JP3909222B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention belongs to the technical field of a substrate processing apparatus that heats or cools a substrate such as a semiconductor wafer.
[0002]
[Prior art]
In the manufacturing process of a semiconductor device, an interlayer insulating film is formed by, for example, an SOD (Spin on Dielectric) system. In this SOD system, an interlayer insulating film is formed by spin-coating a coating film on a wafer and applying chemical treatment or heat treatment.
[0003]
For example, when an interlayer insulating film is formed by a sol-gel method, an insulating film material such as a colloid of TEOS (tetraethoxysilane) is first dispersed in an organic solvent on a semiconductor wafer (hereinafter referred to as “wafer”). Supply the solution. Next, the wafer supplied with the solution is subjected to gelation, and then the solvent is replaced. Then, the wafer with the solvent replaced is subjected to a heat treatment.
[0004]
[Problems to be solved by the invention]
In the processing chamber in which the plate is disposed, the temperature changes around 100 ° C. due to outside air entering the processing chamber when the wafer is carried in and out of the processing chamber. For this reason, the plate made of ceramics was repeatedly swelled and contracted, so that the plate was severely deteriorated and the plate was cracked.
[0005]
An object of the present invention is to provide a substrate processing apparatus in which a plate with less cracking and improved durability is arranged.
[0006]
[Means for Solving the Problems]
  In order to solve such a problem, the substrate processing apparatus of the present invention comprises:A plate formed with a predetermined gap with respect to a horizontally arranged substrate, divided into a plurality of divided plates with a gap between each other, and a substrate held on the plate is heated. A first plate disposed separately below the substrate so as to sandwich the substrate, and a second plate disposed separately above the substrate, the first plate comprising: a heater; A lower container that supports the lower container and a lid that can be moved up and down to form a space that forms a processing chamber for the substrate together with the lower container, and a side portion of the lid is located above the second plate in the processing chamber And a second supply port for supplying gas between the first plate and the second plate in the processing chamber, and a side surface portion of the lower container. In Third supply port for supplying the gas is provided in the lower than the first plate a said processing chamberIt is characterized by that.
[0007]
According to such a configuration of the present invention, since the plate is formed of a plurality of divided plates, the plate is not easily broken even after a violent temperature change, and durability is improved.
[0009]
  Also,The gap isSplitSince a plurality of plates are provided in the plate, the gas is supplied to the substrate through these gaps, and the gas is uniformly and uniformly supplied to the wafer W in the plane.
According to an aspect of the present invention, the gas supplied above the second plate is supplied to the substrate through the gap between the adjacent divided plates forming the second plate, and is supplied from the first plate. The gas supplied to the lower side is supplied to the substrate through a gap between the adjacent divided plates forming the first plate.
According to one embodiment of the present invention, when the substrate is heat-treated in the processing chamber, gas is supplied from the second supply port.
According to an aspect of the present invention, when the substrate is cooled in the processing chamber, gas is supplied from the first supply port and the third supply port.
[0010]
According to an aspect of the present invention, the apparatus includes a plurality of support members that are inserted through the gap between the adjacent divided plates and hold the substrate with the predetermined gap.
[0011]
According to such a configuration, since the substrate is supported by the support member, the load on the substrate is not applied to the plate, so that the thickness of the plate can be made as thin as possible. Thereby, since the plate can be formed thinly, the temperature raising time of the plate can be shortened, and the heat capacity can be reduced, contributing to energy saving.
[0012]
In addition, for example, when the gas is supplied and the substrate is cooled, the gas is supplied to the substrate through the gaps of the thin divided plates. Therefore, the distance through which the thin plate passes through the gap is larger than that of the thick plate. Therefore, the gas flow rate can be reduced, which contributes to energy saving.
[0013]
According to one form of this invention, the thickness of the said plate is 0.5 mm-2.0 mm.
[0014]
According to an aspect of the present invention, the gap between the adjacent divided plates is gradually formed to be larger from the upstream side to the downstream side where the gas is supplied. Thereby, a uniform cooling process can be performed on the entire surface of the wafer W.
[0015]
According to one aspect of the present invention, the surface area of the dividing plate is formed so as to gradually decrease from the upstream side to the downstream side where the gas is supplied. Thereby, a uniform cooling process can be performed on the entire surface of the wafer W.
[0016]
According to one form of this invention, it further comprises the film | membrane member which is arrange | positioned at the gap | interval of the said adjacent division plate so that attachment or detachment is possible, and has a some hole. Accordingly, for example, by preparing two or more film members having a plurality of holes having different diameters, the amount of gas supplied to the substrate can be controlled by appropriately replacing them.
[0017]
According to an aspect of the present invention, the apparatus further includes a guide member that is disposed on the back side of the plate and guides the supplied gas to a gap between the adjacent divided plates. Thereby, gas can be efficiently supplied to the substrate.
[0018]
According to an aspect of the present invention, the guide member is formed to be inclined so as to gradually approach the plate from the upstream side to the downstream side where the gas is supplied. Thereby, for example, the gas temperature slightly rises due to the heat from the plate as it goes from the upstream side to the downstream side of the gas supply, but the flow rate of the gas supplied to the substrate can be increased toward the downstream side. Therefore, a uniform cooling process can be performed on the entire surface of the substrate.
[0019]
  In the substrate processing method of the present invention, (a) a step of holding a substrate on a first plate in which a plurality of divided plates are arranged with a gap therebetween, and (b) heating the first plate. And (c) separating the substrate from the first plate and supplying a cooling gas to the substrate through the gap.A second plate in which a plurality of divided plates are disposed with a gap therebetween is disposed opposite to the first plate with the substrate interposed therebetween. In the step (c), the second plate The cooling gas is supplied through the gap provided in the two plates.
[0020]
According to such a configuration, the heating process and the cooling process can be performed in the same apparatus.
[0021]
Further features and advantages of the present invention will become more apparent by referring to the attached drawings and description of embodiments of the invention.
[0022]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings.
[0023]
1 to 3 are diagrams showing the overall configuration of the SOD system. FIG. 1 is a plan view, FIG. 2 is a front view, and FIG. 3 is a rear view. The substrate processing apparatus as the first embodiment of the present invention is used as a DCC heat processing chamber which is a part of the SOD system.
[0024]
In the SOD system 1, a plurality of semiconductor wafers (hereinafter referred to as wafers) W as a substrate are loaded into the system from the outside in units of 25 wafer cassettes CR, for example, in units of 25, or unloaded from the system. A process in which a cassette block 10 for loading / unloading the wafer W and various single-wafer processing stations for performing predetermined processing on the wafer W one by one in the SOD coating process are arranged in multiple stages at predetermined positions. The block 11 and the cabinet 12 provided with a bottle of ammonia water, a bubbler, a drain bottle and the like required in the aging process are integrally connected.
[0025]
In the cassette block 10, as shown in FIG. 1, a plurality of, for example, up to four wafer cassettes CR are arranged in a line in the X direction at the position of the protrusion 20a on the cassette mounting table 20 with the respective wafer entrances facing the processing block 11 side. A wafer carrier 21 placed and movable in the cassette arrangement direction (X direction) and in the wafer arrangement direction (Z vertical direction) of the wafers stored in the wafer cassette CR selectively accesses each wafer cassette CR. It has become. Further, the wafer carrier 21 is configured to be rotatable in the θ direction, and also accesses a delivery / cooling plate (TCP) belonging to the multi-stage station section of the third group G3 on the processing block 11 side as will be described later. It can be done.
[0026]
In the processing block 11, as shown in FIG. 1, a vertical transfer type main wafer transfer mechanism 22 is provided at the center, and all the processing stations are arranged in multiple stages around one set or a plurality of sets. ing. In this example, there are four sets of G1, G2, G3, G4, and the multistage stations of the first and second sets G1, G2 are juxtaposed on the front side of the system (front side in FIG. 1). The multi-stage station of the group G3 is arranged adjacent to the cassette block 10, and the multi-stage station of the fourth group G4 is arranged adjacent to the cabinet 12.
[0027]
As shown in FIG. 2, in the first group G1, a wafer W is placed on a spin chuck in a cup CP, an insulating film material is supplied, and the wafer is rotated to apply a uniform insulating film on the wafer. A wafer W is placed on a spin chuck in a coating processing station (SCT) and a chemical solution for exchange such as HMDS and heptane is supplied, and the solvent in the insulating film coated on the wafer is subjected to another process before the drying process. A solvent exchange processing station (DSE) that performs processing to replace with a solvent is stacked in two stages from the bottom.
[0028]
In the second group G2, the SOD coating processing station (SCT) is arranged in the upper stage. If necessary, an SOD coating processing station (SCT), a solvent exchange processing station (DSE), or the like can be arranged below the second group G2.
[0029]
As shown in FIG. 3, in the third group G3, two low oxygen high temperature heat treatment stations (OHP), a low temperature heat treatment station (LHP), two cooling treatment stations (CPL), Cooling plates (TCP) and cooling processing stations (CPL) are arranged in multiple stages in order from the top. Here, the low oxygen high temperature heat treatment station (OHP) has a hot plate on which the wafer W is placed in a hermetically sealable processing chamber, and discharges N2 uniformly from a hole on the outer periphery of the hot plate, The wafer W is exhausted from the center, and the wafer W is heat-treated in a low oxygen atmosphere. The low temperature heat treatment station (LHP) has a hot plate on which the wafer W is placed, and heats the wafer W at a low temperature. The cooling processing station (CPL) has a cooling plate on which the wafer W is placed, and cools the wafer W. The delivery / cooling plate (TCP) has a two-stage structure having a cooling plate for cooling the wafer W at the lower stage and a delivery table at the upper stage, and delivers the wafer W between the cassette block 10 and the processing block 11.
[0030]
In the fourth group G4, a low-temperature heat treatment station (LHP), two low oxygen cure / cooling treatment stations (DCC), and an aging treatment station (DAC) are arranged in multiple stages in order from the top. Here, the aging treatment station (DAC) is placed in a process chamber that can be sealed with NH.₃+ H₂O is introduced to age the wafer W, and the insulating film material film on the wafer W is wet-gelled.
[0031]
FIG. 4 is a perspective view showing the appearance of the main wafer transfer mechanism 22. The main wafer transfer mechanism 22 is connected to the upper end and the lower end of the cylindrical support 27 having a pair of wall portions 25 and 26 facing each other. A wafer transfer device 30 that can be moved up and down in the vertical direction (Z direction) is provided inside. The cylindrical support 27 is connected to the rotating shaft of the motor 31 and rotates integrally with the wafer transfer device 30 around the rotating shaft by the rotational driving force of the motor 31. Accordingly, the wafer transfer device 30 is rotatable in the θ direction. For example, three tweezers are provided on the transfer base 40 of the wafer transfer apparatus 30. These tweezers 41, 42, 43 all have a form and a size that can pass through the side opening 44 between both wall portions 25, 26 of the cylindrical support 27, and are front and rear along the X direction. It is configured to be freely movable. The main wafer transfer mechanism 22 accesses the processing stations arranged around the tweezers 41, 42, and 43, and transfers the wafer W to and from these processing stations.
[0032]
Next, the low oxygen curing / cooling processing station (DCC) will be described with reference to FIGS. FIG. 5 is a plan view of the above-described low oxygen curing / cooling processing station (DCC), and FIG. 6 is a cross-sectional view thereof. FIG. 7 is a schematic plan view of a plate disposed in the DCC heat treatment chamber.
[0033]
The low oxygen cure / cooling treatment station (DCC) has a heat treatment chamber 341 and a cooling treatment chamber 342 provided adjacent thereto, and the heat treatment chamber 341 has a set temperature of 200 to 470. A plate 343 that can be set to ° C. is provided. In this embodiment, the wafer W is heated to, for example, 400 ° C. in the DCC heat treatment chamber 341. The low oxygen cure / cooling processing station (DCC) further includes a first gate shutter 344 that is opened and closed when the wafer W is transferred to and from the main wafer transfer mechanism 22, a heating processing chamber 341, and a cooling processing chamber 342. A second gate shutter 345 for opening and closing between the second gate shutter 345 and a ring shutter 346 that is lifted and lowered together with the second gate shutter 345 while surrounding the wafer W around the plate 343. Further, the plate 343 is provided with three lift pins 347 on which the wafer W is placed and raised and lowered. A shielding screen may be provided between the plate 343 and the ring shutter 346.
[0034]
The plate 343 is divided into a plurality of divided plates 343a to 343i made of ceramics in a strip shape, and the respective end portions of the divided plates 343a to 343i are supported by support plates 311a and 311b. A heater 365 is incorporated in each of the divided plates 343a to 343i. In this way, the plate 343 is formed by arranging a plurality of divided plates 343a to 343i, so that the expansion and expansion of the plate due to a rapid change in temperature compared to the case where the plate 343 is formed by a single plate. The stress due to the contraction can be distributed to the individual divided plates 343a to 343i. Furthermore, by providing a gap between adjacent divided plates, the thermal expansion of the divided plates can be absorbed by the gap. Therefore, the crack of the plate 343 hardly occurs, and the durability of the plate 343 is improved. Further, the divided plates are arranged so that the interval between the adjacent divided plates is 5 mm or less, and in this case, 2 to 3 mm or less. Thus, by setting the interval to 5 mm or less, preferably 2 to 3 mm or less, the wafer W portion that does not correspond to the divided plate, that is, the portion that is not directly exposed to the heater is sufficiently heated. Generation of uneven heating can be prevented.
[0035]
Below the heat treatment chamber 341, an elevating mechanism 348 for elevating the three lift pins 347, an elevating mechanism 349 for elevating the ring shutter 346 together with the second gate shutter 345, and a first gate shutter. An elevating mechanism 350 for elevating and lowering 344 is provided. In the present embodiment, a part of the lift pins 347 penetrates the divided plate 343e, and the other lift pins 347 are located in the gap between the adjacent divided plates.
[0036]
In the heat treatment chamber 341, N is used as a purge gas from near the bottom of the wafer W.₂Gas supplied, N supplied₂The gas flows from the peripheral edge of the wafer W toward the center of the wafer. Further, an exhaust pipe 351 is connected to the upper part of the heat treatment chamber 341, and the inside of the heat treatment chamber 341 is configured to be exhausted through the exhaust pipe 351. Furthermore, an oxygen concentration monitor unit 361 for monitoring the oxygen concentration in the heat treatment chamber 341 is connected to the heat treatment chamber 341. And as will be described later, N₂By exhausting while supplying the gas, the inside of the heat treatment chamber 341 is maintained in a low oxygen concentration (for example, 50 ppm or less) atmosphere. Of course, the oxygen concentration monitor unit may be arranged on an exhaust path such as an exhaust pipe.
[0037]
The heat processing chamber 341 and the cooling processing chamber 342 communicate with each other through a communication port 352, and a cooling plate 353 for placing and cooling the wafer W is horizontally moved along the guide plate 354 by the moving mechanism 355. It is configured to be movable in the direction. As a result, the cooling plate 353 can enter the heat treatment chamber 341 via the communication port 352, and the wafer W after being heated by the plate 343 in the heat treatment chamber 341 is received from the lift pins 347 and subjected to the cooling treatment. After the wafer W is transferred into the chamber 342 and cooled, the wafer W is returned to the lift pins 347.
[0038]
The set temperature of the cooling plate 353 is, for example, 15 to 25 ° C., and the application temperature range of the wafer W to be cooled is, for example, 200 to 470 ° C.
[0039]
Further, the cooling chamber 342 is connected to N through it via a supply pipe 356.₂An inert gas such as the like is supplied, and the inside thereof is further exhausted to the outside via the exhaust pipe 357. As a result, like the heat treatment chamber 341, the inside of the cooling treatment chamber 342 is maintained in an atmosphere having a low oxygen concentration (for example, 50 ppm or less).
[0040]
On the plate 343, a proximity sheet 251 and a proximity pin 252 having a height of 0.2 mm, and a guide guide 253 are provided. As a result, N₂When the gas is replaced, air does not remain in the gap between the wafer W and the plate 343, so that the time for setting the inside of the heat treatment chamber 341 to a desired low oxygen atmosphere can be shortened. This heat treatment can be performed in a short time.
[0041]
Next, an operation in the SOD system 1 configured as described above will be described, and in particular, a process performed in the DCC will be described in detail.
[0042]
First, in the cassette block 10, the unprocessed wafer W is transferred from the wafer cassette CR through the wafer transfer body 21 to a transfer table in a transfer / cooling plate (TCP) belonging to the third group G3 on the processing block 11 side.
[0043]
The wafer W transferred to the transfer table on the transfer / cooling plate (TCP) is transferred to the cooling processing station (CPL) via the main wafer transfer mechanism 22. In the cooling processing station (CPL), the wafer W is cooled to a temperature suitable for processing in the SOD coating processing station (SCT).
[0044]
The wafer W cooled in the cooling processing station (CPL) is transferred to the SOD coating processing station (SCT) via the main wafer transfer mechanism 22. In the SOD coating processing station (SCT), the wafer W is coated with a solution in which an insulating film material, for example, a colloid of TEOS (tetraethoxysilane) is dispersed in an organic solvent.
[0045]
The wafer W that has been subjected to the insulating film material coating process at the SOD coating processing station (SCT) is transferred to the aging processing station (DAC) via the main wafer transfer mechanism 22. In the aging processing station (DAC), the wafer W is placed in the processing chamber with NH.₃+ H₂O is introduced to age the wafer W, and the insulating film material film on the wafer W is gelled.
[0046]
The wafer W subjected to the aging process at the aging process station (DAC) is transferred to the solvent exchange process station (DSE) via the main wafer transfer mechanism 22. Then, in the solvent exchange processing station (DSE), the wafer W is supplied with an exchange chemical solution, and a process of replacing the solvent in the insulating film applied on the wafer with another solvent is performed.
[0047]
The wafer W subjected to the replacement process in the solvent exchange processing station (DSE) is transferred to the low temperature heating processing station (LHP) via the main wafer transfer mechanism 22. Then, the wafer W is subjected to a low temperature heat treatment at a low temperature heat treatment station (LHP).
[0048]
The wafer W that has been subjected to the low temperature heat treatment at the low temperature heat treatment station (LHP) is transferred to the low oxygen high temperature heat treatment station (OHP) via the main wafer transfer mechanism 22. In the low oxygen high temperature heat treatment station (OHP), the wafer W is subjected to high temperature heat treatment in a low oxygen atmosphere. Alternatively, the wafer W that has been subjected to the low-temperature heat treatment at the low-temperature heat treatment station (LHP) is transferred to the low oxygen cure / cooling treatment station (DCC) via the main wafer transfer mechanism 22.
[0049]
In the low oxygen cure / cooling processing station (DCC), the first gate shutter 344 and the ring shutter 346 are raised, and the lift pins 347 are raised, and then the main wafer transfer mechanism 22 moves onto the lift pins 347 in the heat treatment chamber 341. The wafer W is transferred. At this time, since the outside air enters the heat treatment chamber 341, the temperature in the heat treatment chamber 341 decreases by about 100 to 200 ° C. from the temperature 400 ° C. during the heat treatment. In the present embodiment, since the plate 343 is configured by a plurality of divided plates 343a to 343i arranged with a gap therebetween, even if the plate 343 repeatedly expands and contracts due to such intense temperature change, it is difficult to break. Thereafter, the first and second gate shutters 344 and 345 and the ring shutter 346 are closed. In the heat treatment chamber 341, N₂N from gas supply₂Gas is supplied, and the inside of the heat treatment chamber 341 is further exhausted through the exhaust pipe 351. At this stage, a large amount of N of about 30 l / min₂Supply gas. As a result, the air remaining in the heat treatment chamber 341 is pushed out from the exhaust pipe 351, and the purge proceeds quickly.
[0050]
From such a state, the lift pins 347 are lowered, and the wafer W is placed on the plate 343 via the proximity sheet and the proximity pins. After that, when the oxygen concentration stabilizes below a certain value, N₂The gas supply is reduced to a small amount of about 10 l / min, and then N₂This amount of gas continues to be supplied. In such a low oxygen atmosphere, the wafer W is heat-treated at 400 ° C. at a high temperature.
[0051]
After the heat treatment, the lift pins 347 are raised, and the second gate shutter 345 and the ring shutter 346 are raised. Thereafter, the cooling plate 353 enters the heat treatment chamber 341 through the communication port 352 along the guide plate 354 by the moving mechanism 355. The cooling plate 353 receives the wafer W heated by the plate 343 from the lift pins 347 and carries it into the cooling processing chamber 342. After the wafer W is cooled, the wafer W is returned to the lift pins 347. The cooling plate 353 is set to a temperature of 15 to 25 ° C., for example. Even when the wafer W is carried in and out between the heat processing chamber 341 and the cooling processing chamber 342, the low-temperature gas in the cooling processing chamber 342 is heated by the rise of the second gate shutter 345 and the ring shutter 346. Although it flows into the processing chamber 341 and the temperature in the heat processing chamber 341 decreases, in this embodiment, even if the plate 343 repeatedly expands and contracts due to such a drastic temperature change, it is difficult to crack.
[0052]
The wafer W processed in the low oxygen curing / cooling processing station (DCC) is transferred to the cooling plate in the delivery / cooling plate (TCP) via the main wafer transfer mechanism 22. Then, the wafer W is cooled on the cooling plate in the delivery / cooling plate (TCP).
[0053]
The wafer W cooled by the cooling plate in the delivery / cooling plate (TCP) is transferred to the wafer cassette CR through the wafer transfer body 21 in the cassette block 10.
[0054]
As described above, in the SOD system 1 of the present embodiment, the plate is formed from a plurality of divided plates in the heat treatment chamber in which the wafer W is heat-treated. Improved. In the above-described embodiment, the present invention is applied to the heat treatment chamber in the low oxygen curing / cooling treatment station (DCC), but it is needless to say that the present invention can be applied to other heat treatment apparatuses.
[0055]
Next, a substrate processing apparatus in the second embodiment will be described. In the first embodiment described above, the low oxygen curing / cooling processing station (DCC) has a structure in which the heat processing chamber and the cooling processing chamber are connected to each other. However, in the substrate processing apparatus in the second embodiment, 1 It has a structure in which both heat treatment and cooling treatment are performed in one processing chamber. Hereinafter, a description will be given with reference to FIG. FIG. 8 is a schematic cross-sectional view of the substrate processing apparatus 440 according to the second embodiment. FIG. 8A shows a state during the heat treatment, and FIG. 8B shows a state during the cooling process.
[0056]
The substrate processing apparatus 440 includes a first container 231 made of, for example, ceramics with a built-in heater, a lower container 219 that supports the first plate 231, and a lower container so as to form a processing chamber together with the lower container 219. A lid 220 that can be moved up and down and is in close contact with and separated from the peripheral edge of the 219 via a seal member 233, a second plate 221 that is disposed to face the first plate 231 via the wafer W, the first plate 231 and its Three lift pins 235 for raising and lowering the wafer W between the upper position and the upper position are provided. Further, the side of the lid 220 has N higher than the second plate 221.₂Supply port 242 for supplying gas into the processing chamber, N below the second plate 221₂A supply port 241 for supplying gas into the processing chamber is formed, and an exhaust port 243 is formed in a side surface facing the supply ports 241 and 242. On the side surface of the lower container 219, there is N below the first plate 231.₂A supply port 240 for supplying gas into the processing chamber is formed. The first plate 231 and the second plate 221 are divided and separated into strip-shaped divided plates 221a to 221g and 231a to 231g, respectively, similarly to the plate of the first embodiment described above. The adjacent divided plates are arranged with gaps 222 and 232 of 2 to 3 mm.
[0057]
Further, in the substrate processing apparatus 440, for example, a proximity sheet 251 and a proximity pin 252 as a gap forming member having a height of around 0.1 mm, and further a guide guide 253 are provided.
[0058]
In the substrate processing apparatus 440, when the wafer W is heated, the lift pins 235 are lowered as shown in FIG. 8A, and the proximity sheet 251 and the proximity pins 252 are placed on the first plate 231. A wafer W is placed. At this time, the heater built in the first plate 231 is switched on, and the first plate 231 is heated to 400 ° C., for example. When the wafer W is heated, the processing chamber is placed in a low oxygen atmosphere, so that N is supplied from the supply port 241.₂Gas is supplied, and the gas in the processing chamber is exhausted from the exhaust port 243. In addition, supply of gas from the supply ports 242 and 240 is stopped during heating, but supply may be performed.
[0059]
On the other hand, when the wafer W is cooled, as shown in FIG. 8B, the wafer W is positioned approximately at the center between the first plate 231 and the second plate 221 due to the lift pins 235 rising. Placed in. Then, N from the supply port 240 and the supply port 242₂Gas is supplied and this N₂The gas is supplied to the front and back surfaces of the wafer W through the gap 232 provided in the first plate 231 and the gap 222 provided in the second plate 221, and the wafer W is cooled. N through gaps 222, 232₂The gas passes between the first plate 231 and the wafer W and between the second plate 221 and the wafer W and is exhausted from the exhaust port 243. During cooling, N from the supply port 241₂Although supply of gas is stopped, supply may be performed.
[0060]
Thus, since the 1st plate of 2nd Embodiment is formed from the some division | segmentation plate similarly to the plate of 1st Embodiment, even if it passes through a severe temperature change, a plate is hard to be cracked and durability improved. . Further, in the present embodiment, the gap provided in the first plate is N for cooling.₂It also functions as a gap through which gas passes, and N with respect to the wafer W from the gap provided uniformly on the first plate.₂Since the gas is supplied, the wafer W can be uniformly and uniformly cooled in the surface. Further, by providing the second plate in addition to the first plate, the two plates are arranged so as to sandwich the wafer W with a predetermined gap at the time of cooling. Compared to the case where only the first plate is provided, the cooling speed can be improved.
[0061]
In the present embodiment, the position of the gap 232 provided in the first plate 231 and the position of the gap 222 provided in the second plate 221 coincide when the substrate processing apparatus 440 is viewed vertically from the upper surface. It is formed to do. In other words, the projection in which the gap 232 provided in the first plate 231 is projected onto the wafer W and the projection in which the gap 222 provided in the second plate 221 is projected onto the wafer W are in agreement. However, like the substrate processing apparatus 441 shown in FIG. 9, a projection view in which the gap 232 provided in the first plate 231 is projected onto the wafer W, and a gap 262 provided in the second plate 261 is projected onto the wafer W. You may adjust the position of the gap | interval of each plate so that it may be in the state which the projection drawing shifted | deviated. As a result, N₂The gas is supplied to positions slightly deviated on the front surface and the back surface of the wafer W, and the wafer W can be more uniformly cooled in the surface as compared with the substrate processing apparatus of FIG. 9 is a schematic cross-sectional view of a substrate processing apparatus 441 as a modification of FIG. 8, and the same reference numerals are given to the same structures as those of the substrate processing apparatus 441 of FIG.
[0062]
As described above, in the second embodiment, different processes such as the cooling process and the heat process can be performed in the same processing space, so that the entire apparatus can be reduced in size and space can be saved. In the second embodiment, both the heating process and the cooling process can be performed in one processing chamber, but only the cooling process may be performed.
[0063]
In the above-described embodiment, the plate, the first plate, or the second plate (hereinafter referred to as a plate) is formed from a plurality of strip-shaped divided plates, but is limited to a strip-shaped shape. For example, it may be formed in a polygonal shape. For example, as shown in FIG. 10, the plate 443 may be formed from a plurality of hexagonal divided plates. As shown in FIG. 11, the plate 543 may be formed of a plurality of triangular divided plates. Moreover, as shown in FIG. 12, you may form from several square-shaped division | segmentation plates. As described above, the gas is supplied to the entire surface of the wafer W at the time of the cooling process shown in the second embodiment, etc., by dividing further finely as compared with the above-described embodiment, thereby improving the cooling rate. be able to. Further, in the above-described embodiment, because of the strip shape, stress due to expansion and contraction in the longitudinal direction in the divided plate surface is large, and the stress applied in the divided plate surface tends to be uneven. On the other hand, in the shape of the divided plate shown in FIGS. 10 to 12, since the stress due to repeated expansion and contraction in the surface of each divided plate is in a substantially uniform state, it is more difficult to break and the durability is improved. In particular, in FIGS. 10 to 12, durability is further improved when a hexagonal divided plate having a circular shape is used.
[0064]
13 and 14 are an enlarged plan view and a cross-sectional view of a divided plate portion of a substrate processing apparatus according to the third embodiment of the present invention. In the present embodiment, for example, the film member 46 is attached to the concave portion 48 of the plate and is detachably provided in the gap between the divided plates a to c. This film member 46 has N from the back side of the plate.₂A plurality of holes 46a for supplying gas to the plate surface side are formed. As this membrane member 46, for example, a polyimide film is used.
[0065]
According to the present embodiment, for example, by preparing two or more film members having different diameters of the plurality of holes 46a, they are appropriately exchanged, and N on the wafer₂The amount of gas supply can be controlled.
[0066]
Further, as shown in FIG. 15, for example, the film member 46 may be detachably provided in the gap between the square divided plates shown in FIG.
[0067]
16 and 17 are a plan view and a cross-sectional view of a substrate processing apparatus according to the fourth embodiment. The substrate processing apparatus 60 of this embodiment has a strip-shaped divided plate 61 as in the above embodiments. In this embodiment, instead of the proximity sheet 251 in each of the above embodiments, eight support pins 62 for supporting the wafer W with a predetermined gap from the surface of the plate 61 are provided, for example, near the periphery of the wafer W. Is provided. These support pins 62 are erected on a lower container 219 that is inserted into a gap between the divided plates 61 a to 61 i and supports the divided plate 61. The guide guide 253 is directly fixed on the plate 61.
[0068]
According to the present embodiment, since the wafer W is supported by the support pins 62, the load of the wafer W is not applied to the plate 61. Therefore, the thickness of the plate 61 is thinner than the thickness of the plate of each of the above embodiments. Can be formed. In this embodiment, it can be thinly formed from 0.5 mm to 2.0 mm.
[0069]
Further, since the plate 61 can be formed thinly, the temperature raising time of the plate can be shortened, and the heat capacity can be reduced, contributing to energy saving.
[0070]
Furthermore, N for cooling from the supply port 240₂When cooling the wafer W by supplying gas, N₂Since the gas is supplied to the wafer W through the respective gaps of the thin divided plates 61a to 61i, the thin plate 61 according to the present embodiment can make the distance passing through the gap smaller than the thick plate.₂The gas flow rate can be reduced, contributing to energy saving.
[0071]
FIG. 18 is a plan view of a substrate processing apparatus according to the fifth embodiment of the present invention. The substrate processing apparatus 70 of the present embodiment has strip-shaped divided plates 71a to 71g as in the above embodiments. The relationship between the gaps t1, t2, t3, t4, t5, and t6 of each of the divided plates 71a to 71g is t1 <t2 <t3 <t4 <t5 <t6.
[0072]
As in the above embodiments, N from the right in FIG.₂When supplying gas to the wafer W, N₂As the gas supply goes from the upstream side to the downstream side, N₂Although the gas temperature slightly rises due to the heat from the plates 71a to 71g, according to the present embodiment, the gaps are gradually formed gradually from the upstream divided plate 71a toward the downstream divided plate 71g. Therefore, the flow rate of the gas supplied to the wafer W can be increased toward the downstream side. Therefore, a uniform cooling process can be performed on the entire surface of the wafer W.
[0073]
FIG. 19 is a plan view of a substrate processing apparatus according to the sixth embodiment of the present invention. The substrate processing apparatus 80 of the present embodiment has strip-shaped divided plates 81a to 81g, and the widths of the divided plates 81a to 81g are u1> u2> u3> u4> u5> u6 as shown in the figure. > U7. Further, the gaps of the divided plates 81a to 81g are all the same.
[0074]
According to such a configuration, N₂As the gas supply goes from the upstream side to the downstream side, N₂Although the temperature of the gas slightly rises due to the heat from the plates 81a to 81g, according to the present embodiment, the pitch of each gap is gradually reduced from the upstream divided plate 81a toward the downstream divided plate 81g. Therefore, the flow rate of the gas supplied to the wafer W can be increased toward the downstream side. Therefore, the same effect as the effect in the fourth embodiment is obtained.
[0075]
FIG. 20 is a cross-sectional view of the substrate processing apparatus according to the seventh embodiment. In the substrate processing apparatus 100 of the present embodiment, N from the supply ports 242 and 240 are provided inside the lid 220 and the lower container 219, respectively.₂A rectifying plate 92 as a guide member is disposed so that the gas is efficiently guided to the gap between the divided plates 61. This baffle is N₂It inclines as shown from the upstream side to which the gas is supplied toward the downstream side. The rectifying plate 92 includes N₂A guide vane 95 is further provided for gas rectification.
[0076]
Thus, by arranging the rectifying plate 92 so as to approach the dividing plate 61 toward the downstream side, N₂As the gas supply goes from the upstream side to the downstream side, N₂The temperature of the gas slightly rises due to the heat from the plate, but N supplied to the wafer W₂The gas flow rate can be increased toward the downstream side. Therefore, a uniform cooling process can be performed on the entire surface of the wafer W.
[0077]
Note that the gap between adjacent divided plates is preferably set to 0.5 mm to 3 mm, for example, in order to prevent uneven heating of the wafer in the heat treatment of each embodiment. Here, if the gap is formed to be smaller than 0.5 mm, the plates may come into contact with each other due to thermal expansion of each divided plate, and the plate may be cracked or damaged. It is preferable.
[0078]
The present invention is not limited to the above-described embodiment, and various modifications can be made. For example, the substrate to be processed is not limited to a semiconductor wafer, but may be another substrate such as an LCD substrate. The type of film is not limited to the interlayer insulating film.
[0079]
【The invention's effect】
As described above, according to the present invention, a plate having improved durability against a rapid temperature change can be obtained. In addition, the substrate can be uniformly cooled in the surface.
[Brief description of the drawings]
FIG. 1 is a plan view of an SOD system according to an embodiment of the present invention.
FIG. 2 is a front view of the SOD system shown in FIG.
FIG. 3 is a rear view of the SOD system shown in FIG. 1;
4 is a perspective view of a main wafer transfer mechanism in the SOD system shown in FIG. 1. FIG.
FIG. 5 is a cross-sectional view of the low oxygen cure / cooling treatment station shown in FIG. 5;
6 is a cross-sectional view of the low oxygen cure / cooling treatment station shown in FIG. 5;
7 is a schematic plan view of a plate disposed in a heat treatment chamber of the low oxygen cure / cooling treatment station shown in FIG. 5. FIG.
8A and 8B are schematic cross-sectional views of a substrate processing apparatus according to a second embodiment of the present invention. FIG. 8A shows a state when the wafer W is heated, and FIG. 8B shows a state when the wafer W is cooled. .
9 is a modification of the substrate processing apparatus of FIG.
FIG. 10 is a schematic plan view showing the shape of a plate in another embodiment.
FIG. 11 is a schematic plan view showing the shape of a plate in still another embodiment.
FIG. 12 is a schematic plan view showing the shape of a plate in still another embodiment.
FIG. 13 is a plan view showing a film member between divided plates.
14 is a cross-sectional view of the membrane member shown in FIG.
FIG. 15 is a plan view of a membrane member according to another embodiment.
FIG. 16 is a plan view of a substrate processing apparatus according to a fourth embodiment of the present invention.
17 is a cross-sectional view of the substrate processing apparatus shown in FIG.
FIG. 18 is a plan view of a substrate processing apparatus according to a fifth embodiment of the present invention.
FIG. 19 is a plan view of a substrate processing apparatus according to a sixth embodiment of the present invention.
FIG. 20 is a cross-sectional view of a substrate processing apparatus according to a seventh embodiment of the present invention.
[Explanation of symbols]
46 ... Membrane member
46a ... hole
61a-61i, 71a-71g, 81a-81g ... division | segmentation plate
62 ... support pin
92 ... Rectifying plate
221, 261 ... second plate
231 ... 1st plate
221a-221i, 231a-231i, 261a-261i, 343a-343i ... division plate
222, 232, 262 ... gap
240, 241, 242, ... supply pipe
341 ... Heat treatment chamber
343 ... Hot plate
365 ... Heater
440, 441 ... Substrate processing apparatus
W ... wafer
DCC ... Low oxygen cure / cooling treatment station

Claims (15)

A plate formed with a predetermined gap with respect to a horizontally arranged substrate, divided into a plurality of divided plates with a gap between each other, and a plate formed by being separated;
A heater that heats the substrate held on the plate ;
The plate is composed of a first plate disposed separately below the substrate so as to sandwich the substrate and a second plate disposed separately above the substrate so as to sandwich the substrate,
A lower container supporting the first plate;
A lid that can be raised and lowered to form a space that forms a processing chamber of the substrate together with the lower container;
A side surface of the lid has a first supply port for supplying gas to the upper side of the second plate in the processing chamber, and a gas between the first plate and the second plate in the processing chamber. And a second supply port for supplying
A substrate processing apparatus , wherein a side surface of the lower container is provided with a third supply port for supplying gas to the lower side of the first plate in the processing chamber . The substrate processing apparatus according to claim 1,
The gas supplied above the second plate is supplied to the substrate through a gap between the adjacent divided plates forming the second plate,
The substrate processing apparatus, wherein the gas supplied below the first plate is supplied to the substrate through a gap between adjacent divided plates forming the first plate. In the substrate processing apparatus of Claim 1 or Claim 2,
When the substrate is heat-treated in the processing chamber, a gas is supplied from the second supply port. In the substrate processing apparatus of Claim 1 or Claim 2,
When the substrate is cooled in the processing chamber, gas is supplied from the first supply port and the third supply port. The substrate processing apparatus according to claim 1,
The substrate processing apparatus, wherein an image obtained by projecting the gap in the first plate onto the substrate is different from an image obtained by projecting the gap in the second plate onto the substrate. In the substrate processing apparatus of any one of Claims 1-5 ,
The substrate processing apparatus, wherein the divided plate has a strip shape. In the substrate processing apparatus of any one of Claims 1-5 ,
The substrate processing apparatus according to claim 1, wherein the divided plate has a polygonal shape. The substrate treating apparatus according to any one of claims 1 to 7,
A substrate processing apparatus, comprising: a plurality of support members that are inserted through a gap between the adjacent divided plates and hold the substrate with the predetermined gap. In the substrate processing apparatus of any one of Claims 1-8 ,
The substrate processing apparatus, wherein the plate has a thickness of 0.5 mm to 2.0 mm. The substrate treating apparatus according to any one of claims 1 to 9,
The substrate processing apparatus, wherein a gap between the adjacent divided plates is gradually increased from the upstream side to the downstream side where the gas is supplied. The substrate treating apparatus according to any one of claims 1 to 10,
The substrate processing apparatus, wherein a surface area of the dividing plate is formed so as to gradually decrease from an upstream side to a downstream side to which the gas is supplied. The substrate treating apparatus according to any one of claims 1 to 11,
A substrate processing apparatus, further comprising a film member that is detachably disposed in a gap between the adjacent divided plates and has a plurality of holes. The substrate treating apparatus according to any one of claims 1 to 12,
A substrate processing apparatus, further comprising a guide member disposed on a back surface side of the plate for guiding the supplied gas to a gap between the adjacent divided plates. The substrate processing apparatus according to claim 13 ,
The substrate processing apparatus, wherein the guide member is formed to be inclined so as to gradually approach the plate from the upstream side to the downstream side where the gas is supplied. (A) holding the substrate on a first plate in which a plurality of divided plates are disposed with a gap therebetween;
(B) heat-treating the substrate by heating the first plate;
(C) separating the substrate from the first plate, and supplying a cooling gas to the substrate through the gap .
A second plate in which a plurality of divided plates are arranged with a gap therebetween is arranged to face the first plate with the substrate interposed therebetween,
In the step (c), a cooling gas is supplied to the substrate through the gap provided in the second plate .

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