JP4659875B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device.

  In recent electronic devices, a semiconductor device using wafer level CSP (chip size package) technology, which is an assembly processing process in a wafer state, in order to realize a small size, a thin shape, a light weight, and a high density mounting of the electronic device. Many have been used.

  For example, a typical solid-state imaging device among optical devices is used as a light receiving sensor of digital video equipment such as a digital still camera, a mobile phone camera, and a digital video camera. In order to realize the small, thin, light weight, and high density mounting of video equipment in recent years, this solid-state imaging device has a ceramic type and plastic that ensure electrical connection inside and outside the device by die bonding and wire bonding. Wafer level CSP technology that secures electrical connection inside and outside the apparatus by forming through-electrodes and rewiring in assembly processing for wafers before singulation instead of type packages has been adopted (for example, patents) Reference 1 and Patent Reference 2).

  FIG. 6 is a cross-sectional view of a solid-state imaging device having a conventional wafer level CSP structure.

  As shown in FIG. 6, the conventional solid-state imaging device 100 </ b> A is formed on a semiconductor substrate 101, an imaging region 102 in which a plurality of microlenses 103 are provided on a main surface that is a light-receiving side surface of the semiconductor substrate 101, and the main A solid-state imaging device 100 including a peripheral circuit region 104A formed in an outer peripheral region of the imaging region 102 on the surface and a plurality of electrode portions 104B connected to the peripheral circuit region 104A is provided.

  Further, on the main surface side of the semiconductor substrate 101, a transparent substrate 106 made of, for example, optical glass or the like is formed via an adhesive member 105 made of resin. Furthermore, a through electrode 107 that penetrates the semiconductor substrate 101 in the thickness direction is provided inside the semiconductor substrate 101.

  On the back surface opposite to the main surface of the semiconductor substrate 101, metal wirings 108 connected to the plurality of electrode portions 104 </ b> B in the peripheral circuit region 104 </ b> A are formed through the through electrodes 107 and cover a part of the metal wirings 108. In addition, an insulating resin layer 109 having an opening 110 exposing the other part is formed. An external electrode 111 made of, for example, a solder material is formed in the opening 110.

  Note that the solid-state imaging device 100 is electrically insulated from the through electrode 107 and the metal wiring 108 by an insulating layer (not shown).

  As described above, in the conventional solid-state imaging device 100 </ b> A, the plurality of electrode portions 104 </ b> B are electrically connected to the metal wiring 108 through the through electrode 107, and further, the external electrode 111 is connected through the metal wiring 108. And the light reception signal can be taken out.

  The conventional solid-state imaging device 100A is manufactured by the following process, for example.

  (Step 1) First, a plurality of solid-state imaging devices 100 having the above-described structure are formed on a wafer by a known method. For example, a transparent substrate 106 having the same shape as a wafer made of optical glass or the like is attached to a wafer on which a plurality of solid-state imaging devices 100 are formed via an adhesive member 105 made of a resin layer.

  (Step 2) Next, through holes that penetrate the semiconductor substrate 101 from the back side and expose the plurality of electrode portions 104B in the peripheral circuit region 104A are formed using dry etching, wet etching, or the like. After that, by burying a conductive material in the through hole, the through electrode 107 connected to the plurality of electrode portions 104B from which the light reception signal is extracted is formed.

  (Step 3) Next, a metal wiring 108 electrically connected to the through electrode 107 is formed on the back surface of the solid-state imaging device 100 by electrolytic plating.

  (Step 4) Next, an insulating resin layer 109 is formed on the back surface of the solid-state imaging device 100 so as to cover the metal wiring 108. In general, a photosensitive resin is used as the insulating resin layer 109, and the insulating resin layer 109 is formed by spin coating or dry film bonding.

  (Step 5) Subsequently, the insulating resin layer 109 is selectively removed by using a photolithography technique (exposure and development), thereby forming an opening 110 exposing a part of the metal wiring 108.

  (Step 6) Subsequently, an external electrode 111 made of, for example, a solder material that is electrically connected to the metal wiring 108 is formed in the opening 110 by a solder ball mounting method using a flux or a solder paste printing method.

  (Step 7) Finally, for example, by using a cutting tool such as a dicing saw, the solid-state imaging device 100, the adhesive member 105, the transparent substrate 106, and the insulating resin layer 109 are collectively cut, whereby a plurality of drawings are obtained. The solid-state imaging device 100A shown in FIG.

  The above-described solid-state imaging device can contribute to the reduction in size, thickness, weight, and high-density mounting of electronic devices by the wafer level CSP technology, but the thermal stress applied in the process after the through electrode 107 is formed, Due to environmental load stress such as heat applied in the actual use environment of the imaging device, stress concentration occurs from the through electrode 107 to the electrode portion 104B, and connection failure and reliability decrease due to disconnection and peeling of the electrode portion 104B occur. It has the problem of being easy to do

  Specifically, due to the difference in thermal expansion coefficient between the through electrode 107 and the electrode portion 104B, particularly large stress (circumferential portion) is applied to the end portion (circumferential portion) of the connection surface between the electrode portion 104B and the through electrode 107 according to the temperature change. Thermal stress) may concentrate, and the electrode 104B may break or peel off.

  Therefore, another solid-state imaging device has been proposed in which measures against such concentrated stress are taken (see, for example, Patent Document 3).

In this solid-state imaging device, the temperature change is achieved by forming a protective film (not shown) made of an inorganic insulating material so as to cover the entire surface of the electrode portion 104B connected to the through electrode 107 shown in FIG. The prevention of the occurrence of connection failure such as disconnection or peeling of the electrode part 104B due to stress concentration from the through electrode 107 to the electrode part 104B that occurs sometimes.
JP 2004-207461 A JP 2007-123909 A JP 2008-140819 A

  However, even in the solid-state imaging device in which the resistance of the electrode portion 104B is enhanced as described above, the electrode portion 104B may still be broken or peeled off.

  Specifically, since the inorganic insulating material itself used as the protective film in the above-described configuration is relatively hard, in a configuration in which the entire surface of the electrode portion 104B is covered with such a protective film, stress on the electrode portion 104B is applied. When concentration occurs, both the protective film and the electrode portion 104B may break or peel off, which is not always sufficient as a measure against concentrated stress.

  Therefore, the present invention aims to provide a semiconductor device that further enhances the resistance to breakage and peeling of the electrode portion 104B against stress concentration from the through electrode 107 to the electrode portion 104B, and is less likely to cause poor connection and lower reliability. .

In order to achieve the above object, a semiconductor device according to a first aspect of the present invention includes a semiconductor substrate, a through electrode provided through the semiconductor substrate in a thickness direction, and a first of the semiconductor substrate. It is an inorganic material that is provided in a portion of the main surface where the through electrode reaches and is electrically connected to the through electrode, and an inorganic material that covers the first main surface excluding a part of the internal electrode. A first protective film, a second protective film provided on the portion of the internal electrode that is not covered with the first protective film, spaced apart from the first protective film, and the first protective film on the semiconductor substrate. A metal wiring provided on a second main surface opposite to the one main surface and electrically connected to the through electrode;

  Here, the area of the second protective film is larger than the area of the region where the through electrode is in contact with the internal electrode.

  The shape of the second protective film may be circular or polygonal. The shape of the second protective film may be annular, and the outer diameter of the second protective film is larger than the diameter of the region where the through electrode is in contact with the internal electrode, and the second protective film The inner diameter of the membrane is smaller than the diameter of the region.

The front Stories second protective film may be inorganic materials, also pre Symbol second protective film may be an organic material.

  The semiconductor device may further include a third protective film provided on the internal electrode so as to fill a part of a gap between the first protective film and the second protective film.

  The semiconductor device may further include an insulating layer that covers the second main surface excluding a part of the metal wiring, and a portion that is not covered with the insulating layer of the metal wiring. And an external electrode that is electrically connected to the metal wiring.

  According to the present invention, even when a stress concentration occurs from the through electrode to the internal electrode due to an environmental load stress such as a thermal stress applied in a process after the through electrode is formed or a heat applied in an actual use environment of the semiconductor device. By suppressing the deformation of the internal electrode by the second protective film, it is possible to prevent connection failure due to disconnection or peeling of the internal electrode and to ensure high connection reliability.

  By providing the second protective film apart from the first protective film, the stress concentration on the internal electrode is reduced in the gap between the first protective film and the second protective film, and the stress generated by the deformation of the internal electrode Can be mitigated, and the occurrence of disconnection, cracking, peeling, etc. of the internal electrode can be prevented more reliably.

  Furthermore, by providing a third protective film in a part of the gap between the first protective film and the second protective film, an internal electrode is formed by a gap left between the first protective film and the second protective film. The stress that the second protective film suppresses the deformation of the internal electrode through the third protective film when the stress concentration occurs, while reducing the stress concentration caused by the internal electrode and the stress generated by the deformation of the internal electrode. It can be obtained from the first protective film, and the through electrode can be prevented from being peeled off and dropped off toward the second main surface of the semiconductor substrate.

  Hereinafter, a semiconductor device according to an embodiment of the present invention will be described.

(Structure of semiconductor device)
First, the structure of a semiconductor device according to an embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 is a cross-sectional view showing the structure of a semiconductor device 10 according to an embodiment of the present invention.

  As shown in FIG. 1, a semiconductor device 10 according to an embodiment of the present invention is mainly made of a metal such as Al or Cu provided on a main surface (hereinafter referred to as a surface) above a semiconductor substrate 11 in the drawing. The internal electrode 12 formed as follows, the first protective film 13A covering the first main surface excluding a part of the internal electrode 12, and the first protective film 13A of the internal electrode are not covered The portion includes a first protective film 13A and a second protective film 13B provided to be spaced apart.

  Here, the first protective film 13A and the second protective film 13B are generally called passivation and are made of an inorganic material such as SiN. However, the second protective film 13B is not limited to an inorganic material, and an organic material can be used. Alternatively, the second protective film 13B may be formed separately from the first protective film 13A.

  In addition, the semiconductor device 10 penetrates the semiconductor substrate 11 in the thickness direction, reaches the back surface of the internal electrode 12, and is electrically connected to the internal electrode 12, and a main surface below the semiconductor substrate 11 in the drawing. (Hereinafter referred to as the back surface) and provided on the main surface (hereinafter referred to as the back surface) of the semiconductor substrate below the metal wiring 18 electrically connected to the through electrode 17 and the through electrode 17. An electrically connected metal wiring 18 and an insulating layer 19 that covers the back surface of the semiconductor substrate 11 excluding a part of the metal wiring 18 are provided.

  The through electrode 17 is made of, for example, a metal material mainly composed of Cu or Cu on an inner wall of a through hole (not shown) provided in advance in the semiconductor substrate 11 (that is, a surface of the semiconductor substrate 11 and the internal electrode 12 toward the through hole). It is formed by plating or filling a through-hole with a conductive paste. The depth of the through hole is 10 μm to 300 μm as a general example. The through electrode 17 may be formed so as to fill the through hole, or may be formed in a film shape that covers the inner wall of the through hole with a substantially constant thickness.

  The metal wiring 18 is formed by plating the back surface of the semiconductor substrate 11 with, for example, a metal material mainly composed of Cu or Cu. The thickness of the metal wiring 18 is desirably 5 μm to 20 μm.

  An external electrode 20 made of, for example, a lead-free solder material of Sn—Ag—Cu composition is formed on a portion of the metal wiring 18 not covered with the insulating layer 19 so as to be electrically connected to the metal wiring 18. .

  Furthermore, a transparent substrate 22 made of, for example, optical glass or support glass is formed on the surface of the semiconductor substrate 11 via a protective film 13 and an adhesive layer 21.

  Here, the adhesive layer 21 may be formed so as to cover the surfaces of the semiconductor substrate 11, the first protective film 13A, and the second protective film 13B, as in the semiconductor device 10 shown in FIG. A cavity structure having a hollow with the transparent substrate 22 may be used.

  The structures and materials of the adhesive layer 21 and the transparent substrate 22 are appropriately selected according to the purpose of improving the electrical characteristics of the semiconductor substrate 11 or reinforcing the strength of the semiconductor substrate 11.

  The transparent substrate 22 is particularly effective when the semiconductor device of the present invention is mainly applied to an optical device and when it is applied as a reinforcing plate for the purpose of reinforcing the strength of the semiconductor substrate 11. It is not an essential component and may be omitted depending on the application.

Thus, since the internal electrode 12 and the external electrode 20 are electrically connected via the through electrode 17 and the metal wiring 18, the internal electrode 12, the through electrode 17, the metal wiring 18, and the external electrode 20 are connected. It is possible to exchange electrical signals inside and outside the semiconductor device 10 via the. The semiconductor substrate 11 is electrically insulated from the through electrode 17 and the metal wiring 18 by an insulating film such as SiO _{2 (} not shown).

(Detailed structure of the main part)
2, 3 and 4 are respectively a top view and a cross-sectional view showing an example of a specific shape of the second protective film 13B according to the embodiment of the present invention.

  In any example, the second protective film 13B is provided on the internal electrode 12 so as to be separated from the first protective film 13A, and the area of the second protective film 13B is such that the through electrode 17 is the same as that of the internal electrode 12. It is formed so as to be larger than the area of a region 17A (shown by a broken line, hereinafter referred to as a short region 17A) in contact with the back surface.

  In the example of FIG. 2, the second protective film 13B is circular, and the diameter of the second protective film 13B is larger than the maximum diameter of the region 17A.

  In the example of FIG. 3, the second protective film 13B is square, and the length of one side of the second protective film 13B is larger than the maximum diameter of the region 17A.

  Although the second protective film 13B is square here, other polygons may be used. However, regardless of which polygon is used, the length of the maximum diameter of the polygon is desirably larger than the maximum diameter of the region 17A.

  In the example of FIG. 4, the second protective film 13B has an annular shape, the outer diameter of the second protective film 13B is larger than the diameter of the region 17A, and the inner diameter of the second protective film 13B is larger than the diameter of the region 17A. Is also small.

  Because of the shape and size of the second protective film 13B as described above, the second protection is performed so as to cover the region 17A from the surface of the internal electrode 12, as shown in FIGS. A film 13B can be formed.

  According to such a configuration, the through electrode 17 and the internal electrode 12 are affected by thermal stress applied in a process after the through electrode 17 is formed or environmental load stress such as heat applied in an actual use environment of the semiconductor device 10. Even when stress concentration occurs in the connection portion, the second protective film 13B can suppress the deformation of the internal electrode 12 and prevent the internal electrode 12 from being disconnected, cracked, peeled off, or the like.

  Specifically, since the largest stress concentration occurs in the outer peripheral portion of the region 17A, the internal electrode 12 is reinforced by forming the second protective film 13B so as to cover the outer peripheral portion from the surface of the internal electrode 12. Is done.

  Further, by providing the first protective film 13A and the second protective film 13B apart from each other, the stress concentration on the internal electrode 12 is reduced in the gap between the first protective film 13A and the second protective film 13B. In addition, it is possible to relieve the stress generated by the deformation of the internal electrode 12, and more reliably prevent the occurrence of disconnection, cracking, peeling, or the like of the internal electrode 12.

(Method for manufacturing semiconductor device)
The semiconductor device 10 having the above-described structure can be manufactured by the following process, for example.

  (Step 1) A semiconductor element including a plurality of internal electrodes 12 provided on the surface of the semiconductor substrate 11 is prepared.

  (Step 2) A first protective film 13A having an opening selectively formed on the internal electrode 12 provided on the surface of the semiconductor substrate 11 is formed.

  (Step 3) A second protective film 13B independent of the opening of the first protective film 13A is formed on a part of the surface of the internal electrode 12. In addition, you may perform the process 2 and the process 3 simultaneously.

  (Step 4) A through hole penetrating in the thickness direction of the semiconductor substrate 11 is formed so as to reach the back surface of the internal electrode 12.

  (Step 5) Form a through electrode 17 provided inside the through hole and extending from the inside of the through hole portion onto the surface of the semiconductor substrate 11.

  (Step 6) A metal wiring 18 provided on the back surface of the semiconductor substrate 11 and electrically connected to the through electrode 17 on the back surface of the semiconductor substrate 11 is formed.

  (Step 7) An insulating layer 19 is formed on the back surface of the semiconductor substrate 11 so as to cover the surface of the metal wiring 18.

  (Step 8) An opening of the insulating layer 19 selectively provided on the surface of the metal wiring 18 is formed. An external electrode 20 electrically connected to the metal wiring 18 is formed in the opening of the insulating layer 19 by a solder ball mounting method using a flux, a solder paste printing method, or an electrolytic plating method. For the external electrode 20, for example, a lead-free solder material having a Sn—Ag—Cu composition is used.

  By performing these steps, the semiconductor device 10 shown in FIG. 1 is manufactured.

(Detailed structure of the main part according to the modification)
In the above, in the semiconductor device 10, the second protective film 13 </ b> B is separated from the first protective film 13 </ b> A on the internal electrode 12 in order to enhance the resistance of the internal electrode 12 against the stress concentration from the through electrode 17 to the internal electrode 12. The structure provided is described.

  However, according to the configuration described above, the possibility of occurrence of disconnection, cracks, peeling, etc. in the internal electrode 12 as well as the second protective film 13B can be reduced. However, the second protective film 13B is formed by the internal electrode 12 when stress is concentrated. In some cases, the deformation of the internal electrode 12 cannot be suppressed, and the occurrence of disconnection, cracking, peeling, or the like of the internal electrode 12 cannot be prevented.

  Therefore, in the following modified example, a configuration will be described in which the second protective film 13B increases the force of suppressing the deformation of the internal electrode 12 while reducing the possibility that the internal electrode 12 breaks with the second protective film 13B. .

  5A and 5B are top views showing examples of specific shapes of the second protective film 13B and the third protective film 13C according to the modification of the present invention, respectively.

  In any example, the third protective film 13C is provided on the internal electrode 12 so as to fill a part of the gap between the first protective film 13A and the second protective film 13B. Here, FIG. In (B), the shape of the third protective film 13C is a waveform.

  Here, the third protective film 13C may be made of an inorganic material such as SiN or an organic material.

  The third protective film 13C may be formed separately from one or both of the first protective film 13A and the second protective film 13B, or the first protective film 13A and the second protective film 13C. You may form in the same process as the protective film 13B.

  According to such a configuration, the first protective film 13A and the second protective film 13A are provided by providing the third protective film 13C so as to fill a part of the gap between the first protective film 13A and the second protective film 13B. When the stress concentration occurs, the second protective film 13B is formed while the stress remaining in the gap between the protective electrode 13B and the internal electrode 12 can be relaxed and the stress generated by the deformation of the internal electrode 12 can be relaxed. The force for suppressing the deformation of the internal electrode 12 can be obtained from the first protective film 13A via the third protective film 13C, and the through electrode is peeled off and dropped off toward the second main surface of the semiconductor substrate. Can be prevented.

  Further, in FIG. 5B, the stress applied to the third protective film 13C itself can be further relaxed by making the shape of the third protective film 13C corrugated.

  As described above, according to the semiconductor device of the present invention, the characteristic shape of the protective film provided on the internal electrode realizes a semiconductor device with a wafer level CSP and high resistance against stress concentration. Contributes to the miniaturization, thinness, weight reduction, and performance improvement of various electronic devices.

  The semiconductor device of the present invention is particularly suitable for optical devices (various semiconductor devices such as solid-state imaging devices, photodiodes, laser modules, and various modules), and other LSIs, memories, and vertical devices (diodes, It is also suitable for any semiconductor device such as a transistor and an interposer.

It is sectional drawing which shows an example of the structure of the semiconductor device concerning one Embodiment of this invention. It is the upper side figure and sectional drawing which show an example of the shape of a 2nd protective film. It is the upper side figure and sectional drawing which show an example of the shape of a 2nd protective film. It is the upper side figure and sectional drawing which show an example of the shape of a 2nd protective film. It is a top view which shows an example of the shape of (A) and (B) 2nd protective film and 3rd protective film. It is sectional drawing which shows the structure of the conventional solid-state imaging device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Semiconductor device 11 Semiconductor substrate 12 Internal electrode 13A 1st protective film 13B 2nd protective film 13C 3rd protective film 17 Through electrode 17A Area | region where a through electrode contacts the back surface of an internal electrode 18 Metal wiring 19 Insulating layer 20 External electrode DESCRIPTION OF SYMBOLS 21 Adhesive layer 22 Transparent substrate 100 Solid-state imaging device 100A Solid-state imaging device 101 Semiconductor substrate 102 Imaging area 103 Micro lens 104A Peripheral circuit area 104B Electrode part 105 Adhesive member 106 Transparent substrate 107 Through electrode 108 Metal wiring 109 Insulating resin layer 110 Opening 111 External electrode

Claims (11)

A semiconductor substrate;
A through electrode provided through the semiconductor substrate in the thickness direction;
An internal electrode provided in a portion of the first main surface of the semiconductor substrate where the through electrode reaches, and electrically connected to the through electrode;
A first protective film that is an inorganic material that covers the first main surface excluding a part of the internal electrode;
A portion of the internal electrode that is not covered with the first protective film, a second protective film provided apart from the first protective film;
A semiconductor device comprising: a metal wiring provided on a second main surface opposite to the first main surface of the semiconductor substrate and electrically connected to the through electrode. The semiconductor device according to claim 1, wherein an area of the second protective film is larger than an area of a region where the through electrode is in contact with the internal electrode. The semiconductor device according to claim 1, wherein the second protective film has a circular shape. The semiconductor device according to claim 1, wherein a shape of the second protective film is a polygon. The shape of the second protective film is annular, the outer diameter of the second protective film is larger than the diameter of the region where the through electrode is in contact with the internal electrode, and the inner diameter of the second protective film is The semiconductor device according to claim 1, wherein the semiconductor device is smaller than the diameter of the region. The semiconductor device according to any one of the previous SL second protective film claims 1 to 5 which is inorganic materials. The semiconductor device according to claim 1, wherein the second protective film is an organic material. The semiconductor device further includes:
The third protective film is provided on the internal electrode, and includes a third protective film so as to fill a part of a gap between the first protective film and the second protective film. The semiconductor device described. The semiconductor device further includes:
The semiconductor device according to claim 1, further comprising an insulating layer that covers the second main surface excluding a part of the metal wiring. The semiconductor device further includes:
The semiconductor device according to claim 9, further comprising an external electrode provided in a portion of the metal wiring that is not covered with the insulating layer and electrically connected to the metal wiring.   11. An electronic device comprising: the metal wiring or the external electrode of the semiconductor device according to claim 1 electrically connected to a wiring provided on a surface of a wiring board.

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