182381B2 (ja) 2013-07-29 2017-08-16 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
US9804493B2 (en) 2013-11-22 2017-10-31 Samsung Electronics Co., Ltd. Composition for forming topcoat layer and resist pattern formation method employing the same
JP2016089085A (ja) * 2014-11-07 2016-05-23 株式会社Adeka 組成物
JP2020160318A (ja) * 2019-03-27 2020-10-01 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 厚膜レジスト組成物およびそれを用いたレジスト膜の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3433017B2 (ja) * 1995-08-31 2003-08-04 株式会社東芝 感光性組成物
JP4318944B2 (ja) * 2003-04-07 2009-08-26 東京応化工業株式会社 厚膜用化学増幅型ポジ型ホトレジスト組成物、厚膜ホトレジスト積層体、厚膜レジストパターンの製造方法及び接続端子の製造方法
JP2008191218A (ja) * 2007-02-01 2008-08-21 Tokyo Ohka Kogyo Co Ltd 厚膜用化学増幅型ポジ型ホトレジスト組成物及び厚膜レジストパターンの製造方法

Also Published As

Publication number Publication date
TWI422973B (zh) 2014-01-11
KR101424521B1 (ko) 2014-07-31
TW200907577A (en) 2009-02-16
JP2008249993A (ja) 2008-10-16
KR20080089265A (ko) 2008-10-06

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