JP4381860B2 - 補強半導体ウエハに固定された補強板の分離方法およびその装置 - Google Patents
補強半導体ウエハに固定された補強板の分離方法およびその装置 Download PDFInfo
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- JP4381860B2 JP4381860B2 JP2004087175A JP2004087175A JP4381860B2 JP 4381860 B2 JP4381860 B2 JP 4381860B2 JP 2004087175 A JP2004087175 A JP 2004087175A JP 2004087175 A JP2004087175 A JP 2004087175A JP 4381860 B2 JP4381860 B2 JP 4381860B2
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- Prior art keywords
- semiconductor wafer
- reinforcing plate
- sensitive adhesive
- adhesive layer
- pressure
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 131
- 230000003014 reinforcing effect Effects 0.000 title claims description 87
- 238000000034 method Methods 0.000 title claims description 44
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 66
- 238000010438 heat treatment Methods 0.000 claims description 38
- 239000012790 adhesive layer Substances 0.000 claims description 29
- 239000010410 layer Substances 0.000 claims description 27
- 230000007246 mechanism Effects 0.000 claims description 18
- 238000000926 separation method Methods 0.000 claims description 9
- 230000002787 reinforcement Effects 0.000 claims description 5
- 238000005096 rolling process Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 122
- 239000000853 adhesive Substances 0.000 description 17
- 230000001070 adhesive effect Effects 0.000 description 17
- 239000000463 material Substances 0.000 description 5
- 238000005187 foaming Methods 0.000 description 4
- 238000000227 grinding Methods 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920001289 polyvinyl ether Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
Description
前記補強板の分離は、半導体ウエハの任意端部から当該任意端部以外の端部に向けて行なうことを特徴とする補強半導体ウエハに固定された補強板の分離方法、に関する。
2 両面粘着シート
3 補強板
5 固定機構(チャックテーブル)
6 外部エネルギー(加熱ローラー)
Claims (4)
- 半導体ウエハ表面に、少なくとも片面に熱剥離型粘着層を有する両面粘着シートの熱剥離型粘着層が貼付けられており、前記両面粘着シートのもう一方の粘着層には補強板が固定されている補強半導体ウエハから、前記両面粘着シートの熱剥離型粘着層の加熱による剥離作用により両面粘着シートとともに補強板を分離する方法であって、
前記補強板の分離は、前記補強板に加熱ローラーを接触させた状態で、前記加熱ローラーを転動させることにより、半導体ウエハの任意端部から当該任意端部以外の端部に向けて順次加熱して行なうことを特徴とする補強半導体ウエハに固定された補強板の分離方法。 - 補強半導体ウエハが、前記補強板を固定した状態で半導体ウエハの裏面に薄型加工が施されたものであることを特徴とする請求項1記載の補強半導体ウエハに固定された補強板の分離方法。
- 前記補強板の分離を、半導体ウエハの任意端部から直線状に行なうことを特徴とする請求項1または2記載の補強半導体ウエハに固定された補強板の分離方法。
- 請求項1〜3のいずれかに記載の補強半導体ウエハに固定された補強板の分離方法に用いる装置であって、補強半導体ウエハを固定する機構と、補強半導体ウエハの任意端部から直線状に加熱する加熱ローラーと、を有することを特徴とする補強半導体ウエハに固定された補強板の分離装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004087175A JP4381860B2 (ja) | 2004-03-24 | 2004-03-24 | 補強半導体ウエハに固定された補強板の分離方法およびその装置 |
TW094101267A TWI349959B (en) | 2004-03-24 | 2005-01-17 | A method and apparatus for separating stiffening plate fixed on semiconductor wafer |
SG200501187A SG115734A1 (en) | 2004-03-24 | 2005-02-28 | Method and device for separating a reinforcing-plate fixed to a reinforced semiconductor wafer |
SG200705124-6A SG134324A1 (en) | 2004-03-24 | 2005-02-28 | Method and device for separating a reinforcing-plate fixed to a reinforced semiconductor wafer |
CNB2005100550411A CN100437926C (zh) | 2004-03-24 | 2005-03-15 | 固定在加强半导体晶圆上的加强板的分离方法及其装置 |
US11/087,214 US7504316B2 (en) | 2004-03-24 | 2005-03-23 | Method and device for separating a reinforcing-plate fixed to a reinforced semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004087175A JP4381860B2 (ja) | 2004-03-24 | 2004-03-24 | 補強半導体ウエハに固定された補強板の分離方法およびその装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005277037A JP2005277037A (ja) | 2005-10-06 |
JP4381860B2 true JP4381860B2 (ja) | 2009-12-09 |
Family
ID=34990547
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004087175A Expired - Fee Related JP4381860B2 (ja) | 2004-03-24 | 2004-03-24 | 補強半導体ウエハに固定された補強板の分離方法およびその装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7504316B2 (ja) |
JP (1) | JP4381860B2 (ja) |
CN (1) | CN100437926C (ja) |
SG (2) | SG115734A1 (ja) |
TW (1) | TWI349959B (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4800778B2 (ja) * | 2005-05-16 | 2011-10-26 | 日東電工株式会社 | ダイシング用粘着シート及びそれを用いた被加工物の加工方法 |
JP4970863B2 (ja) * | 2006-07-13 | 2012-07-11 | 日東電工株式会社 | 被加工物の加工方法 |
FR2917234B1 (fr) * | 2007-06-07 | 2009-11-06 | Commissariat Energie Atomique | Dispositif multi composants integres dans une matrice semi-conductrice. |
FR2934082B1 (fr) * | 2008-07-21 | 2011-05-27 | Commissariat Energie Atomique | Dispositif multi composants integres dans une matrice |
FR2947948B1 (fr) * | 2009-07-09 | 2012-03-09 | Commissariat Energie Atomique | Plaquette poignee presentant des fenetres de visualisation |
US8963337B2 (en) | 2010-09-29 | 2015-02-24 | Varian Semiconductor Equipment Associates | Thin wafer support assembly |
JP5149977B2 (ja) * | 2011-04-15 | 2013-02-20 | リンテック株式会社 | 半導体ウエハの処理方法 |
JP5958262B2 (ja) * | 2011-10-28 | 2016-07-27 | 信越化学工業株式会社 | ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
JP2013141651A (ja) * | 2012-01-11 | 2013-07-22 | Lintec Corp | エネルギー線照射装置 |
JP2014011242A (ja) * | 2012-06-28 | 2014-01-20 | Nitto Denko Corp | Ledの製造方法 |
JP2014011244A (ja) * | 2012-06-28 | 2014-01-20 | Nitto Denko Corp | Ledの製造方法 |
US8969177B2 (en) * | 2012-06-29 | 2015-03-03 | Applied Materials, Inc. | Laser and plasma etch wafer dicing with a double sided UV-curable adhesive film |
JP6132502B2 (ja) * | 2012-09-27 | 2017-05-24 | 株式会社ディスコ | ウェーハの加工方法 |
TWI494410B (zh) * | 2013-04-10 | 2015-08-01 | Hon Hai Prec Ind Co Ltd | 膠帶 |
CN106695538B (zh) * | 2015-11-18 | 2019-07-05 | 富鼎电子科技(嘉善)有限公司 | 研磨固定装置及使用该研磨固定装置的研磨方法 |
JP7133355B2 (ja) * | 2018-05-17 | 2022-09-08 | 日東電工株式会社 | 粘着シート |
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US4977061A (en) * | 1988-08-19 | 1990-12-11 | Fuji Photo Film Co., Ltd. | Picture card and method of making the same |
JP4137310B2 (ja) * | 1999-09-06 | 2008-08-20 | リンテック株式会社 | 両面粘着シートに固定された物品の剥離方法および剥離装置 |
JP2002043253A (ja) * | 2000-07-26 | 2002-02-08 | Nec Corp | 半導体素子のダイシング方法 |
JP2002075937A (ja) * | 2000-08-30 | 2002-03-15 | Nitto Denko Corp | 半導体ウエハの加工方法 |
JP4651799B2 (ja) * | 2000-10-18 | 2011-03-16 | 日東電工株式会社 | エネルギー線硬化型熱剥離性粘着シート、及びこれを用いた切断片の製造方法 |
US6699770B2 (en) * | 2001-03-01 | 2004-03-02 | John Tarje Torvik | Method of making a hybride substrate having a thin silicon carbide membrane layer |
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JP3987720B2 (ja) * | 2001-12-19 | 2007-10-10 | 日東電工株式会社 | クリーニングシートおよびこれを用いた基板処理装置のクリーニング方法 |
JP3911174B2 (ja) * | 2002-03-01 | 2007-05-09 | シャープ株式会社 | 半導体素子の製造方法および半導体素子 |
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-
2004
- 2004-03-24 JP JP2004087175A patent/JP4381860B2/ja not_active Expired - Fee Related
-
2005
- 2005-01-17 TW TW094101267A patent/TWI349959B/zh not_active IP Right Cessation
- 2005-02-28 SG SG200501187A patent/SG115734A1/en unknown
- 2005-02-28 SG SG200705124-6A patent/SG134324A1/en unknown
- 2005-03-15 CN CNB2005100550411A patent/CN100437926C/zh not_active Expired - Fee Related
- 2005-03-23 US US11/087,214 patent/US7504316B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TWI349959B (en) | 2011-10-01 |
US20050215030A1 (en) | 2005-09-29 |
TW200532788A (en) | 2005-10-01 |
SG134324A1 (en) | 2007-08-29 |
SG115734A1 (en) | 2005-10-28 |
JP2005277037A (ja) | 2005-10-06 |
US7504316B2 (en) | 2009-03-17 |
CN1674235A (zh) | 2005-09-28 |
CN100437926C (zh) | 2008-11-26 |
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