JP4405208B2 - 固体撮像装置の製造方法 - Google Patents
固体撮像装置の製造方法 Download PDFInfo
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- JP4405208B2 JP4405208B2 JP2003300217A JP2003300217A JP4405208B2 JP 4405208 B2 JP4405208 B2 JP 4405208B2 JP 2003300217 A JP2003300217 A JP 2003300217A JP 2003300217 A JP2003300217 A JP 2003300217A JP 4405208 B2 JP4405208 B2 JP 4405208B2
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- H—ELECTRICITY
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
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- H10F39/80—Constructional details of image sensors
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- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
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- H10F77/40—Optical elements or arrangements
- H10F77/407—Optical elements or arrangements indirectly associated with the devices
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- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/50—Encapsulations or containers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49133—Assembling to base an electrical component, e.g., capacitor, etc. with component orienting
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49146—Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
- Y10T29/49171—Assembling electrical component directly to terminal or elongated conductor with encapsulating
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
1A 配線基板
2A 光センサ用の半導体チップ(第2電子部品)
2B ロジック用の半導体チップ(第1電子部品)
2C メモリ用の半導体チップ(第1電子部品)
3A〜3C ボンディングワイヤ
4 鏡筒(枠体)
4A 仕切板
4B 開口部
4C 突出部
4C1 位置合わせピン
5 IRフィルタ
6 レンズホルダ(レンズ保持部)
6A 受光窓
7 光学レンズ
8 裏絞り
9 接合部材
10 フレキシブル配線基板
11 チップ部品(第1電子部品)
12 封止材
12M 封止体
12MA 一括封止体
12MC,12MR,12MG 封止材
12MA1 窪み
15 接続端子
16 貫通孔
17A,17B 導体パターン
18A 貫通孔
20 切り溝
21 鏡筒治具
21A 保持窪み
22 メタルマスク
22A 印刷領域
22A1 網目部分
22A2 中空部分
22B マスク領域
23 接着剤
24 スキージ
25 保護フィルム
CM カメラモジュール(固体撮像装置)
MR 製品領域
Claims (7)
- (a)主面と前記主面とは反対側にある裏面とを有し、前記主面上に光センサ用の半導体チップが搭載された配線基板を準備する工程と、
(b)光学レンズを搭載可能な枠体を準備する工程と、
(c)前記配線基板の主面上に前記半導体チップを平面的に囲むように前記枠体を配置し、前記配線基板と前記枠体とを接着剤により互いに固定する工程と、を有し、
前記枠体は、前記配線基板の主面に対向する第1面を有し、
前記第1面は、前記配線基板と固定するための第1部分と、前記第1部分よりも前記半導体チップから離れた位置に配置され、且つ前記半導体チップと前記光学レンズとの位置合わせを行うための第2部分と、を備え、
前記第2部分は、前記配線基板の前記主面から前記裏面に向かう方向に対して前記第1部分よりも突出しており、
前記(c)工程は、前記配線基板と前記枠体の前記第1部分とが前記接着剤により固定され、平面視において前記半導体チップが搭載された位置から見て、前記第2部分が前記接着剤よりも外に配置されることを特徴とする固体撮像装置の製造方法。 - (a)主面と前記主面とは反対側にある裏面とを有し、前記主面上に光センサ用の半導体チップが搭載された配線基板を準備する工程と、
(b)光学レンズを搭載可能な枠体を準備する工程と、
(c)前記配線基板の主面上に前記半導体チップを平面的に囲むように前記枠体を配置し、前記配線基板と前記枠体とを接着剤により互いに固定する工程と、を有し、
前記枠体は、前記配線基板の主面に対向する第1面を有し、
前記第1面は、前記配線基板と固定するための第1部分と、前記第1部分よりも前記半導体チップから離れた位置に配置され、且つ前記半導体チップと前記光学レンズとの位置合わせを行うための第2部分と、を備え、
前記第2部分は、前記配線基板の前記主面から前記裏面に向かう方向に対して前記第1部分よりも突出しており、
前記(c)工程は、前記第1部分に前記半導体チップを取り囲む接着領域が形成され、前記第2部分が前記接着領域よりも前記半導体チップから離れた位置に配置されるように施されることを特徴とする固体撮像装置の製造方法。 - 前記枠体は四角形状を有し、前記第2部分は前記四角形状の角部に配置されていることを特徴とする請求項1または請求項2に記載の固体撮像装置の製造方法。
- 前記配線基板は、ガラスエポキシ系樹脂を絶縁材料とする基板であることを特徴とする請求項1または請求項2に記載の固体撮像装置の製造方法。
- 前記枠体は、前記(c)工程の後に前記光学レンズと前記半導体チップとの間にIRフィルタが配置されるように前記IRフィルタが取り付けられていることを特徴とする請求項1または請求項2に記載の固体撮像装置の製造方法。
- 前記半導体チップは複数のボンディングパッドが配置された主面を有し、
前記配線基板の前記主面にはボンディングワイヤが接続されるためのランドが配置されており、
前記(c)工程の前に前記ボンディングパッドと前記ランドとをボンディングワイヤで接続する工程を有することを特徴とする請求項1または請求項2に記載の固体撮像装置の製造方法。 - 前記配線基板は、前記固体撮像装置内の回路と外部装置とを電気的に接続するための接続端子を有し、
前記接続端子に接合部材を介してフレキシブル配線基板が電気的に接合される工程をさらに有することを特徴とする請求項1または請求項2に記載の固体撮像装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003300217A JP4405208B2 (ja) | 2003-08-25 | 2003-08-25 | 固体撮像装置の製造方法 |
US10/659,433 US7168161B2 (en) | 2003-08-25 | 2003-09-11 | Manufacturing method of solid-state image sensing device |
TW093112549A TW200509379A (en) | 2003-08-25 | 2004-05-04 | Manufacturing method of solid-state imaging apparatus |
CNA2004100593198A CN1591885A (zh) | 2003-08-25 | 2004-06-15 | 固态象传感装置的制造方法 |
US11/480,413 US20060248715A1 (en) | 2003-08-25 | 2006-07-05 | Manufacturing method of solid-state image sensing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003300217A JP4405208B2 (ja) | 2003-08-25 | 2003-08-25 | 固体撮像装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009112537A Division JP4839392B2 (ja) | 2009-05-07 | 2009-05-07 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
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JP2005072258A JP2005072258A (ja) | 2005-03-17 |
JP4405208B2 true JP4405208B2 (ja) | 2010-01-27 |
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Application Number | Title | Priority Date | Filing Date |
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JP2003300217A Expired - Lifetime JP4405208B2 (ja) | 2003-08-25 | 2003-08-25 | 固体撮像装置の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7168161B2 (ja) |
JP (1) | JP4405208B2 (ja) |
CN (1) | CN1591885A (ja) |
TW (1) | TW200509379A (ja) |
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JP4405208B2 (ja) * | 2003-08-25 | 2010-01-27 | 株式会社ルネサステクノロジ | 固体撮像装置の製造方法 |
US20050099659A1 (en) * | 2003-11-10 | 2005-05-12 | Jichen Wu | Image sensor module |
US7417293B2 (en) * | 2004-04-27 | 2008-08-26 | Industrial Technology Research Institute | Image sensor packaging structure |
US8717533B2 (en) * | 2004-06-10 | 2014-05-06 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US8508713B2 (en) * | 2004-06-10 | 2013-08-13 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
EP3203321A1 (en) | 2004-06-10 | 2017-08-09 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
TWI242820B (en) * | 2005-03-29 | 2005-11-01 | Siliconware Precision Industries Co Ltd | Sensor semiconductor device and method for fabricating the same |
CN100405829C (zh) * | 2005-07-08 | 2008-07-23 | 采钰科技股份有限公司 | 影像传感器 |
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TWI309335B (en) * | 2006-02-24 | 2009-05-01 | Advanced Semiconductor Eng | An image sensor package |
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FR2902530A1 (fr) * | 2006-06-19 | 2007-12-21 | St Microelectronics Rousset | Procede de fabrication de lentilles, notamment pour imageur comprenant un diaphragme |
JP2008002837A (ja) * | 2006-06-20 | 2008-01-10 | Denso Corp | 半導体容量式センサの製造方法 |
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EP1912427B1 (en) * | 2006-10-13 | 2009-12-09 | STMicroelectronics (Research & Development) Limited | Camera module lens cap |
KR101070921B1 (ko) * | 2006-10-19 | 2011-10-06 | 삼성테크윈 주식회사 | 이미지 센서용 칩 패키지 및 그 제조방법 |
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US7168161B2 (en) | 2007-01-30 |
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