JP4091481B2 - アクティブ・マトリクス有機電界発光素子及びその製造方法 - Google Patents
アクティブ・マトリクス有機電界発光素子及びその製造方法 Download PDFInfo
- Publication number
- JP4091481B2 JP4091481B2 JP2003157754A JP2003157754A JP4091481B2 JP 4091481 B2 JP4091481 B2 JP 4091481B2 JP 2003157754 A JP2003157754 A JP 2003157754A JP 2003157754 A JP2003157754 A JP 2003157754A JP 4091481 B2 JP4091481 B2 JP 4091481B2
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- Prior art keywords
- electrode
- layer
- conductive material
- forming
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011159 matrix material Substances 0.000 title claims description 66
- 238000004519 manufacturing process Methods 0.000 title claims description 44
- 239000010410 layer Substances 0.000 claims description 195
- 239000003990 capacitor Substances 0.000 claims description 88
- 239000004020 conductor Substances 0.000 claims description 68
- 238000000034 method Methods 0.000 claims description 66
- 239000011229 interlayer Substances 0.000 claims description 51
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000011241 protective layer Substances 0.000 claims description 22
- 238000003860 storage Methods 0.000 claims description 16
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 13
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 72
- 239000010409 thin film Substances 0.000 description 44
- 238000005530 etching Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000005401 electroluminescence Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Led Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2002-0031045A KR100484591B1 (ko) | 2001-12-29 | 2002-06-03 | 능동행렬 유기전기발광소자 및 그의 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004046154A JP2004046154A (ja) | 2004-02-12 |
| JP4091481B2 true JP4091481B2 (ja) | 2008-05-28 |
Family
ID=31713066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003157754A Expired - Lifetime JP4091481B2 (ja) | 2002-06-03 | 2003-06-03 | アクティブ・マトリクス有機電界発光素子及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4091481B2 (zh) |
| CN (1) | CN100470842C (zh) |
| TW (1) | TWI255432B (zh) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW521226B (en) | 2000-03-27 | 2003-02-21 | Semiconductor Energy Lab | Electro-optical device |
| JP4507611B2 (ja) * | 2004-01-29 | 2010-07-21 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置、及び電子機器 |
| TWI256269B (en) * | 2004-03-05 | 2006-06-01 | Toshiba Matsushita Display Tec | Method of manufacturing display device |
| JP2005340802A (ja) * | 2004-04-28 | 2005-12-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及び表示装置の作製方法 |
| JP4549889B2 (ja) | 2004-05-24 | 2010-09-22 | 三星モバイルディスプレイ株式會社 | キャパシタ及びこれを利用する発光表示装置 |
| KR100589375B1 (ko) * | 2004-05-24 | 2006-06-14 | 삼성에스디아이 주식회사 | 커패시터 및 이를 이용하는 발광 표시 장치 |
| KR100689316B1 (ko) * | 2004-10-29 | 2007-03-08 | 엘지.필립스 엘시디 주식회사 | 유기전계발광다이오드소자 및 그 제조방법 |
| US7948171B2 (en) * | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US7652291B2 (en) | 2005-05-28 | 2010-01-26 | Samsung Mobile Display Co., Ltd. | Flat panel display |
| KR100712295B1 (ko) | 2005-06-22 | 2007-04-27 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자 및 그 제조 방법 |
| KR100665943B1 (ko) * | 2005-06-30 | 2007-01-09 | 엘지.필립스 엘시디 주식회사 | 유기전계 발광 디스플레이 장치 및 구동방법 |
| US7898623B2 (en) * | 2005-07-04 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device, electronic device and method of driving display device |
| JP4661557B2 (ja) | 2005-11-30 | 2011-03-30 | セイコーエプソン株式会社 | 発光装置および電子機器 |
| JP4939045B2 (ja) | 2005-11-30 | 2012-05-23 | セイコーエプソン株式会社 | 発光装置および電子機器 |
| KR20070063300A (ko) * | 2005-12-14 | 2007-06-19 | 삼성전자주식회사 | 유기 박막 트랜지스터 표시판 및 그 제조 방법 |
| JP5250960B2 (ja) * | 2006-01-24 | 2013-07-31 | セイコーエプソン株式会社 | 発光装置および電子機器 |
| US8193591B2 (en) * | 2006-04-13 | 2012-06-05 | Freescale Semiconductor, Inc. | Transistor and method with dual layer passivation |
| JP2010055070A (ja) * | 2008-07-30 | 2010-03-11 | Sumitomo Chemical Co Ltd | 表示装置および表示装置の製造方法 |
| KR101015850B1 (ko) | 2009-02-09 | 2011-02-24 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 제조 방법 |
| KR102416978B1 (ko) * | 2009-07-10 | 2022-07-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| KR101889918B1 (ko) * | 2010-12-14 | 2018-09-21 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치 및 이의 제조 방법 |
| KR20130025717A (ko) * | 2011-09-02 | 2013-03-12 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법 |
| CN104094431B (zh) * | 2012-02-03 | 2018-03-27 | 皇家飞利浦有限公司 | Oled设备及其制造 |
| KR101942515B1 (ko) * | 2012-05-03 | 2019-01-28 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법 |
| JP6169005B2 (ja) * | 2014-01-17 | 2017-07-26 | 株式会社ジャパンディスプレイ | 発光素子表示装置 |
| JP6098017B2 (ja) * | 2014-02-17 | 2017-03-22 | エバーディスプレイ オプトロニクス（シャンハイ） リミテッド | 薄膜トランジスタアレイ基板及びその製造方法 |
| CN104022142B (zh) * | 2014-06-12 | 2017-10-17 | 四川虹视显示技术有限公司 | 高开口率的顶发射amoled器件与制成方法 |
| CN104022141A (zh) * | 2014-06-12 | 2014-09-03 | 四川虹视显示技术有限公司 | 基于nmos晶体管的倒置顶发射amoled器件及生产方法 |
| KR102174998B1 (ko) * | 2014-07-10 | 2020-11-06 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
| CN104393017B (zh) * | 2014-10-31 | 2017-12-15 | 京东方科技集团股份有限公司 | 阵列基板的制作方法、阵列基板及显示装置 |
| CN107871757B (zh) * | 2016-09-23 | 2020-04-14 | 京东方科技集团股份有限公司 | 有机发光二极管阵列基板及其制备方法、显示装置 |
| JP6222402B1 (ja) * | 2016-10-24 | 2017-11-01 | 三菱電機株式会社 | 化合物半導体デバイス |
| CN113658868B (zh) * | 2016-12-15 | 2023-08-08 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
| JP6873476B2 (ja) * | 2017-08-08 | 2021-05-19 | 株式会社Ｊｏｌｅｄ | アクティブマトリクス表示装置 |
| CN107910347A (zh) * | 2017-10-18 | 2018-04-13 | 深圳市华星光电半导体显示技术有限公司 | 一种显示器件及oled显示面板 |
| CN108447885B (zh) * | 2018-01-17 | 2021-03-09 | 上海天马微电子有限公司 | 有机发光显示面板和显示装置 |
| JP6603826B1 (ja) * | 2018-03-28 | 2019-11-06 | 堺ディスプレイプロダクト株式会社 | 有機ｅｌ表示装置及びその製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3457819B2 (ja) * | 1996-11-28 | 2003-10-20 | カシオ計算機株式会社 | 表示装置 |
| JP4549475B2 (ja) * | 1999-02-12 | 2010-09-22 | 株式会社半導体エネルギー研究所 | 半導体装置、電子機器、および半導体装置の作製方法 |
| US6869635B2 (en) * | 2000-02-25 | 2005-03-22 | Seiko Epson Corporation | Organic electroluminescence device and manufacturing method therefor |
| JP4360015B2 (ja) * | 2000-03-17 | 2009-11-11 | セイコーエプソン株式会社 | 有機ｅｌ表示体の製造方法、半導体素子の配置方法、半導体装置の製造方法 |
| JP2002124678A (ja) * | 2000-10-13 | 2002-04-26 | Sony Corp | 薄膜トランジスタの製造方法 |
| JP3931547B2 (ja) * | 2000-10-18 | 2007-06-20 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法 |
-
2003
- 2003-04-29 TW TW092110050A patent/TWI255432B/zh not_active IP Right Cessation
- 2003-04-30 CN CNB031241344A patent/CN100470842C/zh not_active Expired - Lifetime
- 2003-06-03 JP JP2003157754A patent/JP4091481B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1457220A (zh) | 2003-11-19 |
| TWI255432B (en) | 2006-05-21 |
| TW200307893A (en) | 2003-12-16 |
| JP2004046154A (ja) | 2004-02-12 |
| CN100470842C (zh) | 2009-03-18 |
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