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JP3923107B2 - シリコンウェーハの製造方法およびその装置 - Google Patents

シリコンウェーハの製造方法およびその装置 Download PDF

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Publication number
JP3923107B2
JP3923107B2 JP08978496A JP8978496A JP3923107B2 JP 3923107 B2 JP3923107 B2 JP 3923107B2 JP 08978496 A JP08978496 A JP 08978496A JP 8978496 A JP8978496 A JP 8978496A JP 3923107 B2 JP3923107 B2 JP 3923107B2
Authority
JP
Japan
Prior art keywords
grinding
grindstone
silicon wafer
double
back surfaces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP08978496A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09248740A (ja
Inventor
恵一 田中
修 加賀谷
徹 畠中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP08978496A priority Critical patent/JP3923107B2/ja
Priority to TW085105754A priority patent/TW303488B/zh
Priority to KR1019960019031A priority patent/KR100457718B1/ko
Priority to DE19626396A priority patent/DE19626396B4/de
Priority to CN96110121A priority patent/CN1096108C/zh
Publication of JPH09248740A publication Critical patent/JPH09248740A/ja
Application granted granted Critical
Publication of JP3923107B2 publication Critical patent/JP3923107B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/015—Temperature control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/003—Multipurpose machines; Equipment therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mining & Mineral Resources (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
JP08978496A 1995-07-03 1996-04-11 シリコンウェーハの製造方法およびその装置 Expired - Fee Related JP3923107B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP08978496A JP3923107B2 (ja) 1995-07-03 1996-04-11 シリコンウェーハの製造方法およびその装置
TW085105754A TW303488B (zh) 1995-07-03 1996-05-15
KR1019960019031A KR100457718B1 (ko) 1995-07-03 1996-05-31 실리콘웨이퍼의제조방법과그장치
DE19626396A DE19626396B4 (de) 1995-07-03 1996-07-01 Verfahren und Vorrichtung zur Herstellung und zum Schleifen von Siliziumscheiben
CN96110121A CN1096108C (zh) 1995-07-03 1996-07-03 硅片的制造装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP19117195 1995-07-03
JP8-4415 1996-01-12
JP7-191171 1996-01-12
JP441596 1996-01-12
JP08978496A JP3923107B2 (ja) 1995-07-03 1996-04-11 シリコンウェーハの製造方法およびその装置

Publications (2)

Publication Number Publication Date
JPH09248740A JPH09248740A (ja) 1997-09-22
JP3923107B2 true JP3923107B2 (ja) 2007-05-30

Family

ID=27276263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP08978496A Expired - Fee Related JP3923107B2 (ja) 1995-07-03 1996-04-11 シリコンウェーハの製造方法およびその装置

Country Status (5)

Country Link
JP (1) JP3923107B2 (zh)
KR (1) KR100457718B1 (zh)
CN (1) CN1096108C (zh)
DE (1) DE19626396B4 (zh)
TW (1) TW303488B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101708593B (zh) * 2009-12-08 2013-01-09 中国电子科技集团公司第四十五研究所 化学机械抛光心轴传动装置
CN106425857A (zh) * 2016-11-18 2017-02-22 南京华东电子信息科技股份有限公司 一种新型中小型单片液晶面板抛光固定治具

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JP3620554B2 (ja) * 1996-03-25 2005-02-16 信越半導体株式会社 半導体ウェーハ製造方法
JP2002346918A (ja) * 2001-05-29 2002-12-04 Speedfam Co Ltd 両面研磨装置
DE10132504C1 (de) * 2001-07-05 2002-10-10 Wacker Siltronic Halbleitermat Verfahren zur beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben und seine Verwendung
DE10142400B4 (de) * 2001-08-30 2009-09-03 Siltronic Ag Halbleiterscheibe mit verbesserter lokaler Ebenheit und Verfahren zu deren Herstellung
FR2850966B1 (fr) 2003-02-10 2005-03-18 Rhodia Polyamide Intermediates Procede de fabrication de composes dinitriles
FR2854891B1 (fr) 2003-05-12 2006-07-07 Rhodia Polyamide Intermediates Procede de preparation de dinitriles
CN1301184C (zh) * 2003-12-16 2007-02-21 汪开庆 加工半导体用兰宝石晶体基片的光学研磨机及其加工方法
EP1948591A1 (en) 2005-10-18 2008-07-30 INVISTA Technologies S.à.r.l. Process of making 3-aminopentanenitrile
JP2009530278A (ja) 2006-03-17 2009-08-27 インビスタ テクノロジーズ エス エイ アール エル 塩基性添加剤による処理でトリ有機ホスファイトを精製する方法
DE102006062871B4 (de) * 2006-07-13 2012-06-21 Peter Wolters Gmbh Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben
DE102006062872B4 (de) * 2006-07-13 2012-06-14 Peter Wolters Gmbh Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben
US7919646B2 (en) 2006-07-14 2011-04-05 Invista North America S.A R.L. Hydrocyanation of 2-pentenenitrile
DE102007056627B4 (de) 2007-03-19 2023-12-21 Lapmaster Wolters Gmbh Verfahren zum gleichzeitigen Schleifen mehrerer Halbleiterscheiben
CN101687658B (zh) 2007-05-14 2013-07-24 因温斯特技术公司 高效反应器和方法
WO2008157218A1 (en) 2007-06-13 2008-12-24 Invista Technologies S.A.R.L. Process for improving adiponitrile quality
WO2009091771A2 (en) 2008-01-15 2009-07-23 Invista Technologies S.A R.L Process for making and refining 3-pentenenitrile, and for refining 2-methyl-3-butenenitrile
CN101918356B (zh) 2008-01-15 2013-09-25 因温斯特技术公司 戊烯腈的氢氰化
JP4780142B2 (ja) * 2008-05-22 2011-09-28 信越半導体株式会社 ウェーハの製造方法
JP2009302409A (ja) * 2008-06-16 2009-12-24 Sumco Corp 半導体ウェーハの製造方法
JP5600867B2 (ja) * 2008-06-16 2014-10-08 株式会社Ｓｕｍｃｏ 半導体ウェーハの製造方法
KR101610423B1 (ko) 2008-10-14 2016-04-08 인비스타 테크놀러지스 에스.에이 알.엘. 2-ｓｅｃ-알킬-4,5-디-(ｎ-알킬)페놀의 제조 방법
DE102009025242B4 (de) * 2009-06-17 2013-05-23 Siltronic Ag Verfahren zum beidseitigen chemischen Schleifen einer Halbleiterscheibe
JP5615920B2 (ja) 2009-08-07 2014-10-29 インヴィスタ テクノロジーズ エスアエルエル ジエステルを形成するための水素化およびエステル化
CN101875181B (zh) * 2010-05-31 2012-02-22 青岛理工大学 脆硬材料磨削机床
CN101972983B (zh) * 2010-08-11 2013-01-09 中国电子科技集团公司第四十五研究所 化学机械抛光心轴装置
CN102172885B (zh) * 2011-01-31 2013-05-15 北京通美晶体技术有限公司 衬底的抛光装置及其抛光的衬底
CN102179734A (zh) * 2011-03-14 2011-09-14 刘晓明 超硬刀片钝化抛光机
CN102229093B (zh) * 2011-07-01 2013-09-18 中国电子科技集团公司第四十五研究所 一种应用在晶片抛光设备上的升降加压机构
DE102011089570A1 (de) 2011-12-22 2013-06-27 Siltronic Ag Führungskäfig zum beidseitigen Schleifen von mindestens einem scheibenförmigen Werkstück zwischen zwei rotierenden Arbeitsscheiben einer Schleifvorrichtung, Verfahren zur Herstellung des Führungskäfigs und Verfahren zum gleichzeitigen beidseitigen Schleifen von scheibenförmigen Werkstücken unter Verwendung des Führungskäfigs
CN103123865B (zh) * 2013-02-26 2015-05-27 宁波韵升股份有限公司 一种磁性产品加工方法及自动分选设备
CN104669105B (zh) * 2013-11-26 2017-12-29 浙江汇锋塑胶科技有限公司 一种蓝宝石触摸面板的两面研磨方法
CN103817572A (zh) * 2014-02-18 2014-05-28 河南机电高等专科学校 一种离合器摩擦钢片修复装置
CN103847032B (zh) * 2014-03-20 2016-01-06 德清晶辉光电科技有限公司 一种大直径超薄石英晶片的生产工艺
JP6707831B2 (ja) * 2015-10-09 2020-06-10 株式会社Sumco 研削装置および研削方法
JP6792363B2 (ja) * 2016-07-22 2020-11-25 株式会社ディスコ 研削装置
CN107543837B (zh) * 2017-08-25 2020-02-21 郑州磨料磨具磨削研究所有限公司 一种砂轮精磨后硅片损伤层的检测方法
TWI656233B (zh) * 2017-10-26 2019-04-11 漢民科技股份有限公司 單晶圓處理裝置及其操作方法、傳送方法與準直器
CN108544329A (zh) * 2018-04-09 2018-09-18 中国工程物理研究院材料研究所 一种表面抛磨装置及其应用
WO2020056538A1 (zh) * 2018-09-17 2020-03-26 苏州迈创信息技术有限公司 自动研磨机
JP7217409B2 (ja) * 2020-01-24 2023-02-03 株式会社東京精密 亀裂進展装置及び亀裂進展方法
CN112692722A (zh) * 2020-12-24 2021-04-23 江苏天科合达半导体有限公司 打磨设备、打磨盘的加工方法以及碳化硅晶片的加工方法
CN113752111B (zh) * 2021-09-30 2023-11-21 浙江仲全数控科技有限公司 一种立式双端面磨床
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101708593B (zh) * 2009-12-08 2013-01-09 中国电子科技集团公司第四十五研究所 化学机械抛光心轴传动装置
CN106425857A (zh) * 2016-11-18 2017-02-22 南京华东电子信息科技股份有限公司 一种新型中小型单片液晶面板抛光固定治具

Also Published As

Publication number Publication date
KR100457718B1 (ko) 2005-04-06
CN1145531A (zh) 1997-03-19
TW303488B (zh) 1997-04-21
DE19626396A1 (de) 1997-01-16
DE19626396B4 (de) 2006-12-07
CN1096108C (zh) 2002-12-11
JPH09248740A (ja) 1997-09-22
KR970008384A (ko) 1997-02-24

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