JP4035453B2 - Structure, structure manufacturing method, and device using the structure - Google Patents

Description

【０１２９】
このように、アルミニウムとシリコンの全量に対するシリコン含有量を、２０ａｔｏｍｉｃ％以上７０ａｔｏｍｉｃ％以下に調整することで、アルミニウムの柱状構造体がシリコン領域内に分散した構造体が実現できる。アルミニウムとシリコンの組成を変化させることで、柱状構造体の孔径の制御が可能であり、また、直線性に優れたアルミニウム細線の作製が可能になる。なお、構造の確認には、ＳＥＭの他にもＴＥＭ（透過型電子顕微鏡）等を利用するのがよい。
【０１３０】
さらに、比較試料Ｃとして、ガラス基板上に、スパッタ法を用いて、シリコンをアルミニウムとシリコンの全量に対して５５ａｔｏｍｉｃ％含んだアルミニウムシリコン混合膜を約２００ｎｍ形成した。ターゲットには、４インチのアルミニウムターゲット上に１５ｍｍ角のシリコンチップ１３を８枚おいたものを用いた。スパッタ条件は、ＲＦ電源を用いて、Ａｒ流量：５０ｓｃｃｍ、放電圧力：０．７Ｐａ、投入電力：１ｋＷとした。また、基板温度は３５０℃とした。
【０１３１】
ＦＥ−ＳＥＭ（電界放出走査型電子顕微鏡）にて、比較試料Ｃを観察した。基板真上方向から見た試料表面には、大きなアルミニウムの塊が確認できた。また、エックス線回折測定により、シリコンが結晶化していることが確認された。つまり、柱状構造を有するアルミニウムナノ構造体を確認することができず、シリコン領域も非晶質ではなく結晶化していた。即ち、基板温度が高すぎると、より安定な状態に変化してしまうため、このようなアルミニウムナノ構造体を形成する膜成長ができていないと思われる。
【０１３２】
なお、柱状の部材が分散した構造体を得る為に、ターゲットの組成をＡｌ：Ｓｉ＝５５：４５などに設定することも好ましい形態である。
【０１３３】
（実施例２）
図４に本発明のアルミニウムシリコンナノ構造体の概略図を示す。ここでは、シリコンに周囲を囲まれたアルミニウムナノ構造体部分が円柱構造であり、その径２ｒが６ｎｍ、間隔２Ｒが９ｎｍ、長さＬが１０ｎｍであるアルミニウム量子ドットである場合について示す。なお、図４において、３１が基板で、３２がアルミニウム量子ドット、３３がシリコンである。ます、アルミニウムナノ構造部分がアルミニウム量子ドットであるアルミニウムシリコンナノ構造体の作製方法を説明する。シリコン基板上に、物理蒸着法である電子ビーム蒸着法を用いて、シリコンをアルミニウムとシリコンの全量に対して３０ａｔｏｍｉｃ％含んだアルミニウムシリコン混合膜を約１０ｎｍ形成する。ここではシリコンのるつぼとアルミニウムのるつぼの２種類のるつぼを同時に電子ビーム蒸着する。
【０１３４】
次に、このようにして得られたアルミニウムシリコン混合膜をＩＣＰ（誘導結合型プラズマ発光分析）にて、シリコンのアルミニウムとシリコンの全量に対する分量（ａｔｏｍｉｃ％）を分析した。その結果、シリコンのアルミニウムとシリコンの全量に対する分量は約３０ａｔｏｍｉｃ％であった。なお、ここでは測定の都合上、基板として、カーボン基板上に堆積したアルミニウムシリコン混合膜を用いた。
【０１３５】
ＦＥ−ＳＥＭ（電界放出走査型電子顕微鏡）にて、作製した試料を観察した。基板真上方向から見た表面の形状は図４のように、シリコンにより囲まれた円形状のアルミニウム量子ドットが二次元的に配列していた。アルミニウムナノ構造体部分（アルミニウム量子ドット）の孔径２ｒは６ｎｍであり、その平均中心間間隔２Ｒは９ｎｍであった。また、断面をＦＥ−ＳＥＭにて観察した所、高さは１０ｎｍであり、それぞれのアルミニウム量子ドットはお互いに独立していた。
【０１３６】
シリコンにより囲まれた間隔２Ｒが９ｎｍ、径２ｒが６ｎｍ、高さＬが１０ｎｍのアルミニウム量子ドットを有したアルミニウムシリコンナノ構造体を作製することができた。なお、Ｘ線回折法でこの試料を観察した所、アルミニウムは結晶質であり、シリコンは非晶質であった。
【０１３７】
（実施例３）
図３を再度利用して、第１の材料とてアルミニウムを、第２の材料としてシリコンとゲルマニウムを用いた場合について説明する。図３は、アルミニウムシリコンゲルマニウム混合体の概略図である。ここでは、シリコンゲルマニウムに周囲を囲まれたアルミニウムナノ構造体部分が円柱状構造であり、その径２ｒが７ｎｍであり、間隔２Ｒが１０ｎｍ、長さＬが２００ｎｍであるアルミニウム細線について示す。なお、図３において、２１が基板で、２２がアルミニウム量子細線（アルミニウムを含み構成される柱状構造体）、２３が非晶質シリコンゲルマニウムである。図１０に実際のＳＥＭ写真を示す。
【０１３８】
まず、アルミニウム細線の作製方法を説明する。
【０１３９】
ガラス基板２１上に、ＲＦマグネトロンスパッタリング法を用いて、シリコンとゲルマニウムの総量をアルミニウムとシリコンとゲルマニウムの全量に対して３８ａｔｏｍｉｃ％含んだアルミニウムシリコンゲルマニウム混合膜を約２００ｎｍ形成する。ターゲットには、図２に示すように、４インチのアルミニウムターゲット上に１５ｍｍ角のシリコンチップを２枚及び、ゲルマニウムチップを２枚おいたものを用いた。スパッタ条件は、ＲＦ電源を用いて、Ａｒ流量：５０ｓｃｃｍ、放電圧力：０．７Ｐａ、投入電力：３００Ｗとした。また、基板温度は室温とした。
【０１４０】
なお、ここではターゲット１２として、アルミニウムターゲット上にシリコンとゲルマニウムチップ１３を合計４枚置いたものを用いたが、シリコンとゲルマニウムチップの枚数はこれに限定されるものではなく、スパッタ条件により変化し、アルミニウムとシリコンとゲルマニウムの全量に対して、シリコンとゲルマニウムの合計組成比が約３８ａｔｏｍｉｃ％近辺になれば良い。また、ターゲットはアルミニウムターゲット上にシリコン及びゲルマニウムチップを置いたものに限定したものではなく、シリコンターゲット上にアルミニウムチップとシリコンチップを置いたものでも良いし、シリコンとゲルマニウムとアルミニウムの粉末を焼結したターゲットを用いても良い。
【０１４１】
さらに、ここではスパッタリング法としてＲＦスパッタリング法を用いたが、これに限定されるものではなく、ＥＣＲスパッタリング法、ＤＣスパッタリング法、イオンビームスパッタリング法でよい。さらに、スパッタリング条件は装置に依存しており、これに限定されるものではない。
【０１４２】
次に、このようにして得られたアルミニウムシリコンゲルマニウム混合膜をＩＣＰ（誘導結合型プラズマ発光分析）にて、シリコンとゲルマニウムとアルミニウムの全量に対する分量（ａｔｏｍｉｃ％）を分析した。その結果、シリコンとゲルマニウムの総量（合計組成比）は、アルミニウムとシリコンとゲルマニウムの全量に対して、約３８ａｔｏｍｉｃ％であった。
【０１４３】
なお、ここでは測定の都合上、基板として、カーボン基板上に堆積したアルミニウムシリコンゲルマニウム混合膜を用いた。
【０１４４】
ＦＥ−ＳＥＭ（電界放出走査型電子顕微鏡）にて、アルミニウムシリコンゲルマニウム混合膜を観察した。基板斜め真上方向から見た表面の形状は図３のように、シリコンとゲルマニウムの混合体に囲まれたほぼ円形のアルミニウムナノ柱状構造体が二次元的に配列していた。アルミニウムナノ構造体部分の画像処理より求めた孔径は７ｎｍであり、その平均中心間間隔は１０ｎｍであった。また、断面をＦＥ−ＳＥＭにて観察した所、膜の高さは２００ｎｍであり、それぞれのアルミニウムのナノ柱状構造体部分はお互いに独立していた。
【０１４５】
また、Ｘ線回折法でこの試料を観察した所、結晶性を示すシリコン及びゲルマニウムのピークは確認できず、シリコンとゲルマニウムの混合物は非晶質であった。なお、アルミニウムのピークが複数確認でき、多結晶であることが分かった。
【０１４６】
従って、シリコンとゲルマニウム混合体に周囲を囲まれた間隔２Ｒが１０ｎｍ、径２ｒが７ｎｍ、高さＬが２００ｎｍのアルミニウム細線を含んだアルミニウムシリコンゲルマニウム混合体を作製することができた。
【０１４７】
本実施例で説明したように、アルミニウムシリコンゲルマニウム混合膜をスパッタ法などの非平衡状態で物質を形成する成膜法で形成することで、基板表面上に数から数〜数十ｎｍスケールのアルミニウム量子ドットあるいはアルミニウム量子細線などのアルミニウムのナノ柱状構造体がシリコンゲルマニウム中に２次元的に形成された構造を有するアルミニウムシリコンゲルマニウム混合体を形成することが可能となる。
【０１４８】
（比較例）
また、比較試料Ｄとして、ガラス基板上に、スパッタ法を用いて、シリコンとゲルマニウムをアルミニウムとシリコンとゲルマニウムの全量に対して１５ａｔｏｍｉｃ％含んだアルミニウムシリコンゲルマニウム混合膜を約２００ｎｍ形成した。ターゲットには、４インチのアルミニウムターゲット上に１５ｍｍ角のシリコンチップ及びゲルマニウムチップを各々１枚おいたものを用いた。スパッタ条件は、ＲＦ電源を用いて、Ａｒ流量：５０ｓｃｃｍ、放電圧力：０．７Ｐａ、投入電力：３００Ｗとした。また、基板温度は室温とした。
【０１４９】
ＦＥ−ＳＥＭ（電界放出走査型電子顕微鏡）にて、比較試料Ｄを観察した。基板真上方向から見た表面の形状は、アルミニウム部分は円形状にはなっておらず、各々のアルミニウム部分は、連続的につながったような構造を形成した。即ち、アルミニウムの柱状構造体がシリコンゲルマニウム領域内に分散した微細構造体となっていなかった。さらに、その大きさ（長さ）は２０ｎｍを遥かに超えていた。また、断面をＦＥ−ＳＥＭにて観察した所、アルミニウム部分の幅は柱状にはなっておらず、数十ｎｍを超える大きな塊を形成していた。なお、このようにして得られたアルミニウムシリコンゲルマニウム混合膜をＩＣＰ（誘導結合型プラズマ発光分析）にて、シリコンとゲルマニウムのアルミニウムとシリコンとゲルマニウムの全量に対する分量（ａｔｏｍｉｃ％）を分析した。その結果、シリコンとゲルマニウムの総量は、アルミニウムとシリコンとゲルマニウムの全量（１００ａｔｏｍｉｃ％とする）に対して、約１５ａｔｏｍｉｃ％であった。
【０１５０】
さらに、比較試料Ｅとして、ガラス基板上に、スパッタ法を用いて、シリコンゲルマニウムをアルミニウムとシリコンゲルマニウムの全量に対して７５ａｔｏｍｉｃ％含んだアルミニウムシリコンゲルマニウム混合膜を約２００ｎｍ形成した。ターゲットには、４インチのアルミニウムターゲット上に１５ｍｍ角のシリコン及びゲルマニウムチップを各々５枚おいたものを用いた。スパッタ条件は、ＲＦ電源を用いて、Ａｒ流量：５０ｓｃｃｍ、放電圧力：０．７Ｐａ、投入電力：３００Ｗとした。また、基板温度は室温とした。
【０１５１】
ＦＥ−ＳＥＭ（電界放出走査型電子顕微鏡）にて、比較試料Ｅを観察した。基板真上方向から見た試料表面には、アルミニウム部分を観察することができなかった。また、断面をＦＥ−ＳＥＭにて観察しても、明確なアルミニウム部分を観察することができなかった。なお、このようにして得られたアルミニウムシリコンゲルマニウム混合膜をＩＣＰ（誘導結合型プラズマ発光分析）にて、シリコンとゲルマニウムのアルミニウムとシリコンとゲルマニウムの全量に対する分量（ａｔｏｍｉｃ％）を分析した。その結果、シリコンとゲルマニウムの総量は、アルミニウムとシリコンとゲルマニウムの全量（１００ａｔｏｍｉｃ％とする）に対しては約７５ａｔｏｍｉｃ％であった。
【０１５２】
このように、アルミニウムとシリコンとゲルマニウムの全量に対するシリコンとゲルマニウム含有量を、少なくとも２０ａｔｏｍｉｃ％以上７０ａｔｏｍｉｃ％以下に調整することで、シリコンゲルマニウム中にアルミニウムのナノ柱状構造体を形成することが可能であり、また、直線性に優れたアルミニウム細線の作製が可能になる。
【０１５３】
さらに、比較試料Ｆとして、ガラス基板上に、スパッタ法を用いて、シリコンとゲルマニウムの総量をアルミニウムとシリコンとゲルマニウムの全量に対して３８ａｔｏｍｉｃ％含んだアルミニウムシリコン混合膜を約２００ｎｍ形成した。ターゲットには、４インチのアルミニウムターゲット上に１５ｍｍ角のシリコンチップ及びゲルマニウムチップを各々２枚おいたものを用いた。スパッタ条件は、ＲＦ電源を用いて、Ａｒ流量：５０ｓｃｃｍ、放電圧力：０．７Ｐａ、投入電力：３００Ｗとした。また、基板温度は３５０℃とした。
【０１５４】
ＦＥ−ＳＥＭ（電界放出走査型電子顕微鏡）にて、比較試料Ｆを観察した。基板真上方向から見た試料表面には、円形あるいは楕円形をしたアルミニウムを確認することができなかった。つまり、アルミニウムのナノ柱状構造体を確認することができなかった。即ち、基板温度が高すぎると、より安定な状態に変化してしまうため、図１や図３に示したようなアルミニウムのナノ柱状構造体を形成する膜成長ができていないと思われる。
【０１５５】
（実施例４）
図４を再度利用して、アルミニウムシリコンゲルマニウム混合体について説明する。ここでは、シリコンゲルマニウムに周囲を囲まれたアルミニウムのナノ構造体部分が円柱構造であり、その径２ｒが６ｎｍ、間隔２Ｒが８ｎｍ、長さＬが１０ｎｍであるアルミニウム量子ドットである場合について示す。なお、図４において、３１が基板で、３２がアルミニウム量子ドット、３３が非晶質シリコンゲルマニウムである。ます、アルミニウムのナノ柱状構造部分がアルミニウム量子ドットであるアルミニウムシリコンゲルマニウム混合体の作製方法を説明する。シリコン基板上に、マグネトロンスパッタリング法を用いて、シリコンとゲルマニウムをアルミニウムとシリコンとゲルマニウムの全量に対して３３ａｔｏｍｉｃ％含んだアルミニウムシリコンゲルマニウム混合膜を約１０ｎｍ形成する。
【０１５６】
次に、このようにして得られたアルミニウムシリコンゲルマニウム混合膜をＩＣＰ（誘導結合型プラズマ発光分析）にて、シリコンとゲルマニウムのアルミニウムとシリコンとゲルマニウムの全量に対する分量（ａｔｏｍｉｃ％）を分析した。その結果、シリコンとゲルマニウムのアルミニウムとシリコンとゲルマニウムの全量に対する分量は約３３ａｔｏｍｉｃ％であった。なお、ここでは測定の都合上、基板として、カーボン基板上に堆積したアルミニウムシリコンゲルマニウム混合膜を用いた。
【０１５７】
ＦＥ−ＳＥＭ（電界放出走査型電子顕微鏡）にて、作製した試料を観察した。基板斜め真上方向から見た表面の形状は図４のように、シリコンゲルマニウムにより囲まれた円形状のアルミニウム量子ドットが二次元的に配列していた。アルミニウムナノ構造体部分（アルミニウム量子ドット）の孔径２ｒは６ｎｍであり、その平均中心間間隔２Ｒは８ｎｍであった。また、断面をＦＥ−ＳＥＭにて観察した所、高さは１０ｎｍであり、それぞれのアルミニウム量子ドットはお互いに独立していた。
【０１５８】
これによりシリコンゲルマニウムにより囲まれた間隔２Ｒが８ｎｍ、径２ｒが６ｎｍ、高さＬが１０ｎｍのアルミニウム量子ドットを有したアルミニウムシリコンゲルマニウム混合体を作製することができた。なお、Ｘ線回折法でこの試料を観察した所、アルミニウムは結晶質であり、シリコンゲルマニウムは非晶質であった。
【０１５９】
アルミニウムとシリコンとゲルマニウムの全量に対するシリコンとゲルマニウム含有量を、変化させることで、シリコンゲルマニウム中にアルミニウムのナノ柱状構造体の径及び間隔を変化させることが可能であり（典型的には、シリコンとゲルマニウムの量を少なくすると、アルミニウムのナノ柱状構造の径が大きくなる）、また、アルミニウムシリコンゲルマニウム混合体の膜厚を調節することで、アルミニウムのナノ柱状構造体の高さを変えることができる。
【０１６０】
さらに、アルミニウムシリコンゲルマニウム混合体中のゲルマニウムとシリコンの組成比を変化させることで、アルミニウムの柱状構造体の径や間隔を変化させることも可能である。
【０１６１】
【発明の効果】
以上説明したように、本発明によれば、柱状の部材がそれを取り囲む領域に分散した構造体、その製造方法、及び当該構造体を用いた装置を提供することができる。
【図面の簡単な説明】
【図１】（ａ）は本発明に係る構造体の一例を上面から見た概略図である。
（ｂ）は本発明に係る構造体の一例を側面から見た概略図である。
【図２】本発明に係る構造体の作製方法の一例を示す図である。
【図３】本発明に係る構造体の一例を示す図である。
【図４】本発明に係る構造体の一例を示す図である。
【図５】本発明に係る構造体を用いた単電子メモリの模式図である。
【図６】本発明に係るアルミニウムシリコン混合体のＦＥ−ＳＥＭ像である。
【図７】本発明に係るアルミニウムシリコン混合体のＦＥ−ＳＥＭ像である。
【図８】本発明に係るアルミニウムシリコン混合体のＦＥ−ＳＥＭ像である。
【図９】本発明に係る構造体を用いた単電子メモリの模式図である。
【図１０】本発明に係る混合体のＦＥ−ＳＥＭ像である。
【符号の説明】
１、１１ 柱状構造体
２、２３、３３ 柱状構造体を取り囲む領域
３、２１、３１、５１ 基板
１２ ターゲット
１３ シリコンチップあるいはゲルマニウムチップ
２２ 柱状構造体
３２ 柱状構造体
５２ 絶縁体
５３ アルミニウムシリコン混合体
５４ ドレイン電極
５５ ゲート絶縁物
５６ ゲート電極
５７ ソース電極[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a structure including a columnar member, a manufacturing method thereof, and a device using the structure.
[0002]
[Background]
In recent years, interest in fine structures as functional materials has increased.
[0003]
As a method for manufacturing such a fine structure, a method for directly manufacturing a fine structure by a semiconductor processing technique typified by a fine pattern formation technique such as photolithography (see, for example, Patent Document 1) can be given.
[0004]
In addition to the semiconductor processing technology described above, there is a method that utilizes a self-organization phenomenon or a self-formation phenomenon of a material. In other words, a new fine structure is to be realized based on a regularly formed regular structure.
[0005]
[Patent Document 1]
JP-A-5-55545 (page 3, FIG. 1)
[0006]
[Problems to be solved by the invention]
In this method using the self-organization phenomenon or the self-formation phenomenon, it is possible to realize a nano-order structure as well as a micro-order structure. The establishment of the provision and the manufacturing method was called for.
[0007]
Accordingly, an object of the present invention is to provide a novel structure, a manufacturing method thereof, and an apparatus using the same.
[0008]
[Means for Solving the Problems]
A structure according to the present invention is a structure including a first material and a second material (except when the second material is only Ge), and the first material is made of A columnar member including and surrounding is surrounded by a region including and including the second material, and the structure includes the second material including the first material and the second material. It is characterized by being contained at a ratio of 20 atomic% to 70 atomic% with respect to the total amount.
[0009]
Here, the first material is, for example, aluminum, and the second material is, for example, silicon or a mixture of silicon and germanium. The average diameter of the columnar members is, for example, 50 nm or less, and the distance between the centers of the columnar members adjacent to each other is, for example, 30 nm or less.
[0010]
In addition, the structure manufacturing method according to the present invention includes a step of preparing a substrate, a columnar member that is formed on the substrate in a non-equilibrium state and includes the first material, and the second material. (Excluding the case where the second material is only Ge), and forming a structure having a region surrounding the columnar member, wherein the second material is included in the structure, The structure is formed so as to be included in a ratio of 20 atomic% to 70 atomic% with respect to the total amount of the first material and the second material.
[0011]
In addition, an electronic device using the structure can be provided. For example, this can be realized by forming an insulating region or the like on the structure. Here, the electronic device is, for example, a single electron transistor or a single electron memory, and further includes an information processing apparatus including the same.
[0012]
The aluminum-silicon mixture according to the present invention is a film-like aluminum-silicon mixture having a columnar structure including aluminum and a silicon region surrounding the columnar structure, and the mixture includes Is characterized in that silicon is contained at a ratio of 20 atomic% to 70 atomic%.
[0013]
An aluminum silicon germanium mixture according to the present invention is a film-like aluminum silicon germanium mixture, and includes a columnar structure including aluminum and a silicon germanium region surrounding the columnar structure, and The mixture is characterized in that the total amount of silicon and germanium is contained in a ratio of 20 atomic% to 70 atomic%.
[0014]
Further, the structure according to the present invention is a structure having a plurality of columnar members and a region surrounding the side surfaces of the plurality of columnar members, the columnar members having a diameter of less than 20 nm, In addition, the center-to-center distance between the plurality of columnar members is 30 nm or less. The structure according to the present invention is characterized in that a columnar member including aluminum and a region surrounding the columnar member are simultaneously formed, and the columnar member has a diameter of less than 20 nm. .
[0015]
The structure (for example, aluminum silicon mixture) including the columnar member according to the present invention can be applied as various base materials, and can be applied to various quantum devices such as a single electron transistor and a single electron memory.
[0016]
The present invention will be specifically described below.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
(Embodiment 1)
A structure according to the present invention will be described with reference to FIG.
[0018]
The figure shows a state in which the columnar structure 1 is dispersed in a region 2 surrounding it, and FIGS. 1A and 1B are a top view and a cross-sectional view, respectively. 3 is a substrate.
[0019]
In the structure 100 in the figure, a columnar member 1 including a first material is surrounded by a region 2 including a second material, and the structure includes the second member 1. The material is contained in a ratio of 20 atomic% to 70 atomic% with respect to the total amount of the first material and the second material. As shown in Examples described later, as a result of investigations by the present inventors, it was possible to provide a structure in which substantially columnar members were dispersed in a matrix region surrounding the member within the above-mentioned ratio range. . Although depending on the shape of the underlying substrate on which the structure is formed, if the substrate shape is horizontal, the columnar members are arranged substantially perpendicular to the substrate.
[0020]
The above ratio is the ratio of the second material to the total amount of the first material and the second material constituting the structure, and is preferably 25 atomic% or more and 65 atomic% or less, more preferably 30 atomic% or more and 60 atomic%. % Or less. The above ratio can be obtained, for example, by quantitative analysis by inductively coupled plasma emission spectrometry.
[0021]
In addition, what is necessary is just to implement | achieve substantially columnar shape, for example, the 2nd material may be contained as a component of the member in the columnar shape, and the 1st material may be contained in the said area | region. Further, the columnar member and the surrounding region may contain impurities such as oxygen and argon.
[0022]
Here, examples of the first material include Al and Au. As the second material, Si, Ge, a mixture of Si and Ge (hereinafter, Si _x Ge _1-x (0 <x <1). ), Or C. In particular, the second material is preferably a material that can be amorphous.
[0023]
Further, the first and second materials are preferably materials having eutectic points (so-called eutectic materials) in both component phase equilibrium diagrams. In particular, the eutectic temperature is 300 ° C or higher, preferably 400 ° C or higher. A eutectoid material can also be used.
[0024]
As a preferable combination as the first material and the second material, Al is used as the first material, Si is used as the second material, or Al is used as the first material. As Si _x Ge _1-x The form using (0 <x <1) is mentioned.
[0025]
It is desirable that at least a part of the columnar member is polycrystalline, and a region surrounding the columnar member is amorphous. The planar shape of the columnar member is circular or elliptical.
[0026]
In the structure, a plurality of the columnar members are dispersed in a matrix including the second material. The diameter of the columnar member (the diameter when the planar shape is a circle) can be controlled mainly depending on the composition of the structure (that is, the ratio of the second material), but the average diameter is 0. It is from 5 nm to 50 nm, preferably from 1 nm to 20 nm, more preferably from 2 nm to 10 nm. Particularly, the diameter is preferably less than 20 nm. The diameter here is 2r in FIG. In the case of an ellipse or the like, the longest outer diameter portion may be within the above range. Here, the average diameter is a value derived, for example, from a columnar portion observed in an actual SEM photograph (in the range of about 100 nm × 100 nm) directly from the photograph or by image processing with a computer. However, the optimum diameter and the following interval may vary depending on the material and composition used or the use of the structure.
[0027]
The center-to-center distance 2R (FIG. 1B) between the plurality of columnar members is 2 nm to 30 nm, preferably 5 nm to 20 nm, and more preferably 5 nm to 15 nm. Of course, as the lower limit of the center-to-center distance, the above-mentioned 2R needs to have a minimum interval at which the columnar structures do not contact each other. As the second material (that is, the constituent material of the region surrounding the columnar member), a mixture of a plurality of elements (for example, Si _x Ge _1-x ), The center distance can be controlled by the ratio of the mixing ratio. Here, the center-to-center distance between columnar members is the center-to-center distance between columnar members adjacent to each other.
[0028]
The structure is preferably a film-like structure, and in this case, the columnar member includes the second material so as to be substantially perpendicular to the in-plane direction of the film. It will be dispersed in the matrix. Although it does not specifically limit as a film thickness of a film-like structure, It can apply in the range of 1 nm-100 micrometers. A more realistic film thickness in consideration of process time and the like is about 1 nm to 1 μm, or 1 nm to 3 μm. In particular, the columnar structure is preferably maintained even with a film thickness of 300 nm or more. The columnar member preferably has a structure that does not substantially branch in the thickness direction (length direction).
[0029]
The structure is preferably a film-like structure, and the structure may be provided on a substrate. The substrate is not particularly limited, but is an insulator or a substrate having an insulating layer on the surface, an insulating substrate such as quartz glass, tempered glass, crystallized glass, glass, silicon substrate, gallium arsenide, Alternatively, a flexible substrate (such as a polyimide resin) can be used as long as the structure can be formed over a semiconductor substrate such as indium phosphide, a metal substrate such as aluminum, or a substrate as a support member. In the case of a silicon substrate, a P-type, N-type, high-resistance substrate, low-resistance substrate, or the like can be used as appropriate.
[0030]
Note that an electronic device can be provided by further forming an insulating film or the like over the structure. Here, the electronic device is a quantum dot, a quantum wire, a quantum wire transistor, a single electron transistor, a single electron memory, or the like, and further includes an information processing device including them.
[0031]
The above-described structure (hereinafter sometimes referred to as a mixture) in the present invention can be applied as various base materials, and can be applied to various quantum devices such as single-electron transistors and single-electron memories, microelectrodes, and the like. .
[0032]
In addition, the structure (for example, aluminum silicon mixture) in the present invention can also be used as a mask for dry etching or wet etching for the purpose of processing another substrate or a film on the substrate.
[0033]
In addition, the present invention makes it possible to apply columnar structures such as quantum dots and quantum wires in various forms, and greatly expands the application range. The structure in the present invention can itself be used as a functional material.
[0034]
(Production method)
The structure can be manufactured using a method of forming a film in a non-equilibrium state. As the film forming method, a sputtering method is preferable, but a film forming method for forming a substance in any non-equilibrium state such as resistance heating vapor deposition, electron beam vapor deposition (EB vapor deposition), or ion plating method can be applied. is there. When the sputtering method is used, magnetron sputtering, RF sputtering, ECR sputtering, or DC sputtering can be used. When the sputtering method is used, the film is formed in an argon gas atmosphere at a pressure in the reactor of about 0.2 to 1 Pa, or about 0.1 to 1 Pa. At the time of sputtering, the first material and the second material may be separately prepared as target materials (for example, a target material in which aluminum and silicon are separated is used), but at a desired ratio in advance. A target material obtained by firing the first material and the second material may be used. In the structure according to the present embodiment, the columnar member and the region surrounding the side surface are formed at the same time. Note that sputtering is preferably performed in a state where plasma is not in contact with the substrate on which the film is grown.
[0035]
In addition, the structure according to the present invention can maintain a state in which the side surfaces of the columnar structure members are dispersed in a region surrounding the structure even when a film having a predetermined thickness or more is formed. That is, even when the film thickness is increased, the diameter of the columnar structure does not change greatly with respect to the film thickness direction. The predetermined film thickness is 110 nm or more, more preferably 300 nm or more.
[0036]
The structure formed on the substrate can be manufactured at a substrate temperature of 300 ° C. or lower, preferably 20 ° C. or higher and 200 ° C. or lower, more preferably 100 ° C. or higher and 150 ° C. or lower. .
[0037]
(Embodiment 2: In the case of aluminum silicon mixture)
The structure in the case where the first and second materials are aluminum and silicon, respectively, will be described with reference to FIG. 1 described in the above embodiment again.
[0038]
FIG. 1A is a schematic plan view of an aluminum silicon mixture according to the present invention. FIG. 1B is a schematic cross-sectional view when the sample is cut along the broken line AA ′ in FIG. In FIG. 1, 1 is a columnar structure containing aluminum, and 2 is a silicon region surrounding the columnar structure. In FIG. 1B, 3 is a substrate.
[0039]
In the film-like aluminum silicon mixture 100 formed on the substrate 3, the ratio of silicon to the total amount is 20 atomic% or more and 70 atomic% or less. Preferably, they are 25 atomic% or more and 65 atomic% or less, More preferably, they are 30 atomic% or more and 60 atomic% or less. If the proportion of silicon is within the above range, an aluminum silicon mixture in which the columnar structures 1 are dispersed in the silicon region 2 is obtained.
[0040]
The ratio (atomic%) is a value when the amount of silicon and aluminum in the aluminum silicon mixture film is quantitatively analyzed by, for example, inductively coupled plasma emission spectrometry.
[0041]
In the above ratio, atomic% is used as a unit. However, when wt% is used as a unit, when it is 20 atomic% or more and 70 atomic% or less, it is 20.65 wt% or more and 70.84 wt% or less (Al The atomic weight is converted to 26.982 and the atomic weight of Si is converted to 28.086).
[0042]
The aluminum silicon mixture 100 according to the present invention includes an aluminum columnar structure made of a composition containing aluminum as a main component and a silicon region portion containing silicon as a main component.
[0043]
In addition, the composition of the columnar structure portion 1 containing aluminum is mainly composed of aluminum. However, if a microstructure having a columnar structure is obtained, it contains other elements such as silicon, oxygen, and argon. May be. Note that the main component is, for example, that the ratio of aluminum in the component structure ratio of the columnar structure portion is 50 atomic% or more, and more preferably 80 atomic% or more.
[0044]
The composition of the silicon region surrounding the columnar structure is mainly composed of silicon. However, if a microstructure having a columnar structure is obtained, various elements such as aluminum, oxygen, and argon are used. You may contain. Note that the main component means, for example, that the ratio of silicon in the component composition ratio of the silicon region portion is 50 atomic% or more, and more preferably 80 atomic% or more.
[0045]
The silicon region is preferably amorphous. In addition, it is preferable that the silicon region portion is amorphous silicon from the viewpoint of insulation. This is because amorphous silicon has a higher defect density and a larger band gap than crystalline silicon, so that the electrical insulation of the base material separating the columnar structures is improved.
[0046]
The mixture used here indicates a state in which aluminum is liberated in the silicon matrix.
[0047]
(Construction)
As for the columnar structure 1 containing aluminum, the planar shape seen from the film surface is circular or elliptical. Of course, any shape may be employed as long as the columnar structures 1 are appropriately dispersed in the silicon region 2.
[0048]
The diameter of the columnar structure in the aluminum silicon mixture according to the present invention is not particularly limited, but the average diameter is 0.5 nm or more and 50 nm or less, preferably 0.5 nm or more and 20 nm or less, more preferably 0.8. It is good that it is 5 nm or more and 10 nm or less. The diameter here is 2r in FIG. In the case of an ellipse or the like, the longest outer diameter portion may be within the above range. Here, the average diameter is a value derived, for example, by image processing of an aluminum portion observed in an actual SEM photograph (a range of about 100 nm × 100 nm) with a computer.
[0049]
By the way, nanometer-sized nanostructures (generally in the range of 0.1 nm to 100 nm) have a size smaller than a certain characteristic length, so that the movement of electrons is confined so that unique electrical and optical properties can be obtained. May show chemical and chemical properties. From such a viewpoint, the nanostructure is useful as a functional material. Also in the aluminum silicon mixture according to the present invention, the diameter of the columnar structure constituting the mixture is 0.5 nm to 50 nm, particularly 0. When the thickness is 5 nm or more and 10 nm or less, various uses are possible as the nanostructure.
[0050]
The center-to-center distance 2R (FIG. 1 (b)) of the plurality of columnar structures 1 is 30 nm or less, preferably 15 nm or less. Of course, the 2R has an interval at which the columnar structures do not contact each other. In particular, both the diameter 2r and the center-to-center distance 2R are preferably within the above ranges.
[0051]
For example, the diameter of the aluminum nanostructure is 1 to 9 nm, the distance between the aluminum nanostructures is 5 to 10 nm, and the height to diameter ratio of the aluminum nanostructure is 0.1 to 100,000. And a microstructure in which the aluminum nanostructure is perpendicular to the substrate.
[0052]
Further, the shape of the columnar structure 1 viewed from the cross section of the substrate is preferably a rectangular shape as shown in FIG. 1B, but may take a shape such as a square or a trapezoid. The columnar structure includes a shape having an arbitrary aspect ratio (diameter / length). For example, the aspect ratio (diameter 2r / length L) can be 0.1 to 100,000.
[0053]
For example, the length L of the columnar structure can be applied in the range of 1 nm to 100 μm.
[0054]
In particular, consider a case where the length L is controlled in the range of 1 nm to several μm when the diameter 2r of the columnar structure is, for example, 1 to 10 nm and the center-to-center distance 2R is 5 to 15 nm. When the length L is several nanometers to several tens of nanometers (when the ratio of length to diameter is low), the columnar structure 1 becomes aluminum quantum dots, and when the length L is larger than that, it becomes aluminum quantum wires.
[0055]
Further, the aluminum-containing columnar structures 1 are separated from each other by a silicon region having silicon as a main component, as shown in FIG. That is, a plurality of columnar structures are dispersed in the silicon region.
[0056]
The aluminum-containing columnar structures 1 are preferably aligned in a specific direction. As shown in FIG.1 (b), it is good to align with the orthogonal | vertical direction especially with respect to a board | substrate.
[0057]
The substrate 3 is not particularly limited, but an aluminum silicon mixture is formed on an insulating substrate such as quartz glass, a silicon substrate, a semiconductor substrate such as gallium arsenide or indium phosphorus, or a substrate as a support member. If possible, a flexible substrate (eg, polyimide resin) can also be used. Further, a substrate in which one or more films are formed on the support substrate may be used.
[0058]
(Embodiment 3: Production method of aluminum silicon mixture)
A method for producing an aluminum silicon mixture according to the present invention will be described with reference to FIG. Here, an example using a sputtering method is shown as a method for forming a film in a non-equilibrium state. In FIG. 2, 11 is a substrate and 12 is a sputtering target. When the sputtering method is used, the ratio of aluminum and silicon can be easily changed.
[0059]
As shown in FIG. 2, an aluminum silicon mixed film is formed on a substrate by a magnetron sputtering method which is a film forming method for forming a substance in a non-equilibrium state.
[0060]
Silicon and aluminum as raw materials are achieved by arranging a silicon chip on an aluminum target substrate as shown in FIG. In FIG. 2, the silicon chip is divided into a plurality of parts. However, the present invention is not limited to this, and one silicon chip may be used as long as desired film formation is possible. However, in order to uniformly disperse a uniform aluminum-containing columnar structure in the silicon region, it is better to place it on the substrate 11.
[0061]
Alternatively, a fired aluminum silicon product obtained by firing a predetermined amount of aluminum and silicon powder can be used as a target material for film formation.
[0062]
Alternatively, a method of separately preparing an aluminum target and a silicon target and simultaneously sputtering both targets may be used.
[0063]
The amount of silicon in the film to be formed is 20 atomic% or more and 70 atomic% or less, preferably 25 atomic% or more and 65 atomic% or less, more preferably 30 atomic% or more and 60 atomic% or less with respect to the total amount of aluminum and silicon.
[0064]
The substrate temperature is 300 ° C. or lower, preferably 20 ° C. or higher and 200 ° C. or lower, more preferably 100 ° C. or higher and 150 ° C. or lower. If the amount of silicon is within such a range, an aluminum silicon mixture in which columnar structures are dispersed in the silicon region can be obtained.
[0065]
The sample temperature when the aluminum silicon mixed film is formed is 300 ° C. or lower, preferably 200 ° C. or lower. As described above, the aluminum-silicon mixed film formed by forming the material in a non-equilibrium state between aluminum and silicon at a sample temperature of 300 ° C. or lower is a co-stable state of aluminum and silicon. A crystal structure is formed, and aluminum forms a nano-columnar structure having a level of several nanometers and is separated in a self-forming manner.
[0066]
The amount of silicon in the aluminum silicon mixture can be controlled, for example, by changing the amount of silicon chips placed on the aluminum target.
[0067]
When film formation is performed in a non-equilibrium state, particularly in the case of sputtering, the pressure in the reaction apparatus when argon gas is flowed is preferably about 0.2 to 1 Pa, or 0.1 to 1 Pa. However, it is not particularly limited to this, and any pressure may be used as long as argon plasma is stably formed.
[0068]
Examples of the substrate 11 include a substrate such as an insulating substrate such as quartz glass, a semiconductor substrate such as silicon or gallium arsenide, and a substrate in which one or more layers are formed on these substrates. If there is no problem in forming the aluminum silicon nanostructure, the material, thickness, mechanical strength, etc. of the substrate are not particularly limited. Further, the shape of the substrate is not limited to a flat plate-like shape, but includes a curved surface, a surface having a certain degree of unevenness or a step, etc. It is not limited.
[0069]
A sputtering method is preferable as a film formation method for forming a substance in a non-equilibrium state, but a film formation for forming a substance in an arbitrary non-equilibrium state including resistance heating vapor deposition, electron beam vapor deposition (EB vapor deposition), and ion plating method. The law is applicable.
[0070]
As a film forming method, a simultaneous film forming process in which silicon and aluminum are simultaneously formed may be used, or a stacked film forming process in which silicon and aluminum are stacked in several atomic layers may be used.
[0071]
(Embodiment 4: Apparatus using aluminum silicon mixture)
FIG. 5 shows a schematic diagram of a single electron transistor using an aluminum silicon mixture. By using aluminum as quantum dots as shown in the figure, the current flowing between the source and the drain can be turned on and off by controlling the voltage applied to the gate electrode. Thus, the device of FIG. 5 functions as a transistor. In the figure, 51 is a substrate, 52 is an insulator (eg, silicon oxide), 53 is an aluminum silicon mixture, 54 is a drain electrode, 55 is a gate insulator (insulating film), 56 is a gate electrode, and 57 is a source electrode. is there. Of course, as long as a columnar structure can be realized, the above-described 53 can be made of various materials. In the description, the aluminum silicon mixture has been described. However, if a structure in which columnar members are dispersed can be realized, for example, silicon and germanium can be used instead of silicon.
[0072]
By applying the aluminum silicon structure in this way, it can be used as a single electron memory using a quantum effect or a single electron transistor by a similar method.
[0073]
In addition, the present invention makes it possible to apply aluminum nanostructures such as quantum dots and quantum wires in various forms, and remarkably expand the application range. The structure in the present invention can itself be used as a functional material.
[0074]
(Embodiment 5: Configuration of aluminum silicon germanium mixture)
Using FIG. 1 again, aluminum is used as the first material constituting the columnar member, and Si is used as the second material. _x Ge _1-x A case where (0 <x <1) is used will be described.
[0075]
FIG. 1A is a schematic plan view of an aluminum silicon germanium mixture according to the present invention. FIG. 1B is a schematic cross-sectional view when the sample is cut along the broken line AA ′ in FIG. In FIG. 1, 1 is a columnar structure containing aluminum, and 2 is a silicon germanium region surrounding the columnar structure. In FIG. 1B, 3 is a substrate.
[0076]
The film-like aluminum silicon germanium mixture 100 formed on the substrate 3 has a total ratio of silicon and germanium to the total amount of 20 atomic% or more and 70 atomic% or less. Preferably, they are 25 atomic% or more and 65 atomic% or less, More preferably, they are 30 atomic% or more and 60 atomic% or less. If the ratio of silicon germanium is within the above range, an aluminum silicon germanium mixture in which the columnar structures 1 are dispersed in the silicon germanium region 2 is obtained.
[0077]
The ratio (atomic%) is a value when the amount of silicon germanium and aluminum in the aluminum silicon germanium mixture film is quantitatively analyzed by, for example, inductively coupled plasma emission spectrometry.
[0078]
Note that the ratio of the total amount of silicon and germanium to the total amount of silicon, aluminum, and germanium is (Si + Ge) / (Si + Ge + Al) × when the amount of silicon is Si, the amount of germanium is Ge, and the amount of aluminum is Al. It is a value represented by 100. That is, when Si + Ge + Al is 100 atomic%, the ratio is Si + Ge.
[0079]
Further, the composition ratio of silicon and germanium in the silicon germanium region constituting the silicon germanium nanostructure of the present invention is not particularly limited, and it is sufficient that at least both silicon element and germanium element are included. . That is, when the composition ratio of silicon (Si) and germanium (Ge) is set to SixGe1-x, it is sufficient that the range is 0 <x <1. If the composition is in this range, the distance between the aluminum nanocolumnar structures can be controlled over a wider range than the control of the distance or diameter of the aluminum nanocolumnar structures that can be achieved with the aluminum silicon nanostructure or the aluminum germanium nanostructure. Is possible. In this sense, the present invention includes a method for controlling the interval and diameter between the columnar members.
[0080]
The aluminum-silicon-germanium mixture 100 according to the present invention includes an aluminum columnar structure having a composition containing aluminum as a main component and a silicon germanium region having a silicon germanium as a main component around it.
[0081]
In addition, the composition of the columnar structure portion 1 containing aluminum is mainly composed of aluminum. However, if a microstructure having a columnar structure is obtained, other elements such as silicon, germanium, oxygen, and argon are used. You may contain. Note that the main component is, for example, that the ratio of aluminum in the component structure ratio of the columnar structure portion is 50 atomic% or more, and more preferably 80 atomic% or more.
[0082]
Further, the composition of the silicon germanium region surrounding the columnar structure is mainly composed of silicon and germanium, but aluminum, as long as it surrounds the columnar microstructure containing aluminum, You may contain various elements, such as oxygen and argon. Note that the main component is, for example, that the total ratio of silicon and germanium is 50 atomic% or more, and more preferably 80 atomic% or more in the component composition ratio of the silicon germanium region.
[0083]
The silicon region portion is preferably amorphous. Moreover, it is preferable from the viewpoint of insulation that the silicon germanium region is amorphous silicon germanium. The reason is that amorphous silicon germanium has a large band gap and high electrical insulation of the base material separating the columnar structures.
[0084]
The mixture used here indicates a state in which aluminum is liberated in the silicon and germanium matrix.
[0085]
(Construction)
The columnar structure 1 containing aluminum has a circular shape or an elliptical shape when viewed from the film surface. Of course, any shape may be used as long as the columnar structures 1 are appropriately dispersed in the silicon germanium region 2.
[0086]
The diameter of the columnar structure in the aluminum silicon germanium mixture according to the present invention is not particularly limited, but the average diameter is 0.5 nm to 30 nm, preferably 0.5 nm to 20 nm, more preferably 0. It should be 5 nm or more and 15 nm or less. The lower limit may be 1 nm or 2 nm. The diameter here is 2r in FIG. In the case of an ellipse or the like, the longest outer diameter portion may be within the above range. Here, the average diameter is, for example, a long axis when an aluminum portion observed in an SEM photograph (range of about 100 nm × 100 nm) of an actual film surface is imaged by a computer and the aluminum portion is assumed to be an ellipse. Is the average length derived as
[0087]
By the way, nanometer-sized nanostructures (generally in the range of 0.1 nm to 100 nm) have a size smaller than a certain characteristic length (mean free process, etc.). May show chemical properties. From such a viewpoint, the nanostructure is useful as a functional material, and in the aluminum silicon germanium mixture according to the present invention, the diameter of the columnar structure constituting the mixture is 0.5 nm to 30 nm, particularly When the thickness is 0.5 nm or more and 15 nm or less, various uses are possible as the nanostructure.
[0088]
The center-to-center distance 2R (FIG. 1 (b)) of the plurality of columnar structures 1 is 30 nm or less, preferably 20 nm or less. Of course, the 2R has an interval at which the columnar structures do not contact each other. In particular, both the diameter 2r and the center-to-center distance 2R are preferably within the above ranges. Here, 2R can also be said to be the distance between the centers of adjacent columnar members.
[0089]
For example, the diameter of the aluminum nanostructure having a columnar structure is 1 to 15 nm, the interval between the aluminum nanostructures is 10 to 20 nm, and the ratio of the height and the diameter of the aluminum nanostructure is 0. And a fine structure in which the aluminum nanostructure is perpendicular to the substrate.
[0090]
Further, the shape of the columnar structure 1 viewed from the cross section of the substrate may be a rectangular shape as shown in FIG. 1B, or an arbitrary shape such as a square or a trapezoid. The columnar structure includes a shape having an arbitrary aspect ratio (diameter / length). For example, the aspect ratio (diameter 2r / length L) can be 0.1 to 100,000.
[0091]
For example, the length L of the columnar structure can be applied in the range of 1 nm to 100 μm.
[0092]
In particular, consider a case where the length L is controlled in the range of 1 nm to several μm when the diameter 2r of the columnar structure is, for example, 1 to 15 nm and the center-to-center distance 2R is 10 to 20 nm. When the length L is several nanometers to several tens of nanometers (when the ratio of length to diameter is low), the columnar structure 1 acts as an aluminum quantum dot (0 dimension), and when the length L is larger than that, an aluminum quantum wire (1 Dimension).
[0093]
Further, the aluminum-containing columnar structures 1 are separated from each other by a silicon germanium region mainly composed of silicon and germanium, as shown in FIG. That is, a plurality of columnar structures are dispersed in the silicon germanium region.
[0094]
The aluminum-containing columnar structures 1 are preferably aligned in a specific direction. As shown in FIG.1 (b), it is good to align with the orthogonal | vertical direction especially with respect to a board | substrate.
[0095]
The substrate 3 is not particularly limited, but an insulating substrate such as quartz glass or plastic, a silicon substrate, a germanium substrate, a semiconductor substrate such as gallium arsenide, or indium phosphorus, or aluminum on a substrate as a support member. If a silicon germanium mixture can be formed, a flexible substrate (such as a polyimide resin) can also be used. Further, a substrate in which one or more films are formed on the support substrate may be used.
[0096]
(Embodiment 6: Method for producing aluminum silicon germanium mixture)
The manufacturing method of the aluminum silicon germanium mixture according to the present invention will be described with reference to FIG. 2 again. Here, an example using a sputtering method is shown as a method for forming a film in a non-equilibrium state. In FIG. 2, 11 is a substrate and 12 is a sputtering target. When the sputtering method is used, the ratio of aluminum, silicon, and germanium can be easily changed by changing the target material. Although 13 is described as a silicon chip, in this embodiment, it is a silicon chip or a germanium chip.
[0097]
As shown in FIG. 2, an aluminum silicon germanium mixed film is formed on a substrate by a magnetron sputtering method which is a film forming method for forming a substance in a non-equilibrium state.
[0098]
Silicon, germanium and aluminum as raw materials are achieved by arranging a silicon chip and a germanium chip on an aluminum target substrate as shown in FIG. In FIG. 2, the silicon chip or the germanium chip is divided into a plurality of parts. However, the number of silicon chips or germanium chips is not limited to this and may be one as long as desired film formation is possible. However, in order to uniformly disperse a uniform aluminum-containing columnar structure in the silicon germanium region, it is better to place it on the substrate 11 as shown in FIG.
[0099]
Alternatively, a fired aluminum silicon germanium product obtained by firing a predetermined amount of aluminum, silicon, and germanium powder can be used as a film forming target material. By using such a target, it is possible to form a homogeneous film with little variation in film composition.
[0100]
Alternatively, a method of separately preparing an aluminum target, a silicon target, and a germanium target and simultaneously sputtering each target may be used.
[0101]
The total total amount of silicon and germanium in the formed film is 20 atomic% or more and 70 atomic% or less, preferably 25 atomic% or more and 65 atomic% or less, more preferably 30 atomic% or more and 60 atomic% or less with respect to the total amount of aluminum, silicon and germanium. It is as follows.
[0102]
The substrate temperature is 300 ° C. or lower, preferably 200 ° C. or lower, and preferably 100 ° C. or higher and 150 ° C. or lower. The lower limit is 0 ° C. or room temperature. If the total amount of silicon and germanium is produced within such a temperature range, an aluminum silicon germanium mixture in which columnar structures are dispersed in the silicon germanium region can be obtained.
[0103]
The sample temperature when forming the aluminum silicon germanium mixed film is 300 ° C. or lower, preferably 200 ° C. or lower. Thus, although it depends on the film forming conditions, the aluminum silicon germanium mixed film produced by forming the aluminum, silicon, and germanium in a non-equilibrium state at a sample temperature of 300 ° C. or less is formed. In this case, aluminum, silicon, and germanium form a metastable eutectic structure, and aluminum forms a nano-columnar structure having a level of several nanometers, and is separated from the silicon germanium region in a self-forming manner.
[0104]
For the total amount of silicon and germanium in the aluminum silicon germanium mixture, for example, use a target prepared by changing the amount of silicon chip or germanium chip placed on the aluminum target, or changing the amount of aluminum, silicon and germanium powder mixed Can be controlled.
[0105]
When film formation is performed in a non-equilibrium state, particularly in the case of sputtering, the pressure in the reaction apparatus when argon gas is flowed is preferably about 0.2 to 1 Pa, or 0.1 to 1 Pa. However, it is not particularly limited to this, and any pressure may be used as long as argon plasma is stably formed.
[0106]
Examples of the substrate 11 include a substrate such as an insulating substrate such as quartz glass, a semiconductor substrate such as silicon or gallium arsenide, and a substrate in which one or more layers are formed on these substrates. If there is no problem in forming the aluminum nanocolumnar structure, the material, thickness, mechanical strength, etc. of the base are not particularly limited. In addition, the shape of the substrate is not limited to a flat plate-like shape, but includes a curved surface, a surface having a certain degree of unevenness or a step, and the like. There is no particular limitation.
[0107]
The film forming method for forming the material in a non-equilibrium state is preferably a sputtering method, but the material is formed in any non-equilibrium state including a vapor deposition method (resistance heating vapor deposition, electron beam vapor deposition, etc.) and an ion plating method. A membrane method is applicable.
[0108]
As a method of film formation, a simultaneous film formation process in which silicon, germanium, and aluminum are simultaneously formed may be used, or a multilayer film formation process in which silicon, germanium, and aluminum are stacked in several atomic layers may be used. Absent.
[0109]
(Embodiment 7: Apparatus using aluminum silicon germanium mixture)
FIG. 9 shows a schematic diagram of a single-electron memory using an aluminum silicon germanium mixture.
[0110]
91 is a substrate, 92 is an insulator (for example, silicon oxide), 93 is a structure in which columnar aluminum is dispersed in a mixture of silicon and germanium (aluminum silicon germanium mixture), 94 is a drain region, 95 is a gate insulating region, 96 is a gate electrode, and 97 is a source region.
[0111]
By using aluminum as quantum dots as shown in FIG. 9, the electrical characteristics of the channel portion can be controlled by the influence of the charges accumulated in the quantum dots. In addition, since charge can be accumulated in the quantum dots for a long time, a nonvolatile memory in which information is not lost even when the power is turned off can be formed. In the description, an aluminum silicon germanium structure is used. However, if a structure in which columnar members are dispersed is obtained, another material (for example, aluminum silicon instead of aluminum silicon germanium) may be used. it can.
[0112]
By applying the aluminum silicon germanium structure in this way, it can be used as a single electron memory using a quantum effect or a single electron transistor using a similar principle.
[0113]
In addition, the present invention makes it possible to apply aluminum nano-columnar structures such as quantum dots and quantum wires in various forms, and remarkably expand the application range.
[0114]
(Example 1: first material Al, second material Si)
FIG. 3 shows a schematic view of the aluminum silicon structure of the present invention. Here, the aluminum structure part surrounded by silicon is a columnar structure, an aluminum fine wire having a diameter 2r of 3 nm, an interval 2R of 7 nm, and a length L of 200 nm is shown. In FIG. 3, 21 is a substrate, 22 is an aluminum quantum wire, and 23 is silicon. FIG. 6 shows an actual SEM photograph.
[0115]
First, a method for producing an aluminum thin wire will be described.
[0116]
On the glass substrate 21, an aluminum silicon mixed film containing silicon at 55 atomic% with respect to the total amount of aluminum and silicon is formed by using an RF magnetron sputtering method. As shown in FIG. 2, the target used was eight 15 mm square silicon chips 13 on a 4-inch aluminum target. Sputtering conditions were as follows: using an RF power source, Ar flow rate: 50 sccm, discharge pressure: 0.7 Pa, and input power: 1 kW. The substrate temperature was room temperature.
[0117]
Here, as the target 12, a silicon chip 13 placed on an aluminum target was used. However, the number of silicon chips is not limited to this, and the aluminum silicon mixed film varies depending on sputtering conditions. The composition should be about 55 atomic%. The target is not limited to a silicon chip placed on an aluminum target, and an aluminum chip placed on a silicon target may be used, or a target obtained by sintering silicon and aluminum powder may be used. .
[0118]
Next, the amount (atomic%) of silicon with respect to the total amount of aluminum and silicon was analyzed by ICP (inductively coupled plasma emission analysis) for the aluminum silicon mixed film thus obtained. As a result, the amount of silicon with respect to the total amount of aluminum and silicon was about 55 atomic%. Here, for convenience of measurement, an aluminum silicon mixed film deposited on a carbon substrate was used as the substrate.
[0119]
The aluminum silicon mixed film was observed with an FE-SEM (field emission scanning electron microscope). As shown in FIG. 3, the shape of the surface viewed from right above the substrate was a two-dimensional array of circular aluminum nanostructures surrounded by silicon. The pore diameter of the aluminum nanostructure part was 3 nm, and the average center-to-center distance was 7 nm. Moreover, when the cross section was observed with FE-SEM, the height was 200 nm and each aluminum nanostructure part was mutually independent.
[0120]
Further, when this sample was observed by an X-ray diffraction method, a silicon peak showing crystallinity could not be confirmed, and the silicon was amorphous. Note that a plurality of peaks indicating the crystallinity of aluminum were confirmed, indicating that at least a part of aluminum was polycrystalline.
[0121]
Therefore, an aluminum silicon nanostructure including an aluminum fine wire surrounded by silicon and having an interval 2R of 7 nm, a diameter 2r of 3 nm, and a height L of 200 nm could be produced.
[0122]
As described in this example, an aluminum silicon mixed film is formed by a film forming method that forms a material in a non-equilibrium state such as a sputtering method, so that aluminum quantum dots of a few nm scale are formed in a silicon matrix on the substrate surface. Alternatively, an aluminum silicon nanostructure having an aluminum nanostructure such as an aluminum quantum wire can be formed.
[0123]
(Comparative example)
Further, as a comparative sample A, an aluminum silicon mixed film containing silicon at 15 atomic% with respect to the total amount of aluminum and silicon was formed on a glass substrate by a sputtering method with a thickness of about 200 nm. The target used was two 15 mm square silicon chips 13 on a 4-inch aluminum target. Sputtering conditions were as follows: using an RF power source, Ar flow rate: 50 sccm, discharge pressure: 0.7 Pa, and input power: 1 kW. The substrate temperature was room temperature.
[0124]
Comparative sample A was observed with an FE-SEM (field emission scanning electron microscope) (see FIG. 7). The shape of the surface viewed from directly above the substrate was such that the aluminum portion was not circular, and aluminum was continuously connected. That is, the aluminum columnar structure was not a fine structure uniformly dispersed in the silicon region. Furthermore, its size was far over 10 nm. Moreover, when the cross section was observed with FE-SEM, the width | variety of the aluminum part exceeded 15 nm. The aluminum silicon mixed film thus obtained was analyzed by ICP (inductively coupled plasma emission analysis) for the amount of silicon (atomic%) relative to the total amount of aluminum and silicon. As a result, the amount of silicon relative to the total amount of aluminum and silicon was about 15 atomic%.
[0125]
Further, as a comparative sample B, an aluminum silicon mixed film containing 75 atomic% of silicon with respect to the total amount of aluminum and silicon was formed on a glass substrate by sputtering to a thickness of about 200 nm. The target used was 14 pieces of 15 mm square silicon chips 13 on a 4-inch aluminum target. Sputtering conditions were as follows: using an RF power source, Ar flow rate: 50 sccm, discharge pressure: 0.7 Pa, and input power: 1 kW. The substrate temperature was room temperature.
[0126]
Comparative sample B was observed with an FE-SEM (field emission scanning electron microscope) (see FIG. 8). An aluminum portion could not be observed on the sample surface viewed from directly above the substrate. Further, even when the cross section was observed with FE-SEM, the aluminum portion could not be clearly observed. The aluminum-silicon mixed film thus obtained was analyzed by ICP (inductively coupled plasma emission analysis) for the amount (atomic%) of silicon relative to the total amount of aluminum and silicon. As a result, the amount of silicon with respect to the total amount of aluminum and silicon was about 75 atomic%.
[0127]
Further, the sample in which the comparative sample A is manufactured and the condition of the number of silicon chips is changed, and the ratio of silicon to the total amount of the aluminum silicon mixture is 20 atomic%, 35 atomic%, 50 atomic%, 60 atomic%, and 70 atomic%. Was made. A case in which the aluminum columnar structure is a fine structure dispersed in the silicon region is indicated by ◯, and a case in which the aluminum columnar structure is not formed is indicated by ×. In terms of the uniformity of the columnar structure, the silicon ratio is preferably 30 or more and 60 atomic%. When the ratio of silicon was 65 or 70 atomic%, the crystallinity of aluminum was low, and it was close to an amorphous state.
[0128]
[Table 1]

[0129]
As described above, by adjusting the silicon content with respect to the total amount of aluminum and silicon to 20 atomic% or more and 70 atomic% or less, a structure in which the aluminum columnar structure is dispersed in the silicon region can be realized. By changing the composition of aluminum and silicon, the hole diameter of the columnar structure can be controlled, and an aluminum thin wire excellent in linearity can be produced. For confirmation of the structure, a TEM (transmission electron microscope) or the like may be used in addition to the SEM.
[0130]
Further, as a comparative sample C, an aluminum-silicon mixed film containing silicon at 55 atomic% with respect to the total amount of aluminum and silicon was formed on a glass substrate by sputtering using a sputtering method. The target used was 8 pieces of 15 mm square silicon chips 13 on a 4-inch aluminum target. Sputtering conditions were as follows: using an RF power source, Ar flow rate: 50 sccm, discharge pressure: 0.7 Pa, and input power: 1 kW. The substrate temperature was 350 ° C.
[0131]
Comparative sample C was observed with an FE-SEM (field emission scanning electron microscope). A large lump of aluminum was observed on the sample surface viewed from directly above the substrate. Further, X-ray diffraction measurement confirmed that silicon was crystallized. That is, an aluminum nanostructure having a columnar structure could not be confirmed, and the silicon region was not crystallized but crystallized. That is, if the substrate temperature is too high, the state changes to a more stable state, so that it is considered that film growth for forming such an aluminum nanostructure cannot be performed.
[0132]
In order to obtain a structure in which columnar members are dispersed, it is also preferable to set the target composition to Al: Si = 55: 45 or the like.
[0133]
(Example 2)
FIG. 4 shows a schematic view of the aluminum silicon nanostructure of the present invention. Here, a case where the aluminum nanostructure part surrounded by silicon is a columnar structure, an aluminum quantum dot having a diameter 2r of 6 nm, an interval 2R of 9 nm, and a length L of 10 nm is shown. In FIG. 4, 31 is a substrate, 32 is an aluminum quantum dot, and 33 is silicon. First, a method for producing an aluminum silicon nanostructure in which the aluminum nanostructure portion is an aluminum quantum dot will be described. An aluminum silicon mixed film containing silicon at 30 atomic% with respect to the total amount of aluminum and silicon is formed on a silicon substrate by using an electron beam evaporation method which is a physical vapor deposition method. Here, two types of crucibles, a silicon crucible and an aluminum crucible, are simultaneously deposited by electron beam.
[0134]
Next, the amount (atomic%) of silicon with respect to the total amount of aluminum and silicon was analyzed by ICP (inductively coupled plasma emission analysis) for the aluminum silicon mixed film thus obtained. As a result, the amount of silicon relative to the total amount of aluminum and silicon was about 30 atomic%. Here, for convenience of measurement, an aluminum silicon mixed film deposited on a carbon substrate was used as the substrate.
[0135]
The prepared sample was observed with an FE-SEM (field emission scanning electron microscope). As shown in FIG. 4, the shape of the surface viewed from right above the substrate was circular aluminum quantum dots surrounded by silicon arranged two-dimensionally. The pore diameter 2r of the aluminum nanostructure part (aluminum quantum dots) was 6 nm, and the average center-to-center spacing 2R was 9 nm. Moreover, when the cross section was observed with FE-SEM, the height was 10 nm and each aluminum quantum dot was mutually independent.
[0136]
An aluminum silicon nanostructure having aluminum quantum dots surrounded by silicon and having an interval 2R of 9 nm, a diameter 2r of 6 nm, and a height L of 10 nm could be produced. When this sample was observed by an X-ray diffraction method, aluminum was crystalline and silicon was amorphous.
[0137]
(Example 3)
The case where aluminum is used as the first material and silicon and germanium are used as the second material will be described with reference to FIG. 3 again. FIG. 3 is a schematic view of an aluminum silicon germanium mixture. Here, the aluminum nanostructure part surrounded by silicon germanium is a cylindrical structure, the diameter 2r is 7 nm, the interval 2R is 10 nm, and the length L is 200 nm. In FIG. 3, 21 is a substrate, 22 is an aluminum quantum wire (a columnar structure including aluminum), and 23 is amorphous silicon germanium. FIG. 10 shows an actual SEM photograph.
[0138]
First, a method for producing an aluminum thin wire will be described.
[0139]
An aluminum silicon germanium mixed film containing 38 atomic% of the total amount of silicon and germanium with respect to the total amount of aluminum, silicon, and germanium is formed on the glass substrate 21 by RF magnetron sputtering. As shown in FIG. 2, a target having two 15 mm square silicon chips and two germanium chips on a 4-inch aluminum target was used. Sputtering conditions were as follows: Ar flow rate: 50 sccm, discharge pressure: 0.7 Pa, input power: 300 W using an RF power source. The substrate temperature was room temperature.
[0140]
Here, the target 12 used was a total of four silicon and germanium chips 13 placed on an aluminum target. However, the number of silicon and germanium chips is not limited to this, and varies depending on the sputtering conditions. The total composition ratio of silicon and germanium should be about 38 atomic% with respect to the total amount of aluminum, silicon, and germanium. Also, the target is not limited to a silicon and germanium chip placed on an aluminum target, but an aluminum chip and a silicon chip placed on a silicon target may be used, and silicon, germanium and aluminum powders may be sintered. You may use the target.
[0141]
Further, although the RF sputtering method is used here as the sputtering method, the present invention is not limited to this, and an ECR sputtering method, a DC sputtering method, or an ion beam sputtering method may be used. Furthermore, the sputtering conditions depend on the apparatus, and are not limited thereto.
[0142]
Next, the amount (atomic%) of the aluminum silicon germanium mixed film thus obtained was analyzed by ICP (inductively coupled plasma emission analysis) with respect to the total amount of silicon, germanium, and aluminum. As a result, the total amount (total composition ratio) of silicon and germanium was about 38 atomic% with respect to the total amount of aluminum, silicon, and germanium.
[0143]
Here, for convenience of measurement, an aluminum silicon germanium mixed film deposited on a carbon substrate was used as the substrate.
[0144]
The aluminum silicon germanium mixed film was observed with an FE-SEM (field emission scanning electron microscope). As shown in FIG. 3, the shape of the surface viewed from diagonally above the substrate was a two-dimensional array of substantially circular aluminum nanocolumnar structures surrounded by a mixture of silicon and germanium. The pore diameter determined by image processing of the aluminum nanostructure part was 7 nm, and the average center-to-center distance was 10 nm. Moreover, when the cross section was observed with FE-SEM, the height of the film was 200 nm, and the nano-columnar structure portions of each aluminum were independent of each other.
[0145]
Further, when this sample was observed by an X-ray diffraction method, the peaks of silicon and germanium exhibiting crystallinity could not be confirmed, and the mixture of silicon and germanium was amorphous. A plurality of aluminum peaks could be confirmed, and it was found to be polycrystalline.
[0146]
Therefore, an aluminum silicon germanium mixture including an aluminum fine wire surrounded by a silicon and germanium mixture and having an interval 2R of 10 nm, a diameter 2r of 7 nm, and a height L of 200 nm could be produced.
[0147]
As described in this embodiment, an aluminum silicon germanium mixed film is formed by a film forming method that forms a material in a non-equilibrium state such as a sputtering method, so that several to several to several tens of nm scale aluminum is formed on the substrate surface. It becomes possible to form an aluminum silicon germanium mixture having a structure in which aluminum nanocolumnar structures such as quantum dots or aluminum quantum wires are two-dimensionally formed in silicon germanium.
[0148]
(Comparative example)
Further, as a comparative sample D, an aluminum silicon germanium mixed film containing 15 atomic% of silicon and germanium with respect to the total amount of aluminum, silicon, and germanium was formed on a glass substrate by a sputtering method with a thickness of about 200 nm. The target used was a 4-inch aluminum target with one 15 mm square silicon chip and one germanium chip. Sputtering conditions were as follows: Ar flow rate: 50 sccm, discharge pressure: 0.7 Pa, input power: 300 W using an RF power source. The substrate temperature was room temperature.
[0149]
Comparative sample D was observed with an FE-SEM (field emission scanning electron microscope). The shape of the surface seen from right above the substrate was such that the aluminum portions were not circular, and each aluminum portion was connected continuously. That is, the aluminum columnar structure was not a fine structure dispersed in the silicon germanium region. Further, its size (length) was far over 20 nm. Moreover, when the cross section was observed with FE-SEM, the width | variety of the aluminum part was not columnar, and the big lump exceeding several tens nm was formed. The aluminum silicon germanium mixed film thus obtained was analyzed by ICP (inductively coupled plasma emission analysis) for the amount (atomic%) of silicon and germanium with respect to the total amount of aluminum, silicon and germanium. As a result, the total amount of silicon and germanium was about 15 atomic% with respect to the total amount of aluminum, silicon and germanium (assumed to be 100 atomic%).
[0150]
Further, as a comparative sample E, an aluminum silicon germanium mixed film containing 75 atomic% of silicon germanium with respect to the total amount of aluminum and silicon germanium was formed on a glass substrate by sputtering using a sputtering method. The target used was a 4-inch aluminum target with five 15 mm square silicon and germanium chips. Sputtering conditions were as follows: Ar flow rate: 50 sccm, discharge pressure: 0.7 Pa, input power: 300 W using an RF power source. The substrate temperature was room temperature.
[0151]
Comparative sample E was observed with an FE-SEM (field emission scanning electron microscope). An aluminum portion could not be observed on the sample surface viewed from directly above the substrate. Further, even when the cross section was observed with FE-SEM, a clear aluminum portion could not be observed. The aluminum silicon germanium mixed film thus obtained was analyzed by ICP (inductively coupled plasma emission analysis) for the amount (atomic%) of silicon and germanium with respect to the total amount of aluminum, silicon and germanium. As a result, the total amount of silicon and germanium was about 75 atomic% with respect to the total amount of aluminum, silicon and germanium (assumed to be 100 atomic%).
[0152]
In this manner, by adjusting the silicon and germanium content with respect to the total amount of aluminum, silicon, and germanium to at least 20 atomic% to 70 atomic%, it is possible to form an aluminum nanocolumnar structure in silicon germanium. Also, it becomes possible to produce an aluminum thin wire having excellent linearity.
[0153]
Further, as a comparative sample F, an aluminum-silicon mixed film containing about 38 nm of the total amount of silicon and germanium with respect to the total amount of aluminum, silicon, and germanium was formed on a glass substrate by sputtering. The target used was a 4-inch aluminum target with two 15 mm square silicon chips and two germanium chips. Sputtering conditions were as follows: Ar flow rate: 50 sccm, discharge pressure: 0.7 Pa, input power: 300 W using an RF power source. The substrate temperature was 350 ° C.
[0154]
The comparative sample F was observed with an FE-SEM (field emission scanning electron microscope). On the surface of the sample viewed from directly above the substrate, circular or elliptical aluminum could not be confirmed. That is, an aluminum nanocolumnar structure could not be confirmed. That is, if the substrate temperature is too high, the state changes to a more stable state, so that it is considered that the film growth for forming the aluminum nanocolumnar structure as shown in FIGS.
[0155]
Example 4
The aluminum silicon germanium mixture will be described with reference to FIG. 4 again. Here, a case where the aluminum nanostructure portion surrounded by silicon germanium is a cylindrical structure, and is an aluminum quantum dot having a diameter 2r of 6 nm, an interval 2R of 8 nm, and a length L of 10 nm. In FIG. 4, 31 is a substrate, 32 is an aluminum quantum dot, and 33 is amorphous silicon germanium. First, a method for producing an aluminum silicon germanium mixture in which the nano-columnar structure portion of aluminum is aluminum quantum dots will be described. On the silicon substrate, an aluminum silicon germanium mixed film containing 33 atomic% of silicon and germanium with respect to the total amount of aluminum, silicon and germanium is formed by about 10 nm using a magnetron sputtering method.
[0156]
Next, the aluminum silicon germanium mixed film thus obtained was analyzed by ICP (inductively coupled plasma emission analysis) for the amount (atomic%) of silicon and germanium with respect to the total amount of aluminum, silicon and germanium. As a result, the amount of silicon and germanium with respect to the total amount of aluminum, silicon and germanium was about 33 atomic%. Here, for convenience of measurement, an aluminum silicon germanium mixed film deposited on a carbon substrate was used as the substrate.
[0157]
The prepared sample was observed with an FE-SEM (field emission scanning electron microscope). As shown in FIG. 4, the shape of the surface of the surface viewed from diagonally above the substrate was circular aluminum quantum dots surrounded by silicon germanium arranged two-dimensionally. The pore diameter 2r of the aluminum nanostructure part (aluminum quantum dots) was 6 nm, and the average center-to-center spacing 2R was 8 nm. Moreover, when the cross section was observed with FE-SEM, the height was 10 nm and each aluminum quantum dot was mutually independent.
[0158]
Thus, an aluminum silicon germanium mixture having aluminum quantum dots surrounded by silicon germanium and having an interval 2R of 8 nm, a diameter 2r of 6 nm, and a height L of 10 nm could be produced. When this sample was observed by X-ray diffraction, aluminum was crystalline and silicon germanium was amorphous.
[0159]
By changing the silicon and germanium content relative to the total amount of aluminum, silicon and germanium, it is possible to change the diameter and spacing of the aluminum nanocolumns in silicon germanium (typically silicon and germanium). When the amount of germanium is reduced, the diameter of the aluminum nanocolumnar structure increases, and the height of the aluminum nanocolumnar structure can be changed by adjusting the film thickness of the aluminum silicon germanium mixture.
[0160]
Furthermore, by changing the composition ratio of germanium and silicon in the aluminum silicon germanium mixture, the diameter and interval of the aluminum columnar structures can be changed.
[0161]
【The invention's effect】
As described above, according to the present invention, it is possible to provide a structure in which columnar members are dispersed in a region surrounding the columnar member, a manufacturing method thereof, and an apparatus using the structure.
[Brief description of the drawings]
FIG. 1A is a schematic view of an example of a structure according to the present invention as viewed from above.
(B) is the schematic which looked at an example of the structure concerning the present invention from the side.
FIG. 2 is a diagram showing an example of a method for manufacturing a structure according to the present invention.
FIG. 3 is a diagram showing an example of a structure according to the present invention.
FIG. 4 is a diagram showing an example of a structure according to the present invention.
FIG. 5 is a schematic diagram of a single electron memory using a structure according to the present invention.
FIG. 6 is an FE-SEM image of an aluminum silicon mixture according to the present invention.
FIG. 7 is an FE-SEM image of an aluminum silicon mixture according to the present invention.
FIG. 8 is an FE-SEM image of an aluminum silicon mixture according to the present invention.
FIG. 9 is a schematic diagram of a single-electron memory using a structure according to the present invention.
FIG. 10 is an FE-SEM image of the mixture according to the present invention.
[Explanation of symbols]
1,11 Columnar structure
2, 23, 33 Areas surrounding the columnar structure
3, 21, 31, 51 substrate
12 Target
13 Silicon chip or germanium chip
22 Columnar structure
32 Columnar structure
52 Insulator
53 Aluminum silicon mixture
54 Drain electrode
55 Gate insulator
56 Gate electrode
57 Source electrode

Claims (7)

A method of manufacturing a film including a plurality of columnar structures and a region surrounding the columnar structures ,
Comprising the steps of: providing a substrate,
Wherein said columnar structure being arranged distributed on the substrate, and a step of forming by sputtering made the film and a said region surrounding the columnar structure,
The columnar structure is made of polycrystalline aluminum , the region is made of amorphous Si _x Ge _1-x (0 <x <1), and the film contains Si _x Ge _1-x at 30 atomic%. film production method of which is characterized that you form a membrane on so that contains a proportion of less than 60 atomic%. The film manufacturing method according to claim 1, wherein the film has a thickness of 300 nm or more.   The film manufacturing method according to claim 1, wherein the sputtering method is an RF magnetron sputtering method. 4. The film manufacturing method according to claim 1, wherein the sputtering method is performed in an argon gas atmosphere and a pressure in the reaction apparatus is set in a range of 0.2 Pa to 1 Pa. 5. 5. The film manufacturing method according to claim 1, wherein the sputtering method is performed at a substrate temperature in a range of room temperature to 300 ° C. or less. 6. The method for producing a film according to claim 1, wherein the substrate is an insulating substrate, a semiconductor substrate, a metal substrate, or a flexible substrate. The film manufacturing method according to claim 1, wherein a diameter of the columnar structure is 0.5 nm or more and 15 nm or less.

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