JP3623134B2 - Substrate processing equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate-treating device which can quickly perform treatment for obtaining desired characteristics, while the device suppresses the contamination by particles to the utmost. SOLUTION: When a wafer W is delivered from a main wafer transfer mechanism 22 into a heat treatment chamber 51, the air pressure in the chamber 51 is made higher than the air pressure on the transfer mechanism 22 side by blowing nitrogen gas into the chamber 51. Thereafter, a hermetically sealed space for heat treatment is formed in the chamber 51, and heat treatment is performed on the wafer W, by stopping the blown-out nitrogen gas and setting the inside of the chamber 51 at an air pressure which is lower than the atmospheric pressure by starting a vacuum pump 70.

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention belongs to a technical field such as semiconductor device manufacturing, and more particularly to a substrate processing apparatus for heat-processing a semiconductor wafer coated with an insulating film material, for example.
[0002]
[Prior art]
In the semiconductor device manufacturing process, for example, an interlayer insulating film is formed by an SOD (Spin on Dielectric) system. In this SOD system, a coating film is spin-coated on a wafer by a sol-gel method, a silk method, a speed film method, a Fox method, etc., and an interlayer insulating film is formed by performing chemical treatment or heat treatment. Yes.
[0003]
For example, when an interlayer insulating film is formed by a sol-gel method, an insulating film material such as a colloid of TEOS (tetraethoxysilane) is first dispersed in an organic solvent on a semiconductor wafer (hereinafter referred to as “wafer”). Supply the solution. Next, the wafer supplied with the solution is subjected to gelation, and then the solvent is replaced. Then, the wafer with the solvent replaced is subjected to a heat treatment.
[0004]
As one of the systems for forming such an interlayer insulating film, for example, a configuration in which a plurality of processing stations for performing each of the above-described processes is integrally arranged along a transfer path on which a transfer apparatus for transferring a wafer travels is proposed. Has been.
[0005]
In addition, it is well known that this type of system is arranged in a clean room in order to prevent particles from adhering to the wafer. However, in this type of system, for example, a large part of the transport path on which the transport device runs is used. It is set to an atmosphere of higher atmospheric pressure than the clean room set at atmospheric pressure, thereby discharging particles generated on the conveyance path outside the system, while preventing particles in the clean room from entering the system ing.
[0006]
[Problems to be solved by the invention]
By the way, the present inventors have proposed a heat treatment apparatus for heat-treating a wafer under reduced pressure in the system configured as described above. According to the heat treatment apparatus having such a configuration, it has been confirmed that a wafer can be quickly heat-treated, and a uniform porous interlayer insulating film having a high dielectric constant can be obtained.
[0007]
However, when a wafer is transferred between the heat treatment apparatus configured as described above and the transfer apparatus, a considerable amount of gas is present in the heat treatment apparatus that has been in a reduced pressure state from the transfer path side in an atmosphere higher than atmospheric pressure. As a result, a new problem has arisen that cannot be conceived from the past that the inside of the heat treatment apparatus is considerably contaminated by particles generated from the conveying path.
[0008]
The present invention has been made based on such circumstances, and an object of the present invention is to provide a substrate processing apparatus that can quickly perform a process for obtaining desired characteristics while suppressing contamination by particles as much as possible.
[0009]
In order to solve such a problem, a substrate processing apparatus of the present invention is arranged in an atmosphere set higher than atmospheric pressure, and transports the substrate, and the substrate is carried in and out by the transport device, and the substrate is heated. A heat treatment chamber, A cooling treatment chamber disposed adjacent to the heat treatment chamber and passing the substrate between the transfer device and the heat treatment chamber; When delivering a substrate between the transfer device and the heat treatment chamber, a predetermined gas is introduced into the heat treatment chamber to set the pressure inside the heat treatment chamber to a pressure higher than the pressure on the transfer device side, When the substrate is heat-treated in the heat treatment chamber, an atmospheric pressure control mechanism is provided to make the pressure in the heat treatment chamber lower than atmospheric pressure.
[0010]
In the present invention, since the substrate is heat-treated in the heat treatment chamber at a pressure lower than atmospheric pressure, the substrate can be quickly heat-treated, and the desired characteristics, for example, when an interlayer insulating film is formed on the wafer Can obtain a uniform porous with a high dielectric constant. In the present invention, when the substrate is transferred between the transfer device and the heat treatment chamber, a predetermined gas is introduced into the heat treatment chamber, and the heat treatment chamber is set to a pressure higher than the pressure on the transfer device side. Therefore, the particles are not caught in the heat treatment chamber from the conveying device side, and the heat treatment can be performed with the contamination by the particles suppressed as much as possible.
[0012]
According to such a configuration, the substrate after the heat treatment can be cooled without passing through the transfer device, and the cooling processing chamber for performing such cooling receives the substrate through the heat treatment chamber with the transfer device. Since it is arranged so as to pass, the particles on the transfer device side hardly enter the cooling processing chamber, and the cooling processing can be performed quickly while suppressing contamination by particles as much as possible.
[0013]
According to an aspect of the present invention, the atmospheric pressure control mechanism is configured to set an atmospheric pressure lower than an atmospheric pressure for the cooling processing chamber. Thereby, a cooling process can be performed rapidly and uniformly.
[0014]
According to an aspect of the present invention, the atmospheric pressure control mechanism sets the heat treatment chamber and / or the cooling treatment chamber to an atmospheric pressure of about 0.1 torr as an atmospheric pressure lower than the atmospheric pressure. . Thereby, heat processing and cooling processing can be performed rapidly and uniformly.
[0015]
According to one aspect of the present invention, the gas introduced into the heat treatment chamber and / or the cooling treatment chamber contains at least an inert gas. Thereby, the gas blown out from the heat treatment chamber or the cooling treatment chamber to the transfer device side does not adversely affect the transfer device side.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings.
In this embodiment, the substrate processing apparatus of the present invention is applied to an SOD (Spin on Dielectric) processing system for forming an interlayer insulating film on a wafer. 1 to 3 are views showing the overall configuration of the SOD processing system. FIG. 1 is a plan view, FIG. 2 is a front view, and FIG. 3 is a rear view.
[0017]
In the SOD processing system 1, a plurality of semiconductor wafers (hereinafter referred to as wafers) W as substrates are loaded into the system from the outside in units of 25 wafer wafers CR, for example, 25 wafers, or unloaded from the system. On the other hand, a cassette block 10 for loading / unloading the wafer W and various single-wafer processing stations for performing predetermined processing on the wafer W one by one in the SOD coating process are arranged in multiple stages at predetermined positions. The processing block 11 and the cabinet 12 provided with a bottle of ammonia water, a bubbler, a drain bottle and the like required in the aging process are integrally connected.
[0018]
In the cassette block 10, as shown in FIG. 1, a plurality of, for example, up to four wafer cassettes CR are arranged in a row in the X direction with each wafer inlet / outlet facing the processing block 11 side at the position of the protrusion 20 a on the cassette mounting table 20. A wafer carrier 21 placed and movable in the cassette arrangement direction (X direction) and in the wafer arrangement direction (Z vertical direction) of the wafers stored in the wafer cassette CR selectively accesses each wafer cassette CR. It has become. Further, the wafer carrier 21 is configured to be rotatable in the θ direction, and also accesses a delivery / cooling plate (TCP) belonging to the multi-stage station portion of the third group G3 on the processing block 11 side as will be described later. It can be done.
[0019]
In the processing block 11, as shown in FIG. 1, a vertical transfer type main wafer transfer mechanism 22 as a transfer apparatus is provided at the center, and all the processing stations are arranged in one set or a plurality of sets around it. It is arranged in multiple stages. In this example, there are four sets G1, G2, G3, and G4 multi-stage arrangement, and the first and second sets G1 and G2 multi-stage stations are juxtaposed on the system front side (front side in FIG. 1), The multistage station of the group G3 is arranged adjacent to the cassette block 10, and the multistage station of the fourth group G4 is arranged adjacent to the cabinet 12.
[0020]
As shown in FIG. 2, in the first set G1, a wafer W is placed on a spin chuck in a cup CP, an insulating film material is supplied, and the wafer is rotated to apply a uniform insulating film material on the wafer. An SOD coating processing station (SCT) and a wafer W in a cup CP are placed on a spin chuck, exchange chemicals such as HMDS and heptane are supplied, and the solvent in the insulating film coated on the wafer is removed before the drying process. A solvent exchange processing station (DSE) that performs processing to replace with another solvent is stacked in two stages in order from the bottom.
[0021]
In the second group G2, the SOD coating processing station (SCT) is arranged in the upper stage. If necessary, an SOD coating processing station (SCT), a solvent exchange processing station (DSE), or the like can be arranged below the second group G2.
[0022]
As shown in FIG. 3, in the third group G3, two low oxygen high temperature heat treatment stations (OHP), a low temperature heat treatment station (LHP), two cooling treatment stations (CPL), Cooling plates (TCP) and cooling processing stations (CPL) are arranged in multiple stages in order from the top. Here, the low-oxygen high-temperature heat treatment station (OHP) has a heat plate on which the wafer W is placed in a hermetically sealable processing chamber, and is uniformly N from the outer peripheral hole of the heat plate. ₂ Then, the wafer W is exhausted from the upper center of the processing chamber, and the wafer W is subjected to a high temperature heat treatment in a low oxygen atmosphere. The low temperature heat treatment station (LHP) has a hot plate on which the wafer W is placed, and heats the wafer W at a low temperature. The cooling processing station (CPL) has a cooling plate on which the wafer W is placed, and cools the wafer W. The delivery / cooling plate (TCP) has a two-stage structure having a cooling plate for cooling the wafer W at the lower stage and a delivery table at the upper stage, and delivers the wafer W between the cassette block 10 and the processing block 11.
[0023]
In the fourth group G4, a low temperature heat treatment station (LHP), two low oxygen cure and cooling treatment stations (DCC) as a heat treatment chamber and a cooling treatment chamber according to the present invention, an aging treatment station (DAC), Are arranged in multiple stages from the top. Here, the low oxygen curing and cooling processing station (DCC) has a heat plate and a cooling plate adjacent to each other in a sealable processing chamber, and N ₂ The high-temperature heat treatment is performed in the substituted low oxygen atmosphere, and the heat-treated wafer W is cooled. The aging treatment station (DAC) is a treatment gas (NH, for example) in which ammonia gas and water vapor are mixed in a sealable treatment chamber. ₃ + H ₂ O) is introduced to age the wafer W, and the insulating film material on the wafer W is wet-gelled.
[0024]
FIG. 4 is a perspective view showing an appearance of a main wafer transfer mechanism 22 as a transfer apparatus according to the present invention. The main wafer transfer mechanism 22 is connected to each other at the upper end and the lower end, and a pair of wall portions 25 and 26 facing each other. A wafer transfer device 30 that can move up and down in the vertical direction (Z direction) is provided inside a cylindrical support body 27 made of The cylindrical support 27 is connected to the rotating shaft of the motor 31 and rotates integrally with the wafer transfer device 30 around the rotating shaft by the rotational driving force of the motor 31. Accordingly, the wafer transfer device 30 is rotatable in the θ direction. For example, three tweezers are provided on the transfer base 40 of the wafer transfer apparatus 30. These tweezers 41, 42, 43 all have a form and a size that can pass through the side opening 44 between both wall portions 25, 26 of the cylindrical support 27, and are front and rear along the X direction. It is configured to be freely movable. The main wafer transfer mechanism 22 accesses the processing stations arranged around the tweezers 41, 42, and 43, and transfers the wafer W to and from these processing stations.
[0025]
The SOD processing system 1 is disposed in, for example, a clean room. For example, the atmosphere on the main wafer transfer mechanism 22 is set to a higher atmospheric pressure than the clean room set to atmospheric pressure. The generated particles are discharged out of the SOD processing system 1, while the particles in the clay room are prevented from entering the SOD processing system 1.
[0026]
FIG. 5 is a plan view showing the configuration of a low oxygen cure / cooling treatment station (DCC) having a heat treatment chamber and a cooling treatment chamber according to the present invention, and FIG. 6 is a sectional view thereof.
[0027]
The low oxygen curing / cooling processing station (DCC) has a heat processing chamber 51 and a cooling processing chamber 52 provided adjacent thereto.
[0028]
The heat processing chamber 51 includes a processing chamber main body 53 that is open at the top, and a lid 54 that is disposed so as to be movable up and down so as to open and close the upper opening portion of the processing chamber main body 53. An elevating cylinder 55 is connected to the lid 54, and the lid 54 is raised and lowered by driving the elevating cylinder 55. A closed space is formed in the heat treatment chamber 51 by closing the upper open portion of the treatment chamber body 53 with the lid 54. Further, the wafer W is transferred between the heat processing chamber 51 and the main wafer transfer mechanism 22 while the upper portion of the processing chamber main body 53 is open, and the wafer is transferred between the heat processing chamber 51 and the cooling processing chamber 52. W is delivered.
[0029]
A heating plate 56 for heat-treating the wafer W is disposed at a substantially central portion of the processing chamber main body 53. For example, a heater (not shown) is embedded in the hot plate 56, and the set temperature can be set to 200 to 470 ° C., for example. Further, a plurality of, for example, three holes 57 concentrically penetrate the hot plate 56 in the vertical direction, and support pins 58 for supporting the wafer W are inserted in these holes 57 so as to be movable up and down. . These support pins 58 are connected to and integrated with a communication member 59 on the back surface of the heat plate 56, and the communication member 59 is moved up and down by a lifting cylinder 60 disposed below the communication member 59. The support pin 58 protrudes or sunk from the surface of the hot plate 56 by the lifting / lowering operation of the lifting / lowering cylinder 60.
[0030]
A plurality of proximity pins 61 are arranged on the surface of the hot plate 56 so that the wafer W does not directly contact the hot plate 56 when the wafer W is heat-treated. This prevents static electricity from being charged on the wafer W during the heat treatment.
[0031]
Further, an inert gas such as nitrogen gas (N ₂ ) Is provided with a ring pipe 63 provided with a large number of gas ejection holes 62 for supplying the gas. The ring pipe 63 is connected to a nitrogen gas cylinder 65 through a pipe 64, and an open / close valve 66 is disposed on the pipe 64, and the open / close valve 66 is controlled to be opened and closed under the control of a control unit 67. It has become. In addition, not only an inert gas but also other gases such as oxygen gas may be supplied into the heat treatment chamber 51 as necessary. In that case, the ring pipe 63 can be shared, and these gases can be supplied via a switching valve for switching between nitrogen gas and oxygen gas. Thereby, the enlargement of the heat treatment chamber can be avoided.
[0032]
On the other hand, an exhaust port 68 for pressure reduction is provided in a substantially central portion of the lid 54, and the exhaust port 68 is connected to a vacuum pump 70 through a flexible hose 69, for example. Then, by operating the vacuum pump 70, the inside of the heat treatment chamber 51 can be set to an atmospheric pressure lower than the atmospheric pressure, for example, around 0.1 torr.
[0033]
A rectifying plate 71 is disposed inside the lid 54 so as to cover the exhaust port 68. The rectifying plate 71 has a diameter larger than that of the exhaust port 68, and further has a gap of, for example, about 5 mm with the inner wall of the lid 54. And by arranging such a rectifying plate 71, the inside of the heat treatment chamber 51 can be uniformly decompressed.
[0034]
Furthermore, a pressure sensor 72 for measuring the atmospheric pressure in the heat treatment chamber 51 is attached to the lid 54. The measurement result by the pressure sensor 72 is transmitted to the control unit 67, and the control unit 67 controls the operation of the vacuum pump 70 based on the measurement result, thereby maintaining the inside of the heat treatment chamber 51 in a constant reduced pressure state.
[0035]
In the cooling processing chamber 52, an opening 73 for transferring the wafer W to and from the heat processing chamber 51 is provided toward the heat processing chamber 51. The opening 73 can be opened and closed by a shutter member 74. The shutter member 74 is raised and lowered by the elevating cylinder 75 for the above opening and closing.
[0036]
In the cooling processing chamber 52, a cooling plate 76 for placing and cooling the wafer W is configured to be movable in the horizontal direction along the guide plate 77a by a moving mechanism 77b. As a result, the cooling plate 76 can enter the heat treatment chamber 51 through the opening 73, and receives the wafer W after being heated by the heat plate 56 in the heat treatment chamber 51 from the support pins 58. The wafer W is carried into the cooling processing chamber 52 and after the wafer W is cooled, the wafer W is returned to the support pins 58. The set temperature of the cooling plate 76 is, for example, 15 to 25 ° C., and the application temperature range of the wafer W to be cooled is, for example, 200 to 470 ° C.
[0037]
Further, an inert gas such as nitrogen gas is supplied into the cooling processing chamber 52 from above through a pipe 78, and an exhaust port 79 is provided in the lower portion of the cooling processing chamber 52. The exhaust port 79 is connected to the vacuum pump 81 via a flexible hose 80, for example. The operation of the vacuum pump 81 enables the inside of the cooling processing chamber 52 to be set to an atmospheric pressure lower than the atmospheric pressure, for example, around 0.1 torr. Note that the vacuum pump used in the heat treatment chamber 51 and the vacuum pump used in the cooling treatment chamber 52 may be configured by the same device.
[0038]
Next, the operation in the SOD system 1 configured as described above will be described. FIG. 7 shows a processing flow in the SOD system 1.
[0039]
First, in the cassette block 10, the unprocessed wafer W is transferred from the wafer cassette CR via the wafer transfer body 21 to a transfer table in a transfer / cooling plate (TCP) belonging to the third group G 3 on the processing block 11 side.
[0040]
The wafer W transferred to the transfer table on the transfer / cooling plate (TCP) is transferred to the cooling processing station (CPL) via the main wafer transfer mechanism 22. In the cooling processing station (CPL), the wafer W is cooled to a temperature suitable for processing in the SOD coating processing station (SCT) (step 701).
[0041]
The wafer W cooled in the cooling processing station (CPL) is transferred to the SOD coating processing station (SCT) via the main wafer transfer mechanism 22. In the SOD coating processing station (SCT), the wafer W is subjected to SOD coating processing (step 702).
[0042]
The wafer W that has been subjected to the SOD coating process at the SOD coating processing station (SCT) is transferred to the aging processing station (DAC) via the main wafer transfer mechanism 22. In the aging processing station (DAC), the wafer W is placed in the processing chamber with NH. ₃ + H ₂ O is introduced to age the wafer W, and the insulating film material film on the wafer W is gelled (step 703).
[0043]
The wafer W subjected to the aging process at the aging process station (DAC) is transferred to the solvent exchange process station (DSE) via the main wafer transfer mechanism 22. Then, in the solvent exchange processing station (DSE), the wafer W is supplied with an exchange chemical solution, and a process of replacing the solvent in the insulating film coated on the wafer with another solvent is performed (step 704).
[0044]
The wafer W subjected to the replacement process in the solvent exchange processing station (DSE) is transferred to the low temperature heating processing station (LHP) via the main wafer transfer mechanism 22. In the low temperature heat treatment station (LHP), the wafer W is subjected to low temperature heat treatment (step 705).
[0045]
The wafer W that has been subjected to the low temperature heat treatment at the low temperature heat treatment station (LHP) is transferred to the low oxygen high temperature heat treatment station (OHP) via the main wafer transfer mechanism 22. In the low oxygen high temperature heat treatment station (OHP), the wafer W is subjected to high temperature heat treatment in a low oxygen atmosphere (step 706).
[0046]
The wafer W that has been subjected to the high-temperature heat treatment in the low-oxygen high-temperature heat treatment station (OHP) is transferred to the low-oxygen cure / cooling treatment station (DCC) via the main wafer transfer mechanism 22. Then, in the low oxygen curing / cooling processing station (DCC), the wafer W is subjected to a high temperature heating process in a low oxygen atmosphere and a cooling process (step 707).
[0047]
Here, the process in step 707 will be described in more detail.
The wafer W is transferred from the main wafer transfer mechanism 22 onto the support pins 58 with the upper portion of the processing chamber body 53 being open and with the support pins 58 protruding from the surface of the hot plate 56. At that time, nitrogen gas is ejected from the gas ejection holes 62 of the ring tube 63 into the heat treatment chamber 51, and the pressure inside the heat treatment chamber 51 is set to a pressure higher than the pressure on the main wafer transfer mechanism 22 side. Thereby, particles are not caught in the heat treatment chamber 51 from the main wafer transfer mechanism 22 side.
[0048]
Next, the lid body 54 descends and the upper open portion of the processing chamber body 53 is closed with the lid body 54, thereby forming a sealed space in the heat treatment chamber 51. Then, the ejection of nitrogen gas from the gas ejection hole 62 of the ring pipe 63 into the heat treatment chamber 51 is stopped, and the vacuum pump 70 is operated so that the pressure inside the heat treatment chamber 51 is lower than the atmospheric pressure, for example, 0. Set to around 1 torr. After that, the support pins 58 are lowered and submerged from the surface of the hot plate 56, the wafer W is placed on the hot plate 56, and the heating process for the wafer W is started. As described above, since the wafer W is heat-treated in the heat treatment chamber 51 at a pressure lower than the atmospheric pressure, the wafer W can be quickly heat-treated, and the dielectric constant is high and uniform on the wafer W. It is possible to form a porous interlayer insulating film.
[0049]
Next, the ejection of nitrogen gas from the gas ejection hole 62 of the ring pipe 63 into the heat treatment chamber 51 is started, the inside of the heat treatment chamber 51 is purged with nitrogen gas, and the support pins 58 are raised to raise the heat plate 56. The lid 54 is further raised and the upper portion of the processing chamber main body 53 is opened. At that time, nitrogen gas is continuously ejected from the gas ejection holes 62 of the ring tube 63 into the heat treatment chamber 51. Thereby, particles are not caught in the heat treatment chamber 51 from the main wafer transfer mechanism 22 side.
[0050]
Next, the cooling plate 76 in the cooling processing chamber 52 enters the heating processing chamber 51 through the opening 73, receives the wafer W from the support pins 58, and carries it into the cooling processing chamber 52. At that time, nitrogen gas is supplied into the cooling processing chamber 52 through a pipe 78. Thereby, the oxidation of the wafer W is prevented. Further, for example, by excessively supplying the nitrogen gas to the cooling processing chamber 52 and setting the inside of the cooling processing chamber 52 to be more positive than the inside of the heating processing chamber 51, particles are not caught in the cooling processing chamber 52, On the contrary, the supply of nitrogen gas to the cooling processing chamber 51 is made too small so that the inside of the cooling processing chamber 52 is set to a negative pressure rather than the inside of the heating processing chamber 51, so that particles are not caught in the heating processing chamber 51. That is, it is essential to control the entrainment of particles by giving a negative pressure / positive pressure relationship between the heat treatment chamber 51 and the cooling treatment chamber 52.
[0051]
Next, the opening 73 is closed by the shutter member 74, the supply of nitrogen gas into the cooling processing chamber 52 is stopped, and the operation of the vacuum pump 81 further reduces the pressure inside the cooling processing chamber 52 to a pressure lower than the atmospheric pressure. Then, the wafer W is cooled. By performing the cooling process under reduced pressure in this manner, the wafer W can be quickly and uniformly cooled.
[0052]
Next, the operation of the vacuum pump 81 is stopped, the supply of nitrogen gas into the cooling processing chamber 52 is started, and the opening 73 is further opened. Then, the cooling plate 76 enters the heat treatment chamber 51 through the opening 73 and transfers the wafer W to the support pins 58. At that time, the nitrogen gas is continuously ejected from the gas ejection holes 62 of the ring pipe 63 into the heat treatment chamber 51. Thereby, particles are not caught in the heat treatment chamber 51 from the main wafer transfer mechanism 22 side.
[0053]
Then, the wafer W is delivered from the support pins 58 to the main wafer transfer mechanism 22.
The processing in step 707 is thus completed, and the wafer W processed in the low oxygen cure / cooling processing station (DCC) is transferred to the cooling plate in the delivery / cooling plate (TCP) via the main wafer transfer mechanism 22. Then, the wafer W is cooled on the cooling plate in the delivery / cooling plate (TCP) (step 708).
[0054]
The wafer W cooled by the cooling plate in the delivery / cooling plate (TCP) is transferred to the wafer cassette CR through the wafer transfer body 21 in the cassette block 10.
[0055]
The present invention is not limited to the above-described embodiment, and various modifications can be made. For example, the substrate to be processed is not limited to a semiconductor wafer, but may be another substrate such as an LCD substrate. The type of film is not limited to the interlayer insulating film.
[0056]
【The invention's effect】
As described above, according to the present invention, it is possible to quickly perform a process for obtaining desired characteristics while minimizing contamination by particles.
[Brief description of the drawings]
FIG. 1 is a plan view of an SOD processing system according to an embodiment of the present invention.
2 is a front view of the SOD system process shown in FIG. 1. FIG.
FIG. 3 is a rear view of the SOD processing system shown in FIG. 1;
4 is a perspective view of a main wafer transfer mechanism in the SOD processing system shown in FIG.
FIG. 5 is a plan view of a low oxygen curing / cooling processing station according to an embodiment of the present invention.
6 is a cross-sectional view of the low oxygen cure / cooling treatment station shown in FIG. 5;
7 is a processing flow diagram of the SOD processing system shown in FIG. 1. FIG.
[Explanation of symbols]
22 Main wafer transfer mechanism
51 Heat treatment chamber
52 Cooling chamber
62 Gas outlet
63 Ring tube
64 piping
65 Nitrogen gas cylinder
66 On-off valve
67 Control unit
68, 79 Exhaust port
69, 80 Flexible hose
70, 81 Vacuum pump
W wafer

Claims (4)

A transfer device that is arranged in an atmosphere set higher than atmospheric pressure and that transfers a substrate;
A heat treatment chamber in which the substrate is carried in and out by the transfer device and heat-treats the substrate;
A cooling treatment chamber disposed adjacent to the heat treatment chamber and passing the substrate between the transfer device and the heat treatment chamber;
When delivering a substrate between the transfer device and the heat treatment chamber, a predetermined gas is introduced into the heat treatment chamber to set the pressure inside the heat treatment chamber to a pressure higher than the pressure on the transfer device side, An apparatus for controlling a substrate, comprising: an atmospheric pressure control mechanism for lowering an atmospheric pressure in the heat treatment chamber lower than an atmospheric pressure when the substrate is heat-treated in the heat treatment chamber. The substrate processing apparatus according to claim 1, wherein the atmospheric pressure control mechanism sets an atmospheric pressure lower than an atmospheric pressure for the cooling processing chamber. The said atmospheric | air pressure control mechanism sets the atmospheric pressure of about 0.1 torr as the atmospheric | air pressure lower than the said atmospheric pressure to the said heat processing chamber and / or the said cooling processing chamber, The Claim 1 or Claim 2 characterized by the above-mentioned. Substrate processing equipment. 4. The substrate processing apparatus according to claim 1, wherein the gas introduced into the heat treatment chamber and / or the cooling treatment chamber contains at least an inert gas. 5.

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