JP4080357B2

JP4080357B2 - Manufacturing method of high heat dissipation plastic package

Info

Publication number: JP4080357B2
Application number: JP2003073077A
Authority: JP
Inventors: 重尚苫米地; 明弘浜野
Original assignee: Sumitomo Metal SMI Electronics Device Inc
Current assignee: Sumitomo Metal SMI Electronics Device Inc
Priority date: 2003-03-18
Filing date: 2003-03-18
Publication date: 2008-04-23
Anticipated expiration: 2023-03-18
Also published as: JP2004281849A

Description

【０００１】
【発明が属する技術分野】
本発明は、半導体素子搭載用の高放熱型プラスチックパッケージの製造方法に係り、より詳細には、導体配線パターン形成用基材と放熱板を貼り合わせて形成する高放熱型プラスチックパッケージの製造方法に関する。
【０００２】
【従来の技術】
近年の半導体素子の高性能化、小型化にともない、半導体素子を搭載するためのプラスチックパッケージは、半導体素子からの発熱量の増大、外部と接続するための端子の多端子化、半導体素子の実装性、低コスト化、低インピーダンス化等の観点から、高放熱構造を有するＢＧＡ（ＢａｌｌＧｒｉｄＡｒｒａｙ）タイプ等の高放熱型プラスチックパッケージが多く用いられている。この高放熱型プラスチックパッケージは、片面又は両面にＣｕ箔を接合して形成した導体層を備えたＢＴ樹脂（ビスマイレイミドトリアジンを主成分にした樹脂）やポリイミド樹脂等からなる１層又は多層の高耐熱性の樹脂基板に熱伝導率の高いＣｕ等の金属板からなる放熱板をプリプレグ等の接着材を介して接合したものである（例えば、特許文献１、特許文献２参照）。
【０００３】
図６（Ａ）〜（Ｄ）を参照して、従来の高放熱型プラスチックパッケージ５０の製造方法を説明する。図６（Ａ）に示すように、Ｃｕ箔５２が接合されているガラスクロスを含有する樹脂基板５１には、表、裏面の導通を取るためにスルーホール５３用の貫通孔５３ａを穿設し、表、裏面及び貫通孔５３ａの壁面に無電解Ｃｕめっき被膜を設け、更に、この無電解Ｃｕめっき被膜に通電して電解Ｃｕめっき被膜を設けてＣｕめっき被膜５４を形成している。次に、図６（Ｂ）に示すように、このＣｕめっき被膜５４上にドライフィルムを貼着し、パターンマスクを当接して露光、現像するフォトリソグラフィ法でエッチングレジストパターンを形成し、エッチングレジストパターンの開口部から露出するＣｕめっき被膜５４及びＣｕ箔５２をエッチングで除去し、ドライフィルムを剥離除去して配線パターン５５を形成している。次に、図６（Ｃ）に示すように、配線パターン５５が形成された樹脂基板５１に半導体素子を搭載するためのキャビティ部を形成するために、ルーター加工機を用いて平面視して実質的に矩形状からなる切り欠き５６を形成する。次に、図６（Ｄ）に示すように、樹脂基板５１とＣｕ板等からなる放熱板５７をプリプレグ等の接着材５８を介して加熱圧着して接合し、高放熱型プラスチックパッケージ５０を作製している。なお、樹脂基板５１の上面側には、通常、必要な部分の配線パターン５５が開口部から露出するソルダーレジスト膜５９が形成されている。
【０００４】
放熱性が良好なＢＧＡ型のパッケージには、放熱性の良好な補強板にＴＡＢ（ＴａｐｅＡｕｔｏｍａｔｅｄＢｏｎｄｉｎｇ）テープを熱硬化性接着材で接合するパッケージが提案されている（例えば、特許文献３参照）。
【０００５】
【特許文献１】
特開平７−３２１２５０号公報（第１−１４頁、第１図）
【特許文献２】
特開平１０−３０８４６７号公報（第１−５頁、第２図）
【特許文献３】
特開２００１−６８５１２号公報（第１−６頁、第１図）
【０００６】
【発明が解決しようとする課題】
しかしながら、前述したような従来の高放熱型プラスチックパッケージ及びその製造方法には、次のような問題がある。
（１）導体配線パターン形成用基材と放熱板は、後付けされる接着材が用いられて接合されているので、接着材部分の厚さによって接合された後の全体の厚さが厚くなり、軽薄短小化が求められている、例えば、携帯電話やパソコン等の電子機器への利用の妨げとなっている。
（２）導体配線パターン形成用基材と放熱板の接合に後付の接着材が用いられる場合には、樹脂基板、又は放熱板に接着材を精度よく塗布したり、あるいは接着シートを精度よく貼着したりするのに、時間、工数、及び材料費を必要とし、高放熱型プラスチックパッケージのコストアップとなっている。
本発明は、このような事情に鑑みてなされたものであって、導体配線パターン形成用基材と放熱板の間に後付けの接着材を用いることなく、安価で、接合精度がよく、厚さの薄い高放熱型プラスチックパッケージ及びその製造方法を提供することを目的とする。
【００１０】
また、前記目的に沿う本発明に係る他の高放熱型プラスチックパッケージの製造方法は、Ｃｕ箔付き樹脂フィルムと放熱板を接合して形成する高放熱型プラスチックパッケージの製造方法であって、Ｃｕ箔付き樹脂フィルムと放熱板を接合して形成する高放熱型プラスチックパッケージの製造方法であって、前記Ｃｕ箔付き樹脂フィルムがＣｕ箔に接着用樹脂を接合して形成され、前記Ｃｕ箔付き樹脂フィルムに半導体素子を搭載するためのキャビティ部用の切り欠きを打ち抜きプレス加工で穿設する工程と、前記放熱板がスルーホール用の貫通孔を有する金属製部材からなり、該金属製部材の一方の表面と前記切り欠きを形成した前記Ｃｕ箔付き樹脂フィルムの前記接着用樹脂部分を直接当接すると同時に、前記金属製部材の他方の表面にプリプレグを介してＣｕ箔を当接し加熱圧着して貼り合せて、前記スルーホール用の貫通孔に前記接着用樹脂及びプリプレグを充填する工程と、この貼り合せる工程の後に、前記金属製部材からなる放熱板のスルーホール用の貫通孔の壁面が樹脂で被覆されるようにスルーホール用の孔を穿設して、前記放熱板の一方の表面に貼り合せたＣｕ箔付き樹脂フィルムのＣｕ箔と他方の面にプリプレグを介して貼り合せたＣｕ箔を導通状態にする工程と、前記Ｃｕ箔付き樹脂フィルムに導体配線パターンを形成する工程及び前記プリプレグを介したＣｕ箔に導体配線パターンを形成する工程を有する。これにより、半導体素子を搭載するためのキャビティ部用の切り欠きがルーター加工機を用いることなく容易に形成でき、Ｃｕ箔付き樹脂フィルムと放熱板を接着材なしで容易に、精度よく、一度に接合できるので、厚みの薄い安価な高放熱型プラスチックパッケージの製造方法を提供できる。また、キャビティ部の放熱板上に半導体素子が実装でき、半導体素子からの発熱を効率よく放熱でき、放熱板の裏面側にも配線パターンを有する高放熱型プラスチックパッケージの製造方法を提供できる。
【００１１】
更に、前記目的に沿う本発明に係る更に他の高放熱型プラスチックパッケージの製造方法は、Ｃｕ箔付き樹脂フィルムと放熱板を接合して形成する高放熱プラスチックパッケージの製造方法であって、前記Ｃｕ箔付き樹脂フィルムがＣｕ箔に接着用樹脂を接合して形成される第１と第２のＣｕ箔付き樹脂フィルムからなり、該第１のＣｕ箔付き樹脂フィルムに半導体素子を搭載するためのキャビティ部用の切り欠きを打ち抜きプレス加工で穿設する工程と、前記放熱板がスルーホール用の貫通孔を有する金属製部材からなり、該金属製部材の一方の表面と前記切り欠きを形成した前記第１のＣｕ箔付き樹脂フィルムの前記接着用樹脂部分を直接当接すると同時に、前記金属製部材の他方の表面に前記第２のＣｕ箔付き樹脂フィルムの前記接着用樹脂部分を直接当接し加熱圧着して貼り合せて、前記スルーホール用の貫通孔に前記接着用樹脂及びプリプレグを充填する工程と、この貼り合せる工程の後に、前記金属製部材からなる放熱板のスルーホール用の貫通孔の壁面が樹脂で被覆されるようにスルーホール用の孔を穿設して、前記放熱板の上下面のＣｕ箔を導通状態にする工程と、前記第１と第２のＣｕ箔付き樹脂フィルムに導体配線パターンを形成する工程を有する。これにより、半導体素子を搭載するためのキャビティ部用の切り欠きがルーター加工機を用いることなく容易に形成でき、Ｃｕ箔付き樹脂フィルムと放熱板を接着材なしで容易に、精度よく、一度に接合できるので、厚みの薄い安価な高放熱型プラスチックパッケージの製造方法を提供できる。また、キャビティ部の放熱板上に半導体素子が実装でき、半導体素子からの発熱を効率よく放熱でき、放熱板の裏面側にも配線パターンを有する高放熱型プラスチックパッケージの製造方法を提供できる。
【００１２】
【発明の実施の形態】
続いて、添付した図面を参照しつつ、本発明を具体化した実施の形態について説明し、本発明の理解に供する。
ここに、図１（Ａ）、（Ｂ）はそれぞれ本発明の一実施の形態に係る高放熱型プラスチックパッケージの斜視図、縦断面図、図２（Ａ）〜（Ｃ）はそれぞれ本発明の一実施の形態に係る変形例及び他の変形例の高放熱型プラスチックパッケージの上面側斜視図、下面側斜視図、縦断面図、図３（Ａ）〜（Ｅ）はそれぞれ本発明の一実施の形態に係る高放熱型プラスチックパッケージの製造方法の説明図、図４（Ａ）〜（Ｅ）はそれぞれ本発明の一実施の形態に係る変形例の高放熱型プラスチックパッケージの製造方法の説明図、図５（Ａ）〜（Ｃ）はそれぞれ本発明の一実施の形態に係る他の変形例の高放熱型プラスチックパッケージの製造方法の説明図である。
【００１３】
図１（Ａ）、（Ｂ）に示すように、本発明の一実施の形態に係る高放熱型プラスチックパッケージ１０は、Ｃｕ箔付き樹脂フィルム１１と放熱板１２で構成されている。Ｃｕ箔付き樹脂フィルム１１は、Ｃｕ箔に、ガラスクロス基材を含まない接着用樹脂１３を塗布してフィルム状に形成されている。このＣｕ箔付き樹脂フィルム１１には、平面視してパッケージの実質的中央部に半導体素子を搭載させるためのキャビティ部１４用の切り欠き１５が打ち抜きプレス等で穿孔して設けられている。一方、放熱板１２は、半導体素子からの発熱を効率よく放熱させることができるように熱伝導率の良いＣｕ板等からなり、接着用樹脂１３との接合強度を向上させるために表面に表面粗化が施されている。そして、Ｃｕ箔付き樹脂フィルム１１と放熱板１２は、Ｃｕ箔付き樹脂フィルム１１を構成する熱硬化性の接着用樹脂１３と放熱板１２を当接させ、加熱しながら加圧して接着用樹脂１３を硬化させながら接合されている。この高放熱型プラスチックパッケージ１０には、Ｃｕ箔付き樹脂フィルム１１のＣｕ箔上にＣｕめっきが施された後、フォトリソグラフィ法とエッチングによって形成される導体配線パターン１６が設けられている。更に、この高放熱型プラスチックパッケージ１０には、導体配線パターン１６が形成された面に、導体配線パターン１６の必要部分を開口部から露出させるためにソルダーレジスト膜１７が設けられている。
【００１４】
図２（Ａ）〜（Ｃ）に示すように、本発明の一実施の形態に係る変形例及び他の変形例の高放熱型プラスチックパッケージ１０ａ、１０ｂは、前記の高放熱型プラスチックパッケージ１０の場合の構造に加えて半導体素子からの発熱を放熱するための放熱板１２ａの下面側にも導体配線パターン１６ａが設けられている。この場合の放熱板１２ａには、上、下面側の導体配線パターン１６、１６ａ間の電気的導通を取るためのスルーホール１９用の貫通孔１８が、予めドリル等を用いて設けられている。そして、この貫通孔１８には、貫通孔１８の壁面で短絡しないように形成された導体配線によって、上、下面側の導体配線パターン１６、１６ａ間の電気的導通が形成されている。この高放熱型プラスチックパッケージ１０ａは、上面側に半導体素子を実装し、下面側に半田ボール等の外部接続端子を接続するキャビティアップ型のパッケージが構成でき、半導体素子からの発熱を効率よく放熱させると同時に、パッケージの両面を有効に利用して、パッケージの寸法を極めて小さくすることができる。なお、本発明の一実施の形態に係る変形例の高放熱型プラスチックパッケージ１０ａは、下面側の導体配線パターン１６ａがプリプレグを介して接合されているＣｕ箔をもとに形成されたものである。また、本発明の一実施の形態に係る他の変形例の高放熱型プラスチックパッケージ１０ｂは、下面側の導体配線パターン１６ａがＣｕ箔付き樹脂フィルム１１をもとにして形成されたものである。
【００１５】
次いで、図３（Ａ）〜（Ｅ）を参照しながら本発明の一実施の形態に係る高放熱型プラスチックパッケージ１０の製造方法を説明する。
図３（Ａ）に示すように、放熱板１２と接合して高放熱型プラスチックパッケージ１０を作製するためのＣｕ箔付き樹脂フィルム１１は、１０〜２０μｍ程度の厚みのＣｕ箔２０に、ガラスクロス基材を含まない熱硬化型のＢステージ状態の接着用樹脂１３をドクターブレード法や、ロールコーター法等で５０〜１００μｍ程度に塗布してフィルム状に形成している。なお、Ｃｕ箔は、予め、還元性雰囲気で熱処理を行ったものを用いると、接着用樹脂１３を接合した後に安定した引き剥がし強さを得ることができる。
【００１６】
次に、図３（Ｂ）に示すように、Ｃｕ箔付き樹脂フィルム１１には、半導体素子を搭載するためのキャビティ部１４（図３（Ｅ）参照）用の切り欠き１５を打ち抜きプレス加工機で穿設して設けている。Ｃｕ箔付き樹脂フィルム１１には、Ｃｕ箔２０と接着用樹脂１３の接合体であるので、樹脂がガラスクロス等を含まず接合体自体が薄いので、ルーター加工機等を用いることなく、打ち抜きプレス加工機の打ち抜きで効率的に精度よく、安価に切り欠き１５を形成することができる。
【００１７】
次に、図３（Ｃ）に示すように、Ｃｕや、Ｃｕ合金等の熱伝導率の高い金属製部材からなる放熱板１２には、ホーニィング加工や、ブラックオキサイド等によって表面に表面粗化２１を行っている。この表面粗化２１によって、接着用樹脂１３と貼り合せた時の接合強度を向上させることができる。
【００１８】
次に、図３（Ｄ）に示すように、Ｃｕ箔付き樹脂フィルム１１と放熱板１２は、Ｃｕ箔付き樹脂フィルム１１の接着用樹脂１３側と放熱板１２を直接当接させ、真空プレス等を用いて加熱圧着している。真空プレス機を用いて加熱圧着する場合には、例えば、真空度を５０ｍｍＨｇ以下とし、温度１７０〜１９０℃、圧力２〜３ＭＰａ、１７５℃以上の温度中を４０分以上加熱及び加圧を保持させて接着用樹脂１３を硬化させて貼り合わせている。
【００１９】
次に、図３（Ｅ）に示すように、Ｃｕ箔付き樹脂フィルム１１のＣｕ箔２０上には、無電解Ｃｕめっき及び電界ＣｕめっきからなるＣｕめっき（図示せず）が施された後、通常のセミアディテブや、スブトラクティブ等によって導体配線パターン１６が形成される。更に、導体配線パターン１６が形成された面に、導体配線パターン１６の必要部分を開口部から露出させるためにソルダーレジスト膜１７が形成されることで、高放熱型プラスチックパッケージ１０が作製されている。
【００２０】
次いで、図４（Ａ）〜（Ｅ）を参照しながら本発明の一実施の形態に係る変形例の高放熱型プラスチックパッケージ１０ａの製造方法を説明する。
図４（Ａ）に示すように、高放熱型プラスチックパッケージ１０ａを作製するためのＣｕ箔付き樹脂フィルム１１は、高放熱型プラスチックパッケージ１０の場合と同様にＣｕ箔２０に接着用樹脂１３を塗布してフィルム状に作製され、打ち抜きプレス加工機で切り欠き１５を形成している。
【００２１】
次に、図４（Ｂ）に示すように、Ｃｕや、Ｃｕ合金等の熱伝導率の高い金属製部材からなる放熱板１２ａには、パッケージの上、下面側の導体配線パターン１６、１６ａ（図４（Ｅ）参照）間の電気的導通を取るためのスルーホール１９用の貫通孔１８をドリルマシーン等を用いて形成している。更に、放熱板１２ａには、ホーニィング加工や、ブラックオキサイド等によって表面に表面粗化２１を行っている。そして、放熱板１２ａの下面側には、下面側の導体配線パターン１６ａを形成するためのプリプレグ２２及びＣｕ箔２０ａを準備している。
【００２２】
次に、図４（Ｃ）に示すように、放熱板１２ａの上面側の表面には、切り欠き１５を形成したＣｕ箔付き樹脂フィルム１１の接着用樹脂１３を直接当接させると同時に、放熱板１２ａの下面側の表面には、プリプレグ２２を介してＣｕ箔２０ａを当接し、高放熱型プラスチックパッケージ１０の場合と同様に真空プレス等を用いて加熱しながら加圧して、全体を一度に接合して貼り合わせている。この貼り合せによって、放熱板１２ａの貫通孔１８内には、接着用樹脂１３やプリプレグ２２で充填される。
【００２３】
次に、図４（Ｄ）に示すように、接着用樹脂１３やプリプレグ２２で充填された貫通孔１８の壁面が樹脂で被覆されるようにして貫通孔１８の径よりも小さい径からなるスルーホール１９用の孔２３をドリルマシーン等で穿設する。そして、無電解Ｃｕめっき及び電界Ｃｕめっきを施して孔２３の壁面にＣｕめっき膜２４が形成されてなるスルーホール１９を介して上面側のＣｕ箔２０及びＣｕめっき膜２４と、下面側のＣｕ箔２０ａ及びＣｕめっき膜２４とを電気的に導通状態とする。
【００２４】
次に、図４（Ｅ）に示すように、高放熱型プラスチックパッケージ１０の場合と同様に、上面側のＣｕ箔２０及びＣｕめっき膜２４と、下面側のＣｕ箔２０ａ及びＣｕめっき膜２４の両面に、通常のセミアディテブ法や、サブトラクティブ法等によって導体配線パターン１６、１６ａが形成される。更に、導体配線パターン１６、１６ａが形成された面に、導体配線パターン１６、１６ａの必要部分を開口部から露出させるためにソルダーレジスト膜１７、１７ａが形成されることで、高放熱型プラスチックパッケージ１０ａが作製されている。なお、半導体素子が搭載されるキャビティ部１４の下側には、放熱板１２ａに接続しソルダーレジスト膜１７ａの開口部から露出するサーマルビア（図示せず）を設けることで、半導体素子からの発熱を放熱する効果を更に向上することができる。
【００２５】
次いで、図５（Ａ）〜（Ｃ）を参照しながら本発明の一実施の形態に係る他の変形例の高放熱型プラスチックパッケージ１０ｂの製造方法を説明する。
図５（Ａ）に示すように、高放熱型プラスチックパッケージ１０ｂを作製するための第１のＣｕ箔付き樹脂フィルム１１ａ及びＣｕや、Ｃｕ合金等の熱伝導率の高い金属製部材からなる放熱板１２ａは、高放熱型プラスチックパッケージ１０ａの場合のＣｕ箔付き樹脂フィルム１１及び放熱板１２ａと同様に作製されている。そして、放熱板１２ａの下面側には、下面側の導体配線パターン１６ａを形成するための第１のＣｕ箔付き樹脂フィルム１１ａと同様の第２のＣｕ箔付き樹脂フィルム１１ｂを準備している。
【００２６】
次に、図５（Ｂ）に示すように、放熱板１２ａの上面側の表面には、切り欠き１５を形成した第１のＣｕ箔付き樹脂フィルム１１ａの接着用樹脂１３を直接当接させると同時に、放熱板１２ａの下面側の表面には、第２のＣｕ箔付き樹脂フィルム１１ｂの接着用樹脂１３を直接当接し、高放熱型プラスチックパッケージ１０ａの場合と同様に真空プレス等を用いて加熱しながら加圧して、全体を一度に接合して貼り合わせている。この貼り合せによって、放熱板１２ａの貫通孔１８内には、上、下面からの接着用樹脂１３で充填される。
【００２７】
次に、図５（Ｃ）に示すように、接着用樹脂１３で充填された貫通孔１８の壁面が樹脂で被覆されるようにして、高放熱型プラスチックパッケージ１０ａの場合と同様に貫通孔１８の径よりも小さい径からなるスルーホール１９用の孔２３をドリルマシーン等で穿設する。そして、無電解Ｃｕめっき及び電界Ｃｕめっきを施して孔２３の壁面にＣｕめっき膜２４が形成されてなるスルーホール１９を介して上面側のＣｕ箔２０及びＣｕめっき膜２４と、下面側のＣｕ箔２０ａ及びＣｕめっき膜２４とを電気的に導通状態とする。更に、上面側のＣｕ箔２０及びＣｕめっき膜２４と、下面側のＣｕ箔２０ａ及びＣｕめっき膜２４の両面には、導体配線パターン１６、１６ａが形成され、導体配線パターン１６、１６ａが形成された面には、導体配線パターン１６、１６ａの必要部分を開口部から露出するソルダーレジスト膜１７、１７ａを形成して、高放熱型プラスチックパッケージ１０ｂが作製されている。なお、高放熱型プラスチックパッケージ１０ａの場合と同様に、半導体素子が搭載されるキャビティ部１４の下側にサーマルビア（図示せず）を設けることで、半導体素子からの発熱を放熱する効果を更に向上することができる。
【００２８】
【発明の効果】
請求項１記載の高放熱型プラスチックパッケージの製造方法は、Ｃｕ箔付き樹脂フィルムと放熱板を接合して形成する高放熱型プラスチックパッケージの製造方法であって、Ｃｕ箔付き樹脂フィルムがＣｕ箔に接着用樹脂を接合して形成され、Ｃｕ箔付き樹脂フィルムに半導体素子を搭載するためのキャビティ部用の切り欠きを打ち抜きプレス加工で穿設する工程と、放熱板がスルーホール用の貫通孔を有する金属製部材からなり、金属製部材の一方の表面と切り欠きを形成したＣｕ箔付き樹脂フィルムの接着用樹脂部分を直接当接すると同時に、金属製部材の他方の表面にプリプレグを介してＣｕ箔を当接し加熱圧着して貼り合せる工程を有するので、切り欠きがルーター加工機を用いることなく容易に形成でき、Ｃｕ箔付き樹脂フィルムと放熱板を接着材なしで容易に、精度よく、一度に接合でき、厚みの薄い安価な高放熱型プラスチックパッケージの製造方法を提供できる。また、キャビティ部の放熱板上に半導体素子が実装でき、半導体素子からの発熱を効率よく放熱でき、放熱板の裏面側にも配線パターンを有する高放熱型プラスチックパッケージの製造方法を提供できる。
【００３２】
請求項２記載の高放熱型プラスチックパッケージの製造方法は、Ｃｕ箔付き樹脂フィルムと放熱板を接合して形成する高放熱型プラスチックパッケージの製造方法であって、Ｃｕ箔付き樹脂フィルムがＣｕ箔に接着用樹脂を接合して形成される第１と第２のＣｕ箔付き樹脂フィルムからなり、第１のＣｕ箔付き樹脂フィルムに半導体素子を搭載するためのキャビティ部用の切り欠きを打ち抜きプレス加工で穿設する工程と、放熱板がスルーホール用の貫通孔を有する金属製部材からなり、金属製部材の一方の表面と切り欠きを形成した第１のＣｕ箔付き樹脂フィルムの接着用樹脂部分を直接当接すると同時に、金属製部材の他方の表面に第２のＣｕ箔付き樹脂フィルムの接着用樹脂部分を直接当接し加熱圧着して貼り合せる工程を有するので、切り欠きがルーター加工機を用いることなく容易に形成でき、Ｃｕ箔付き樹脂フィルムと放熱板を接着材なしで容易に、精度よく、一度に接合でき、厚みの薄い安価な高放熱型プラスチックパッケージの製造方法を提供できる。また、キャビティ部の放熱板上に半導体素子が実装でき、半導体素子からの発熱を効率よく放熱でき、放熱板の裏面側にも配線パターンを有する高放熱型プラスチックパッケージの製造方法を提供できる。
【図面の簡単な説明】
【図１】（Ａ）、（Ｂ）はそれぞれ本発明の一実施の形態に係る高放熱型プラスチックパッケージの斜視図、縦断面図である。
【図２】（Ａ）〜（Ｃ）はそれぞれ本発明の一実施の形態に係る変形例及び他の変形例の高放熱型プラスチックパッケージの上面側斜視図、下面側斜視図、縦断面図である。
【図３】（Ａ）〜（Ｅ）はそれぞれ本発明の一実施の形態に係る高放熱型プラスチックパッケージの製造方法の説明図である。
【図４】（Ａ）〜（Ｅ）はそれぞれ本発明の一実施の形態に係る変形例の高放熱型プラスチックパッケージの製造方法の説明図である。
【図５】（Ａ）〜（Ｃ）はそれぞれ本発明の一実施の形態に係る他の変形例の高放熱型プラスチックパッケージの製造方法の説明図である。
【図６】（Ａ）〜（Ｄ）は従来の高放熱型プラスチックパッケージの製造方法の説明図である。
【符号の説明】
１０、１０ａ、１０ｂ：高放熱型プラスチックパッケージ、１１：Ｃｕ箔付き樹脂フィルム、１１ａ：第１のＣｕ箔付き樹脂フィルム、１１ｂ：第２のＣｕ箔付き樹脂フィルム、１２、１２ａ：放熱板、１３：接着用樹脂、１４：キャビティ部、１５：切り欠き、１６、１６ａ：導体配線パターン、１７、１７ａ：ソルダーレジスト膜、１８：貫通孔、１９：スルーホール、２０、２０ａ：Ｃｕ箔、２１：表面粗化、２２：プリプレグ、２３：孔、２４：Ｃｕめっき膜[0001]
[Technical field to which the invention belongs]
The present invention relates to a method for manufacturing a high heat dissipation plastic package for mounting a semiconductor element, and more particularly to a method for manufacturing a high heat dissipation plastic package in which a conductive wiring pattern forming base material and a heat dissipation plate are bonded together. .
[0002]
[Prior art]
With recent high performance and miniaturization of semiconductor devices, plastic packages for mounting semiconductor devices have increased the amount of heat generated from the semiconductor devices, increased the number of terminals for external connection, and mounting of semiconductor devices From the viewpoints of performance, cost reduction, impedance reduction, and the like, high heat dissipation plastic packages such as BGA (Ball Grid Array) type having a high heat dissipation structure are often used. This high heat dissipation type plastic package has a single layer or multiple layers made of BT resin (resin mainly composed of bis-maleimide triazine) or polyimide resin provided with a conductor layer formed by bonding Cu foil on one side or both sides. A heat radiating plate made of a metal plate such as Cu having a high thermal conductivity is joined to a high heat resistant resin substrate via an adhesive such as a prepreg (for example, see Patent Document 1 and Patent Document 2).
[0003]
With reference to FIGS. 6A to 6D, a conventional method of manufacturing a high heat dissipation plastic package 50 will be described. As shown in FIG. 6 (A), a through hole 53a for a through hole 53 is formed in a resin substrate 51 containing a glass cloth to which a Cu foil 52 is bonded in order to make the front and back surfaces conductive. Further, an electroless Cu plating film is provided on the front surface, the back surface, and the wall surface of the through-hole 53a, and the Cu plating film 54 is formed by energizing the electroless Cu plating film to provide the electrolytic Cu plating film. Next, as shown in FIG. 6B, a dry film is stuck on the Cu plating film 54, an etching resist pattern is formed by a photolithography method in which a pattern mask is brought into contact with exposure and development, and an etching resist is formed. The Cu plating film 54 and the Cu foil 52 exposed from the opening of the pattern are removed by etching, and the dry film is peeled and removed to form the wiring pattern 55. Next, as shown in FIG. 6C, in order to form a cavity part for mounting a semiconductor element on the resin substrate 51 on which the wiring pattern 55 is formed, it is substantially viewed in plan using a router processing machine. A notch 56 having a rectangular shape is formed. Next, as shown in FIG. 6D, a resin substrate 51 and a heat radiating plate 57 made of a Cu plate or the like are joined by thermocompression bonding through an adhesive 58 such as a prepreg, thereby producing a high heat radiating plastic package 50. is doing. Note that a solder resist film 59 is usually formed on the upper surface side of the resin substrate 51 so that a necessary portion of the wiring pattern 55 is exposed from the opening.
[0004]
As a BGA type package with good heat dissipation, a package has been proposed in which a TAB (Tape Automated Bonding) tape is joined to a reinforcing plate with good heat dissipation with a thermosetting adhesive (for example, see Patent Document 3). .
[0005]
[Patent Document 1]
Japanese Patent Laid-Open No. 7-321250 (page 1-14, FIG. 1)
[Patent Document 2]
Japanese Patent Laid-Open No. 10-308467 (page 1-5, FIG. 2)
[Patent Document 3]
Japanese Unexamined Patent Publication No. 2001-68512 (page 1-6, FIG. 1)
[0006]
[Problems to be solved by the invention]
However, the conventional high heat dissipation plastic package and the manufacturing method thereof as described above have the following problems.
(1) Since the base material for forming a conductor wiring pattern and the heat radiating plate are joined by using an adhesive to be attached later, the overall thickness after joining is increased by the thickness of the adhesive part, For example, it is hindering use in electronic devices such as mobile phones and personal computers that are required to be light and thin.
(2) When a retrofitting adhesive is used to join the conductor wiring pattern forming substrate and the heat sink, the adhesive is applied to the resin substrate or the heat sink with high accuracy, or the adhesive sheet is accurately applied. Adhering requires time, man-hours, and material costs, which increases the cost of the high heat dissipation plastic package.
The present invention has been made in view of such circumstances, and is inexpensive, has good joining accuracy, and is thin without using a retrofitting adhesive between the conductor wiring pattern forming base material and the heat sink. It is an object of the present invention to provide a high heat dissipation plastic package and a manufacturing method thereof.
[0010]
Further, another high heat dissipation plastic package manufacturing method according to the present invention in accordance with the above object is a method of manufacturing a high heat dissipation plastic package formed by bonding a resin film with a Cu foil and a heat dissipation plate, and comprising a Cu foil. A method of manufacturing a high heat dissipation plastic package formed by bonding a resin film with a heat sink and a heat sink, wherein the resin film with a Cu foil is formed by bonding an adhesive resin to a Cu foil, and the resin film with a Cu foil A step of punching a notch for a cavity for mounting a semiconductor element on the substrate by punching and a metal member having a through hole for a through hole, and one of the metal members At the same time as directly contacting the adhesive resin part of the resin film with Cu foil formed with the surface and the notch on the other surface of the metal member After the step of filling the through hole for the through-hole with the adhesive resin and the prepreg by abutting the Cu foil through the prepreg and bonding it by thermocompression bonding, and after the step of bonding, the metal member is used. A through hole for the through hole is formed so that the wall surface of the through hole for the through hole of the heat sink is covered with a resin, and the Cu foil of the resin film with Cu foil bonded to one surface of the heat sink A step of bringing the Cu foil bonded to the other surface through the prepreg into a conductive state, a step of forming a conductor wiring pattern on the resin film with the Cu foil, and a formation of the conductor wiring pattern on the Cu foil via the prepreg Process. As a result, the notch for the cavity for mounting the semiconductor element can be easily formed without using a router processing machine, and the resin film with a Cu foil and the heat sink can be easily, accurately and at once without an adhesive. Since they can be joined, a method for manufacturing a thin and inexpensive high heat dissipation plastic package can be provided. In addition, a semiconductor element can be mounted on the heat sink of the cavity portion, heat generated from the semiconductor element can be efficiently radiated, and a method of manufacturing a high heat dissipation type plastic package having a wiring pattern on the back side of the heat sink can be provided.
[0011]
Furthermore, another manufacturing method of a high heat dissipation plastic package according to the present invention that meets the above-mentioned object is a manufacturing method of a high heat dissipation plastic package formed by joining a resin film with Cu foil and a heat dissipation plate, A cavity for mounting a semiconductor element on the first Cu foil resin film, wherein the resin film with foil is formed of first and second resin films with Cu foil formed by bonding an adhesive resin to Cu foil. A step of punching a notch for a part by a punching press process, and the heat sink is made of a metal member having a through hole for a through hole, and the notch is formed on one surface of the metal member The adhesion of the second Cu foil resin film to the other surface of the metal member at the same time as directly contacting the adhesive resin portion of the first Cu foil resin film By bonding the resin portion directly abuts thermocompression bonding, a step you fill the adhesive resin and the prepreg through-holes for the through hole, after this be bonded process, the heat radiating plate made of said metallic member Forming a through hole so that the wall surface of the through hole for the through hole is covered with resin, and bringing the Cu foils on the upper and lower surfaces of the heat sink into a conductive state, and the first and first And 2) forming a conductor wiring pattern on the resin film with Cu foil . As a result, the notch for the cavity for mounting the semiconductor element can be easily formed without using a router processing machine, and the resin film with a Cu foil and the heat sink can be easily, accurately and at once without an adhesive. Since they can be joined, a method for manufacturing a thin and inexpensive high heat dissipation plastic package can be provided. In addition, a semiconductor element can be mounted on the heat sink of the cavity portion, heat generated from the semiconductor element can be efficiently radiated, and a method of manufacturing a high heat dissipation type plastic package having a wiring pattern on the back side of the heat sink can be provided.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
Next, embodiments of the present invention will be described with reference to the accompanying drawings to provide an understanding of the present invention.
1A and 1B are a perspective view and a longitudinal sectional view of a high heat dissipation plastic package according to an embodiment of the present invention, respectively, and FIGS. The top side perspective view, bottom side perspective view, longitudinal sectional view, and FIGS. 3A to 3E of the high heat radiation type plastic package of the modification according to the embodiment and other modifications are respectively an embodiment of the present invention. Explanatory drawing of the manufacturing method of the high thermal radiation type plastic package which concerns on this form, FIG.4 (A)-(E) is explanatory drawing of the manufacturing method of the high thermal radiation type plastic package of the modification which concerns on one embodiment of this invention, respectively. 5 (A) to 5 (C) are explanatory views of a method for manufacturing a high heat radiation type plastic package of another modification according to the embodiment of the present invention.
[0013]
As shown in FIGS. 1A and 1B, a high heat dissipation plastic package 10 according to an embodiment of the present invention includes a resin film 11 with Cu foil and a heat dissipation plate 12. The resin film 11 with Cu foil is formed into a film by applying an adhesive resin 13 that does not include a glass cloth base material to a Cu foil. The resin film 11 with Cu foil is provided with a notch 15 for a cavity portion 14 for mounting a semiconductor element in a substantially central portion of the package in a plan view by punching with a punching press or the like. On the other hand, the heat radiating plate 12 is made of a Cu plate or the like having a high thermal conductivity so that heat generated from the semiconductor element can be efficiently radiated, and the surface is roughened to improve the bonding strength with the adhesive resin 13. Has been applied. Then, the resin film 11 with Cu foil and the heat radiating plate 12 are brought into contact with the thermosetting adhesive resin 13 and the heat radiating plate 12 constituting the resin film 11 with Cu foil, and are heated and pressed to apply the adhesive resin 13. It is joined while curing. This high heat dissipation plastic package 10 is provided with a conductor wiring pattern 16 formed by photolithography and etching after Cu plating is performed on the Cu foil of the resin film 11 with Cu foil. Further, the high heat dissipation plastic package 10 is provided with a solder resist film 17 on the surface on which the conductor wiring pattern 16 is formed in order to expose a necessary portion of the conductor wiring pattern 16 from the opening.
[0014]
As shown in FIGS. 2 (A) to 2 (C), the high heat dissipation plastic package 10a, 10b of the modified example according to the embodiment of the present invention and other modified examples is the same as the high heat dissipation plastic package 10 described above. In addition to the case structure, a conductor wiring pattern 16a is also provided on the lower surface side of the heat radiating plate 12a for radiating heat generated from the semiconductor element. In this case, the heat radiating plate 12a is previously provided with a through hole 18 for a through hole 19 for establishing electrical continuity between the upper and lower conductor wiring patterns 16 and 16a using a drill or the like. In the through hole 18, electrical continuity between the upper and lower conductor wiring patterns 16 and 16 a is formed by conductor wiring formed so as not to be short-circuited on the wall surface of the through hole 18. The high heat dissipation plastic package 10a can be configured as a cavity-up type package in which a semiconductor element is mounted on the upper surface side and an external connection terminal such as a solder ball is connected to the lower surface side, and heat generated from the semiconductor element is efficiently radiated. At the same time, the size of the package can be made extremely small by effectively using both sides of the package. The modified high heat radiation type plastic package 10a according to the embodiment of the present invention is formed on the basis of a Cu foil in which a conductor wiring pattern 16a on the lower surface side is bonded via a prepreg. . In addition, a high heat radiation type plastic package 10b of another modification according to an embodiment of the present invention is such that a conductor wiring pattern 16a on the lower surface side is formed based on a resin film 11 with Cu foil.
[0015]
Next, a method for manufacturing the high heat dissipation plastic package 10 according to one embodiment of the present invention will be described with reference to FIGS.
As shown in FIG. 3 (A), a resin film 11 with Cu foil for bonding to the heat radiating plate 12 to produce the high heat radiating plastic package 10 is made of glass cloth on a Cu foil 20 having a thickness of about 10 to 20 μm. A thermosetting B-stage adhesive resin 13 that does not include a base material is applied to about 50 to 100 μm by a doctor blade method, a roll coater method, or the like to form a film. In addition, if the Cu foil is heat-treated in a reducing atmosphere in advance, a stable peeling strength can be obtained after bonding the adhesive resin 13.
[0016]
Next, as shown in FIG. 3 (B), a cutout 15 for a cavity portion 14 (see FIG. 3 (E)) for mounting a semiconductor element is punched in the resin film 11 with Cu foil. It is provided by drilling. Since the resin film 11 with Cu foil is a joined body of the Cu foil 20 and the adhesive resin 13, the resin does not contain glass cloth or the like, and the joined body itself is thin. The notch 15 can be formed efficiently and accurately at low cost by punching a processing machine.
[0017]
Next, as shown in FIG. 3C, the surface of the heat radiating plate 12 made of a metal member having high thermal conductivity such as Cu or Cu alloy is roughened by honing or black oxide. It is carried out. This surface roughening 21 can improve the bonding strength when bonded to the adhesive resin 13.
[0018]
Next, as shown in FIG. 3D, the resin film 11 with Cu foil and the heat radiating plate 12 directly contact the heat radiating plate 12 with the bonding resin 13 side of the resin film 11 with Cu foil, and a vacuum press or the like. Is used for thermocompression bonding. When thermocompression bonding is performed using a vacuum press machine, for example, the degree of vacuum is set to 50 mmHg or less, and heating and pressurization are maintained for 40 minutes or more in a temperature of 170 to 190 ° C., a pressure of 2 to 3 MPa, and a temperature of 175 ° C. or more. The adhesive resin 13 is cured and bonded.
[0019]
Next, as shown in FIG. 3 (E), after Cu plating (not shown) made of electroless Cu plating and electric field Cu plating is performed on the Cu foil 20 of the resin film 11 with Cu foil, The conductor wiring pattern 16 is formed by normal semi-additive, subtractive, or the like. Furthermore, a solder resist film 17 is formed on the surface on which the conductor wiring pattern 16 is formed in order to expose a necessary portion of the conductor wiring pattern 16 from the opening, whereby the high heat dissipation plastic package 10 is manufactured. .
[0020]
Next, a manufacturing method of the high heat radiation type plastic package 10a of the modification according to the embodiment of the present invention will be described with reference to FIGS. 4 (A) to (E).
As shown in FIG. 4A, the resin film 11 with Cu foil for producing the high heat dissipation type plastic package 10a is coated with the adhesive resin 13 on the Cu foil 20 as in the case of the high heat dissipation type plastic package 10. Thus, the film is produced, and the notch 15 is formed by a punching press.
[0021]
Next, as shown in FIG. 4B, on the heat sink 12a made of a metal member having a high thermal conductivity such as Cu or Cu alloy, the conductor wiring patterns 16, 16a ( A through-hole 18 for the through-hole 19 is formed by using a drill machine or the like for establishing electrical conduction between them (see FIG. 4E). Further, the surface of the heat radiating plate 12a is roughened 21 by honing, black oxide or the like. And the prepreg 22 and Cu foil 20a for forming the conductor wiring pattern 16a of the lower surface side are prepared in the lower surface side of the heat sink 12a.
[0022]
Next, as shown in FIG. 4C, the adhesive resin 13 of the Cu foil-attached resin film 11 in which the notch 15 is formed is brought into direct contact with the surface on the upper surface side of the heat radiating plate 12a. The Cu foil 20a is brought into contact with the lower surface of the plate 12a via the prepreg 22 and is pressurized while being heated using a vacuum press or the like in the same manner as in the case of the high heat radiation type plastic package 10, so that the whole is done at once. Bonded and bonded together. By this bonding, the through holes 18 of the heat radiating plate 12a are filled with the adhesive resin 13 and the prepreg 22.
[0023]
Next, as shown in FIG. 4D, a through-hole having a diameter smaller than the diameter of the through-hole 18 so that the wall surface of the through-hole 18 filled with the adhesive resin 13 or the prepreg 22 is covered with the resin. A hole 23 for the hole 19 is formed by a drill machine or the like. Then, Cu foil 20 and Cu plating film 24 on the upper surface side, and Cu on the lower surface side are passed through through holes 19 in which electroless Cu plating and electric field Cu plating are applied to form a Cu plating film 24 on the wall surface of hole 23. The foil 20a and the Cu plating film 24 are electrically connected.
[0024]
Next, as shown in FIG. 4E, as in the case of the high heat dissipation plastic package 10, the Cu foil 20 and the Cu plating film 24 on the upper surface side, and the Cu foil 20a and the Cu plating film 24 on the lower surface side are formed. Conductor wiring patterns 16 and 16a are formed on both sides by a normal semi-additive method, a subtractive method, or the like. Furthermore, solder resist films 17 and 17a are formed on the surface on which the conductor wiring patterns 16 and 16a are formed in order to expose the necessary portions of the conductor wiring patterns 16 and 16a from the openings, so that a high heat dissipation type plastic package is formed. 10a is produced. It should be noted that a thermal via (not shown) that is connected to the heat sink 12a and exposed from the opening of the solder resist film 17a is provided below the cavity portion 14 where the semiconductor element is mounted, thereby generating heat from the semiconductor element. The effect of radiating heat can be further improved.
[0025]
Next, with reference to FIGS. 5A to 5C, a method of manufacturing a high heat dissipation plastic package 10b of another modification according to an embodiment of the present invention will be described.
As shown in FIG. 5 (A), the first heat-dissipating plastic package 10b for producing the high heat dissipation plastic package 10b and the heat dissipation plate made of a metal member having a high thermal conductivity such as Cu or Cu alloy. 12a is produced similarly to the resin film 11 with Cu foil and the heat radiating plate 12a in the case of the high heat radiation type plastic package 10a. A second Cu foil-attached resin film 11b similar to the first Cu foil-attached resin film 11a for forming the lower-surface-side conductor wiring pattern 16a is prepared on the lower surface side of the heat sink 12a.
[0026]
Next, as shown in FIG. 5 (B), when the adhesive resin 13 of the first Cu foil-attached resin film 11a in which the notch 15 is formed is brought into direct contact with the upper surface of the heat sink 12a. At the same time, the adhesive resin 13 of the second Cu foil-attached resin film 11b is directly brought into contact with the lower surface of the heat radiating plate 12a and heated using a vacuum press or the like as in the case of the high heat radiating plastic package 10a. While pressing, the whole is joined and bonded together. By this bonding, the through hole 18 of the heat radiating plate 12a is filled with the adhesive resin 13 from above and below.
[0027]
Next, as shown in FIG. 5C, the wall surface of the through hole 18 filled with the adhesive resin 13 is covered with the resin so that the through hole 18 is the same as in the case of the high heat dissipation plastic package 10a. A hole 23 for the through-hole 19 having a diameter smaller than the diameter of the through hole 19 is formed by a drill machine or the like. Then, Cu foil 20 and Cu plating film 24 on the upper surface side, and Cu on the lower surface side are passed through through holes 19 in which electroless Cu plating and electric field Cu plating are applied to form a Cu plating film 24 on the wall surface of hole 23. The foil 20a and the Cu plating film 24 are electrically connected. Further, conductor wiring patterns 16 and 16a are formed on both surfaces of the upper surface Cu foil 20 and Cu plating film 24, and the lower surface Cu foil 20a and Cu plating film 24, and the conductor wiring patterns 16 and 16a are formed. Solder resist films 17 and 17a that expose necessary portions of the conductor wiring patterns 16 and 16a from the openings are formed on the surface, so that the high heat dissipation plastic package 10b is manufactured. As in the case of the high heat radiation type plastic package 10a, by providing a thermal via (not shown) under the cavity 14 where the semiconductor element is mounted, the effect of radiating heat generated from the semiconductor element is further improved. Can be improved.
[0028]
【The invention's effect】
The method of manufacturing a high heat dissipation plastic package according to claim 1 is a method of manufacturing a high heat dissipation plastic package formed by joining a resin film with a Cu foil and a heat sink, wherein the resin film with a Cu foil is a Cu foil. A step of punching a notch for a cavity part for mounting a semiconductor element on a resin film with a Cu foil and punching it by press working, and a heat dissipation plate having a through hole for a through hole The resin part for adhesion of the resin film with Cu foil formed with a metal member and having a notch formed on one surface of the metal member is in direct contact with the other surface of the metal member and at the same time Cu via a prepreg since having be bonded process to abut the foil thermocompression bonding, cutouts can be easily formed without using a router machine, Cu foil resin film The heat radiating plate easily without adhesive, precisely, be joined at a time, it can provide a method of manufacturing a small thickness inexpensive high heat dissipation plastic package. Furthermore, the semiconductor elements on the heat radiating plate of the cavity can be implemented, the heat generated from the semiconductor element can efficiently radiated, on the back surface side of the radiator plate can provide a method for producing a high heat dissipation plastic package that having a wiring pattern .
[0032]
The method of manufacturing a high heat dissipation plastic package according to claim 2 is a method of manufacturing a high heat dissipation plastic package formed by joining a resin film with a Cu foil and a heat dissipation plate, and the resin film with a Cu foil is a Cu foil. It consists of a first and second resin film with Cu foil formed by bonding an adhesive resin, and punches a notch for a cavity for mounting a semiconductor element on the first Cu foil resin film And a resin part for bonding of the first Cu foil-attached resin film in which the heat sink is made of a metal member having a through hole for a through hole, and has a notch formed on one surface of the metal member Since there is a step of directly abutting and adhering the adhesive resin portion of the second Cu foil-attached resin film to the other surface of the metal member, and bonding by thermocompression bonding. The notch can be easily formed without using a router machine, and the Cu foil resin film and heat sink can be easily and accurately joined at once without an adhesive. A manufacturing method can be provided. In addition, a semiconductor element can be mounted on the heat sink of the cavity portion, heat generated from the semiconductor element can be efficiently radiated, and a method of manufacturing a high heat dissipation type plastic package having a wiring pattern on the back side of the heat sink can be provided.
[Brief description of the drawings]
FIGS. 1A and 1B are a perspective view and a longitudinal sectional view, respectively, of a high heat dissipation plastic package according to an embodiment of the present invention.
FIGS. 2A to 2C are a top side perspective view, a bottom side perspective view, and a longitudinal sectional view, respectively, of a high heat radiation type plastic package of a modification according to an embodiment of the present invention and another modification. is there.
FIGS. 3A to 3E are explanatory views of a method for manufacturing a high heat dissipation plastic package according to an embodiment of the present invention.
FIGS. 4A to 4E are explanatory views of a method for manufacturing a high heat radiation type plastic package of a modification according to one embodiment of the present invention.
FIGS. 5A to 5C are explanatory views of a manufacturing method of a high heat dissipation plastic package of another modification according to the embodiment of the present invention.
6A to 6D are explanatory views of a conventional method for manufacturing a high heat dissipation plastic package.
[Explanation of symbols]
10, 10a, 10b: High heat dissipation plastic package, 11: Resin film with Cu foil, 11a: Resin film with first Cu foil, 11b: Resin film with second Cu foil, 12, 12a: Heat dissipation plate, 13 : Adhesive resin, 14: Cavity, 15: Notch, 16, 16a: Conductor wiring pattern, 17, 17a: Solder resist film, 18: Through hole, 19: Through hole, 20, 20a: Cu foil, 21: Surface roughening, 22: prepreg, 23: hole, 24: Cu plating film

Claims

A method of manufacturing a high heat radiation type plastic package formed by joining a resin film with a Cu foil and a heat sink,
A step of punching a notch for a cavity portion for mounting a semiconductor element in the resin film with Cu foil by punching and forming a notch for forming a semiconductor element on the Cu foil; ,
When the heat dissipation plate is made of a metal member having a through hole for a through hole, and directly contacting the adhesive resin portion of the resin film with Cu foil formed with one surface of the metal member and the notch At the same time, a process of filling the adhesive resin and the prepreg into the through hole for the through hole by abutting and bonding the Cu foil to the other surface of the metal member via a prepreg, heat-pressing and bonding,
After the bonding step, a through hole is drilled so that the wall surface of the through hole for the through hole of the heat sink made of the metal member is covered with resin, and one surface of the heat sink is formed. A step of bringing the Cu foil of the resin film with Cu foil bonded to the copper foil and a Cu foil bonded to the other surface via a prepreg into a conductive state, a step of forming a conductor wiring pattern on the resin film with Cu foil, and the above A method for producing a high heat dissipation plastic package, comprising a step of forming a conductor wiring pattern on a Cu foil via a prepreg.

A method of manufacturing a high heat dissipation plastic package formed by bonding a resin film with a Cu foil and a heat sink,
The resin film with Cu foil comprises first and second resin films with Cu foil formed by bonding an adhesive resin to Cu foil, and a semiconductor element is mounted on the first resin film with Cu foil. A step of punching a notch for the cavity part of the punching press process,
The heat radiating plate is made of a metal member having a through hole for a through hole, and the adhesive resin portion of the first Cu foil-fitted resin film in which one surface of the metal member and the notch are formed is directly At the same time, the adhesive resin portion of the second Cu foil-attached resin film is directly brought into contact with the other surface of the metal member and bonded by thermocompression bonding. Filling the adhesive resin and the prepreg;
After the bonding step, through holes are formed so that the wall surface of the through hole for the through hole of the heat sink made of the metal member is covered with resin, and the upper and lower surfaces of the heat sink are formed. A method of manufacturing a high heat dissipation plastic package, comprising: a step of bringing a Cu foil into a conductive state; and a step of forming a conductor wiring pattern on the first and second resin films with Cu foil.