JP5192719B2 - Heating apparatus and substrate processing apparatus - Google Patents

Description

  The present invention relates to a heating apparatus and a substrate processing apparatus.

Conventionally, a CVD (Chemical Vapor Deposition) method is known as one of film forming methods for forming a thin film on a substrate. In order to form a substrate using this CVD method, the substrate is heated to about 200 to 500 ° C. In this case, in consideration of production efficiency, the substrate is heated in advance by a heating device before the substrate is transferred to the film formation chamber. As a heating apparatus, there is known a heating apparatus that includes a cassette on which a substrate is placed and is supported by a lifting shaft so as to be movable in a vertical direction within a heating chamber, and is provided with a heating coil for controlling the temperature of the cassette. (For example, refer to Patent Document 1).
JP 2005-507162 A

  By the way, in the heating apparatus as described in Patent Document 1 described above, as shown in FIG. 8, the first elevating mechanism 72 and the substrate 73 are raised in order to raise and lower the cassettes 71 provided in the heating chamber 70 up and down. And a second lifting mechanism 75 for the hook 74. In this heating apparatus, a robot arm (not shown) having a substrate 73 moves between the cassettes 71 and then raises the hook 74 to receive the substrate 73. Thereafter, the arm is pulled out, the hook 74 is lowered, and the substrate 73 is placed on the cassette 71. Further, in order to receive the next substrate 73 in the heating chamber 70, the cassette 71 is raised or lowered by the first lifting mechanism 72, and the empty cassette 71 is moved to the pass line of the robot.

  Thus, in patent document 1, while the raising / lowering mechanism was provided in the heating apparatus and the cassette was raised / lowered up and down, there existed a problem that a heating apparatus will enlarge. In particular, in recent years, since the size of the substrate has been increased, there has been a problem that the heating device is further increased in size. Furthermore, due to the increase in size of the substrate, there is a problem that the substrate is greatly bent when the substrate is supported by the hook.

  Therefore, the present invention has been made in view of the above-described circumstances, and provides a heating apparatus and a substrate processing apparatus that can suppress the increase in size of the apparatus and can cope with the increase in size of the substrate. .

According to the first aspect of the present invention, there is provided a substrate heating chamber having an opening on a side surface through which a substrate can be carried in and out, a flat plate-like first heater installed in the substrate heating chamber, and the first heater A substrate heating unit having a plurality of substrate support pins attached to the upper surface, wherein the plurality of substrate heating units are stacked in a vertical direction and fixedly disposed; and disposed adjacent to the substrate heating chamber. A substrate transfer robot configured to be able to take in and out the substrate with respect to the substrate heating unit, and to be moved up and down, and in the substrate heating chamber, the opening located on the wall surface on the substrate transfer robot side. A door member that opens and closes, and the opening is arranged for each of the plurality of substrate heating units ,
Wherein the upper portion of the substrate support pin rollers are provided, characterized that you have been arranged along the direction directed to each of the substrate support pins from the center of the substrate rotating direction of the roller is placed It is a heating device.

With this configuration, the substrate heating unit is fixed, and the substrate transfer robot moves in the vertical direction, so that all the substrates arranged for each of the plurality of substrate heating units are carried in and out through the openings. Therefore, there is no need to secure a space for raising and lowering the substrate heating unit, and there is an effect that an increase in the size of the heating device can be suppressed.
Further, since the substrate is placed on the plurality of substrate support pins, the substrate transport robot can move between the substrate and the first heater. Therefore, there is an effect that the substrate can be reliably delivered.
Furthermore, since the door member can shield the area where the substrate transfer robot is disposed and the substrate heating chamber, maintenance can be performed for each area. Therefore, there is an effect that maintenance can be performed efficiently.

The invention described in claim 2 is provided with a reflector installed on the inner wall surface of the substrate heating chamber, and a heat reflecting member mounted on the surface of the door member on the substrate heating portion side. It is said.
With such a configuration, it is possible to hold the substrate heating chamber during board heat efficiently to a high temperature, there is an effect that can be reliably heat the substrate in a short time.

The invention described in claim 3 is characterized in that the first heater arranged to face the substrate is formed by connecting a plurality of small heaters.
By configuring in this way, even if the substrate is enlarged, it is not necessary to enlarge the first heater accordingly. Therefore, the amount of deflection due to the weight of the heater can be suppressed, and the substrate can be reliably heated to a desired temperature. As a result, there is an effect that it is possible to reliably cope with an increase in the size of the substrate.
In addition, since the first heater can be easily taken in and out of the substrate heating chamber, the maintenance can be efficiently performed.

The invention described in claim 4 is characterized in that the first heater is supported by a frame member disposed at a peripheral portion of the first heater.
By comprising in this way, there exists an effect which can suppress the bending of a 1st heater and can prevent the failure | damage of a 1st heater. Moreover, since only the peripheral part of the first heater is supported, there is an effect that the radiant heat from the first heater can be efficiently transmitted to the substrate side. In addition, since a small heater having an appropriate size can be reliably placed by the frame member, there is an effect that it is possible to cope with an increase in the size of the substrate.

The invention described in claim 5 is characterized in that a second heater is provided on the substrate transport robot side of the first heater.
With this configuration, the temperature on the substrate transfer robot side where the temperature drop is most likely to occur at the periphery of the first heater can be independently controlled, so that the entire substrate surface can be heated more reliably and uniformly. There is an effect that can.

The invention described in claim 6 is characterized in that the second heater is configured to be capable of being held at a higher temperature than the first heater.
With this configuration, the temperature distribution of the radiant heat from the first heater and the second heater can be made substantially uniform in a plan view, so that the entire surface of the substrate can be heated uniformly.

The invention described in claim 7 is characterized in that a nitrogen gas supply section is provided in the substrate heating chamber.
The invention described in claim 8, wherein said first heater, wherein the Rukoto that Yusuke a plate member consisting of two superimposed was carbon, and a sheath heater which is sandwiched between the plate-like member .
A ninth aspect of the invention includes the heating apparatus according to any one of the first to eighth aspects, wherein a substrate transfer chamber in which a substrate transfer robot is accommodated is provided, and the substrate transfer chamber includes a substrate. A substrate processing chamber for performing processing on the substrate is connected, and the substrate transfer robot is configured to transfer the substrate between the substrate heating chamber included in the heating apparatus and the substrate processing chamber. It is a feature.
With such a configuration, the substrate processing apparatus can be configured using an existing substrate transfer robot, so that there is an effect that can be realized without cost. Further, there is an effect that can be realized without increasing the installation area of the substrate processing apparatus.

According to the present invention, since the substrate heating unit is fixed and the substrate transfer robot moves up and down, the substrate is taken in and out, so that it is not necessary to secure a space for raising and lowering the substrate heating unit. Can be prevented from increasing in size.
Further, by configuring the first heater by connecting the small heaters, it is not necessary to increase the size of the first heater in accordance with the size of the substrate. Therefore, the amount of deflection due to the weight of the heater can be suppressed, and the substrate can be reliably heated to a desired temperature. As a result, it is possible to reliably cope with an increase in the size of the substrate.

  Next, an embodiment of the present invention will be described with reference to FIGS. In each drawing used for the following description, the scale of each member is appropriately changed to make each member a recognizable size.

(Deposition system)
FIG. 1 is a schematic configuration diagram of a film forming apparatus in the present embodiment.
As shown in FIG. 1, a film forming apparatus (substrate processing apparatus) 1 receives a substrate from another apparatus, and transfers the substrate after film formation to another apparatus, and a substrate. Substrate heating chamber 5 for heating the substrate, a plurality of film forming chambers 7 (four chambers in this embodiment) for forming a thin film on the substrate, and a substrate transfer robot provided with a substrate transfer robot for transferring the substrate It is comprised with the chamber 9. The film forming apparatus 1 is configured as a single wafer cluster apparatus in which the load lock chamber 3, the substrate heating chamber 5, and the film forming chamber 7 are arranged so as to correspond to the hexagonal sides with the substrate transfer chamber 9 as the center. Has been.

The load lock chamber 3 is configured so that a substrate transferred from another apparatus can be placed, and a substrate on which film formation has been completed can be placed and further transferred to another apparatus. The substrate is configured to be supported by substrate support pins. Furthermore, a vacuum pump (not shown) is connected to the load lock chamber 3 so that it can be maintained in a vacuum state.
The film forming chamber 7 is provided with various apparatuses for forming a film on the substrate surface. Since four deposition chambers 7 are provided, throughput per substrate can be shortened.

  The substrate transfer chamber 9 is provided with a substrate transfer robot (to be described later) configured to place a substrate and transfer between the chambers. The substrate transfer robot is formed with a robot arm configured to be movable in the horizontal direction and the vertical direction.

(Heating device)
FIG. 2 is a schematic configuration diagram (plan view) of the heating device in the present embodiment, and FIG. 3 is a schematic configuration diagram (side view) of the heating device.
As shown in FIGS. 2 and 3, the heating apparatus 10 includes a substrate heating chamber 5 in which an opening 13 through which a substrate 11 can be carried in and out is formed on a side surface 15. In the substrate heating chamber 5, a substrate heating unit 24 including a heater (first heater) 21 for heating the substrate 11 and substrate support pins 23 for placing the substrate 11 is provided. A plurality of substrate heating units 24 are provided and constitute a substrate heating unit 30.

FIG. 4 is a side sectional view of the heater 21.
As shown in FIG. 4, the heater 21 is configured by superposing two plate-like members 25 made of carbon and sandwiching a sheath heater 26 between the plate-like members 25. The heater 21 is configured to be heated by applying a voltage to the sheath heater 26 from a power supply device (not shown). And it is comprised so that the board | substrate 11 can be heated with the radiant heat from the heated heater 21. FIG. By setting the thickness of the heater 21 in the vertical direction so that the heater 21 does not bend due to its own weight, the number of heaters 21 installed in the vertical direction can be increased. That is, the number of substrates 11 that can be placed can be increased.

  2 and 3, the heaters 21 of the substrate heating unit 30 are provided in multiple stages in the front view (vertical direction) (four stages in the present embodiment). A plurality of heaters 21 are arranged in the longitudinal direction of the substrate 11 in a plan view (horizontal direction) (three in this embodiment). That is, the heater 21 is configured by connecting the small heaters 21a in a plan view, and the size of the small heaters 21a is smaller than the area of the substrate 11, and the total size of the combined heaters is as follows. The substrate 11 is configured to cover the entire surface.

FIG. 5 is a partial side view showing a state where the heater 21 is placed in the substrate heating chamber 5.
As shown in FIG. 5, the heater 21 is disposed in the substrate heating chamber 5 with the peripheral edge supported by the frame member 31. The frame member 31 is made of stainless steel, for example, and has a substantially L shape. Further, a frame member 31 is provided so as to support the front and back peripheral portions of the small heater 21a in the substrate loading / unloading direction. The heater 21 is configured to be mounted on and supported by the frame member 31 from above. The frame member 31 has a strength capable of supporting the load of the heater 21. The frame member 31 may be provided to support the entire circumference of the small heater 21a.

The board | substrate 11 is comprised so that mounting is possible between the heaters 21 provided in multiple stages. That is, the three substrates 11 are configured to be placed in the substrate heating chamber 5.
Further, the substrate 11 is placed on the substrate support pins 23. A plurality of substrate support pins 23 are attached to the upper surface of the heater 21, and are attached at appropriate positions so as to minimize the bending due to the weight of the substrate 11 when the substrate 11 is placed. The substrate support pins 23 are provided at positions where they do not interfere with the robot arm 51 of the substrate transport robot 50 in plan view.

6A and 6B are configuration diagrams of the substrate support pins 23, where FIG. 6A is a front view and FIG. 6B is a side view.
As shown in FIG. 6, the substrate support pin 23 includes a support 27 attached on the heater 21 and a roller 28 provided on the support 27. The roller 28 is configured to be rotatable about its central axis 29. By placing the substrate 11 on the roller 28, it is possible to prevent the substrate 11 from being damaged when the substrate 11 is thermally expanded by heating.

FIG. 7 is a plan layout view of the substrate support pins.
As shown in FIG. 7, each substrate support pin 23 is arranged so that the rotation direction of the roller 28 extends along the direction from the center of the substrate 11 toward each substrate support pin 23. That is, when the substrate 11 is heated, the substrate support pins 23 are arranged so as to correspond to the direction of thermal expansion of the substrate 11. Further, the substrate support pin 23 a at a position corresponding to the center of the substrate 11 is a fixed pin without the roller 28. With this configuration, even when the substrate 11 is heated, the center position of the substrate 11 does not shift, and when the substrate 11 that has been heated is unloaded (conveyed), the substrate 11 is reliably aligned without being aligned. Can be carried out.

  2 and 3, a reflector 35 is provided on the inner wall surface 33 of the substrate heating chamber 5. The reflector 35 is made of, for example, a stainless steel plate and is provided so as to cover the entire inner wall surface 33. When the substrate 11 is heated by the reflector 35, the radiant heat from the heater 21 can be efficiently reflected into the substrate heating chamber 5, and the substrate 11 can be efficiently heated.

  Here, an auxiliary heater 41 is provided at a position corresponding to the outer peripheral portion of the heater 21 and the outer peripheral portion of the substrate 11. The auxiliary heater 41 includes a first auxiliary heater 41a disposed on the front side of the substrate 11 in the loading / unloading direction and second auxiliary heaters 41b disposed on both sides of the substrate 11 in the loading / unloading direction.

  The first auxiliary heater 41 a is provided extending from the heater 21. An insulating material (not shown) may or may not be provided between the heater 21 and the first auxiliary heater 41a. The second auxiliary heater 41 b is provided so as to cover the side surface of the substrate transfer chamber 5 in the gap between the side surfaces of the substrate transfer chamber 5 and the heater 21. Further, the first auxiliary heater 41a and the second auxiliary heater 41b are configured to be able to individually control the temperature. An auxiliary heater may be provided between the heater 21 and the side surface of the substrate transfer chamber 5 on the back side in the carry-in / out direction of the substrate 11.

  A shutter 45 configured to be able to open and close the opening 13 is provided in the opening 13 of the substrate heating chamber 5 on the front side in the loading / unloading direction of the substrate 11. Here, the shutter 45 is formed of substantially the same material and structure as the reflector 35. The shutter 45 is configured to be movable up and down. The shutter 45 may have a configuration in which the same stainless steel plate as the reflector 35 is attached to a plate-like member such as a steel plate.

  A substrate transfer chamber 9 is connected to the substrate heating chamber 5. The substrate transfer chamber 9 is provided with a substrate transfer robot 50 that can transfer the substrate 11. A plurality of substrate transfer robots 50 are installed (two in this embodiment). The substrate transfer robot 50 includes a robot arm 51 configured to be movable in a horizontal direction and a vertical direction, and a main body unit 52 including a control unit.

  The robot arms 51 are formed so that the substrate 11 can be placed. In the present embodiment, four robot arms 51 are formed in a plan view. The length of the robot arm 51 in the direction along the loading / unloading direction of the substrate 11 is longer than that of the substrate 11 so that the substrate 11 can be reliably placed on the robot arm 51 and transported. .

  Further, the thickness of the robot arm 51 in the vertical direction is smaller than the height of the substrate support pins 23 provided in the substrate heating chamber 5. By doing so, the substrate 11 is placed on the robot arm 51, transported to the substrate heating chamber 5, and the substrate 11 is transferred to the substrate support pins 23 in the substrate heating chamber 5. 11 can be smoothly transferred from the robot arm 51 onto the substrate support pins without dropping. That is, the substrate 11 can be reliably moved without applying a concentrated load or the like. In addition, since the robot arm 51 can be inserted into the gap between the substrate 11 and the heater 21 formed by the substrate support pins 23 when the substrate 11 is heated from the substrate heating chamber 5 after the substrate 11 is heated. The substrate 11 can be reliably transferred onto the robot arm 51.

  In addition, a nitrogen gas supply unit (not shown) is provided in the substrate heating chamber 5. When nitrogen gas is supplied into the substrate heating chamber 5 from the nitrogen gas supply unit, the temperature increase rate of the substrate 11 can be increased. At this time, the pressure in the substrate heating chamber 5 can be maintained at about 100 Pa.

  Further, an exhaust port 53 is formed in the substrate transfer chamber 9. The exhaust port 53 is formed in the vicinity of the boundary between the substrate transfer chamber 9 and the substrate heating chamber 5. The exhaust port 53 can exhaust the inside of the substrate transfer chamber 9 and can exhaust the inside of the substrate heating chamber 5 when the shutter 45 is held open. By doing in this way, it is not necessary to provide exhaust means in the substrate heating chamber 5, and the cost can be reduced. Further, since the high-temperature nitrogen gas flowing out from the substrate heating chamber 5 to the substrate transfer chamber 9 is discharged from the exhaust port 53 before reaching the substrate transfer robot 50, the high-temperature nitrogen gas has an adverse effect on the substrate transfer robot 50. Can be prevented.

(Function)
Next, an operation when a film is formed on the substrate 11 using the film forming apparatus 1 will be described.
In order to form a thin film on the surface of the substrate 11 using the film forming apparatus 1 having the above configuration, the substrate 11 transported to the load lock chamber 3 is held in a vacuum state, and the substrate transport robot 50 performs the substrate 11. Is taken out into the substrate transfer chamber 9. At this time, the substrate 11 is placed on the robot arm 51.

  While the substrate 11 is placed, the robot arm 51 is rotated in the horizontal direction, and the substrate 11 is transferred to the substrate heating chamber 5 while being moved in the vertical direction. Since the substrate heating chamber 5 is configured to be able to arrange the substrates 11 in three stages, the height of the robot arm 51 is adjusted according to the position where the substrate 11 is placed.

  After the robot arm 51 is adjusted to an appropriate height, the robot arm 51 on which the substrate 11 is placed is moved into the substrate heating chamber 5. At this time, the robot arm 51 is inserted into the substrate heating chamber 5 so that the robot arm 51 does not interfere with the substrate support pins 23. When the center of the substrate 11 in plan view is arranged so as to be located above the central substrate support pin 23a among the plurality of substrate support pins 23, the movement of the robot arm 51 in the horizontal direction is stopped. .

  After the horizontal position of the substrate 11 is determined, the robot arm 51 is moved downward to bring the lower surface of the substrate 11 into contact with the upper end of the roller 28 of the substrate support pin 23. When the substrate 11 is placed on the substrate support pin 23 of the substrate heating unit 24, the robot arm 51 is moved so as to be pulled out from the substrate heating chamber 5 of the substrate heating chamber 5. At this time, the robot arm 51 is pulled out while being held at a position where it does not contact the substrate 11 and the heater 21.

  When the substrate 11 is placed in the substrate heating chamber 5, heating of the substrate 11 is started. The substrate 11 is heated to about 200 to 500 ° C. The substrate 11 is heated by the radiant heat of the heater 21 disposed so as to face the upper and lower surfaces thereof. Here, when the substrate 11 is heated, if the shutter 45 is closed, the heat in the substrate heating chamber 5 does not leak to the substrate transfer chamber 9 side, and the substrate 11 can be efficiently heated. it can. In addition, since the influence of heat on the substrate transfer robot 50 is eliminated, the operation accuracy of the substrate transfer robot 50 can be maintained and the life can be extended.

  Furthermore, since the first auxiliary heater 41a and the second auxiliary heater 41b are provided not only in the heater 21 but also in the peripheral portion of the heater 21, the temperature distribution does not drop in the peripheral portion of the heater 21, and the substrate 11 is heated almost uniformly. can do. Further, since the reflector 35 is provided on the inner wall surface 33 of the substrate heating chamber 5, the radiant heat from the heater 21 and the auxiliary heater 41 can be applied toward the substrate 11.

  Then, when the substrate 11 is heated, thermal expansion of the substrate 11 occurs. Here, a roller 28 is provided on the substrate support pin 23 that is in contact with the lower surface of the substrate 11, and the roller 28 rotates in the same direction as the direction from the center of the substrate 11 to each substrate support pin 23. I did it. Further, the substrate support pin 23a at the position corresponding to the center of the substrate 11 is not provided with the roller 28 but is a fixed pin. With such a configuration, even when the substrate 11 is heated, the center of the substrate 11 is not displaced, and the substrate 11 can be radially extended from the center of the substrate 11. Furthermore, since the lower surface of the substrate 11 is in contact with the roller 28, it is possible to suppress the occurrence of scratches due to thermal expansion on the lower surface of the substrate 11.

  When the heating of the substrate 11 is completed, the shutter 45 is opened, and the robot arm 51 is moved from the opening 13 into the substrate heating chamber 5. The robot arm 51 is moved so as to be inserted into the gap between the lower surface of the substrate 11 and the upper surface of the heater 21. When the tip of the robot arm 51 moves from the peripheral edge of the substrate 11 in the substrate loading / unloading direction in the plan view to the back side, the robot arm 51 is then moved upward to place the substrate 11 on the robot arm 51. . When the substrate 11 moves to a position away from the upper end of the roller 28 of the substrate support pin 23, the robot arm 51 is moved in the horizontal direction so as to be pulled out from the substrate heating chamber 5. If the substrate 11 is unloaded from the substrate heating chamber 5 while being exhausted from the exhaust port 53 of the substrate transfer chamber 9, the influence of heat on the main body 52 of the substrate transfer robot 50 can be reduced, and the substrate transfer can be performed. The operation accuracy of the robot 50 can be maintained.

Returning to FIG. 1, the substrate 11 unloaded from the substrate heating chamber 5 is transferred to the film forming chamber 7 by the substrate transfer robot 50 while being kept at a high temperature. In the film formation chamber 7, film formation is performed on the substrate 11 using a CVD method or the like. When film formation on the substrate 11 is completed, the substrate 11 is transferred to the load lock chamber 3 by the substrate transfer robot 50. The substrate 11 placed in the load lock chamber 3 is unloaded and changed from a vacuum state to an atmospheric pressure.
Then, the substrate 11 on which film formation has been completed is taken out from the load lock chamber 3 by a transfer device (not shown), and the substrate 11 is transferred to another device (next process).

(Example)
The case where a film is formed on the substrate 11 using the above-described film forming apparatus 1 will be specifically described.
When the temperature of the heater 21 in the substrate heating chamber 5 is set to 350 ° C., it takes 300 seconds to raise the temperature of the substrate 11 to 320 ° C. In the substrate heating chamber 5 of the present embodiment, since the substrate heating units are provided in three stages, the substrates are sequentially taken in and out of different substrate heating units every 100 seconds. In this case, the throughput per substrate 11 by the substrate heating chamber 5 is 100 seconds / sheet. The process time in the film forming chamber 7 is 400 seconds. In this embodiment, since four single-wafer type film forming chambers 7 are provided, the substrates are sequentially taken into and out of the different film forming chambers 7 every 100 seconds. In this case, the throughput per substrate by all the film forming chambers 7 is 100 seconds / substrate.
Therefore, when the substrate 11 is formed using the film forming apparatus 1 of this embodiment, the substrate 11 is formed at a rate of one sheet every 100 seconds.

  On the other hand, when heating and film formation are performed in the film formation chamber 7 without providing the substrate heating chamber 5, it takes 300 seconds of heating time + 400 seconds of process time = 700 seconds per chamber. Even if four film forming chambers are provided as in this embodiment, the throughput per substrate is 700/4 = 175 seconds / substrate, which is inefficient. Further, even if five film forming chambers are provided, the throughput per substrate is 140 seconds / sheet.

  According to this embodiment, the substrate heating unit 24 having the flat heater 21 and the plurality of substrate support pins 23 erected on the surface of the heater 21, and the plurality of substrate heating units 24 are stacked in the vertical direction. The substrate heating unit 30 that is fixedly disposed, and the substrate transport robot 50 that is disposed adjacent to the substrate heating unit 30 and that can move the substrate 11 in and out of the substrate heating unit 30 and can be moved up and down in the vertical direction. And provided.

Since it comprised in this way, the board | substrate heating part 30 is fixed, the board | substrate conveyance robot 50 moves up and down, the board | substrate 11 is taken in / out, and it becomes unnecessary to secure the space for raising / lowering the board | substrate heating unit 24, The enlargement of the heating device 10 can be suppressed.
In addition, since the substrate 11 is placed on the plurality of substrate support pins 23, the robot arm 51 of the substrate transport robot 50 can move between the substrate 11 and the heater 21. Therefore, the delivery of the substrate 11 can be performed reliably.

Further, a substrate heating chamber 5 in which the substrate heating unit 30 is accommodated, and a shutter 45 that opens and closes the opening 13 of the side surface 15 on the substrate transfer robot 50 side in the substrate heating chamber 5 are provided, and the shutter 45 functions as the reflector 35. Configured to do.
Since it comprised in this way, between the substrate conveyance chamber 9 and the substrate heating chamber 5 in which the substrate conveyance robot 50 is arrange | positioned can be shielded by the shutter 45, and a maintenance can be performed for each chamber. Therefore, efficient maintenance can be performed.
Further, by providing the shutter 45 with the function of the reflector 35, the substrate heating chamber 5 can be efficiently held at a high temperature when the substrate 11 is heated, and the substrate 11 can be reliably heated in a short time. .

Further, the heater 21 arranged so as to face the substrate 11 is formed by connecting a plurality of small heaters 21a.
Since it comprised in this way, even if the board | substrate 11 enlarges, it becomes unnecessary to enlarge the heater 21 according to it. Therefore, the amount of bending due to the weight of the heater can be suppressed, and the substrate 11 can be reliably heated to a desired temperature. As a result, it is possible to reliably cope with an increase in the size of the substrate 11.
Moreover, since the small heater 21a can be easily taken in and out of the substrate heating chamber 5 at the time of maintenance of the heater 21, maintenance can be performed efficiently.

In addition, the heater 21 is configured to be supported by a frame member 31 disposed at the peripheral edge of the heater 21.
Since it comprised in this way, the bending of the heater 21 can be suppressed and damage to the heater 21 can be prevented. Moreover, since only the peripheral part of the heater 21 is supported, the radiant heat from the heater 21 can be efficiently transmitted to the substrate 11 side. In addition, since the small heater 21 a having an appropriate size can be reliably placed by the frame member 31, the substrate 11 can be increased in size.

In addition, the second auxiliary heater 41b is provided so as to cover the side surface of the substrate heating unit 30 (the gap between the side surfaces of the substrate transfer chamber 5 and the heater 21 and the side surface of the substrate transfer chamber 5).
By configuring in this way, it is possible to suppress a drop in the temperature distribution at the peripheral edge of the heater 21, so that the entire surface of the substrate 11 can be heated substantially uniformly.

In addition, a first auxiliary heater 41a is provided on the peripheral portion of the heater 21 on the substrate transport robot 50 side.
With this configuration, it is possible to independently control the temperature on the substrate transport robot 50 side at which the temperature is most likely to decrease at the peripheral portion of the heater 21, so that the entire surface of the substrate 11 can be heated more reliably and uniformly. it can.

Further, the first auxiliary heater 41 a is configured to be held at a higher temperature than the heater 21.
Since it comprised in this way, since the temperature distribution of the radiant heat from the heater 21 and the 1st auxiliary heater 41a can be made substantially uniform in planar view, the board | substrate 11 whole surface can be heated uniformly.

Further, a substrate transfer chamber 9 in which the substrate transfer robot 50 is accommodated is provided, and the substrate transfer chamber 9 is connected to the load lock chamber 3 and the film formation chamber 7 for performing processing on the substrate 11. The substrate 11 can be transported among the load lock chamber 3, the substrate heating chamber 5 and the film forming chamber 7.
Since it comprised in this way, since the film-forming apparatus 10 can be comprised using the existing board | substrate conveyance robot, it can implement | achieve without expense. Further, this can be realized without increasing the installation area of the film forming apparatus 10.

  In addition, since the film-forming apparatus 10 in the above-mentioned embodiment can simplify an apparatus structure compared with the case where a heating mechanism is integrated in the film-forming chamber 7 including an RF power source and a vacuum pump, it does not cost. Can be realized. Further, by separating the heating mechanism from the film formation chamber 7 and providing it in the substrate heating chamber 5, throughput can be improved depending on conditions such as process time for the substrate 11.

It should be noted that the technical scope of the present invention is not limited to the above-described embodiment, and includes those in which various modifications are made to the above-described embodiment without departing from the spirit of the present invention. That is, the specific materials, configurations, and the like given in the embodiment are merely examples, and can be changed as appropriate.
For example, in the present embodiment, the case where the exhaust port is formed only on the transfer chamber side has been described, but the exhaust port may also be formed on the heating device side.
In the present embodiment, the case where the shutter is provided in the heating device has been described. However, the opening on the substrate transport robot side may be always opened without providing the shutter.
Moreover, in this embodiment, although the case where the auxiliary heater was provided in the peripheral part of the 1st heater was demonstrated, you may provide in the state which connected the heat exchanger which does not have a heater function to the 1st heater.
Furthermore, in this embodiment, the case where the substrate support pin having a roller rotatable in one direction has been described, but the structure of the substrate support pin is not limited to the structure of the above-described embodiment, and other structures are used. There may be. For example, a structure using a sphere instead of a roller may be used.

It is a schematic block diagram of the film-forming apparatus in embodiment of this invention. It is a schematic block diagram (plan view) of the heating device in the embodiment of the present invention. It is a schematic block diagram (side view) of the heating apparatus in embodiment of this invention. It is a side view of the heater in the embodiment of the present invention. It is a partial side view which shows the mounting state of the heater in the substrate heating chamber in embodiment of this invention. It is a schematic block diagram of the board | substrate support pin in embodiment of this invention, (A) is a front view, (B) is a side view. Substrate support pin in an embodiment of the present invention It is a schematic block diagram which shows the conventional heating apparatus.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 5 ... Substrate heating chamber 10 ... Heating device 11 ... Substrate 13 ... Opening 21 ... Heater (first heater) 23 ... Substrate support pin 24 ... Substrate heating unit 30 ... Substrate heating unit 31 ... Frame member 41 ... Auxiliary heater (heat transfer) Body, heating element) 41a ... first auxiliary heater (second heater) 45 ... shutter (door member) 50 ... substrate transfer robot 51 ... robot arm

Claims (9)

A substrate heating chamber having an opening on a side surface to allow loading and unloading of the substrate;
Placed inside the substrate heating chamber, a flat first heater has a substrate heating unit having a plurality of substrate support pins attached to the upper surface of the first heater, a plurality of the substrate heating unit is vertically A substrate heating unit laminated in a direction and fixedly arranged;
A substrate transfer robot that is arranged adjacent to the substrate heating chamber, is capable of taking in and out the substrate with respect to the substrate heating unit, and can be moved up and down;
In the substrate heating chamber, comprising a door member that opens and closes the opening located on the wall surface on the substrate transport robot side,
The opening is arranged for each of the plurality of substrate heating units ,
Wherein the upper portion of the substrate support pin rollers are provided, characterized that you have been arranged along the direction directed to each of the substrate support pins from the center of the substrate rotating direction of the roller is placed Heating device. A reflector installed on the inner wall surface of the substrate heating chamber;
The heating apparatus according to claim 1, further comprising: a heat reflecting member mounted on a surface of the door member on the substrate heating unit side.   The heating apparatus according to claim 1, wherein the first heater disposed to face the substrate is formed by connecting a plurality of small heaters.   The heating apparatus according to any one of claims 1 to 3, wherein the first heater is supported by a frame member disposed at a peripheral portion of the first heater.   The heating apparatus according to any one of claims 1 to 4, wherein a second heater is provided on the substrate transport robot side of the first heater.   The heating device according to claim 5, wherein the second heater is configured to be able to be held at a higher temperature than the first heater. Heating apparatus according to any one of claims 1 to 6, characterized in that the nitrogen gas supply unit to the substrate heating chamber is provided. Wherein the first heater is a plate-like member made of two superimposed is carbon, claims 1 to 7 any of characterized Rukoto which have a a sheath heater which is sandwiched between the plate-like member The heating device according to Item. It has a heating device according to any one of claims 1 to 8 ,
A substrate transfer chamber in which the substrate transfer robot is accommodated is provided,
A substrate processing chamber for processing a substrate is connected to the substrate transfer chamber,
The substrate processing apparatus, wherein the substrate transfer robot is configured to transfer the substrate between a substrate heating chamber included in the heating apparatus and the substrate processing chamber.

Images