JP3958349B2 - Method for manufacturing semiconductor device - Google Patents

Description

The present invention relates to a thin film semiconductor device such as a thin film transistor having excellent reliability and mass productivity and high yield, and a method for manufacturing the same. As an application field of the present invention, for example, a driving circuit such as a liquid crystal display or a thin film image sensor, or a three-dimensional integrated circuit is constituted.

Conventionally, a semiconductor integrated circuit has been mainly a monolithic type formed on a semiconductor substrate such as silicon. However, in recent years, attempts have been made to form it on an insulating substrate such as glass or sapphire. The reason is that the parasitic capacitance between the substrate and the wiring is reduced and the operation speed is improved.
In particular, quartz and other glass materials are not limited in size as silicon wafers, are inexpensive, can be easily separated from each other, and have a latch-up phenomenon that causes problems especially in CMOS monolithic integrated circuits. This is because it does not happen. In addition to the above reasons, in a liquid crystal display or a contact type image sensor, a thin film transistor (T) is formed on a transparent substrate because a semiconductor element and a liquid crystal element or a light detection element need to be integrated.
FT) and the like need to be formed.

For these reasons, a thin film semiconductor element has been formed on an insulating substrate. As an example of a conventional thin film semiconductor element, a TFT is shown in FIG. As shown in the drawing, a film 503 made of silicon oxide or the like is formed as a passivation film on an insulating substrate 501, and a TFT is formed on the insulating film 501 independently of other TFTs. TFT is a monolithic integrated circuit MO
Similar to the SFET, a source (drain) region 507 and a drain (source) region 509, a channel formation region (also simply referred to as a channel region) 508 sandwiched between them, and the gate insulating film 5
04, gate electrode 510, and source (drain) electrode 511 and drain (source)
An electrode 512 is provided. Further, an interlayer insulator 506 such as PSG is provided so that multilayer wiring is possible.

The example of FIG. 5 is called a forward coplanar type, but there are other types of TFTs called reverse coplanar type, forward stagger type, and reverse stagger type depending on the arrangement of the gate electrode and the channel region. However, the details are left to other literature and will not be discussed further here.

Even in monolithic integrated circuits, contamination with alkali ions such as sodium and potassium, or transition metal ions such as iron, copper, and nickel is a serious problem, and great care must be taken to prevent the intrusion of these ions. I have been. Even in TFT, the problem of these ions is equally serious, and attention is paid to cleaning the production process so as to avoid contamination as much as possible. In addition, measures are taken to prevent these elements from being contaminated.

The difference between thin film semiconductor elements and monolithic integrated circuits is that the concentration of contaminating ions in the substrate is relatively high. In other words, single crystal silicon used in monolithic integrated circuits has been produced so as to eliminate these harmful pollutant elements with the accumulation of technology over many years. Is 10 ¹⁰ cm ⁻³ or less.

However, in general, the contamination element concentration of the insulating substrate for thin film semiconductor elements is not low. Of course, in the case of a single crystal substrate such as a spinel substrate or a sapphire substrate, it is theoretically possible to reduce the concentration of the foreign element that becomes the contamination source, but it is not realistic from the profit side. Also,
Quartz substrates can ideally stop foreign elements from entering if they are produced by gas phase reaction using high-purity silane gas and oxygen as raw materials. However, because the structure is amorphous, the foreign elements are once taken in. If this happens, it is difficult to exhale this. In addition, the substrate used for the liquid crystal display is given priority to cost issues, so it is necessary to use a low-priced substrate. Contains. Some of these foreign elements themselves are undesirable for semiconductor elements,
In the process of adding these different elements, they may be mixed from the outside or included as impurities in the additive material.

For example, TN glass is an inexpensive glass substrate, has good heat resistance, and has a thermal expansion coefficient close to that of silicon. Therefore, TN glass is preferable as a substrate for a liquid crystal display, but contains about 5% of lithium. A part of this lithium is ionized and penetrates into the semiconductor element as mobile ions, resulting in deterioration of the element. Further, it is difficult to produce a lithium having a purity of 99% or higher, and usually contains about 0.7% sodium. Sodium ionization rate is 1
The sodium ion is extremely large at about 0%, and this sodium ion has a very serious influence on the characteristics of the device.

In the conventional thin film semiconductor element, as shown in FIG.
It has been dealt with by gettering these mobile ions by using silicon oxide or the like as a passivation film and using PSG or BPSG as an interlayer insulator.
However, it has been difficult to sufficiently prevent contamination by these methods. It is an object of the present invention to suppress the deterioration of the element due to the entry of these contaminating elements / ions.

In the present invention, a film (blocking film) having a blocking action against mobile ions such as silicon nitride, aluminum oxide, and tantalum oxide is formed on the lower and upper parts of the thin film semiconductor element in order to suppress the contamination as described above. It is characterized by that.

According to the present invention, a thin film semiconductor element such as a TFT having little influence of mobile ions such as sodium can be manufactured. Conventionally, it has become possible to form TFTs even on substrates on which elements could not be formed due to the presence of mobile ions. In order to carry out the present invention, a coplanar type as shown in FIGS. 1 to 4, or a reverse coplanar type, a stagger type, or a reverse stagger type T
FT may be used. In addition, since the present invention does not limit the operation of the thin film semiconductor device, the silicon of the transistor may be amorphous, polycrystalline, microcrystalline, or an intermediate state thereof. Obviously, it may be a single crystal or even a single crystal.

A typical example of the present invention is shown in FIG. FIG. 1 shows a TFT using the present invention. That is, a first silicon nitride film is formed as the first blocking film 102 on the insulating substrate 101. The first silicon nitride film has an effect of preventing contamination from the substrate. And
On the first silicon nitride film, for example, a film 103 having good adhesion to a silicon material such as silicon oxide.
Form. When the semiconductor film is formed directly on the first silicon nitride without forming the film 103 and a TFT is manufactured, the channel region becomes conductive by the trap level generated at the interface between the silicon nitride and the semiconductor material, and the TFT Will not work. Therefore, it is important to provide such a buffer.

A TFT is formed on the film 103. The TFT includes a source (drain) region 107 and a drain (source) region 109, a channel region 108 sandwiched between them, and a gate insulating film 10.
4. A gate electrode 110 is provided. Each of the source, drain, and channel regions of the TFT is formed of a monocrystalline, polycrystalline, or amorphous semiconductor material. As a semiconductor material,
For example, silicon, germanium, silicon carbide, and alloys thereof can be used.

Then, a second silicon nitride film is formed as the second blocking film 105 so as to cover the TFT. Here, it is a feature of the present invention that the second silicon nitride film is formed after the fabrication of the TFT and before the electrodes are formed on the source and / or the drain. In the conventional technique, a silicon nitride film as a final passivation film is formed after electrode formation, but the present invention has a different purpose from the silicon nitride film formed in that sense.
That is, the second silicon nitride film in the present invention is formed to enclose the TFT together with the first silicon nitride film, and is intended to prevent contamination in the electrode forming process after the TFT formation. To do. Therefore, a silicon nitride film may be formed as a final passivation film as in the prior art after forming a TFT and its associated electrodes and wirings according to the present invention.

After the second silicon nitride film is formed, the interlayer insulating film 106 is formed by using an interlayer back insulating material such as PSG, and the source (drain) electrode 111 and the drain (source) electrode 112 are formed.

In the example of FIG. 1, however, the gate insulating film extends far away, and the TFT extends from the end.
There is a possibility of entering inside. An improvement of this is the example shown in FIG. 2, and since the gate insulating film is only on the TFT, there is no problem as shown in FIG. However, in this case, since the source region and the drain region adjacent to the channel region are in contact with the silicon nitride film, the silicon nitride in this portion is polarized by the gate voltage or traps electrons, and T
May interfere with FT operation.

An example of overcoming that problem is shown in FIG. Here, the source region and the drain region adjacent to the channel region are not adjacent to the silicon nitride film. Therefore, the difficulties of silicon nitride polarization and electron traps are solved. However, when a self-alignment process using a gate electrode as a mask is adopted for forming the source and drain regions, in this example, as in the example of FIG. 1, an acceptor or donor element must be implanted through the gate insulating film. Therefore, if the ion implantation method is adopted, it is necessary to increase the acceleration energy of ions. At this time, as a result of fast ion implantation, the source and drain regions may be expanded by the secondary scattering.

In FIG. 2, 201 is an insulating substrate, 202 is a first silicon nitride film, 203 is a buffer insulating film such as silicon oxide, 204 is a gate insulating film, 205 is a second silicon nitride film, and 206 is an interlayer insulating film. , 207 are source (drain) regions, 208 is a channel region, 209 is a drain (source) region, 210 is a gate electrode, 211 is a source (drain) electrode, and 212 is a drain (source).
Source) electrode. 3, 301 is an insulating substrate, 302 is a first silicon nitride film, 303 is a buffer insulating film such as silicon oxide, 304 is a gate insulating film, 305 is a second silicon nitride film, and 306 is an interlayer. Insulating film, 307 is a source (drain) region, 308 is a channel region, 309 is a drain (source) region, 310 is a gate electrode, 311 is a source (drain)
An electrode 312 is a drain (source) electrode.

In the present invention, when a silicon nitride film is used as the blocking film, the chemical formula is SiN.
When expressed in _{x, x} = 1.0 _x = 1.7 is suitable from, in particular, from x = 1.3 x = 1.35
Good results were obtained with a stoichiometric composition (x = 1.33) or close to it. Therefore, in the present invention, it is better to form silicon nitride by the low pressure CVD method. However, even a silicon nitride film formed by plasma CVD or photo-CVD method,
Needless to say, the reliability of the device is improved as compared with the case where the present invention is not used.

If a silicon nitride film is to be formed by the low pressure CVD method, dichlorosilane (SiCl ₂ H ₂ ) and ammonia (NH ₃ ) are used as source gases, and the pressure is 10 to 1000 Pa.
What is necessary is just to make it react at 00-800 degreeC, Preferably it is 550-750 degreeC. Of course, silane (
SiH ₄ ) or tetrachlorosilane (SiCl ₄ ) may be used.

Furthermore, as described above, aluminum oxide or tantalum oxide is used as a blocking film in addition to silicon nitride. In order to form these films, a CVD method or a sputtering method may be used. For example, for the formation of an aluminum oxide film, trimethylaluminum A
l (CH ₃ ) ₃ may be oxidized with nitric oxide (N ₂ O, NO, NO ₂ ) or the like.

FIG. 4 shows an example of forming a low impurity concentration drain (LDD), which is a known technique, using the present invention. First, low pressure CVD on an insulating substrate 401 such as quartz or AN glass.
A silicon nitride film 402 is formed to a thickness of 50 to 1000 nm by the method. At this time, if not only the front surface of the substrate but also the back surface is covered with the silicon nitride film, the present invention can be implemented more reliably and effectively. That is, in the manufacturing process, mobile ions generated from the back surface (though they are contained in the substrate) often reach the surface for various reasons. As a result, for example, during gate oxide film fabrication, Mobile ions penetrate into the membrane. In addition, if the back surface is a source of mobile ions, a manufacturing apparatus such as a film forming apparatus is constantly contaminated by mobile ions. Therefore, in order to maintain the cleanliness of the manufacturing apparatus, a silicon nitride film is formed on the back surface of the substrate. It is necessary to provide it. A buffering silicon oxide film 403 is similarly formed on the silicon nitride film by a low pressure CVD method to a thickness of 50 to 1000 nm. At this time, if a gas containing halogen such as hydrogen chloride in a volume ratio of 3% to 6%, for example, about 5% is mixed in the source gas, a halogen element is taken into the obtained silicon oxide film. Since this halogen binds to alkali ions such as sodium and fixes sodium, a greater effect can be obtained in preventing sodium contamination. However, addition of excess halogen is not preferable because it roughens the film and impairs adhesion and surface flatness.

Next, an amorphous silicon film to which neither a donor nor an acceptor is added is formed to a thickness of 20 to 500 nm by low pressure CVD, plasma CVD, or sputtering. Then, this is etched on the island. On top of that, a thickness of 10 to 100 n is formed as a gate insulating film.
The m silicon oxide film is formed by a low pressure CVD method or a sputtering method. At this time, as described above, the halogen material gas may be mixed in the raw material gas or the sputtering gas.

Then, phosphorous is 10 ²¹ by low pressure CVD or plasma CVD.
A polycrystalline or microcrystalline silicon film doped to about cm ⁻³ is formed. Then, this silicon film and the gate insulating film (silicon oxide) thereunder are patterned to form a gate electrode 41.
0 and a gate insulating film 404 are formed.

Further, ion implantation is performed in a self-aligned manner using this gate electrode as a mask, and a source (drain) region 4 having a relatively low impurity concentration (about 10 ¹⁷ to 10 ¹⁹ cm ⁻³ ).
07, a drain (source) region 408 is formed. A portion where impurities are not implanted remains as a channel region 408. Thus, FIG. 4A is obtained.

Next, as shown in FIG. 4B, a PSG film 413 is formed on the entire surface by low pressure CVD. Then, this is etched by a known directional etching to form a side wall 414 next to the gate electrode. Thereafter, ion implantation is performed again to form a source (drain) region 407a and a drain (source) region 409a having a high impurity concentration. The regions having a low impurity concentration are a source (drain) region 407b and a drain (source) region 409b to form an LDD. In this way, FIG. 4C is obtained.

Thereafter, as shown in FIG. 4D, a silicon nitride film 405 is formed to a thickness of 50 to 1000 nm on the entire surface by low pressure CVD. Thereafter, for example, the silicon film is crystallized by low-temperature annealing at about 600 ° C., and the source and drain regions are activated. This step may be performed by laser annealing. In this way, an intermediate of TFT is obtained.

The example of FIG. 4 is merely an example of the present invention, and it will be apparent that the present invention is not limited to the above steps. In the example of FIG. 4, as in the example of FIG. 3, there is no portion where the silicon nitride film, the gate electrode, and the source or drain region are adjacent to each other. That is, unlike the case of FIG.
14 is present, there is no problem as concerned in FIG. Furthermore, unlike FIG.
Donor and acceptor can be easily added.

The characteristics of the TFT using the present invention will be described. The TFT used in this example is an LDD type TFT manufactured on a quartz glass substrate according to the process of FIG. First, a silicon nitride film 402 having a thickness of 100 nm is formed on the quartz glass substrate 401 and on the back surface and side surfaces thereof (that is, the entire substrate) by a low pressure CVD method. Further, a silicon oxide film (low temperature oxide film) is continuously formed by a low pressure CVD method. (Also referred to as (LTO film)) 403 was formed to a thickness of 200 nm, and finally, an amorphous silicon film was formed to a thickness of 30 nm by low pressure CVD. The maximum process temperature at this time was 600 ° C. Next, the amorphous silicon film was patterned into an island shape. And
A very thin portion of the surface of the amorphous silicon film having a thickness of 2 to 10 nm was oxidized by an anodic oxidation method. Thereafter, a silicon oxide film having a thickness of 100 nm was formed by sputtering. Here, the sputtering atmosphere is a mixed gas of oxygen and argon or other rare gas, and the partial pressure of oxygen is 80.
% Or more. At this time, a defect occurs in the underlying film due to sputtering impact. For example, when the base is a silicon film, oxygen atoms are implanted into the silicon, and the oxygen concentration increases. In such a state, silicon has a large number of extreme levels. That is,
The boundary between silicon and silicon oxide becomes unclear. However, if a thin anodic oxide film is formed in advance as in this embodiment, since silicon oxide already exists during sputtering, mixing of atoms as described above is avoided, and the silicon film and the oxide film are oxidized. The boundary of the silicon film is maintained.

After the formation of this silicon oxide film, an n ⁺ type microcrystalline silicon film containing about 10 ²¹ cm ^{−3 of} phosphorus was formed to a thickness of 300 nm by low pressure CVD. The maximum process temperature for the above film formation was 650 ° C. Thereafter, the gate electrode was patterned to form a gate electrode 410 and a gate insulating film 404. Further, arsenic ions are implanted at 2 × 10 ¹ by ion implantation.
⁸ cm ^{−3 was} implanted to form source and drain regions 407 and 409. Thus, FIG. 4A was obtained.

Next, a PSG film 413 was formed by a low pressure CVD method as shown in FIG. 4B, and a sidewall 414 shown in FIG. 4C was formed by directional etching. Further, arsenic ions were implanted into the regions 407a and 409a by 5 × 10 ²⁰ cm ⁻³ by ion implantation.

Thereafter, a silicon nitride film 405 was formed on the entire surface by a low pressure CVD method. Thus, FIG.
D) was obtained. Thereafter, annealing is performed in vacuum at 620 ° C. for 48 hours to obtain regions 407a and 407b.
, 408, 409a, 409b were activated. Then, a PSG film was formed on the whole as an interlayer insulator by a low pressure CVD method, holes for electrodes were formed, and aluminum electrodes were formed in the source region and the drain region. Finally, a silicon nitride film was again formed by a low pressure CVD method for the purpose of passivation.

The TFT formed in this way was extremely reliable. It has been shown that the operation characteristics of the element do not change even by so-called bias-temperature treatment (BT treatment). An example is shown in FIG. The BT process was performed by wiring as shown in the circuit diagram shown in FIG. 6 and applying a bias voltage V _B between the gate (G), the source (S), and the drain (D) during heating. Specifically, the gate voltage-drain current characteristics of the TFT were measured immediately after fabrication at room temperature (V _B = 0), and then a voltage of +20 V was applied to the gate electrode for 1 hour at 150 ° C. The voltage-drain current characteristic was measured (V _B = + 20 V), then again 1
Apply a voltage of -20 V to the gate electrode for 1 hour at 50 ° C., and then measure the gate voltage-drain current characteristics of the TFT at room temperature (V _B = −20 V). Examined.

FIG. 6B shows characteristics of the TFT manufactured by the method described above. in this way,
The characteristics are not affected at all by the bias voltage V _B, and as a result of precise measurement, the fluctuation of the threshold voltage is 0
. It was 2V or less.

On the other hand, what is shown in FIG. 6A is manufactured by the same process as the method shown in this embodiment except that the silicon nitride films 402 and 405 are not provided. properties have gone largely dependent on the V _B. Such characteristic fluctuation (threshold voltage fluctuation) is explained to be caused by mobile ions such as sodium in the gate insulating film. The larger the fluctuation, the more mobile ions, and as shown in FIG. It is explained that the amount of mobile ions is not so much when the fluctuation is small. From the fluctuation range of the threshold voltage, the amount of movable ions in the gate electrode of the TFT manufactured in this example is estimated to be about 8 × 10 ¹⁰ cm ⁻³ . That is, it has been shown that by providing a silicon nitride film as in the present invention, it is possible to remarkably improve TFT characteristics and improve reliability.

An example of a TFT according to the present invention is shown. An example of a TFT according to the present invention is shown. An example of a TFT according to the present invention is shown. An example of manufacturing a TFT according to the present invention will be described. An example of a conventional TFT is shown. The characteristics of the TFT using the present invention and the TFT not using it are shown.

Explanation of symbols

Reference Signs List 101 insulating substrate 102 first blocking film 103 buffer insulating film 104 gate insulating film 105 second blocking film 106 interlayer insulating film 107 source (drain) region 108 channel region 109 drain (source) region 110 gate electrode 111 source (drain) ) Electrode 112 Drain (source) electrode

Claims (9)

Forming a first blocking film on the front and back surfaces of the insulating substrate containing mobile ions;
Forming an insulating film containing halogen on the first blocking film formed on the front surface of the insulating substrate or the back surface of the insulating substrate;
Forming a semiconductor film on the insulating coating;
Forming a gate insulating film on the semiconductor film;
Forming a gate electrode on the gate insulating film;
A method for manufacturing a semiconductor device, comprising: forming a second blocking film so as to cover the semiconductor film, the gate insulating film, and the gate electrode. Forming a first blocking film so as to cover the front surface, back surface, and side surfaces of the insulating substrate containing mobile ions;
Forming an insulating film containing halogen on the first blocking film formed on the front surface of the insulating substrate or the back surface of the insulating substrate;
Forming a semiconductor film on the insulating coating;
Forming a gate insulating film on the semiconductor film;
Forming a gate electrode on the gate insulating film;
A method for manufacturing a semiconductor device, comprising: forming a second blocking film so as to cover the semiconductor film, the gate insulating film, and the gate electrode. A first blocking film is formed by a low pressure CVD method so as to cover the front surface, the back surface, and the side surface of the insulating substrate containing mobile ions,
Forming an insulating film containing halogen on the first blocking film formed on the front surface of the insulating substrate or the back surface of the insulating substrate by a low pressure CVD method;
A semiconductor film is formed on the insulating film by a low pressure CVD method,
Forming a gate insulating film on the semiconductor film;
Forming a gate electrode on the gate insulating film;
A method for manufacturing a semiconductor device, comprising: forming a second blocking film so as to cover the semiconductor film, the gate insulating film, and the gate electrode.   4. The method for manufacturing a semiconductor device according to claim 3, wherein the first blocking film, the insulating film, and the semiconductor film are formed continuously.   5. The method for manufacturing a semiconductor device according to claim 1, wherein silicon oxide is used as the insulating film. In any one of claims 1 to 5, wherein the gate insulating film is a method for manufacturing a semiconductor device characterized by containing a halogen. In any one of claims 1 to 6, the method for manufacturing a semiconductor device, wherein a thickness of the first blocking layer is 50-1000 nm. In any one of claims 1 to 7, wherein the first blocking layer, a method for manufacturing a semiconductor device, which comprises using silicon nitride, aluminum oxide or tantalum oxide. In any one of claims 1 to 8, wherein the second blocking film, a method for manufacturing a semiconductor device, which comprises using silicon nitride, aluminum oxide or tantalum oxide.

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