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JP4037057B2 - 再書込み可能な光学情報媒体 - Google Patents

再書込み可能な光学情報媒体 Download PDF

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Publication number
JP4037057B2
JP4037057B2 JP2000548873A JP2000548873A JP4037057B2 JP 4037057 B2 JP4037057 B2 JP 4037057B2 JP 2000548873 A JP2000548873 A JP 2000548873A JP 2000548873 A JP2000548873 A JP 2000548873A JP 4037057 B2 JP4037057 B2 JP 4037057B2
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JP
Japan
Prior art keywords
layer
recording
optical information
information medium
stack
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Expired - Lifetime
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JP2000548873A
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JP2002515623A (ja
Inventor
アー ヴィレンガ，ハーム
セー エン レイペルス，ヨハネス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
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Koninklijke Philips NV
Koninklijke Philips Electronics NV
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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Description

【０００１】
本発明は、レーザ光ビームにより再書込み可能な二重層記録用の光学情報媒体に関し、前記媒体は基板の同じ側に、相変化タイプの記録層の２つの記録積層を配した基板を有する。
【０００２】
相変化原理に基づく光学情報又はデータ保存は、直接重ね書き（direct overwrite）と高密度保存の可能性と読取りのみのシステムとの容易な互換性との結合のため、魅力的である。相変化光学記録には、集束レーザ光ビームを利用した薄層結晶性フィルムへのサブマイクロメータサイズのアモルファス記録マークの形成がある。情報記録中には、媒体は、被記録情報に応じて変調される集束レーザ光ビームに対して移動する。このため、相変化記録層にはクエンチングが起こり、アモルファス情報ビットが記録層の露光領域に形成され、未露光領域は結晶性を有したままである。書込んだアモルファスマークの消去は、同じレーザでの加熱により結晶化により実現される。アモルファスマークはデータビットを表わし、そのデータビットは低パワーの集束レーザ光ビームにより基板を経由して再生される。結晶性記録層に対するアモルファスマークの反射の差異が、光検出器により変調レーザ光ビームを、記録されたデジタル情報に応じて変調された光電流へその後変換される。
【０００３】
光学記録の目的の一つは、片面ディスクのＤＶＤ-再書込みやＤＶＲ（デジタルビデオレコーダ）のような媒体の保存容量を増加させることを目的とする。このことは、レーザ波長（ＬＷ）を短波長にし、及び/又は開口数（ＮＡ）を増加させることにより達成される。なぜならば、レーザスポットは（ＬＷ/ＮＡ）２に比例するからである。別の選択としては、多重記録層がある。光学ディスクの同じ面での２つの記録層を利用することであり、これは二重または二層記録層と呼ばれる。
【０００４】
単一記録層を有する相変化タイプの光学情報媒体は、本出願人により出願された国際特許出願第ＷＯ９７/５００８４（ＰＨＮ １５８８１）号に開示されている。相変化タイプの周知の媒体は、例えば（Ｚｎ）８０（ＳｉＯ２）２０のような第一の誘電体層と、ＧｅＳｂＴｅ化合物の相変化記録層と、第二の誘電体層と、反射金属ミラー層とからなる層の積層を有する基板からなる。かかる積層はＩＰＩＭ構造といわれ、ここでＭは反射、つまりミラー層を表わし、Ｉは誘電体層を表わし、Ｐは相変化記録層を表わす。金属層は反射層としてだけでなく、吸熱器としても働き、書込み中のアモルファス相のクエンチングの急速冷却を確実にする。周知の記録媒体は良好な繰り返し特性を有し、つまり書込み及び消去の回数がかなりの数、可能であり、高速度記録に適し、何回繰り返した後でさえもジッタが少ない。前記特許出願では、二重記録層は開示していない。
【０００５】
二重記録層では、第一、つまり上部記録積層は、第二の、つまり下部記録積層の適切な読取り/書込み特性を保証するために、十分に透過性を有していなければならない。しかしながら、再書込み可能な相変化記録の周知のＩＰＩＭ構造は、結晶領域での約８０％の吸収と結晶領域での約２０％の反射を示し、よって限られたレーザパワーで相変化記録層での高温度上昇と、高変調及び正確なトラッキングを保証する。ＩＰＩＭ構造は透過性ではないので、ゼロ透過が好ましい場合には、第一の、つまり上部記録積層として適していないが、第二、つまり下部記録積層に対しては適切な構造である。可能な解決策としては、窒化アルミニウムのような透明な熱伝導体により、ミラー層Ｍの置換がある。しかしながら、フィルム中での上記材料の熱伝導性は低すぎて、したがって、記録層での温度を急速に下げる能力としては不十分である。
【０００６】
本発明は上述の点に鑑みてなされたものであり、本発明の目的は、とりわけ、ＩＰＩＭ構造のある記録積層を有する片面再書込み可能な二重層の光学情報媒体を提供し、保存容量は単一層の情報媒体に関して二倍となる。
【０００７】
上記の目的は、冒頭で説明したように、
‐ ２つの誘電体層間にサンドイッチされた相変化タイプの記録層と、透明金属層と、レーザ光ビームが入射する側とは反対側に更なる誘電体層とからなる第一の記録積層と、
‐ レーザ光ビームの焦点深度より大きい厚さを有する透明スペーサー層と、
‐ ２つの誘電体層間にサンドイッチされた相変化タイプの記録層と、レーザ光ビームが入射する側とは反対側の金属ミラー層からなる第二の記録積層とが、この順番に基板の同じ側に配した基板からなる光学情報媒体により達成される。
【０００８】
本発明による光学情報媒体は以下の構造を有する：
基板/ＩＰＩＭＩ+/Ｓ/ＩＰＩＭ
であり、ここでＩＰＩＭＩ+積層は更なる誘電体層Ｉ+のある第一の記録積層であり、Ｓは透明なスペーサー層であり、ＩＰＩＭは第二の記録積層であり、Ｉ、Ｐ及びＭは前述した定義の通りである。レーザ光ビームは基板を経由して入射する。
【０００９】
本発明は、金属層Ｍが薄層金属フィルムにより置換される場合に、ＩＰＩＭ積層の透過率が増大することに基づいており、薄層金属フィルムは更なる誘電体層と組合わせてレーザ光ビームに対して透明である。たとえば、１０ｎｍの薄いＡｇ層のある記録積層の透過率は、アモルファス相と結晶性相との間の光学的コントラストに悪影響を与えることなく、更なる誘電体層の付加により約５０％だけ増大した。上記理由のため、第二の記録積層での書込み用のレーザパワーは約５０％だけ減少させることが可能である。
【００１０】
第一の記録積層の金属層は薄く、つまり１０から３０ｎｍの間の厚さである。この厚さは書込み中にアモルファス相をクエンチングさせるのに十分な厚さであり、第二の記録積層の的確な読取り/書込み特性を保証するのに十分な透過率を可能にする。金属はアルミニウム、銅又は金から選ばれるが、高い透過率と良好な熱導電性の理由から、銀から作られることが好ましい。
【００１１】
誘電体層はＺｎＳとＳｉＯ２の混合物、例えば（ＺｎＳ）８０（ＳｉＯ２）２０からなることが好ましい。更に、上記層はＳｉＯ２、Ｔａ２Ｏ５、ＴｉＯ２、ＺｎＳ、Ｓｉ３Ｎ４、ＡｌＮ、Ａｌ２Ｏ３、ＭｇＯ、ＺｎＯ、ＳｉＣと、それらの非化学量論的組成物を含んだものからなる。特に、最後の６つの材料は、良好な熱導電性のために、より好ましい。
【００１２】
第二の記録積層の金属ミラー層では、アルミニウム、チタン、金、ニッケル、銅、銀、ロジウム、白金、パラジウム、ニッケル、コバルト、マンガン及びクロム、更に上記金属の合金のような金属が利用可能である。適当な合金の例には、ＡｌＴｉ、ＡｌＣｒやＡｌＴａがある。上記金属ミラー層の厚さは重要ではないが、最大の反射を得られるように透過がゼロであることが好ましい。実用的な理由により、厚さは約１００ｎｍである。
【００１３】
記録層は相変化材料からなり、その材料は結晶性‐アモルファス相転移を示す。周知の材料には、例えばＩｎ‐Ｓｅ、Ｉｎ‐Ｓｅ‐Ｓｂ、Ｉｎ‐Ｓｂ‐Ｔｅ、Ｔｅ‐Ｇｅ、Ｔｅ‐Ｓｅ‐Ｓｂ、Ｔｅ‐Ｇｅ‐Ｓｅ又はＡｇ‐Ｉｎ‐Ｓｂ‐Ｔｅの合金がある。好ましくは、記録層はＧｅＳｂＴｅ化合物からなる。特に有用な化合物は、前述の国際特許出願第ＷＯ９７/５００８４号に開示されている。上記化合物は以下の式で示される原子割合で定義される組成物を有する：
Ｇｅ５０ｘＳｂ４０―４０ｘＴｅ６０−１０ｘ
であり、ここで０．１６６・ｘ・０．４４４である。上記組成物は三角形Ｇｅ‐Ｓｂ‐Ｔｅ組成線図でのＧｅＴｅとＳｂ２Ｔｅ３化合物に接するラインに位置しており、化学量論的化合物Ｇｅ２Ｓｂ２Ｔｅ５（ｘ＝０．４４５）、ＧｅＳｂ２Ｔｅ４（ｘ＝０．２８６）とＧｅＳｂ４Ｔｅ７（ｘ＝０．１６６）を含む。上記化合物は速い結晶化（消去）時間を示す。
【００１４】
好ましくは、第一の記録積層の記録層は、５から１５ｎｍの間の厚さを有する。厚い層ほど透過率が小さすぎるという結果になる。第二の記録積層の記録層は、例えば５から３５ｎｍの間の厚さである。
【００１５】
第一の記録積層では、基板と相変化記録層との間の誘電体層は、記録層を湿気から保護し、基板を熱損傷から保護し、光学的コントラストを最適化させる。ジッタの観点から、上記誘電体層の厚さは少なくとも７０ｎｍであることが好ましい。光学的コントラストを考慮すれば、上記層の厚さは（７０+・/２ｎ）までに制限され、ここで・はレーザ光ビームの波長であり、ｎは誘電体層の屈折率である。第二の記録積層では、スペーサー層と記録層との間の誘電体層は同じ理由で、同じ範囲内の厚さである。
【００１６】
両記録積層では、記録層と金属（ミラー）層との間の誘電体層は１０ｎｍから５０ｎｍ、好ましくは２０から４０ｎｍの間の厚さである。上記層が薄すぎると、記録層と金属ミラー層との間の熱絶縁に悪影響を及ぼす。結果として、記録層の冷却速度が増大し、好ましくない結晶化工程及び好ましくは繰り返し特性が招来する。冷却速度は第二の誘電体層の厚さを厚くすることにより減少する。
【００１７】
第一の記録積層の更なる誘電体層は最大透過のために最適化され、誘電体材料の屈折率ｎに依存し、例えばｎ＝２のとき、厚さは約６０ｎｍであり、ｎ＝３であるとき、厚さは３２ｎｍである。
【００１８】
第一と第二の記録積層との間の透明スペーサー層は、レーザ光ビームの焦点深度、例えば１０・ｍより大きな厚さを有する。上記厚さは、第一及び第二の記録積層は光学的に結合していない、つまり第一の記録積層（の記録層）に集束されるレーザ光ビームは第二の記録積層から/へ情報を読取り/書込みができず、その逆も同じである。このようにして、保存容量は単一層の情報媒体に関して二倍となる。スペーサ層の材料は、例えば紫外線硬化型アクリレート接着剤であり、サーボトラックは反復工程により設けられる。
【００１９】
情報媒体の基板は少なくともレーザ波長に対して透明であり、例えばポリカーボネート、ポリメチルメタクリレート（ＰＭＭＡ）、アモルファスポリオレフィン又はガラスから作られる。典型的な例では、基板はディスク型であり、直径１２０ｍｍで、０．６又は１．２ｍｍの厚さである。レーザ光ビームは基板の入口面を経由して積層に入射する。
【００２０】
記録層のあるディスク型基板の表面は、任意に走査可能なサーボトラックを備えていることが好ましい。このサーボトラックは、しばしばスパイラル形の溝で構成され、射出成形又は成形中に、鋳型により基板に形成される。あるいは、上記溝は、スペーサー層、例えば紫外線硬化型アクリレートの合成樹脂での反復工程で形成される。
【００２１】
選択的には、積層の最外層は保護層、例えば紫外線硬化型ポリ（メタ）アクリレートにより周りの環境から保護される。
【００２２】
記録及び消去は短波長レーザ、例えば６６０ｎｍ又はそれ以下の波長（赤又は青）を利用して実施される。
【００２３】
金属ミラー層と誘電体層の双方は、真空蒸着若しくはスパッタリングにより設けられる。
【００２４】
相変化記録層は、真空蒸着、電子ビーム真空蒸着、化学蒸着、イオンめっき又はスッパタリングにより基板に塗布される。
【００２５】
本発明は添付図面を参照して、典型的実施態様により詳細に説明され、図は本発明による光学的二重層の情報媒体の略断面図を示す。
【００２６】
典型的実施態様
図は、本発明による二重層の光学情報ディスクの断面図の一部を模式的に示す。大きさは比例していない。参照番号１は、直径１２０ｍｍ、厚さ０．６ｍｍであるポリカーボネートのディスク型基板を表わす。基板１には、
‐ 厚さ１９０ｎｍの（ＺｎＳ）８０（ＳｉＯ２）２０の誘電体層３と、
‐ 厚さ６ｎｍのＧｅＳｂ２Ｔｅ４化合物の記録層４と、
‐ 厚さ１５ｎｍの（ＺｎＳ）８０（ＳｉＯ２）２０の誘電体層５と、
‐ 厚さ１５ｎｍの透明な銀層６と、
‐ ＡｌＮの更なる誘電体層７とからなるＩＰＩＭＩ+構造を有する第一の記録積層２と、厚さ５０μｍの紫外線硬化型アクリレートのスペーサー層８と、
‐ 厚さ１９０ｎｍの（ＺｎＳ）８０（ＳｉＯ２）２０の誘電体層１０と、
‐ 厚さ２５ｎｍのＧｅＳｂ２Ｔｅ４化合物の記録層１１と、
‐ 厚さ１５ｎｍの（ＺｎＳ）８０（ＳｉＯ２）２０の誘電体層１２と、
‐ 厚さ１００ｎｍのアルミニウムミラー層１３とからなるＩＰＩＭ構造を有する第二の記録積層９が設けられている。
【００２７】
記録層４及び１１の初期の結晶状態は、付着させたアモルファス合金をレコーダ内の集束レーザビームで加熱させて得られる。
【００２８】
情報の記録、再生及び消去のレーザ光ビーム１４は基板１を経由して記録積層２に集束され、積層２に照射される。レーザ光ビーム１５は第二の記録積層９の記録層１１に集束される。
【００２９】
第一の記録積層はアモルファス状態で約５０％の透過率を有し、結晶状態では約３３％の透過率を有する。積層は良好な記録特性を有する。ジッタは４０００回の重ね書きサイクルまでで、１３％以下であった。
【００３０】
本発明によれば、再書込み可能な片面に二重層のある相変化型の光学情報媒体を提供し、ＤＶＤ‐ＲＡＭ又はＤＶＲのような保存容量は、単一層の記録媒体に対して二倍となる。
【図面の簡単な説明】
【図１】 本発明による二重層の光学情報ディスクの断面図の一部を模式的に示す。

Claims (6)

  1. レーザ光ビームにより再書込み可能な二重層記録用の光学情報媒体であって、
    前記媒体は、
    ‐ ２つの誘電体層間にサンドイッチされた相変化タイプの記録層と、透明金属層と、レーザ光ビームが入射する側とは反対側に更なる誘電体層とからなる第一の記録積層と、
    ‐ レーザ光ビームの焦点深度より大きい厚さを有する透明スペーサー層と、
    ‐ ２つの誘電体層間にサンドイッチされた相変化タイプの記録層と、レーザ光ビームが入射する側とは反対側の金属ミラー層とからなる第二の記録積層とがこの順番に基板の同じ側に配された基板からなる光学情報媒体。
  2. 前記第一の記録積層の金属層は１０から３０ｎｍの間の厚さを有することを特徴とする請求項１記載の光学情報媒体。
  3. 前記第一の記録積層の金属層は銀からなることを特徴とする請求項１記載の光学情報媒体。
  4. 前記スペーサー層は少なくとも１０μｍの厚さを有することを特徴とする請求項１記載の光学情報媒体。
  5. 前記記録層はＧｅＳｂＴｅ化合物からなることを特徴とする請求項１記載の光学情報媒体。
  6. 前記更なる誘電体層はＡｌ ２ Ｏ ３ 、ＳｉＣ、Ｓｉ３Ｎ４、ＭｇＯ、ＺｎＯ及びそれらの非化学的量論組成物を含むＡｌＮから成る群から選択された化合物からなることを特徴とする請求項１記載の光学情報媒体。
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KR100606866B1 (ko) 2006-08-01
US6190750B1 (en) 2001-02-20
KR20010021658A (ko) 2001-03-15
EP0996950B1 (en) 2008-10-08
TW473712B (en) 2002-01-21
DE69939678D1 (de) 2008-11-20
WO1999059143A3 (en) 2000-01-06
JP2002515623A (ja) 2002-05-28
WO1999059143A2 (en) 1999-11-18

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