JP2004223695A - Structure, manufacturing method of the structure, and device using the structure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a new fine structure as a function property material, and a manufacturing method thereof. <P>SOLUTION: The structure includes a first material and a second material. A columnar member including the first material is surrounded by an area including the second material, and the structure includes the second material in the proportions of 20atomic% to 70atomic% to the whole quantity of the first and second materials. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

【０１２９】
このように、アルミニウムとシリコンの全量に対するシリコン含有量を、２０ａｔｏｍｉｃ％以上７０ａｔｏｍｉｃ％以下に調整することで、アルミニウムの柱状構造体がシリコン領域内に分散した構造体が実現できる。アルミニウムとシリコンの組成を変化させることで、柱状構造体の孔径の制御が可能であり、また、直線性に優れたアルミニウム細線の作製が可能になる。なお、構造の確認には、ＳＥＭの他にもＴＥＭ（透過型電子顕微鏡）等を利用するのがよい。
【０１３０】
さらに、比較試料Ｃとして、ガラス基板上に、スパッタ法を用いて、シリコンをアルミニウムとシリコンの全量に対して５５ａｔｏｍｉｃ％含んだアルミニウムシリコン混合膜を約２００ｎｍ形成した。ターゲットには、４インチのアルミニウムターゲット上に１５ｍｍ角のシリコンチップ１３を８枚おいたものを用いた。スパッタ条件は、ＲＦ電源を用いて、Ａｒ流量：５０ｓｃｃｍ、放電圧力：０．７Ｐａ、投入電力：１ｋＷとした。また、基板温度は３５０℃とした。
【０１３１】
ＦＥ−ＳＥＭ（電界放出走査型電子顕微鏡）にて、比較試料Ｃを観察した。基板真上方向から見た試料表面には、大きなアルミニウムの塊が確認できた。また、エックス線回折測定により、シリコンが結晶化していることが確認された。つまり、柱状構造を有するアルミニウムナノ構造体を確認することができず、シリコン領域も非晶質ではなく結晶化していた。即ち、基板温度が高すぎると、より安定な状態に変化してしまうため、このようなアルミニウムナノ構造体を形成する膜成長ができていないと思われる。
【０１３２】
なお、柱状の部材が分散した構造体を得る為に、ターゲットの組成をＡｌ：Ｓｉ＝５５：４５などに設定することも好ましい形態である。
【０１３３】
（実施例２）
図４に本発明のアルミニウムシリコンナノ構造体の概略図を示す。ここでは、シリコンに周囲を囲まれたアルミニウムナノ構造体部分が円柱構造であり、その径２ｒが６ｎｍ、間隔２Ｒが９ｎｍ、長さＬが１０ｎｍであるアルミニウム量子ドットである場合について示す。なお、図４において、３１が基板で、３２がアルミニウム量子ドット、３３がシリコンである。ます、アルミニウムナノ構造部分がアルミニウム量子ドットであるアルミニウムシリコンナノ構造体の作製方法を説明する。シリコン基板上に、物理蒸着法である電子ビーム蒸着法を用いて、シリコンをアルミニウムとシリコンの全量に対して３０ａｔｏｍｉｃ％含んだアルミニウムシリコン混合膜を約１０ｎｍ形成する。ここではシリコンのるつぼとアルミニウムのるつぼの２種類のるつぼを同時に電子ビーム蒸着する。
【０１３４】
次に、このようにして得られたアルミニウムシリコン混合膜をＩＣＰ（誘導結合型プラズマ発光分析）にて、シリコンのアルミニウムとシリコンの全量に対する分量（ａｔｏｍｉｃ％）を分析した。その結果、シリコンのアルミニウムとシリコンの全量に対する分量は約３０ａｔｏｍｉｃ％であった。なお、ここでは測定の都合上、基板として、カーボン基板上に堆積したアルミニウムシリコン混合膜を用いた。
【０１３５】
ＦＥ−ＳＥＭ（電界放出走査型電子顕微鏡）にて、作製した試料を観察した。基板真上方向から見た表面の形状は図４のように、シリコンにより囲まれた円形状のアルミニウム量子ドットが二次元的に配列していた。アルミニウムナノ構造体部分（アルミニウム量子ドット）の孔径２ｒは６ｎｍであり、その平均中心間間隔２Ｒは９ｎｍであった。また、断面をＦＥ−ＳＥＭにて観察した所、高さは１０ｎｍであり、それぞれのアルミニウム量子ドットはお互いに独立していた。
【０１３６】
シリコンにより囲まれた間隔２Ｒが９ｎｍ、径２ｒが６ｎｍ、高さＬが１０ｎｍのアルミニウム量子ドットを有したアルミニウムシリコンナノ構造体を作製することができた。なお、Ｘ線回折法でこの試料を観察した所、アルミニウムは結晶質であり、シリコンは非晶質であった。
【０１３７】
（実施例３）
図３を再度利用して、第１の材料とてアルミニウムを、第２の材料としてシリコンとゲルマニウムを用いた場合について説明する。図３は、アルミニウムシリコンゲルマニウム混合体の概略図である。ここでは、シリコンゲルマニウムに周囲を囲まれたアルミニウムナノ構造体部分が円柱状構造であり、その径２ｒが７ｎｍであり、間隔２Ｒが１０ｎｍ、長さＬが２００ｎｍであるアルミニウム細線について示す。なお、図３において、２１が基板で、２２がアルミニウム量子細線（アルミニウムを含み構成される柱状構造体）、２３が非晶質シリコンゲルマニウムである。図１０に実際のＳＥＭ写真を示す。
【０１３８】
まず、アルミニウム細線の作製方法を説明する。
【０１３９】
ガラス基板２１上に、ＲＦマグネトロンスパッタリング法を用いて、シリコンとゲルマニウムの総量をアルミニウムとシリコンとゲルマニウムの全量に対して３８ａｔｏｍｉｃ％含んだアルミニウムシリコンゲルマニウム混合膜を約２００ｎｍ形成する。ターゲットには、図２に示すように、４インチのアルミニウムターゲット上に１５ｍｍ角のシリコンチップを２枚及び、ゲルマニウムチップを２枚おいたものを用いた。スパッタ条件は、ＲＦ電源を用いて、Ａｒ流量：５０ｓｃｃｍ、放電圧力：０．７Ｐａ、投入電力：３００Ｗとした。また、基板温度は室温とした。
【０１４０】
なお、ここではターゲット１２として、アルミニウムターゲット上にシリコンとゲルマニウムチップ１３を合計４枚置いたものを用いたが、シリコンとゲルマニウムチップの枚数はこれに限定されるものではなく、スパッタ条件により変化し、アルミニウムとシリコンとゲルマニウムの全量に対して、シリコンとゲルマニウムの合計組成比が約３８ａｔｏｍｉｃ％近辺になれば良い。また、ターゲットはアルミニウムターゲット上にシリコン及びゲルマニウムチップを置いたものに限定したものではなく、シリコンターゲット上にアルミニウムチップとシリコンチップを置いたものでも良いし、シリコンとゲルマニウムとアルミニウムの粉末を焼結したターゲットを用いても良い。
【０１４１】
さらに、ここではスパッタリング法としてＲＦスパッタリング法を用いたが、これに限定されるものではなく、ＥＣＲスパッタリング法、ＤＣスパッタリング法、イオンビームスパッタリング法でよい。さらに、スパッタリング条件は装置に依存しており、これに限定されるものではない。
【０１４２】
次に、このようにして得られたアルミニウムシリコンゲルマニウム混合膜をＩＣＰ（誘導結合型プラズマ発光分析）にて、シリコンとゲルマニウムとアルミニウムの全量に対する分量（ａｔｏｍｉｃ％）を分析した。その結果、シリコンとゲルマニウムの総量（合計組成比）は、アルミニウムとシリコンとゲルマニウムの全量に対して、約３８ａｔｏｍｉｃ％であった。
【０１４３】
なお、ここでは測定の都合上、基板として、カーボン基板上に堆積したアルミニウムシリコンゲルマニウム混合膜を用いた。
【０１４４】
ＦＥ−ＳＥＭ（電界放出走査型電子顕微鏡）にて、アルミニウムシリコンゲルマニウム混合膜を観察した。基板斜め真上方向から見た表面の形状は図３のように、シリコンとゲルマニウムの混合体に囲まれたほぼ円形のアルミニウムナノ柱状構造体が二次元的に配列していた。アルミニウムナノ構造体部分の画像処理より求めた孔径は７ｎｍであり、その平均中心間間隔は１０ｎｍであった。また、断面をＦＥ−ＳＥＭにて観察した所、膜の高さは２００ｎｍであり、それぞれのアルミニウムのナノ柱状構造体部分はお互いに独立していた。
【０１４５】
また、Ｘ線回折法でこの試料を観察した所、結晶性を示すシリコン及びゲルマニウムのピークは確認できず、シリコンとゲルマニウムの混合物は非晶質であった。なお、アルミニウムのピークが複数確認でき、多結晶であることが分かった。
【０１４６】
従って、シリコンとゲルマニウム混合体に周囲を囲まれた間隔２Ｒが１０ｎｍ、径２ｒが７ｎｍ、高さＬが２００ｎｍのアルミニウム細線を含んだアルミニウムシリコンゲルマニウム混合体を作製することができた。
【０１４７】
本実施例で説明したように、アルミニウムシリコンゲルマニウム混合膜をスパッタ法などの非平衡状態で物質を形成する成膜法で形成することで、基板表面上に数から数〜数十ｎｍスケールのアルミニウム量子ドットあるいはアルミニウム量子細線などのアルミニウムのナノ柱状構造体がシリコンゲルマニウム中に２次元的に形成された構造を有するアルミニウムシリコンゲルマニウム混合体を形成することが可能となる。
【０１４８】
（比較例）
また、比較試料Ｄとして、ガラス基板上に、スパッタ法を用いて、シリコンとゲルマニウムをアルミニウムとシリコンとゲルマニウムの全量に対して１５ａｔｏｍｉｃ％含んだアルミニウムシリコンゲルマニウム混合膜を約２００ｎｍ形成した。ターゲットには、４インチのアルミニウムターゲット上に１５ｍｍ角のシリコンチップ及びゲルマニウムチップを各々１枚おいたものを用いた。スパッタ条件は、ＲＦ電源を用いて、Ａｒ流量：５０ｓｃｃｍ、放電圧力：０．７Ｐａ、投入電力：３００Ｗとした。また、基板温度は室温とした。
【０１４９】
ＦＥ−ＳＥＭ（電界放出走査型電子顕微鏡）にて、比較試料Ｄを観察した。基板真上方向から見た表面の形状は、アルミニウム部分は円形状にはなっておらず、各々のアルミニウム部分は、連続的につながったような構造を形成した。即ち、アルミニウムの柱状構造体がシリコンゲルマニウム領域内に分散した微細構造体となっていなかった。さらに、その大きさ（長さ）は２０ｎｍを遥かに超えていた。また、断面をＦＥ−ＳＥＭにて観察した所、アルミニウム部分の幅は柱状にはなっておらず、数十ｎｍを超える大きな塊を形成していた。なお、このようにして得られたアルミニウムシリコンゲルマニウム混合膜をＩＣＰ（誘導結合型プラズマ発光分析）にて、シリコンとゲルマニウムのアルミニウムとシリコンとゲルマニウムの全量に対する分量（ａｔｏｍｉｃ％）を分析した。その結果、シリコンとゲルマニウムの総量は、アルミニウムとシリコンとゲルマニウムの全量（１００ａｔｏｍｉｃ％とする）に対して、約１５ａｔｏｍｉｃ％であった。
【０１５０】
さらに、比較試料Ｅとして、ガラス基板上に、スパッタ法を用いて、シリコンゲルマニウムをアルミニウムとシリコンゲルマニウムの全量に対して７５ａｔｏｍｉｃ％含んだアルミニウムシリコンゲルマニウム混合膜を約２００ｎｍ形成した。ターゲットには、４インチのアルミニウムターゲット上に１５ｍｍ角のシリコン及びゲルマニウムチップを各々５枚おいたものを用いた。スパッタ条件は、ＲＦ電源を用いて、Ａｒ流量：５０ｓｃｃｍ、放電圧力：０．７Ｐａ、投入電力：３００Ｗとした。また、基板温度は室温とした。
【０１５１】
ＦＥ−ＳＥＭ（電界放出走査型電子顕微鏡）にて、比較試料Ｅを観察した。基板真上方向から見た試料表面には、アルミニウム部分を観察することができなかった。また、断面をＦＥ−ＳＥＭにて観察しても、明確なアルミニウム部分を観察することができなかった。なお、このようにして得られたアルミニウムシリコンゲルマニウム混合膜をＩＣＰ（誘導結合型プラズマ発光分析）にて、シリコンとゲルマニウムのアルミニウムとシリコンとゲルマニウムの全量に対する分量（ａｔｏｍｉｃ％）を分析した。その結果、シリコンとゲルマニウムの総量は、アルミニウムとシリコンとゲルマニウムの全量（１００ａｔｏｍｉｃ％とする）に対しては約７５ａｔｏｍｉｃ％であった。
【０１５２】
このように、アルミニウムとシリコンとゲルマニウムの全量に対するシリコンとゲルマニウム含有量を、少なくとも２０ａｔｏｍｉｃ％以上７０ａｔｏｍｉｃ％以下に調整することで、シリコンゲルマニウム中にアルミニウムのナノ柱状構造体を形成することが可能であり、また、直線性に優れたアルミニウム細線の作製が可能になる。
【０１５３】
さらに、比較試料Ｆとして、ガラス基板上に、スパッタ法を用いて、シリコンとゲルマニウムの総量をアルミニウムとシリコンとゲルマニウムの全量に対して３８ａｔｏｍｉｃ％含んだアルミニウムシリコン混合膜を約２００ｎｍ形成した。ターゲットには、４インチのアルミニウムターゲット上に１５ｍｍ角のシリコンチップ及びゲルマニウムチップを各々２枚おいたものを用いた。スパッタ条件は、ＲＦ電源を用いて、Ａｒ流量：５０ｓｃｃｍ、放電圧力：０．７Ｐａ、投入電力：３００Ｗとした。また、基板温度は３５０℃とした。
【０１５４】
ＦＥ−ＳＥＭ（電界放出走査型電子顕微鏡）にて、比較試料Ｆを観察した。基板真上方向から見た試料表面には、円形あるいは楕円形をしたアルミニウムを確認することができなかった。つまり、アルミニウムのナノ柱状構造体を確認することができなかった。即ち、基板温度が高すぎると、より安定な状態に変化してしまうため、図１や図３に示したようなアルミニウムのナノ柱状構造体を形成する膜成長ができていないと思われる。
【０１５５】
（実施例４）
図４を再度利用して、アルミニウムシリコンゲルマニウム混合体について説明する。ここでは、シリコンゲルマニウムに周囲を囲まれたアルミニウムのナノ構造体部分が円柱構造であり、その径２ｒが６ｎｍ、間隔２Ｒが８ｎｍ、長さＬが１０ｎｍであるアルミニウム量子ドットである場合について示す。なお、図４において、３１が基板で、３２がアルミニウム量子ドット、３３が非晶質シリコンゲルマニウムである。ます、アルミニウムのナノ柱状構造部分がアルミニウム量子ドットであるアルミニウムシリコンゲルマニウム混合体の作製方法を説明する。シリコン基板上に、マグネトロンスパッタリング法を用いて、シリコンとゲルマニウムをアルミニウムとシリコンとゲルマニウムの全量に対して３３ａｔｏｍｉｃ％含んだアルミニウムシリコンゲルマニウム混合膜を約１０ｎｍ形成する。
【０１５６】
次に、このようにして得られたアルミニウムシリコンゲルマニウム混合膜をＩＣＰ（誘導結合型プラズマ発光分析）にて、シリコンとゲルマニウムのアルミニウムとシリコンとゲルマニウムの全量に対する分量（ａｔｏｍｉｃ％）を分析した。その結果、シリコンとゲルマニウムのアルミニウムとシリコンとゲルマニウムの全量に対する分量は約３３ａｔｏｍｉｃ％であった。なお、ここでは測定の都合上、基板として、カーボン基板上に堆積したアルミニウムシリコンゲルマニウム混合膜を用いた。
【０１５７】
ＦＥ−ＳＥＭ（電界放出走査型電子顕微鏡）にて、作製した試料を観察した。基板斜め真上方向から見た表面の形状は図４のように、シリコンゲルマニウムにより囲まれた円形状のアルミニウム量子ドットが二次元的に配列していた。アルミニウムナノ構造体部分（アルミニウム量子ドット）の孔径２ｒは６ｎｍであり、その平均中心間間隔２Ｒは８ｎｍであった。また、断面をＦＥ−ＳＥＭにて観察した所、高さは１０ｎｍであり、それぞれのアルミニウム量子ドットはお互いに独立していた。
【０１５８】
これによりシリコンゲルマニウムにより囲まれた間隔２Ｒが８ｎｍ、径２ｒが６ｎｍ、高さＬが１０ｎｍのアルミニウム量子ドットを有したアルミニウムシリコンゲルマニウム混合体を作製することができた。なお、Ｘ線回折法でこの試料を観察した所、アルミニウムは結晶質であり、シリコンゲルマニウムは非晶質であった。
【０１５９】
アルミニウムとシリコンとゲルマニウムの全量に対するシリコンとゲルマニウム含有量を、変化させることで、シリコンゲルマニウム中にアルミニウムのナノ柱状構造体の径及び間隔を変化させることが可能であり（典型的には、シリコンとゲルマニウムの量を少なくすると、アルミニウムのナノ柱状構造の径が大きくなる）、また、アルミニウムシリコンゲルマニウム混合体の膜厚を調節することで、アルミニウムのナノ柱状構造体の高さを変えることができる。
【０１６０】
さらに、アルミニウムシリコンゲルマニウム混合体中のゲルマニウムとシリコンの組成比を変化させることで、アルミニウムの柱状構造体の径や間隔を変化させることも可能である。
【０１６１】
【発明の効果】
以上説明したように、本発明によれば、柱状の部材がそれを取り囲む領域に分散した構造体、その製造方法、及び当該構造体を用いた装置を提供することができる。
【図面の簡単な説明】
【図１】（ａ）は本発明に係る構造体の一例を上面から見た概略図である。
（ｂ）は本発明に係る構造体の一例を側面から見た概略図である。
【図２】本発明に係る構造体の作製方法の一例を示す図である。
【図３】本発明に係る構造体の一例を示す図である。
【図４】本発明に係る構造体の一例を示す図である。
【図５】本発明に係る構造体を用いた単電子メモリの模式図である。
【図６】本発明に係るアルミニウムシリコン混合体のＦＥ−ＳＥＭ像である。
【図７】本発明に係るアルミニウムシリコン混合体のＦＥ−ＳＥＭ像である。
【図８】本発明に係るアルミニウムシリコン混合体のＦＥ−ＳＥＭ像である。
【図９】本発明に係る構造体を用いた単電子メモリの模式図である。
【図１０】本発明に係る混合体のＦＥ−ＳＥＭ像である。
【符号の説明】
１、１１ 柱状構造体
２、２３、３３ 柱状構造体を取り囲む領域
３、２１、３１、５１ 基板
１２ ターゲット
１３ シリコンチップあるいはゲルマニウムチップ
２２ 柱状構造体
３２ 柱状構造体
５２ 絶縁体
５３ アルミニウムシリコン混合体
５４ ドレイン電極
５５ ゲート絶縁物
５６ ゲート電極
５７ ソース電極[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a structure including a columnar member, a method for manufacturing the same, and a device using the structure.
[0002]
[Background Art]
In recent years, interest in fine structures as functional materials has been increasing.
[0003]
As a method for manufacturing such a fine structure, there is a method for directly manufacturing a fine structure by a semiconductor processing technique represented by a fine pattern forming technique such as photolithography (for example, see Patent Document 1).
[0004]
In addition to the above-described semiconductor processing technology, there is a method that utilizes a self-organization phenomenon or a self-forming phenomenon of a material. That is, it is intended to realize a novel fine structure based on a naturally-occurring regular structure.
[0005]
[Patent Document 1]
JP-A-5-55545 (page 3, FIG. 1)
[0006]
[Problems to be solved by the invention]
This method using the self-organizing phenomenon or the self-forming phenomenon has the potential to realize nano-order structures as well as micron-order structures. It was required to provide and establish a manufacturing method.
[0007]
Therefore, an object of the present invention is to provide a novel structure, a method of manufacturing the same, and an apparatus using the same.
[0008]
[Means for Solving the Problems]
A structure according to the present invention is a structure including a first material and a second material (excluding a case where the second material is only Ge). A columnar member comprising and comprising the second material is surrounded by a region comprising and comprising the second material, and the structure comprises the second material comprising the first material and the second material. It is characterized in that it is contained at a ratio of 20 atomic% or more and 70 atomic% or less with respect to the total amount.
[0009]
Here, the first material is, for example, aluminum, and the second material is, for example, silicon or a mixture of silicon and germanium. The average diameter of the columnar members is, for example, 50 nm or less, and the center-to-center distance between the adjacent columnar members is, for example, 30 nm or less.
[0010]
Further, in the method for manufacturing a structure according to the present invention, there is provided a step of preparing a substrate, a columnar member formed on the substrate in a non-equilibrium state and including the first material, and a second material. (Excluding the case where the second material is only Ge), and forming a structure having a region surrounding the columnar member, wherein the second material is added to the structure. The structure is formed such that the structure is contained at a ratio of 20 atomic% to 70 atomic% with respect to the total amount of the first material and the second material.
[0011]
Further, an electronic device using the structure can be provided. For example, it is realized by forming an insulating region or the like on the structure. Here, the electronic device is, for example, a single-electron transistor or a single-electron memory, and further includes an information processing apparatus provided with them.
[0012]
The aluminum-silicon mixture according to the present invention is a film-like aluminum-silicon mixture, which has a columnar structure including aluminum and a silicon region surrounding the columnar structure, and the mixture includes Is characterized in that silicon is contained at a ratio of 20 atomic% or more and 70 atomic% or less.
[0013]
The aluminum-silicon-germanium mixture according to the present invention is a film-like aluminum-silicon-germanium mixture, having a columnar structure including aluminum and a silicon germanium region surrounding the columnar structure, and The mixture is characterized in that the total amount of silicon and germanium is contained in a ratio of 20 atomic% to 70 atomic%.
[0014]
Further, the structure according to the present invention is a structure including a plurality of columnar members, a region surrounding a side surface of the plurality of columnar members, the columnar members have a diameter of less than 20 nm, In addition, a center-to-center distance between the plurality of columnar members is 30 nm or less. In the structure according to the present invention, a columnar member including aluminum and a region surrounding the columnar member are formed at the same time, and the columnar member has a diameter of less than 20 nm. .
[0015]
The structure including the columnar member according to the present invention (for example, an aluminum-silicon mixture) can be applied as various base materials, and can be applied to various quantum devices such as a single-electron transistor and a single-electron memory.
[0016]
Hereinafter, the present invention will be specifically described.
[0017]
BEST MODE FOR CARRYING OUT THE INVENTION
(Embodiment 1)
The structure according to the present invention will be described with reference to FIG.
[0018]
The figure shows a state in which the columnar structure 1 is dispersed in a region 2 surrounding the columnar structure, and FIGS. 1A and 1B are a top view and a cross-sectional view, respectively. 3 is a substrate.
[0019]
In the structure 100 shown in the figure, a columnar member 1 including and configured with a first material is surrounded by an area 2 including and configured with a second material, and the structure includes the second material. The material is contained at a ratio of 20 atomic% or more and 70 atomic% or less with respect to the total amount of the first material and the second material. As will be shown in the examples described below, as a result of investigations by the present inventors, it was possible to provide a structure in which substantially columnar members were dispersed in a matrix region surrounding the columnar members if the ratio was within the above range. . Although depending on the shape of the underlying substrate on which the structure is formed, if the substrate shape is horizontal, the columnar members are arranged substantially perpendicular to the substrate.
[0020]
The above ratio is a ratio of the second material to the total amount of the first material and the second material constituting the structure, and is preferably from 25 atomic% to 65 atomic%, more preferably from 30 atomic% to 60 atomic%. % Or less. The above ratio can be obtained, for example, by quantitative analysis using inductively coupled plasma emission spectrometry.
[0021]
It is sufficient that a columnar shape is substantially realized. For example, the second material may be included as a component of the columnar member, or the first material may be included in the region. Further, impurities such as oxygen and argon may be contained in the columnar member and its surrounding region.
[0022]
Here, examples of the first material include Al and Au. As the second material, Si, Ge, a mixture of Si and Ge (hereinafter referred to as Si _x Ge _1-x (0 <x <1). ) Or C. In particular, it is desirable that the second material be a material that can be amorphous.
[0023]
Further, the first and second materials are preferably materials having a eutectic point (so-called eutectic materials) in both component system phase equilibrium diagrams. In particular, the eutectic temperature is 300 ° C. or higher, preferably 400 ° C. or higher. Note that eutectoid materials can also be used.
[0024]
Note that a preferable combination of the first material and the second material is a form in which Al is used as the first material and Si is used as the second material, or Al is used as the first material and the second material is used. As Si _x Ge _1-x (0 <x <1).
[0025]
It is preferable that at least a part of the columnar member is polycrystalline, and a region surrounding the columnar member is amorphous. The planar shape of the columnar member is circular or elliptical.
[0026]
In the structure, the plurality of columnar members are dispersed in a matrix including the second material. The diameter of the columnar member (the diameter when the plane shape is a circle) can be controlled mainly according to the composition of the structure (that is, the ratio of the second material), and the average diameter is 0. The thickness is from 0.5 nm to 50 nm, preferably from 1 nm to 20 nm, and more preferably from 2 nm to 10 nm. In particular, the diameter is preferably less than 20 nm. The diameter here is 2r in FIG. 1 (b). In the case of an ellipse or the like, the longest outer diameter portion may be within the above range. Here, the average diameter is a value derived from, for example, a columnar portion observed in an actual SEM photograph (in a range of about 100 nm × 100 nm) from the photograph directly or by image processing using a computer. However, the optimum diameter and the following distance may vary depending on the material or composition used or the use of the structure.
[0027]
The center-to-center distance 2R between the plurality of columnar members (FIG. 1B) is 2 nm or more and 30 nm or less, preferably 5 nm or more and 20 nm or less, and more preferably 5 nm or more and 15 nm or less. Of course, as the lower limit of the center-to-center distance, it is necessary for the 2R to have at least an interval at which the columnar structures do not contact each other. Note that, as the second material (that is, the constituent material of the region surrounding the columnar member), a mixture of a plurality of elements (for example, Si _x Ge _1-x ), The center-to-center distance can be controlled by the ratio of the mixture ratio. Here, the center-to-center distance between the columnar members is the center-to-center distance between adjacent columnar members.
[0028]
In addition, the structure is preferably a film-like structure, and in such a case, the column-shaped member includes the second material so as to be substantially perpendicular to an in-plane direction of the film. It will be dispersed in the matrix. The thickness of the film-like structure is not particularly limited, but can be applied in the range of 1 nm to 100 μm. A more realistic film thickness is about 1 nm to 1 μm or 1 nm to 3 μm in consideration of the process time and the like. In particular, it is preferable that the columnar structure is maintained even at a film thickness of 300 nm or more. The columnar member preferably has a structure that does not substantially have a branch in the thickness direction (length direction).
[0029]
The structure is preferably a film-like structure, and the structure may be provided on a substrate. The substrate is not particularly limited, but may be a substrate having an insulator or an insulating layer on the surface, an insulating substrate such as quartz glass, tempered glass, crystallized glass, glass, a silicon substrate, gallium arsenide, Alternatively, as long as the above structure can be formed over a semiconductor substrate such as indium phosphide, a metal substrate such as aluminum, or a substrate as a supporting member, a flexible substrate (eg, a polyimide resin) can be used. In the case of a silicon substrate, a P-type, N-type, high-resistance substrate, low-resistance substrate, or the like can be used as appropriate.
[0030]
Note that an electronic device can be provided by further forming an insulating film or the like on the structure. Here, the electronic device is a quantum dot, a quantum wire, a quantum wire transistor, a single-electron transistor, a single-electron memory, or the like, and further includes an information processing apparatus including them.
[0031]
The above-described structure (hereinafter, also referred to as a mixture) in the present invention can be applied to various base materials, and can be applied to various quantum devices such as a single-electron transistor and a single-electron memory, a microelectrode, and the like. .
[0032]
Further, the above-mentioned structure (for example, an aluminum silicon mixture) in the present invention can be used as a dry etching or wet etching mask for the purpose of processing another substrate or a film on the substrate.
[0033]
Further, the present invention makes it possible to apply columnar structures such as quantum dots and quantum wires in various forms, and greatly expands the range of application. The structure according to the present invention can itself be used as a functional material.
[0034]
(Production method)
The structure can be manufactured using a method of forming a film in a non-equilibrium state. As the film formation method, a sputtering method is preferable, but a film formation method for forming a substance in an arbitrary non-equilibrium state, such as resistance heating evaporation, electron beam evaporation (EB evaporation), or ion plating, is applicable. is there. When the sputtering is performed, magnetron sputtering, RF sputtering, ECR sputtering, or DC sputtering can be used. When the sputtering method is used, the film is formed in an argon gas atmosphere with the pressure in the reactor set to about 0.2 to 1 Pa or about 0.1 to 1 Pa. At the time of sputtering, the first material and the second material may be separately prepared as target materials (for example, a target material in which aluminum and silicon are separated) is used, but at a desired ratio in advance. A target material obtained by firing the first material and the second material may be used. In the structure according to the present embodiment, a columnar member and a region surrounding the side surface thereof are formed simultaneously. Note that it is also preferable to perform sputtering in a state where plasma is not in contact with the substrate on which the film is grown.
[0035]
In addition, the structure according to the present invention can maintain a state in which the side surfaces of the columnar structure members are dispersed in a region surrounding the members, even if the film is formed to have a predetermined thickness or more. That is, even when the film thickness increases, the diameter of the columnar structure does not change significantly in the film thickness direction. The predetermined thickness is 110 nm or more, more preferably 300 nm or more.
[0036]
The structure formed on the substrate can be manufactured at a substrate temperature of 300 ° C or lower, preferably 20 ° C or higher and 200 ° C or lower, more preferably 100 ° C or higher and 150 ° C or lower. .
[0037]
(Embodiment 2: In the case of aluminum silicon mixture)
A structure in which the first and second materials are aluminum and silicon, respectively, will be described again with reference to FIG. 1 described in the above embodiment.
[0038]
FIG. 1A is a schematic plan view of the aluminum silicon mixture according to the present invention. FIG. 1B is a schematic cross-sectional view when the sample is cut along a broken line AA ′ in FIG. In FIG. 1, 1 is a columnar structure containing aluminum, and 2 is a silicon region surrounding the columnar structure. In FIG. 1B, reference numeral 3 denotes a substrate.
[0039]
The film-shaped aluminum-silicon mixture 100 formed on the substrate 3 has a silicon content of at least 20 atomic% and not more than 70 atomic% with respect to the total amount. Preferably, it is 25 atomic% or more and 65 atomic% or less, and more preferably 30 atomic% or more and 60 atomic% or less. If the proportion of silicon is within the above range, an aluminum-silicon mixture in which the columnar structures 1 are dispersed in the silicon region 2 can be obtained.
[0040]
The ratio (atomic%) is a value obtained by quantitatively analyzing the amounts of silicon and aluminum in the aluminum-silicon mixture film by, for example, inductively coupled plasma emission spectrometry.
[0041]
In the above ratio, atomic% is used as a unit. However, when wt% is used as a unit, 20 atomic% or more and 70 atomic% or less, 20.65 wt% or more and 70.84 wt% or less (for Al The atomic weight is calculated as 26.982, and the atomic weight of Si is calculated as 28.086.)
[0042]
The aluminum-silicon mixture 100 according to the present invention includes an aluminum columnar structure having a composition containing aluminum as a main component, and a silicon region around the aluminum columnar structure containing silicon as a main component.
[0043]
The columnar structure 1 containing aluminum contains aluminum as a main component, but may contain other elements such as silicon, oxygen, and argon if a columnar structure microstructure is obtained. You may. The main component means that, for example, the proportion of aluminum is 50 atomic% or more, more preferably 80 atomic% or more in the component composition ratio of the columnar structure portion.
[0044]
The composition of the silicon region surrounding the columnar structure is mainly composed of silicon, but if a columnar structure microstructure is obtained, various elements such as aluminum, oxygen, and argon can be used. May be contained. The main component means that the proportion of silicon is, for example, 50 atomic% or more, more preferably 80 atomic% or more, in the component composition ratio of the silicon region.
[0045]
Preferably, the silicon region is amorphous. It is also preferable that the silicon region is made of amorphous silicon from the viewpoint of insulating properties. The reason is that amorphous silicon has a higher defect density and a larger band gap than crystalline silicon, so that the electrical insulation of the base material separating the columnar structures is improved.
[0046]
The mixture used here indicates a state in which aluminum is liberated in the silicon matrix.
[0047]
(Construction)
The columnar structure 1 containing aluminum has a circular or elliptical planar shape when viewed from the film surface. Of course, any shape may be used as long as the columnar structures 1 are appropriately dispersed in the silicon region 2.
[0048]
The diameter of the columnar structure in the aluminum silicon mixture according to the present invention is not particularly limited, but the average diameter is 0.5 nm or more and 50 nm or less, preferably 0.5 nm or more and 20 nm or less, and more preferably 0.1 nm or less. The thickness is preferably 5 nm or more and 10 nm or less. The diameter here is 2r in FIG. 1 (b). In the case of an ellipse or the like, the longest outer diameter portion may be within the above range. Here, the average diameter is, for example, a value derived by performing image processing with a computer on an aluminum portion observed in an actual SEM photograph (range of about 100 nm × 100 nm).
[0049]
By the way, in a nanometer-sized nanostructure (approximately in the range of 0.1 nm to 100 nm), the size of the nanostructure becomes smaller than a certain characteristic length, so that the movement of electrons is confined. May show chemical and chemical properties. From such a viewpoint, a nanostructure is useful as a functional material, and even in the aluminum-silicon mixture according to the present invention, the diameter of the columnar structure constituting the mixture is 0.5 nm or more and 50 nm or less, particularly 0 nm or less. When it is not less than 0.5 nm and not more than 10 nm, various uses as a nanostructure are possible.
[0050]
Further, the distance 2R between the centers of the plurality of columnar structures 1 (FIG. 1B) is 30 nm or less, preferably 15 nm or less. Of course, the 2R has an interval at which the columnar structures do not contact each other. In particular, both the diameter 2r and the center-to-center distance 2R are preferably within the above ranges.
[0051]
For example, the diameter of the aluminum nanostructure is 1 to 9 nm, the interval between the aluminum nanostructures is 5 to 10 nm, and the ratio between the height and the diameter of the aluminum nanostructure is 0.1 to 100,000. And a microstructure in which the aluminum nanostructure is perpendicular to the substrate.
[0052]
The shape of the columnar structure 1 as viewed from the cross section of the substrate is preferably a rectangular shape as shown in FIG. 1B, but can take a shape such as a square or a trapezoid. Note that the columnar structure includes a shape having an arbitrary aspect ratio (diameter / length). For example, the aspect ratio (diameter 2r / length L) can be 0.1 to 100,000.
[0053]
For example, the length L of the columnar structure can be applied in a range of 1 nm to 100 μm.
[0054]
In particular, when the diameter 2r of the columnar structure is, for example, 1 to 10 nm and the center-to-center distance 2R is 5 to 15 nm, the case where the length L is controlled in the range of 1 nm to several μm is considered. When the length L is several nm to several tens nm (when the ratio of length to diameter is low), the columnar structure 1 is an aluminum quantum dot, and when it is larger than that, it is an aluminum quantum wire.
[0055]
The aluminum-containing columnar structures 1 are separated from each other by a silicon region containing silicon as a main component, as shown in FIG. That is, a plurality of columnar structures are dispersed in the silicon region.
[0056]
The aluminum-containing columnar structures 1 are preferably aligned in a specific direction. As shown in FIG. 1 (b), it is particularly preferable that the substrate is aligned in a direction perpendicular to the substrate.
[0057]
The substrate 3 is not particularly limited, but an aluminum-silicon mixture is formed on an insulating substrate such as quartz glass, a silicon substrate, a semiconductor substrate such as gallium arsenide or indium phosphide, or a substrate as a support member. If possible, a flexible substrate (such as a polyimide resin) can also be used. Further, a substrate in which one or more films are formed on a supporting substrate may be used.
[0058]
(Embodiment 3: Manufacturing method of aluminum silicon mixture)
The method for manufacturing the aluminum-silicon mixture according to the present invention will be described with reference to FIG. Here, an example in which a sputtering method is used as a method for forming a film in a non-equilibrium state will be described. In FIG. 2, 11 is a substrate, and 12 is a sputtering target. When the sputtering method is used, the ratio between aluminum and silicon can be easily changed.
[0059]
As shown in FIG. 2, an aluminum-silicon mixed film is formed on a substrate by a magnetron sputtering method which is a film forming method for forming a substance in a non-equilibrium state.
[0060]
Silicon and aluminum as raw materials are achieved by disposing a silicon chip on an aluminum target substrate as shown in FIG. In FIG. 2, the silicon chip is divided into a plurality of pieces, but is not limited to this, and may be one as long as a desired film can be formed. However, in order to uniformly disperse the columnar structure containing aluminum uniformly in the silicon region, it is better to dispose the columnar structure symmetrically on the substrate 11.
[0061]
Alternatively, a fired aluminum silicon product produced by firing a predetermined amount of powder of aluminum and silicon can be used as a target material for film formation.
[0062]
Alternatively, a method in which an aluminum target and a silicon target are separately prepared and both targets are simultaneously sputtered may be used.
[0063]
The amount of silicon in the formed film is from 20 atomic% to 70 atomic%, preferably from 25 atomic% to 65 atomic%, more preferably from 30 atomic% to 60 atomic%, based on the total amount of aluminum and silicon.
[0064]
Further, the substrate temperature is 300 ° C. or less, preferably 20 ° C. or more and 200 ° C. or less, and more preferably 100 ° C. or more and 150 ° C. or less. When the amount of silicon is within such a range, an aluminum-silicon mixture in which the columnar structures are dispersed in the silicon region is obtained.
[0065]
The sample temperature during the formation of the aluminum-silicon mixed film is preferably 300 ° C. or less, more preferably 200 ° C. or less. In this manner, by forming a material in a non-equilibrium state between aluminum and silicon at a sample temperature of 300 ° C. or less, a manufactured aluminum-silicon mixed film can be formed in a state where aluminum and silicon are in a metastable state. A crystal structure is formed, and aluminum forms nano-columnar structures on the order of several nm and separates in a self-forming manner.
[0066]
The amount of silicon in the aluminum-silicon mixture can be controlled, for example, by changing the amount of silicon chips placed on the aluminum target.
[0067]
When film formation is performed in a non-equilibrium state, particularly in the case of a sputtering method, the pressure in the reaction apparatus when an argon gas is flowed is preferably about 0.2 to 1 Pa, or 0.1 to 1 Pa. However, the pressure is not particularly limited as long as the pressure is such that argon plasma is stably formed.
[0068]
As the substrate 11, for example, a substrate such as an insulating substrate such as quartz glass, a semiconductor substrate such as silicon or gallium arsenide, or a substrate on which one or more layers of films are formed. The material, thickness, mechanical strength, and the like of the substrate are not particularly limited as long as there is no problem in forming the aluminum silicon nanostructure. In addition, the shape of the substrate is not limited to a smooth plate-like shape, and examples thereof include a shape having a curved surface, a shape having a certain degree of unevenness or a step on the surface, but if there is no inconvenience to the aluminum silicon nanostructure, particularly, It is not limited.
[0069]
As a film forming method for forming a substance in a non-equilibrium state, a sputtering method is preferable, but a film forming method for forming a substance in an arbitrary non-equilibrium state such as resistance heating evaporation, electron beam evaporation (EB evaporation), or ion plating. The law is applicable.
[0070]
As a method of film formation, a simultaneous film formation process for simultaneously forming silicon and aluminum may be used, or a stacked film formation process for stacking several atomic layers of silicon and aluminum may be used.
[0071]
(Embodiment 4: Apparatus using aluminum silicon mixture)
FIG. 5 shows a schematic diagram of a single-electron transistor using an aluminum silicon mixture. By using aluminum as the quantum dots as shown in the figure, the current flowing between the source and the drain can be turned on and off by controlling the voltage applied to the gate electrode. This allows the device of FIG. 5 to function as a transistor. In the drawing, 51 is a substrate, 52 is an insulator (for example, silicon oxide), 53 is an aluminum silicon mixture, 54 is a drain electrode, 55 is a gate insulator (insulating film), 56 is a gate electrode, and 57 is a source electrode. is there. Of course, as long as the columnar structure can be realized, the above 53 can be applied to those made of various materials. Although the description has been given of the aluminum-silicon mixture, silicon and germanium can be used instead of silicon, for example, as long as a structure in which columnar members are dispersed can be realized.
[0072]
By applying the aluminum silicon structure in this manner, it can be used as a single-electron memory utilizing the quantum effect or a single-electron transistor in a similar manner.
[0073]
Further, the present invention enables aluminum nanostructures such as quantum dots and quantum wires to be applied in various forms, and greatly expands the range of application. The structure according to the present invention can itself be used as a functional material.
[0074]
(Embodiment 5: Configuration of aluminum silicon germanium mixture)
Referring again to FIG. 1, aluminum is used as the first material for forming the columnar member, and Si is used as the second material. _x Ge _1-x A case where (0 <x <1) is used will be described.
[0075]
FIG. 1A is a schematic plan view of the aluminum silicon germanium mixture according to the present invention. FIG. 1B is a schematic cross-sectional view when the sample is cut along a broken line AA ′ in FIG. In FIG. 1, 1 is a columnar structure containing aluminum, and 2 is a silicon germanium region surrounding the columnar structure. In FIG. 1B, reference numeral 3 denotes a substrate.
[0076]
In the film-like aluminum-silicon-germanium mixture 100 formed on the substrate 3, the ratio of the total amount of silicon and germanium to the total amount is 20 atomic% or more and 70 atomic% or less. Preferably, it is 25 atomic% or more and 65 atomic% or less, and more preferably 30 atomic% or more and 60 atomic% or less. If the ratio of silicon germanium is within the above range, an aluminum silicon germanium mixture in which the columnar structures 1 are dispersed in the silicon germanium region 2 can be obtained.
[0077]
The ratio (atomic%) is a value obtained by quantitatively analyzing the amounts of silicon germanium and aluminum in the aluminum silicon germanium mixture film by, for example, inductively coupled plasma emission spectrometry.
[0078]
The ratio of the total amount of silicon and germanium to the total amount of silicon, aluminum, and germanium is defined as (Si + Ge) / (Si + Ge + Al) ×, where the amount of silicon is Si, the amount of germanium is Ge, and the amount of aluminum is Al. It is a value represented by 100. That is, when Si + Ge + Al is set to 100 atomic%, it is the ratio of Si + Ge therein.
[0079]
Further, the composition ratio of silicon and germanium in the silicon germanium region constituting the silicon germanium nanostructure of the present invention is not particularly limited, as long as at least both the silicon element and the germanium element are contained. . That is, assuming that the composition ratio of silicon (Si) and germanium (Ge) is SixGe1-x, it suffices that the range is 0 <x <1. If the composition is within this range, the spacing of the aluminum nano-columnar structures should be controlled over a wider range than the spacing or diameter of the aluminum nano-columnar structures that can be achieved with aluminum silicon nanostructures or aluminum germanium nanostructures. Becomes possible. In this sense, the present invention also includes a method for controlling the distance and the diameter between the columnar members.
[0080]
The aluminum-silicon-germanium mixture 100 according to the present invention includes an aluminum columnar structure having a composition containing aluminum as a main component, and a silicon germanium region surrounding silicon germanium as a main component.
[0081]
The composition of the columnar structure portion 1 containing aluminum is mainly composed of aluminum. However, if a fine structure having a columnar structure is obtained, other elements such as silicon, germanium, oxygen, and argon can be used. It may be contained. The main component means that, for example, the proportion of aluminum is 50 atomic% or more, more preferably 80 atomic% or more in the component composition ratio of the columnar structure portion.
[0082]
Further, the composition of the silicon germanium region surrounding the columnar structure is mainly composed of silicon and germanium, but as long as it surrounds the microstructure of the columnar structure containing aluminum, aluminum, Various elements such as oxygen and argon may be contained. The main component is, for example, that the total ratio of silicon and germanium is 50 atomic% or more, more preferably 80 atomic% or more in the component composition ratio of the silicon germanium region.
[0083]
The silicon region is desirably amorphous. It is preferable that the silicon germanium region is made of amorphous silicon germanium from the viewpoint of insulating properties. The reason is that amorphous silicon germanium has a large band gap and a high electrical insulating property of the base material separating the columnar structures.
[0084]
The mixture used here indicates a state in which aluminum is liberated in silicon and germanium base materials.
[0085]
(Construction)
The columnar structure 1 containing aluminum has a circular or elliptical planar shape when viewed from the film surface. Of course, any shape may be used as long as the columnar structure 1 is appropriately dispersed in the silicon germanium region 2.
[0086]
The diameter of the columnar structure in the aluminum silicon germanium mixture according to the present invention is not particularly limited, but the average diameter is 0.5 nm or more and 30 nm or less, preferably 0.5 nm or more and 20 nm or less, more preferably 0 nm or less. The thickness is preferably not less than 0.5 nm and not more than 15 nm. The lower limit may be 1 nm or 2 nm. The diameter here is 2r in FIG. 1 (b). In the case of an ellipse or the like, the longest outer diameter portion may be within the above range. Here, the average diameter refers to, for example, a major axis when an aluminum portion observed in an SEM photograph (range of about 100 nm × 100 nm) of an actual film surface is image-processed by a computer and the aluminum portion is assumed to be an ellipse. Is the average value of the length derived as
[0087]
By the way, in a nanostructure having a nanometer size (generally in the range of 0.1 nm to 100 nm), the size becomes smaller than a certain characteristic length (e.g., mean free path), so that specific electric, optical, May show chemical properties. From such a viewpoint, a nanostructure is useful as a functional material, and even in the aluminum silicon germanium mixture according to the present invention, the diameter of the columnar structure constituting the mixture is 0.5 nm or more and 30 nm or less, particularly When the thickness is 0.5 nm or more and 15 nm or less, various uses as a nanostructure are possible.
[0088]
Further, the distance 2R between the centers of the plurality of columnar structures 1 (FIG. 1B) is preferably 30 nm or less, and more preferably 20 nm or less. Of course, the 2R has an interval at which the columnar structures do not contact each other. In particular, both the diameter 2r and the center-to-center distance 2R are preferably within the above ranges. Here, 2R can also be said to be the center-to-center distance between adjacent columnar members.
[0089]
For example, the diameter of the aluminum nanostructure having a columnar structure is 1 to 15 nm, the interval between the aluminum nanostructures is 10 to 20 nm, and the ratio between the height and the diameter of the aluminum nanostructure is 0. And a fine structure in which the aluminum nanostructure is perpendicular to the substrate.
[0090]
The shape of the columnar structure 1 viewed from the cross section of the substrate may be a rectangular shape as shown in FIG. 1B, or an arbitrary shape such as a square or a trapezoid. Note that the columnar structure includes a shape having an arbitrary aspect ratio (diameter / length). For example, the aspect ratio (diameter 2r / length L) can be 0.1 to 100,000.
[0091]
For example, the length L of the columnar structure can be applied in a range of 1 nm to 100 μm.
[0092]
In particular, when the diameter 2r of the columnar structure is, for example, 1 to 15 nm and the center-to-center distance 2R is 10 to 20 nm, the case where the length L is controlled in the range of 1 nm to several μm is considered. When the length L is several nm to several tens of nm (when the ratio of length to diameter is low), the columnar structure 1 acts as an aluminum quantum dot (0-dimensional), and when it is larger than that, the aluminum quantum wire (1 Act as a dimension).
[0093]
The aluminum-containing columnar structures 1 are separated from each other by a silicon-germanium region containing silicon and germanium as main components, as shown in FIG. 1B. That is, a plurality of columnar structures are dispersed in the silicon germanium region.
[0094]
The aluminum-containing columnar structures 1 are preferably aligned in a specific direction. As shown in FIG. 1 (b), it is particularly preferable that the substrate is aligned in a direction perpendicular to the substrate.
[0095]
The substrate 3 is not particularly limited, but may be an insulating substrate such as quartz glass or plastic, a silicon substrate, a germanium substrate, a semiconductor substrate such as gallium arsenide, or indium phosphide, or a substrate serving as a support member. As long as a silicon germanium mixture can be formed, a flexible substrate (for example, a polyimide resin or the like) can also be used. Further, a substrate in which one or more films are formed on a supporting substrate may be used.
[0096]
(Embodiment 6: Manufacturing method of aluminum silicon germanium mixture)
Referring again to FIG. 2, a method for manufacturing the aluminum silicon germanium mixture according to the present invention will be described. Here, an example in which a sputtering method is used as a method for forming a film in a non-equilibrium state will be described. In FIG. 2, 11 is a substrate, and 12 is a sputtering target. When the sputtering method is used, the ratio of aluminum, silicon, and germanium can be easily changed by changing the target material. 13 is described as a silicon chip, but in this embodiment, it is a silicon chip or a germanium chip.
[0097]
As shown in FIG. 2, an aluminum silicon germanium mixed film is formed on a substrate by a magnetron sputtering method which is a film forming method for forming a substance in a non-equilibrium state.
[0098]
Silicon, germanium and aluminum as raw materials are achieved by disposing a silicon chip and a germanium chip on an aluminum target substrate as shown in FIG. The silicon chip or the germanium chip is divided into a plurality of pieces in FIG. 2, but is not limited to this, and may be one if a desired film formation is possible. However, in order to uniformly disperse the columnar structure containing aluminum uniformly in the silicon germanium region, it is better to dispose the columnar structure on the substrate 11 as shown in FIG.
[0099]
Alternatively, a fired product of aluminum silicon germanium prepared by firing a predetermined amount of powder of aluminum, silicon, and germanium can be used as a target material for film formation. By using such a target, it is possible to form a uniform film with little variation in film composition.
[0100]
Alternatively, a method may be used in which an aluminum target, a silicon target, and a germanium target are separately prepared, and each target is simultaneously sputtered.
[0101]
The total amount of silicon and germanium in the formed film is from 20 atomic% to 70 atomic%, preferably from 25 atomic% to 65 atomic%, more preferably from 30 atomic% to 60 atomic%, based on the total amount of aluminum, silicon and germanium. It is as follows.
[0102]
The substrate temperature is 300 ° C. or lower, preferably 200 ° C. or lower, and more preferably 100 ° C. or higher and 150 ° C. or lower. The lower limit is 0 ° C. or room temperature. If the total amount of silicon and germanium is made within such a temperature range, an aluminum silicon germanium mixture in which the columnar structures are dispersed in the silicon germanium region is obtained.
[0103]
The sample temperature when the aluminum silicon germanium mixed film is formed is preferably 300 ° C. or lower, more preferably 200 ° C. or lower. As described above, although depending on the film forming conditions, an aluminum-silicon-germanium mixed film is formed by forming a material in a non-equilibrium state between aluminum, silicon, and germanium at a sample temperature of 300 ° C. or less. In aluminum, aluminum, silicon, and germanium have a metastable eutectic structure, and aluminum forms a nano-column structure at a level of several nanometers, and is self-separated from the silicon germanium region.
[0104]
The total amount of silicon and germanium in the aluminum-silicon-germanium mixture can be determined, for example, by changing the amount of silicon chips or germanium chips placed on an aluminum target, or by using a target prepared by changing the amount of aluminum, silicon, and germanium powder mixed. Can be controlled by
[0105]
When film formation is performed in a non-equilibrium state, particularly in the case of a sputtering method, the pressure in the reaction apparatus when an argon gas is flowed is preferably about 0.2 to 1 Pa, or 0.1 to 1 Pa. However, the pressure is not particularly limited as long as the pressure is such that argon plasma is stably formed.
[0106]
As the substrate 11, for example, a substrate such as an insulating substrate such as quartz glass, a semiconductor substrate such as silicon or gallium arsenide, or a substrate on which one or more layers of films are formed. The material, thickness, mechanical strength, and the like of the base are not particularly limited as long as there is no problem in forming the aluminum nanocolumn structure. In addition, the shape of the substrate is not limited to a smooth plate-like shape, and may have a curved surface, a surface having a certain degree of unevenness or steps, but if there is no problem with the aluminum nano-columnar structure, There is no particular limitation.
[0107]
As a film formation method for forming a substance in a non-equilibrium state, a sputtering method is preferable, but a vapor deposition method (resistance heating evaporation, electron beam evaporation, or the like), an ion plating method, or any other non-equilibrium state for forming a substance is used. The membrane method is applicable.
[0108]
As a method of film formation, a simultaneous film formation process of simultaneously forming silicon, germanium, and aluminum may be used, or a stacked film formation process of stacking several atomic layers of silicon, germanium, and aluminum may be used. Absent.
[0109]
(Embodiment 7: Apparatus using aluminum silicon germanium mixture)
FIG. 9 shows a schematic diagram of a single-electron memory using an aluminum silicon germanium mixture.
[0110]
91 is a substrate, 92 is an insulator (for example, silicon oxide), 93 is a structure in which columnar aluminum is dispersed in a mixture of silicon and germanium (aluminum silicon germanium mixture), 94 is a drain region, 95 is a gate insulating region, Reference numeral 96 denotes a gate electrode, and 97 denotes a source region.
[0111]
By using aluminum as the quantum dots as shown in FIG. 9, the electrical characteristics of the channel portion can be controlled by the influence of the electric charge accumulated in the quantum dots. In addition, since charges can be accumulated in the quantum dots for a long time, a nonvolatile memory in which information is not lost even when the power is turned off can be formed. In the description, an aluminum silicon germanium structure is used. However, if a structure in which columnar members are dispersed can be obtained, another material (for example, aluminum silicon instead of aluminum silicon germanium) may be used. it can.
[0112]
By applying the aluminum silicon germanium structure in this manner, it can be used as a single-electron memory using a quantum effect or a single-electron transistor using a similar principle.
[0113]
Further, the present invention enables the application of aluminum nano-columnar structures such as quantum dots and quantum wires in various forms, and significantly expands the application range.
[0114]
(Example 1: First material Al, second material Si)
FIG. 3 shows a schematic view of the aluminum silicon structure of the present invention. Here, an aluminum thin line having a columnar structure in which an aluminum structure portion is surrounded by silicon, a diameter 2r thereof is 3 nm, an interval 2R is 7 nm, and a length L is 200 nm is shown. In FIG. 3, 21 is a substrate, 22 is an aluminum quantum wire, and 23 is silicon. FIG. 6 shows an actual SEM photograph.
[0115]
First, a method for manufacturing an aluminum thin wire will be described.
[0116]
An aluminum-silicon mixed film containing silicon at 55 atomic% with respect to the total amount of aluminum and silicon is formed to a thickness of about 200 nm on the glass substrate 21 by RF magnetron sputtering. As shown in FIG. 2, a target in which eight 15 mm square silicon chips 13 were placed on a 4 inch aluminum target was used. The sputtering conditions were as follows: Ar flow rate: 50 sccm, discharge pressure: 0.7 Pa, and input power: 1 kW using an RF power source. The substrate temperature was room temperature.
[0117]
Here, the target 12 used was one in which eight silicon chips 13 were placed on an aluminum target. However, the number of silicon chips is not limited to this, and changes according to sputtering conditions. Should be about 55 atomic%. The target is not limited to a silicon chip placed on an aluminum target, but may be an aluminum chip placed on a silicon target or a target obtained by sintering silicon and aluminum powder. .
[0118]
Next, the aluminum-silicon mixed film thus obtained was analyzed by ICP (inductively coupled plasma emission spectrometry) for the amount (atomic%) of silicon with respect to the total amount of aluminum and silicon. As a result, the amount of silicon with respect to the total amount of aluminum and silicon was about 55 atomic%. Here, for the sake of measurement, an aluminum silicon mixed film deposited on a carbon substrate was used as the substrate.
[0119]
The aluminum silicon mixed film was observed by FE-SEM (field emission scanning electron microscope). As shown in FIG. 3, the shape of the surface viewed from directly above the substrate was such that circular aluminum nanostructures surrounded by silicon were two-dimensionally arranged. The pore diameter of the aluminum nanostructure portion was 3 nm, and the average center-to-center spacing was 7 nm. When the cross section was observed by FE-SEM, the height was 200 nm, and the respective aluminum nanostructure portions were independent of each other.
[0120]
Further, when this sample was observed by an X-ray diffraction method, no silicon peak showing crystallinity could be confirmed, and silicon was amorphous. Note that a plurality of peaks indicating the crystallinity of aluminum could be confirmed, indicating that at least part of the aluminum was polycrystalline.
[0121]
Therefore, an aluminum silicon nanostructure including a thin aluminum wire with a spacing 2R of 7 nm, a diameter 2r of 3 nm, and a height L of 200 nm surrounded by silicon could be produced.
[0122]
As described in this embodiment, by forming an aluminum-silicon mixed film by a film forming method for forming a substance in a non-equilibrium state such as a sputtering method, aluminum quantum dots of several nm scale are formed in a silicon matrix on a substrate surface. Alternatively, an aluminum silicon nanostructure having an aluminum nanostructure such as an aluminum quantum wire can be formed.
[0123]
(Comparative example)
Further, as a comparative sample A, an aluminum-silicon mixed film containing silicon and 15 atomic% with respect to the total amount of aluminum and silicon was formed to a thickness of about 200 nm on a glass substrate by a sputtering method. The target used was one in which two 15-mm square silicon chips 13 were placed on a 4-inch aluminum target. The sputtering conditions were as follows: Ar flow rate: 50 sccm, discharge pressure: 0.7 Pa, and input power: 1 kW using an RF power source. The substrate temperature was room temperature.
[0124]
Comparative sample A was observed by FE-SEM (field emission scanning electron microscope) (see FIG. 7). The shape of the surface viewed from directly above the substrate was such that the aluminum portion was not circular, but a shape in which aluminum was continuously connected. That is, the aluminum columnar structure was not a microstructure uniformly dispersed in the silicon region. Furthermore, its size was well over 10 nm. Also, when the cross section was observed by FE-SEM, the width of the aluminum portion exceeded 15 nm. The aluminum-silicon mixed film thus obtained was analyzed by ICP (inductively coupled plasma emission spectrometry) for the amount (atomic%) of silicon with respect to the total amount of aluminum and silicon. As a result, the amount of silicon with respect to the total amount of aluminum and silicon was about 15 atomic%.
[0125]
Further, as a comparative sample B, an aluminum-silicon mixed film containing silicon at 75 atomic% with respect to the total amount of aluminum and silicon was formed to a thickness of about 200 nm on a glass substrate by a sputtering method. The target used was a 14-inch aluminum target with 14 silicon chips 13 of 15 mm square. The sputtering conditions were as follows: Ar flow rate: 50 sccm, discharge pressure: 0.7 Pa, and input power: 1 kW using an RF power source. The substrate temperature was room temperature.
[0126]
Comparative sample B was observed with an FE-SEM (field emission scanning electron microscope) (see FIG. 8). No aluminum portion could be observed on the sample surface as viewed from directly above the substrate. Further, even when the cross section was observed with the FE-SEM, the aluminum portion could not be clearly observed. The aluminum-silicon mixed film thus obtained was analyzed by ICP (inductively coupled plasma emission spectrometry) for the amount (atomic%) of silicon with respect to the total amount of aluminum and silicon. As a result, the amount of silicon with respect to the total amount of aluminum and silicon was about 75 atomic%.
[0127]
Further, only the condition of the number of silicon chips was changed from that of the comparative sample A, and the ratio of silicon to the total amount of the aluminum-silicon mixture was 20 atomic%, 35 atomic%, 50 atomic%, 60 atomic%, and 70 atomic%. Was prepared. The case where the columnar structure of aluminum is a fine structure dispersed in the silicon region is indicated by ○, and the case where it is not formed is indicated by ×. From the viewpoint of the uniformity of the columnar structure, the proportion of silicon is preferably 30 or more and 60 atomic%. In addition, when the proportion of silicon was 65 or 70 atomic%, the crystallinity of aluminum was low, and it was close to the amorphous state.
[0128]
[Table 1]

[0129]
As described above, by adjusting the silicon content with respect to the total amount of aluminum and silicon to 20 atomic% or more and 70 atomic% or less, a structure in which aluminum columnar structures are dispersed in the silicon region can be realized. By changing the composition of aluminum and silicon, it is possible to control the pore diameter of the columnar structure, and it is possible to produce an aluminum thin wire having excellent linearity. In order to confirm the structure, it is preferable to use a TEM (transmission electron microscope) or the like in addition to the SEM.
[0130]
Further, as a comparative sample C, an aluminum-silicon mixed film containing silicon at 55 atomic% with respect to the total amount of aluminum and silicon was formed to a thickness of about 200 nm on a glass substrate by a sputtering method. The target used was one in which eight 15 mm square silicon chips 13 were placed on a 4-inch aluminum target. The sputtering conditions were as follows: Ar flow rate: 50 sccm, discharge pressure: 0.7 Pa, and input power: 1 kW using an RF power source. The substrate temperature was set to 350 ° C.
[0131]
Comparative sample C was observed with an FE-SEM (field emission scanning electron microscope). A large aluminum lump was confirmed on the sample surface as viewed from directly above the substrate. X-ray diffraction measurement confirmed that silicon was crystallized. That is, an aluminum nanostructure having a columnar structure could not be confirmed, and the silicon region was not amorphous but crystallized. That is, if the substrate temperature is too high, the state changes to a more stable state, and it is considered that the film growth for forming such an aluminum nanostructure has not been performed.
[0132]
In addition, in order to obtain a structure in which the columnar members are dispersed, it is also a preferable embodiment to set the composition of the target to Al: Si = 55: 45.
[0133]
(Example 2)
FIG. 4 shows a schematic view of the aluminum silicon nanostructure of the present invention. Here, a case is shown in which the aluminum nanostructure portion surrounded by silicon has a columnar structure, and is an aluminum quantum dot having a diameter 2r of 6 nm, an interval 2R of 9 nm, and a length L of 10 nm. In FIG. 4, 31 is a substrate, 32 is an aluminum quantum dot, and 33 is silicon. First, a method for manufacturing an aluminum silicon nanostructure in which the aluminum nanostructure portion is an aluminum quantum dot will be described. An aluminum-silicon mixed film containing silicon at 30 atomic% with respect to the total amount of aluminum and silicon is formed to a thickness of about 10 nm on a silicon substrate by using an electron beam evaporation method which is a physical evaporation method. Here, two types of crucibles, a silicon crucible and an aluminum crucible, are simultaneously subjected to electron beam evaporation.
[0134]
Next, the aluminum-silicon mixed film thus obtained was analyzed by ICP (inductively coupled plasma emission spectrometry) for the amount (atomic%) of silicon with respect to the total amount of aluminum and silicon. As a result, the amount of silicon with respect to the total amount of aluminum and silicon was about 30 atomic%. Here, for the sake of measurement, an aluminum silicon mixed film deposited on a carbon substrate was used as the substrate.
[0135]
The prepared sample was observed by FE-SEM (field emission scanning electron microscope). As shown in FIG. 4, the surface shape of the surface viewed from directly above the substrate was such that circular aluminum quantum dots surrounded by silicon were two-dimensionally arranged. The pore diameter 2r of the aluminum nanostructure portion (aluminum quantum dots) was 6 nm, and the average center-to-center spacing 2R was 9 nm. When the cross section was observed by FE-SEM, the height was 10 nm, and the aluminum quantum dots were independent of each other.
[0136]
An aluminum silicon nanostructure having aluminum quantum dots surrounded by silicon with an interval 2R of 9 nm, a diameter 2r of 6 nm, and a height L of 10 nm could be produced. When this sample was observed by X-ray diffraction, aluminum was crystalline and silicon was amorphous.
[0137]
(Example 3)
Referring again to FIG. 3, a case where aluminum is used as the first material and silicon and germanium are used as the second material will be described. FIG. 3 is a schematic diagram of an aluminum silicon germanium mixture. Here, an aluminum nanostructure portion surrounded by silicon germanium has a columnar structure with a diameter 2r of 7 nm, an interval 2R of 10 nm, and a length L of 200 nm is shown. In FIG. 3, reference numeral 21 denotes a substrate, 22 denotes an aluminum quantum wire (a columnar structure including aluminum), and 23 denotes amorphous silicon germanium. FIG. 10 shows an actual SEM photograph.
[0138]
First, a method for manufacturing an aluminum thin wire will be described.
[0139]
An aluminum-silicon-germanium mixed film containing 38 atomic% of the total amount of silicon and germanium with respect to the total amount of aluminum, silicon and germanium is formed on the glass substrate 21 by RF magnetron sputtering. As shown in FIG. 2, a target in which two 15 mm square silicon chips and two germanium chips were placed on a 4-inch aluminum target was used. The sputtering conditions were as follows: Ar flow rate: 50 sccm, discharge pressure: 0.7 Pa, and input power: 300 W using an RF power source. The substrate temperature was room temperature.
[0140]
In this case, the target 12 used was a target in which a total of four silicon and germanium chips 13 were placed on an aluminum target. However, the number of silicon and germanium chips is not limited to this, and may vary depending on sputtering conditions. The total composition ratio of silicon and germanium with respect to the total amount of aluminum, silicon and germanium should be about 38 atomic%. The target is not limited to the silicon target and the silicon target on the aluminum target, but may be the silicon target and the silicon target and the silicon target on the silicon target. A target that has been set may be used.
[0141]
Furthermore, although the RF sputtering method is used here as the sputtering method, the present invention is not limited to this, and may be an ECR sputtering method, a DC sputtering method, or an ion beam sputtering method. Furthermore, sputtering conditions depend on the apparatus, and are not limited to these.
[0142]
Next, the aluminum-silicon-germanium mixed film thus obtained was analyzed by ICP (inductively coupled plasma emission spectrometry) for the amount (atomic%) based on the total amount of silicon, germanium and aluminum. As a result, the total amount of silicon and germanium (total composition ratio) was about 38 atomic% with respect to the total amount of aluminum, silicon, and germanium.
[0143]
Here, for the sake of measurement, an aluminum silicon germanium mixed film deposited on a carbon substrate was used as the substrate.
[0144]
The aluminum-silicon-germanium mixed film was observed with an FE-SEM (field emission scanning electron microscope). As shown in FIG. 3, the surface of the substrate viewed obliquely right above the substrate had a two-dimensional array of substantially circular aluminum nanopillars surrounded by a mixture of silicon and germanium. The pore diameter of the aluminum nanostructure portion determined by image processing was 7 nm, and the average center-to-center spacing was 10 nm. In addition, when the cross section was observed by FE-SEM, the height of the film was 200 nm, and the aluminum nano-columnar structure portions were independent of each other.
[0145]
Further, when this sample was observed by an X-ray diffraction method, peaks of silicon and germanium showing crystallinity could not be confirmed, and the mixture of silicon and germanium was amorphous. Note that a plurality of aluminum peaks were confirmed, and it was found that the sample was polycrystalline.
[0146]
Therefore, an aluminum-silicon-germanium mixture including a thin aluminum wire having a distance 2R of 10 nm, a diameter 2r of 7 nm, and a height L of 200 nm surrounded by the silicon-germanium mixture could be produced.
[0147]
As described in this embodiment, by forming an aluminum-silicon-germanium mixed film by a film forming method for forming a substance in a non-equilibrium state such as a sputtering method, aluminum on a substrate surface of several to several tens nm scale is formed. It is possible to form an aluminum-silicon-germanium mixture having a structure in which aluminum nano-columnar structures such as quantum dots or aluminum quantum wires are two-dimensionally formed in silicon germanium.
[0148]
(Comparative example)
As a comparative sample D, an aluminum-silicon-germanium mixed film containing silicon and germanium at 15 atomic% with respect to the total amount of aluminum, silicon and germanium was formed on a glass substrate by sputtering. As a target, a 15-inch square silicon chip and a germanium chip each placed on a 4-inch aluminum target were used. The sputtering conditions were as follows: Ar flow rate: 50 sccm, discharge pressure: 0.7 Pa, and input power: 300 W using an RF power source. The substrate temperature was room temperature.
[0149]
Comparative sample D was observed by FE-SEM (field emission scanning electron microscope). As for the shape of the surface viewed from directly above the substrate, the aluminum portion was not circular, and each aluminum portion formed a structure that was continuously connected. That is, the aluminum columnar structure was not a microstructure dispersed in the silicon germanium region. Furthermore, its size (length) was far over 20 nm. Further, when the cross section was observed by FE-SEM, the width of the aluminum portion was not columnar, and a large lump exceeding several tens of nm was formed. The aluminum-silicon-germanium mixed film thus obtained was analyzed by ICP (inductively coupled plasma emission spectrometry) for the amount (atomic%) of silicon and germanium with respect to the total amount of aluminum, silicon and germanium. As a result, the total amount of silicon and germanium was about 15 atomic% with respect to the total amount of aluminum, silicon and germanium (assumed to be 100 atomic%).
[0150]
Further, as a comparative sample E, an aluminum-silicon-germanium mixed film containing silicon-germanium at 75 atomic% with respect to the total amount of aluminum and silicon-germanium was formed on a glass substrate by sputtering at a thickness of about 200 nm. The target used was a four-inch aluminum target with five 15 mm square silicon and germanium chips each. The sputtering conditions were as follows: Ar flow rate: 50 sccm, discharge pressure: 0.7 Pa, and input power: 300 W using an RF power source. The substrate temperature was room temperature.
[0151]
Comparative sample E was observed by FE-SEM (field emission scanning electron microscope). No aluminum portion could be observed on the sample surface as viewed from directly above the substrate. Further, even when the cross section was observed by FE-SEM, a clear aluminum portion could not be observed. The aluminum-silicon-germanium mixed film thus obtained was analyzed by ICP (inductively coupled plasma emission spectrometry) for the amount (atomic%) of silicon and germanium with respect to the total amount of aluminum, silicon and germanium. As a result, the total amount of silicon and germanium was about 75 atomic% with respect to the total amount of aluminum, silicon and germanium (assumed to be 100 atomic%).
[0152]
As described above, by adjusting the content of silicon and germanium with respect to the total amount of aluminum, silicon, and germanium to at least 20 atomic% or more and 70 atomic% or less, it is possible to form a nanocolumnar structure of aluminum in silicon germanium. In addition, it becomes possible to produce an aluminum fine wire having excellent linearity.
[0153]
Further, as a comparative sample F, an aluminum-silicon mixed film containing 38 atomic% of the total amount of silicon and germanium with respect to the total amount of aluminum, silicon and germanium was formed on a glass substrate by a sputtering method to a thickness of about 200 nm. The target used was a 4-inch aluminum target with two 15 mm square silicon chips and two germanium chips. The sputtering conditions were as follows: Ar flow rate: 50 sccm, discharge pressure: 0.7 Pa, and input power: 300 W using an RF power source. The substrate temperature was set to 350 ° C.
[0154]
Comparative sample F was observed with an FE-SEM (field emission scanning electron microscope). No circular or elliptical aluminum could be observed on the sample surface viewed from directly above the substrate. That is, the nano-columnar structure of aluminum could not be confirmed. That is, if the substrate temperature is too high, the state changes to a more stable state, and it is considered that the film growth for forming the aluminum nano-columnar structure shown in FIGS. 1 and 3 has not been performed.
[0155]
(Example 4)
Referring to FIG. 4 again, the aluminum silicon germanium mixture will be described. Here, a case is described in which the aluminum nanostructure portion surrounded by silicon germanium has a columnar structure, and is an aluminum quantum dot having a diameter 2r of 6 nm, an interval 2R of 8 nm, and a length L of 10 nm. In FIG. 4, reference numeral 31 denotes a substrate, 32 denotes aluminum quantum dots, and 33 denotes amorphous silicon germanium. First, a method for producing an aluminum silicon germanium mixture in which the aluminum nanopillar structure portion is an aluminum quantum dot will be described. An aluminum-silicon-germanium mixed film containing silicon and germanium in an amount of 33 atomic% with respect to the total amount of aluminum, silicon, and germanium is formed on a silicon substrate by magnetron sputtering.
[0156]
Next, the aluminum-silicon-germanium mixed film thus obtained was analyzed by ICP (inductively coupled plasma emission spectrometry) for the amount (atomic%) of silicon and germanium with respect to the total amount of aluminum, silicon and germanium. As a result, the amount of silicon and germanium relative to the total amount of aluminum, silicon and germanium was about 33 atomic%. Here, for the sake of measurement, an aluminum silicon germanium mixed film deposited on a carbon substrate was used as the substrate.
[0157]
The prepared sample was observed by FE-SEM (field emission scanning electron microscope). As shown in FIG. 4, the surface shape of the substrate viewed obliquely right above the substrate was such that circular aluminum quantum dots surrounded by silicon germanium were two-dimensionally arranged. The pore diameter 2r of the aluminum nanostructure portion (aluminum quantum dot) was 6 nm, and the average center-to-center spacing 2R was 8 nm. When the cross section was observed by FE-SEM, the height was 10 nm, and the aluminum quantum dots were independent of each other.
[0158]
As a result, an aluminum-silicon-germanium mixture having aluminum quantum dots surrounded by silicon-germanium and having an interval 2R of 8 nm, a diameter 2r of 6 nm, and a height L of 10 nm was obtained. In addition, when this sample was observed by the X-ray diffraction method, aluminum was crystalline and silicon germanium was amorphous.
[0159]
By changing the silicon and germanium content relative to the total amount of aluminum, silicon and germanium, it is possible to change the diameter and spacing of the aluminum nanopillars in silicon germanium (typically silicon and germanium). When the amount of germanium is reduced, the diameter of the aluminum nano-columnar structure increases, and the height of the aluminum nano-columnar structure can be changed by adjusting the film thickness of the aluminum-silicon-germanium mixture.
[0160]
Further, by changing the composition ratio of germanium and silicon in the aluminum-silicon-germanium mixture, it is possible to change the diameter and interval of the aluminum columnar structure.
[0161]
【The invention's effect】
As described above, according to the present invention, it is possible to provide a structure in which columnar members are dispersed in a region surrounding the columnar member, a method of manufacturing the same, and an apparatus using the structure.
[Brief description of the drawings]
FIG. 1A is a schematic view of an example of a structure according to the present invention as viewed from above.
(B) is the schematic which looked at an example of the structure which concerns on this invention from the side surface.
FIG. 2 is a diagram illustrating an example of a method for manufacturing a structure according to the present invention.
FIG. 3 is a diagram showing an example of a structure according to the present invention.
FIG. 4 is a diagram showing an example of a structure according to the present invention.
FIG. 5 is a schematic view of a single-electron memory using a structure according to the present invention.
FIG. 6 is an FE-SEM image of the aluminum silicon mixture according to the present invention.
FIG. 7 is an FE-SEM image of the aluminum silicon mixture according to the present invention.
FIG. 8 is an FE-SEM image of the aluminum silicon mixture according to the present invention.
FIG. 9 is a schematic view of a single-electron memory using a structure according to the present invention.
FIG. 10 is an FE-SEM image of the mixture according to the present invention.
[Explanation of symbols]
1,11 pillar structure
2,23,33 Area surrounding columnar structure
3, 21, 31, 51 substrate
12 Target
13. Silicon chip or germanium chip
22 Column structure
32 pillar structure
52 Insulator
53 Aluminum Silicon Mixture
54 drain electrode
55 Gate insulator
56 Gate electrode
57 source electrode

Claims (40)

A structure including and configured with a first material and a second material, wherein the columnar member including and configured with the first material includes a second material (where the second material is only Ge). ), And the structure contains the second material in an amount of 20 atomic% or more and 70 atomic% based on the total amount of the first material and the second material. % Of the structure. The structure of claim 1, wherein said first material is aluminum. 3. The structure according to claim 1, wherein the second material is silicon or a mixture of silicon and germanium. The structure according to claim 1, wherein the structure includes the second material in a ratio of 30 atomic% to 60 atomic% with respect to the total amount of the first material and the second material. The structure according to claim 1, wherein the columnar member has an average diameter of 50 nm or less. The structure according to claim 1, wherein a distance between centers of the columnar members included in the structure is 30 nm or less. A device using the structure according to claim 1. A step of preparing a substrate, and forming a film on the substrate in a non-equilibrium state, including a columnar member including the first material, and a second material (a case where the second material is only Ge). And forming a structure having a region surrounding the columnar member, wherein the second material is added to the structure in a total amount of the first material and the second material. A method for manufacturing a structure, characterized in that the structure is formed so as to be contained at a ratio of 20 atomic% to 70 atomic%. A film-like aluminum-silicon mixture, which has a columnar structure including aluminum and a silicon region surrounding the columnar structure, and the mixture contains silicon in a ratio of 20 atomic% to 70 atomic%. An aluminum-silicon mixture, characterized in that it is contained. The aluminum-silicon mixture according to claim 9, wherein the proportion of silicon in the mixture is 25 atomic% or more and 65 atomic% or less. The aluminum-silicon mixture according to claim 9, wherein the proportion of silicon in the mixture is from 30 atomic% to 60 atomic%. The aluminum-silicon mixture according to any one of claims 9 to 11, wherein the diameter of the columnar structure is 0.5 nm or more and 50 nm or less. The aluminum-silicon mixture according to claim 12, wherein the diameter of the columnar structure is 0.5 nm or more and 10 nm or less. The aluminum-silicon mixture according to any one of claims 9 to 11, wherein a distance between centers of the columnar structures is 30 nm or less. The aluminum-silicon mixture according to claim 14, wherein a distance between centers of the columnar structures is 15 nm or less. The aluminum-silicon mixture according to any one of claims 9 to 15, wherein the silicon region contains amorphous silicon as a main component. 17. The aluminum silicon mixture of claim 16, wherein said mixture is formed on an insulator. An electronic device using the aluminum silicon mixture according to claim 9. A method for manufacturing an aluminum-silicon mixture, wherein the mixture is formed on a substrate by a film formation method in a non-equilibrium state. A method for producing a film-shaped aluminum-silicon mixture, comprising a step of preparing a substrate and a step of forming a film on the substrate in a non-equilibrium state, wherein the formed film includes aluminum and is a columnar structure. And a silicon region surrounding the columnar structure, wherein the mixture contains silicon at a ratio of 20 atomic% or more and 70 atomic% or less. Production method. 21. The method according to claim 20, wherein the film forming method for forming a substance in a non-equilibrium state is a sputtering method. 22. The method for manufacturing an aluminum-silicon mixture according to claim 21, wherein the sputtering is performed using a target material in which aluminum and silicon are separated. 21. The substrate temperature when forming an aluminum-silicon mixed film containing silicon in a ratio of 20 to 70 atomic% with respect to the total amount of aluminum and silicon by the sputtering method is 300 ° C. or less. 3. The method for producing an aluminum-silicon mixture according to item 1. A film-like aluminum-silicon-germanium mixture, comprising a columnar structure comprising aluminum and a silicon-germanium region surrounding the columnar structure, wherein the total amount of silicon and germanium in the mixture is at least 20 atomic%. An aluminum-silicon-germanium mixture, characterized in that it is contained in a proportion of 70 atomic% or less. The aluminum silicon germanium mixture according to claim 24, wherein a total ratio of silicon and germanium in the mixture is 25 atomic% or more and 65 atomic% or less. The aluminum silicon germanium mixture according to claim 24, wherein a total ratio of silicon and germanium in the mixture is 30 atomic% or more and 60 atomic% or less. 28. The aluminum silicon germanium mixture according to claim 24, wherein the diameter of the columnar structure is 0.5 nm or more and 30 nm or less. The aluminum silicon germanium mixture according to claim 27, wherein the diameter of the columnar structure is 0.5 nm or more and 15 nm or less. The aluminum silicon germanium mixture according to any one of claims 24 to 28, wherein an interval between centers of the columnar structures is 30 nm or less. 30. The aluminum silicon germanium mixture according to claim 29, wherein a distance between centers of the columnar structures is 20 nm or less. 31. The aluminum-silicon-germanium mixture according to claim 24, wherein the silicon-germanium region mainly includes amorphous silicon-germanium. Any proportion of composition of the silicon (Si) and germanium (Ge) of the silicon germanium regions when the _{Si x Ge 1-x, 0} <x < claims 24, characterized in that the first range 31 An aluminum-silicon-germanium mixture according to any one of the above. 25. The aluminum silicon germanium mixture of claim 24, wherein said mixture is formed on an insulator. An electronic device using the aluminum silicon germanium mixture according to claim 24. 25. A method for producing an aluminum silicon germanium mixture, wherein the mixture according to claim 24 is produced on a substrate by a non-equilibrium film formation method. A method for producing a film-like aluminum-silicon-germanium mixture, comprising a step of preparing a substrate and a step of forming a film on the substrate in a non-equilibrium state, wherein the formed film comprises aluminum and has a columnar structure An aluminum-silicon-germanium mixture having a body and a silicon-germanium region surrounding the columnar structure, wherein the mixture contains a total amount of silicon and germanium at a ratio of 20 atomic% to 70 atomic%. A method for producing an aluminum silicon germanium mixture as a feature. The method for manufacturing an aluminum silicon germanium mixture according to claim 36, wherein the film forming method for forming a substance in a non-equilibrium state is a sputtering method. When the sputtering method is used to form an aluminum-silicon-germanium mixed film containing the total amount of silicon and germanium at a ratio of 20 to 70 atomic% with respect to the total amount of aluminum, silicon and germanium, the substrate temperature is at least 300 ° C or less. The method for producing an aluminum silicon germanium mixture according to claim 14, wherein: A structure comprising a plurality of columnar members, a region surrounding side surfaces of the plurality of columnar members, wherein the columnar members have a diameter of less than 20 nm, and a center between the plurality of columnar members. A structure having an inter-distance of 30 nm or less. A structure, wherein a columnar member including aluminum and a region surrounding the columnar member are formed at the same time, and the columnar member has a diameter of less than 20 nm.

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